buz 103s data book 1 05.99 sipmos ? power transistor product summary drain source voltage 55 v ds v drain-source on-state resistance ? 0.036 r ds(on) i d continuous drain current 31 a features ? n channel ? enhancement mode ? avalanche rated ? d v /d t rated ? 175 ?c operating temperature pin 1 pin 2 pin 3 g d s packaging type package ordering code buz103s tube p-to220-3-1 q67040-s4009-a2 buz103s e3045a tape and reel q67040-s4009-a6 p-to263-3-2 tube buz103s e3045 p-to263-3-2 q67040-s4009-a5 maximum ratings at t j = 25 ?c unless otherwise specified parameter symbol unit value continuous drain current t c = 25 ?c t c = 100?c 31 22 i d a pulsed drain current t c = 25 ?c i dpulse 124 avalanche energy, single pulse i d =31a, v dd =25v, r gs =25 ? mj e as 140 avalanche energy, periodic limited by t jmax 7.5 e ar reverse diode d v /d t i s =31a, v ds =40v, d i /d t = 200 a/ s, t jmax = 175 ?c d v /d t 6 kv/ s gate source voltage v gs 20 v power dissipation t c = 25 ?c p tot 75 w operating and storage temperature t j , t stg ?c -55... +175 55/175/56 iec climatic category; din iec 68-1
buz 103s data book 2 05.99 thermal characteristics parameter values symbol unit typ. max. min. characteristics r thjc - - 2 k/w thermal resistance, junction - case - thermal resistance, junction - ambient, leded r thja - 62 - - - - 62 40 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja electrical characteristics , at t j = 25 ? c, unless otherwise specified parameter symbol unit values min. max. typ. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 ? c - v (br)dss 55 - v gate threshold voltage, v gs = v ds i d = 50 a v gs(th) 4 3 2.1 zero gate voltage drain current v ds = 50 v, v gs = 0 v, t j = 25 ? c v ds = 50 v, v gs = 0 v, t j = 150 ? c - - i dss a 1 100 0.1 - gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 na 100 drain-source on-state resistance v gs = 10 v, i d = 22 a r ds(on) - 0.03 0.036 ? 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
buz 103s data book 3 05.99 electrical characteristics , at t j = 25 ? c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 2* i d * r ds(on)max , i d = 22 a g fs 10 15 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 720 900 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 230 300 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 125 160 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 31 a, r g = 13 ? t d(on) - 10 15 ns rise time v dd = 30 v, v gs = 10 v, i d = 31 a, r g = 13 ? t r - 25 40 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 31 a, r g = 13 ? t d(off) - 25 40 fall time v dd = 30 v, v gs = 10 v, i d = 31 a, r g = 13 ? t f - 20 30
buz 103s data book 4 05.99 electrical characteristics , at t j = 25 ? c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics gate to source charge v dd = 40 v, i d = 31 a 6 nc 4 q gs - - 13.6 q gd gate to drain charge v dd = 40 v, i d = 31 a 20.4 gate charge total v dd = 40 v, i d = 31 a, v gs = 0 to 10 v - 25 40 q g gate plateau voltage v dd = 40 v, i d = 31 a v (plateau) 5.9 - v - reverse diode inverse diode continuous forward current t c = 25 ? c i s - - 31 a inverse diode direct current,pulsed t c = 25 ? c i sm - - 124 inverse diode forward voltage v gs = 0 v, i f = 62 a v sd - 1.2 v 1.8 reverse recovery time v r = 30 v, i f = i s , d i f /d t = 100 a/s t rr - 55 ns 85 reverse recovery charge v r = 30 v, i f = l s , d i f /d t = 100 a/s q rr - c 0.1 0.15
buz 103s data book 5 05.99 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 ? c 190 t c 0 10 20 30 40 50 60 w 80 buz103s p tot drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 ? c 190 t c 0 4 8 12 16 20 24 28 a 34 buz103s i d transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -2 10 -1 10 0 10 1 10 2 10 k/w buz103s z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 ? c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a buz103s i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 13.0 s
buz 103s data book 6 05.99 typ. output characteristics i d = f ( v ds ) parameter: t p = 80 s 0.0 1.0 2.0 3.0 4.0 v 6.0 v ds 0 5 10 15 20 25 30 35 40 45 50 55 60 a 75 buz103s i d v gs [v] a a4.0 b b4.5 c c5.0 d d5.5 e e6.0 f f6.5 g g7.0 h h7.5 i i8.0 j j9.0 k k 10.0 l p tot = 75 w l 20.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 a 65 i d 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 ? 0.12 buz103s r ds(on) v gs [v] = c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 2 x i d x r ds(on) max 2 3 4 5 6 7 8 v 10 v gs 0 10 20 30 40 50 60 a 80 i d typ. forward transconductance g fs = f ( i d ) ; t j = 25 ? c parameter: g fs 0 4 8 12 16 20 24 28 32 36 a 42 i d 0 2 4 6 8 10 12 14 s 18 g fs
buz 103s data book 7 05.99 drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 22 a, v gs = 10 v -60 -20 20 60 100 140 ? c 200 t j 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 ? 0.13 buz103s r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter : v gs = v ds , i d = 50 a -60 -20 20 60 100 140 ? c 200 t j 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 v 5.0 v gs(th) min typ max typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ds 2 10 3 10 4 10 pf c ciss coss crss forward characteristics of reverse diode i f = f ( v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd 0 10 1 10 2 10 3 10 a buz103s i f t j = 25 ? c typ t j = 25 ? c (98%) t j = 175 ? c typ t j = 175 ? c (98%)
buz 103s data book 8 05.99 typ. gate charge v gs = f ( q gate ) parameter: i d puls = 31 a 0 4 8 12 16 20 24 28 32 nc 40 q gate 0 2 4 6 8 10 12 v 16 buz103s v gs ds max v 0,8 ds max v 0,2 avalanche energy e as = f ( t j ) parameter: i d = 31 a, v dd = 25 v r gs = 25 ? 20 40 60 80 100 120 140 ? c 180 t j 0 20 40 60 80 100 mj 140 e as drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 ? c 200 t j 50 52 54 56 58 60 62 64 v 66 buz103s v (br)dss
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