document number 6068 issue 1 2N5794 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. dual npn planar transistors in to77 package v cbo collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c continuous collector current p d total device dissipation t amb = 25c derate above 25c p d total device dissipation t c = 25c derate above 25c t stg storage temperature range 75v 40v 6v 600ma 500mw 600mw 2.9mw / c 3.4wm/ c 1.2w 2.0w 6.9mw / c 11.43mw / c ?65 to 200c mechanical data dimensions in mm (inches) to?77 package (mo - 002af) absolute maximum ratings (t amb = 25c unless otherwise stated) pin 1 ? collector 1 pin 2 ? base 1 pin 3 ? emitter 1 pin 4 ? emitter 2 pin 5 ? base 2 pin 6 ? collector 2 1.02 (0.040) max. 12.7 (0.500) min. 6.10 (0.240) 6.60 (0.260) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 0.74 (0.029) 1.14 (0.045) 1 6 4 3 2 45? 0.71 (0.028) 0.86 (0.034) 0.41 (0.016) 0.53 (0.021) 5 each side total device underside view
parameter test conditions 1 min. typ. max. unit v (br)cbo collector ? base breakdown voltage v (br)ceo* collector ? emitter breakdown voltage v (br)ebo emitter ?base breakdown voltage i cbo collector cut-off current i ebo emitter cut-off current i c1-c2 collector1-2 leakage current h fe* dc current gain v be(sat)* base ? emitter saturation voltage v ce(sat)* collector ? emitter saturation voltage f t transition frequency c cb collector - base capacitance c eb emitter- base capacitance t d delay time t r rise time t s storage time t f fall time i c = 10 ai e = 0 i c = 10ma i b = 0 i e = 10 ai c = 0 v cb = 50v i e = 0 v eb = 4.0v i c = 0 v c1-c2 = 50v v ce = 10v i c = 100 a v ce = 10v i c = 1ma v ce = 10v i c = 10ma v ce = 1.0v i c = 150ma v ce = 10v i c = 150ma v ce = 10v i c = 300ma i c =150ma i b = 15ma i c =300ma i b = 30ma i c =150ma i b = 15ma i c =300ma i b = 30ma i c = 20ma v ce = 20v f = 100mhz v cb = 10v i e =0 f =100khz v eb = 0.5v i c =0 f =100khz v cc = 30v v be(off) = 0.5v i c = 150ma i b1 =15ma v cc = 30v i c = 150ma i b1 = i b2 = 15ma document number 6068 issue 1 2N5794 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v na na na ? v v mhz pf pf ns ns ns ns 75 40 6 10 10 1.0 35 50 75 50 100 300 40 0.6 1.2 1.8 0.3 0.9 250 8.0 25 15 30 250 60 electrical characteristics (t amb = 25c unless otherwise stated) small signal characteristics * pulse width 300 s , duty cycle < 2% switching characteristics individual transistor characteristics
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