microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 1 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review the UPWLEDXX product incorporates microsemi?s unique, patented packaging concept to improve the homogeneous distribution of white light. the optomite package has low thermal resistance, <110c/w. the package gives a broad luminous emission, >170. the packagin g characteristics lend themselves to increased life, critical to many white applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com anode is the smaller of the two base pads . mount to circuit using 60/40 pb/sn or equivalent. maximum solder melt exposure temperature is 225c for 10 seconds. absolute maximum ratings at 25o c (unless otherwise specified) thermal characteristics (unless otherwise specified) thermal resistance symbol value units junction-to soldering point r js 110 c/w note: the ?x x ?trailer in the part number refers to the intensity bin followed by color rank. (see table). for operat ion of these leds in pulse mode applications, devices may be used in conjunction with micorsemi lx1992led drivers. parameters symbol value unit dc forward dc drive current i f 30 ma peak forward current (non-repetative) i fp 100 ma led operating junction temper ature tj -40 to +150 c reverse voltage v r 8 v power dissipation @ 30ma p d 125 mw operating temperature t opr -40 to +125 c storage temperature t s -45 to +150 c electrostatic discharge esd 1000 v esd classification class 2 solder reflow peak temperature (solder 10?) 225 c key features ? low thermal resistance ? rugged optomite 0603 package ? high brightness ? no uv bleed through ? broad angular luminous emission ? suited for high reliability applications applications ? mobile phone keypad ? panel, button, switch indicators. ? backlighting ? signage ? signals and marker lights u u p p w w l l e e d d x x x x
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 2 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review electrical parameters @ 25 c characteristic symbol test conditions min typ. max units radiant intensity i e dc drive current = 20ma 550 w/sr luminous intensity, (bin s ) luminous intensity, (bin t ) luminous intensity, (bin u ) i v dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma 180 220 260 200 250 320 240 300 400 275 350 450 220 260 mcd dominant wavelength dom dc drive current = 20ma 488 nm peak wavelength pk dc drive current = 20ma 460 nm color rank a chrom x chrom y color rank b chrom x chrom y color rank c chrom x chrom y color rank d chrom x chrom y other color ranks are available upon request. consult factory. dc drive current = 20ma 0.295 0.31 0.30 0.32 0.32 0.32 0.34 0.34 0.305 0.33 0.315 0.34 0.33 0.33 0.35 0.35 0.32 0.35 0.325 0.36 0.345 0.36 0.365 0.38 angle coverage to 50% points 1/2 dc drive current = 20ma to 50ma 140 150 deg. v typical e typical bin ( s ) bin ( t ) luminous flux, v radiant flux, e bin ( u ) v e dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma 500 625 1000 625 850 1300 800 1300 2000 mlm 1.75 2.75 3.75 2.25 3.5 4.5 2.75 4.0 5.0 mw forward voltage v f dc drive current = 20ma dc drive current = 30ma dc drive current = 50ma 3.6 3.9 4.5 3.9 4.2 4.9 v reverse leakage current i r reverse voltage = 5 v dc 10 a
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 3 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review 20 30 40 50 100 200 300 400 500 luminous intensity vs dc drive current dc drive current (ma) luminous intensity (mcd) luminous intensit y bin u bin t bin s 20 30 40 50 500 750 1000 1250 1500 1750 2000 luminous flux vs dc drive current dc drive current (ma) luminous flux (mlm) luminous flux bin u bin t bin s
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 4 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review 0 10 20 30 40 50 200 300 400 500 luminous flux vs distance to entry point distance (mils) luminous flux (mlm) luminous flux at id=20ma in mlm as a function of distance in mils between optomite top surface and entry point of light pipe. (scale as appropriate for bins t and u) 0.1 1 10 100 1 10 3 1 10 100 1 10 3 thermal impedance vs power-on time power-on time (ms) thermal impedance (c/watt) steady state thermal resistance junction-to-optomite base metal ~ 110c/watt steady state thermal time constant ~ 20ms
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 5 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 chromaticity diagram (cie 1931) x y diamonds indicate center points of color ranks a , b , c and d conversion of 1931 x y coordinates to 1960 u v coordinates: u = 4x/(-2x + 12y + 3) , v = 6y/(-2x + 12y +3) conversion of 1960 u v coordinates to 1931 x y coordinates: x = 3u/(2u ? 8v +4), y = 2v/(2u ?8v +4). consult factory for optional intensity and color ranking.
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 6 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review reliability status test conditions duration no. rejects resistance to solder heat t a = 230c +5c, -0c 5 to 6 seconds 0/15 vibration variable frequency 20 g (min); 20hz to 2,000hz each axis; x, y and z 4 min. each axis 0/15 storage bake t a = 100c 1,000 hrs 0/35 temp. cycle t a = +65c to ?55c 225 cycles 0/35 burn-in i d = 20 ma, ta = 25c 2,000 hrs 0/35 hi humid/temp t a = 85c, rh=85%, no bias 500 hrs 0/15 note: accept devices determined by reduc tion no greater than 70% of initial values spice model: .model UPWLEDXX d(is=1e-30 n=1. 923 rs=32.09 eg=3.6 cjo=63.87p + m=.1513 vj=2.02 fc =.5 isr=1.304m nr=3.4meg bv=1 2 ibv=369.5u + tt=432.8n xti=5) 3 3.5 4 4.5 5 10 100 forward voltage vs dc drive current forward voltage (volts) dc drive current (ma) junction temperatur e +125c 25c -40c
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 7 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review tape and reel (metric) . 3,000 units /reel
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 8 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review bottom view of optomite 0603 package mounting footprint, copper (note: silver plating will enhance luminous intensity)
microsemi 580 pleasant street, watertown, ma. 02472-2408, 617-926-0404, fax: 617-924-1235 page 9 copyright ? 2002 2003-06-03 www. microsemi . com UPWLEDXX high brightness white led p roduct p review calculation for safe operation above dc max. rating : the power dissipation must be held at a level to maintain the junction below the maximum specified operating temperature. duty cycle control may be used to establish th e safe operating condition using a train of pulses. led junction temperature may be calculated by use of the following: t j t case v f i dpk . t p r js . 1 t p z t p . z z tp . t case v f i dpk t p r js t p z t p z z tp t case is at a specified temperature. v f and i dpk values are read off graph of forward voltage vs drive current. t p and are set by the on-time and pulse period of the drive circuit. thermal impedances ( z ) and thermal resistance ( r ) values are read from thermal impedance graph. example: pulse repetition rate, prr, is 1khz. (period, =1ms) peak current, i dpk = 70ma. duty cycle = 25%. thus, t p = 250s case temperature, t case , is maintained at 40c maximum. determine junction temperature. step 1. find v f from graph. (v f = 4.9v @ i dpk = 70ma. peak power di ssipation is 343mw.) step 2. substitute the values for the z @ indicated times, as read from the thermal impedance graph: z 1.25 ms 25c/w z 1 ms 20c/w z 250 s 2c/w (extrapolated) calculated value of junction temper ature for this application is t j = 51c
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