isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 7/12/00 db91018aas/a3 approvals l ul recognised, file no. e91231 description the h11f_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. the detector is electrically isolated from the input and performs like an ideal isolated fet designed for distortion-free control of low level ac and dc analog signals.the h11f_ series are mounted in a standard 6pin dual in line plastic package. features l l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. as a remote variable resistor l 100 w to 3 300m w l 3 99.9% linearity l 15 pf shunt capacitance l 3 100g w i/o isolation resistance as an analog signal switch l extremely low offset voltage l 60v pk-pk signal capability l no charge injection or latchup l ton, toff 15 m s applications as a remote variable resistor l isolated variable attenuator l automatic gain control l active filter fine tuning / band switching H11F1, h11f2, h11f3 dimensions in mm 2.54 7.0 6.0 8.9 max. 0.5 min. 3.9 3.1 5.1 max. 15 max 0.25 0.48 8.3 max. option g 8.3 max surface mount option sm 10.16 10.2 9.5 0.26 1.2 0.6 1.4 0.9 1 3 4 6 2 5 applications (cont.) as an analog signal switch l isolated sample and hold circuit l multiplexed, optically isolated a/d conversion absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse voltage 6v power dissipation 100mw output transistor breakdown voltage H11F1, h11f2 30v h11f3 15v detector current (continuous) 100ma power dissipation 300mw power dissipation total power dissipation 350mw photon coupled bilateral analog fet isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
db91018-aas/a3 parameter min typ max units test condition input forward voltage (v f ) 1.1 1.75 v i f = 16ma reverse voltage (v r ) 5 v i r = 10 m a reverse current (i r ) 10 m a v r = 5v output breakdown voltage - v( br ) 46 (note 2) (either H11F1, h11f2 30 v i 46 = 10m a,i f = 0 polarity) h11f3 15 v i 46 = 10m a,i f = 0 off-state dark current - i 46 50 na v 46 = 15 v, i f = 0, t a = 25c 50 m a v 46 = 15 v, i f = 0, t a = 100c off-state resistance - r 46 300 mw v 46 = 15 v, i f = 0 capacitance - c 46 15 pf v 46 = 0 , i f = 0, f = 1 mhz coupled on-state resistance - r 46 (note 2) H11F1 200 w h11f2 330 w i f = 16ma, i 46 = 100m a h11f3 470 w on-state resistance - r 64 (note 2) H11F1 200 w h11f2 330 w i f = 16ma, i 64 = 100m a h11f3 470 w input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 10 11 w v io = 500v (note 1) input-output capacitance cf 2 pf v io = 0, f =1mhz turn-on time ton 25 m s i f = 16ma, v 46 = 5v, turn-off time toff 25 m s r l = 50 w resistance, non-linearity and asymmetry 0.1 % i f = 16ma, f = 1khz i 46 = 25m a rms 7/12/00 electrical characteristics ( t a = 25c unless otherwise noted ) note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory.
db91018-aas/a3 7/12/00 0 50 100 150 200 250 300 350 d.c. bias voltage v 46 (mv) change in resistance d r (on) (%) resistive non-linearity vs. d.c. bias -50 -25 0 25 50 75 100 ambient temperature t a ( c ) 1 normalized on-state resistance r (on) on-state resistance vs. ambient temperature 0.6 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 forward voltage v f (v) input current vs. input voltage 0.4 1 2 4 10 0 1 2 3 4 5 2 3 10 normalized dark current normalized off-state current vs. ambient temperature 100 0 25 50 75 100 ambient temperature t a ( c ) on-state resistance r (on) ( w) 20 4 2 0 10 100 1000 10k 100k region of linear resistance maximum rms signal voltage v 46 (mv) 40 100 1.0 20 40 100 forward current i f (ma) ambient temperature t a ( c ) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 forward current vs. ambient temperature forward current i f (ma) 70 80 maximum rms voltage maximum rms current extrapolated 100 40 20 10 4 2 0 maximum rms signal current i 46 ( m a) normalized to v 46 = 15v i f = 0 t a = 25 c 1000 10000 t a = 75c -25c 25c i 46 = 10 m a rms r (on) = 200w normalized to i f = 16ma i 46 = 25 m a t a = 25 c observed range median device 0.2 0.1 0.4 0.8
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