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  wireless rf product device data DL110/d rev. 14 2/2003 device data library wireless f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
i motorola wireless rf product device data contents at a glance wireless rf product device data data sheet device index (alphanumeric) ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . end of life product index xii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . after market support xiv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter one selector guide 1?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter two rf front end ics data sheets 2?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter three rf/if subsystem ics data sheets 3?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter four frequency synthesis data sheets 4?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter five rf transistors data sheets 5?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter six rf amplifier ics and modules data sheets 6?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter seven rf catv distribution amplifier modules data sheets 7?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter eight tape and reel specifications 8?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter nine packaging information 9?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter ten applications and product literature 10?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
ii motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
iii motorola wireless rf product device data wireless rf product device data table of contents page foreword v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . about this revision vi . . . . . . . . . . . . . . . . . . . . . . . . . . data classification vi . . . . . . . . . . . . . . . . . . . . . . . . . . . on?line access to wireless rf information vii . . . data sheet device index (alphanumeric) ix . . . . . . . end of life product index xii . . . . . . . . . . . . . . . . . . . . . after market support xiv . . . . . . . . . . . . . . . . . . . . . . . . chapter one selector guide 1?1 . . . . . . . . . . . . . . . . . . . . . rf front end ics 1?3 . . . . . . . . . . . . . . . . . . . . . . . . . rf/if subsystems 1?7 . . . . . . . . . . . . . . . . . . . . . . . . frequency synthesis 1?11 . . . . . . . . . . . . . . . . . . . . . rf transistors 1?13 . . . . . . . . . . . . . . . . . . . . . . . . . . . rf amplifier ics and modules 1?29 . . . . . . . . . . . . rf general purpose linear amplifier modules 1?33 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . catv distribution amplifier modules 1?35 . . . . . . . chapter two rf front end ics data sheets 2?1 . . . . . . . . . . . . . . . . . . . . . . . . . page chapter three rf/if subsystem ics data sheets 3?1 . . . . . . . . . . . . . . . . . . . . . . . . . chapter four frequency synthesis data sheets 4?1 . . . . . . . . . . . . . . . . . . . . . . . . . chapter five rf transistors data sheets 5?1 . . . . . chapter six rf amplifier ics and modules data sheets 6?1 . . . . . . . . . . . . . . . . . . . . . . . . . chapter seven rf catv distribution amplifier modules data sheets 7?1 . . . . . . . . . . . . . chapter eight tape and reel specifications 8?1 . . . chapter nine packaging information 9?1 . . . . . . . . . . . chapter ten applications and product literature 10?1 . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
iv motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
v motorola wireless rf product device data wireless rf product device data foreword this publication includes technical information for the several product families that comprise the motorola portfolio of wireless rf products. the product families include bipolar, rf bicmos, sige:c bicmos, ldmos, mosfet rf power, and gallium arsenide chip technologies in a variety of ceramic and plastic surface mount packages. discrete components, hybrid modules, and integrated circuits provide different levels of complexity in an effort to provide solutions for our customers? needs. all devices are in alphanumeric order in the data sheet device index of this book. just turn to the appropriate page for technical details of the known device. complete device specifications are provided in the form of data sheets which are categorized by product type into six chapters for easy reference. a selector guide by product family is provided at the beginning of the book to enable quick comparisons of performance characteristics and to aid you in identifying devices that meet your functional performance requirements of frequency, output power, gain, or other parameters. chapters on tape and reel options, packaging information, applications and product literature include additional information to aid you in the design process. applications assistance is only a phone call away ? call the nearest semiconductor sales office or 1-800-521-6274. please refer to our section on on?line access to w ireless semiconductor data so that you will always have easy access to the most current information available on motorola?s wireless rf product portfolio. refer to the end of life product index section for information on products that are not recommended for new design, end of life or available through after market support. the information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. ? motorola, inc. 2003 previous edition ? 2002 printed in u.s.a. ?all rights reserved? information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters which m ay be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. motorola does not convey any licens e under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
vi motorola wireless rf product device data about this revision this edition of the wireless rf product device data library encompasses a considerable number of changes that have occurred since our last printing. some devices have been removed from this book due to package changes or new technology replacements and many new devices have been added. application notes, engineering bulletins and article reprints of special interest to designers of rf and if equipment are available on the motorola semiconductor product sector web site or are available through the motorola literature distribution center. phone and fax numbers for ordering literature are listed on the back cover of this book and in our accessing data on?line section. see chapter ten for a complete listing of application literature. for information on products that are not recommended for new design, end of life or available through after market support, see the end of life product index section in this data book. for cross reference information on motorola replacement devices, please consult your local distributor or motorola sales office. data classification product preview this heading on a data sheet indicates that the device is in the formative stages or in design (under development). the disclaimer at the bottom of the first page reads: ??this document contains information on a product under development. motorola reserves the right to change or discontinue this product without notice.?? advance information this heading on a data sheet indicates that the device is in s ampling, pre?production, or first production stages. the disclaimer at the bottom of the first page reads: ??this document contains information on a new product. specifications and information herein are subject to change without notice.?? fully released a fully released data sheet contains neither a classification heading nor a disclaimer at the bottom of the first page. this document contains information on a product in full production. guaranteed limits will not be changed without written notice to your local motorola semiconductor sales office. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
vii motorola wireless rf product device data access motorola semiconductor technical information access data on?line! ? use motorola?s sps internet server motorola semiconductors has provided a world wide web server to deliver motorola sps technical data to the global internet community. available online are the product library, documentation library, tools library, industry focus sites, design resource sites, technical helpline, technical training and where to buy at the following url: http://www.motorola.com/semiconductors. see the rf and if design resource site at http://www.motorola.com/rf for specific wireless rf product support information for: ? data sheets ? applications notes ? selector guides ? packaging information ? application information ? models ? reference designs ? reference design simulations ? circuit board artwork ? roadmaps ? press releases ? events rf reference designs rf power reference designs provide: ? rf performance tuned for specific standard broadcast formats ? low cost component selection ? complete bom, layout, pcb and all design infor- mation available ? integral temperature compensated bias circuits included ? extensive rf characterizations motorola is pleased to offer application?specific reference designs. these application?specific reference designs show some of the many possible uses of our high power rf transistors. they provide the customer?s design engineers with a fast and accurate tool to both evaluate the performance envelope and fully characterize the devices under a variety of different operating conditions. low?cost component selection was chosen so that the end users could transition the design and its entire bill of materials into a high volume base station manufacturing process and still be cost competitive with other competing technologies. the circuit board is made of a recently developed ceramic loaded therm oset plastic woven glass material that offers very low material costs, low pcb fabrication cost, and yet still has an exceptionally low dissipation factor giving low rf loss. the dielectric constant of this material is high enough to allow for compact, distributed element matching structures, yet of a reasonable value to make it relatively insensitive to fabrication and etching variations. the circuit?s matching and decoupling capacitors utilize a low?cost silicon dioxide dielectric process rather than the traditional porcelain multi?layered assemblies, and they offer low esrs, very high q?s and tight capacitance value tolerances. the reference design data sheet contains a wealth of information that customers can use to better understand the range and capabilities of the motorola devices. i ncluded on the data sheet are such basics as the intended end use application (gsm, w?cdma, etc.), the typical performance level expected (2% evm, ?40 dbc acp, etc.) and some device features such as esd protection and good thermal stability. for more information, go to http://www.motorola.com/rf and select tools/hardware tools/reference designs and systems. rf ldmos models motorola continues to populate its ldmos model library with the ldmos met (motorola?s electro thermal) models and with the ldmos root models. all product models available in the rf ldmos model library (root and met) include package, bond wire and internal matching network effects. the motorola electro thermal (met) model for rf ldmos transistors is a nonlinear model that examines both electrical and thermal phenomena and can account for dynamic self?heating effects of device performance. it is specifically tailored to model high power rf ldmos transistors used in wireless base station applications. implemented in the agilent ? eesof ? eda advanced design system, aplac ? analog design tool, applied wave research microwave office ? , ansoft ? serenade design environment and eagleware ? genesys ? microwave and rf design suite, the met ldmos model is capable of performing small?signal, large?signal, harmonic?balance, noise and transient simulations. because of its ability to simulate self?heating effects, the met model is more f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
viii motorola wireless rf product device data accurate than existing models, enabling circuit designers to predict prototype performance more accurately and reduce design cycle time. the current release of the met ldmos model is available for these tools: ? agilent eesof ads ? (unix and pc) nonlinear cir- cuit simulator ? aplac analog design tool ? applied wave research microwave ? office ? ansoft serenade design environment ? eagleware genesys microwave and rf design suite the ldmos model library is available for all major computer platforms supported by these simulators. for more information and latest releases supported, go to http://www.motorola.com/rf/models. rf power reference design simulations ? provides a link between reference designs and met models ? example designs exist for a wide selection of motorola rf devices ? demonstrates how to design an amplifier using microwave stripline techniques in the agilent ? ads ? environment ? provides ?real?world? tutorial on how to use nonlinear models ? example designs for all major applications: gsm, cdma, w?cdma, tdma ? models provide examples of cw and 2?tone signal simulation ? simulation files are provided royalty?free to allow for reuse and adaptation ? the device selection and applications are being continually updated ? provides feedback path from customers to improve usability and accuracy of models reference design simulations in the past, motorola has provided application? specific reference designs that are targeted to provide a pre?designed circuit suitable for a specific application. additionally, motorola has also provided modeling tools, specifically met models, to facilitate design using computer aided engineering (cae) techniques. these two pieces of the puzzle are excellent design tools; however, they are never linked to each other, leaving the customer to figure out the best way to blend the two tools to their advantage. reference design simulations are designed to provide the link between these two tools. tools provided reference d esign simulations provide an example application of met models in a pre?designed application circuit. motorola has taken the time to characterize specific reference design circuits in ?software form.? the simulations have been chosen to represent a wide se lection of rf devices under many of the major communication standards, including gsm, cdma, w?cdma and tdma. learning tools reference d esign simulations provide examples of how to use nonlinear models of rf transistors. specifically, the user will also learn how to design an amplifier using microwave stripline matching techniques. to provide the most accurate modeling results, each simulation provides examples for cw, 2?tone and modulated signals, as applicable. reference design simulation availability the reference design simulation circuits are available as downloadable agilent ads projects from the motorola sps web site. these simulation files are provided royalty?free to allow for reuse and adaptation to other application requirements. go to http://www.motorola.com/rf and select tools/software tools/reference design simulations. literature centers printed literature can be obtained from the literature centers upon request. for those items that incur a cost, the u.s. literature center will accept master card and visa. usa/europe/locations not listed: motorola literature distribution p.o. box 5405 denver, colorado 80217 phone: 1?800?521?6274 or 1?480?768?2130 japan: motorola japan ltd. sps, technical information center 3?20?1, minami?azabu. minato?ku tokyo 106?8573 japan phone: 81?3?3440?3569 asia/pacific: motorola semiconductors h.k. ltd. silicon harbour centre 2 dai king street, tai po industrial estate tai po, n.t., hong kong phone: 852?26668334 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
data sheet device index ix motorola wireless rf product device data page device number number mbc13720 2?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mbc13900 5?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mbc13916 2?17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc13190 3?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc13751 2?27 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc13770 2?31 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc144 1 10 3?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc144 1 1 1 3?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145026 3?23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145027 3?23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145028 3?23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145151?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145152?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145157?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145158?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145170?2 4?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9236 6?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9236m 6?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9318 6?6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9838 6?9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl18336 6?12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl18926 6?13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl19338 6?14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl19926 6?15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl19936 6?16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl21336 6?19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mh p a19010 6?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mh p a21010 6?25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhvic910hr2 6?28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhvic915r2 6?35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1223la 7?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1224la 7?5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1244 7?7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1253la 7?9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1254l 7? 1 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1254la 7?12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1303la 7?14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1304la 7?16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1345 6?61 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1353la 7?18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1354la 7?20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw6342t 7?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7182b 7?24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7185c 7?26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page device number number mhw7185cl 7?28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7205c 7?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7205cl 7?32 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7222b 7?34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7242a 7?36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7272a 7?38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7292a 7?39 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8182b 7?40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8185 7?42 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8185l 7?44 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8202b 7?46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8205 7?48 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8205l 7?50 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8222b 7?52 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8242a 7?54 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8272a 7?55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9146 7?56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9182b 7?58 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9186 7?59 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9187 7?61 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9188 7?63 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9189 7?65 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9206 7?67 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9227 7?69 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9236 7?71 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9242a 7?73 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9247 7?75 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9267 7?77 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9276 7?79 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmg1001r2 7?81 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmg2001r2 7?86 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmm5047 2?36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmm5062 2?56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmm5063 2?75 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf281sr1 5?26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf281zr1 5?26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf282sr1 5?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf282zr1 5?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf284r1 5?37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf284lsr1 5?37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf372 5?46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf373ar1 5?57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf373alsr1 5?57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf374a 5?62 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
data sheet device index ? continued x motorola wireless rf product device data page device number number mrf15 1 1t1 5?72 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1513t1 5?82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1517t1 5?94 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1518t1 5?106 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1535t1 5? 1 18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1535ft1 5? 1 18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1550t1 5?128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1550ft1 5?128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1570t1 5?137 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1570ft1 5?137 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf6522?70 5?151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf6522?70r3 5?151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9002r2 5?158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030r1 5?165 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030lsr1 5?165 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030mr1 5?172 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030mbr1 5?172 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045r1 5?180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045lsr1 5?180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045mr1 5?186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045mbr1 5?186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060r1 5?194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060lsr1 5?194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060mr1 5?202 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060mbr1 5?202 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080r3 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080sr3 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080lsr3 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085r3 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085sr3 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085lsr3 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9100 5?224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9100r3 5?224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9100sr3 5?224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9120 5?233 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9120s 5?233 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9130l 5?241 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9130lr3 5?241 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9130lsr3 5?241 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9135l 5?248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9135lr3 5?248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9135lsr3 5?248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page device number number mrf9180 5?255 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9180s 5?255 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030ar3 5?263 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030asr3 5?263 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030br3 5?268 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030bsr3 5?268 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060a 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060ar3 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060alsr3 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060asr3 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060b 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060br3 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060blsr3 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060bsr3 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085a 5?285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085ar3 5?285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085alsr3 5?285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085b 5?290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085br3 5?290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085blsr3 5?290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090a 5?297 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090as 5?297 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090b 5?303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090bs 5?303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19030r3 5?309 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19030sr3 5?309 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19045r3 5?314 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19045sr3 5?314 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19060 5?321 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19060r3 5?321 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19060sr3 5?321 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085r3 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085sr3 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085lsr3 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19090 5?335 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19090s 5?335 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19090sr3 5?335 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19120 5?341 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19120s 5?341 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19125 5?348 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19125s 5?348 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19125sr3 5?348 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21010r1 5?356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
data sheet device index ? continued xi motorola wireless rf product device data page device number number mrf21010lsr1 5?356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21030r3 5?362 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21030sr3 5?362 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21045r3 5?367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21045sr3 5?367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21060 5?375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21060r3 5?375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21060sr3 5?375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085r3 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085sr3 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085lsr3 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21090l 5?389 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21090lr3 5?389 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21090lsr3 5?389 . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21090 5?396 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21090s 5?396 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf2 1 120 5?401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf2 1 125 5?408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf2 1 125s 5?408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page device number number mrf2 1 125sr3 5?408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 130 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 130r3 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 130s 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 130sr3 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 150 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 150r3 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 150s 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s2 1 150sr3 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5p2 1 180 5?429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf2 1 180 5?436 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf2 1 180s 5?436 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfg35003m6t1 5?444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfg35010 5?451 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfg35010mt1 5?459 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfic0970 2?92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfic1870 2?98 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mw4ic915mbr1 6?43 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mw4ic915gmbr1 6?43 . . . . . . . . . . . . . . . . . . . . . . . . . . . mwic930r1 6?53 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mwic930gr1 6?53 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
xii motorola wireless rf product device data end of life product index motorola sps follows the industry standard ?eia-724 product life cycle data model? to track the life cycle of its product. this model tracks the product?s life cycle from ?product newly introduced? to ?product phase out.? products can be phased for a variety of reasons: improved product performance, change in technology roadmap, process obsolescence, market decline, etc. when products are discontinued, a suggested possible replacement device or an alternative source of supply for discontinued devices are made available when possible. for a list of discontinued devices with possible alternative suppliers, please contact your local motorola sales office or auth o- rized distributor, or visit the following url: http://www.motorola.com/rf wireless infrastructure rf products product last order date last ship date possible replacement not recommended for new design mhw1224 ? ? mhw1224la mhw1304l ? ? mhw1304la end of life ca2810c past past mhw6342t ca2830c past past mhw6342t ca2832c past past none ca901 past past mhw8182b ca901a past past mhw8182b ca922 past past mhw8185 ca922a past past mhw8185 mhl8018 past past none mhl8115 past past none mhl8118 past past none mhw1810?001 9/1/03 3/1/04 mw4ic2020mbr1 mhw1910?001 9/1/03 3/1/04 mw4ic2020mbr1 mhw5182a past past mhw7182b mhw5222a past past none mhw6181 past past mhw7182b mhw6182 past past mhw7182b mhw6272 past past mhw7272a mhw7222a past past mhw7222b mhw7292 past past none mhw8185lr past past none mhw8185r past past none mhw8205r past past none mhw8292 past past none mhw910 past 6/30/03 mhvic910hr2 mhw916 past 6/30/03 none mrf1507t1 past past mrf1511t1 or mrf1517t1 mrf182 past past mrf9030r1 mrf182sr1 past past mrf9030lsr1 mrf183 past past mrf9045r1 mrf183s past past mrf9045mr1 or mrf9045lsr1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
xiii motorola wireless rf product device data end of life product index ? continued product last order date last ship date possible replacement end of life ? continued mrf183sr1 past past mrf9045mr1 or mrf9045lsr1 mrf183lsr1 7/31/04 1/31/05 mrf9045mr1 or mrf9045lsr1 mrf184 past past mrf9060r1 mrf184sr1 past past mrf9060lsr1 or mrf9060mr1 mrf184r1 7/31/04 1/31/05 mrf9060 mrf184lsr1 7/31/04 1/31/05 mrf9060lsr1 or mrf9060mr1 mrf185 7/31/04 1/31/05 mrf9080 mrf186 7/31/04 1/31/05 mrf9120 mrf187 7/31/04 1/31/05 mrf9085 mrf187s 7/31/04 1/31/05 mrf9085sr3 mrf1946 past past mrf1535t1 mrf1946a past past mrf1535t1 mrf20030r past past mrf19030r3 mrf20060r past past mrf19060 mrf20060rs past past mrf19060 mrf21120s past past mrf21120 mrf247 past past mrf1550t1 mrf2628 past past none mrf373 7/31/04 1/31/05 mrf373ar1 mrf373s past past mrf373alsr1 mrf373lsr1 7/31/04 1/31/05 mrf373alsr1 mrf374 7/31/04 1/31/05 mrf374a mrf492 past past mrf1550t1 mrf5015 past past none mrf6401 past past none mrf6404 past past mrf9030r1 mrf646 past past mrf1550t1 mrf648 past past mrf1550t1 mrf650 past past mrf1550t1 mrf652 past past mrf1518t1 mrf6522?060 7/31/04 1/31/05 mrf9060r1 mrf6522?10r1 7/31/04 1/31/05 mrf282sr1 mrf6522?5r1 7/31/04 1/31/05 mrf282zr1 or mrf9002r2 mrf652s past past mrf1518t1 mrf847 past past mrf9045r1 mrf857s past past mrf9002r2 mrf897 past past mrf9045lsr1 mrf897r past past mrf9045r1 mrf898 past past mrf9060r1 mrf899 past past mrf9180 tpv8100b past past none for information on wireless rf and if handset products, see after market support at the following url: http://www.motorola.com/rf f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
xiv motorola wireless rf product device data after market support for a list of discontinued devices with possible alternative suppliers, please contact your local motorola sales office or auth o- rized distributor, or visit the following url: http://www.motorola.com/rf for wireless infrastructure products transferred to another manufacturer, see the list of wireless infrastructure rf products below. after market support on these parts is available through m/a?com. for additional information, contact m/a?com cus- tomer service at (310) 320?6160 x 354 (voice), clarkj@tycoelectronics.com (email) or (310) 618?9191 (fax). 2n6439 mrf137 mrf171a mrf317 mrf10005 mrf140 mrf173 mrf321 mrf1000mb mrf141 mrf173cq mrf323 mrf10031 mrf141g mrf174 mrf327 mrf1004mb mrf148a mrf175gu mrf392 mrf10120 mrf150 mrf175gv mrf393 mrf10150 mrf151 mrf175lu mrf421 mrf10350 mrf151g mrf176gu mrf422 mrf10502 mrf154 mrf176gv mrf426 mrf1090ma mrf157 mrf177 mrf428 mrf1090mb mrf158 mrf275g mrf429 mrf1150ma mrf160 mrf275l mrf448 mrf1150mb mrf16006 mrf3104 mrf454 mrf134 mrf16030 mrf313 mrf455 mrf136 mrf166c mrf314 mrf587 mrf136y mrf166w mrf316 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?1 selector guide motorola wireless rf product device data w ireless rf product selector guide chapter one offering a broad portfolio of rf products, motorola serves both the wireless infrastructure and subscriber markets. motorola rf soluti ons is the leader in rf technology?today and tomorrow?and is the answer for developers who are creating innovative new products to meet their customers? need for wireless connections. motorola pioneered rf technology and continues to drive future innovations, deliver- ing significantly higher measurable performance over our competitors?in most cases, 15 to 30 percent. motorola rf solutions supports developers through unequaled integra- tion, high terminal impedance, the most comprehensive rf toolkit in the industry, and access to our global support team. motorola is committed to the development of new products and expansion of our product offerings to meet the increasing global demands of ism band and personal communications systems, including cellular phone, broadband data, tv broadcast, land mobile and catv systems. how to use this selector guide the rf monolithic integrated circuits and the rf/if integrated circuits products in this guide are divided into three major functional categories: rf front end ics, rf/if subsystem ics and frequency synthesis. each of these categories is further subdivided based on circuit functional- ity. this structure differentiates highly integrated subsystem ics from fundamental circuit building blocks and discrete transistors. the power ldmos transistors, power gaas transistors, power amplifier ics and modules and catv distribution amplifier m odules are first divided into major categories by frequency band. second, within each category, parts are listed by power level. third, within a frequency band, transistors are further grouped by operating voltage and, finally, output power. applications assistance applications assistance is only a phone call away ? call the nearest semiconductor sales office or 1-800-521-6274. access data on?line! use the motorola sps internet to access motorola semiconductor product data at http://www.motorola.com/ semiconductors or http://www.motorola.com/rf. the sps internet provides you with instant access to product summary pages, data sheets, selector guide information, application information, design tools, package outlines, on?line technical support and much more. table of contents page rf front end ics 1?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rfics 1?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . upconverters/exciters 1?4 . . . . . . . . . . . . . . . . . . . . . . . downconverters 1?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . power amplifiers 1?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf building blocks 1?5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . amplifiers 1?5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf/if subsystems 1?7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tranceivers 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . miscellaneous functions 1?8 . . . . . . . . . . . . . . . . . . . . . . . . adcs/dacs 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . encoders/decoders 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . frequency synthesis 1?11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . single pll synthesizers 1?12 . . . . . . . . . . . . . . . . . . . . . . . packages 1?12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf transistors 1?13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf high power ldmos transistors 1?14 . . . . . . . . . . . . . mobile ? to 520 mhz 1?14 . . . . . . . . . . . . . . . . . . . . . . . tv broadcast ? to 1.0 ghz 1?14 . . . . . . . . . . . . . . . . . . cellular ? to 1.0 ghz 1?15 . . . . . . . . . . . . . . . . . . . . . . . pcs and 3g ? to 2.1 ghz 1?16 . . . . . . . . . . . . . . . . . . rf power gaas transistors 1?19 . . . . . . . . . . . . . . . . . . . . 3.5 ghz ? linear transistors 1?19 . . . . . . . . . . . . . . . . rf low power transistors 1?20 . . . . . . . . . . . . . . . . . . . . . rf high power amplifier line?ups 1?21 . . . . . . . . . . . . . . packages 1?27 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf amplifier ics and modules 1?29 . . . . . . . . . . . . . . . . . . . . base stations 1?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?32 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf general purpose linear amplifier modules 1?33 . . . . . . rf general purpose linear amplifier modules 1?34 . . . . packages 1?34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . catv distribution amplifier modules 1?35 . . . . . . . . . . . . . . . forward amplifier modules 1?36 . . . . . . . . . . . . . . . . . . . . . reverse amplifier modules 1?39 . . . . . . . . . . . . . . . . . . . . . packages 1?41 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?2 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?3 selector guide motorola wireless rf product device data rf front end ics motorola?s rf f ront end integrated circuit devices provide an integrated solution for the personal communications market. these devices are available in plastic sot?343, sot?363, tssop?16, tssop?20ep, qfn?20, qfn?24, or qfn?32 packages. evaluation boards evaluation boards are available for rf front end integrated circuits. for a complete list of currently available boards and ones in development for newly introduced product, please contact your local motorola distributor or sales office. table of contents page rf front end ics 1?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rfics 1?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . upconverters/exciters 1?4 . . . . . . . . . . . . . . . . . . . . . . . downconverters 1?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . power amplifiers 1?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf building blocks 1?5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . amplifiers 1?5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?4 motorola wireless rf product device data rf front end ics rfics upconverters/exciters product rf freq. range mhz supply volt. range vdc supply current ma (typ) standby current ma (typ) conv. gain db (typ) output ip3 dbm (typ) packaging system applicability mc13751fc (18b) 800 to 900 1900 to 1950 2.7 to 2.9 53 0.025 21.5 23 24 1307/ qfn?24 tdma, pcs downconverters product input freq. mhz lo freq. vdc if freq. (mhz) gain (db) nf (db) iip3 (dbm) supply current packaging system applicability mc13770 (42,46a) (lna) 2100 to 2170 n/a n/a 15 ?5.0 1.5 5.0 0 20 3.0 ma 10 a 1345/ qfn?12 w?cdma, pcs, pdc mc13770 (43,46a) (mixer) 2110 to 2170 2300 to 2360 2490 to 2550 190 380 10.0 8.0 ?3.0 5.0 ma 1345/ qfn?12 w?cdma, pcs, pdc power amplifiers product freq. range mhz supply volt. range vdc saturated p out dbm (typ) pae % (typ) gain p out /p in db (typ) packaging system applicability mrfic0970 (18b) 800 to 1000 2.8 to 5.5 35.2 53 30.2 1308/ qfn?20 gsm, ism mrfic1870 (18b) 1700 to 2000 2.8 to 5.5 33 45 28 1308/ qfn?20 dcs1800, pcs mmm5047 (46a) 824 to 849 3.0 to 4.5 28 30 32 27.9 37.1 44.8 31.3 30.8 31.1 1440/ 9x12 mm module amps, tdma, gsm850 1850 to 1910 30 32 32.3 39.9 31.6 31.5 tdma, pcs1900 mmm5062 (18m) 800 to 1000 1700 to 2000 2.7 to 5.5 33.4 34.0 54 43 36.2 31.0 1383/ 7x7 mm module gsm850, gsm900, dcs1800, pcs1900 mmm5063  800 to 2000 2.7 to 5.5 34.0 35.2 33.8 44 43 53 ? ? ? 1383/ 7x7 mm module gsm900, dcs1800, pcs1900 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (42) in lna section, specifications are represented in high gain mode first and bypass mode second. (43) in mixer section, lo frequency ranges are specified for 190 mhz and 380 mhz if. (46) to be introduced: a) 1q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?5 selector guide motorola wireless rf product device data rf building blocks amplifiers product rf freq. range mhz supply volt. range vdc supply current ma (typ) standby current a (typ) small signal gain db (typ) output ip3 dbm (typ) nf db (typ) packaging system applicability mbc13720 (18c) 400 to 2500 2.5 to 3.0 9.0 <20 14.5 @ 1900 mhz 24.5 @ 1900 mhz 1.38 @ 1900 mhz 419b/ sot?363 ism900, 2400, pcs, cdma mbc13916 (18c) 100 to 2500 2.7 to 5.0 4.7 ? 19 @ 900 mhz 16.5 @ 900 mhz 0.9 @ 900 mhz sot?343r general purpose cascode amp for vcos, buffers, & lnas (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?6 motorola wireless rf product device data rf front end integrated circuit packages case 1440 (9x12 module) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?7 selector guide motorola wireless rf product device data rf/if subsystems table of contents page tranceivers 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . miscellaneous functions 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . . adcs/dacs 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . encoders/decoders 1?8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?8 motorola wireless rf product device data rf/if subsystems tranceivers max input baseband system product v cc i cc input freq. sensitivity plls baseband bw system applicability packaging mc13190fc (18b) 2.5?3.0 v 12 ma rx 64 ma tx 78 ma sb 2.5 ghz ?68 dbm @ 15 dbm s/n 1 5 mhz 2.4 ghz ism 1311/ qfn?32 miscellaneous functions adcs/dacs number of product function i/o format resolution number of analog channels other features suffix/ packaging mc144110 (25b) dac serial 6 bits 6 emitter?follower outputs dw/751d mc144111 (25b) 4 dw/751g encoders/decoders product function number of address lines maximum number of address codes number of data bits operation suffix/ packaging mc145026 (25b) encoder depends on decoder depends on decoder depends on decoder simplex p/648, d/751b mc145027 (25b) decoder 5 243 4 simplex p/648, mc145028 (25b) 9 19,683 0 simplex , dw/751g (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (25) device available only from lansdale semiconductor after : a) 3q03; b) 3q04. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?9 selector guide motorola wireless rf product device data rf/if subsystems packages f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?10 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?11 selector guide motorola wireless rf product device data frequency synthesis table of contents page single pll synthesizers 1?12 . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?12 motorola wireless rf product device data frequency synthesis single pll synthesizers product maximum frequency (mhz) supply voltage (v) nominal supply current (ma) features packaging mc145151?2 (25b) 20 @ 5.0 v 3.0 to 9.0 7.5 @ 5 v parallel interface dw/751f mc145152?2 (25b) 20 @ 5.0 v 3.0 to 9.0 7.5 @ 5 v parallel interface, uses external dual?modulus prescaler dw/751f mc145157?2 (25a) 20 @ 5.0 v 3.0 to 9.0 7.5 @ 5 v serial interface dw/751g mc145158?2 (25a) 20 @ 5.0 v 3.0 to 9.0 7.5 @ 5 v serial interface, uses external dual?modulus prescaler dw/751g mc145170?2 100 @ 3.0 v 185 @ 4.5 v 2.7 to 5.5 2 @ 3 v 6 @ 5 v serial interface, auxiliary reference divider, evaluation kit ? mc145170evk p/648, d/751b, dt/948c (25) device available only from lansdale semiconductor after : a) 3q03; b) 3q04. frequency synthesis packages f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?13 selector guide motorola wireless rf product device data motorola rf transistors motorola continues to be the industry leader in rf transistor technology. our current portfolio ranges from high gain and low noise devices at microwave frequencies to high power devices for fixed rf and microwave applications. technical innovation combined with world?class manufacturing capability allows motorola to offer world class product, service and support to its customers. from our ldmos and gaas portfolio, the user can choose from a variety of packages. they include plastic and ceramic that are microstrip circuit compatible or surface mountable. many are designed for automated assembly equipment. table of contents page rf high power ldmos transistors 1?14 . . . . . . . . . . . . . . . . mobile ? to 520 mhz 1?14 . . . . . . . . . . . . . . . . . . . . . . . . . . tv broadcast ? to 1.0 ghz 1?14 . . . . . . . . . . . . . . . . . . . . cellular ? to 1.0 ghz 1?15 . . . . . . . . . . . . . . . . . . . . . . . . . . pcs and 3g ? to 2.1 ghz 1?16 . . . . . . . . . . . . . . . . . . . . . rf power gaas transistors 1?19 . . . . . . . . . . . . . . . . . . . . . . 3.5 ghz linear transistors 1?19 . . . . . . . . . . . . . . . . . . . . . rf low power transistors 1?20 . . . . . . . . . . . . . . . . . . . . . . . . rf high power amplifier line?ups 1?21 . . . . . . . . . . . . . . . . . packages 1?27 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?14 motorola wireless rf product device data motorola rf transistors rf high power ldmos transistors motorola ldmos technology is ideally suited for rf power amplifier applications. several families of products have been targeted for specific markets including vhf and uhf portable/land mobile, 900 mhz linear cellular, gsm, tdma and cdma, digital television, gsm edge, pcs, umts, and w?cdma. with the unique ldmos characteristics, these parts offer superior thermal performance. this is due to the simplified package design, which of fers excellent class ab intermodulation performance under medium peak?to?average ratios providing a superior device choice for advanced digital modulations formats or high gain applications. table 1. mobile ? to 520 mhz designed for broadband vhf and uhf commercial and industrial applications. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 12.5/7.5 volt mobile, portable and base station operation. gain frequency p out test v dd (typ)/freq. eff. (typ) jc product band (37) watts signal volts db/mhz % c/w pkg/style vhf & uhf, land mobile radio, class ab mrf1513t1 (18f) u 400?520 3 cw 1?tone 7.5/12.5 11/520 55 4.0 466/1 mrf1511t1 (18f) u 135?175 8 cw 1?tone 7.5 11.5/175 55 2.0 466/1 mrf1517t1 (18f) u 430?520 8 cw 1?tone 7.5 11/520 55 2.0 466/1 mrf1518t1 (18f) u 400?520 8 cw 1?tone 12.5 11/520 55 2.0 466/1 mrf1535t1 (18j) u 400?520 35 cw 1?tone 12.5 10(min)/520 50(min) 0.90 1264/1 mrf1535ft1 (18j) u 400?520 35 cw 1?tone 12.5 10(min)/520 50(min) 0.90 1264a/1 mrf1550t1 (18j) u 135?175 50 cw 1?tone 12.5 10(min)/175 50(min) 0.75 1264/1 mrf1550ft1 (18j) u 135?175 50 cw 1?tone 12.5 10(min)/175 50(min) 0.75 1264a/1 mrf1570t1 (18j)  u 400?470 70 cw 1?tone 12.5 10(min)/470 50(min) 0.75 1366/1 mrf1570ft1 (18j)  u 400?470 70 cw 1?tone 12.5 10(min)/470 50(min) 0.75 1366a/1 table 2. tv broadcast ? to 1.0 ghz gain frequency p out test v dd (typ)/freq. eff. (typ) jc product band (37) watts signal volts db/mhz % c/w pkg/style 470 ? 1000 mhz, class ab mrf373ar1 (18a) u 470?860 75 cw 1?tone 32 18.2/860 60 0.89 360b/1 mrf373alsr1 (18a) u 470?860 75 cw 1?tone 32 18.2/860 60 0.63 360c/1 mrf374a u 470?860 130 pep 2?tone 32 17.3/860 41.2 0.58 375f/1 mrf372 i 470?860 180 pep 2?tone 32 17/860 36 0.5 375g/1 mrf377 (46b) i/o 470?860 50 avg ofdm 32 17/860 24 0.37 375g/1 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (37) u = unmatched; i = input; i/o = input/output. (46) to be introduced: a) 1q03; b) 2q03; c) 3q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?15 selector guide motorola wireless rf product device data rf high power ldmos transistors (continued) table 3. cellular ? to 1.0 ghz p out gain frequency (typ) test v dd (typ)/freq. eff. (typ) jc pkg/ product band (37) watts signal volts db/mhz % c/w style 800 ? 1.0 ghz, class ab mrf9002r2 (18e) u 960 (3x) 2 pep (41) 2?tone 26 18/960 50 12 978/? mrf9030mbr1 (18a)  u 945 30 pep 2?tone 26 20/945 41 1.08 1337/1 mrf9030mr1 (18a) u 945 30 pep 2?tone 26 20/945 41 1.08 1265/1 mrf9030r1 (18a) u 945 30 pep 2?tone 26 19/945 41.5 1.9 360b/1 mrf9030lsr1 (18a)  u 945 30 pep 2?tone 26 19/945 41.5 1.5 360c/1 mrf9045mbr1 (18a) u 945 45 pep 2?tone 28 19/945 41 0.85 1337/1 mrf9045mr1 (18a) u 945 45 pep 2?tone 28 19/945 41 0.85 1265/1 mrf9045r1 (18a) u 945 45 pep 2?tone 28 18.8/945 42 1.4 360b/1 mrf9045lsr1 (18a) u 945 45 pep 2?tone 28 18.8/945 42 1.0 360c/1 mrf9060mbr1 (18a) u 945 60 pep 2?tone 26 18/945 40 0.56 1337/1 mrf9060mr1 (18a)  u 945 60 pep 2?tone 26 18/945 40 0.56 1265/1 mrf9060r1 (18a) u 945 60 pep 2?tone 26 17/945 40 1.1 360b/1 mrf9060lsr1 (18a) u 945 60 pep 2?tone 26 17/945 40 0.8 360c/1 mrf6522?70 i 921?960 70 cw 1?tone 26 16/921,960 58 1.1 465d/1 mrf6522?70r3 (18i) i 921?960 70 cw 1?tone 26 16/921,960 58 1.1 465d/1 mrf9080 i 921?960 70 cw 1?tone 26 18.5/921,960 52 0.7 465/1 mrf9080r3 (18i) i 921?960 70 cw 1?tone 26 18.5/921,960 52 0.7 465/1 mrf9080sr3 (18i) i 921?960 70 cw 1?tone 26 18.5/921,960 52 0.7 465a/1 mrf9080lsr3 (18i)  i 921?960 70 cw 1?tone 26 18.5/921,960 52 0.7 465a/1 mrf9085 i 880 90 pep 2?tone 26 17.9/880 40 0.7 465/1 mrf9085r3 (18i) i 880 90 pep 2?tone 26 17.9/880 40 0.7 465/1 mrf9085sr3 (18i) i 880 90 pep 2?tone 26 17.9/880 40 0.7 465a/1 mrf9085lsr3 (18i) i 880 90 pep 2?tone 26 17.9/880 40 0.7 465a/1 mrf9100  i/o 921?960 100 cw 1?tone 26 17/960 51 1.0 465/1 mrf9100r3 (18i)  i/o 921?960 100 cw 1?tone 26 17/960 51 1.0 465/1 mrf9100sr3 (18i)  i/o 921?960 100 cw 1?tone 26 17/960 51 1.0 465a/1 mrf9120 i 880 120 pep 2?tone 26 16.5/880 39 0.45 375b/1 mrf9120s i 880 120 pep 2?tone 26 16.5/880 39 0.45 375h/1 mrf9130l  i 921?960 130 cw 1?tone 28 16.5/921,960 48 0.6 465/1 mrf9130lr3 (18i)  i 921?960 130 cw 1?tone 28 16.5/921,960 48 0.6 465/1 mrf9130lsr3 (18i)  i 921?960 130 cw 1?tone 28 16.5/921,960 48 0.6 465a/1 mrf9135l  i 880 25 avg n?cdma 26 17.8/880 25 0.6 465/1 mrf9135lr3 (18i)  i 880 25 avg n?cdma 26 17.8/880 25 0.6 465/1 mrf9135lsr3 (18i)  i 880 25 avg n?cdma 26 17.8/880 25 0.6 465a/1 mrf9180 i 880 170 pep 2?tone 26 17.5/880 39 0.45 375d/1 mrf9180s i 880 170 pep 2?tone 26 17.5/880 39 0.45 375e/1 mrf9200l (46b) i/o 880 45 avg n?cdma 26 17/880 26 0.37 465b/1 mrf9200ls (46b) i/o 880 45 avg n?cdma 26 17/880 26 0.37 465c/1 mrf9200lsr3 (18i,46b) i/o 880 45 avg n?cdma 26 17/880 26 0.37 465c/1 mrf9210 (46b) i/o 880 40 avg n?cdma 26 16.5/880 25.5 0.4 375g/1 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (37) u = unmatched; i = input; i/o = input/output. (41) three individual transistors in a single package. (46) to be introduced: a) 1q03; b) 2q03; c) 3q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?16 motorola wireless rf product device data rf high power ldmos transistors (continued) table 4. pcs and 3g ? to 2.1 ghz p out gain frequency (typ) test v dd (typ)/freq. eff. (typ) jc pkg/ product band (37) watts signal volts db/mhz % c/w style 1805 ? 1990 mhz, class ab (gsm1800, gsm1900, gsm edge and pcs tdma) mrf18030ar3 (18i) i/o 1805?1880 30 cw 1?tone 26 14/1805,1880 50 2.1 465e/1 mrf18030asr3 (18i) i/o 1805?1880 30 cw 1?tone 26 14/1805,1880 50 2.1 465f/1 mrf18030br3 (18i) i/o 1930?1990 30 cw 1?tone 26 14/1930,1990 50 2.1 465e/1 mrf18030bsr3 (18i) i/o 1930?1990 30 cw 1?tone 26 14/1930,1990 50 2.1 465f/1 mrf18060a i/o 1805?1880 60 cw 1?tone 26 13/1805,1880 45 0.97 465/1 mrf18060ar3 (18i) i/o 1805?1880 60 cw 1?tone 26 13/1805,1880 45 0.97 465/1 mrf18060asr3 (18i) i/o 1805?1880 60 cw 1?tone 26 13/1805,1880 45 0.97 465a/1 mrf18060alsr3 (18i) i/o 1805?1880 60 cw 1?tone 26 13/1805,1880 45 0.97 465a/1 mrf18060b i/o 1930?1990 60 cw 1?tone 26 13/1930,1990 45 0.97 465/1 mrf18060br3 (18i) i/o 1930?1990 60 cw 1?tone 26 13/1930,1990 45 0.97 465/1 mrf18060bsr3 (18i) i/o 1930?1990 60 cw 1?tone 26 13/1930,1990 45 0.97 465a/1 mrf18060blsr3 (18i) i/o 1930?1990 60 cw 1?tone 26 13/1930,1990 45 0.97 465a/1 mrf18085a  i/o 1805?1880 85 cw 1?tone 26 15/1805,1880 52 0.64 465/1 mrf18085ar3 (18i)  i/o 1805?1880 85 cw 1?tone 26 15/1805,1880 52 0.64 465/1 mrf18085alsr3 (18i)  i/o 1805?1880 85 cw 1?tone 26 15/1805,1880 52 0.64 465a/1 mrf18085b  i/o 1930?1990 85 cw 1?tone 26 12.5/1930,1990 50 0.64 465/1 mrf18085br3 (18i)  i/o 1930?1990 85 cw 1?tone 26 12.5/1930,1990 50 0.64 465/1 mrf18085blsr3 (18i)  i/o 1930?1990 85 cw 1?tone 26 12.5/1930,1990 50 0.64 465a/1 mrf18090a i/o 1805?1880 90 cw 1?tone 26 13.5/1805,1880 52 0.7 465b/1 mrf18090as i/o 1805?1880 90 cw 1?tone 26 13.5/1805,1880 52 0.7 465c/1 mrf18090b i/o 1930?1990 90 cw 1?tone 26 13.5/1930,1990 45 0.7 465b/1 mrf18090bs i/o 1930?1990 90 cw 1?tone 26 13.5/1930,1990 45 0.7 465c/1 1.9 ghz, class ab (2?ch n?cdma and w?cdma) mrf19030r3 (18i) i/o 1930?1990 30 pep 2?tone 26 13/1990 36 2.1 465e/1 mrf19030sr3 (18i) i/o 1930?1990 30 pep 2?tone 26 13/1990 36 2.1 465f/1 mrf19045r3 (18i) i/o 1930?1990 9.5 avg n?cdma 26 14.5/1990 23.5 1.65 465e/1 mrf19045sr3 (18i) i/o 1930?1990 9.5 avg n?cdma 26 14.5/1990 23.5 1.65 465f/1 mrf5s19060m ( 46b) i/o 1930?1990 60 pep 2?tone 26 12.5/1990 36 ? ? mrf19060 i/o 1930?1990 60 pep 2?tone 26 12.5/1990 36 0.97 465/1 mrf19060r3 (18i) i/o 1930?1990 60 pep 2?tone 26 12.5/1990 36 0.97 465/1 mrf19060sr3 (18i) i/o 1930?1990 60 pep 2?tone 26 12.5/1990 36 0.97 465a/1 mrf19085 i/o 1930?1990 18 avg n?cdma 26 13/1990 23 0.64 465/1 mrf19085r3 (18i) i/o 1930?1990 18 avg n?cdma 26 13/1990 23 0.64 465/1 mrf19085sr3 (18i) i/o 1930?1990 18 avg n?cdma 26 13/1990 23 0.64 465a/1 mrf19085lsr3 (18i) i/o 1930?1990 18 avg n?cdma 26 13/1990 23 0.64 465a/1 mrf5s19090l (46b) i/o 1930?1990 18 avg n?cdma 28 14.5/1990 26 ? 465/1 mrf5s19090lr3 (18i,46b) i/o 1930?1990 18 avg n?cdma 28 14.5/1990 26 ? 465/1 mrf5s19090lsr3 (18i,46b) i/o 1930?1990 18 avg n?cdma 28 14.5/1990 26 ? 465a/1 mrf19090 i/o 1930?1990 90 pep 2?tone 26 11.5/1990 35 0.65 465b/1 mrf19090s i/o 1930?1990 90 pep 2?tone 26 11.5/1990 35 0.65 465c/1 mrf19090sr3 (18i) i/o 1930?1990 90 pep 2?tone 26 11.5/1990 35 0.65 465c/1 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (37) u = unmatched; i = input; i/o = input/output. (46) to be introduced: a) 1q03; b) 2q03; c) 3q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?17 selector guide motorola wireless rf product device data rf high power ldmos transistors (continued) table 4. pcs and 3g ? to 2.1 ghz (continued) p out gain frequency (typ) test v dd (typ)/freq. eff. (typ) jc pkg/ product band (37) watts signal volts db/mhz % c/w style 1.9 ghz, class ab (2?ch n?cdma and w?cdma) (continued) mrf5s19100 (46b) i/o 1930?1990 22 avg n?cdma 28 14/1990 26 ? 465/1 mrf5s19100r3 (18i,46b) i/o 1930?1990 22 avg n?cdma 28 14/1990 26 ? 465/1 mrf5s19100sr3 (18i,46b) i/o 1930?1990 22 avg n?cdma 28 14/1990 26 ? 465a/1 mrf19120 (3) i/o 1930?1990 120 pep 2?tone 26 11.7/1990 34 0.45 375d/1 mrf19120s (3) i/o 1930?1990 120 pep 2?tone 26 11.7/1990 34 0.45 375e/1 mrf19125 i/o 1930?1990 24 avg n?cdma 26 13.5/1990 22 0.53 465b/1 mrf19125s i/o 1930?1990 24 avg n?cdma 26 13.5/1990 22 0.53 465c/1 mrf19125sr3 (18i) i/o 1930?1990 24 avg n?cdma 26 13.5/1990 22 0.53 465c/1 mrf5s19130 (46b) i/o 1930?1990 26 avg n?cdma 28 13.5/1990 26 ? 465b/1 mrf5s19130s (46b) i/o 1930?1990 26 avg n?cdma 28 13.5/1990 26 ? 465c/1 mrf5s19150 (46b) i/o 1930?1990 34 avg n?cdma 28 13.5/1990 26 ? 465b/1 mrf5s19150s (46b) i/o 1930?1990 34 avg n?cdma 28 13.5/1990 26 ? 465c/1 mrf5p20180 (46b) i/o 1930?1990 38 avg w?cdma 28 14/1990 25.5 ? 375d/1 2.0 ghz, class a, ab mrf281sr1 (18a) u 1930?2000 4 pep 2?tone 26 12.5/2000 33 5.74 458b/1 mrf281zr1 (18a) u 1930?2000 4 pep 2?tone 26 12.5/2000 33 5.74 458c/1 mrf282sr1 (18a) u 1930?2000 10 pep 2?tone 26 11.5/2000 28(min) 4.2 458b/1 mrf282zr1 (18a) u 1930?2000 10 pep 2?tone 26 11.5/2000 28(min) 4.2 458c/1 mrf284r1 (18a) u 1930?2000 30 pep 2?tone 26 10.5/2000 35 2.0 360b/1 mrf284lsr1 (18a) u 1930?2000 30 pep 2?tone 26 10.5/2000 35 2.0 360c/1 2.1 ghz, class ab (2?ch w?cdma, umts) mrf21010r1 (18a) u 2110?2170 10 pep 2?tone 28 13.5/2170 35 5.5 360b/1 mrf21010lsr1 (18a) u 2110?2170 10 pep 2?tone 28 13.5/2170 35 5.5 360c/1 mrf21030r3 (18i) i/o 2110?2170 30 pep 2?tone 28 13/2170 33 2.1 465e/1 mrf21030sr3 (18i) i/o 2110?2170 30 pep 2?tone 28 13/2170 33 2.1 465f/1 mrf21045r3 (18i) i/o 2110?2170 10 avg w?cdma 28 15/2170 23.5 1.65 465e/1 mrf21045sr3 (18i) i/o 2110?2170 10 avg w?cdma 28 15/2170 23.5 1.65 465f/1 mrf21060 i/o 2110?2170 60 pep 2?tone 28 12.5/2170 34 1.02 465/1 mrf21060r3 (18i) i/o 2110?2170 60 pep 2?tone 28 12.5/2170 34 1.02 465/1 mrf21060sr3 (18i) i/o 2110?2170 60 pep 2?tone 28 12.5/2170 34 1.02 465a/1 mrf21085 i/o 2110?2170 19 avg w?cdma 28 13.6/2170 23 0.78 465/1 mrf21085r3 (18i) i/o 2110?2170 19 avg w?cdma 28 13.6/2170 23 0.78 465a/1 mrf21085lsr3 (18i) i/o 2110?2170 19 avg w?cdma 28 13.6/2170 23 0.78 465a/1 mrf21085sr3 (18i) i/o 2110?2170 19 avg w?cdma 28 13.6/2170 23 0.78 465a/1 mrf21090 i/o 2110?2170 90 pep 2?tone 28 11.7/2170 33 0.65 465b/1 mrf21090s i/o 2110?2170 90 pep 2?tone 28 11.7/2170 33 0.65 465c/1 mrf5s21090l  i/o 2110?2170 19 avg w?cdma 28 14.5/2170 26 0.78 465/1 mrf5s21090lr3 (18i)  i/o 2110?2170 19 avg w?cdma 28 14.5/2170 26 0.78 465a/1 mrf5s21090lsr3 (18i)  i/o 2110?2170 19 avg w?cdma 28 14.5/2170 26 0.78 465/1 mrf5s21100l (46b) i/o 2110?2170 23 avg w?cdma 28 13.5/2170 26 0.7 465/1 mrf5s21100lr3 (18i,46b) i/o 2110?2170 23 avg w?cdma 28 13.5/2170 26 0.7 465/1 mrf5s21100lsr3 (18i,46b) i/o 2110?2170 23 avg w?cdma 28 13.5/2170 26 0.7 465a/1 mrf21120 (3) i/o 2110?2170 120 pep 2?tone 28 11.4/2170 34.5 0.45 375d/1 mrf21125 i/o 2110?2170 20 avg w?cdma 28 13/2170 18 0.53 465b/1 mrf21125s i/o 2110?2170 20 avg w?cdma 28 13/2170 18 0.53 465c/1 mrf21125sr3 (18i) i/o 2110?2170 20 avg w?cdma 28 13/2170 18 0.53 465c/1 (3) internal impedance matched push-pull transistors (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (37) u = unmatched; i = input; i/o = input/output. (46) to be introduced: a) 1q03; b) 2q03; c) 3q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?18 motorola wireless rf product device data rf high power ldmos transistors (continued) table 4. pcs and 3g ? to 2.1 ghz (continued) p out gain frequency (typ) test v dd (typ)/freq. eff. (typ) jc pkg/ product band (37) watts signal volts db/mhz % c/w style 2.1 ghz, class ab (2?ch w?cdma, umts) (continued) mrf5s21130  i/o 2110?2170 28 avg w?cdma 28 13.5/2170 26 0.54 465b/1 mrf5s21130r3 (18i)  i/o 2110?2170 28 avg w?cdma 28 13.5/2170 26 0.54 465b/1 mrf5s21130s  i/o 2110?2170 28 avg w?cdma 28 13.5/2170 26 0.54 465c/1 mrf5s21130sr3 (18i)  i/o 2110?2170 28 avg w?cdma 28 13.5/2170 26 0.54 465c/1 mrf5s21150  i/o 2110?2170 33 avg w?cdma 28 12.5/2170 25 0.47 465b/1 mrf5s21150r3 (18i)  i/o 2110?2170 33 avg w?cdma 28 12.5/2170 25 0.47 465b/1 mrf5s21150s  i/o 2110?2170 33 avg w?cdma 28 12.5/2170 25 0.47 465c/1 mrf5s21150sr3 (18i)  i/o 2110?2170 33 avg w?cdma 28 12.5/2170 25 0.47 465c/1 mrf5p21180  i/o 2110?2170 38 avg w?cdma 28 14/2170 25.5 0.40 375d/1 mrf21180 (3) i/o 2110?2170 38 avg w?cdma 28 12.1/2170 22 0.46 375d/1 mrf21180s (3) i/o 2110?2170 38 avg w?cdma 28 12.1/2170 22 0.46 375e/1 mrf5p21240 (46c) i/o 2110?2170 52 avg w?cdma 28 13/2170 24.5 ? 375d/1 (3) internal impedance matched push-pull transistors (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (37) u = unmatched; i = input; i/o = input/output. (46) to be introduced: a) 1q03; b) 2q03; c) 3q03 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?19 selector guide motorola wireless rf product device data rf power gaas transistors motorola power gaas transistors are made using an ingaas phemt epitaxial structure for superior rf efficiency and linearity. the fets listed in this section are designed for operation in base station infrastructure rf power amplifiers and are grouped according to frequency range and type of application. parts are listed first by order of operating voltage, then by increasing output power. table 1. 3.5 ghz ? linear transistors p out gain frequency (typ) test v dd (typ)/freq. eff. (typ) jc pkg/ product band (37) watts signal volts db/ghz % c/w style 3.5 ghz, class ab (wll, bwa, w?cdma) mrfg35002mt1 (18f,46b) u 3.5 g 0.2 avg w?cdma (44) 12 10/3.5 30 ? 466/1 mrfg35003mt1 (18f,46b) u 3.5 g 0.3 avg w?cdma (44) 12 12.5/3.5 26 ? 466/1 mrfg35003m6t1 (18f)  u 3.5 g 0.45 avg w?cdma (44) 6 9/3.5 24 ? 466/1 mrfg35005mt1 (18f,46b) u 3.5 g 0.45 avg w?cdma (44) 12 11.5/3.5 25 ? 466/1 mrfg35010 u 3.5 g 1 avg w?cdma (44) 12 10/3.5 30 4.8 (15) 360d/1 mrfg35010mt1 (18f)  u 3.5 g 0.9 avg w?cdma (44) 12 10/3.5 28 ? 466/1 mrfg35030 (9) i/o 3.5 g 4 avg w?cdma (44) 12 10/3.5 26 ? ? (9) in development. (15) class a = 5.3 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (37) u = unmatched; i = input; i/o = input/output. (44) peak?to?average power ratio = 10 db (46) to be introduced: a) 1q03; b) 2q03; c) 3q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?20 motorola wireless rf product device data rf low power transistors gain ? bandwidth nfmin @ f gain @ f maximum ratings product f typ ghz i c ma typ db ghz typ db ghz v(br) ceo volts i c ma packaging mbc13900 (18c) 15 20 1.0 1.0 17 1.0 7.0 20 318m/ sot 343 1.3 2.0 14 2.0 sot?343 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?21 selector guide motorola wireless rf product device data rf high power amplifier line?ups mobile ? uhf 400 ? 520 mhz mobile ? vhf 135 ? 175 mhz mobile ? uhf 400 ? 470 mhz f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?22 motorola wireless rf product device data rf high power amplifier line?ups (continued) broadcast 470 ? 860 mhz   ? ? ? broadcast 470 ? 860 mhz   ? ? ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?23 selector guide motorola wireless rf product device data rf high power amplifier line?ups (continued)   ? ? ? broadcast 470 ? 860 mhz   ? ? ? broadcast 470 ? 860 mhz f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?24 motorola wireless rf product device data rf high power amplifier line?ups (continued) gsm and edge ? 900 mhz ceramic plastic hybrid gsm and edge ? 1800 mhz ceramic hybrid plastic f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?25 selector guide motorola wireless rf product device data rf high power amplifier line?ups (continued) gsm and edge ? 1900 mhz ceramic hybrid plastic n?cdma ? 1900 mhz ceramic hybrid plastic f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?26 motorola wireless rf product device data rf high power amplifier line?ups (continued) w?cdma ? 2200 mhz ceramic hybrid plastic wll ? 3500 mhz ceramic plastic f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?27 selector guide motorola wireless rf product device data rf transistor packages  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?28 motorola wireless rf product device data rf transistor packages (continued)          f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?29 selector guide motorola wireless rf product device data motorola rf amplifier ics and modules motorola?s rf portfolio includes many hybrid designs optimized to perform in narrowband base station transmitter applications and ic designs optimized for wideband applications. motorola modules feature two or more active transistors (ldmos or gaas die technology) and their associated 50 ohm matching networks. circuit substrate and metallization have been selected for optimum performance and reliability. for pa designers, ic driver devices offer the benefits of multiple gain stages in one package with most of the decoupling and matching circuitry incorporated into a single low?cost plastic device. table of contents page rf amplifier ics and modules 1?29 . . . . . . . . . . . . . . . . . . . . base stations 1?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . packages 1?32 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?30 motorola wireless rf product device data motorola rf amplifier ics and modules complete amplifiers with 50 ohm input impedances are available for all popular base station transmitter systems, including gsm and cdma, covering frequencies from 800 mhz up to 2.2 ghz. base stations designed for applications such as macrocell drivers and microcell output stage, these class ab amplifiers are ideal for base station systems with power requirements up to 30 watts. table 1. base station ic drivers supply frequency p1db gain (typ) voltage system die product mhz watts db volts class application technology pkg/style mhvic910hr2 (18e) 921?960 10 39 26 ab gsm900 ldmos 978/? mhvic915r2 (18e,46a) 746?960 15 30 26 ab n?cdma, gsm/gsm edge ldmos 978/? mw4ic915mbr1 (18a)  860?960 15 30 26 ab n?cdma, gsm/gsm edge ldmos 1329/1 mw4ic915gmbr1 (18a)  860?960 15 30 26 ab n?cdma, gsm/gsm edge ldmos 1329a/1 mwic930r1 (18a)  746?960 30 30 27 ab n?cdma, gsm/gsm edge ldmos 1329/1 mwic930gr1 (18a)  746?960 30 30 27 ab n?cdma, gsm/gsm edge ldmos 1329a/1 mw4ic2020mbr1 (18a,46a) 1805?1990 20 29 26 ab n?cdma, gsm/gsm edge ldmos 1329/1 mw4ic2020gmbr1 (18a,46a) 1805?1990 20 29 26 ab n?cdma, gsm/gsm edge ldmos 1329a/1 mhvic2115r2 (18e)  2110?2170 15 30 26 ab w?cdma ldmos 978/? mw4ic2230mbr1 (18a,46b) 2110?2170 30 32 28 ab w?cdma ldmos 1329/1 mw4ic2230gmbr1 (18a,46b) 2110?2170 30 32 28 ab w?cdma ldmos 1329a/1 table 2. base station module drivers designed for applications such as macrocell drivers and microcell output stage, these class ab amplifiers are ideal for base station systems with power requirements up to 10 watts. supply frequency p1db gain (min) voltage system die product mhz watts db volts class application technology pkg/style mhpa18010 (46a) 1805?1880 10 24.5 28 ab n?cdma ldmos 301ap/3 mhpa19010  1930?1990 10 24.5 28 ab pcs1900 ldmos 301ap/3 mhpa21010  2110?2170 10 23.7 28 ab w?cdma ldmos 301ap/3 (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (46) to be introduced: a) 1q03; b) 2q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?31 selector guide motorola wireless rf product device data rf amplifier ics and modules: base stations (continued) table 3. base station module pre?drivers these 50 ohm amplifiers are recommended for modern mult i?tone cdma, tdma and umts base station pre?driver applications. their high third?order intercept point, tight phase and gain control, and excellent group delay characteristics m ake these devices ideal for use in high?power feedforward loops. ultra?linear (for cdma, w?cdma, tdma, analog) ? class a (ldmos die) ? lateral mosfets gain 3rd order frequency v dd i dd gain flatness p 1db intercept nf band (nom.) (nom.) (nom.) (typ) (typ) (typ) (typ) pkg/ product mhz volts ma db db dbm dbm db style mhl9838 800?925 28 770 31 .1 39 50 3.7 301ap/1 mhl9236 800?960 26 550 30.5 .1 34 47 3.5 301ap/1 mhl9236m 800?960 26 550 30.5 .1 34 47 3.5 301ap/2 mhl9318 860?900 28 500 17.5 .1 35.5 49 3.0 301as/1 mhl18336 1800?1900 26 500 30 .2 36 46 4.2 301ap/1 mhl18926 1805?1880 26 1100 28.6 .3 40 50 4.2 301ay/1 mhl19338 1900?2000 28 500 30 .1 36 46 4.2 301ap/1 mhl19926 1930?1990 26 1000 29.4 .3 40 50 4.2 301ay/1 mhl19936 1900?2000 26 1400 29 .2 41 49.5 4.2 301ay/1 mhl21336 2110?2170 26 500 31 .15 35 45 4.5 301ap/1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?32 motorola wireless rf product device data rf amplifier ics and modules packages    f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?33 selector guide motorola wireless rf product device data motorola rf general purpose linear amplifier modules motorola general purpose linear amplifier modules are designed and specified for 50 ohm applications where linearity and dynamic range are essential. table of contents page rf general purpose linear amplifier modules 1?34 . . . . . . packages 1?34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?34 motorola wireless rf product device data motorola rf general purpose linear amplifier modules this device has been optimized for 50 ohm applications. it was designed for multi?purpose applications where linearity and dynamic range are of primary concern. general purpose linear amplifier modules ? class a ? silicon bipolar frequency v cc i cc gain gain p 1db 3rd order nf f requency v cc i cc g a i n g a i n p 1db 3 r d o r d er nf band (nom) (nom) (nom) @ 100 mhz flatness (typ) (typ) @ 200 mhz intercept (typ) (typ) @ 200 mhz product mhz volts ma db db dbm dbm db pkg/style mhw1345  10?200 24 310 34.5 1.0 28 44 3.8 1302/1 note: possible replacement for ca2830c.  new product rf general purpose linear amplifier module package f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?35 selector guide motorola wireless rf product device data motorola catv distribution amplifier modules motorola hybrids are manufactured using the latest catv generation technology which has set new standards for catv system performance and reliability. these hybrids have been optimized to provide premium performance in all catv systems up to 152 channels. additions to our catv product family include 40?870 mhz high output gallium arsenide (gaas) power doublers as well as low distortion, low power consumption reverse amplifiers. table of contents page catv distribution amplifier modules 1?35 . . . . . . . . . . . . . . . forward amplifier modules 1?3 6 . . . . . . . . . . . . . . . . . . . . . reverse amplifier modules 1?39 . . . . . . . . . . . . . . . . . . . . . packages 1?41 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?36 motorola wireless rf product device data motorola catv distribution amplifier modules motorola hybrids are manufactured using the latest generation technology which has set new standards for catv system performance and reliability. these hybrids have been optimized to provide premium performance in all catv systems up to 152 channels. forward amplifier modules 40?1000 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar hybrid maximum distortion specifications noise h y b r id gain output 2nd composite cross noise figure gain ( nom ) channel o u t pu t level 2 n d order c ompos it e tri p le beat c ross modulation dc fig u re @ 1000 (nom) @ channel loading level order test triple beat modulation dc current @ 1000 mhz @ 50 mhz loading capacity test dbc dbc current mhz product db py dbmv/ch dbc 152 ch 152 ch ma typ db max pkg/ style preamplifiers mhw9182b 18.5 152 +38 ?63 (40) ?61 ?61 210 7.5 714y/1 mhw9242a 23.2 152 +38 ?61 (40) ?58 ?59 318 8.0 1302/1 40?870 mhz high output hybrids, v cc = 24 vdc, class a ? gaas hybrid maximum distortion specifications noise h y b r id gain output 2nd composite cross noise figure gain ( nom ) channel o u t pu t level 2 n d order c ompos it e tri p le beat c ross modulation dc fig u re @ 870 (nom) @ channel loading level order test triple beat modulation dc current @ 870 mhz @ 870 mhz loading capacity test dbc dbc current mhz product db py dbmv/ch dbc 132 ch 132 ch ma typ db max pkg/ style preamplifiers mhw9146  14.3 132 +44 ?60 (36) ?60 ?55 245 5.5 1302/1 mhw9186  18.5 132 +44 ?60 (36) ?58 ?52 250 5.0 1302/1 mhw9206  20.2 132 +44 ?59 (36) ?57 ?51 245 4.5 1302/1 mhw9236 (46a) 23.6 132 +44 ?60 (36) ?60 ?53 255 6.0 1302/1 mhw9276  27.9 132 +44 ?60 (36) ?60 ?53 250 6.5 1302/1 power doublers mhw9187 20 132 +48 ?62 (34) ?56 ?55 425 4.5 1302/1 mhw9188  20.3 132 +48 ?62 (34) ?56 ?55 425 4.5 1302/1 mhw9189 (35)  20.3 132 +48 ?62 (34) ?56 ?55 425 4.5 1302/2 mhw9227  22.1 132 +48 ?62 (34) ?56 ?55 425 4.5 1302/1 mhw9247  24.9 132 +48 ?62 (34) ?56 ?54 440 7.0 1302/1 mhw9267  27.6 132 +48 ?60 (34) ?56 ?54 440 7.0 1302/1 (34) composite 2nd order; v out = +48 dbmv/ch (35) mirror image of mhw9188 (36) composite 2nd order; v out = +44 dbmv/ch (40) composite 2nd order; v out = +38 dbmv/ch (46) to be introduced: a) 1q03; b) 2q03  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?37 selector guide motorola wireless rf product device data catv distribution: forward amplifier modules (continued) 40?870 mhz high output mmic, v cc = 24 vdc, class a ? gaas hybrid maximum distortion specifications noise h y b r id gain output 2nd composite cross noise figure gain ( nom ) channel o u t pu t level 2 n d order c ompos it e tri p le beat c ross modulation dc fig u re @ 870 (nom) @ channel loading level order test triple beat modulation dc current @ 870 mhz @ 870 mhz loading capacity test dbc dbc current mhz product db py dbmv/ch dbc 132 ch 132 ch ma typ db max pkg/ style preamplifiers mmg1001r2 (18e)  18.5 132 +44 ?58 ?56 ?52 250 5.0 978?03 power doublers mmg2001r2 (18e)  19.5 132 +48 ?60 ?54 ?53 425 4.5 978?03 40?870 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar hybrid maximum distortion specifications noise h y b r id gain output 2nd composite cross n o i se fi g ure gain (nom) channel o u t pu t level 2 n d order c ompos it e tri p le beat c ross modulation dc figure @ 870 (nom) @ channel loading level order test triple beat modulation dc current @ 870 mhz @ 870 mhz loading capacity test dbc dbc current a db pk / product db py dbmv/ch dbc 128 ch 128 ch ma typ db max pkg/ style preamplifiers mhw8202b  20.9 128 +38 ?66 (40) ?63 ?62 220 7.0 1302/1 40?860 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar maximum distortion specifications hybrid gi cross noise fi y gain (nom) channel output level 2nd order composite triple beat modulation fm=55mhz dc figure @ 860 (n om ) @ ch anne l loadin g level order test triple beat fm = 55 mhz dc current @ 860 mhz @ 50 mhz loading capacity test dbc dbc current a mhz db pk / product db py dbmv/ch dbc 128 ch 128 ch ma typ db max pkg/ style preamplifiers mhw8182b 18.5 128 +38 ?64 (40) ?66 ?65 220 7.5 714y/1 mhw8222b 21.9 128 +38 ?60 (40) ?64 ?63 220 7.0 1302/1 mhw8242a 24 128 +38 ?62 (40) ?64 ?62 318 7.5 1302/1 mhw8272a 27.2 128 +38 ?64 (40) ?64 ?62 310 7.0 1302/1 power doublers mhw8185l (21) 18.5 128 +40 ?62 (39) ?63 ?64 365 8.5* 714y/1 mhw8185 18.8 128 +40 ?62 (39) ?64 ?64 400 8.0 714y/1 mhw8205l (22) 19.5 128 +40 ?60 (39) ?63 ?64 365 8.5* 714y/1 mhw8205 19.8 128 +40 ?60 (39) ?63 ?64 400 8.0 714y/1 *@ 870 mhz (18) tape and reel packaging option available by adding suffix: a) r1 = 500 units; b) r2 = 2,500 units; c) t1 = 3,000 units; d) t3 = 10,000 units; e) r2 = 1,500 units; f) t1 = 1,000 units; g) r2 = 4,000 units; h) r1 = 1,000 units; i) r3 = 250 units; j) t1 = 500 unit s; k) r2 = 450 units; l) t1 = 5,000 units; m) r2 = 2,000 units. (21) low dc current version of mhw8185; typical i cc @ vdc = 24 v is 365 ma. (22) low dc current version of mhw8205; typical i cc @ vdc = 24 v is 365 ma. (39) composite 2nd order; v out = +40 dbmv/ch (40) composite 2nd order; v out = +38 dbmv/ch  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?38 motorola wireless rf product device data catv distribution: forward amplifier modules (continued) 40?750 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar maximum distortion specifications hybrid gi cross noise fi y gain (nom) channel output level 2nd order composite triple beat modulation fm=55mhz dc figure @ 750 (n om ) @ ch anne l loadin g level order test triple beat fm = 55 mhz dc current @ 750 mhz @ 50 mhz loading capacity test dbc dbc current a mhz db pk / product db py dbmv/ch dbc 110 ch 110 ch ma typ db max pkg/ style preamplifiers mhw7182b 18.5 110 +40 ?63 (39) ?66 ?64 220 6.5 714y/1 mhw7222b 21.9 110 +40 ?60 (39) ?61 ?60 220 6.5 1302/1 mhw7242a 24 110 +40 ?62 (39) ?63 ?61 318 7.0 1302/1 mhw7272a 27.2 110 +40 ?64 (39) ?64 ?60 310 6.5 1302/1 mhw7292a  29 110 +40 ?60 (39) ?60 ?60 310 6.5* 1302/1 *@ 770 mhz 40?750 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar (continued) maximum distortion specifications hybrid gi cross noise fi y gain (nom) channel output level 2nd order composite triple beat modulation fm=55mhz dc figure @ 750 (n om ) @ ch anne l loadin g level order t est triple beat fm = 55 mhz dc current @ 750 mhz @ 50 mhz loading capacity test dbc dbc current a mhz db pk / product db py dbmv/ch dbc 110 ch 110 ch ma typ db max pkg/ style power doublers mhw7185cl 18.5 110 +44 ?64 (36) ?61 ?63 370 7.5 714y/1 mhw7185c 18.8 110 +44 ?64 (36) ?62 ?63 400 7.5 714y/1 mhw7205cl 19.5 110 +44 ?63 (36) ?61 ?62 365 7.5 714y/1 mhw7205c 19.8 110 +44 ?63 (36) ?61 ?62 400 7.5 714y/1 40?550 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar hybrid maximum distortion specifications noise h y b r id gain output 2nd composite cross n o i se fi g ure gain (nom) channel o u t pu t level 2 n d order c ompos it e tri p le beat c ross modulation dc figure @ 550 (nom) @ channel loading level order test triple beat modulation dc current @ 550 mhz @ 50 mhz loading capacity test dbc dbc current a db pk / product db py dbmv/ch dbc 77 ch 77 ch ma typ db max pkg/ style forward amplifiers mhw6342t 34.5 77 +44 ?57 (36) ?57 ?57 310 6.5 1302/1 (36) composite 2nd order; v out = +44 dbmv/ch (39) composite 2nd order; v out = +40 dbmv/ch  new product f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?39 selector guide motorola wireless rf product device data reverse amplifier modules 5?200 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar maximum distortion specifications hybrid composite cross noise y gain (nom) channel output 2nd composite triple beat cross modulation n o i se fi g ure (nom) @ channel loading output level 2nd order triple beat modulation dc figure @ 175 @ 10 mhz l oa di ng ca p acit y l eve l o r d er test (30) dbc dbc dc current @ 175 mhz product 10 mhz db capacity dbmv/ ch test (30) dbc 22 ch 26 ch 22 ch 26 ch ma typ db max pkg/ style mhw1244 24 22, 26 +50 ?72 ?68 ?67.5 (19) ?61 ?61 (19) 210 5.0 1302/1 low current amplifiers ? 5?200 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar maximum distortion specifications hybrid gi 2nd composite cross noise y gain (nom) channel output 2nd order test composite triple beat cross modulation n o i se fi g ure (nom) @ channel loading output level order test triple beat modulation dc figure @ 200 @ 5 mhz loading capacity level dbc dbc dbc dc current mhz product 5 mhz db capacity dbmv/ ch 6 ch 10 ch 6 ch 10 ch 6 ch 10 ch ma typ db max pkg/ style mhw1223la 22.7 6,10 +50 ?68 ?65 ?75 ?66 ?65 ?60 95 7.0 1302/1 mhw1253la 25.5 6,10 +50 ?68 ?66 ?75 ?66 ?65 ?61 95 6.5 1302/1 mhw1303la 30.8 6,10 +50 ?68 ?65 ?74 ?64 ?64 ?58 95 5.7 1302/1 low current amplifiers ? 5?150 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar maximum distortion specifications hybrid 2nd composite cross noise y gain (nom) channel output 2nd order test composite triple beat cross modulation n o i se fi g ure (nom) @ channel loading output level order test triple beat modulation dc figure @ 150 @ 5 mhz l oa di ng ca p acit y l eve l dbc dbc dbc dc current @ 150 mhz product 5 mhz db capacity dbmv/ ch 6 ch 10 ch 6 ch 10 ch 6 ch 10 ch ma typ db max pkg/ style mhw1353la 35.2 6,10 +50 ?68 ?65 ?73 ?62 ?63 ?57 95 5.4 1302/1 low current amplifiers ? 5?65 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar maximum distortion specifications hybrid gi 2nd composite cross noise y gain (nom) channel output 2nd order test composite triple beat cross modulation n o i se fi g ure (nom) @ channel loading output level order test triple beat modulation dc figure @ 65 @ 5 mhz loading capacity level dbc dbc dbc dc current mhz product 5 mhz db capacity dbmv/ ch 6 ch 10 ch 6 ch 10 ch 6 ch 10 ch ma typ db max pkg/ style mhw1224la 22.7 6,10 +50 ?68 ?65 ?75 ?66 ?65 ?60 95 7.0 1302/1 mhw1254la 25.5 6,10 +50 ?68 ?66 ?75 ?66 ?65 ?61 95 6.5 1302/1 mhw1304la 30.8 6,10 +50 ?68 ?65 ?74 ?64 ?64 ?58 95 5.7 1302/1 mhw1354la 35.2 6,10 +50 ?68 ?65 ?73 ?62 ?63 ?57 95 5.4 1302/1 (19) typical (30) channels 2 and a @ 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?40 motorola wireless rf product device data catv distribution: reverse amplifier modules (continued) low current amplifiers ? 5?50 mhz hybrids, v cc = 24 vdc, class a ? silicon bipolar hybrid maximum distortion specifications noise h y b r id gain output 2nd composite cross noise figure gain ( nom ) channel o u t pu t level 2 n d order c ompos it e tri p le beat c ross modulation dc fig u re @ 50 (nom) @ channel loading level order test (30) triple beat modulation dc current @ 50 mhz @ 5 mhz loading capacity test () dbc dbc current mhz product db py dbmv/ch dbc 3 ch 4 ch ma typ db max pkg/ style mhw1254l 25 4 +50 ?70 ?70 ?62 115 4.5 1302/1 (30) channels 2 and a @ 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
1?41 selector guide motorola wireless rf product device data catv distribution amplifier module packages f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
selector guide 1?42 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
2?1 motorola wireless rf product device data rf front end ics ? data sheets chapter two page device number number rfics upconverter/exciter mc13751 2?27 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . downconverter mc13770 2?31 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power amplifiers mrfic0970 2?92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfic1870 2?98 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmm5047 2?36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmm5062 2?56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmm5063 2?75 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rf building blocks amplifiers mbc13720 2?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mbc13916 2?17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
2?2 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mbc13720 rf product device data 2?3 mbc13720 ordering information device device marking package mbc13720t1 20 sot-363 package information plastic package case 419b (sot-363) (scale 2:1) the mbc13720 is a high ip3, low noise amplifier designed for 400 mhz to 2.4 ghz multistandard wireless applications. the input and output match is external to allow maximum design flexibility. the lna has two selectable current settings as well as standby mode. the lna will operate from a 2.5 to 3.0 v supply. the mbc13720 is fabricated using motorola's advanced rf bicmos process with the sige:c option and housed in an ultra small sot-363 surface mount package. ? selectable current, 5.0 ma or 11 ma ? standby mode to turn off device completely ? high input ip3: 10 dbm @ 1.9 ghz 13 dbm @ 2.4 ghz ? low noise figure: 1.38 db @ 1.9 ghz 1.55 db @ 2.4 ghz ? gain @ 9.0 ma, 2.75 v: 14.5 db @ 1.9 ghz 12 db @ 2.4 ghz ? suitable for use from 400 mhz to 2.4 ghz ? bias stabilized for device and temperature variations ? ultra small sot-363 surface mount package ? available only in tape and reel packaging technical data sheet mbc13720/d rev. 1, 01/2002 sige:c low noise amplifier with bypass switch f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications mbc13720 motorola wireless 2?4 rf product device data figure 1. simplified block diagram 1 specifications table 1. maximum ratings ratings symbol value unit supply voltage v cc 3.3 v storage temperature range t stg -65 to 150 c operating ambient temperature range t a -30 to 85 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the recommended operating conditions and electrical characteristics tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 550 v and machine model (mm) 50 v. additional est data available upon request. table 2. recommended operating conditions characteristic symbol min typ max unit operating voltage v cc 2.5 2.7 3.0 v frequency range f rf 400 - 2400 mhz table 3. electrical characteristics (v cc = 2.75, t a = 25c) characteristic symbol min typ max unit current consumption low ip3 high ip3 bypass i cc - - - 5.0 11 0 - - - ma ma a input/output return loss low ip3 high ip3 bypass rl - - - 10 10 12 - - - db en2 en1 v cc rf in rf out bias control f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications motorola wireless mbc13720 rf product device data 2?5 rf gain (900 mhz) low ip3 high ip3 bypass g - - - 20 21 -2.9 - - - db rf gain (1.9 ghz) low ip3 high ip3 bypass g - - - 13 14.5 -2.5 - - - db rf gain (2.4 ghz) low ip3 high ip3 bypass g - - - 11.5 12 -2.8 - - - db noise figure 900 mhz 1.9 ghz 2.4 ghz nf - - - 1.2 1.38 1.55 - - - db input ip3 (900 mhz) low ip3 high ip3 bypass iip3 - - - -3.5 10 27 - - - dbm input ip3 (1.9 ghz) low ip3 high ip3 bypass iip3 - - - 4.0 10 29 - - - dbm input ip3 (2.4 ghz) low ip3 high ip3 bypass iip3 - - - 6.0 13 25 - - - dbm output 1db compression (900 mhz) low ip3 high ip3 bypass p 1db - - - 12 11.5 5.0 - - - dbm output 1db compression (1.9 ghz) low ip3 high ip3 bypass p 1db - - - 11 11.5 5.0 - - - dbm output 1db compression (2.4 ghz) low ip3 high ip3 bypass p 1db - - - 14 14 5.0 - - - dbm reverse isolation low ip3 high ip3 |s 12 | - - 25 20 - - db table 3. electrical characteristics (continued) (v cc = 2.75, t a = 25c) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications mbc13720 motorola wireless 2?6 rf product device data table 4. truth table en1 en2 state current consumption 0 0 standby < 20 a 01bypass0 a 1 0 high ip3 11 ma (approx.) 1 1 low ip3 5.0 ma (approx.) note: logic state of 1 equals v cc voltage. logic state of 0 equals ground potential. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications motorola wireless mbc13720 rf product device data 2?7 table 5. low ip3 mode scattering parameters (v cc = 2.7 v, en1 = high, en2 = high) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 11 | |s 11 | |s 11 | 100 0.811 -7 11.939 168 0.010 39 0.890 -5 200 0.787 -14 11.375 157 0.015 55 0.875 -9 300 0.756 -20 10.789 148 0.021 61 0.853 -12 400 0.706 -24 9.892 138 0.026 65 0.819 -15 500 0.673 -28 8.949 131 0.031 68 0.796 -17 600 0.636 -31 8.293 125 0.036 69 0.772 -19 700 0.602 -34 7.590 119 0.040 70 0.750 -21 800 0.575 -36 6.987 114 0.045 72 0.732 -22 900 0.553 -38 6.457 109 0.050 73 0.716 -24 1000 0.531 -39 5.972 105 0.055 74 0.702 -25 1100 0.514 -40 5.566 101 0.060 75 0.690 -26 1200 0.500 -42 5.218 98 0.065 76 0.680 -27 1300 0.488 -43 4.884 95 0.070 77 0.671 -28 1400 0.477 -44 4.629 92 0.075 77 0.664 -29 1500 0.469 -45 4.373 89 0.081 78 0.657 -30 1600 0.458 -46 4.136 87 0.087 79 0.651 -31 1700 0.455 -47 3.938 84 0.093 79 0.645 -32 1800 0.450 -48 3.762 82 0.099 80 0.641 -33 1900 0.445 -49 3.614 80 0.105 80 0.636 -34 2000 0.442 -50 3.479 78 0.112 81 0.631 -35 2100 0.440 -51 3.352 76 0.119 81 0.625 -37 2200 0.438 -52 3.223 74 0.126 82 0.621 -38 2300 0.440 -53 3.127 72 0.135 82 0.619 -39 2400 0.440 -55 3.044 70 0.144 82 0.615 -41 2500 0.443 -57 2.966 68 0.154 82 0.610 -43 2600 0.446 -59 2.886 66 0.165 83 0.603 -45 2800 0.447 -64 2.778 62 0.189 83 0.589 -50 3000 0.458 -71 2.691 58 0.221 82 0.570 -56 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications mbc13720 motorola wireless 2?8 rf product device data table 6. high ip3 mode scattering parameters (v cc = 2.7 v, en1 = high, en2 = low) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 11 | |s 11 | |s 11 | 100 0.661 -8 21.189 161 0.010 36 0.829 -6 200 0.629 -14 18.913 146 0.014 54 0.801 -10 300 0.583 -20 16.730 134 0.019 61 0.764 -14 400 0.544 -21 14.168 123 0.024 67 0.726 -15 500 0.526 -23 12.141 116 0.029 71 0.709 -16 600 0.502 -25 10.757 111 0.034 73 0.690 -17 700 0.486 -26 9.523 106 0.039 75 0.676 -18 800 0.473 -27 8.531 101 0.044 76 0.665 -19 900 0.464 -28 7.725 98 0.050 77 0.656 -20 1000 0.457 -29 7.028 94 0.056 78 0.650 -21 1100 0.450 -30 6.461 92 0.061 79 0.643 -22 1200 0.446 -31 5.990 89 0.067 79 0.639 -23 1300 0.445 -32 5.551 86 0.073 80 0.634 -24 1400 0.443 -33 5.226 84 0.079 80 0.632 -25 1500 0.440 -35 4.903 82 0.085 80 0.628 -26 1600 0.437 -35 4.611 80 0.091 80 0.626 -27 1700 0.439 -37 4.370 78 0.097 80 0.623 -28 1800 0.439 -38 4.160 76 0.103 81 0.622 -29 1900 0.437 -40 3.981 74 0.111 81 0.618 -31 2000 0.440 -41 3.822 73 0.117 81 0.617 -32 2100 0.439 -42 3.675 71 0.124 81 0.613 -34 2200 0.443 -44 3.530 69 0.132 81 0.612 -35 2300 0.444 -45 3.416 68 0.140 82 0.611 -37 2400 0.448 -48 3.322 66 0.149 82 0.608 -38 2500 0.452 -50 3.236 64 0.159 81 0.605 -41 2600 0.456 -52 3.151 63 0.169 82 0.600 -43 2800 0.460 -57 3.032 59 0.193 81 0.589 -48 3000 0.472 -65 2.943 55 0.223 80 0.573 -54 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications motorola wireless mbc13720 rf product device data 2?9 table 7. bypass mode scattering parameters (v cc = 2.7 v, en1 = low, en2 = high) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 11 | |s 11 | |s 11 | 100 0.958 -11 0.115 79 0.116 80 0.950 -8 200 0.921 -21 0.222 70 0.224 70 0.925 -16 300 0.881 -30 0.318 61 0.319 61 0.889 -23 400 0.832 -38 0.399 53 0.396 53 0.849 -29 500 0.786 -45 0.457 45 0.462 46 0.806 -35 600 0.737 -52 0.515 39 0.513 39 0.764 -41 700 0.693 -57 0.552 33 0.553 33 0.724 -45 800 0.654 -63 0.585 28 0.584 28 0.689 -49 900 0.618 -67 0.610 23 0.609 23 0.655 -53 1000 0.587 -72 0.626 19 0.627 19 0.626 -57 1100 0.561 -76 0.642 16 0.643 15 0.598 -61 1200 0.533 -80 0.655 12 0.654 12 0.573 -64 1300 0.514 -83 0.660 9.0 0.663 8 0.549 -67 1400 0.493 -87 0.673 6.0 0.669 5 0.527 -71 1500 0.478 -90 0.672 2.0 0.673 2 0.506 -74 1600 0.461 -93 0.674 -1.0 0.676 -1 0.486 -78 1700 0.449 -96 0.675 -4.0 0.677 -4 0.468 -82 1800 0.435 -99 0.673 -7.0 0.675 -6 0.448 -85 1900 0.427 -102 0.671 -9.0 0.673 -9 0.431 -89 2000 0.421 -104 0.668 -11 0.670 -11 0.413 -93 2100 0.412 -107 0.663 -14 0.664 -14 0.397 -98 2200 0.407 -110 0.655 -16 0.658 -16 0.380 -103 2300 0.401 -114 0.647 -19 0.648 -19 0.364 -109 2400 0.396 -117 0.634 -21 0.638 -21 0.347 -115 2500 0.396 -121 0.622 -23 0.623 -23 0.335 -122 2600 0.396 -124 0.608 -25 0.609 -26 0.319 -130 2800 0.393 -132 0.569 -29 0.571 -29 0.294 -147 3000 0.397 -142 0.527 -32 0.528 -32 0.276 -167 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
specifications mbc13720 motorola wireless 2?10 rf product device data table 8. standby mode scattering parameters (v cc = 2.7 v, en1 = low, en2 = low) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 11 | |s 11 | |s 11 | 100 0.963 -4 0.010 35 0.010 43 0.951 -3 200 0.953 -7 0.014 61 0.016 61 0.948 -4 300 0.949 -10 0.022 71 0.022 68 0.947 -6 400 0.945 -13 0.029 76 0.029 72 0.945 -8 500 0.943 -16 0.036 75 0.036 74 0.944 -10 600 0.937 -19 0.043 70 0.043 74 0.941 -12 700 0.932 -21 0.050 76 0.049 74 0.938 -15 800 0.926 -24 0.054 74 0.056 74 0.935 -16 900 0.920 -27 0.062 75 0.063 73 0.932 -19 1000 0.914 -30 0.069 72 0.069 73 0.928 -21 1100 0.911 -33 0.075 72 0.075 72 0.923 -23 1200 0.903 -36 0.082 71 0.081 71 0.919 -25 1300 0.897 -38 0.086 72 0.087 70 0.913 -27 1400 0.892 -41 0.094 69 0.092 70 0.908 -29 1500 0.885 -44 0.097 69 0.097 69 0.902 -31 1600 0.877 -47 0.101 68 0.102 69 0.894 -33 1700 0.874 -50 0.104 68 0.106 69 0.887 -35 1800 0.861 -52 0.109 69 0.110 69 0.878 -37 1900 0.855 -55 0.115 69 0.115 69 0.868 -39 2000 0.850 -58 0.120 69 0.118 69 0.857 -42 2100 0.841 -61 0.120 70 0.122 70 0.845 -44 2200 0.831 -64 0.127 71 0.126 71 0.832 -46 2300 0.821 -67 0.132 72 0.132 73 0.816 -49 2400 0.808 -70 0.138 74 0.138 74 0.798 -52 2500 0.797 -73 0.146 75 0.146 76 0.776 -55 2600 0.784 -76 0.155 79 0.156 78 0.751 -58 2800 0.751 -82 0.183 80 0.184 81 0.688 -64 3000 0.720 -89 0.222 82 0.225 81 0.609 -70 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mbc13720 rf product device data 2?11 2 application information the mbc13720 sige:c lna is designed for applications in the 400 mhz to 2.4 ghz range. it has four different modes; low ip3, high ip3, bypass, and standby. the ic is programmable through the enable 1 and 2 pins. in low ip3 mode, the current consumption is optimized. current consumption is higher in high ip3 mode to boost the intercept point performance. the gain difference between low ip3 and high ip3 modes is typically 1.0 db and typically the low ip3 mode has a slightly better noise figure performance. the internal bypass switch is designed for broadband applications. one of the advantages of the mbc13720 is the simplification of matching network in both bypass and amplifier modes. the bypass switch is designed such that the changes of input and output return losses between bypass mode and amplifier mode is minimized. as a result, the mismatch at the lna input and output is minimized and therefore, the matching network design is simplified as well. in the design of the external matching network, conjugate match condition does not necessarily provide the best noise figure performance. balancing between noise figure, gain, and intercept point is the major design consideration. typical circuits are provided in figures 2 and 3 for 1.9 ghz, 2.4 ghz and 900 mhz applications. in figure 2, it shows the typical application circuit at 1.9 and 2.4 ghz. the noise figure, input intercept point, gain, and return losses are optimized. l2 and c2 act as a low frequency trap to improve the input intercept point. the noise figure measured on this board is 1.4 db (in low ip3 mode) at 1.9 ghz, including the external components, connectors, and pc board. the input third order intercept point is 10 dbm (in high ip3 mode). in figure 3, the typical application circuit at 900 mhz is shown. the input low frequency trap again is used to maximize the input intercept point. it has moderate ip3 performance and high gain. for higher ip3, figure 4 shows the application circuit with feedback network. capacitive feedback method is used to reduce the gain and therefore increase the 3rd order input intercept point. the feedback circuit is designed to provide unconditional stability. the corresponding pcbs are shown in figures 5 through 10. typical characteristics of the application boards are shown in table 9. figure 2. typical 1.9 and 2.4 ghz lna application schematic rf in c3 1.0 pf rf out 4 5 6 3 1 2 en2 c4 4.7 f en1 t2 t3 t1 r1 330 ? c6 27 pf t1, t2, t3 = 50 ? microstrip line @ 150 mils c1 27 pf c2 4.7 f l2 2.7 nh l1 8.2 nh bias control f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mbc13720 motorola wireless 2?12 rf product device data figure 3. typical 900 mhz lna application schematic figure 4. high ip3 900 mhz lna application schematic rf in 4 5 6 3 1 2 en2 c4 47 pf en1 t1 t2 r1 330 ? c3 3.0 pf c5 4.7 f c1 47 pf c2 4.7 f l1 8.2 nh l3 8.2 nh l2 47 nh rf out bias control rf in rf out 4 5 6 3 1 2 en2 c7 4.7 f en1 r1 330 ? c6 3.0 pf c1 150 pf c2 4.7 f r2 10 ? c3 0.5 pf c4 0.5 pf c5 1.0 pf l2 6.8 nh l1 22 nh bias control f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mbc13720 rf product device data 2?13 3.048 cm (1.2 in) 2.374 cm (0.9348 in) figure 5. 1.9/2.4 ghz pcb figure 6. 1.9/2.4 ghz assembly diagram figure 7. 900 mhz pcb figure 8. 900 mhz assembly diagram f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mbc13720 motorola wireless 2?14 rf product device data figure 9. 900 mhz capactive feedbackpcb figure 10. 900 mhz capacitive feedback assembly diagram f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mbc13720 rf product device data 2?15 table 9. typical electrical characteristics of the application schematic mode symbol high ip3 low ip3 bypass standby unit 900 mhz typical (see figure 3) gain g 21 20 -2.9 -22 db noise figure nf 1.3 1.2 2.9 - db input intermodulation intercept point iip3 2.0 -3.0 29 - dbm output intermodulation intercept point oip3 23 17 26 - dbm output 1db compression point p 1db 11.5 10.5 5.0 - dbm input return loss |s 11 | 2 11 10 12 - db output return loss |s 22| 2 11 10 15 - db reverse isolation |s 12 | 2 25 24 2.9 22 db 900 mhz high ip3 (see figure 4) gain g 16 15 -4.0 -14.5 db noise figure nf 1.4 1.3 4.0 - db input intermodulation intercept point iip3 10 3.5 27 - dbm output intermodulation intercept point oip3 26 18.5 23 - dbm output 1db compression point p 1db 11.5 12 7.0 - dbm input return loss |s 11 | 2 12 11 8.0 - db output return loss |s 22 | 2 12 12 14 - db reverse isolation |s 12 | 2 22 20 4.0 14.5 db 1.9 ghz (see figure 2) gain g 14 13 -2.5 -16 db noise figure nf 1.5 1.4 2.5 - db input intermodulation intercept point iip3 10 4.0 29 - dbm output intermodulation intercept point oip3 24.4 17 26.5 - dbm output 1db compression point p 1db 11.5 11 5.0 - dbm input return loss |s 11 | 2 10 8.0 20 - db output return loss |s 22 | 2 8.0 7.0 30 - db reverse isolation |s 12 | 2 19 19 2.5 16 db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mbc13720 motorola wireless 2?16 rf product device data 2.4 ghz (see figure 2) gain g 12 11 -2.8 -15 db noise figure nf 1.7 1.65 2.8 - db input intermodulation intercept point iip3 13 6.0 25 - dbm output intermodulation intercept point oip3 25 17.5 22 - dbm output 1db compression point p 1db 14 14 5.0 - dbm input return loss |s 11 | 2 12 10 12 - db output return loss |s 22 | 2 8.0 7.0 14 - db reverse isolation |s 12 | 2 17 17 2.8 15 db table 9. typical electrical characteristi cs of the application schematic (continued) mode symbol high ip3 low ip3 bypass standby unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13916 ordering information device device marking package mbc13916t1 916 sot-343r package information plastic package case 1404 (sot-343r) (scale 2:1) motorola wireless mbc13916 rf product device data 2?17 the mbc13916 is a cost-effective, high isolation amplifier fabricated with motorola?s advanced rf bicmos process using the sige:c module. it is intended to be a similar replacement for the mrfic0916 and is housed in the smaller sot-343r surface mount package. as with the mrfic0916, the device is designed for general purpose rf applications, but has improved high frequency gain and noise figure. on-chip bias circuitry sets the bias point, while matching is accomplished off-chip, affording the maximum in application flexibility. ? usable frequency range = 100 to 2500 mhz ? 19 db typical gain at 900 mhz, v cc = 2.7 v ?nf min (device level) = 0.9 db @ 900 mhz ?nf min (device level) = 1.9 db @ 1.9 ghz ? 2.5 dbm typical output power at 1.0 db gain compression at 900 mhz, v cc = 2.7 v ? 45 db typical reverse isolation (device level) at 900 mhz, v cc = 2.7 v ? 4.7 ma typ bias current at v cc = 2.7 v ? 2.7 to 5.0 v supply ? industry standard sot-343r package ? available only in tape and reel packaging ? device weight = 0.00642 g (typ) technical data mbc13916/d rev. 0, mm/2002 general purpose sige:c rf cascode amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13916 motorola wireless 2?18 rf product device data figure 1. functional block diagram table 1. maximum ratings ratings symbol value unit supply voltage v cc 6.0 vdc rf input power p rf 10 dbm power dissipation p dis 100 mw supply current i cc 20 ma thermal resistance, junction to case r jc 400 c/w storage temperature range t stg -65 to 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the recommended operating conditions and electrical characteristics tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 550 v and machine model (mm) 50 v. additional esd data available upon request. table 2. recommended operating conditions characteristic symbol min typ max unit rf frequency f rf 100 - 2500 mhz supply voltage v cc 2.7 - 5.0 vdc table 3. device level characteristics (v cc = 2.7 v, t a = 25 c, measured in s-parameter test fixture, unless otherwise noted.) characteristic symbol min typ max unit insertion gain f = 900 mhz f = 1900 mhz |s 21 | 2 - - 16.5 10 - - db maximum stable gain and/or minimum available gain [note 1] f = 900 mhz f = 1900 mhz msg, mag - - 24.5 14.3 - - db rf out rf in gnd gnd 2 1 3 4 (sot-343r package) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mbc13916 rf product device data 2?19 minimum noise figure [note 2] f = 900 mhz f = 1900 mhz nf min - - 0.9 1.9 - - db output third order intercept point [note 3] f = 900 mhz f = 1900 mhz oip3 - - 16.5 17 - - dbm reverse isolation f = 900 mhz f = 1900 mhz |s 12 | 2 - - -45 -31 - - db notes: 1. maximum available gain and maximum stable gain are defined by the k factor as follows: , if k > 1, , if k < 1 2. device matched for best noise figure. 3. z out matched for optimum ip3. table 3. device level characteristics (continued) (v cc = 2.7 v, t a = 25 c, measured in s-parameter test fixture, unless otherwise noted.) characteristic symbol min typ max unit mag s 21 s 12 --------- kk 2 1 ? ?? ?? = msg s 21 s 12 --------- = f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13916 motorola wireless 2?20 rf product device data figure 2. 900 mhz applications circuit configuration figure 3. 900 mhz printed circuit board table 4. electrical characteristics (v cc = 2.7 v, t a = 25 c, f rf = 900 mhz, tested in circuit shown in figure 2, unless otherwise noted.) characteristic symbol min typ max unit small signal gain s 21 17 19 21 db noise figure nf - 1.25 - db power output at 1.0 db gain compression p 1db 0 2.5 - dbm output 3rd order intercept point oip3 - 13 - dbm reverse isolation s 12 - -42 - db supply current i cc 3.8 4.7 5.6 ma z c = 50 ? l = 32 mils 2 1 3 4 v cc 8.2 nh 2.0 pf 6.8 nh 47 pf rf out rf in 2.2 pf 0.01f 100 pf z c = 50 ? l = 80 mils 3.05 cm (1.2 in) 1.9 cm (0.75 in) note: pcb material fr4 r = 4.5 h = 25 mils t = 1.75 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mbc13916 rf product device data 2?21 figure 4. 1.9 ghz application configuration circuit figure 5. 1.9 ghz printed circuit board table 5. electrical characteristics (v cc = 2.7 v, t a = 25 c, f rf = 1.9 ghz, tested in circuit shown in figure 4, unless otherwise noted.) characteristic symbol min typ max unit small signal gain s 21 9.5 11.5 13.5 db noise figure nf - 2.1 - db power output at 1.0 db gain compression p 1db - -4.0 - dbm output 3rd order intercept point oip3 - 5.5 - dbm reverse isolation s 12 - -28 - db supply current i cc 3.8 4.7 5.6 ma rf out 5.6 nh 3.3 pf 6.8 nh 0.01 f 100 pf v cc rf in 3.3 nh 3.3 pf 2 1 3 4 z c = 50 ? l = 73 mils z c = 50 ? l = 80 mils 3.05 cm (1.2 in) 1.9 cm (0.75 in) note: pcb material fr4 r = 4.5 h = 25 mils t = 1.75 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13916 motorola wireless 2?22 rf product device data figure 6. gumax versus frequency figure 7. output power versus input power figure 8. output power versus input power figure 9. supply current versus input power figure 10. supply current versus input power m a x i m u m u n i l a t e r a l g a i n ( d b ) 40 0 f, frequency (ghz) v cc = 5.0 v 3.9 v 3.3 v 2.7 v 0.5 1.0 1.5 2.0 2.5 3.0 35 30 25 20 15 10 5.0 0 3.9 v p o u t , o u t p u t p o w e r ( d b m ) 15 -30 p in , input power (dbm) f = 900 mhz v cc = 5.0 v 3.3 v 2.7 v -25 -20 -15 -10 -5.0 0 10 5.0 0 -5.0 -10 -15 p o u t , o u t p u t p o w e r ( d b m ) 15 -30 p in , input power (dbm) f = 1900 mhz v cc = 5.0 v 3.9 v 2.7 v 3.3 v -25 -20 -15 -10 -5.0 0 10 5.0 0 -5.0 -10 -15 -20 14 -30 p in , input power (dbm) f = 900 mhz i c c , s u p p l y c u r r e n t ( m a ) v cc = 5.0 v 3.9 v 3.3 v 2.7 v -25 -20 -15 -10 -5.0 0 12 10 8.0 6.0 4.0 2.0 0 i c c , s u p p l y c u r r e n t ( m a ) 16 -30 p in , input power (dbm) f = 1900 mhz v cc = 5.0 v 3.9 v 3.3 v 2.7 v -25 -20 -15 -10 -5.0 0 14 12 10 8.0 6.0 4.0 2.0 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mbc13916 rf product device data 2?23 table 6. scattering parameters (v cc = 2.7 v, 50 ? system) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 100 0.829 -11 11.98 165 0.001 17 0.955 -4 200 0.798 -21 11.43 152 0.002 47 0.957 -7 300 0.753 -31 10.69 139 0.002 55 0.956 -11 400 0.701 -39 10.12 128 0.003 56 0.955 -14 500 0.648 -46 9.28 118 0.003 51 0.955 -18 600 0.599 -53 8.66 108 0.004 49 0.954 -22 700 0.554 -58 7.95 98 0.004 41 0.947 -26 800 0.518 -61 7.33 90 0.004 24 0.941 -30 900 0.485 -65 6.83 82 0.004 15 0.933 -34 1000 0.458 -67 6.23 74 0.004 -4 0.926 -38 1100 0.438 -69 5.78 67 0.004 -28 0.915 -43 1200 0.426 -71 5.39 60 0.005 -50 0.902 -46 1300 0.417 -72 4.97 52 0.006 -74 0.893 -51 1400 0.414 -73 4.59 46 0.008 -93 0.879 -54 1500 0.415 -74 4.31 39 0.011 -106 0.868 -58 1600 0.421 -75 3.99 32 0.014 -115 0.851 -62 1700 0.430 -76 3.66 25 0.018 -125 0.835 -66 1800 0.441 -78 3.43 19 0.022 -131 0.818 -70 1900 0.455 -80 3.16 12 0.027 -139 0.803 -73 2000 0.474 -82 2.93 5 0.033 -146 0.777 -77 2100 0.490 -85 2.70 -1 0.039 -152 0.761 -81 2200 0.504 -88 2.48 -8 0.045 -159 0.735 -85 2300 0.524 -92 2.27 -14 0.052 -163 0.707 -89 2400 0.542 -95 2.09 -21 0.059 -169 0.683 -93 2500 0.559 -98 1.90 -28 0.067 -175 0.651 -98 2600 0.572 -103 1.70 -34 0.075 180 0.624 -102 2700 0.587 -106 1.56 -40 0.083 174 0.593 -107 2800 0.603 -110 1.40 -48 0.091 169 0.562 -111 2900 0.610 -114 1.26 -55 0.098 163 0.533 -116 3000 0.613 -118 1.11 -60 0.105 160 0.501 -120 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13916 motorola wireless 2?24 rf product device data table 7. scattering parameters (v cc = 3.0 v, 50 ? system) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 100 0.812 -11 13.42 165 0.001 11 0.954 -3 200 0.778 -21 12.73 151 0.001 50 0.955 -7 300 0.731 -30 11.82 138 0.002 58 0.956 -11 400 0.677 -38 11.10 127 0.003 50 0.954 -14 500 0.623 -44 10.12 116 0.003 51 0.954 -18 600 0.575 -50 9.37 107 0.003 43 0.952 -22 700 0.533 -54 8.56 98 0.003 30 0.945 -26 800 0.499 -57 7.85 90 0.004 24 0.937 -30 900 0.470 -59 7.29 82 0.004 8 0.930 -34 1000 0.448 -61 6.63 74 0.003 -11 0.923 -38 1100 0.433 -63 6.14 67 0.004 -38 0.911 -42 1200 0.423 -64 5.72 60 0.005 -58 0.900 -46 1300 0.418 -65 5.27 53 0.006 -77 0.891 -50 1400 0.421 -66 4.87 47 0.008 -96 0.878 -54 1500 0.425 -67 4.56 40 0.011 -108 0.868 -58 1600 0.432 -68 4.23 34 0.014 -120 0.852 -61 1700 0.444 -70 3.89 27 0.018 -126 0.838 -65 1800 0.459 -72 3.63 21 0.022 -133 0.822 -69 1900 0.473 -74 3.35 15 0.027 -140 0.809 -73 2000 0.490 -77 3.12 8 0.033 -147 0.784 -77 2100 0.509 -80 2.87 2 0.039 -152 0.769 -80 2200 0.527 -83 2.64 -5 0.045 -159 0.744 -84 2300 0.545 -86 2.42 -11 0.051 -163 0.717 -88 2400 0.560 -90 2.23 -17 0.059 -170 0.694 -92 2500 0.579 -94 2.03 -24 0.067 -175 0.663 -97 2600 0.594 -98 1.82 -30 0.075 -180 0.637 -101 2700 0.606 -101 1.68 -36 0.083 175 0.607 -105 2800 0.620 -105 1.50 -43 0.090 169 0.576 -110 2900 0.630 -110 1.35 -50 0.097 164 0.548 -114 3000 0.636 -113 1.19 -55 0.105 160 0.516 -119 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mbc13916 rf product device data 2?25 table 8. scattering parameters (v cc = 3.9 v, 50 ? system) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 100 0.796 -11 14.82 164 0.001 25 0.954 -3 200 0.760 -20 13.98 150 0.001 50 0.955 -7 300 0.711 -29 12.90 137 0.002 46 0.955 -11 400 0.655 -36 12.03 126 0.002 55 0.955 -14 500 0.602 -42 10.90 115 0.003 50 0.954 -18 600 0.556 -46 10.04 106 0.003 45 0.954 -22 700 0.517 -50 9.12 97 0.003 34 0.947 -26 800 0.487 -52 8.34 89 0.003 22 0.940 -30 900 0.463 -54 7.72 82 0.003 11 0.933 -34 1000 0.444 -56 7.02 74 0.003 -6 0.927 -38 1100 0.432 -57 6.49 67 0.003 -40 0.917 -42 1200 0.428 -58 6.03 61 0.005 -69 0.905 -46 1300 0.427 -59 5.55 53 0.006 -88 0.896 -50 1400 0.430 -60 5.13 48 0.008 -99 0.883 -53 1500 0.437 -61 4.81 41 0.011 -111 0.874 -57 1600 0.449 -62 4.45 35 0.014 -118 0.858 -61 1700 0.462 -64 4.09 29 0.018 -128 0.843 -64 1800 0.475 -66 3.83 23 0.022 -134 0.829 -68 1900 0.493 -69 3.53 17 0.027 -140 0.815 -72 2000 0.512 -72 3.28 10 0.032 -148 0.790 -76 2100 0.529 -75 3.03 4 0.038 -152 0.776 -79 2200 0.544 -78 2.79 -2 0.045 -159 0.752 -83 2300 0.565 -82 2.56 -8 0.051 -164 0.726 -87 2400 0.583 -85 2.37 -14 0.058 -169 0.704 -91 2500 0.599 -89 2.16 -21 0.067 -175 0.674 -96 2600 0.613 -93 1.94 -27 0.075 -179 0.648 -100 2700 0.629 -97 1.79 -32 0.083 175 0.621 -105 2800 0.643 -101 1.60 -39 0.091 170 0.589 -109 2900 0.650 -105 1.44 -46 0.098 164 0.562 -114 3000 0.653 -109 1.28 -51 0.105 160 0.531 -118 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13916 motorola wireless 2?26 rf product device data table 9. scattering parameters (v cc = 5.0 v, 50 ? system) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 100 0.719 -9 21.47 161 0.001 5 0.939 -3 200 0.678 -17 19.60 145 0.001 18 0.939 -7 300 0.628 -23 17.43 132 0.001 38 0.940 -10 400 0.579 -27 15.66 120 0.002 47 0.937 -14 500 0.540 -30 13.78 110 0.002 38 0.936 -18 600 0.512 -32 12.40 101 0.003 37 0.934 -22 700 0.492 -34 11.05 93 0.002 32 0.927 -26 800 0.480 -34 9.97 86 0.002 9 0.920 -30 900 0.472 -35 9.12 79 0.002 -14 0.914 -34 1000 0.470 -37 8.21 73 0.002 -54 0.908 -38 1100 0.473 -37 7.54 67 0.003 -75 0.899 -42 1200 0.478 -39 6.97 61 0.004 -90 0.890 -46 1300 0.484 -40 6.37 54 0.006 -101 0.884 -50 1400 0.496 -42 5.86 50 0.008 -114 0.875 -54 1500 0.509 -44 5.49 44 0.010 -120 0.871 -57 1600 0.521 -46 5.08 39 0.013 -128 0.858 -60 1700 0.535 -49 4.67 34 0.017 -133 0.848 -63 1800 0.552 -51 4.38 29 0.021 -139 0.838 -67 1900 0.570 -54 4.06 23 0.025 -144 0.829 -70 2000 0.587 -56 3.80 18 0.030 -150 0.807 -73 2100 0.604 -60 3.54 13 0.036 -154 0.795 -76 2200 0.621 -63 3.28 7 0.042 -160 0.772 -79 2300 0.643 -67 3.04 2 0.048 -164 0.746 -83 2400 0.658 -70 2.84 -4 0.056 -169 0.722 -87 2500 0.673 -74 2.61 -10 0.063 -175 0.687 -91 2600 0.690 -78 2.36 -16 0.071 -179 0.657 -96 2700 0.705 -82 2.19 -21 0.079 176 0.623 -101 2800 0.715 -86 1.97 -27 0.088 170 0.588 -107 2900 0.720 -91 1.78 -33 0.094 164 0.556 -113 3000 0.723 -94 1.57 -38 0.101 161 0.523 -119 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13751 ordering information device device marking package mc13751fc mc751 qfn-24 package information plastic package case 1307 (qfn-24) motorola wireless mc13751 rf product device data 2?27 the mc13751 is an integrated transmit upmixer and driver amplifier designed for use in cellular phones. it includes two mixers and two rf step attenuators. the device is fabricated using motorola's advanced rf bicmos process with the sige:c option and is housed in a leadless qfn-24 package. ?total gain: 22 db for low band 19.5 db for high band ? total current consumption = 53 ma (typ) ? available in tape and reel, 2500 units per 12 mm, 7 inch reel technical data sheet mc13751/d rev. 1, 10/2002 dual-band upmixer and driver amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13751 motorola wireless 2?28 rf product device data figure 1. simplified block diagram figure 2. contact connections table 1. maximum ratings rating symbol value unit supply voltage v cc 3.6 v lo input power 0dbm if input level 0dbm operating temperature range t a -30 to 85 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 250 v and machine model (mm) 25 v. additional esd data available upon request. this device contains 223 active transistors. high band if+ high band if- low band if+ low band if- lo+ lo- band select enable low band rf out high band rf out gain control high band mix out high band drv in low band mix out low band drv in rf out low band gnd rf out high band enable band select gnd if+ high band if- high band lo+ lo- if- low band if+ low band 24 1 2 3 4 5 6 18 17 16 15 14 13 23 22 21 20 19 7 8 9 10 11 12 v cc high band gnd gain control drv in high band mixout high band gnd mixout low band gnd drv in low band gnd v cc low band gnd f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mc13751 rf product device data 2?29 table 2. dc electrical characteristics characteristic symbol min typ max unit supply voltage 2.7 2.78 2.86 v power supply current - 53 64 ma enable inactive state active state - 1.6 - - 0.6 - v band 800 mhz enabled 1900 mhz enabled - 1.6 - - 0.6 - v power down state leakage current (0.2 v logic levels) --25 a gain select voltage gain high = 1 gain low = 0 1.6 - - - - 0.6 v gain select (enable and band signals current) - - 10 a table 3. electrical characteristics characteristic symbol min typ max unit if frequency low band high band 150 150 178 213 250 250 mhz lo frequency range low band high band 1002 2028 - - 1029 2125 mhz rf frequency range low band high band 824 1850 - - 849 1910 mhz if input level, both bands (differential, typ -7.0 dbm) -60 - 0 dbm lo input level, both bands (differential) -12 -10 -8.0 dbm rf gmsk output level both bands both bands, low gain 10 6.0 - - - - dbm rf linear output level, tdma both bands both bands, low gain 6.0 2.0 - - - - dbm acp @ f 30 khz, tdma @ f 60 khz, tdma @ f 200 khz, gsm @ f 400 khz, gsm -32 -51 -36 -66 - - - - - - - - dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13751 motorola wireless 2?30 rf product device data conversion gain mixer low band high band 6.3 6.5 8.3 8.5 10.3 10.5 dbc gain, driver, high gain low band high band 11.7 9.0 13.7 11 15.7 13 dbc gain, drivers, low gain low band high band 7.7 5.0 9.7 7.0 11.7 9.0 dbc noise figure mixer (ssb) drivers - - 11 5.0 14 8.0 db if impedance (differential) - 200 - w lo impedance (differential) - 100 - w rf impedance (both bands @ mixer (rf out, driver rf in and driver rf out)) -50-w table 4. spurious (measured with interstage filter) characteristic symbol min typ max unit lo leakage to rf port (both bands, p out = 6.0 dbm) - - -20 dbc if leakage to rf port (both bands) - - -50 dbc image supression (both bands) - - -20 dbc 2x image supression (both bands) - - -40 dbc lo - 2x if (both bands) - - -30 dbc 2x lo - 7x if (low band) - - -40 dbc 5 * if (low band) - - -80 dbc 11 * if (low band) - - -80 dbc table 3. electrical characteristics (continued) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13770 ordering information device device marking package pc13770fc pc70 qfn-12 package information plastic package case 1345 (qfn-12) (scale 2:1) motorola wireless mc13770 rf product device data 2?31 the mc13770 is a lna downconverter designed specifically for wcdma handsets. the lna is integrated with a bypass switch to preserve input intercept performance. the device is fabricated using motorola's advanced rf bicmos process using the sige:c option and is packaged in a 12 pin quad flat non-leaded package. ? rf input frequency: 2110 to 2170 mhz ? lna gain = 15 db (typ) ? lna input 3rd order intercept point (iip3) = 0 dbm (typ) ? lna noise figure (nf) = 1.5 db (typ) ? bypass mode included for improved intercept point performance ? double balanced mixer ? mixer conversion gain = 10 db (typ) ? mixer noise figure (nf) = 8.0 db (typ) ? mixer input 3rd order intercept point (iip3) = -3.0 dbm (typ) ? total supply current = 8.0 ma lna = 3.0 ma mixer = 5.0 ma product preview order this document from wbsg marketing rev. 1, 11/2002 w-cdma lna and downconverter f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13770 motorola wireless 2?32 rf product device data figure 1. simplified block diagram table 1. maximum ratings rating symbol value unit supply voltage v cc 3.6 v storage temperature range t stg -65 to 150 c operating temperature range t a -40 to 85 c note: maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics tables or pin descriptions section. table 2. recommended operating conditions characteristic symbol min typ max unit supply voltage 2.7 2.75 3.0 vdc logic voltage (enable and bypass pins) v input high voltage 0.85 v cc -v cc input low voltage 0 - 0.15 v cc table 3. target specifications characteristic symbol min typ max unit turn-on time - 100 - ns lna high gain mode (v cc = 2.75 v, bypass = 2.75 v, enable = 2.75 v) lna gain - 15 - db lna noise figure - 1.5 - db lna input ip3 - 0 - dbm note: tone spacing for iip3 measurement is 5.0 mhz. lna out mix in lo in+ if+ if- lna in bypass enable lo in- mix bias f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mc13770 rf product device data 2?33 lna supply current i dd -3.0-ma lna low gain mode (v cc = 2.75 v, bypass = 0 v, enable = 2.75 v) lna gain - -5.0 - db lna noise figure - 5.0 - db lna input ip3 - 20 - dbm lna supply current i dd -10- a mixer mode (v cc = 2.75 vdc, enable = 2.75 v) conversion gain - 10 - db ssb noise figure - 8.0 - db input ip3 - -3.0 - dbm supply current - 5.0 - ma lo drive level - -10 - dbm table 4. truth table (1 = 2.75 v, 0 = 0 v) enable bypass mode 00sleep 0 1 undefined - do not use 10low gain 11high gain table 5. pin function description pin symbol description 1 lna out lna output 2 bypass lna bypass control 3 mix in mixer input 4 enable chip enable 5 lo+ local oscillator input + 6 lo- local oscillator input - table 3. target specifications (continued) characteristic symbol min typ max unit note: tone spacing for iip3 measurement is 5.0 mhz. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13770 motorola wireless 2?34 rf product device data figure 2. application schematic 7 if+ differential if output + 8 if- differential if output - 9v cc supply 10 lna in lna input 11 gnd ground 12 mix bias mixer bias adjustment table 6. bill of material for application schematic component 190 mhz if 380 mhz if c3 1.2 pf 2.2 pf c4 1.2 pf 2.2 pf c10 1.2 pf 1.2 pf l3 150 nh 39 nh l4 150 nh 39 nh r3 5.0 k ? 20 k ? note: all other components are the same for both configurations. table 5. pin function description (continued) pin symbol description 10 11 12 9 8 7 6 5 1 2 3 4 c11 1.0 pf mix in lna in if l1 2.7 nh bypass lna out v cc2 v cc1 c7 33 pf c9 0.01 f c1 33 pf c12 0.5 pf c2 33 pf c8 0.01 f l3 * l4 * c3 * c4 * c10 * 8:1 c5 33 pf c6 33 pf enable lo+ r1 4.3 k l2 2.7 nh mini-circuits tc8-1 transformer r3 * r2 470 ? * see table 6 for values. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mc13770 rf product device data 2?35 figure 3. application pcb (not to scale) lo- lo+ mix in lna out if serial mc13770evk no# v c c 1 g a i n motorola enable vcc2 v2 gnd l n a i n 1 gnd f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmm5047 ordering information device device marking package mmm5047 figure 42 module package information plastic package case 1440 (module, 9x12mm) mmm5047 motorola wireless 2 ?3 6 rf pr o duct device data the mmm5047 is a 3.5 v dual-band, tri-mode (amps 800 mhz,  /4-dqpsk/gmsk 800/ 1900 mhz) single supply rf power amplifier module for the 800/1900 mhz bands. this is an integrated power amplifier with input and output matching. this device is manufactured in advanced ingap hbt. ? multi-mode and dual-band 824 to 849 mhz amps/  /4-dqpsk/gmsk 1850 to 1910 mhz  /4-dqpsk/gmsk ? single supply ingap hbt technology ? internal input and output matching ? low leakage current (<10 a) ? high linearity ? typical 3.5 v characteristics: amps: pae = 27.6% @ p out = 28 dbm  /4-dqpsk low band: pae = 36.7% acp1 = -31.7 dbc, acp2 = -58 dbc @ p out = 30 dbm gmsk low band: pae = 44.3% @ p out = 32 dbm  /4-dqpsk high band: pae = 32.2% acp1 = -33.4 dbc, acp2 = -51 dbc @ p out = 30 dbm gmsk high band: pae = 39.8% @ p out = 32 dbm ? smt module package ? small footprint (9 x 12 mm) ? low profile (<1.8 mm) product preview order this document from wbsg marketing rev. 2, 12/2002  /4-dqpsk/gmsk 800/1900 mhz 3.5 v power amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 3 7 figure 1. simplified block diagram 1 electrical characteristics table 1. maximum ratings rating symbol value unit supply voltage (dc only) 800v cc1,2,3 , 1900v cc1,2,3 6.0 v leakage current (800v reg = 1900v reg = 800i reg = 1900i reg = 0 v) v cc = 3.5 v and t a = 25 c v cc = 3.5 v and t a = 85 c v cc = 4.5 v and t a = 60 c <10 <20 <20 a maximum input power (v cc  4.5 v into 50  load) 10 dbm operating ambient temperature range t a -30 to 85 c operating case temperature range t c -30 to 90 c storage temperature range t stg -35 to 100 c maximum die temperature 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm)  60 v and machine model (mm)  50 v. additional esd data available upon request. 3. meets moisture sensitivity level (msl) 3. see figure 42 on page 56 for additional details. 800rfout 1900rfout 800rfin 1900rfin 800 v cc1 800 v reg 1900 v cc1 1900 v reg 800 i reg 800 v cc2 800 v cc3 1900 v cc2 1900 v cc3 1900 i reg high band amp (1850 to 1910 mhz) low band amp (824 to 849 mhz) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mmm5047 motorola wireless 2 ?3 8 rf pr o duct device data table 2. recommended operating conditions characteristic symbol min typ max unit collector voltage 800vcc1,2,3, 1900vcc1,2,3 3.0 - 4.5 v regulated voltage 800v reg , 1900v reg 2.7 - 2.86 v bias supply voltage 800i reg , 1900i reg 0-2.7v bias supply current 800i reg , 1900i reg 0-5.0ma input power low band amps mode low band  /4-dqpsk mode low band gmsk mode high band  /4-dqpsk mode high band gmsk mode 800rfin 1900rfin -40 -40 -30 -35 -30 - - - - - 2.0 5.0 7.0 3.0 6.0 dbm table 3. electrical characteristics (specifications guaranteed for t a = -30 to 85c, v cc = 3.0 to 4.5 v, with i reg adjusted for band and temperature, unless otherwise noted. typical values are for t a = 25c, v cc = 3.5 v, v reg = 2.75 v.) characteristic symbol min typ max unit all modes input vswr (impedance 50  ) low band high band - - 1.3:1 1.9:1 2:1 2.8:1 output vswr (impedance 50  ) low band high band - - 1.8:1 1.8:1 2.5:1 2.5:1 load mismatch stress: survival @ p out = 32 dbm, v cc = 4.5 v --10:1vswr stability: spurious output level @ vswr = 8:1 (output power under 50  load should not exceed 32 dbm) ---36dbm low band section (800 mhz) amps (100% duty cycle) operating frequency f 824 - 849 mhz recommended bias control current t a = -30c t a = 25c t a = 85c 800i reg - - - 0.8 1.2 1.6 - - - ma output power v cc 3.5 v 3.0 v  v cc < 3.5 v p out 28 27 - - - - dbm f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 39 input power (adjusted to achieve minimum output power) p in -40 - 2.0 dbm gain (minimum output power) g 25 30.3 36.8 db power added efficiency @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v pae 19 16 27.6 - - - % intermodulation due to signals at input (desired input signal adjusted for minimum p out @ 849 mhz, interfering input signal @ 829 mhz adjusted for -40 dbc relative to desired output signal) p imdout - -60.3 -46 dbc intermodulation due to signals at output (desired input signal adjusted for minimum p out @ 849 mhz, interfering signal injected at device output @ 829 mhz, -40 dbc relative to desired output signal) p imdout - -71.8 -50 dbc harmonics 2f o 3f o - - -33 -69 -27 -59 dbc rx band noise power (30 khz resolution bandwidth) - -87.6 -78 dbm  /4-dqpsk (33% duty cycle, 20 msec period) operating frequency f 824 - 849 mhz recommended bias control current t a = -30c t a = 25c t a = 85c 800i reg - - - 0.6 0.8 1.2 - - - ma output power v cc 3.5 v 3.0 v  v cc < 3.5 v p out 30 28.5 - - - - dbm input power (adjusted to achieve minimum output power) p in -40 - 5.0 dbm gain (minimum output power) g 24 29.6 36.5 db power added efficiency @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v pae 24 21 36.7 - - - % acp1 @ 30 khz @ v cc 3.5 v @ 3.0 v  v cc < 3.5 v - - -31.7 - -29 -28.5 dbc acp2 @ 60 khz - -58 -48 dbc acp3 @ 90 khz - - -48 dbc table 3. electrical characteristics (continued) (specifications guaranteed for t a = -30 to 85c, v cc = 3.0 to 4.5 v, with i reg adjusted for band and temperature, unless otherwise noted. typical values are for t a = 25c, v cc = 3.5 v, v reg = 2.75 v.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mmm5047 motorola wireless 2 ?4 0 rf pr o duct device data intermodulation due to signals at input (desired input signal adjusted for minimum p out @ 849 mhz, interfering input signal @ 829 mhz adjusted for -40 dbc relative to desired output signal) p imdout - -57.5 -50 dbc intermodulation due to signals at output (desired input signal adjusted for minimum p out @ 849 mhz, interfering signal injected at device output @ 829 mhz, -40 dbc relative to desired output signal) p imdout - -67.5 -50 dbc harmonics 2f o 3f o - - -32.4 -67.3 -27 -59 dbc error vector magnitude @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v evm - - 2.1 - 4.5 4.0 % rx band noise power (30 khz resolution bandwidth) - -85.7 -76 dbm gmsk (25% duty cycle, 4.615 msec period) operating frequency f 824 - 849 mhz recommended bias control current t a = -30 c t a = 25 c t a = 85 c 800i reg - - - 2.0 2.0 2.0 - - - ma output power v cc 3.5 v 3.0 v  v cc < 3.5 v p out 32 30.5 - - - - dbm input power (adjusted to achieve minimum output power) p in -30 - 7.0 dbm gain (minimum output power) g 24 29.9 37 db power added efficiency @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v pae 33 28.5 44.3 - - - % am/pm conversion @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v - - 1.1 - 3.0 2.0 /db intermodulation due to signals at input (desired input signal adjusted for minimum p out @ 849 mhz, interfering input signal @ 829 mhz adjusted for -40 dbc relative to desired output signal) p imdout - -50.7 -44 dbc intermodulation due to signals at output (desired input signal adjusted for minimum p out @ 849 mhz, interfering signal injected at device output @ 829 mhz, -40 dbc relative to desired output signal) p imdout - -62.3 -50 dbc table 3. electrical characteristics (continued) (specifications guaranteed for t a = -30 to 85c, v cc = 3.0 to 4.5 v, with i reg adjusted for band and temperature, unless otherwise noted. typical values are for t a = 25c, v cc = 3.5 v, v reg = 2.75 v.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 4 1 harmonics 2f o 3f o - - -33.2 -64.5 -29 -59 dbc rx band noise power (30 khz resolution bandwidth) - -86.5 -77 dbm low band harmonics @ high band output (low band @ minimum output power, high band off) 2f o 3f o (25 and 85c) 3f o (-30c) - - - -64.1 -66.2 - -60 -60 -58 dbc high band section (1900 mhz)  /4-dqpsk (33% duty cycle, 20 msec period) operating frequency f 1850 - 1910 mhz recommended bias control current t a = -30 c t a = 25 c t a = 85 c 1900i reg - - - 1.8 2.0 2.0 - - - ma output power v cc 3.5 v 3.0 v  v cc < 3.5 v p out 30 28.5 - - - - dbm input power (adjusted to achieve minimum output power) p in -35 - 3.0 dbm gain (minimum output power) g 26 31.1 36.3 db relative image band gain (freq = 2275 to 2340 mhz, relative to in-band gain at minimum p out ) - -5.0 -1.4 dbc power added efficiency @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v pae 22 19 32.2 - - - % acp1 @ 30 khz - -33.4 -29 dbc acp2 @ 60 khz - -51 -47 dbc acp3 @ 90 khz - - -48 dbc intermodulation due to signals at input (desired input signal adjusted for minimum p out @ 1910 mhz, interfering input signal @ 1890 mhz adjusted for - 40 dbc relative to desired output signal) p imdout - -69.5 -50 dbc intermodulation due to signals at output (desired input signal adjusted for minimum p out @ 1910 mhz, interfering signal injected at device output @ 1890 mhz, -40 dbc relative to desired output signal) p imdout - -64.5 -50 dbc table 3. electrical characteristics (continued) (specifications guaranteed for t a = -30 to 85c, v cc = 3.0 to 4.5 v, with i reg adjusted for band and temperature, unless otherwise noted. typical values are for t a = 25c, v cc = 3.5 v, v reg = 2.75 v.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mmm5047 motorola wireless 2 ?4 2 rf pr o duct device data harmonics 2f o 3f o - - -41.2 -53.7 -34 -46 dbc error vector magnitude @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v evm - - 1.6 - 4.5 4.0 % rx band noise power (30 khz resolution bandwidth) - -85.3 -75 dbm gmsk (25% duty cycle, 4.615 msec period) operating frequency f 1850 - 1910 mhz recommended bias control current t a = -30 c t a = 25 c t a = 85 c 1900i reg - - - 1.1 2.0 2.0 - - - ma output power v cc 3.5 v 3.0 v  v cc < 3.5 v p out 32 30.5 - - - - dbm input power (adjusted to achieve minimum output power) p in -30 - 6.0 dbm gain (minimum output power) g 25 30.9 36.1 db relative image band gain (freq = 2275 to 2340 mhz, relative to in-band gain at minimum p out ) - -5.7 -2.0 dbc power added efficiency @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v pae 28 22 39.8 - - - % am/pm conversion @ 3.0 v  v cc  3.5 v @ v cc > 3.5 v - - 1.1 - 2.5 2.0 /db intermodulation due to signals at input (desired input signal adjusted for minimum p out @ 1910 mhz, interfering input signal @ 1890 mhz adjusted for - 40 dbc relative to desired output signal) p imdout - -54.2 -45 dbc intermodulation due to signals at output (desired input signal adjusted for minimum p out @ 1910 mhz, interfering signal injected at device output @ 1890 mhz, -40 dbc relative to desired output signal) p imdout - -54.9 -48 dbc harmonics 2f o 3f o - - -41.9 -53.1 -35 -44 dbc rx band noise power (30 khz resolution bandwidth) - -86.2 -77 dbm table 3. electrical characteristics (continued) (specifications guaranteed for t a = -30 to 85c, v cc = 3.0 to 4.5 v, with i reg adjusted for band and temperature, unless otherwise noted. typical values are for t a = 25c, v cc = 3.5 v, v reg = 2.75 v.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 4 3 2 typical performance characteristics 2.1 low band (amps/  /4-dqpsk/gmsk modes) high band harmonics @ low band output (high band @ minimum output power, low band off) 2f o 3f o - - -68.7 -62.3 -63 -53 dbc figure 2. power gain in amps mode versus frequency figure 3. power added efficiency in amps mode versus frequency figure 4. second harmonic output in amps mode versus frequency figure 5. third harmonic output in amps mode versus frequency table 3. electrical characteristics (continued) (specifications guaranteed for t a = -30 to 85c, v cc = 3.0 to 4.5 v, with i reg adjusted for band and temperature, unless otherwise noted. typical values are for t a = 25c, v cc = 3.5 v, v reg = 2.75 v.) characteristic symbol min typ max unit 25c -30c 85c 824 829 834 839 844 849 31 30.5 30 29.5 29 f, frequency (mhz) power gain (db) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 29.5 29 28.5 28 27.5 27 26.5 26 f, frequency(mhz) pae (%) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 -30 -31 -32 -33 -34 -35 -36 f, frequency(mhz) h2 (dbc) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 -67 -68 -69 -70 -71 f, frequency(mhz) h3 (dbc) v cc = 3.5 v v reg = 2.75 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5047 motorola wireless 2 ?4 4 rf pr o duct device data figure 6. power gain in  /4-dqpsk mode versus frequency figure 7. power added efficiency in  /4-dqpsk mode versus frequency figure 8. adjacent channel power in  /4-dqpsk mode versus frequency figure 9. adjacent channel power in  /4-dqpsk mode versus frequency figure 10. error vector magnitude in  /4-dqpsk versus frequency figure 11. second harmonic output in  /4-dqpsk versus frequency 25c -30c 85c 824 829 834 839 844 849 30 29.8 29.6 29.4 29.2 29 f, frequency(mhz) power gain (db) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 39.5 38 37.5 37 36.5 36 35.5 35 34.5 f, frequency(mhz) pae (%) 38.5 39 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 -30 -31 -32 -33 -34 f, frequency(mhz) acp1 @ 30 khz (dbc) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 -52 -54 -56 -58 -60 -62 -64 f, frequency(mhz) acp2 @ 60 khz (dbc) v cc = 3.5 v v reg = 2.75 v 25c -30c t a = 85c 824 829 834 839 844 849 3.0 2.5 2.0 1.5 1.0 f, frequency(mhz) evm (%) v cc = 3.5 v v reg = 2.75 v 25c t a = -30c 85c 824 829 834 839 844 849 -30 -32 -33 -34 -35 f, frequency(mhz) h2 (dbc) v cc = 3.5 v v reg = 2.75 v -31 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 4 5 figure 12. third harmonic output in  /4-dqpsk versus frequency figure 13. power gain in gmsk mode versus frequency figure 14. power added efficiency in gmsk mode versus frequency figure 15. second harmonic output in gmsk mode versus frequency figure 16. third harmonic output in gmsk mode versus frequency figure 17. low band second harmonic at upper band ouput in gmsk mode versus frequency 25c t a = -30c 85c 824 829 834 839 844 849 -65 -67 -68 -69 -70 f, frequency(mhz) h3 (dbc) v cc = 3.5 v v reg = 2.75 v -66 25c -30c 85c 824 829 834 839 844 849 32 31 30 29 28 f, frequency(mhz) power gain (db) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 48 47 46 45 44 43 42 f, frequency(mhz) pae (%) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 -32 -33 -34 -35 f, frequency(mhz) h2, second harmonic (dbc) v cc = 3.5 v v reg = 2.75 v 85c 25c -30c 824 829 834 839 844 849 -62 -64 -66 -68 f, frequency(mhz) h3 (dbc) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 -63 -64 -65 -66 f, frequency(mhz) low band second harmonic @ upper band output (dbc) v cc = 3.5 v v reg = 2.75 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5047 motorola wireless 2 ?4 6 rf pr o duct device data 2.2 high band (  /4-dqpsk/gmsk modes) figure 18. low band third harmonic at high band ouput in gmsk mode versus frequency figure 19. am/pm in gmsk mode versus frequency figure 20. power gain in  /4-dqpsk mode versus frequency figure 21. power added efficiency in  /4-dqpsk mode versus frequency 25c -30c 85c 824 829 834 839 844 849 -61 -63 -65 -67 -69 f, frequency(mhz) low band h3 harmonic @ upper band output (dbc) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 824 829 834 839 844 849 2.0 1.5 1.0 0.5 f, frequency(mhz) am/pm (/db) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 33 32 31 30 29 f, frequency(mhz) power gain (db) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 34 33 32 31 f, frequency(mhz) pae (%) 1880 v cc = 3.5 v v reg = 2.75 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 4 7 figure 22. adjacent channel power in  /4-dqpsk mode versus frequency figure 23. adjacent channel power in  /4-dqpsk mode versus frequency figure 24. error vector magnitude versus in  /4-dqpsk modefrequency figure 25. second harmonic output in  /4-dqpsk mode versus frequency figure 26. third harmonic output in  /4-dqpsk mode versus frequency figure 27. relative image band gain in  /4-dqpsk mode versus frequency 25c -30c 85c 1850 1860 1870 1890 1900 1910 -32 -33 -34 -35 f, frequency(mhz) acp1 @ 30 khz (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -49 -50 -51 -52 -53 -54 f, frequency(mhz) acp2 @ 60 khz (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 3.0 2.5 2.0 1.5 1.0 0.5 0 f, frequency(mhz) evm (%) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -39 -40 -41 -42 -43 -44 f, frequency(mhz) h2 (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -52 -53 -54 -55 f, frequency(mhz) h3 (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 1850 1860 1870 1890 1900 1910 -52 -53 -54 -55 f, frequency(mhz) relative image band gain (dbc) 1880 25c -30c 85c -30c v cc = 3.5 v v reg = 2.75 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5047 motorola wireless 2 ?4 8 rf pr o duct device data figure 28. power gain in gmsk mode versus frequency figure 29. power added efficiency in gmsk mode versus frequency figure 30. second harmonic output in gmsk mode versus frequency figure 31. third harmonic output in gmsk mode versus frequency figure 32. upper band second harmonic at low band ouput in gmsk mode versus frequency figure 33. upper band third harmonic at low band ouput in gmsk mode versus frequency 25c -30c 85c 1850 1860 1870 1890 1900 1910 33 32 31 30 29 f, frequency(mhz) power gain (db) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 42 41.5 41 40.5 40 39.5 39 38.5 38 f, frequency(mhz) pae (%) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -40 -41 -42 -43 -44 f, frequency(mhz) h2 (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -51 -52 -53 -54 f, frequency(mhz) h3 (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -66 -67 -68 -69 -70 -71 f, frequency(mhz) upper band h2 @ low band output (db) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -59 -60 -61 -62 -63 -64 -65 -66 f, frequency(mhz) upper band h3 @ low band output (db) 1880 v cc = 3.5 v v reg = 2.75 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5047 rf pr o duct device data 2 ? 49 2.3 all modes figure 34. am/pm in gmsk mode versus frequency figure 35. relative image band gain in gmsk mode versus frequency figure 36. input return loss in low band versus frequency figure 37. input return loss in high band versus frequency 25c -30c 85c 1850 1860 1870 1890 1900 1910 1.5 1.25 1.0 0.75 0.5 f, frequency(mhz) am/pm (%/db) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -5.0 -5.5 -6.0 -6.5 f, frequency(mhz) relative image band gain (dbc) 1880 v cc = 3.5 v v reg = 2.75 v 25c -30c t a = 85c 824 829 834 839 844 849 -16 -17 -18 -19 -20 -21 f, frequency(mhz) irl (db) v cc = 3.5 v v reg = 2.75 v 25c -30c 85c 1850 1860 1870 1890 1900 1910 -9.0 -10 -11 -12 f, frequency(mhz) irl (db) 1880 v cc = 3.5 v v reg = 2.75 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
contact connections mmm5047 motorola wireless 2 ?5 0 rf pr o duct device data 3 contact connections table 4. contact function description contact symbol description 1 1900 rfin 1900 mhz rf input 2 gnd ground 3 1900 v reg 1900 mhz regulated dc voltage supply for 1st and 2nd stages bias circuits 4 1900 v cc2 1900 mhz dc voltage supply for 2nd stage 5 1900 i reg 1900 mhz bias adjust current supply for 3rd stage 6 gnd ground 7 n.c. not connected 8 1900 v cc3 1900 mhz dc voltage supply for 3rd stage 9 n.c. not connected 10 1900 rfout 1900 mhz rf output 11 800 rfout 800 mhz rf output 12 n.c. not connected 13 800 v cc3 800 mhz dc voltage supply for 3rd stage 14 n.c. not connected 15 n.c. not connected 16 800 i reg 800 mhz bias adjust current supply for 3rd stage 17 800 v cc2 800 mhz dc voltage supply for 2nd stage 18 800 v cc1 800 mhz dc voltage supply for 1st stage 19 800 rfin 800 mhz rf input 20 gnd ground 21 800 v reg 800 mhz regulated dc voltage supply for 1st and 2nd stages bias circuits 22 n.c. not connected 23 1900 v cc1 1900 mhz dc voltage supply for 1st stage f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
contact connections motorola wireless mmm5047 rf pr o duct device data 2 ? 5 1 figure 38. contact connections (top view, not to scale) 1900rfin gnd 1900 v reg 1900 v cc2 1900 i reg gnd 1900 v cc3 n.c. n.c. 1900rfout 800rfout n.c. 800 v cc3 n.c. n.c. 800 i reg 800 v cc2 800 v cc1 800rfin gnd 800v reg n.c. 1900v cc1 1 2345678 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 high band ground contact low band ground contact f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5047 motorola wireless 2 ?5 2 rf pr o duct device data 4 application information figure 39. application schematic mmm5047 j1, j6 dc connector he10 dil10 c1, c2 10 nf c3 220 f, 16 v smd aluminum electrolytic c4, c12 1.0 nf c5, c6, c7, c8, c9, c10, c11, c13 not mounted c14 100 nf c15 6.8 nf c16, c18 220 f, 10 v smd tantalum c17 0.5 pf c19 220 pf l1 not mounted l2 ferrite (fair-rite products, p/n 2512067007y3) l3 270 nh coilcraft r1, r2, r5, r6 0  r3, r4, r7, d1 not mounted f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5047 rf pr o duct device data 2 ? 5 3 figure 40. application pcb fr4 dielec t = .018 (0,46mm) fr4 dielec t = .018 (0,46mm) fr4 dielec t = .020 (0,50mm) top inner 2 inner 3 bottom stacking infos. notes:all via holes .015 dia (0,38 mm diam) material fr4 [ nelco] copper thickness 35 um total thickness .063 (1,6 mm) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5047 motorola wireless 2 ?5 4 rf pr o duct device data figure 41. solder reflow diagram table 5. recommended i reg versus mode and temperature temperature low band (824 to 849 mhz) high band (1850 to 1910 mhz) amps (ma)  /4-dqpsk (ma) gmsk (ma)  /4-dqpsk (ma) gmsk (ma) -30 c 0.8 0.6 2.0 1.8 1.1 25 c 1.2 0.8 2.0 2.0 2.0 85 c 1.6 1.2 2.0 2.0 2.0 time (s) sketch not to scale 180c 165c 25c time within 5c of peak 10-20 sec ramp rate 2c/sec minimum measured from 50c to 150c target peak temperature (e.g. 240c) (with machine tolerance 5c) ramp rate 217c to 240c 2c / sec minimum ramp rate - 6c/sec maximum 180 sec. min time above 165c temperature (c) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
packaging information motorola wireless mmm5047 rf pr o duct device data 2 ? 5 5 5 packaging information figure 42. shipping, packing, and marking information xxxxxxx yyww xxxxx(yy)/xxxxx(yy) xxxxxxxxxx marking (top view) tape & reel orientation (top view) tape width: 24.0 mm tape pitch 12 mm (part to part) reel diameter: 330 mm (13 in) component orientation: parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. dry pack: this device meets moisture sensitiviy level (msl) 3. parts will be shipped in dry pack. parts must be stored at 30 c and 60% relative humidity with time out of dry pack not to exceed 168 hours. in the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 1) 40 c dry out: bake devices at 40 c  t a  45 c, 5% relative humidity for at least 192 hours. 2) room temperature dry out: store devices at less than 20% relative humidity for at least 500 hours. marking: 1st line: motorola logo 2nd line: 7-digit alphanumeric part number (mmm5047) 3rd line: 5-digit x1 lot id (2-digit wafer id)/5-digit x4 lot id (2-digit wafer id) 4th line: assembly lot # xxxxxxxxxx (10-digit max.) 5th line: date code - yyww shipping, packaging and marking information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmm5062 ordering information device device marking package mmm5062 see figure 30 module package information plastic package case 1383 (module, 7x7 mm) (scale 1:1) mmm5062 motorola wireless 2 ?5 6 rf pr o duct device data the mmm5062 is a quad-band single supply rf power amplifier for gsm850/gsm900/ dcs1800/pcs1900 gprs handheld radios. this fully integrated power amplifier uses a patented concept to realize the 50 ? matching on-chip through integration of passives on the gaas die. this allows module functionality in a very small 7 x 7 mm package and achieves best-in-class power amplifier performance and multi-band capability. applications: ? quad-band gsm850/900 dcs1800 and pcs1900 ? guaranteed for class 10 gprs features: ? single supply enhancement mode gaas mesfet technology ? internal 50 ? input/output matching ? high gain three stage amplifier design ? typical 3.5 v characteristics: p out = 35.5 dbm, pae = 50% for gsm850 p out = 35.2 dbm, pae = 53% for gsm900 p out = 33.8 dbm, pae = 44% for dcs p out = 34 dbm, pae = 43% for pcs ? optimized and guaranteed for open-loop power control applications ? small 7 x 7 mm package technical data mmm5062/d rev. 3, 9/2002 quad-band gsm gprs 3.5 v power amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mmm5062 rf pr o duct device data 2 ? 5 7 figure 1. simplified block diagram 1 electrical specifications table 1. maximum ratings rating symbol value unit supply voltage v gsm1,2,3 , v dcs1,2,3 , v db 6.0 v rf input power gsm in, dcs/pcs in 10 dbm rf output power gsm section dcs/pcs section gsm out dcs/pcs out 38 36 dbm operating case temperature range t c -35 to 100 c storage temperature range t stg -55 to 150 c die temperature t j 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm)  150 v and machine model (mm)  50 v. additional esd data available upon request. 3. meets moisture sensitivity level (msl) 3. see figure 30 on page 75 for additional details. dcs/pcs amp gsm amp dcs/pcs out gsm out dcs/pcs in gsm in v dcs1 v reg v gsm1 v bs v apc v dcs2 v dcs3 v gsm2 v gsm3 v db this device contains 26 active transistors. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mmm5062 motorola wireless 2 ?5 8 rf pr o duct device data table 2. recommended operating conditions characteristic symbol min typ max unit drain supply voltage v gsm1,2,3 , v dcs1,2,3 2.7 - 5.5 v bias supply voltage v db 2.7 - 5.5 v regulated voltage v reg 2.5 2.8 3.0 v power control voltage v apc 01.82.8v band select v bs 02.83.0v input power gsm850/900 gsm in -1.0 - 8.0 dbm input power dcs/pcs dcs/pcs in 2.0 - 10 dbm table 3. control requirements characteristic symbol min typ max unit current for v reg @ 2.8 v i reg -7.710ma band select low band enable voltage high band enable voltage v bs 2.2 0 2.8 - - 0.3 v current for v bs = 2.8 v i bs - 0.76 1.0 ma table 4. electrical characteristics (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit gsm 850 section (p in = -1.0 dbm, v gsm1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = v bs = 2.8 v, v ramp = 1.8 v pulsed) frequency range bw 824 - 849 mhz output power p out 34.5 35.5 - dbm power added efficiency pae 42 50 - % output power @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 33 33.8 - dbm power added efficiency @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 43 51 - % harmonic output 2f o 3f o - - -35 -60 -30 -45 dbc second harmonic leakage at dcs output - -25 -15 dbm f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mmm5062 rf pr o duct device data 2 ? 59 input return loss |s 11 | -13-db output power isolation (v ramp = 0 v, v gsm1,2,3 = 0 v) p off --45-40dbm noise power in rx band @ p in = -1.0 dbm (100 khz measurement bandwidth) @ f o + 20 mhz f o = 849 mhz np - -83 - dbm noise power in rx band @ p in = 6.0 dbm (100 khz measurement bandwidth) @ f o + 20 mhz f o = 849 mhz np - -86 -82 dbm stability-spurious output (p out = 5.0 to 35 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 5.0 to 35 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test gsm 900 section (p in = -1.0 dbm, v gsm1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = v bs = 2.8 v, v ramp = 1.8 v pulsed) frequency range bw 880 - 915 mhz output power p out 34.2 35.2 - dbm power added efficiency pae 48 53 - % output power @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 32.5 33.4 - dbm power added efficiency @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 48 54 - % harmonic output 2f o 3f o - - -37 -60 -33 -45 dbc second harmonic leakage at dcs output (crosstalk isolation) --28-15dbm input return loss |s 11 | -10-db output power isolation (v ramp = 0 v, v gsm1,2,3 = 0 v) p off --45-40dbm noise power in rx band @ p in = -1.0 dbm (100 khz measurement bandwidth) @ f o + 10 mhz (f o = 915 mhz) @ f o + 20 mhz (f o = 915 mhz) np - - -80 -81 - - dbm noise power in rx band @ p in = 6.0 dbm (100 khz measurement bandwidth) @ f o + 10 mhz (f o = 915 mhz) @ f o + 20 mhz (f o = 915 mhz) np - - -84 -86 -77 -81 dbm table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mmm5062 motorola wireless 2 ?6 0 rf pr o duct device data stability-spurious output (p out = 5.0 to 35 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 5.0 to 35 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test dcs section (p in = 2.0 dbm, v dcs1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = 2.8 v, v ramp = 1.8 v pulsed, v bs = 0 v) frequency range bw 1710 - 1785 mhz output power p out 32.5 33.8 - dbm power added efficiency pae 38 44 - % output power @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 31 32 - dbm power added efficiency @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 38 45 - % harmonic output 2f o 3f o - - -65 -50 -45 -45 dbc input return loss |s 11 | -9.0-db output power isolation (v ramp = 0 v, v dcs1,2,3 = 0 v) p off --40-35dbm noise power in rx band @ p in = 2.0 dbm @ f o + 20 mhz (f o = 1785 mhz) (100 khz measurement bandwidth) np - -78 -75 dbm stability-spurious output (p out = 0 to 33 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 0 to 33 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test pcs section (p in = 3.0 dbm, v dcs1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = 2.8 v, v ramp = 1.8 v pulsed, v bs = 0 v) frequency range bw 1850 - 1910 mhz output power p out 32.5 34 - dbm power added efficiency pae 37 43 - % output power @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 31 32 - dbm power added efficiency @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 37 43 - % table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mmm5062 rf pr o duct device data 2 ? 6 1 harmonic output 2f o 3f o - - -65 -50 -45 -45 dbc input return loss |s 11 | -5.0-db output power isolation (v ramp = 0 v, v dcs1,2,3 = 0 v) p off --35-32dbm noise power in rx band @ p in = 3.0 dbm @ f o + 20 mhz (f o = 1910 mhz) (100 khz measurement bandwidth) np - -78 -75 dbm stability-spurious output (p out = 0 to 33 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 0 to 33 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5062 motorola wireless 2 ?6 2 rf pr o duct device data 2 typical performance characteristics 2.1 gsm850 figure 2. output power versus frequency figure 3. power added efficiency versus frequency figure 4. crosstalk versus frequency figure 5. second harmonic output versus frequency figure 6. third harmonic outputversus frequency 38 824 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 829834839844849 37 36 35 34 33 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 56 824 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 829 834 839 844 849 54 52 50 48 46 44 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c -10 824 f, frequency (mhz) c r o s s t a l k ( d b m ) 829 834 839 844 849 -15 -20 -25 -30 -35 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 38 824 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 829 834 839 844 849 37 36 35 34 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c 33 67 824 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 829 834 839 844 849 66 65 64 63 61 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v -35c t a = 25c 85c 62 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5062 rf pr o duct device data 2 ? 6 3 2.2 gsm900 figure 7. output power versus frequency figure 8. power added efficiency versus frequency figure 9. crosstalk versus frequency figure 10. second harmonic output versus frequency figure 11. third harmonic output versus frequency 38 880 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 887 894 901 908 915 37 36 35 34 33 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 60 880 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 887 894 901 908 915 55 50 45 40 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c -20 880 f, frequency (mhz) c r o s s t a l k ( d b m ) 887 894 901 908 915 -22 -28 -30 -32 -34 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c -26 -24 38 880 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 887 894 901 908 915 37 36 35 34 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c 33 70 880 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 887 894 901 908 915 69 67 66 65 63 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 64 68 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5062 motorola wireless 2 ?6 4 rf pr o duct device data 2.3 dcs figure 12. output power versus frequency figure 13. power added efficiency versus frequency figure 14. second harmonic output versus frequency figure 15. third harmonic output versus frequency 34.4 1710 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 1735 1760 1785 34 33.8 33.6 33.4 33.2 33 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 34.2 48 1710 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 1735 1760 1785 45 44 43 42 41 40 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 47 46 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 72 1710 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 1735 1760 1785 70 69 68 67 66 65 25c t a = 85c - 35c 71 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 60 1710 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 1735 1760 1785 58 57 56 55 54 25c t a = -35c 85c 59 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5062 rf pr o duct device data 2 ? 6 5 2.4 pcs figure 16. output power versus frequency figure 17. power added efficiency versus frequency figure 18. second harmonic output versus frequency figure 19. third harmonic output versus frequency 34.8 1850 f, frequency ( mhz ) p o u t , o u t p u t p o w e r ( d b m ) 1865 1895 1910 34.2 33.8 33.6 33.4 33.2 33 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 34.6 1880 34 34.4 46 1850 f, frequency ( mhz ) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 1865 1880 1910 44 42 40 38 36 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 1895 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 70 1850 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 1865 1880 1910 69 68 67 66 65 64 25c t a = 85c -35c 1895 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 59 1850 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 1865 1880 1910 53 52 51 50 49 25c t a = -35c 85c 54 1895 55 56 57 58 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin descriptions and connections mmm5062 motorola wireless 2 ?6 6 rf pr o duct device data 3 pin descriptions and connections figure 20. pin connections (bottom view) table 5. pin function description pin symbol description 1v reg regulated dc voltage for bias circuit 2v db dc supply voltage for active bias circuits connected to the battery 3 dcs/pcs out dcs/pcs rf output 4v dcs3 dcs/pcs dc supply voltage for 3rd stage 5v dcs2 dcs/pcs dc supply voltage for 2nd stage 6v dcs1 dcs/pcs dc supply voltage for 1st stage 7v apc power control for both line-ups (v apc = 0 v, p out = p off , v apc = 1.8 v, p out = p max ) 8 dcs/pcs in dcs/pcs rf input 9 gsm in gsm850/gsm900 rf input 10 v gsm1 gsm850/gsm900 dc supply voltage for 1st stage 11 v gsm2 gsm850/gsm900 dc supply voltage for 2nd stage 12 v gsm3 gsm850/gsm900 dc supply voltage for 3rd stage 13 gsm out gsm850/gsm900 rf output 14 v bs band selection between gsm850/gsm900 and dcs/pcs dcs/pcs out v db v reg v bs gsm out v gsm3 v gsm2 v gsm1 gsm in dcs/pcs in v ramp v dcs1 v dcs2 v dcs3 ground plane (0.95) (0.60) pin 1 pad corner note: for optimum performance v gsm1 and v gsm2 , as well as v dcs1 and v dcs2 , must be strapped together on the application demobard. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5062 rf pr o duct device data 2 ? 6 7 4 application information 4.1 power control considerations the mmm5062 is designed for open loop (drain control) applications. a pmos fet is used to switch the mmm5062 drain and vary the supply voltage from 0 to the battery voltage setting (v bat ). the simplified concept schematic (see figure 27) describes the application circuit used to control the device through the drain voltage. a drain control provides a linear transfer function which is repeatable versus control voltage (see figure 21). figure 21. output power versus drain voltage 4.2 gsm second harmonic (h2) trap circuitry when transmitting in gsm saturated mode, the second harmonic is naturally present at the rf output of the pa and reaches the antenna after additional filtering in the front-end. etsi specifies that harmonic level cannot exceed -36 dbm. in order to improve h2 rejection in low band (gsm850/gsm900), an h2 trap has been developed. the topology is based on a low pass  cell filter (see figure 22) where the first shunt capacitor is actually part of the pa output match. figure 22. low pass filter this circuit reduces h2 level by 7 to 8 db with low in-band insertion losses (mainly due to the series inductor). moreover, this structure can be used to match power amplifier module output to the switchplexer. 4.0 0 v d 2 , drain voltage squared (v 2 ) p o u t , o u t p u t p o w e r ( w ) 2.0 4.0 6.0 8.0 10 12 14 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 7.5 nh coilcraft 0603 8.2 pf 0402 murata 460 nh 2.2 pf 0402 murata 460 nh switchplexer gsm out f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5062 motorola wireless 2 ?6 8 rf pr o duct device data 4.3 application schematics and printed circuit boards figure 23. open loop control application schematic figure 23 represents the complete power amplifier implementation including the mmm5062 amplifier module and the control circuitry. this functionality is realized with two separate printed circuit boards; the pa evaluation circuit with schematic shown in figure 26 and pcb layout shown in figure 28, and the power amplifier control loop with schematic shown in figure 27 and pcb layout shown in figure 29. the pa evaluation circuit is straightfoward and, due to the mmm5062?s high level of integration, requires only a few passive components around the package. these components are mainly de-coupling capacitors. the power amplifier control loop is based on an operational amplifier driving a pmos transistor. the pmos device functions as a linear drain voltage regulator controlled by v ramp with a typical gain of 2 which is set through the resistive divider r4 and r5 as shown in figure 27. to control output power through the drain, v apc must be indexed to the drain voltage to prevent the pa section from drawing excessive current especially at low output power. nevertheless, v apc should stay above 0.8 v to provide sufficient gain for the line-up. figure 24 describes the application circuit used to control v apc through the drain voltage. it uses v reg to pre-position v apc at 0.9 v and add a voltage which is dependent on the drain voltage. figure 24. gsm out dcs/pcs out mmm5062 v db v d v apc ce pmos [note 1] battery v ramp v reg v bs gsm in dcs/pcs in [note 2] notes: 1. op/amp is either external (with an enable pin ce) or in an asic. 2. the mmm5062 requires 4 to 6 rf/lf decoupling capacitors (not shown). v reg = 2.8 v 0 v < v drain < v bat v apc r7 = 560  r8 = 1.0 k  r vapc = 700  internal to the die f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5062 rf pr o duct device data 2 ? 69 r8 and r vapc set v apc at 0.9 v while r7 sets the v apc slope. v apc versus v drain is shown in the figure 25. figure 25. v apc versus v drain i t is possible that the power control dac output voltage can be in the 200 mv to 2.0 v range. this raises a concern for the mmm5062 ramp control voltage (v ramp ) which must start at 0 v to get enough output power dynamic range. to overcome this limitation, a resistor (r6 in figure 27) is used to set an additional offset (200 mv with r6 = 39 k  ). this residual voltage is then subtracted the dac output voltage through the differential operational amplifier. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v drain (v) v apc (v) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5062 motorola wireless 2 ?7 0 rf pr o duct device data figure 26. pa evaluation circuit d c s / p c s o u t g s m o u t c 7 2 2 p f c 1 0 4 7 p f c 1 7 3 . 9 p f c 1 2 2 2 p f c 1 6 6 . 8 p f c 5 2 2 0 p f c 1 8 1 0 0 p f c 1 4 1 0 n f c 3 n / c c 4 n / c c 8 2 2 p f c 1 5 1 0 n f c 1 3 n / c g s m i n v g s m 1 v g s m 2 v g s m 3 d c s / p c s o u t v d b v r e g v b s g s m o u t v d c s 3 v d c s 2 v d c s 1 v a p c d c s / p c s i n c 1 1 1 . 0 n f c 2 3 3 0 p f c 6 n / c c 9 1 0 n f c 1 n / c n o t e : n / c = n o c o n n e c t , d o n o t m o u n t . g s m i n d c s / p c s i n f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5062 rf pr o duct device data 2 ? 7 1 figure 27. power amplifier control loop c1 68 f r3 12 k c3 15 pf c4 330 pf r6 39 k r4 5.6 k r5 5.6 k r11 150  c18 10 nf r2 150  c5 10 nf c6 47 nf r8 1.0 k r7 560  r10 n/c c2 330 pf c12 10 nf note: n/c = no connect, do not mount. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5062 motorola wireless 2 ?7 2 rf pr o duct device data figure 28. pa evaluation circuit pcb table 6. pa evaluation circuit pcb bill of materials reference value part number manufacturer c1, c3, c4, c6, c13 n/c - do not mount c2 330 pf grm36cog330j50 murata c5 220 pf grm36x7r221k50 murata c7, c8, c12 22 pf grm36cog220j50 murata c9, c14, c15 10 nf grm36x7r103k25 murata c10 47 pf grm36cog470j50 murata c11 1.0 nf grm36x7r102k25 murata c16 6.8 pf grm36cog6r8j50 murata c17 3.9 pf grm36cog3r9j50 murata c18 100 nf grm36x7r104k25 murata j2, j3, j4, j5 50  142-0711-821 johnson f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5062 rf pr o duct device data 2 ? 7 3 figure 29. power amplifier control loop pcb table 7. power amplifier control loop pcb bill of materials reference value part number manufacturer c1 68 f 293d685x9020c sprague c2 330 pf grm36cog330j50 murata c3 15 pf grm36cog150j50 murata c4 330 pf grm36x7r331k50 murata c5, c12, c18 10 nf grm36x7r103k25 murata c6 47 nf grm36x7r473k10 murata j1, j2, j3 dc connector q1 power mosfet nths5445t on semiconductor q2 n/c - do not mount r1, r8 1.0 k crg0402 5% 1 ko neohm r2 150  crg0402 5% 150 o neohm r3 12 k crg0402 5% 12 ko neohm r4, r5 5.6 k crg0402 5% 5.6 ko neohm r6, r10 n/c - do not mount r7 560  crg0402 5% 560 o neohm r11 100  crg0402 5% 100 o neohm u1 cmos op amp ad8591 analog devices f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
packaging information mmm5062 motorola wireless 2 ?7 4 rf pr o duct device data 5 packaging information figure 30. packaging information marking (top view) mmm5062 awlyyww llllll www tape & reel orientation (top view) b tape width: 16.0 mm tape pitch 12 mm (part to part) reel diameter: 330 mm (13 in) component orientation: parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. dry pack: this device meets moisture sensitiviy level (msl) 3. parts will be shipped in dry pack. parts must be stored at 30 c and 60% relative humidity with time out of dry pack not to exceed 168 hours. in the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 1) 40 c dry out: bake devices at 40 c  t a  45 c, 5% relative humidity for at least 192 hours. 2) room temperature dry out: store devices at less than 20% relative humidity for at least 500 hours. marking: 1st line: motorola logo 2nd line: partnumber coded on 7 characters 3rd line: wafer lot number (coded on 6 characters) followed by wafer num- ber (coded on 3 digits) 4th line: assy site code (on 1 or 2 characters), followed by wafer lot num- ber (coded on 1 or 2 characte rs), followed by year (on 2 digits) and workweek (on 2 digits). shipping, packaging and marking information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmm5063 ordering information device device marking package mmm5063 see figure 25 module package information plastic package case 1383 (module, 7x7 mm) (scale 1:1) motorola wireless mmm5063 rf pr o duct device data 2 ? 7 5 the mmm5063 is a tri-band single supply rf power amplifier for gsm900/dcs1800/ pcs1900 gprs handheld radios. this fully integrated power amplifier uses a patented concept to realize the 50  matching on-chip through integration of passives on the gaas die. this allows module functionality in a very small 7 x 7 mm package and achieves best-in- class power amplifier performance and multi-band capability. applications: ? tri-band gsm900 dcs1800 and pcs1900 ? guaranteed for class 10 gprs features: ? single supply enhancement mode gaas mesfet technology ? internal 50  input/output matching ? high gain three stage amplifier design ? typical 3.5 v characteristics: p out = 35.2 dbm, pae = 53% for gsm p out = 33.8 dbm, pae = 44% for dcs p out = 34 dbm, pae = 43% for pcs ? optimized and guaranteed for open-loop power control applications ? small 7 x 7 mm package advance information mmm5063/d rev. 0, 12/2002 tri-band gsm gprs 3.5 v power amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mmm5063 motorola wireless 2 ?7 6 rf pr o duct device data figure 1. simplified block diagram 1 electrical specifications table 1. maximum ratings rating symbol value unit supply voltage v gsm1,2,3 , v dcs1,2,3 , v db 6.0 v rf input power gsm in, dcs/pcs in 11 dbm rf output power gsm section dcs/pcs section gsm out dcs/pcs out 38 36 dbm operating case temperature range t c -35 to 100 c storage temperature range t stg -55 to 150 c die temperature t j 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm)  150 v and machine model (mm)  50 v. additional esd data available upon request. 3. meets moisture sensitivity level (msl) 3. see figure 25 on page 93 for additional details. dcs/pcs amp gsm amp dcs/pcs out gsm out dcs/pcs in gsm in v dcs1 v reg v gsm1 v bs v apc v dcs2 v dcs3 v gsm2 v gsm3 v db this device contains 26 active transistors. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mmm5063 rf pr o duct device data 2 ? 7 7 table 2. recommended operating conditions characteristic symbol min typ max unit drain supply voltage v gsm1,2,3 , v dcs1,2,3 2.7 - 5.5 v bias supply voltage v db 2.7 - 5.5 v regulated voltage v reg 2.5 2.8 3.0 v power control voltage v apc 01.82.8v band select v bs 02.83.0v input power gsm gsm in -1.0 - 8.0 dbm input power dcs/pcs dcs/pcs in 2.0 - 10 dbm table 3. control requirements characteristic symbol min typ max unit current for v reg @ 2.8 v i reg -7.710ma band select low band enable voltage high band enable voltage v bs 2.2 0 2.8 - - 0.3 v current for v bs = 2.8 v i bs - 0.76 1.0 ma table 4. electrical characteristics (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit gsm 900 section (p in = -1.0 dbm, v gsm1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = v bs = 2.8 v, v ramp = 1.8 v pulsed) frequency range bw 880 - 915 mhz output power p out 34.2 35.2 - dbm power added efficiency pae 48 53 - % output power @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 32.5 33.4 - dbm power added efficiency @ low voltage (v gsm1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 48 54 - % harmonic output 2f o 3f o - - -37 -60 -33 -45 dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mmm5063 motorola wireless 2 ? 78 rf pr o duct device data second harmonic leakage at dcs output (crosstalk isolation) --28-15dbm input return loss |s 11 | -10-db output power isolation (v ramp = 0 v, v gsm1,2,3 = 0 v) p off --45-40dbm noise power in rx band @ p in = -1.0 dbm (100 khz measurement bandwidth) @ f o + 10 mhz (f o = 915 mhz) @ f o + 20 mhz (f o = 915 mhz) np - - -80 -81 - - dbm noise power in rx band @ p in = 6.0 dbm (100 khz measurement bandwidth) @ f o + 10 mhz (f o = 915 mhz) @ f o + 20 mhz (f o = 915 mhz) np - - -84 -86 -77 -81 dbm stability-spurious output (p out = 5.0 to 35 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 5.0 to 35 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test dcs section (p in = 2.0 dbm, v dcs1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = 2.8 v, v ramp = 1.8 v pulsed, v bs = 0 v) frequency range bw 1710 - 1785 mhz output power p out 32.5 33.8 - dbm power added efficiency pae 38 44 - % output power @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 31 32 - dbm power added efficiency @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 38 45 - % harmonic output 2f o 3f o - - -65 -50 -45 -45 dbc input return loss |s 11 | -9.0-db output power isolation (v ramp = 0 v, v dcs1,2,3 = 0 v) p off --40-35dbm noise power in rx band @ p in = 2.0 dbm @ f o + 20 mhz (f o = 1785 mhz) (100 khz measurement bandwidth) np - -78 -75 dbm stability-spurious output (p out = 0 to 33 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mmm5063 rf pr o duct device data 2 ? 79 load mismatch stress (p out = 0 to 33 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test pcs section (p in = 3.0 dbm, v dcs1,2,3 = 3.5 v pulsed, v db = 3.5 v, v reg = 2.8 v, v ramp = 1.8 v pulsed, v bs = 0 v) frequency range bw 1850 - 1910 mhz output power p out 32.5 34 - dbm power added efficiency pae 37 43 - % output power @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) p out 31 32 - dbm power added efficiency @ low voltage (v dcs1,2,3 = 2.8 v pulsed, v db = 2.8 v) pae 37 43 - % harmonic output 2f o 3f o - - -65 -50 -45 -45 dbc input return loss |s 11 | -5.0-db output power isolation (v ramp = 0 v, v dcs1,2,3 = 0 v) p off --35-32dbm noise power in rx band @ p in = 3.0 dbm @ f o + 20 mhz (f o = 1910 mhz) (100 khz measurement bandwidth) np - -78 -75 dbm stability-spurious output (p out = 0 to 33 dbm, load vswr = 6:1 all phase angles, adjust v ramp for specified power) p spur ---60dbc load mismatch stress (p out = 0 to 33 dbm, load vswr = 10:1 all phase angles, 5 seconds, adjust v ramp for specified power) no degradation in output power before and after test table 4. electrical characteristics (continued) (peak measurement at 25% duty cycle, 4.6 ms period, t a = 25 c, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5063 motorola wireless 2 ?8 0 rf pr o duct device data 2 typical performance characteristics 2.1 gsm figure 2. output power versus frequency figure 3. power added efficiency versus frequency figure 4. crosstalk versus frequency figure 5. second harmonic output versus frequency 38 880 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 887 894 901 908 915 37 36 35 34 33 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 60 880 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 887 894 901 908 915 55 50 45 40 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c -20 880 f, frequency (mhz) c r o s s t a l k ( d b m ) 887 894 901 908 915 -22 -28 -30 -32 -34 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c -26 -24 38 880 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 887 894 901 908 915 37 36 35 34 32 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = 85c -35c 33 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mmm5063 rf pr o duct device data 2 ? 8 1 2.2 dcs figure 6. third harmonic output versus frequency figure 7. output power versus frequency figure 8. power added efficiency versus frequency figure 9. second harmonic output versus frequency figure 10. third harmonic output versus frequency 70 880 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 887 894 901 908 915 69 67 66 65 63 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 64 68 34.4 1710 f, frequency (mhz) p o u t , o u t p u t p o w e r ( d b m ) 1735 1760 1785 34 33.8 33.6 33.4 33.2 33 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 34.2 48 1710 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 1735 1760 1785 45 44 43 42 41 40 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 47 46 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 72 1710 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 1735 1760 1785 70 69 68 67 66 65 25c t a = 85c - 35c 71 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 60 1710 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 1735 1760 1785 58 57 56 55 54 25c t a = -35c 85c 59 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mmm5063 motorola wireless 2 ?8 2 rf pr o duct device data 2.3 pcs figure 11. output power versus frequency figure 12. power added efficiency versus frequency figure 13. second harmonic output versus frequency figure 14. third harmonic output versus frequency 34.8 1850 f, frequency ( mhz ) p o u t , o u t p u t p o w e r ( d b m ) 1865 1895 1910 34.2 33.8 33.6 33.4 33.2 33 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 34.6 1880 34 34.4 46 1850 f, frequency ( mhz ) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 1865 1880 1910 44 42 40 38 36 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 25c t a = -35c 85c 1895 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 70 1850 f, frequency (mhz) h 2 , s e c o n d h a r m o n i c ( d b c ) 1865 1880 1910 69 68 67 66 65 64 25c t a = 85c -35c 1895 v gsm1,2,3 = 3.5 v v db = 3.5 v v apc = 2.2 v 59 1850 f, frequency (mhz) h 3 , t h i r d h a r m o n i c ( d b c ) 1865 1880 1910 53 52 51 50 49 25c t a = -35c 85c 54 1895 55 56 57 58 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
contact descriptions and connections motorola wireless mmm5063 rf pr o duct device data 2 ? 8 3 3 contact descriptions and connections figure 15. contact connections (bottom view) table 5. contact function description pin symbol description 1v reg regulated dc voltage for bias circuit 2v db dc supply voltage for active bias circuits connected to the battery 3 dcs/pcs out dcs/pcs rf output 4v dcs3 dcs/pcs dc supply voltage for 3rd stage 5v dcs2 dcs/pcs dc supply voltage for 2nd stage 6v dcs1 dcs/pcs dc supply voltage for 1st stage 7v apc power control for both line-ups (v apc = 0 v, p out = p off , v apc = 1.8 v, p out = p max ) 8 dcs/pcs in dcs/pcs rf input 9 gsm in gsm rf input 10 v gsm1 gsm dc supply voltage for 1st stage 11 v gsm2 gsm dc supply voltage for 2nd stage 12 v gsm3 gsm dc supply voltage for 3rd stage 13 gsm out gsm rf output 14 v bs band selection between gsm and dcs/pcs dcs/pcs out v db v reg v bs gsm out v gsm3 v gsm2 v gsm1 gsm in dcs/pcs in v ramp v dcs1 v dcs2 v dcs3 ground plane (0.95) (0.60) pin 1 pad corner note: for optimum performance v gsm1 and v gsm2 , as well as v dcs1 and v dcs2 , must be strapped together on the application demobard. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5063 motorola wireless 2 ?8 4 rf pr o duct device data 4 application information 4.1 power control considerations the mmm5063 is designed for open loop (drain control) applications. a pmos fet is used to switch the mmm5063 drain and vary the supply voltage from 0 to the battery voltage setting (v bat ). the simplified concept schematic (see figure 22) describes the application circuit used to control the device through the drain voltage. a drain control provides a linear transfer function which is repeatable versus control voltage (see figure 16). figure 16. output power versus drain voltage 4.2 gsm second harmonic (h2) trap circuitry when transmitting in gsm saturated mode, the second harmonic is naturally present at the rf output of the pa and reaches the antenna after additional filtering in the front-end. etsi specifies that harmonic level cannot exceed -36 dbm. in order to improve h2 rejection in low band (gsm), an h2 trap has been developed. the topology is based on a low pass  cell filter (see figure 17) where the first shunt capacitor is actually part of the pa output match. figure 17. low pass filter this circuit reduces h2 level by 7 to 8 db with low in-band insertion losses (mainly due to the series inductor). moreover, this structure can be used to match power amplifier module output to the switchplexer. 4.0 0 v d 2 , drain voltage squared (v 2 ) p o u t , o u t p u t p o w e r ( w ) 2.0 4.0 6.0 8.0 10 12 14 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 7.5 nh coilcraft 0603 8.2 pf 0402 murata 460 nh 2.2 pf 0402 murata 460 nh switchplexer gsm out f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5063 rf pr o duct device data 2 ? 8 5 4.3 application schematics and printed circuit boards figure 18. open loop control application schematic figure 18 represents the complete power amplifier implementation including the mmm5063 amplifier module and the control circuitry. this functionality is realized with two separate printed circuit boards; the pa evaluation circuit with schematic shown in figure 21 and pcb layout shown in figure 23, and the power amplifier control loop with schematic shown in figure 22 and pcb layout shown in figure 24. the pa evaluation circuit is straightfoward and, due to the mmm5063?s high level of integration, requires only a few passive components around the package. these components are mainly de-coupling capacitors. the power amplifier control loop is based on an operational amplifier driving a pmos transistor. the pmos device functions as a linear drain voltage regulator controlled by v ramp with a typical gain of 2 which is set through the resistive divider r4 and r5 as shown in figure 22. to control output power through the drain, v apc must be indexed to the drain voltage to prevent the pa section from drawing excessive current especially at low output power. nevertheless, v apc should stay above 0.8 v to provide sufficient gain for the line-up. figure 19 describes the application circuit used to control v apc through the drain voltage. it uses v reg to pre-position v apc at 0.9 v and add a voltage which is dependent on the drain voltage. figure 19. gsm out dcs/pcs out mmm5063 v db v d v apc ce pmos [note 1] battery v ramp v reg v bs gsm in dcs/pcs in [note 2] notes: 1. op/amp is either external (with an enable pin ce) or in an asic. 2. the mmm5063 requires 4 to 6 rf/lf decoupling capacitors (not shown). v reg = 2.8 v 0 v < v drain < v bat v apc r7 = 560  r8 = 1.0 k  r vapc = 700  internal to the die f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5063 motorola wireless 2 ?8 6 rf pr o duct device data r8 and r vapc set v apc at 0.9 v while r7 sets the v apc slope. v apc versus v drain is shown in the figure 20. figure 20. v apc versus v drain i t is possible that the power control dac output voltage can be in the 200 mv to 2.0 v range. this raises a concern for the mmm5063 ramp control voltage (v ramp ) which must start at 0 v to get enough output power dynamic range. to overcome this limitation, a resistor (r6 in figure 22) is used to set an additional offset (200 mv with r6 = 39 k  ). this residual voltage is then subtracted the dac output voltage through the differential operational amplifier. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v drain (v) v apc (v) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5063 rf pr o duct device data 2 ? 8 7 figure 21. pa evaluation circuit d c s / p c s o u t g s m o u t c 7 2 2 p f c 1 0 4 7 p f c 1 7 3 . 9 p f c 1 2 2 2 p f c 1 6 6 . 8 p f c 5 2 2 0 p f c 1 8 1 0 0 p f c 1 4 1 0 n f c 3 n / c c 4 n / c c 8 2 2 p f c 1 5 1 0 n f c 1 3 n / c g s m i n v g s m 1 v g s m 2 v g s m 3 d c s / p c s o u t v d b v r e g v b s g s m o u t v d c s 3 v d c s 2 v d c s 1 v a p c d c s / p c s i n c 1 1 1 . 0 n f c 2 3 3 0 p f c 6 n / c c 9 1 0 n f c 1 n / c n o t e : n / c = n o c o n n e c t , d o n o t m o u n t . g s m i n d c s / p c s i n f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5063 motorola wireless 2 ? 88 rf pr o duct device data figure 22. power amplifier control loop c1 68 f r3 12 k c3 15 pf c4 330 pf r6 39 k r4 5.6 k r5 5.6 k r11 150  c18 10 nf r2 150  c5 10 nf c6 47 nf r8 1.0 k r7 560  r10 n/c c2 330 pf c12 10 nf note: n/c = no connect, do not mount. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mmm5063 rf pr o duct device data 2 ? 89 figure 23. pa evaluation circuit pcb table 6. pa evaluation circuit pcb bill of materials reference value part number manufacturer c1, c3, c4, c6, c13 n/c - do not mount c2 330 pf grm36cog330j50 murata c5 220 pf grm36x7r221k50 murata c7, c8, c12 22 pf grm36cog220j50 murata c9, c14, c15 10 nf grm36x7r103k25 murata c10 47 pf grm36cog470j50 murata c11 1.0 nf grm36x7r102k25 murata c16 6.8 pf grm36cog6r8j50 murata c17 3.9 pf grm36cog3r9j50 murata c18 100 nf grm36x7r104k25 murata j2, j3, j4, j5 50  142-0711-821 johnson f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mmm5063 motorola wireless 2 ?9 0 rf pr o duct device data figure 24. power amplifier control loop pcb table 7. power amplifier control loop pcb bill of materials reference value part number manufacturer c1 68 f 293d685x9020c sprague c2 330 pf grm36cog330j50 murata c3 15 pf grm36cog150j50 murata c4 330 pf grm36x7r331k50 murata c5, c12, c18 10 nf grm36x7r103k25 murata c6 47 nf grm36x7r473k10 murata j1, j2, j3 dc connector q1 power mosfet nths5445t on semiconductor q2 n/c - do not mount r1, r8 1.0 k crg0402 5% 1 ko neohm r2 150  crg0402 5% 150 o neohm r3 12 k crg0402 5% 12 ko neohm r4, r5 5.6 k crg0402 5% 5.6 ko neohm r6, r10 n/c - do not mount r7 560  crg0402 5% 560 o neohm r11 100  crg0402 5% 100 o neohm u1 cmos op amp ad8591 analog devices f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
packaging information motorola wireless mmm5063 rf pr o duct device data 2 ? 9 1 5 packaging information figure 25. packaging information marking (top view) mmm5063 awlyyww llllll www tape & reel orientation (top view) b tape width: 16.0 mm tape pitch 12 mm (part to part) reel diameter: 330 mm (13 in) component orientation: parts are to be orientated with pin 1 side closest to the tape's round sprocket holes on the tape's trailing edge. dry pack: this device meets moisture sensitiviy level (msl) 3. parts will be shipped in dry pack. parts must be stored at 30 c and 60% relative humidity with time out of dry pack not to exceed 168 hours. in the event that parts are not handled or stored within these limits, one of the following dry out procedures must be completed prior to reflow: 1) 40 c dry out: bake devices at 40 c  t a  45 c, 5% relative humidity for at least 192 hours. 2) room temperature dry out: store devices at less than 20% relative humidity for at least 500 hours. marking: 1st line: motorola logo 2nd line: partnumber coded on 7 characters 3rd line: wafer lot number (coded on 6 characters) followed by wafer num- ber (coded on 3 digits) 4th line: assy site code (on 1 or 2 characters), followed by wafer lot num- ber (coded on 1 or 2 characte rs), followed by year (on 2 digits) and workweek (on 2 digits). shipping, packaging and marking information f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfic0970 ordering information device marking package mrfic0970 0970 qfn-20 package information plastic package case 1308 (qfn-20) (scale 2:1) mrfic0970 motorola wireless 2 ?9 2 rf pr o duct device data the mrfic0970 is a single supply, rf power amplifier designed for the 2.0 w gsm900 handheld radios. the device is packaged in the qfn-20 package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact. ? target 3.2 v characteristics: rf output power: 34.5 dbm typical efficiency: 50% typical ? single positive supply solution ? available in tape and reel only. r2 suffix = 2500 units per 12 mm, 13 inch reel technical data mrfic0970/d rev. 0, 07/2002 3.2 v gsm gaas integrated power amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mrfic0970 rf pr o duct device data 2 ? 9 3 figure 1. functional block diagram 1 electrical characteristics table 1. maximum ratings rating symbol value unit supply voltage v d1,2,3 , v abc v ref 8.0 5.0 v v rf input power p in 15 dbm rf output power p out 38 dbm operating case temperature range t c -40 to 85 c storage temperature range t stg -40 to 85 c junction temperature t j 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2 esd (electrostatic discharge) immunity meets human body model (hbm)  250 v and machine model (mm)  60 v. this device is rated moisture sensitivity level (msl) 1. additional esd data available upon request. table 2. recommended operating conditions characteristic symbol min typ max unit supply voltage v d1,2,3 v abc v ref 2.8 0 0.04 - - - 5.5 5.5 1.8 vdc v v input power p in 5.0 - 10 dbm abc1,2 abc3 d1 d2 d3 gnd v g3 v gg3 abc v gg1, 2 v g1,2 rfin (g1) v ref f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mrfic0970 motorola wireless 2 ?9 4 rf pr o duct device data table 3. electrical specifications (v d1,2,3 = 3.2 v, v abc = 2.6 v, p in = 5.0 dbm, peak measurement at 12.5% duty cycle, 4.6 ms period, t a = 25c, unless otherwise noted.) characteristic symbol min typ max unit frequency range bw 880 - 915 mhz output power p out 34.5 - - dbm power added efficiency pae 50 - - % minimum output power (v ref = 0.04, v abc = 2.6 v) - - -17 dbm power control slope (v ref = 0.1 to 1.8 v,
v ref = 0.01 v) - - 50:1 rfvrms /v ref bleed thru power (p in(fo)  -12dbm, v ref = 0.04, v abc = 10 k load) ---36dbm rf leakage current (i dd1 + i dd2 +i dd3, pin (f o )  5.0 dbm) (v abc = 10 k load, v ref = 0.04 v) --35ma output power switching speed ( step input of v ref rf pout within 1.0 db of final value) --1.0 s input return loss |s11| - - 6.0 db noise power in rx band 925 to 935 mhz 935 to 960 mhz np - - - - -73 -85 dbm stability-spurious output (load vswr 6:1 all phase angles, adjust v d1, 2&3 for specified power) p spur ---30dbc load mismatch stress (load vswr = 10:1 all phase angles, 5 seconds, adjust v d1, 2&3 for specified power) no degradation in output power before & after test f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections motorola wireless mrfic0970 rf pr o duct device data 2 ? 9 5 2 pin connections figure 2. pin connections 3 typical performance characteristics figure 3. output power versus frequency v g3 v g1,2 v gg1,2 abc v gg3 d2 n.c. n.c. n.c. n.c. 1 2 3 4 5 15 14 13 12 11 678910 20 19 18 17 16 s1/ gnd n.c. rfin (g1) n.c. d1 n.c. d3/ rf out d3/ rf out d3/ rf out d3/ rf out p o u t , o u t p u t p o w e r ( d b m ) f, frequency (mhz) 35.6 35.4 35.2 35 34.8 34.6 34.4 34.2 880 885 890 895 900 905 910 915 t a = -40c 25c 85c p in = 5.0 dbm v dd = 3.2 v v ref = 1.8 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mrfic0970 motorola wireless 2 ?9 6 rf pr o duct device data figure 4. output power versus frequency figure 5. power added efficiency versus frequency figure 6. power added efficiency versus frequency p o u t , o u t p u t p o w e r ( d b m ) f, frequncy (mhz) v dd = 5.5 v 3.2 v 2.8 v p in = 5.0 dbm t a = 25c v ref = 1.8 v 880 885 890 895 900 905 910 915 38 37.5 37 36.5 36 35.5 35 34.5 34 33.5 f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 65 60 55 50 45 880 885 890 895 900 905 910 915 t a = -40c 25c 85c p in = 5.0 dbm v dd = 3.2 v v ref = 1.8 v f, frequency (mhz) p a e , p o w e r a d d e d e f f i c i e n c y ( % ) 65 60 55 50 45 40 35 880 885 890 895 900 905 910 915 v dd = 2.8 v 3.2 v 5.5 v p in = 5.0 dbm t a = 25c v ref = 1.8 v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application schematic motorola wireless mrfic0970 rf pr o duct device data 2? 97 4 application schematic figure 7. application schematic n.c. n.c. 1 2 3 4 5 15 14 13 12 11 678910 20 19 18 17 16 n.c. v dd1 rf in 470 470 680 240 12 1.0 nf t1 27 pf 6.8 pf 1.0 nf 1.0 nf 1.0 nf 1.0 nf 1.0 nf 0.1 f v g1,2 v ref abc v g3 rf out 1 . 0 n f v dd2 12.55 nh coilcraft 1601-10 4700 pf v dd3 t2 t3 t4 t5 t1 = .100 in, z o = 50  t2 = .275 in, z o = 50  t3 = .166 in, z o = 50  t4 = .041 in, z o = 50  t5 = .420 in, z o = 50  n.c. n.c. n.c. 0 . 0 1 f 4 7 0 0 p f 3 9 p f 2 . 7 0.1 f 1.0 f ferrite bead 120  100 pf 0.1 f 0.1 f 47 f f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfic1870 ordering information device device marking package mrfic1870 1870 qfn-20 package information plastic package case 1308 (qfn-20) mrfic1870 motorola wireless 2 ? 98 rf pr o duct device data the mrfic1870 is a single supply, rf power amplifier designed for the 2.0 w dcs/pcs handheld radios. the device is packaged in the qfn-20 package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact. ? target 3.2 v characteristics: rf output power: 32 dbm minimum efficiency: 42% minimum ? single positive supply solution figure 1. functional block diagram d1 d2 g3 d3 gnd v g3 v gg3 abc v gg1,2 vg1,2 g1 abc1,2 abc3 v ref product preview mrfic1870pp/d rev. 0, 02/2003 3.2 v dcs/pcs gaas integrated power amplifier f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola wireless mrfic1870 rf pr o duct device data 2? 99 figure 2. contact connections v g3 v g1,2 v gg1,2 abc v gg3 d2 gnd g3 g3 gnd 1 2 3 4 5 15 14 13 12 11 6789 10 20 19 18 17 16 s1/ gnd n.c. g1 gnd d1 d3/ rf out d3/ rf out gnd d3/ rf out d3/ rf out f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfic1870 motorola wireless 2 ?1 0 0 rf pr o duct device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3?1 motorola wireless rf product device data rf/if subsystems ? data sheets chapter three page device number number transceivers mc13190 3?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . miscellaneous functions adcs/dacs mc144110 3?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc144111 3?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . encoders/decoders mc145026 3?23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145027 3?23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145028 3?23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3?2 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc13190 ordering information device device marking package mc13190fc 13190 qfn-32 package information plastic package case 1311 (qfn-32, 5x5 mm) motorola wireless mc13190 rf product device data 3?3 the mc13190 is a short-range, low-power 2.4 ghz ism band single chip radio. together with an appropriate microprocessor or dsp for a baseband controller, it provides cost effective solutions for short-range (up to 10 meters), battery-powered data links. applications include remote control, wire replacement, wireless streaming audio, and wireless game control. the receiver includes a low noise amplifier (lna), am demodulator, band pass filter and limiting if. the transmitter includes modulation control, baseband filtering and am modulator. an on-chip pll/vco derives the rf frequency from a fixed 256 multiplication of the reference frequency. the device is fabricated using motorola's rf bicmos process and is housed in a 32 lead qfn package with backside ground. ? typical receiver sensitivity: -71 dbm for 2x10 -4 bit error rate (ber) ? typical output power = 4.8 dbm ? fully differential rf input and output advance information mc13190/d rev. 0, 10/2002 2.4 ghz short-range, low-power transceiver f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mc13190 motorola wireless 3?4 rf product device data figure 1. simplified block diagram 1 electrical specifications table 1. maximum ratings rating symbol value unit supply voltage v cc , v dd 3.2 v signal and control ic contacts 3.2 v demodulator supply voltage demod_vcc 3.9 v cw input power 7.0 dbm gnd ic contacts voltage 0.3 v capacitance load at rx_data 10 pf storage temperature t stg -65 to 150 c operating temperature t a 0 to 50 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. meets human body model (hbm) ) 2.0 kv and machine model (mm ) 200 v except rfand limiter circuit contacts. limiter circuit contacts (contacts 19 and 17) = 900 v hbm, 125 v mm. rf contacts = 80 v hbm, 50v mm. rf contacts have no esd protection. additional esd data available upon request. 1/256 lna ? logic interface f ref modulation filter modulation control modulator lna_in_n lpf demod_out_p demod_out_n baseband filter limiter 80 db lna_sw am demod lna_in_p lna_sw 60% data demod_bypass mod_out_n rx_data fref mod_out_p tx_data lna_sw trim_en pll_en tx_en rx_en f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mc13190 rf product device data 3?5 table 2. recommended operating conditions characteristic symbol min typ max unit supply voltage v cc 2.52.753.0 v digital supply v dd 2.02.753.0 v signal and control pins 80% v dd - v dd v demodulator supply voltage (no lna input signal) 2.7 3.1 3.3 v input operating frequency 2.411 - 2.473 ghz maximum input power into lna_in - - 0 dbm differential load impedance for transmitter (mod_out) -50- ? differential source impendance for receiver (lna_in) - 25 - ? transmit data rate (manchester encoded) 4 5 6 mbits/s transmit data encoding manchester, 50% duty cycle table 3. system characteristics (v cc = 2.75 v, t a = 25c, rf receiver frequency = 2.442 ghz, 60% am, bit rate = 5.0 mbps manchester coded, unless otherwise noted.) characteristic symbol min typ max unit receiver sensitivity for 2x10 -4 bit error rate -65 -71 - dbm baseband filter lower corner frequency - 0.35 - mhz baseband filter upper corner frequency - 6.0 - mhz receiver recovery time from a 7.0 dbm burst - - 15 s am modulation depth 50 60 88 % transmit power (modulated) 1.9 4.8 - dbm receive supply current (p in = -50 dbm) i cc -11-ma transmit supply current logic 1 logic 0 50% duty cycle i cc - - 54 27 40.5 - - ma standby supply current - 51 - a f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mc13190 motorola wireless 3?6 rf product device data table 4. receiver section ( v cc = 2.75 v, t a = 25c, rf receiver frequency = 2.442 ghz, 60% am, bit rate = 5.0 mbps manchester coded, unless otherwise noted.) characteristic symbol min typ max unit low noise amplifier and am demodulator current consumption active disabled - - 11 7.0 - - ma a recovered signal level at -65 dbm - 5.0 - mvpp limiter and level shifter current consumption active disabled - - 240 3.0 - - a rx_data drive capability (5.0 mhz) - - 10 pf output high with respect to vdd_rx_data @ -100 a 80% v dd v output low with respect to gnd @ -100 a 0.2 v table 5. transmit section (v cc = 2.75 v, t a = 25c, rf transmit frequency = 2.442 ghz, 60% am, bit rate = 5.0 mbps manchester coded, unless otherwise noted.) characteristic symbol min typ max unit frequency synthesizer (v cc = 2.75 v, t a = 25c, unless otherwise noted.) total current consumption when active active disabled - - 10.2 1.1 - - ma a frequency range (fref x 256) 2.4 - 2.484 ghz reference input frequency f ref 9.375 - 9.704 mhz rf frequency divide ratio n - 256 - trim time (using fixed clock derived from reference) - - 100 s time required to turn on and lock after trim (250 khz loop bandwidth) -25-s reference input level ref low ref high - v dd x 80% - - v dd x 20% - v f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mc13190 rf product device data 3?7 am modulator current consumption active disabled - - 16.4 3.0 - - ma a am modulation depth range 50 60 88 % output power 2.0 4.8 - dbm occupied bandwidth (99% signal energy) - 22 - mhz out of band spurious at antenna port 30 mhz to 1.0 ghz 1.0 to 1.275 ghz 1.8 to 1.9 ghz 5.15 to 5.3 ghz - - - - -45 -40 -45 -50 - - - - dbm acceptable duty cycle for tx_data signal (manchester encoded) 48 - 52 % table 6. enable logic levels (v cc = 2.75 v, t a = 25c) symbol characteristic min max v ih high level input voltage 80% v dd - v il low level input voltage - 20% v dd i ih high level input current - 1.0 a i il low level input current - 1.0 a table 5. transmit section (continued) (v cc = 2.75 v, t a = 25c, rf transmit frequency = 2.442 ghz, 60% am, bit rate = 5.0 mbps manchester coded, unless otherwise noted.) characteristic symbol min typ max unit f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
contact connections mc13190 motorola wireless 3?8 rf product device data 2 contact connections figure 2. contact connections table 7. control contact definitions contact description rx_en enables lna, demod and limiter tx_en enables tx filter, modulation control, pa/modulator pll_en enables frequency synthesizer and vco trim_en enables vco trimming lna_sw switches lna inputs to ground in tx mode 32 31 30 29 28 27 26 25 9 101112 1415 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 mod_vcc mod_buff_vcc pll_vcc tx_data pll_en demod_vcc demod_bypass demod_out_p demod_out_n rx_en lna_vcc logic_vdd tx_en fref lim_vcc rx_data l n a _ i n _ p m o d _ o u t _ p m o d _ o u t _ n l n a _ i n _ n g n d g n d g n d g n d r x _ o u t _ d r v r _ g n d l i m _ g n d _ 2 t r i m _ e n v d d _ r x _ d a t a g n d v c o _ v c c l p f l n a _ s w 13 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?9 3 application information 3.1 introduction the mc13190 is a 2.4 ghz transceiver that takes advantage of am modulation to provide wide-band data capability with simple, low-cost circuitry. the transmit and receive baseband filters are designed for 5 mbps manchester encoded data. this high data rate capability is intended to provide low latency, avoid interference through short-burst protocol and allow for multiple retransmissions. the baseband interface is simple to allow maximum flexibility in applications. depending on protocol choices and bit error rate requirements, the mc13190 is capable of supporting up to 1 mbps data throughput. 3.2 modes of operation the mc13190 has three modes of operation; standby, transmit and receive. refer to figure 1, simplified block diagram, for circuit functions. 3.2.1 standby mode standby mode is automatically initiated when all enable (_en) ic contacts are kept low. the current consumption during standby mode is typically 51 a. 3.2.2 transmit mode in the transmit mode, the vco frequency is set based on the reference by the pll, the transmit chain is enabled, the transmit data is filtered and am-modulates the transmit carrier. this sequence is shown in figure 3. the switches to ground at the input of the lna as well as the pll are enabled ahead of the tx chain. optionally, an external transmit/receive switch can be used and lna_sw can be left low. this delay allows the pll to settle prior to application of data. during power-up of the tx chain, tx_data should be kept low. this guarantees the modulator powers up at minimum output power which will prevent splatter. figure 3. recommended timing during transmit mode it should be noted that the transmit baseband filter is optimized for 5 mbps manchester encoded data. the mc13190 does not provide this encoding. see section 3.6.1 for discussion of manchester encoding. the internal 2.4 ghz vco includes circuitry to perform an automated trimming cycle. in the trim cycle, the vco will trim itself to the required frequency keeping the control voltage within the specified range. after initial trimming, the vco does not require trimming again until the supply voltage and/or the temperature changes. trimming every one to 10 seconds is, however, recommended. the trim cycle timing is shown in figure 4. tx_data no specified time limit 5.0 s tx_en lna_sw, pll_en 25 s 2.0 s 2.0 s 8-bit preamble 5mbps data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mc13190 motorola wireless 3?10 rf product device data figure 4. recommended timing during trim mode the pll is enabled, a delay of 10 s is observed for the vco and the pll to settle, and then trimming is begun. trimming continues until trim_en is taken low and should continue for a minimum of 100 s. after the trim_en is taken low, the trim information is stored internally, a process that takes about 10 s. pll_en must remain high while the trim information is stored. the frequency synthesizer uses a fixed 256 divider and must be enabled in both trim and tx mode. the frequency synthesizer is not required in the receive mode and may be disabled. the frequency synthesizer requires an external reference signal (ic contact 8), fref, and an external loop filter connected to ic contact 13. 3.2.3 receive mode in receive mode, the 2.4 ghz signals from the antenna are amplified by the lna, peak detected in the demodulator and filtered and amplified to produce the rx_data output. the response time after the first time rx_en is pulled high is set by the charging time of the demodulator bypass capacitor and is about 700 s. once the capacitor is charged, internal circuitry maintains the charge for at least one second and the response time is reduced to around 7 s. an 8-bit preamble allows for receive circuitry setting. the receiver baseband filter is optimized for manchester encoded 5 mbps data. the receive sequence is shown in figure 5. figure 5. recommended timing during receive mode 3.3 transmit and receive sequencing figure 6 shows the sequencing and timing for a typical trim, transmit, receive and re-transmit cycle. note that the pll and vco (pll_en) are off during the receive cycle. this sequence can be repeated as often as needed and is controlled by the applications software. the trim cycle should be repeated at regular intervals of 1 to 10 seconds or when the temperature and/or voltage have changed. pll_en trim_en at least 100 s 10 s 10 s rx_data rx_en no specific time limit 5mbps receive data * 8-bit preamble * 700 s for 1 st rx_en 7.0 s thereafter, assuming tx cycle $ 1 sec f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?11 figure 6. transmit/receive timing sequence p l l _ e n t r i m _ e n l n a _ s w t x _ e n t x _ d a t a r x _ e n r x _ d a t a 10 s 100 s 5.0 s 25 s 5.0 s 2.0 s 2.0 s 700 s for 1 st rx_en 7.0 s thereafter, assuming tx cycle $ 1 sec 2.0 s 2.0 s 5.0 s 25 s transmit cycle receive cycle transmit cycle [note] note: lna_sw can be left ?low? if external t/r switch is used. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mc13190 motorola wireless 3?12 rf product device data 3.4 basic transceiver circuit figure 7 shows the basic transceiver evaluation board circuit schematic with reference oscillator and figure 8 shows the optional external lnas. figures 9 and 10 show the evaluation board printed circuit board layout details. this realization is intended for device evaluation and has been designed with a 50 ? interface. c19, c20, l10 and l12 form a lumped-element balun. in equipment applications a differential antenna can be interfaced through matching elements directly to the lna and modulator contacts. a pcb dipole antenna with balun and sma connector is available for link evaluations. the rf circuit layout is critical and should be duplicated exactly. in normal applications, the entire transceiver should be shielded and control lines from the baseband should be as short as possible. the optional external lna circuits require an external differential switch that is implemented with pin diodes d1, d2, d3 and d4. t1 and t2 are quarter wave lines for isolation. ic contact 15, lna_sw, is grounded since the internal switch is not used. if the lna are used, c25 and c30 are not placed and ?zero ohm? resistors r5, r9, r13 and r14 insert the lnas into the receive path. voltage supply contacts 1, 2, 3, 12, 19, 23 and 24 require bypass capacitors as close as possible to the device. logic supply contact 4 can directly interface to the baseband supply in equipment applications. the demod_bypass (contact 22) bypasses the demodulator bias circuitry for both rf signals and low frequency signals. the differential demodulator output from contacts 20 and 21 is available at tp1 and tp2. the pll loop filter is the standard r+c // c network and connects between contacts 12 and 13. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?13 figure 7. transceiver application circuit schematic mc13190 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 * 25 28 29 30 31 32 26 27 16 13 12 11 10 915 14 rf_in 2.7 v 2.7 v c19 l12 c20 l10 r21 c17 c32 tx_en c31 c16 d4 d3 l3 l2 d1 l1 c11 r5 c13 c14 d2 l4 r13 r14 l11 c30 c15 r9 l7 c25 c12 2.7 v r15 c1 2.7 v r16 c33 c21 r2 2.7 v c9 r3 y1 c8 c7 q1 c4 c6 r20 2.7 v r4 c18 c5 r19 c36 connected to via r18 vco_vcc r17 c34 c35 c37 r1 c3 c2 l5 vco_vcc 2.7 v tx_en * backside ground contact soldered to pcb n.c. 2.7 v n.c. 2.7 v t1 t2 tp1 tp2 u1 n.c. jumper c d to optional lna #2 to optional lna #1 a b c38 j5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mc13190 motorola wireless 3?14 rf product device data figure 8. optional lna circuits table 8. bill of materials reference value description c1, c6, c11, c16, c18, c21, c33, c35, c36, c37 0.1 f 0402 ceramic, murata c2 82 pf 0402 npo ceramic, murata c3 12 pf 0402 npo ceramic, murata c4, c23, c27 1000 pf 0402 ceramic, murata c5 1.0 f 0603 ceramic, murata c7, c8 27 pf 0402 npo ceramic, murata c9, c34 100 pf 0402 npo ceramic, murata c10, c13, c14, c29 6.0 pf 0402 npo ceramic, murata c12, c15 3.0 pf 0402 npo ceramic, murata c17 10 pf 0402 npo ceramic, murata c19, c20 1.5 pf 0402 npo ceramic, murata c22, c28 0.5 pf 0402 npo ceramic, murata c24, c26 2.0 pf 0402 npo ceramic, murata c25, c30, c31, c32, c38 33 pf 0402 npo ceramic, murata d1, d2, d3, d4 bar63-03w pin diode, siemans j2, j3, j4 1 x 10 header strip j5 sma right angle l1, l4 2.2 nh 0402 toko l2, l3 15 nh 0402 toko l5 2.7 nh 0603 toko l6, l7, l8, l11 3.0 nh 0402 toko l9, l13 0.5 nh 0402 toko c23 r7 rx_en r6 r8 l6 c24 q2 l13 c10 c22 optional lna #1 a b c29 c28 l9 q3 l8 c26 r10 r12 r11 c27 rx_en optional lna #2 c d f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?15 l10, l12 1.8 nh 0402 toko q1 mmbt3904 q2, q3 mbc13900 r1 12 k ? 0402 5% r2 560 ? 0402 5% r3 68 k ? 0402 5% r4 51 ? 0402 5% r5, r9, r13, r14 0 ? 0402 r6, r12 49 k ? 0402 5% r7, r11 130 ? 0402 5% r16, r17, r18 180 ? 0402 5% r8, r10, r15, r19, r20 10 ? 0402 5% r21 270 ? 0402 5% t1, t2 z 0 = 25 ? , = 0.72 microstrip transmission line, r = 4.5 mils, t = 10 mils u1 mc13190 y1 9.357 mhz temex table 8. bill of materials (continued) reference value description f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mc13190 motorola wireless 3?16 rf product device data figure 9. transceiver circuit pcb topside (active dielectric = 10 mil fr4, total board thickness = 0.062?) 2.25" 2.0" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?17 figure 10. transceiver circuit pcb bottom side (active dielectric = 10 mil fr4, total board thickness = 0.062?) 3.5 baseband interface referring again to figure 1, the simplified block diagram, the baseband interface is accomplished through the logic interface block. tx_data and rx_data provide the data interface. the mc13190 is designed to transmit and receive 5 mbps manchester encoded data. data rates of between 4 and 6 mbps are acceptable. the data pulses should be between 100 and 200 ns duration. the mc13190 does not provide encoding or decoding. the baseband device chosen must be capable of encoding and decoding a 5 mbps data stream. fref can be supplied by the baseband and can be ?warped? or ?dithered? to provide frequency variation. the remaining five control lines are controlled through gpio lines. 3.5.1 low data rate applications for low data rate applications, an alternate approach can be used to employ a low-cost microcontroller. figure 11 shows the basic principals. a motorola mc68hc908gr8 is shown but the same approach can be used with any mcu that is capable of performing the required task. the system reference frequency is chosen to be the 9.537 mhz required for the mc13190?s transmit synthesizer. the reference is also fed to a programmable divider which becomes an fsk generator controlled by the transmit data from the mcu. f1 will be 4.769 mhz while f2 will be 2.384 mhz. these frequencies am modulate the 2.44 ghz carrier as though they were data. on the receive side, rx_data drives a peak detector tuned for f1. f1 therefore 2.25" 2.0" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mc13190 motorola wireless 3?18 rf product device data produces a high output and f2 produces a low output. this recovered data stream is feed to the receive data input of the mcu. fsk, rather than ask, was chosen to keep the baseband limiter compressed and reduce baseband noise. this technique has been shown to work up to 100 kb/s data rate. details are given in motorola application note an1946/d. figure 11. mc13190 interface with hc08 microcontroller for low data rate applications l i m i t e r 8 0 d b a / d s p i m c 6 8 h c 9 0 8 g r 8 m i c r o c o n t r o l l e r 9 . 5 3 7 m h z 1 / 2 5 6 f r e f m o d u l a t o r l n a _ i n _ n l p f m o d _ o u t _ n d e m o d _ o u t _ p d e m o d _ o u t _ n t x _ d a t a f r e f r x _ d a t a b a s e b a n d f i l t e r c o n t r o l l n a l n a _ i n _ p c o n t r o l 6 0 % m o d _ o u t _ p l n a _ s w t r i m _ e n p l l _ e n t x _ e n r x _ e n d a t a d e m o d _ b y p a s s t x _ d a t a r x _ d a t a m a t c h i n g c i r c u i t a m d e m o d p e a k d e t 2 4 s c i g p i o c l o c k m o d u l e m 6 8 h c 0 8 c o r e 8 k f l a s h l o g i c i n t e r f a c e m o d u l a t i o n c o n t r o l m o d u l a t i o n f i l t e r m c 1 3 1 9 0 r f t r a n s c e i v e r f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?19 3.6 protocol considerations 3.6.1 manchester encoding as mentioned earlier, the mc13190 has been designed for use with protocols that employ manchester encoding. the basic principle of this coding technique is that each data bit is encoded as a transition as opposed to a level. this results in two half-bits as shown in figure 12. a data 1 bit is encoded as a high- low transition while a data 0 bit is encoded as a low-high transition. each data bit then has a transition which facilitates data clock recovery. the half-bits are the transmitted and received symbols so each data bit results in two channel symbols. m figure 12. manchester encoding of 5 mbit data at 5 mbps a data bit is 200 ns long. the channel bits are then 100 ns each but because of the encoding algorithm there can be two half-bits in sequence when a data bit transition occurs. this is also the maximum number of half bits that can occur in sequence. although the active filters in the mc13190 transmitter are designed for a specific data rate and manchester encoding, there is nothing to prevent the application from using other rates or encoding in just the transmitter. the transmitter uses slope control and low-pass filtering to control the bandwidth of the baseband signal. these filters assume a 100 ns manchester encoded half-bit with a tightly controlled duty cycle. tx_data is dc-coupled so there is no limit on the length of the data bit. a data 1 or 0 can be maintained indefinitely. if the pulse length at tx_data is much shorter than 100 ns, the slope control will not allow the modulator to peak and the modulation index will decrease. the receive filters are hard-wired for 5 mbps manchester encoded data as shown in figure 12 and cannot be changed by the user. these filters have bandpass response to maximize the performance of the receiver. the receiver is ac-coupled. using manchester encoded data rates outside the range of 4 to 6 mbps will result in less than optimum performance. if the rate is too high or low, the data will fall out of the receiver passband and performance will degrade quickly. 3.6.2 channel considerations the 2.4 ghz band is a noisy environment prone to multipath fading. noise takes many forms but, at 2.4 ghz, microwave ovens and other users predominate. multipath fading occurs when the same signal arrives at the receiver at different times. not only can multipath impact the absolute signal level but it can also result in frequency selective fading and intersymbol interference. the am modulation scheme used in the 1000 11 1 data bits channel bits b = 200 ns = 100 ns b 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information mc13190 motorola wireless 3?20 rf product device data mc13190 makes it susceptible to frequency selective fading through the ?notching? of the carrier causing performance degradation in the envelope detector. these effects cannot be avoided so must be dealt with in protocol design. sufficient margin must be built into the link and redundancy into the protocol to reduce bit error rate to an acceptable level. 3.6.3 packet structure the 5 mbps data rate that the mc13190 supports is high enough to allow multiple users to occupy the same frequency channel using time division multiple access (tdma) techniques. the protocol for implementing the tdma is left up to the system integrator and is heavily dependent on the number of users per unit area, the amount of data to be transmitted per user per unit time and the method used to detect the symbols. the high level frame structure should allow for the total number of users required as well as the number of retransmissions allocated to each user with a guard band between each packet to allow for the timing uncertainty associated with each of the users clocks. the upper bound of the frame structure is determined by the desired data throughput for each user and the latency of the data. if low latency is the primary design goal, a short frame should be used. the packets should be structured to provide for a robust synchronization between the transmitter and the receiver as well as a means to deliver the payload reliably with some level of error detection or correction. the packet should be designed with a preamble of at least 8 bits to allow for transceiver settling, a synchronization code, a header, the payload, and the error detection overhead. a suitable form of error detection could be an n-length crc calculated and appended to the packet. a common method of synchronization used in the industry is to transmit a length of a code that has been designed to provide for fast acquisition of the codeword yet low probability of false detection. the ideal code word has a very low autocorrelation side lobe. that is to say, when the codeword is shifted the correlation value is very low. a barker or neuman-hofman code could be used and are well documented in most digital communication texts. the mc13190 receiver outputs a waveform that has no timing associated with it. in other words, the baseband symbol detector will need to determine the waveform timing in order to make the correct bit decisions on the sampled waveform. since the transmitted date is manchester encoded, it is recommended that the input waveform be at least 8x oversampled so that there are at least 4 samples per half of the waveform. the correlation with the synchronization word should be performed on all samples of the waveform, but it is recommended that the bit decisions be based only on the second half of the manchester encoded waveform since a transition is guaranteed at the middle of each transmitted bit. it should be noted that an artifact of the mc13190 baseband filtering is some corruption of the first half of the manchester encode bit cycle as well. 8x oversampling should provide for adequate timing resolution of the bit edge transitions to insure correct bit decisions if the packet length is not too long. the packet length will be limited primarily by the accuracy of the reference clocks in the system. if the reference source has a guaranteed stability of 50 ppm, then a worst case timing shift will be 100 ppm or up to 20 ps per 200 ns bit. this would limit the packet length to 250 s before the accumulated timing drift will begin to affect the symbol detection. a method of coherent detection could be employed where a tracking loop is implemented if longer packers are desired. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
application information motorola wireless mc13190 rf product device data 3?21 3.7 device characterization information table 9. broadband differential scattering parameters f (ghz) lna rx mode lna tx mode mag mag 0.5 0.866 -17 0.946 -51.5 1.0 0.830 -40.2 0.807 -115.7 1.5 0.655 -69.3 0.736 173.4 2.0 0.440 -110.3 0.784 121.1 2.5 0.340 -176.5 0.845 89.7 3.0 0.478 120 0.889 69.8 3.5 0.640 86.6 0.917 56.1 4.0 0.756 66.4 0.936 46 4.5 0.831 52.5 0.950 38.2 5.0 0.879 42.3 0.959 31.8 5.5 0.910 34.4 0.966 26.5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc144110 ordering information device package mc144110p plastic dip mc144110dw sog package mc144111p plastic dip mc144111dw sog package these devices are not recommended for new design. for the complete data sheet please visit our website at http://www.motorola.com/semiconductors mc144110 motorola wireless 3?22 rf product device data the mc144110 and mc144111 are low-cost 6-bit d/a converters with serial interface ports to provide communication with cmos microprocessors and microcomputers. the mc144110 contains six static d/a converters; the mc144111 contains four converters. due to a unique feature of these dacs, the user is permitted easy scaling of the analog outputs of a system. over a 5 to 15 v supply range, these dacs may be directly interfaced to cmos mpus operating at 5 v. ? direct r-2r network outputs ? buffered emitter-follower outputs ? serial data input ? digital data output facilitates cascading ? direct interface to cmos p ? wide operating voltage range: 4.5 to 15 v ? wide operating temperature range: 0 to 85 5 c ? software information is contained in document m68hc11rm/ad technical data rev. 0, 02/2003 digital-to-analog converters with serial interface f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc145026 ordering information device package mc145026p plastic dip mc145026d sog package mc145027p plastic dip mc145027dw sog package mc145028p plastic dip mc145028dw sog package these devices are not recommended for new design. for the complete data sheet please visit our website at http://www.motorola.com/semiconductors motorola wireless mc145026 rf product device data 3?23 these devices are designed to be used as encoder/decoder pairs in remote control applications. the mc145026 encodes nine lines of information and serially sends this information upon receipt of a transmit enable (te) signal. the nine lines may be encoded with trinary data (low, high, or open) or binary data (low or high). the words are transmitted twice per encoding sequence to increase security. the mc145027 decoder receives the serial stream and interprets five of the trinary digits as an address code. thus, 243 addresses are possible. if binary data is used at the encoder, 32 addresses are possible. the remaining serial information is interpreted as four bits of binary data. the valid transmission (vt) output goes high on the mc145027 when two conditions are met. first, two addresses must be consecutively received (in one encoding sequence) which both match the local address. second, the 4 bits of data must match the last valid data received. the active vt indicates that the information at the data output pins has been updated. the mc145028 decoder treats all nine trinary digits as an address which allows 19,683 codes. if binary data is encoded, 512 codes are possible. the vt output goes high on the mc145028 when two addresses are consecutively received (in one encoding sequence) which both match the local address. ? operating temperature range: - 40 to + 85 c ? very-low standby current for the encoder: 300 na maximum @ 25 c ? interfaces with rf, ultrasonic, or infrared modulators and demodulators ? c oscillator, no crystal required ? igh external component tolerance; can use 5% components technical data rev. 0, 02/2003 encoder and decoder pairs f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc145026 motorola wireless 3?24 rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
4?1 motorola wireless rf product device data frequency synthesis ? data sheets chapter four page device number number pll synthesizers single mc145151?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145152?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145157?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145158?2 4?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mc145170?2 4?4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
4?2 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc145151-2 ordering information device package mc145151p2 plastic dip mc145151dw2 sog package mc145152p2 plastic dip mc145152dw2 sog package mc145157p2 plastic dip mc145157dw2 sog package mc145158p2 plastic dip mc145158dw2 sog package these devices are not recommended for new design. for the complete data sheet please visit our website at http://www.motorola.com/semiconductors motorola wireless mc145151-2 rf product device data 4?3 the devices described in this document are typically used as low-power, phase-locked loop frequency synthesizers. when combined with an external low-pass filter and voltage- controlled oscillator, these devices can provide all the remaining functions for a pll frequency synthesizer operating up to the device's frequency limit. for higher vco frequency operation, a down mixer or a prescaler can be used between the vco and the synthesizer ic. these frequency synthesizer chips can be found in the following and other applications: ?catv ?tv tuning ? am/fm radios ? scanning receivers ? two-way radios ? amateur radio technical data rev. 0, 02/2003 pll frequency synthesizer family f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc145170-2 ordering information device operating temp range package mc145170p2 t a = -40 to 85c plastic dip mc145170d2 sog-16 mc145170dt2 tssop-16 p suffix case 648 dt suffix case 948c d suffix case 751b mc145170-2 motorola wireless 4?4 rf product device data 1 introduction the new mc145170-2 is pin-for-pin compatible with the mc145170-1. a comparison of the two parts is shown in the table below. the mc145170-2 is recommended for new designs and has a more robust power-on reset (por) circuit that is more responsive to momentary power supply interruptions. the two devices are actually the same chip with mask options for the por circuit. the more robust por circuit draws approximately 20 ? random access of the three registers. thus, tuning can be accomplished via a 2-byte serial transfer to the 16-bit n register. the device features fully programmable r and n counters, an amplifier at the f in pin, on-chip support of an external crystal, a programmable reference output, and both single- and double- ended phase detectors with linear transfer functions (no dead zones). a configuration (c) register allows the part to be configured to meet various applications. a patented feature allows the c register to shut off unused outputs, thereby minimizing noise and interference. in order to reduce lock times and prevent erroneous data from being loaded into the counters, a patented jam-load feature is included. whenever a new divide ratio is loaded into the n register, both the n and r counters are jam-loaded with their respective values and begin counting down together. the phase detectors are also initialized during the jam load. ? operating voltage range: 2.7 to 5.5 v technical data mc145170-2/d rev. 4, 02/2003 pll frequency synthesizer with serial interface f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
introduction motorola wireless mc145170-2 rf product device data 4?5 ? maximum operating frequency: 185 mhz @ v in = 500 mvpp, 4.5 v minimum supply 100 mhz @ v in = 500 mvpp, 3.0 v minimum supply ? operating supply current: 0.6 ma @ 3.0 v, 30 mhz 1.5 ma @ 3.0 v, 100 mhz 3.0 ma @ 5.0 v, 50 mhz 5.8 ma @ 5.0 v, 185 mhz ? operating temperature range: -40 to 85 c ? r counter division range: 1 and 5 to 32,767 ? n counter division range: 40 to 65,535 ? direct interface to motorola spi serial data port ? see application notes an1207/d and an1671/d ? contact motorola for mc145170 control software. table 1. comparision of the pll frequency synthesizers parameter mc145170-2 mc145170-1 minimum supply voltage 2.7 v 2.5 v maximum input current, f in 150 a 120 a dynamic characteristics, f in (figure 26) unchanged - power-on reset circuit improved - f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mc145170-2 motorola wireless 4?6 rf product device data figure 1. block diagram 2 electrical characteristics table 2. maximum ratings (voltages referenced to v ss ) parameter symbol value unit dc supply voltage v dd -0.5 to 5.5 v dc input voltage v in -0.5 to v dd + 0.5 v dc output voltage v out -0.5 to v dd + 0.5 v dc input current, per pin i in 10 ma dc output current, per pin i out 20 ma dc supply current, v dd and v ss pins i dd 30 ma power dissipation, per package p d 300 mw storage temperature t stg -65 to 150 c lead temperature, 1 mm from case for 10 seconds t l 260 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics tables or pin descriptions section. 2. esd data available upon request. bitgrabber r register 15 bits lock detector and control bitgrabber c register 8 bits phase/frequency detector a and control por phase/frequency detector b and control bitgrabber n register 16 bits osc shift register and control logic enb osc in d in clk osc out f in 1 2 7 5 4 3 15 16 16 ld pd out f r f v 10 15 14 13 11 9 pin 16 = v dd pin 12 = v ss input amp 6 4-stage reference divider ref out 3 dout 8 f v control f r f v 15-stage r counter f r control 16-stage n counter this device contains 4,800 active transistors. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mc145170-2 rf product device data 4?7 table 3. electrical characteristics (voltages referenced to v ss , t a = -40 to 85 c) parameter test condition symbol v dd v guaranteed limit unit power supply voltage range v dd - 2.7 to 5.5 v maximum low-level input voltage [note 1] (d in , clk, enb , f in ) dc coupling to f in v il 2.7 4.5 5.5 0.54 1.35 1.65 v minimum high-level input voltage [note 1] (d in , clk, enb , f in ) dc coupling to f in v ih 2.7 4.5 5.5 2.16 3.15 3.85 v minimum hysteresis voltage (clk, enb ) v hys 2.7 5.5 0.15 0.20 v maximum low-level output voltage (any output) i out = 20 a v ol 2.7 5.5 0.1 0.1 v minimum high-level output voltage (any output) i out = - 20 a v oh 2.7 5.5 2.6 5.4 v minimum low-level output current (pd out , ref out , f r , f v , ld, r , v ) v out = 0.3 v v out = 0.4 v v out = 0.5 v i ol 2.7 4.5 5.5 0.12 0.36 0.36 ma minimum high-level output current (pd out , ref out , f r , f v , ld, r , v ) v out = 2.4 v v out = 4.1 v v out = 5.0 v i oh 2.7 4.5 5.5 -0.12 -0.36 -0.36 ma minimum low-level output current (d out ) v out = 0.4 v i ol 4.5 1.6 ma minimum high-level output current (d out ) v out = 4.1 v i oh 4.5 -1.6 ma maximum input leakage current (d in , clk, enb , osc in ) v in = v dd or v ss i in 5.5 1.0 a maximum input current (f in ) v in = v dd or v ss i in 5.5 150 a maximum output leakage current (pd out ) (d out ) v in = v dd or v ss , output in high-impedance state i oz 5.5 5.5 100 5.0 na a maximum quiescent supply current v in = v dd or v ss ; outputs open; excluding f in amp input current component i dd 5.5 100 a notes: 1. when dc coupling to the osc in pin is used, the pin must be driven rail-to-rail. in this case, osc out should be floated. 2. the nominal values at 3.0 v are 0.6 ma @ 30 mhz, and 1.5 ma @ 100 mhz. the nominal values at 5.0 v are 3.0 ma @ 50 mhz, and 5.8 ma @ 185 mhz. these are not guaranteed limits. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mc145170-2 motorola wireless 4?8 rf product device data maximum operating supply current f in = 500 mvpp; osc in = 1.0 mhz @ 1.0 vpp; ld, f r , f v , ref out = inactive and no connect; osc out , v , r , pd out = no connect; d in , enb, clk = v dd or v ss i dd - [note 2] ma table 4. ac interface characteristics ( t a = -40 to 85c, c l = 50 pf, input tr = t f = 10 ns, unless otherwise noted.) parameter symbol figure no. v dd v guaranteed limit unit serial data clock frequency (note: refer to clock t w below) f clk 22.7 4.5 5.5 dc to 3.0 dc to 4.0 dc to 4.0 mhz maximum propagation delay, clk to d out t plh , t phl 2, 6 2.7 4.5 5.5 150 85 85 ns maximum disable time, d out active to high impedance t plz , t phz 3, 7 2.7 4.5 5.5 300 200 200 ns access time, d out high impedance to active t pzl , t pzh 3, 7 2.7 4.5 5.5 0 to 200 0 to 100 0 to 100 ns maximum output transition time, d out cl = 50 pf t tlh , t thl 2, 6 2.7 4.5 5.5 150 50 50 ns cl = 200 pf 2, 6 2.7 4.5 5.5 900 150 150 ns maximum input capacitance - d in , enb , clk c in -10pf maximum output capacitance - d out c out -10pf table 3. electrical characteristics (continued) (voltages referenced to v ss , t a = -40 to 85 c) parameter test condition symbol v dd v guaranteed limit unit notes: 1. when dc coupling to the osc in pin is used, the pin must be driven rail-to-rail. in this case, osc out should be floated. 2. the nominal values at 3.0 v are 0.6 ma @ 30 mhz, and 1.5 ma @ 100 mhz. the nominal values at 5.0 v are 3.0 ma @ 50 mhz, and 5.8 ma @ 185 mhz. these are not guaranteed limits. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mc145170-2 rf product device data 4?9 table 5. timing requirements (t a = -40 to 85c, input t r = t f = 10 ns, unless otherwise noted.) parameter symbol figure no. v dd v guaranteed limit unit minimum setup and hold times, d in vs clk t su , t h 42.7 4.5 5.5 55 40 40 ns minimum setup, hold, and recovery times, enb vs clk t su , t h , t rec 52.7 4.5 5.5 135 100 100 ns minimum inactive-high pulse width, enb t w(h) 52.7 4.5 5.5 400 300 300 ns minimum pulse width, clk t w 22.7 4.5 5.5 166 125 125 ns maximum input rise and fall times, clk t r , t f 22.7 4.5 5.5 100 100 100 s f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mc145170-2 motorola wireless 4?10 rf product device data 2.1 switching waveforms figure 2. figure 3. figure 4. figure 5. figure 6. test circuit figure 7. test circuit 10% v dd v ss 1/fclk d out clk 90% 50% 90% 50% 10% t plh t phl t tlh t thl t w t w t f t r enb d out d out 50% v dd v ss 50% t pzh t pzl t plz 50% t phz 10% 90% v dd v ss high impedance high impedance d in clk 50% valid 50% t su t h v dd v ss v dd v ss clk enb 50% t su t h first clk last clk t rec 50% v dd v ss v dd v ss t w(h) * includes all probe and fixture capacitance. test point device under test cl* test point device under test cl* *includes all probe and fixture capacitance. 7.5 k ? connect to v dd when testing t plz and t pzl . connect to v ss when testing t phz and t pzh . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics motorola wireless mc145170-2 rf product device data 4?11 table 6. loop specifications (t a = -40 to 85c) parameter test condition symbol figure no. v dd v guaranteed range unit min max input frequency, f in [note} v in 500 mvpp sine wave, n counter set to divide ratio such that f v 2.0 mhz f82.7 3.0 4.5 5.5 5.0 5.0 25 45 80 100 185 185 mhz input frequency, osc in externally driven with ac-coupled signal v in 1.0 v pp sine wave, osc out = no connect, r counter set to divide ratio such that f r 2 mhz f92.7 3.0 4.5 5.5 1.0* 1.0* 1.0* 1.0* 22 25 30 35 mhz crystal frequency, osc in and osc out c1 30 pf c2 30 pf includes stray capacitance f xtal 11 2.7 3.0 4.5 5.5 2.0 2.0 2.0 2.0 12 12 15 15 mhz output frequency, ref out c l = 30 pf f out 12, 14 2.7 4.5 5.5 dc dc dc - 10 10 mhz operating frequency of the phase detectors f2.7 4.5 5.5 dc dc dc - 2.0 2.0 mhz output pulse width, r , v , and ld f r in phase with f v c l = 50 pf t w 13, 14 2.7 4.5 5.5 - 20 16 - 100 90 ns output transition times, r , v , ld, f r , and f v c l = 50 pf t tlh , t thl 13, 14 2.7 4.5 5.5 - - - - 65 60 ns input capacitance f in osc in c in - - - - - - 7.0 7.0 pf * if lower frequency is desired, use wave shaping or higher amplitude sinusoidal signal in ac-coupled case. also, see figure 25 for dc coupling. figure 8. test circuit, f in sine wave generator 100 pf mc145170-2 test point v+ v dd f in f v v in 50 ? * v ss *characteristic impedance f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical characteristics mc145170-2 motorola wireless 4?12 rf product device data figure 9. test circuit, osc circuitry externally driven [note] figure 10. circuit to eliminate self-oscillation, osc circuitry externally driven [note] note: use the circuit of figure 10 to eliminate self-oscillation of the oscin pin when the mc145170-2 has power applied with no external signal applied at vin. (self-oscillation is not harmful to the mc145170-2 and does not damage the ic.) figure 11. test circuit, osc circuit with crystal figure 12. test circuit figure 13. switching waveform figure 14. test load circuit sine wave generator 50 ? 0.01 f test point v dd osc in f r v in v+ v ss mc145170-2 osc out 5.0 m ? sine wave generator 50 ? 0.01 f test point v dd osc in f r v in v+ v ss mc145170-2 osc out v+ 1.0 m ? no connect 1.0 m ? c1 test point v dd ref out v ss osc in osc out c2 v+ mc145170-2 50% refout 1/f ref out 10% 90% output t tlh t thl 50% t w test point device under test cl* *includes all probe and fixture capacitance. output f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections motorola wireless mc145170-2 rf product device data 4?13 3 pin connections 3.1 digital interface pins d in serial data input (pin 5) the bit stream begins with the most significant bit (msb) and is shifted in on the low-to-high transition of clk. the bit pattern is 1 byte (8 bits) long to access the c or configuration register, 2 bytes (16 bits) to access the n register, or 3 bytes (24 bits) to access the r register. additionally, the r register can be accessed with a 15-bit transfer (see table 7). an optional pattern which resets the device is shown in figure 15. the values in the c, n, and r registers do not change during shifting because the transfer of data to the registers is controlled by enb . the bit stream needs neither address nor steering bits due to the innovative bitgrabber registers. therefore, all bits in the stream are available to be data for the three registers. random access of any register is provided (i.e., the registers may be accessed in any sequence). data is retained in the registers over a supply range of 2.7 to 5.5 v. the formats are shown in figures 15, 16, 17, and 18. d in typically switches near 50% of v dd to maximize noise immunity. this input can be directly interfaced to cmos devices with outputs guaranteed to switch near rail-to-rail. when interfacing to nmos or ttl devices, either a level shifter (mc74hc14a, mc14504b) or pull-up resistor of 1 to 10 k ? must be used. parameters to consider when sizing the resistor are worst-case i ol of the driving device, maximum tolerable power consumption, and maximum data rate. clk serial data clock input (pin 7) low-to-high transitions on clock shift bits available at d in , while high-to-low transitions shift bits from d out . the chip's 16-1/2-stage shift register is static, allowing clock rates down to dc in a continuous or intermittent mode. four to eight clock cycles followed by five clock cycles are needed to reset the device; this is optional. eight clock cycles are required to access the c register. sixteen clock cycles are needed for the n register. either 15 or 24 cycles can be used to access the r register (see table 7 and figures 15, 16, 17, and 18). for cascaded devices, see figures 27 to 34 . clk typically switches near 50% of v dd and has a schmitt-triggered input buffer. slow clk rise and fall times are allowed. see the last paragraph of d in for more information. note: to guarantee proper operation of the power-on reset (por) circuit, the clk pin must be held at the potential of either the v ss or v dd pin during power up. that is, the clk input should not be floated or toggled while the v dd pin is ramping from 0 to at least 2.7 v. if control of the clk pin is not practical during power up, the initialization sequence shown in figure 15 must be used. table 7. register access (msbs are shifted in first, c0, n0, and r0 are the lsbs) number of clocks accessed register bit nomenclature 9 to 13 8 16 15 or 24 other values 32 values > 32 see figure 15 c register n register r register none see figures 27 to 34 (reset) c7, c6, c5, ..., c0 n15, n14, n13, ..., n0 r14, r13, r12, ..., r0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections mc145170-2 motorola wireless 4?14 rf product device data enb active-low enable input (pin 6) this pin is used to activate the serial interface to allow the transfer of data to/from the device. when enb is in an inactive high state, shifting is inhibited, d out is forced to the high-impedance state, and the port is held in the initialized state. to transfer data to the device, enb (which must start inactive high) is taken low, a serial transfer is made via din and clk, and enb is taken back high. the low-to-high transition on enb transfers data to the c, n, or r register depending on the data stream length per table 7. note: transitions on enb must not be attempted while clk is high. this puts the device out of synchronization with the microcontroller. resynchronization occurs when enb is high and clk is low. this input is also schmitt-triggered and switches near 50% of v dd , thereby minimizing the chance of loading erroneous data into the registers. see the last paragraph of d in for more information. d out three-state serial data output (pin 8) data is transferred out of the 16-1/2-stage shift register through dout on the high-to-low transition of clk. this output is a no connect, unless used in one of the manners discussed below. dout could be fed back to an mcu/mpu to perform a wrap-around test of serial data. this could be part of a system check conducted at power up to test the integrity of the system's processor, pc board traces, solder joints, etc. the pin could be monitored at an in-line qa test during board manufacturing. finally, d out facilitates troubleshooting a system and permits cascading devices. 3.2 reference pins osc in /osc out reference oscillator input/output (pins 1, 2) these pins form a reference oscillator when connected to terminals of an external parallel-resonant crystal. frequency-setting capacitors of appropriate values as recommended by the crystal supplier are connected from each pin to ground (up to a maximum of 30 pf each, including stray capacitance). an external feedback resistor of 1.0 to 5.0 m ? is connected directly across the pins to ensure linear operation of the amplifier. the required connections for the components are shown in figure 11. 5 m ? is required across the osc in and osc out pins in the ac-coupled case (see figure 9 or alternate circuit figure 10). osc out is an internal node on the device and should not be used to drive any loads (i.e., osc out is unbuffered). however, the buffered ref out is available to drive external loads. the external signal level must be at least 1 vpp; the maximum frequencies are given in the loop specifications table. these maximum frequencies apply for r counter divide ratios as indicated in the table. for very small ratios, the maximum frequency is limited to the divide ratio times 2 mhz. (reason: the phase/frequency detectors are limited to a maximum input frequency of 2 mhz.) if an external source is available which swings virtually rail-to-rail (v dd to v ss ), then dc coupling can be used. in the dc-coupled case, no external feedback resistor is needed. osc out must be a no connect to avoid loading an internal node on the device, as noted above. for frequencies below 1 mhz, dc coupling must be used. the r counter is a static counter and may be operated down to dc. however, wave shaping by a cmos buffer may be required to ensure fast rise and fall times into the osc in pin. see figure 25. each rising edge on the osc in pin causes the r counter to decrement by one. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections motorola wireless mc145170-2 rf product device data 4?15 ref out reference frequency output (pin 3) this output is the buffered output of the crystal-generated reference frequency or externally provided reference source. this output may be enabled, disabled, or scaled via bits in the c register (see figure 16). ref out can be used to drive a microprocessor clock input, thereby saving a crystal. upon power up, the on- chip power-on-initialize circuit forces ref out to the osc in divided-by-8 mode. ref out is capable of operation to 10 mhz; see the loop specifications table. therefore, divide values for the reference divider are restricted to two or higher for osc in frequencies above 10 mhz. if unused, the pin should be floated and should be disabled via the c register to minimize dynamic power consumption and electromagnetic interference (emi). 3.3 counter output pins f r r counter output (pin 9) this signal is the buffered output of the 15-stage r counter. f r can be enabled or disabled via the c register (patented). the output is disabled (static low logic level) upon power up. if unused, the output should be left disabled and unconnected to minimize interference with external circuitry. the f r signal can be used to verify the r counter's divide ratio. this ratio extends from 5 to 32,767 and is determined by the binary value loaded into the r register. also, direct access to the phase detector via the osc in pin is allowed by choosing a divide value of 1 (see figure 17). the maximum frequency which the phase detectors operate is 2 mhz. therefore, the frequency of f r must not exceed 2 mhz. when activated, the f r signal appears as normally low and pulses high. the pulse width is 4.5 cycles of the osc in pin signal, except when a divide ratio of 1 is selected. when 1 is selected, the osc in signal is buffered and appears at the f r pin. f v n counter output (pin 10) this signal is the buffered output of the 16-stage n counter. f v can be enabled or disabled via the c register (patented). the output is disabled (static low logic level) upon power up. if unused, the output should be left disabled and unconnected to minimize interference with external circuitry. the f v signal can be used to verify the n counter's divide ratio. this ratio extends from 40 to 65,535 and is determined by the binary value loaded into the n register. the maximum frequency which the phase detectors operate is 2 mhz. therefore, the frequency of f v must not exceed 2 mhz. when activated, the f v signal appears as normally low and pulses high. 3.4 loop pins f in frequency input (pin 4) this pin is a frequency input from the vco. this pin feeds the on-chip amplifier which drives the n counter. this signal is normally sourced from an external voltage-controlled oscillator (vco), and is ac- coupled into f in . a 100 pf coupling capacitor is used for measurement purposes and is the minimum size recommended for applications (see figure 25). the frequency capability of this input is dependent on the supply voltage as listed in table 6, loop specifications. for small divide ratios, the maximum frequency is limited to the divide ratio times 2 mhz. (reason: the phase/frequency detectors are limited to a maximum frequency of 2 mhz.) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections mc145170-2 motorola wireless 4?16 rf product device data for signals which swing from at least the v il to v ih levels listed in the electrical characteristics table, dc coupling may be used. also, for low frequency signals (less than the minimum frequencies shown in the loop specifications table), dc coupling is a requirement. the n counter is a static counter and may be operated down to dc. however, wave shaping by a cmos buffer may be required to ensure fast rise and fall times into the f in pin. see figure 25. each rising edge on the f in pin causes the n counter to decrement by 1. pd out single-ended phase/frequency detector output (pin 13) this is a three-state output for use as a loop error signal when combined with an external low-pass filter. through use of a motorola patented technique, the detector's dead zone has been eliminated. therefore, the phase/frequency detector is characterized by a linear transfer function. the operation of the phase/ frequency detector is described below and is shown in figure 19. pol bit (c7) in the c register = low (see figure 16) frequency of f v > f r or phase of f v leading f r : negative pulses from high impedance frequency of f v < f r or phase of f v lagging f r : positive pulses from high impedance frequency and phase of f v = f r : essentially high-impedance state; voltage at pin determined by loop filter pol bit (c7) = high frequency of f v > f r or phase of f v leading f r : positive pulses from high impedance frequency of f v < f r or phase of f v lagging f r : negative pulses from high impedance frequency and phase of f v = f r : essentially high-impedance state; voltage at pin determined by loop filter this output can be enabled, disabled, and inverted via the c register. if desired, pd out can be forced to the high-impedance state by utilization of the disable feature in the c register (patented). r and v double-ended phase/frequency detector outputs (pins 14, 15) these outputs can be combined externally to generate a loop error signal. through use of a motorola patented technique, the detector's dead zone has been eliminated. therefore, the phase/frequency detector is characterized by a linear transfer function. the operation of the phase/frequency detector is described below and is shown in figure 19. pol bit (c7) in the c register = low (see figure 16) frequency of f v > f r or phase of f v leading f r : v = negative pulses, r = essentially high frequency of f v < f r or phase of f v lagging f r : v = essentially high, r = negative pulses frequency and phase of f v = f r : v and r remain essentially high, except for a small minimum time period when both pulse low in phase pol bit (c7) = high frequency of f v > f r or phase of f v leading f r : r = negative pulses, v = essentially high frequency of f v < f r or phase of f v lagging f r : r = essentially high, v = negative pulses frequency and phase of f v = f r : v and r remain essentially high, except for a small minimum time period when both pulse low in phase these outputs can be enabled, disabled, and interchanged via the c register (patented). f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections motorola wireless mc145170-2 rf product device data 4?17 ld lock detector output (pin 11) this output is essentially at a high level with narrow low-going pulses when the loop is locked (f r and f v of the same phase and frequency). the output pulses low when f v and f r are out of phase or different frequencies (see figure 19). this output can be enabled and disabled via the c register (patented). upon power up, on-chip initialization circuitry disables ld to a static low logic level to prevent a false ?lock? signal. if unused, ld should be disabled and left open. 3.5 power supply v dd most positive supply potential (pin 16) this pin may range from 2.7 to 5.5 v with respect to v ss . for optimum performance, v dd should be bypassed to v ss using low-inductance capacitor(s) mounted very close to the device. lead lengths on the capacitor(s) should be minimized. (the very fast switching speed of the device causes current spikes on the power leads.) v ss most negative supply potential (pin 12) this pin is usually ground. for measurement purposes, the v ss pin is tied to a ground plane. figure 15. reset sequence enb clk d in power up 123 4 or more clocks 5 1234 don't cares don't cares one zeroes zero note: this initialization sequence is usually not necessary because the on-chip power-on reset circuit performs the initialization function. however, this initialization sequence must be used immediately after power up if control of the clk pin is not possible. that is, if clk (pin 7) toggl es or floats upon power up, use the above sequence to reset the device. also, use this sequence if powe r is momentarily interrupted such that the supply voltage to the device is reduced to below 2.7 v, but not down to at least 1 v (for example, the supply drops down to 2 v). this is necessary because the on-chip power-on reset is only activat ed when the supply ramps up from a voltage below approximately 1.0 v. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections mc145170-2 motorola wireless 4?18 rf product device data figure 16. c register access and format (8 clock cycles are used) enb clk d in msb lsb c7 c6 c5 c4 c3 c2 c1 c0 1 234 5678 * * at this point, the new byte is transferred to the c register and stored. no other registers are affected. c7 - pol: select the output polarity of the phase/frequency detectors. when set high, this bit inverts pd out and interchanges the r function with v as depicted in figure 19. also see the phase detector output pin descriptions for more information. this bit is cleared low at power up. c6 - pda/b: selects which phase/frequency detector is to be used. when set high, enables the output of phase/frequency detector a (pd out ) and disables phase/frequency detector b by forcing r and v to the static high state. when cleared low, phase/frequency detector b is enabled ( r and v ) and phase/frequency detector a is disabled with pd out forced to the high-impedance state. this bit is cleared low at power up. c5 - lde: enables the lock detector output when set high. when the bit is cleared low, the ld output is forced to a static low level. this bit is cleared low at power up. c4 - c2, osc2 - osc0: reference output controls which determines the ref out characteristics as shown below. upon power up, the bits are initialized such that osc in /8 is selected. c1 - f v e: enables the f v output when set high. when cleared low, the f v output is forced to a static low level. the bit is cleared low upon power up. c0 - f r e: enables the f r output when set high. when cleared low, the f r output is forced to a static low level. the bit is cleared low upon power up. c4 c3 c2 ref out frequency 0 0 0 dc (static low) 001osc in 010osc in /2 011osc in /4 100osc in /8 (por default) 101osc in /16 110osc in /8 111osc in /16 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections motorola wireless mc145170-2 rf product device data 4?19 figure 17. r register access and formats (either 24 or 15 clock cycles can be used) x x x x x x x x r 1 4 r 1 3 r 1 2 r 1 1 r 1 0 r 9 r 8 r 7 r 6 r 5 r 4 r 3 r 2 r 1 r 0 x 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4 1 m s b l s b 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 2 3 4 5 6 7 n o t a l l o w e d r c o u n t e r = 1 ( d i r e c t a c c e s s t o r e f e r e n c e s i d e o f p h a s e / f r e q u e n c y d e t e c t o r ) n o t a l l o w e d n o t a l l o w e d n o t a l l o w e d r c o u n t e r = 5 r c o u n t e r = 6 r c o u n t e r = 7 . . . f f . . . f f . . . e f r c o u n t e r = 3 2 , 7 6 6 r c o u n t e r = 3 2 , 7 6 7 h e x a d e c i m a l v a l u e c l k d i n 0 0 0 0 0 0 0 0 . . . 7 7 d o n ' t c a r e b i t s s e e b e l o w s e e b e l o w s e e b e l o w s e e b e l o w r 1 4 r 1 3 r 1 2 r 1 1 r 1 0 r 9 r 8 r 7 r 6 r 5 r 4 r 3 r 2 r 1 r 0 l s b 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 m s b o c t a l v a l u e d e c i m a l e q u i v a l e n t e n b c l k d i n * * * a t t h i s p o i n t , t h e n e w d a t a i s t r a n s f e r r e d t o t h e r r e g i s t e r a n d s t o r e d . n o o t h e r r e g i s t e r s a r e a f f e c t e d . e n b f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
pin connections mc145170-2 motorola wireless 4?20 rf product device data figure 18. n register access and format (16 clock cycles are used) figure 19. phase/frequency detector and lock detector output waveforms enb clk d in 12345678 msb lsb n10n9n8n7n6n5n4n3n2n1n0 n11 n12 n13 n14 n15 9 10111213141516 0 0 0 0 0 0 0 0 0 0 0 f f 0 0 0 0 2 2 2 2 2 2 2 f f 0 1 2 3 5 6 7 8 9 a b e f not allowed not allowed not allowed not allowed not allowed not allowed not allowed n counter = 40 n counter = 41 n counter = 42 n counter = 43 n counter = 65,534 n counter = 65,535 hexadecimal value 0 0 0 0 0 0 0 0 0 0 0 f f decimal equivalent * . . . . . . . . .. .. . . . . . . . . .. .. *at this point, the two new bytes are trans ferred to the n register and stored. no ot her registers are affected. in addition, t he n and r counters are jam-loaded and begin counting down together. f r reference osc in r f v feedback (f in n pd out r v ld v h v l v h v h v h v l high impedance v h v l v l v l v h v l * v h = high voltage level v l = low voltage level *at this point, when both f r and f v are in phase, both the sinking and sourcing output fets are turned on for a very short internal. note: the pd out generates error pulses during out-of-lock conditions. when locked in phase and frequency, the output is high impedance and the voltage at that pin is determi ned by the low-pass filter capacitor. pdout, r and v are shown with the polarity bit (pol) = low; see figure 16 for pol. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations motorola wireless mc145170-2 rf product device data 4?21 4 design considerations 4.1 crystal oscillator considerations the following options may be considered to provide a reference frequency to motorola's cmos frequency synthesizers. 4.1.1 use of a hybrid crystal oscillator commercially available temperature-compensated crystal oscillators (tcxos) or crystal-controlled data clock oscillators provide very stable reference frequencies. an oscillator capable of cmos logic levels at the output may be direct or dc coupled to osc in . if the oscillator does not have cmos logic levels on the outputs, capacitive or ac coupling to osc in may be used (see figures 9 and 10). for additional information about tcxos, visit motorola.com on the world wide web. 4.1.2 use of the on-chip oscillator circuitry the on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. a fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in figure 20. the crystal should be specified for a loading capacitance (c l ) which does not exceed 20 pf when used at the highest operating frequencies listed in table 6, loop specifications . larger c l values are possible for lower frequencies. assuming r1 = 0 ? , the shunt load capacitance (c l ) presented across the crystal can be estimated to be: where c in = 5.0 pf (see figure 21) c out = 6.0 pf (see figure 21) c a = 1.0 pf (see figure 21) c1 and c2 = external capacitors (see figure 21) c stray = the total equivalent external circuit stray capacitance appearing across the crystal terminals the oscillator can be ?trimmed? on-frequency by making a portion or all of c1 variable. the crystal and associated components must be located as close as possible to the osc in and osc out pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. circuit stray capacitance can also be handled by adding the appropriate stray value to the values for c in and c out . for this approach, the term c stray becomes 0 in the above expression for c l . a good design practice is to pick a small value for c1, such as 5 to 10 pf. next, c2 is calculated. c1 < c2 results in a more robust circuit for start-up and is more tolerant of crystal parameter variations. power is dissipated in the effective series resistance of the crystal, r e , in figure 22. the maximum drive level specified by the crystal manufacturer represents the maximum stress that the crystal can withstand without damage or excessive shift in operating frequency. r1 in figure 20. limits the drive level. the use of r1 is not necessary in most cases. c l c in c out c in c out + ----------------------------- c a c stray c1 c2 c1 c2 + ---------------------- ++ + = f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations mc145170-2 motorola wireless 4?22 rf product device data to verify that the maximum dc supply voltage does not cause the crystal to be overdriven, monitor the output frequency at the ref out pin (osc out is not used because loading impacts the oscillator). the frequency should increase very slightly as the dc supply voltage is increased. an overdriven crystal decreases in frequency or becomes unstable with an increase in supply voltage. the operating supply voltage must be reduced or r1 must be increased in value if the overdriven condition exists. the user should note that the oscillator start-up time is proportional to the value of r1. through the process of supplying crystals for use with cmos inverters, many crystal manufacturers have developed expertise in cmos oscillator design with crystals. discussions with such manufacturers can prove very helpful (see table 8). figure 20. pierce crystal oscillator circuit figure 21. parasitic capacitances of the amplifier and c stray figure 22. equivalent crystal networks r1* c2 c1 frequency synthesizer osc out osc in r f * may be needed in certain cases. see text. 5.0 to 10 pf c in c out c a osc in osc out c stray 2 1 2 1 2 1 rs ls cs re xe co note: values are supplied by crystal manufacturer (parallel resonant crystal). f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations motorola wireless mc145170-2 rf product device data 4?23 recommended reading technical note tn-24, statek corp. technical note tn-7, statek corp. e. hafner, ?the piezoelectric crystal unit-definitions and method of measurement?, proc. ieee, vol. 57, no. 2, feb. 1969. d. kemper, l. rosine, ?quartz crystals for frequency control?, electro-technology , june 1969. p. j. ottowitz, ?a guide to crystal selection?, electronic design , may 1966. d. babin, ?designing crystal oscillators?, machine design , march 7, 1985. d. babin, ?guidelines for crystal oscillator design?, machine design , april 25, 1985. contact motorola for mc145170-2 control software. table 8. partial list of crystal manufacturers cts corp. united states crystal corp. crystek crystal statek corp. fox electronics note: motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of crystal manufacturers. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations mc145170-2 motorola wireless 4?24 rf product device data figure 23. phase-locked loop - low pass filter design c vco pd out r 1 c vco r 2 pd out r 1 a c r 2 c vco r v r 1 - + mc33077 or equivalent (note 3) r 1 r 2 (a) (b) (c) n k k vco nr 1 c ------------------------- = n n 2k k vco ----------------------------- - = fs () 1 r 1 sc 1 + ------------------------- - = n k k vco nc r 1 r 2 + () ------------------------------------ = 0.5 n r 2 c n k k vco ------------------------- + "# $% &' = fs () r 2 sc 1 + r 1 r 2 + () sc 1 + -------------------------------------------- - = n k k vco ncr 1 ------------------------- = n r 2 c 2 -------------------- = fs () r 2 sc 1 + r 1 sc ------------------------- - = notes: 1. for (c), r 1 is frequently split into two series resistors; each resistor is equal to r 1 divided by 2. a capacitor c c is then placed from the midpoint to ground to further filter the error pulses. the value of c c should be such that the corner frequency of this network does not significantly affect n . 2. the r and v outputs swing rail-to-rail. therefore, the user should be careful not to exceed the common mode input range of the op amp. 3. for the latest information on mc33077 or equivalent, see the motorola ic web site at http://www.motorola.com/semiconductors . denifitions: n = total division ratio in feedback loop k (phase detector gain) = vdd/4p volts per radian for pdout k (phase detector gain) - vdd/2p volts per radian for fv and fr for a nominal design starting point, the user might consider a damping factor = 0.7 and a natural loop frequency n = (2 f r /50) where f r is the frequency at the phase detector input. larger n values result in faster loop lock times and, for similar sideband filtering, higher f r -related vco standards. k vco vco gain () 2 ? f vco ? v vco -------------------------- = f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations motorola wireless mc145170-2 rf product device data 4?25 figure 24. example application mcu threshold detector osc in v dd f in osc out v r v ss f r ld enb 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 vhf output buffer optional ref d in d out pd out v+ integrator vhf vco low-pass filter v+ optional loop error signals (note 1) m c 1 4 5 1 7 0 - 2 clk f v optional (note 5) (note 4) notes: 1. the r and v outputs are fed to an external combiner/l oop filter. see the phase-locked loop ? low-pass filter design page for additional information. the r and v outputs swing rail-to-rail. therefore, the user should be careful not to exceed the common mode input range of the op amp used inthe combiner/loop filter. 2. for optimum performance, bypass the v dd pin to v ss (gnd) with one or more low-inductance capacitors. 3. the r counter is programmed for a divide value = osc in /f r . typically, f r is the tuning resolution required for the vco. also, the vco frequency divided by f r = n, wher e n is the divide value of the n counter. 4. may be an r-c low-pass filter. 5. may be a bipolar transistor. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations mc145170-2 motorola wireless 4?26 rf product device data figure 25. low frequency operation using dc coupling osc in f in osc out v ss v+ c d a b no connect mc74hc14a mc145170-2 v dd 2 4 1 3 14 7 note: the signals at points a and b may be low-frequency sinusoidal or square waves with slow edge rates or noisy signal edges. at points c and d, the signals are cleaned up, have sharp edge rates, and rail-to-rail signal swings. with signals as described at points c and d, the mc145170-2 is guaranteed to operate down to a frequency as low as dc. refer to the mc74hc14a data sheet for input switching levels and hysteresis voltage range. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations motorola wireless mc145170-2 rf product device data 4?27 figure 26. input impedance at f in - series format (r + jx) (5.0 mhz to 185 mhz) figure 27. cascading two mc145170-2 devices 4 3 2 1 f in (pin 4) sog package marker frequency (mhz) resistance ( ? ) reactance ( ? ) capacitance (pf) 1 5 2390 -5900 5.39 2 100 39.2 -347 4.58 3 150 25.8 -237 4.48 4 185 42.6 -180 4.79 device #1 mc145170-2 cmos mcu optional d out enb clk d in device #2 mc145170-2 enb clk d in d out 33 k ? note 1 notes: 1. the 33 k ? resistor is needed to prevent the d in pin from floating. (the d out pin is a three-state output.) 2. see related figures 28 , 29 , and 30. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
m c 1 4 5 1 7 0 - 2 m o t o r o l a w i r e l e s s 4 ? 2 8 r f p r o d u c t d e v i c e d a t a figure 28. accessing the c registers of two cascaded mc145170-2 devices figure 29. accessing the r registers of two cascaded mc145170-2 devices note: at this point, the new data is transferred to the c regist ers of both devices and stored. no other registers are affected . 1 2 7 8 9 1 0 1 5 1 6 1 7 1 8 2 3 2 4 2 5 2 6 3 1 3 2 3 3 3 4 3 9 4 0 c r e g i s t e r b i t s o f d e v i c e # 2 i n f i g u r e 2 7 c r e g i s t e r b i t s o f d e v i c e # 1 i n f i g u r e 2 7 x x x x x x c 7 c 6 c 0 x x x c 7 c 6 c 0 e n b c l k d i n n o t e note: at this point, the new data is transferred to the r regist ers of both devices and stored. no other registers are affected . e n b c l k d i n 1 2 8 9 1 0 2 5 2 6 2 7 3 0 3 1 3 9 4 0 4 1 4 2 4 4 4 5 r r e g i s t e r b i t s o f d e v i c e # 2 i n f i g u r e 2 7 r r e g i s t e r b i t s o f d e v i c e # 1 i n f i g u r e 2 7 x x x x r 1 4 r 1 3 x r 1 4 r 1 1 4 8 4 9 5 0 5 5 5 6 r 7 r 6 r 0 r 0 r 1 r 9 n o t e f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations motorola wireless mc145170-2 rf product device data 4?29 figure 30. accessing the n registers of two cascaded mc145170-2 devices note: at this point, the new data is transferred to the n regist ers of both devices and stored. no other registers are affected . 1 2 8 9 1 0 1 5 1 6 1 7 2 3 2 4 2 5 3 1 3 2 3 3 n r e g i s t e r b i t s o f d e v i c e # 2 i n f i g u r e 2 7 n r e g i s t e r b i t s o f d e v i c e # 1 i n f i g u r e 2 7 x x x x x n 1 5 n 8 n 7 n 0 n 1 5 3 9 4 0 4 1 4 7 4 8 n 8 n 7 n 0 e n b c l k d i n n o t e f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
design considerations mc145170-2 motorola wireless 4?30 rf product device data figure 31. cascading two different device types v dd device #1 mc145170-2 cmos mcu optional d out enb clk d in device #2 note 2 enb clk d in output a (d out ) 33 k ? note 1 v pd v pd v cc v dd v+ notes: 1. the 33 k ? resistor is needed to prevent the d in pin from floating. (the d out pin is a three-state output.) 2. this pll frequency synthesizer may be a mc145190, mc145191, mc145192, mc145200, or mc145201. 3. see related figures 32, 33, and 34. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
d e s i g n c o n s i d e r a t i o n s m o t o r o l a w i r e l e s s m c 1 4 5 1 7 0 - 2 r f p r o d u c t d e v i c e d a t a 4 ? 3 1 figure 32. accessing the c registers of two different device types figure 33. accessing the a and r registers of two different device types note: at this point, the new data is transferred to the c regist ers of both devices and stored. no other registers are affected . 1 2 7 8 9 1 0 1 5 1 6 1 7 1 8 2 3 2 4 2 5 2 6 3 1 3 2 3 3 3 4 3 9 4 0 c r e g i s t e r b i t s o f d e v i c e # 2 i n f i g u r e 3 1 c r e g i s t e r b i t s o f d e v i c e # 1 i n f i g u r e 3 1 x x x x x x c 7 c 6 c 0 x x x c 7 c 6 c 0 e n b c l k d i n n o t e note: at this point, the new data is transferred to the a register of device #2 and r register of device #1 and stored. no othe r registers are affected. e n b c l k d i n 1 2 1 6 1 7 1 8 2 0 2 1 2 2 3 0 3 1 3 2 3 9 4 0 4 1 4 2 4 3 a r e g i s t e r b i t s o f d e v i c e # 2 i n f i g u r e 3 1 r r e g i s t e r b i t s o f d e v i c e # 1 i n f i g u r e 3 1 x x a 2 3 a 2 2 a 1 9 a 1 8 a 0 x 4 6 4 7 4 8 5 5 5 6 r 9 r 8 r 0 a 8 r 1 4 r 1 3 a 9 n o t e f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mc145170-2 motorola wireless 4?32 rf product device data figure 34. accessing the r and n registers of two different device types note: at this point, the new data is transferred to the r register of device #2 and n register of device #1 and stored. no othe r registers are affected. 1 2 8 9 1 0 1 5 1 6 1 7 2 3 2 4 2 5 3 1 3 2 3 3 r r e g i s t e r b i t s o f d e v i c e # 2 i n f i g u r e 3 1 n r e g i s t e r b i t s o f d e v i c e # 1 i n f i g u r e 3 1 x x x x x r 1 5 r 8 r 7 r 0 n 1 5 3 9 4 0 4 1 4 7 4 8 n 8 n 7 n 0 e n b c l k d i n n o t e f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?1 motorola wireless rf product device data motorola rf transistors ? data sheets chapter five page device number number mbc13900 5?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf281sr1 5?26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf281zr1 5?26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf282sr1 5?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf282zr1 5?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf284r1 5?37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf284lsr1 5?37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf372 5?46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf373ar1 5?57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf373alsr1 5?57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf374a 5?62 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1511t1 5?72 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1513t1 5?82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1517t1 5?94 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1518t1 5?106 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1535t1 5?118 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1535ft1 5?118 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1550t1 5?128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1550ft1 5?128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1570t1 5?137 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf1570ft1 5?137 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf6522?70 5?151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf6522?70r3 5?151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9002r2 5?158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030r1 5?165 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030lsr1 5?165 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030mr1 5?172 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9030mbr1 5?172 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045r1 5?180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045lsr1 5?180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045mr1 5?186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9045mbr1 5?186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060r1 5?194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060lsr1 5?194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060mr1 5?202 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9060mbr1 5?202 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080r3 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9080sr3 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page device number number mrf9080lsr3 5?210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085r3 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085sr3 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9085lsr3 5?218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9100 5?224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9100r3 5?224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9100sr3 5?224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9120 5?233 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9120s 5?233 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9130l 5?241 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9130lr3 5?241 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9130lsr3 5?241 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9135l 5?248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9135lr3 5?248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9135lsr3 5?248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9180 5?255 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf9180s 5?255 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030ar3 5?263 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030asr3 5?263 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030br3 5?268 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18030bsr3 5?268 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060a 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060ar3 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060alsr3 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060asr3 5?273 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060b 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060br3 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060blsr3 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18060bsr3 5?279 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085a 5?285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085ar3 5?285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085alsr3 5?285 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085b 5?290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085br3 5?290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18085blsr3 5?290 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090a 5?297 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090as 5?297 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf18090b 5?303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?2 motorola wireless rf product device data page device number number mrf18090bs 5?303 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19030r3 5?309 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19030sr3 5?309 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19045r3 5?314 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19045sr3 5?314 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19060 5?321 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19060r3 5?321 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19060sr3 5?321 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085r3 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085sr3 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19085lsr3 5?327 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19090 5?335 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19090s 5?335 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19090sr3 5?335 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19120 5?341 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19120s 5?341 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19125 5?348 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19125s 5?348 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf19125sr3 5?348 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21010r1 5?356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21010lsr1 5?356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21030r3 5?362 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21030sr3 5?362 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21045r3 5?367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21045sr3 5?367 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21060 5?375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21060r3 5?375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page device number number mrf21060sr3 5?375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085r3 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085sr3 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21085lsr3 5?381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21090l 5?389 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21090lr3 5?389 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21090lsr3 5?389 . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21090 5?396 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21090s 5?396 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21120 5?401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21125 5?408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21125s 5?408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21125sr3 5?408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21130 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21130r3 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21130s 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21130sr3 5?415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21150 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21150r3 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21150s 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5s21150sr3 5?422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf5p21180 5?429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21180 5?436 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrf21180s 5?436 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfg35003m6t1 5?444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfg35010 5?451 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mrfg35010mt1 5?459 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mbc13900 ordering information device marking package mbc13900t1 900 sot-343 package information plastic package case 318m (sot-343) (scale 2:1) motorola wireless mbc13900 rf product device data 5?3 the mbc13900 is a high performance transistor fabricated using motorola?s 15 ghz f bipolar ic process. it is housed in the 4-lead sc-70 (sot-343) surface mount plastic package resulting in a parasitic effect reduction and rf performance enhancements. the high performance at low power makes the mbc13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. ? low noise figure, nf min = 0.8 db (typ) @ 0.9 ghz, 2.0 v and 5.0 ma ? maximum stable gain, 22 db @ 0.9 ghz, 2.0 v and 5.0 ma ? output third order intercept, oip3 = 18 dbm (typ) @ 2.0 v and 5.0 ma ? ultra small sot-343 surface mount package ? available only in tape and reel packaging figure 1. pin connections 4 1 3 2 base emitter collector emitter technical data mbc13900/d rev. 0, 06/2002 npn silicon low noise transistor f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications mbc13900 motorola wireless 5?4 rf product device data 1 electrical specifications table 1. maximum ratings rating symbol value unit collector-emitter voltage v ceo 6.5 vdc collector-base voltage v cbo 8.0 vdc emitter-base voltage v ebo 3.0 vdc power dissipation @ t c = 75c derate linearity above t c = 75c at p d(max) 0.188 2.5 w mw/c collector current-continuous i c 20 ma maximum junction temperature t j(max) 150 c storage temperature t stg -55 to 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 400 v and machine model (mm) 50 v. additional esd data available upon request. table 2. thermal characteristic characteristic symbol max unit thermal resistance, junction-to-case r jc 400 c/w notes: to calculate the junction termpature use t j = (p d x r jc ) + t c . the case temperature measured on collector lead adjacent to the package body. table 3. electrical characteristics characteristic symbol min typ max unit off characteristic [note 1] collector-emitter breakdown voltage (i c = 0.1 ma, i b = 0) v (br)ceo 6.5 7.5 - vdc collector-base breakdown voltage (i c = 0.1 ma, i e = 0) v (br)cbo 8.0 12 - vdc emitter-base breakdown voltage (i e = 0.1 ma, i c = 0) v (br)ebo 3.0 4.0 - vdc collector cutoff current (v cb = 7.0 v, i e = 0) i cbo --0.1 a emitter cutoff current (v eb = 2.0 v, i c = 0) i ebo --0.1 a base cutoff current (v ce = 5.0 v, i b = 0) i ceo --0.1 a on characteristic [note 1] dc current gain (v ce = 2.0 v, i c = 5.0 ma) h fe 100 - 200 - f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
electrical specifications motorola wireless mbc13900 rf product device data 5?5 dynamic characteristics current gain bandwidth product (v ce = 2.0 v, i c = 15 ma, f = 0.9 ghz) f -15-ghz performance characteristic insertion gain v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz |s 21 | 2 18.5 13.5 16.5 12.5 19.5 14.5 17.5 13.5 - - - - db maximum stable gain and/or maximum available gain [note 2] v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz msg, mag 22 18 21 17.5 23 19 22 18.5 - - - - db minimum noise figure v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz nf min - - - - 0.8 0.9 0.8 0.9 0.9 1.1 0.9 1.1 db associated gain at minimum noise figure v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz g nf - - - - 22 16 21 15 - - - - db output third order intercept [note 3] (v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz) (v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz) (v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz) (v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz) oip3 - - - - 18 21 13.5 19 - - - - dbm notes: 1. pulse width 300 s, duty cycle 2% pulsed. 2. maximum available gain and maximum stable gain are defined by the k factor as follows: , if k > 1, , if k < 1 3. z in and z out matched for optimum ip3. table 3. electrical characteristics (continued) characteristic symbol min typ max unit mag s 21 s 12 ---------- k k 2 1 ? ?? ?? = msg s 21 s 12 ---------- = f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mbc13900 motorola wireless 5?6 rf product device data 2 typical performance characteristics figure 2. capacitance versus voltage figure 3. h fe , dc current gain versu s collector current figure 4. gain-bandwidth product versus collector current v cb , reverse voltage (v) 4.0 3.5 2.5 1.5 1.0 0 0.35 0.2 0.15 0 0.05 0.3 c, capacitance (pf) c ob c cb f = 1.0 mhz 0.5 2.0 3.0 0.1 0.25 162 2.0 v 3.0 v 160 158 156 154 152 150 148 h fe , dc current gain i c , collector current (ma) 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 20 2.0 16 0 2.0 v i c , collector current (ma) 3.0 v 14 12 10 8.0 6.0 4.0 2.0 4.0 6.0 8.0 10 12 14 16 18 f = 900 mhz f , gain bandwidth product (ghz) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mbc13900 rf product device data 5?7 figure 5. gain-bandwidth product versus collector current figure 6. maximum stable/available gain and forward insertion gain versus frequency figure 7. maximum stable/available gain and forward insertion gain versus frequency 2.0 16 0 3.0 v f = 1.9 ghz i c , collector current (ma) 2.0 v 14 12 10 8.0 6.0 4.0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 f , gain bandwidth product (ghz) 5.5 5.0 35 0 |s 21 | 2 msg v ce = 2.0 v i c = 5.0 ma f, frequency (ghz) mag 30 25 20 15 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) 5.0 35 0 f, frequency (ghz) 30 25 20 15 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) v ce = 3.0 v i c = 3.0 ma mag |s 21 | 2 msg f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mbc13900 motorola wireless 5?8 rf product device data figure 8. maximum stable/available gain and forward insertion gain versus collector current figure 9. maximum stable/available gain and forward insertion gain versus collector current figure 10. minimum noise figure and associated gain versus frequency i c , collector current (ma) |s 21 | 2 1.9 ghz v ce = 2.0 v msg/mag 1.9 ghz |s 21 | 2 900 mhz msg/ mag 900 mhz m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) 20 02.04.06.08.01012141618 6.0 26 24 22 20 18 16 14 12 10 8.0 7.0 27 25 23 21 19 17 15 13 11 9.0 i c , collector current (ma) m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) v ce = 3.0 v |s 21 | 2 1.9 ghz msg/mag 1.9 ghz |s 21 | 2 900 mhz msg/ mag 900 mhz 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 0.6 1.8 1.6 1.4 1.2 1.0 0.8 g n f , a s s o c i a t e d g a i n ( d b ) 2.0 26 nf mi n g nf v ce = 2.0 v ic = 5.0 ma f, frequency (ghz) 22 18 14 10 6.0 n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mbc13900 rf product device data 5?9 figure 11. minimum noise figure and associated gain versus frequency figure 12. minimum noise figure and associated gain versus collector current figure 13. minimum noise figure and associated gain versus collector current 2.0 28 26 22 18 14 10 6.0 24 20 16 12 8.0 4.0 4.0 0.5 0.6 1.8 f, frequency (ghz) 1.6 1.4 1.2 1.0 0.8 1.0 1.5 2.0 2.5 3.0 3.5 nf mi n g nf v ce = 3.0 v ic = 3.0 ma g n f , a s s o c i a t e d g a i n ( d b ) n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) 0.6 1.8 1.6 1.4 1.2 1.0 0.8 0 24 20 16 12 8.0 4.0 g nf 900 mhz v ce = 2.0 v i c , collector current (ma) g nf 1.9 ghz nf mi n 900 mhz nf mi n 1.9 ghz g n f , a s s o c i a t e d g a i n ( d b ) n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 2.0 26 0.6 1.8 i c , collector current (ma) 22 1.6 18 1.4 14 1.2 10 1.0 6.0 0.8 g n f , a s s o c i a t e d g a i n ( d b ) n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) v ce = 3.0 v g nf 900 mhz g nf 1.9 ghz nf mi n 900 mhz nf mi n 1.9 ghz 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics mbc13900 motorola wireless 5?10 rf product device data figure 14. output third order intercept versus collector current figure 15. output third order intercept versus collector current figure 16. one db compression point versus collector current 0 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 2.0 v f = 900 mhz i c , collector current (ma) o i p 3 , o u t p u t i n t e r c e p t p o i n t ( d b m ) 3.0 v 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 4.0 26 24 22 20 18 16 14 12 10 8.0 6.0 o i p 3 , o u t p u t i n t e r c e p t p o i n t ( d b m ) i c , collector current (ma) 2.0 v f = 1.9 ghz 3.0 v 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 -14 14 10 6.0 2.0 -2.0 -6.0 -10 i c , collector current (ma) p 1 d b , 1 d b c o m p r e s s i o n p o i n t ( d b m ) 2.0 v f = 900 mhz 3.0 v 0 20 2.0 4.0 6.0 8.0 10 12 14 16 18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
typical performance characteristics motorola wireless mbc13900 rf product device data 5?11 figure 17. one db compression point versus collector current -14 i c , collector current (ma) p 1 d b , 1 d b c o m p r e s s i o n p o i n t ( d b m ) 14 10 6.0 2.0 -2.0 -6.0 -10 2.0 v f = 1.9 ghz 3.0 v 0 20 2.0 4.0 6.0 8.0 10 12 14 16 18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?12 rf product device data 3 applications information a flexible applications board topology has been developed to demonstrate the performance of the mbc13900 at 900 and 1900 mhz. the designs are a compromise of the competing performance requirements of gain, noise figure, input third-order intercept point (iip3) and return losses. pcb, samples and assembly information are available from motorola under part number kitmbc13900/d. 3.1 900 mhz lna figure 18 shows the schematic and figure 19 shows the component placement for a 900 mhz lna. the design goals for the circuit are: nf < 1.2 db gain > 19 db return loss > 10 db, input and output unconditional stability from 100 mhz to 6 ghz. typical performance that can be expected from this circuit at 3.0 and 3.5 v v cc is listed in table 4. the component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. gain can be improved by sacrificing stability (r3 and r5). input return loss can be sacrificed to improve noise figure. iip3 can be improved by increasing emitter degeneration (l3) and bias current (r2). unused traces are available on the pcb to add emitter degeneration at leads 1 and 3 of the device. figure 18. 900 mhz lna schematic c3 l1 r4 r3 c2 c4 v cc c1 r1 r2 rf in rf out r5 l2 l4 c 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?13 figure 19. 900 mhz lna board layout 3.2 1900 mhz lna figure figure 20 shows the schematic and figure 21 shows the component placement for a 1900 mhz lna. the design goals for the circuit are: nf < 1.35 db gain > 14 db return loss > 10 db, input and output unconditional stability from 100 mhz to 6 ghz. typical performance that can be expected from this circuit at 3.0 v v cc and 5.0 ma is listed in table 5. the component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. gain can be improved by sacrificing stability (r3 and r5). input return loss can be sacrificed to improve noise figure. input return loss can be improved at the expense of noise figure (c3, c7, l4). iip3 can be improved by increasing emitter degeneration (l3) and bias current (r2). unused traces are available on the pcb to add emitter degeneration at leads 1 and 3 of the device. table 4. typical 900 mhz lna performance v cc i c (ma) nf (db) 50 ? insertion gain (db) output ip3 (dbm) input return loss (db) output return loss (db) 3.0 5.0 1.2 19.7 15 10.1 10.2 3.5 6.1 1.21 20.2 17.6 10.8 10.8 gnd v cc c1 r 1 c4 r 5 l 2 c2 r3 c5 r2 r 4 l 1 c 6 c3 r6 component value comments c1 1.0 f optional bypassing c2 3.3 pf dc block and s 22 c3 12 pf dc block and s 11 c4 0.01 f broadband bypass c5 1.0 f broadband bypass c6 0.3 pf iip3 improvement l1 6.8 nh toko ll1608-fs, match, bias l2 5.6 nh toko ll1608-fh, match, bias l3 <0.5 nh emitter l on board (distance to gnd vias) r1 133 ? bias r2 49.9 k ? bias r3 16.5 ? stability, s 22 r4 0 ? jumper r5 3.9 ? stability, s 22 r6 0 ? jumper vias d = 15 mil pcb fr4 r =4.5, h=25 mil, t=1.75 mil f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?14 rf product device data figure 20. 1900 mhz lna schematic figure 21. 1900 mhz lna board layout table 5. typical 1900 mhz lna performance v cc i c (ma) nf (db) 50 ? insertion gain (db) output ip3 (dbm) input return loss (db) output return loss (db) 3.0 5.0 1.28 14 19 10.4 10.7 3.5 6.1 1.29 14.4 20.2 10.8 11 c3 l1 r4 r3 c2 c4 v cc c1 r1 r2 rf in rf out r5 l2 l4 c7 gnd v cc c1 r 1 c4 r 5 l 2 c2 r3 c5 r2 r 4 l 1 c 6 c3 r6 component value comments c1 1.0 f optional bypassing c2 22 pf dc block and output match c3 22 pf dc block and input match c4 0.01 f rf and im subharmonic short to ground c5 1.0 f rf and im subharmonic short to ground c7 0.6 pf input match, rf / s 11 compromise l1 8.2 nh bias decoupling, input match l2 3.3 nh output match, bias decoupling l3 <0.5 nh emitter l on board (distance to gnd vias) l4 1.2 nh s 11 r1 133 ? bias r2 49.9 k ? bias r3 8.2 ? stability and s 22 improvement r4 0 ? jumper r5 4.7 ? stability, gain, s 22 vias d = 15 mil pcb fr4 r =4.5, h=25 mil, t=1.75 mil f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?15 table 6. common emitter s-parameters v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 2.0 1.0 0.1 0.973 -6 3.754 175 0.008 86 0.997 -3 0.5 0.961 -33 3.366 153 0.038 71 0.968 -12 0.9 0.895 -57 3.341 135 0.065 56 0.910 -22 1.0 0.868 -63 3.256 131 0.070 53 0.915 -24 1.5 0.766 -91 2.688 111 0.091 38 0.851 -33 1.9 0.721 -114 2.610 94 0.100 26 0.788 -39 2.0 0.706 -119 2.501 91 0.102 23 0.780 -41 2.4 0.649 -140 2.280 77 0.104 15 0.731 -47 3.0 0.628 -166 1.984 58 0.105 2 0.667 -56 3.5 0.606 173 1.717 45 0.099 -3 0.650 -62 4.0 0.606 155 1.478 33 0.094 -10 0.640 -68 4.5 0.611 138 1.421 21 0.089 -12 0.604 -74 5.0 0.610 122 1.309 9 0.085 -11 0.581 -81 2.0 0.1 0.948 -8 7.181 173 0.008 86 0.993 -4 0.5 0.907 -41 6.508 146 0.037 67 0.937 -15 0.9 0.796 -70 5.770 126 0.059 52 0.843 -27 1.0 0.763 -77 5.533 121 0.062 49 0.842 -29 1.5 0.638 -107 4.304 101 0.076 36 0.753 -37 1.9 0.585 -131 3.904 86 0.082 27 0.675 -42 2.0 0.571 -136 3.716 83 0.083 25 0.667 -44 2.4 0.532 -156 3.272 70 0.085 20 0.616 -48 3.0 0.520 179 2.745 53 0.087 13 0.554 -57 3.5 0.511 159 2.360 41 0.088 10 0.542 -62 4.0 0.518 143 2.046 30 0.088 7 0.530 -67 4.5 0.529 128 1.907 19 0.091 5 0.500 -72 5.0 0.536 114 1.747 8 0.096 5 0.474 -78 3.0 0.1 0.926 -10 10.121 172 0.008 84 0.990 -4 0.5 0.853 -48 8.944 141 0.035 65 0.906 -18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?16 rf product device data 0.9 0.716 -80 7.393 120 0.053 49 0.786 -30 1.0 0.680 -87 7.000 115 0.056 47 0.780 -31 1.5 0.556 -118 5.248 95 0.068 36 0.685 -38 1.9 0.507 -141 4.579 81 0.073 31 0.609 -43 2.0 0.497 -147 4.359 78 0.074 29 0.601 -44 2.4 0.472 -166 3.778 66 0.077 25 0.554 -48 3.0 0.468 170 3.120 51 0.082 21 0.495 -56 3.5 0.466 152 2.680 39 0.086 18 0.485 -61 4.0 0.476 137 2.333 28 0.091 15 0.476 -66 4.5 0.491 123 2.148 18 0.096 12 0.447 -70 5.0 0.503 109 1.963 8 0.104 11 0.423 -75 5.0 0.1 0.884 -13 15.377 170 0.007 83 0.982 -6 0.5 0.753 -59 12.586 134 0.032 61 0.846 -22 0.9 0.595 -94 9.434 111 0.046 49 0.699 -33 1.0 0.561 -102 8.786 106 0.048 47 0.689 -34 1.5 0.457 -134 6.309 88 0.058 39 0.596 -39 1.9 0.421 -156 5.291 75 0.064 36 0.531 -42 2.0 0.416 -161 5.033 72 0.065 36 0.525 -43 2.4 0.408 -178 4.295 62 0.072 34 0.485 -47 3.0 0.418 160 3.505 48 0.080 30 0.435 -54 3.5 0.424 143 3.012 37 0.088 26 0.426 -58 4.0 0.437 129 2.633 27 0.095 23 0.415 -63 4.5 0.454 116 2.394 17 0.104 19 0.393 -67 5.0 0.471 104 2.181 7 0.114 15 0.368 -72 10 0.1 0.785 -19 25.691 165 0.007 78 0.961 -8 0.5 0.575 -79 17.485 122 0.027 59 0.750 -28 0.9 0.438 -118 11.534 99 0.037 51 0.595 -35 1.0 0.421 -126 10.545 95 0.038 51 0.567 -35 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?17 1.5 0.366 -156 7.311 80 0.050 48 0.500 -38 1.9 0.356 -176 5.901 69 0.058 46 0.454 -39 2.0 0.354 -180 5.625 67 0.060 46 0.449 -40 2.4 0.362 166 4.737 57 0.069 44 0.417 -43 3.0 0.392 148 3.842 45 0.082 38 0.372 -49 3.5 0.399 134 3.307 35 0.092 34 0.357 -54 4.0 0.414 120 2.907 25 0.103 29 0.345 -59 4.5 0.434 109 2.613 16 0.113 25 0.328 -65 5.0 0.453 98 2.374 6 0.124 18 0.307 -69 15 0.1 0.708 -25 32.559 161 0.007 83 0.938 -10 0.5 0.480 -94 19.200 115 0.024 58 0.679 -29 0.9 0.381 -133 11.991 94 0.033 54 0.538 -34 1.0 0.371 -141 10.889 90 0.035 54 0.515 -33 1.5 0.344 -169 7.466 76 0.047 53 0.460 -36 1.9 0.345 174 5.959 66 0.056 51 0.424 -37 2.0 0.345 170 5.683 64 0.059 50 0.420 -38 2.4 0.358 157 4.765 55 0.069 47 0.392 -41 3.0 0.392 142 3.852 43 0.084 42 0.349 -47 3.5 0.403 129 3.324 33 0.095 37 0.336 -52 4.0 0.418 116 2.924 24 0.105 31 0.323 -57 4.5 0.438 106 2.618 14 0.117 26 0.307 -63 5.0 0.460 95 2.375 5 0.128 20 0.288 -67 20 0.1 0.639 -31 37.220 158 0.007 75 0.919 -12 0.5 0.430 -107 19.608 110 0.022 58 0.629 -30 0.9 0.365 -146 11.885 91 0.032 58 0.504 -32 1.0 0.360 -153 10.741 87 0.034 58 0.483 -32 1.5 0.350 -178 7.337 73 0.047 55 0.438 -34 1.9 0.357 167 5.815 64 0.056 54 0.408 -35 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?18 rf product device data 2.0 0.357 164 5.555 62 0.060 52 0.403 -36 2.4 0.371 152 4.641 53 0.069 49 0.378 -39 3.0 0.408 138 3.746 42 0.084 44 0.338 -45 3.5 0.419 126 3.239 32 0.096 39 0.323 -51 4.0 0.435 113 2.849 23 0.109 32 0.312 -56 4.5 0.453 104 2.545 13 0.119 27 0.295 -61 5.0 0.475 94 2.306 4 0.131 20 0.276 -66 3.0 1.0 0.1 0.970 -7 3.745 175 0.007 86 0.999 -3 0.5 0.949 -31 3.341 154 0.034 73 0.989 -12 0.9 0.892 -55 3.339 136 0.059 59 0.939 -21 1.0 0.878 -61 3.275 132 0.065 54 0.919 -23 1.5 0.778 -89 2.724 112 0.084 39 0.869 -31 1.9 0.730 -111 2.648 96 0.093 28 0.808 -37 2.0 0.714 -116 2.543 93 0.095 26 0.801 -39 2.4 0.652 -137 2.326 80 0.098 17 0.755 -44 3.0 0.634 -164 2.040 61 0.098 5 0.689 -53 3.5 0.604 175 1.765 48 0.093 -1 0.670 -60 4.0 0.599 157 1.521 35 0.091 -8 0.660 -66 4.5 0.604 140 1.466 23 0.084 -10 0.626 -73 5.0 0.602 124 1.348 12 0.080 -9 0.606 -79 2.0 0.1 0.951 -8 6.981 173 0.007 88 0.992 -3 0.5 0.913 -39 6.335 147 0.033 69 0.944 -14 0.9 0.807 -67 5.710 128 0.054 54 0.859 -25 1.0 0.774 -74 5.488 123 0.057 51 0.860 -27 1.5 0.647 -104 4.306 103 0.071 37 0.777 -35 1.9 0.591 -127 3.935 87 0.077 28 0.704 -40 2.0 0.576 -132 3.750 85 0.077 26 0.697 -42 2.4 0.531 -152 3.316 72 0.080 22 0.647 -47 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?19 3.0 0.516 -178 2.790 55 0.082 14 0.584 -55 3.5 0.505 162 2.402 43 0.081 12 0.574 -60 4.0 0.508 146 2.078 32 0.083 8 0.563 -65 4.5 0.521 130 1.943 21 0.084 7 0.535 -70 5.0 0.526 115 1.782 10 0.089 7 0.511 -76 3.0 0.1 0.928 -9 10.077 172 0.007 84 0.991 -4 0.5 0.859 -46 8.948 142 0.032 66 0.917 -17 0.9 0.725 -77 7.487 121 0.049 51 0.806 -28 1.0 0.687 -84 7.105 116 0.052 50 0.803 -30 1.5 0.559 -115 5.356 97 0.063 38 0.711 -37 1.9 0.505 -138 4.701 82 0.067 31 0.638 -41 2.0 0.493 -143 4.473 79 0.068 31 0.631 -42 2.4 0.462 -162 3.886 68 0.072 27 0.585 -47 3.0 0.458 173 3.218 52 0.077 22 0.529 -54 3.5 0.452 154 2.763 41 0.082 20 0.518 -59 4.0 0.460 139 2.403 30 0.085 17 0.509 -64 4.5 0.476 125 2.216 20 0.090 14 0.483 -69 5.0 0.486 110 2.025 10 0.098 13 0.460 -74 5.0 0.1 0.884 -12 15.441 170 0.007 82 0.985 -5 0.5 0.756 -55 12.831 135 0.029 64 0.882 -22 0.9 0.598 -90 9.722 112 0.042 50 0.743 -31 1.0 0.570 -98 9.076 107 0.045 48 0.711 -32 1.5 0.458 -129 6.576 89 0.054 42 0.629 -38 1.9 0.415 -152 5.514 76 0.060 38 0.564 -40 2.0 0.408 -157 5.251 74 0.061 37 0.557 -41 2.4 0.395 -174 4.489 63 0.067 35 0.517 -45 3.0 0.407 163 3.680 49 0.076 31 0.464 -51 3.5 0.407 146 3.158 39 0.083 28 0.450 -56 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?20 rf product device data 4.0 0.417 131 2.768 29 0.090 25 0.438 -61 4.5 0.434 118 2.517 19 0.098 21 0.419 -67 5.0 0.450 105 2.294 9 0.108 17 0.398 -72 10 0.1 0.795 -18 25.574 165 0.007 79 0.970 -7 0.5 0.587 -74 17.871 123 0.025 60 0.780 -26 0.9 0.438 -112 11.957 101 0.034 54 0.631 -33 1.0 0.417 -119 10.950 97 0.036 52 0.602 -33 1.5 0.351 -150 7.620 81 0.047 50 0.536 -37 1.9 0.334 -171 6.171 70 0.054 47 0.490 -38 2.0 0.332 -175 5.878 68 0.056 47 0.485 -39 2.4 0.336 169 4.960 59 0.065 45 0.454 -42 3.0 0.363 151 4.029 46 0.076 40 0.408 -48 3.5 0.371 136 3.465 36 0.087 36 0.393 -53 4.0 0.385 122 3.048 27 0.097 31 0.383 -58 4.5 0.405 110 2.743 17 0.107 26 0.368 -63 5.0 0.425 99 2.493 8 0.117 20 0.348 -68 15 0.1 0.723 -22 32.706 163 0.006 79 0.949 -9 0.5 0.487 -88 19.861 116 0.021 60 0.695 -26 0.9 0.373 -127 12.612 96 0.031 55 0.556 -32 1.0 0.355 -134 11.492 92 0.033 55 0.555 -32 1.5 0.317 -164 7.867 77 0.044 53 0.494 -34 1.9 0.312 177 6.309 67 0.053 52 0.460 -37 2.0 0.315 173 6.004 65 0.055 51 0.454 -37 2.4 0.327 159 5.044 56 0.064 48 0.429 -41 3.0 0.354 142 4.069 44 0.078 43 0.390 -47 3.5 0.371 128 3.507 35 0.089 38 0.384 -52 4.0 0.383 116 3.073 25 0.099 33 0.376 -57 4.5 0.400 105 2.757 16 0.109 27 0.361 -61 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?21 5.0 0.427 95 2.500 7 0.120 21 0.341 -65 20 0.1 0.660 -27 37.408 160 0.006 79 0.933 -10 0.5 0.430 -98 20.678 112 0.021 60 0.672 -27 0.9 0.343 -137 12.691 93 0.030 59 0.548 -31 1.0 0.335 -144 11.493 89 0.032 59 0.526 -31 1.5 0.313 -172 7.854 75 0.044 57 0.479 -33 1.9 0.317 171 6.249 66 0.052 55 0.450 -34 2.0 0.318 168 5.963 64 0.055 54 0.446 -35 2.4 0.332 155 4.996 55 0.065 51 0.421 -38 3.0 0.365 140 4.042 43 0.080 45 0.381 -44 3.5 0.379 127 3.486 34 0.090 40 0.366 -50 4.0 0.393 115 3.068 25 0.102 34 0.356 -55 4.5 0.411 105 2.747 16 0.112 29 0.342 -61 5.0 0.434 94 2.492 6 0.123 23 0.324 -66 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?22 rf product device data table 7. common emitter noise parameters v ce (v) i c (ma) freq (ghz) nfmin (db) gamma opt rn ? rn ? g nf (db) k mag ang 2.0 5.0 0.5 0.76 0.26 3 9.0 0.18 25.27 0.29 0.7 0.76 0.25 14 8.5 0.17 23.60 0.37 0.9 0.77 0.24 25 8.5 0.17 22.03 0.48 1.0 0.77 0.24 31 8.0 0.16 21.29 0.51 1.5 0.82 0.23 60 7.0 0.14 17.94 0.74 1.9 0.90 0.22 85 6.5 0.13 15.73 0.90 2.0 0.92 0.22 91 6.5 0.13 15.24 0.93 2.4 1.03 0.22 116 5.5 0.11 13.54 1.03 3.0 1.24 0.23 155 5.0 0.10 11.75 1.17 3.5 1.47 0.25 -172 5.0 0.10 10.96 1.23 4.0 1.74 0.27 137 6.5 0.13 10.81 1.29 3.0 3.0 0.5 0.76 0.38 8 12.0 0.24 24.32 0.22 0.7 0.76 0.37 17 11.5 0.23 22.70 0.28 0.9 0.76 0.37 26 11.0 0.22 21.19 0.36 1.0 0.77 0.36 31 11.0 0.22 20.47 0.38 1.5 0.82 0.35 56 9.5 0.19 17.24 0.59 1.9 0.91 0.34 77 8.5 0.17 15.10 0.76 2.0 0.94 0.34 83 8.0 0.16 14.63 0.79 2.4 1.06 0.33 105 6.5 0.13 12.98 0.94 3.0 1.32 0.31 141 5.0 0.10 11.27 1.12 3.5 1.59 0.30 173 4.5 0.09 10.52 1.24 4.0 1.92 0.29 -153 6.5 0.13 10.39 1.34 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?23 figure 22. simplified package model table 8. spice parameters (mbc13900 die parameters) namevaluenamevaluenamevalue is 2.77e-16 irb 0.006 tf 6.34e-12 bf 181.6 rbm 0.047 xtf 3.051 nf 1.012 re 4.431 vtf 1.336 vaf 40.66 rc 5.845 itf 0.202 ikf 0.237 xtb 0.6 ptf 0 ise 3.79e-14 eg 1.195 tr 1.02e-09 ne 2.00 xti 0.8 fc 0.95 br 4.547 cje 4.52e-13 nr 1.00 vje 1.95 var 2.722 mje 0.58 ikr 9.98e-04 cjc 1.56e-13 isc 3.78e-15 vjc 0.424 nc 2.00 mjc 0.232 rb 9.055 xcjc 0.187 7.0 ff 0.5 nh 0.6 nh 140 ff 140 ff 0.1 nh 0.6 nh 0.5 nh b c e b c e 0.25 nh f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information mbc13900 motorola wireless 5?24 rf product device data figure 23. constant gain and noise figure contours (f = 900 mhz) figure 24. constant gain and noise figure contours (f = 1.9 ghz) f (ghz) nf opt (db) rn k 0.9 0.77 8.5 0.48 o 0.24 25.2 v ce = 2.0 v i c = 5.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 i n p u t o u t p u t 23 db 22 20 21 1.0 db 1.5 2.0 3.0 4.0 nf opt = 0.77 db f (ghz) nf opt (db) rn k 1.9 0.9 6.5 0.90 o 0.22 84.5 v ce = 2.0 v i c = 5.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 17 16 i n p u t 18 19 db o u t p u t 3.0 4.0 2.0 db 1.0 db nf opt = 0.90 db 1.5 db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications information motorola wireless mbc13900 rf product device data 5?25 figure 25. constant gain and noise figure contours (f = 900 mhz) figure 26. constant gain and noise figure contours (f = 1.9 ghz) f (ghz) nf opt (db) rn k 0.9 0.76 11 0.36 o 0.37 26.3 v ce = 3.0 v i c = 3.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 i n p u t o u t p u t 4.0 3.0 2.0 1.5 1.0 db 21 db 20 18 19 nf opt = 0.76 db f (ghz) nf opt (db) rn k 1.9 0.91 8.5 0.76 o 0.34 77.2 v ce = 3.0 v i c = 3.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 i n p u t 3.0 4.0 1.0 db o u t p u t 18 db 17 15 16 1.5 2.0 nf opt = 0.91 db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf281sr1 mrf281zr1 5?26 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for digital and analog cellular pcn and pcs base station applications with frequencies from 1000 to 2500 mhz. characterized for operation class a and class ab at 26 volts in commercial and industrial applications. ? specified two?tone performance @ 1930 and 2000 mhz, 26 volts output power ? 4 watts pep power gain ? 11 db efficiency ? 30% intermodulation distortion ? ?29 dbc ? capable of handling 10:1 vswr, @ 26 vdc, 2000 mhz, 4 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? s?parameter characterization at high bias levels ? available in tape and reel. r1 suffix = 500 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs 20 vdc total device dissipation @ t c = 25 c derate above 25 c p d 20 0.115 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 5.74 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 65 74 ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0) i dss ? ? 10 adc gate?source leakage current (v gs = 20 vdc, v ds = 0) i gss ? ? 1 adc note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2000 mhz, 4 w, 26 v lateral n?channel broadband rf power mosfets case 458b?03, style 1 (ni?200s) (mrf281sr1) case 458c?03, style 1 (ni?200z) (mrf281zr1) rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?27 mrf281sr1 mrf281zr1 motorola wireless rf product device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 vdc, i d = 20 adc) v gs(th) 2.4 3.2 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 25 madc) v gs(q) 3 4.1 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 0.1 a) v ds(on) 0.18 0.24 0.30 vdc dynamic characteristics input capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c iss ? 5.5 ? pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c oss ? 3.3 ? pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss ? 0.17 ? pf functional tests (in motorola test fixture) common?source amplifier power gain (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) g ps 11 12.5 ? db drain efficiency (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) 30 33 ? % input return loss (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) irl ? ?16 ?10 db intermodulation distortion (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) imd ? ?31 ?29 dbc common?source amplifier power gain (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) g ps 11 12.5 ? db drain efficiency (v dd = 26 vdc, p out = 4 w, i dq = 25 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) 30 ? ? % input return loss (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) irl ? ?16 ?10 db intermodulation distortion (v dd = 26 vdc, p out = 4 w pep, i dq = 25 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) imd ? ?31 ? dbc common?source amplifier power gain (v dd = 26 vdc, p out = 4 w cw, i dq = 25 ma, f1 = 2000.0 mhz) g ps 10.5 12 ? db drain efficiency (v dd = 26 vdc, p out = 4 w cw, i dq = 25 ma, f1 = 2000.0 mhz) 40 44 ? % output mismatch stress (v dd = 26 vdc, p out = 4 w cw, i dq = 25 ma, f1 = 2000.0 mhz, vswr = 10:1, all phase angles at frequency of test) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf281sr1 mrf281zr1 5?28 motorola wireless rf product device data figure 1. series equivalent input and output impedance f mhz z in ? z ol * ? 1500 1600 1700 1800 3.15 ? j5.3 3.1 ? j2.3 3.1 ? j3.8 3.1 ? j0.7 15.5 ? j13.6 14.7 ? j12.5 14.0 ? j11.7 13.4 ? j11.0 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at given output power, voltage, imd, bias current and frequency. 1900 3.1 + j0.9 12.8 ? j10.1 2000 3.1 + j2.4 12.2 ? j9.2         
                ?    ! " !    ! # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- " ! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?29 mrf281sr1 mrf281zr1 motorola wireless rf product device data table 1. common source s?parameters at v ds = 26 vdc, i d = 250 madc f s 11 s 21 s 12 s 22 ghz |s 11 |  db  |s 12 |  |s 22 |  0.1 .982 -28 18.9 160 .008 73 .851 -13 0.2 .947 -52 17.0 143 .015 58 .811 -25 0.3 .912 -73 15.0 129 .019 45 .770 -33 0.4 .886 -90 12.9 117 .022 36 .741 -42 0.5 .859 -103 11.1 108 .022 28 .719 -47 0.6 .854 -114 9.69 100 .023 23 .718 -51 0.7 .841 -123 8.54 93 .022 18 .709 -56 0.8 .837 -131 7.57 87 .021 15 .714 -59 0.9 .838 -138 6.69 81 .019 12 .719 -62 1.0 .841 -143 6.01 76 .018 11 .728 -64 1.1 .840 -149 5.41 72 .015 12 .742 -66 1.2 .849 -153 4.91 68 .013 13 .745 -68 1.3 .848 -158 4.51 64 .012 18 .758 -69 1.4 .856 -162 4.12 60 .010 26 .769 -70 1.5 .858 -167 3.78 57 .009 36 .786 -70 1.6 .871 -170 3.50 54 .008 54 .797 -72 1.7 .868 -173 3.22 51 .009 69 .808 -71 1.8 .870 -176 3.00 49 .009 82 .823 -72 1.9 .872 -180 2.80 46 .011 95 .828 -72 2.0 .877 178 2.63 44 .013 104 .845 -72 2.1 .876 174 2.47 41 .015 109 .843 -72 2.2 .880 171 2.36 39 .018 111 .859 -71 2.3 .882 168 2.21 36 .021 114 .858 -72 2.4 .886 165 2.12 34 .024 114 .872 -70 2.5 .896 162 1.97 32 .027 115 .863 -70 2.6 .897 158 1.89 29 .029 117 .873 -69 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf282sr1 mrf282zr1 5?30 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for class a and class ab pcn and pcs base station applications with frequencies up to 2600 mhz. suitable for fm, tdma, cdma, and multicarrier amplifier applications. ? specified two?tone performance @ 2000 mhz, 26 volts output power ? 10 watts pep power gain ? 10.5 db efficiency ? 28% intermodulation distortion ? ?31 dbc ? specified single?tone performance @ 2000 mhz, 26 volts output power ? 10 watts cw power gain ? 9.5 db efficiency ? 35% ? capable of handling 10:1 vswr, @ 26 vdc, 2000 mhz, 10 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r1 suffix = 500 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs 20 vdc total device dissipation @ t c = 25 c derate above 25 c p d 60 0.34 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 4.2 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0) i dss ? ? 1.0 adc gate?source leakage current (v gs = 20 vdc, v ds = 0) i gss ? ? 1.0 adc note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2000 mhz, 10 w, 26 v lateral n?channel broadband rf power mosfets case 458b?03, style 1 (ni?200s) (mrf282sr1) case 458c?03, style 1 (ni?200z) (mrf282zr1) rev 12 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?31 mrf282sr1 mrf282zr1 motorola wireless rf product device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 vdc, i d = 50 adc) v gs(th) 2.0 3.0 4.0 vdc drain?source on?voltage (v gs = 10 vdc, i d = 0.5 adc) v ds(on) ? 0.4 0.6 vdc gate quiescent voltage (v ds = 26 vdc, i d = 75 madc) v gs(q) 3.0 4.0 5.0 vdc dynamic characteristics input capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c iss ? 15 ? pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c oss ? 8.0 ? pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss ? 0.45 ? pf functional tests (in motorola test fixture) common?source power gain (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) g ps 10.5 11.5 ? db drain efficiency (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) 28 ? ? % intermodulation distortion (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) irl ? ?14 ?9 db common?source power gain (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) g ps 10.5 11.5 ? db drain efficiency (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) 28 ? ? % intermodulation distortion (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 10 w pep, i dq = 75 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) irl ? ?14 ?9 db common?source power gain (v dd = 26 vdc, p out = 10 w cw, i dq = 75 ma, f = 2000.0 mhz) g ps 9.5 11.5 ? db drain efficiency (v dd = 26 vdc, p out = 10 w cw, i dq = 75 ma, f = 2000.0 mhz) 35 40 ? % output mismatch stress (v dd = 26 vdc, p out = 10 w cw, i dq = 75 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz, load vswr = 10:1, all phase angles at frequency of test) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf282sr1 mrf282zr1 5?32 motorola wireless rf product device data figure 1. 1.93 ? 2.0 ghz broadband test circuit schematic z11 0.636 x 0.055 microstrip z12 0.303 x 0.055 microstrip z13 0.463 x 0.080 microstrip z14 0.105 x 0.080 microstrip z15 0.452 0.085 x 0.080 microstrip z16 0.910 0.085 x 0.080 microstrip raw board 0.030 glass teflon ? , 2 oz copper, material 3 x 5 dimensions, arlon gx0300?55?22, r = 2.55 34 ) /1 34 /1 /1    5  6 7 8 5   95 9 9 9 9 35 : 9 9 :5 3 9 : 97 96 9 " 9 /1 ; ;    98  9    9" 95 97  96 3 3 : 3 z1 0.491 x 0.080 microstrip z2 0.253 x 0.080 microstrip z3 0.632 x 0.080 microstrip z4 0.567 x 0.080 microstrip z5 1.139 x 0.055 microstrip z6 0.236 x 0.055 microstrip z7 0.180 x 0.325 microstrip z8 0.301 x 0.325 microstrip z9 0.439 x 0.325 microstrip z10 0.055 x 0.325 microstrip table 1. 1.93 ? 2.0 ghz broadband test circuit component designations and values designators description b1, b4 surface mount ferrite beads, 0.120 x 0.333 x 0.100 , fair rite #2743019446 b2, b3 surface mount ferrite beads, 0.120 x 0.170 x 0.100 , fair rite #2743029446 c1, c2, c9 0.8?8.0 pf variable capacitors, johanson gigatrim #27291sl c3 10  f, 35 v tantalum surface mount chip capacitor, kemet #t495x106k035as4394 c4, c5, c13, c16 0.1  f chip capacitors, kemet #cdr33bx104akws c6 200 pf chip capacitor, b case, atc #100b201jca500x c7 18 pf chip capacitor, b case, atc #100b180kp500x c8 39 pf chip capacitor, b case, atc #100b390jca500x c10 27 pf chip capacitor, b case, atc #100b270jca500x c11 1.2 pf chip capacitor, b case, atc #100b1r2cca500x c12 0.6?4.5 pf variable capacitor, johanson gigatrim #27271sl c14 0.5 pf chip capacitor, b case, atc #100b0r5bca500x c15 15 pf chip capacitor, b case, atc #100b150jca500x c17 0.1 pf chip capacitor, b case, atc #100b0r1bca500x c18 22  f, 35 v tantalum surface mount chip capacitor, kemet #t491x226k035as4394 r1 560 k ? , 1/4 w chip resistor, 0.08 x 0.13 r2, r5 12 ? , 1/4 w chip resistors, 0.08 x 0.13 , garrett instruments #rm73b2b120jt r3, r4 91  , 1/4 w chip resistors, 0.08 x 0.13 , garrett instruments #rm73b2b910jt ws1, ws2 beryllium copper wear blocks 0.010 x 0.235 x 0.135 nom brass banana jack and nut red banana jack and nut green banana jack and nut type ?n? jack connectors, omni?spectra # 3052?1648?10 4?40 ph head screws, 0.125 long 4?40 ph head screws, 0.188 long 4?40 ph head screws, 0.312 long 4?40 ph rec. hd. screws, 0.438 long rf circuit board 3 x 5 copper clad pcb, glass teflon ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?33 mrf282sr1 mrf282zr1 motorola wireless rf product device data mrf282 rev?0 d. w. joersz 9 9 9 9 3 3 35 9 97 9 95 98 3 3 95 9 96 9 9 9 9" 96 97 < : :5 : : < figure 2. 1.93?2.0 ghz broadband test circuit component layout mrf282 rev?0 d. w. joersz <&%=* > figure 3. mrf282 test circuit photomaster (reduced 18% in printed data book, DL110/d) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf282sr1 mrf282zr1 5?34 motorola wireless rf product device data 34 ) /1 "   5    6 8     9 9 9 95   98 3 : 9 3 : 96 35 :5 96 9 7 9 /1 ; 9 97  5   9 3 : 95 3 : 9" 3 : ; 9 9 figure 4. 1.81 ? 1.88 ghz broadband test circuit schematic z8 0.414 x 0.330 microstrip z9 0.392 x 0.08 microstrip z10 0.070 x 0.08 microstrip z11 1.110 x 0.08 microstrip raw board 0.030 glass teflon ? , 2 oz copper, material 3 x 5 dimensions, arlon gx0300?55?22, r = 2.55 34 /1 /1 z1 0.122 x 0.08 microstrip z2 0.650 x 0.08 microstrip z3 0.160 x 0.08 microstrip z4 0.030 x 0.08 microstrip z5 0.045 x 0.08 microstrip z6 0.291 x 0.08 microstrip z7 0.483 x 0.330 microstrip table 2. 1.81 ? 1.88 ghz broadband test circuit component designations and values designators description b1, b2, b3, b4, b5, b6 surface mount ferrite beads, 0.120 x 0.170 x 0.100 , fair rite #2743029446 c1, c16 470 f, 63 v electrolytic capacitors, mallory #sme63ub471m12x25l c2, c9, c12, c17 0.6?4.5 pf variable capacitors, johanson gigatrim #27271sl c3 0.8?8.0 pf variable capacitor, johanson gigatrim #27291sl c4, c13 0.1 f chip capacitors, kemet #cdr33bx104akws c5, c14 100 pf chip capacitors, b case, atc #100b101jca500x c6, c8, c11, c15 12 pf chip capacitors, b case, atc #100b120jca500x c7, c10 1000 pf chip capacitors, b case, atc #100b102jca50x l1 3 turns, 27 awg, 0.087 od, 0.050 id, 0.053 long, 6.0 nh l2 5 turns, 27 awg, 0.087 od, 0.050 id, 0.091 long, 15 nh l3, l4 9 turns, 26 awg, 0.080 od, 0.046 id, 0.170 long, 30.8 nh l5 4 turns, 27 awg, 0.087 od, 0.050 id, 0.078 long, 10 nh r1, r2, r3 12 ? , 1/8 w fixed film chip resistors, garrett instruments #rm73b2b120jt r4, r5, r6 0.08 x 0.13 resistors, garrett instruments #rm73b2b120jt w1, w2 beryllium copper 0.010 ? "" ? "" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?35 mrf282sr1 mrf282zr1 motorola wireless rf product device data z7 0.408 x 0.08 microstrip z8 0.990 x 0.08 microstrip z9 0.295 x 0.08 microstrip raw board 0.030 glass teflon ? , 2 oz copper, material 3 x 5 dimensions, arlon gx0300?55?22, r = 2.55 figure 5. class a broadband test circuit schematic 34 ) /1 34 /1 /1 /1 8   5    7  mrf282sr1 mrf282zr1 5?36 motorola wireless rf product device data figure 6. series equivalent input and output impedence f mhz z in ? z ol * ? 1800 1860 1900 1960 2.1 + j1.0 2.0 + j1.2 2.05 + j1.15 1.9 + j1.4 3.8 ? j0.15 3.77 ? j0.13 3.75 ? j0.1 3.65 + j0.1 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at given output power, voltage, imd, bias current and frequency.         6
   "            ?   7 ! 2000 1.85 + j1.6 3.55 + j0.2 " ! # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-   7 ! " ! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?37 mrf284r1 mrf284lsr1 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1000 to 2600 mhz. suitable for fm, tdma, cdma, and multicarrier amplifier applications. to be used in class a and class ab for pcn?pcs/cellular radio and wireless local loop. ? specified two?tone performance @ 2000 mhz, 26 volts output power = 30 watts pep power gain = 9 db efficiency = 30% intermodulation distortion = ?29 dbc ? typical single?tone performance at 2000 mhz, 26 volts output power = 30 watts cw power gain = 9.5 db efficiency = 45% ? capable of handling 10:1 vswr, @ 26 vdc, 2000 mhz, 30 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs 20 vdc total device dissipation @ t c = 25 c derate above 25 c p d 87.5 0.5 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.0 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 20 vdc, v gs = 0) i dss ? ? 1.0 adc gate?source leakage current (v gs = 20 vdc, v ds = 0) i gss ? ? 10 adc note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2000 mhz, 30 w, 26 v lateral n?channel broadband rf power mosfets case 360b?05, style 1 ni?360 mrf284r1 case 360c?05, style 1 ni?360s mrf284lsr1 rev 13 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf284r1 mrf284lsr1 5?38 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 adc) v gs(th) 2.0 3.0 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 200 madc) v gs(q) 3.0 4.0 5.0 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1.0 adc) v ds(on) ? 0.3 0.6 vdc forward transconductance (v ds = 10 vdc, i d = 1.0 adc) g fs ? 1.5 ? s dynamic characteristics input capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c iss ? 43 ? pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c oss ? 23 ? pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss ? 1.4 ? pf functional tests (in motorola test fixture, 50 ohm system) common?source power gain (v dd = 26 vdc, p out = 30 w, i dq = 200 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) g ps 9 10.5 ? db drain efficiency (v dd = 26 vdc, p out = 30 w, i dq = 200 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) 30 35 ? % intermodulation distortion (v dd = 26 vdc, p out = 30 w, i dq = 200 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) imd ? ?32 ?29 dbc input return loss (v dd = 26 vdc, p out = 30 w, i dq = 200 ma, f1 = 2000.0 mhz, f2 = 2000.1 mhz) irl ? ?15 ?9 db common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 200 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) g ps 9 10.4 ? db drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 200 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) ? 35 ? % intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 200 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) imd ? ?34 ? dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 200 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) irl ? ?15 ?9 db common?source amplifier power gain (v dd = 26 vdc, p out = 30 w cw, i dq = 200 ma, f1 = 2000.0 mhz) g ps 8.5 9.5 ? db drain efficiency (v dd = 26 vdc, p out = 30 w cw, i dq = 200 ma, f1 = 2000.0 mhz) 35 45 ? % output mismatch stress (v dd = 26 vdc, p out = 30 w cw, i dq = 200 ma, f1 = 2000.0 mhz, vswr = 10:1, at all phase angles) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?39 mrf284r1 mrf284lsr1 motorola wireless rf product device data figure 1. 1.93?2.0 ghz broadband test circuit schematic 34 ) /1 34 /1 /1    5    9 9 9  3 95 ; 9 : 3 9 : 35 96 9   6 7 /1   5 36 96 ; 9  3 9 :5 3 95 9  9"  9 5   5 6 z11 0.155 x 0.515 microstrip z12 0.120 x 0.325 microstrip z13 0.150 x 0.325 microstrip z14 0.010 x 0.325 microstrip z15 0.505 x 0.080 microstrip z16 0.865 x 0.080 microstrip z17 0.525 x 0.080 microstrip pcb arlon gx0300?55?22, 0.030 , r = 2.55  3  " 97 8 98 97 ; z1 0.530 x 0.080 microstrip z2 0.255 x 0.080 microstrip z3 0.600 x 0.080 microstrip z4 0.525 x 0.080 microstrip z5 0.015 x 0.325 microstrip z6 0.085 x 0.325 microstrip z7 0.165 x 0.325 microstrip z8 0.110 x 0.515 microstrip z9 0.095 x 0.515 microstrip z10 0.050 x 0.515 microstrip table 1. 1.93 ? 2.0 ghz broadband test circuit component designations and values designators description b1 ? b3 ferrite beads, round, ferroxcube #56?590?65?3b c1, c2, c8 0.8?8.0 pf gigatrim variable capacitors, johanson #27291sl c3, c17 22  f, 35 v tantalum surface mount chip capacitors, kemet #t491x226k035as4394 c4, c14 0.1  f chip capacitors, kemet #cdr33bx104akws c5 220 pf chip capacitor, b case, atc #100b221kp500x c6, c12 1000 pf chip capacitors, b case, atc #100b102jca50x c7, c13 5.1 pf chip capacitors, b case, atc #100b5r1cca500x c9 1.2 pf chip capacitor, b case, atc #100b1r2cca500x c10 2.7 pf chip capacitor, b case, atc #100b2r7cca500x c11 0.6?4.5 pf gigatrim variable capacitors, johanson #27271sl c15, c16 200 pf chip capacitors, b case, atc #100b201kp500x c18 10  f, 35 v tantalum surface mount chip capacitor, kemet #t495x106k035as4394 l1, l2 4 turns, #24 awg, 0.120 od, 0.140 long, (12.5 nh), coilcraft #a04t?5 l3 2 turns, #24 awg, 0.120 od, 0.140 long, (5.0 nh), coilcraft #a02t?5 r1, r2, r3, r5, r6, r7 12 ? , 1/4 w chip resistors, 0.08 x 0.13 , garrett instruments #rm73b2b120jt r4 560 k ? , 1/4 w chip resistor, 0.08 x 0.13 w1, w2, w3 solid copper buss wire, 16 awg ws1, ws2 beryllium copper wear blocks 0.005 x 0.250 x 0.250 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf284r1 mrf284lsr1 5?40 motorola wireless rf product device data mrf284 rev?0 9 9 9 9 3 3 35 9 97 9 95 98 3 36 3 3 95 9   5 96 9 9 9 9" 96 97 <  : : :5  5 < figure 2. 1.93?2.0 ghz broadband test circuit component layout figure 3. mrf284 test circuit photomaster (reduced 18% in printed data book, DL110/d) <&%=* > mrf284 rev?0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?41 mrf284r1 mrf284lsr1 motorola wireless rf product device data figure 4. 2.0 ghz class a test circuit schematic    5  "  mrf284r1 mrf284lsr1 5?42 motorola wireless rf product device data table 2. 2.0 ghz class a test circuit component designations and values designators description b1 ? b5 ferrite beads, round, ferroxcube # 56?590?65?3b c1, c9, c16 100 f, 50 v electrolytic capacitors, mallory #sme50vb101m12x25l c2, c13 51 pf chip capacitors, b case, atc #100b510jca500x c3, c14 10 pf chip capacitors, b case, atc #100b100jca500x c4, c11 12 pf chip capacitors, b case, atc #100b120jca500x c5 0.8 ? 8.0 pf variable capacitor, johansen gigatrim #27291sl c6 4.7 pf chip capacitor, b case, atc #100b4r7cca500x c7, c15 91 pf chip capacitors, b case, atc #100b910kp500x c8 1000 pf chip capacitor, b case, atc #100b102jca50x c10 0.1 f chip capacitor, kemet #cdr33bx104akws c12, c17 0.6 ? 4.5 pf variable capacitors, johansen gigatrim #27271sl l1 4 turns, #27 awg, 0.087 od, 0.050 id, 0.069 long, 10 nh l2 5 turns, #24 awg, 0.083 od, 0.040 id, 0.128 long, 12.5 nh l3, l4 9 turns, #26 awg, 0.080 od, 0.046 id, 0.170 long, 30.8 nh p1 1000 ? potentiometer, 1/2 w, 10 turns, bourns q1 transistor, npn, motorola p/n: mjd31, case 369a?10 q2 transistor, pnp, motorola p/n: mjd32, case 369a?10 r1 360 ? , fixed film chip resistor, 0.08 x 0.13 , garrett instruments #rm73b2b361jt r2 2 x 12 k ? , fixed film chip resistor, 0.08 x 0.13 , garrett instruments #rm73b2b122jt r3 1 ? , wirewound, 5 w, 3% resistor, dale # re60g1r00 r4 4 x 6.8 k ? , fixed film chip resistor, 0.08 x 0.13 , garrett instruments #rm73b2b682jt r5 2 x 1500 ? , fixed film chip resistor, 0.08 x 0.13 , garrett instruments #rm73b2b152jt r6 270 ? , fixed film chip resistor, 0.08 x 0.13 , garrett instruments #rm73b2b271jt r7 ? r11 12 ? , fixed film chip resistors, 0.08 x 0.13 , garrett instruments #rm73b2b120jt f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?43 mrf284r1 mrf284lsr1 motorola wireless rf product device data typical characteristics  #2 a 3a )a0:  #2 a )a0: figure 5. output power & power gain versus input power 5   ) /1 3  11< " "   figure 6. output power versus frequency " 7"  43/)9@ $!    " 5" 5 5  a/1 /1a 3a 11< 7"" """ "  a/1 /1a 3a 11< 5" 5 8   #2 a )a0: 77" 8" figure 7. intermodulation distortion products versus output power bc"   /1 /1 3  11<  bc7" figure 8. power gain and intermodulation distortion versus supply voltage     3 )   """ $! <(=* 1 * "   7 5  b5" b b" b b" bc6" bc" bc " bc" " 5"   5"        ""
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" 6 7 "  " 7" 7" 8"" 8" 8" 87"   5  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf284r1 mrf284lsr1 5?44 motorola wireless rf product device data typical characteristics   a3 )a9/33)1a 0& figure 11. dc safe operating area    3 )  " " 5" " " " " " " " bd" bd7" 9a9 91 )9a#4  a/1 /1a 3a0:
  9 ,22  7 4/) $)1  5,0 ,0*, 9 22 " 5    " 5" " b" bd5" bc" bd" bc " b6"  " 7  "   7  " 1 =%(*  6 9 1 =%(*  "" 9 1 e  6 9 5  9 22 bd8"     0&    7 0&    """" $!    """ $! " figure 14. 1.92?2.0 ghz broadband circuit performance  43/)9@ $! 8"   #2 a )a0: " 8 7 6   5 8" 8" 87" """     0&   5"        ""
1+ b1 * 4,*f*&g *=%  "" -!  #2 $ <3  b5 b" " 5" b5 " 5" ) /1a<3 449)9@ah 5 )13$/ 1) <131)a0:& 1 e  e/)91) 1$ 3 1/3  9  " ""  " "" " " ;" ;"8 ;"6 ;" ;" $1:4a4 913a/3#*,*  0,% &,,* * *22 % *=*.%*0 *
#*,%,* '%.* & ,,*=%*0  i**, '% "h  '* '* ,*&%= #,*0&   ,
*%= %=,* .0* $1:4 %& , ig     , $1:4  % #%,&=%, %##=&%  ;"7  ;" figure 15. mtbf factor versus junction temperature f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?45 mrf284r1 mrf284lsr1 motorola wireless rf product device data figure 16. series equivalent input and output impedence f mhz z source ? z load ? 1800 1860 1900 1960 1.0 ? j0.4 1.0 ? j1.1 1.0 ? j0.8 1.0 ? j1.4 2.1 + j0.4 2.2 ? j0.2 2.3 ? j0.5 2.5 ? j0.9  99       ""
     .( 2000 1.0 ? j2.3 2.6 ? j0.92   ?   """ $! 7"" $!   """ $! 7"" $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf372 5?46 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 32 volt transmitter equipment. ? typical narrowband two?tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 17 db efficiency ? 36% imd ? ?35 dbc ? typical broadband two?tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 14.5 db efficiency ? 37% imd ? ?31 dbc ? internally matched, controlled q, for ease of use ? integrated esd protection ? 100% tested for load mismatch stress at all phase angles with 3:1 vswr @ 32 vdc, f1 = 857 mhz, f2 = 863 mhz, 180 watts pep ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings (1) rating symbol value unit drain?source voltage v dss 68 vdc gate?source voltage v gs ? 0.5, +15 vdc drain current ? continuous i d 17 adc total device dissipation @ t c = 25 c derate above 25 c p d 350 2.0 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.5 c/w (1) each side of device measured separately. note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 470 ? 860 mhz, 180 w, 32 v lateral n?channel rf power mosfet case 375g?04, style 1 ni?860c3 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?47 mrf372 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain?source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 68 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.5 4.5 vdc drain?source on?voltage (v gs = 10 v, i d = 3 a) v ds(on) ? 0.28 0.45 vdc forward transconductance (v ds = 10 v, i d = 3 a) g fs ? 2.6 ? s dynamic characteristics (1) input capacitance (includes input matching capacitance) (v ds = 32 v, v gs = 0 v, f = 1 mhz) c iss ? 260 ? pf output capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c oss ? 69 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c rss ? 2.5 ? pf functional characteristics, narrowband operation (in motorola mrf372 narrowband circuit, 50 ohm system) (2) common source power gain (v dd = 32 v, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 16 17 ? db drain efficiency (v dd = 32 v, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) 33 36 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? ?35 ?31 dbc output mismatch stress (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz, v swr = 3:1 at all phase angles of test) no degradation in output power typical characteristics, broadband operation (in motorola mrf372 broadband circuit, 50 ohm system) (2) common source power gain (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) g ps ? 14.5 ? db drain efficiency (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) ? 37 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? ?31 ? dbc (1) each side of device measured separately. (2) measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf372 5?48 motorola wireless rf product device data typical characteristics figure 1. capacitance versus voltage  <  3 )b</39 1  1< aa9 22 aa9%#%&%&*a#4 note: c iss does not include input matching capacitance. " " ""  " "" " "  " " ""5"" "" 9 22 9 22 9 ,22 9 22 aa9%#%&%&*a#4 9 ,22 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?49 mrf372 motorola wireless rf product device data figure 2. 860 mhz narrowband dc bias networks      3 3  35  1 3 ) 5 3 9 95 ; 3  97 96 9 9" table 1. 860 mhz narrowband dc bias networks component designations and values designation description c1  f, 22 v tantalum chip capacitors, kemet #t491d226k22as  f, 100 v chip capacitors, vitramon #vj3640y105kxbat  f, 100 v chip capacitors, vitramon #vj3640y225kxbat  f, 100 v chip capacitors, kemet #vj1210y103kxbat r1a, b, r2a, b r4a, b, r5a, b 180 ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/8 w chip resistors, vishay dale (1206) pcb mrf372 printed circuit board rev 1a, rogers ro4350, height 30 mils, , = 3.48 , = 10.2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf372 5?50 motorola wireless rf product device data 3: 9: <i2,%* 5"
= '&- $  , =% *,&%= 7" $! :%= 3 (*,2 35""  "
= '&-
= 2=  &   %&&*# :%= #  " '

&, 2,# #   '

&, 2,# , 0 vertical balun mounting detail ) *> 1,
:%= 9: 2 '% % 5
= j%ij 2  '*
% 9: k2= j ,*2=(  :%= 2 =0*, #%02 i*( =*.*= +' '* 9: 2i2,%* 2 =0*, #%02 +'* ==g 2*,*0 #   '

&, 2,# $3456 3*.a% 98 3 95 3 95: : 3: 3: 9": 9" 9 9 9 9: 35 9 9 95 :  97 9 9 35: 9: 97: :   9 5: 9 : 96 96: 9 3 3 9: 3 : figure 3. 860 mhz narrowband component layout 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?51 mrf372 motorola wireless rf product device data typical two?tone narrowband characteristics figure 4. cofdm performance (860 mhz)   /1 /1 3  11<  figure 5. 8?vsb performance (860 mhz)   /1 /1 3  11<  figure 6. power gain versus output power   /1 /1 3  11<  figure 7. intermodulation distortion versus output power   /1 /1 3  11<  figure 8. drain efficiency versus output power   /1 /1 3  11<  " "  "  5" 5 b " b b" b5 b5" b b" b " "" "  "  5" 5 " b " b b" b5 b5" b b" b " "" "    7 " " "" b " b b" b5 b5" b b" b b" " "" "  "  5" 5 "  " ""    5 0&    7""
  7 6 $!   75 $!  a3 )a449)9@ah 7""
   ""
    5 0&   7 6 $!   75 $! $a)13$/ 1)a<131)a0:&  7""
    5 0&   7 6 $!   75 $!      #2 a 3a )a0: $3a)13$/ 1)a3 1a0: a3 )a449)9@ah   #2 a 3a )a0: $3  #2  a3 )a449)9@ah   #2 a 3a )a0: $3a)13$/ 1)a3 1a0: $3  #2     5 0&      0: *%-l .( 3% ""
   5 0&      m $ 0*   $ " 0: *%-l .( 3% ) *> $3
*%2,*0 2( *=% $%,-*, $*' 0 ) *> $3
*%2,*0 2( *=% $%,-*, $*' 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf372 5?52 motorola wireless rf product device data figure 9. narrowband series equivalent input and output impedance f mhz z source ? z load ? 845 860 875 3.99 ? j2.50 3.18 ? j1.46 3.56 ? j1.98 5.63 + j0.38 5.28 + j0.43 4.94 + j0.56    5     7""
   7"   f ghz z source ? z load ? 1.69 1.72 1.75 2.85 + j14.30 1.23 + j9.37 1.54 + j9.60 1.73 + j9.62 harmonics 3.27 + j14.32 3.35 + j14.36 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ;  2 ,&*  = %0   7 $!   7 $!   76 $!   " ?   76 $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?53 mrf372 motorola wireless rf product device data ; figure 10. 470?860 mhz broadband dc bias networks     5 38 38: 3  1 3 )  3 98 36 96 97 96 9 97 3 35 31 ; table 2. 470?860 mhz broadband dc bias networks component designations and values designation description c1  f, 22 v tantalum chip capacitors, kemet #t491d226k22as  f, 100 v chip capacitors, vitramon #vj3640y104kxbat  f, 35 v tantalum chip capacitors, kemet #t491d106k35as  f, 100 v chip capacitors, vitramon #vj3640y335kxbat  f chip capacitors, b case, atc ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/8 w chip resistors, vishay dale (1206) ? , thermistor, vishay #nths?1206j14520r5% ? , 1/4 w chip resistors, vishay dale (1210) ? , 1/4 w chip resistors, vishay dale (1210) ? potentiometer, bourns ? , 1/8 w chip resistor, vishay dale (1206) ? , 1/4 w chip resistors, vishay dale (1210) pcb mrf372 printed circuit board rev 1a, rogers ro4350, height 30 mils, , = 3.48 , = 10.2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf372 5?54 motorola wireless rf product device data $3456  9 9" 9 3 97 38 31 35  9 5 9 : 9: : 9 : 9: 9 3: 9 9 95 59 96: 35: 3: 9 95 95: 9 9 96 96: 31: 3: 3 3 : 36 3 99 9 98 98: 37 389 3" 3": 97 97: 96 38: 97: 3 5: 38 3*.a% figure 11. 470?860 mhz broadband component layout 9: <i2,%* 5"
= '&- $  , =% *,&%= " $! :%= 3 (*,2 35""  "
= '&-
= 2=  &   %&&*# :%= #  " '

&, 2,# #   '

&, 2,# , 0 vertical balun mounting detail ) *> 1,
:%= 9: 2 '% % 5
= k%ij 2  '*
% 9: k2= j ,*2=(  :%= 2 =0*, #%02 i*( =*.*= +' '* 9: 2i2,%* 2 =0*, #%02 +'* ==g 2*,*0 #   '

&, 2,# f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?55 mrf372 motorola wireless rf product device data typical two?tone broadband characteristics   /1 /1 3  11<  "    7 " " "" figure 12. power gain versus output power figure 13. intermodulation distortion versus output power   /1 /1 3  11<  figure 14. drain efficiency versus output power   /1 /1 3  11<   #2  " $!    5 0&    "  b    $! b " b b" b5 b5" b b" b b" " "" "  "  5" 5 "  " "" $a)13$/ 1)a<131)a0:&  #2 a 3a )a0: a3 )a449)9@ah  7" $! 6" $! " $!    5 0&    "  b    $! 7" $! $  6" $! " $!    5 0&    "  b    $!    7" $! 6" $!  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf372 5?56 motorola wireless rf product device data figure 15. broadband series equivalent input and output impedance f mhz z source ? z load ? 470 560 660 4.46 ? j2.57 7.84 + j0.14 6.40 + j1.06 4.88 ? j3.50 5.45 ? j0.07 8.13 + j0.73    5     "    7"   760 860 6.25 + j0.31 6.67 + j0.46 8.27 ? j1.00 7.52 + j0.02 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ;   " ?  2 ,&*   6" $!   7" $!  = %0   " ?   6" $!   7" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?57 mrf373ar1 mrf373alsr1 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed f or broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of these devices make them ideal for large?signal, common source amplifier applica- tions in 28/32 volt transmitter equipment. ? typical cw performance at 860 mhz, 32 volts, narrowband fixture output power ? 75 watts power gain ? 18.2 db efficiency ? 60% ? 100% tested for load mismatch stress at all phase angles with 10:1 vswr @ 32 vdc, 860 mhz, 75 watts cw ? integrated esd protection ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r1 = 500 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 70 vdc gate?source voltage v gs ? 0.5, +15 vdc total device dissipation @ t c = 25 c mrf373ar1 derate above 25 c mrf373alsr1 p d 197 1.12 278 1.59 watts w/ c watts w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case mrf373ar1 mrf373alsr1 r jc 0.89 0.63 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model mrf373ar1 mrf373alsr1 m2 (minimum) m1 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 470 ? 860 mhz, 75 w, 32 v lateral n?channel broadband rf power mosfets case 360b?05, style 1 ni?360 mrf373ar1 case 360c?05, style 1 ni?360s mrf373alsr1   < rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf373ar1 mrf373alsr1 5?58 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d =1 a) v (br)dss 70 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.3 4.5 vdc drain?source on?voltage (v gs = 10 v, i d = 3 a) v ds(on) ? 0.41 0.45 vdc dynamic characteristics input capacitance (v ds = 32 v, v gs = 0, f = 1 mhz) c iss ? 98.5 ? pf output capacitance (v ds = 32 v, v gs = 0, f = 1 mhz) c oss ? 49 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0, f = 1 mhz) c rss ? 2 ? pf functional characteristics (50 ohm system) common source power gain (v dd = 32 v, p out = 75 w cw, i dq = 200 ma, f = 860 mhz) g ps 16.5 18.2 ? db drain efficiency (v dd = 32 v, p out = 75 w cw, i dq = 200 ma, f = 860 mhz) 56 60 ? % load mismatch (v dd = 32 v, p out = 75 w cw, i dq = 200 ma, f = 860 mhz, load vswr at 10:1 at all phase angles) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?59 mrf373ar1 mrf373alsr1 motorola wireless rf product device data figure 1. mrf373ar1/alsr1 narrowband test circuit component layout 9 3 96 9 98 97 9" 9 95 9 9 9 9  95 $34565 9 9 9 96 35 3 3*.a" cut out area     34 ) /1 34 /1 /1 table 1. mrf373ar1/alsr1 narrowband test circuit component layout designations and values designation description c1, c2 18 pf chip capacitors, b case, atc c3 12 pf chip capacitor, b case, atc c4 1.8 pf chip capacitor, b case, atc c5, c10 51 pf chip capacitors, b case, atc c6 0.3 pf chip capacitor, b case, atc (used only on the mrf373as) c7 15 pf chip capacitor, b case, atc c8 10 pf chip capacitor, b case, atc c9 2.7 pf chip capacitor, b case, atc c11 0.5 pf chip capacitor, b case, atc c12 1000 pf chip capacitor, b case, atc c13 39 pf chip capacitor, b case, atc c14, c15 470 pf chip capacitors, b case, atc c16 2.2  f, 100 v chip capacitor, vishay #vj3640y225kxbat c17 10  f, 35 v tantalum capacitor, kemet #t491d106k35as l1a 12 nh, coilcraft #a04t r1, r2 390 ?, 1/2 ? chip resistors, vishay dale (2010) r3 1 k ?, 1/2 ? chip resistor, vishay dale (2010) pcb arlon gx?0300?55, 30 mils, r = 2.55 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf373ar1 mrf373alsr1 5?60 motorola wireless rf product device data typical characteristics 9 ,22 a9 91 )9a#4 9 22 9 22 9 ,22 9 22 a9 91 )9a#4 9 22  " " "" " " "  "  "" " " " " 5" " "  <  3 ) </39 1  1< figure 2. power gain versus output power 8" 5" 7""   3  #2    5 0&   6  9    ""
 43/)9@ $! figure 3. performance in narrowband circuit ) /1a31/3)a< ""
   5 0&   7" $!   /1 /1 3  11< 9 figure 4. capacitance versus voltage  #2 aa 3a )a0: 5""
""
""
8 7 6  " f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?61 mrf373ar1 mrf373alsr1 motorola wireless rf product device data figure 5. series equivalent input and output impedance f mhz z source ? z load ? 845 860 875 0.58 ? j0.29 0.56 + j0.06 0.56 ? j0.11 1.60 + j0.07 1.65 + j0.22 1.79 + j0.38    5     ""
   6  9    ?   7 $!   76 $!   7 $!   76 $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf374a 5?62 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 28/32 volt transmitter equipment. ? typical two?tone performance @ 860 mhz, 32 volts, narrowband fixture output power ? 130 watts pep power gain ? 17.3 db efficiency ? 41% imd ? ?32.5 dbc ? 100% tested for load mismatch stress at all phase angles with 10:1 vswr @ 32 vdc, 860 mhz, 130 watts, f1 = 857 mhz, f2 = 863 mhz ? integrated esd protection ? excellent thermal stability ? characterized with differential large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 70 vdc gate?source voltage v gs ? 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 302 1.72 watts w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.58 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 470 ? 860 mhz, 130 w, 32 v lateral n?channel broadband rf power mosfet case 375f?04, style 1 ni?650 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?63 mrf374a motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain?source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 70 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.3 4.5 vdc drain?source on?voltage (v gs = 10 v, i d = 3 a) v ds(on) ? 0.41 0.45 vdc dynamic characteristics (1) input capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c iss ? 97.3 ? pf output capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c oss ? 49 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c rss ? 1.91 ? pf functional characteristics, narrowband operation (in motorola mrf374a narrowband circuit, 50 ohm system) (2) common source power gain (v dd = 32 vdc, p out = 130 w pep, i dq = 2 x 200 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 16 17.3 ? db drain efficiency (v dd = 32 vdc, p out = 130 w pep, i dq = 2 x 200 ma, f1 = 857 mhz, f2 = 863 mhz) 36 41.2 ? % intermodulation distortion (v dd = 32 vdc, p out = 130 w pep, i dq = 2 x 200 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? ?32.5 ?28 db load mismatch (v dd = 32 vdc, p out = 130 w two?tone, i dq = 2 x 200 ma, f1 = 857 mhz, f2 = 863 mhz, vswr 10:1 at all phase angles of test) no degradation in output power typical characteristics, broadband operation (in motorola mrf374 broadband circuit, 50 ohm system) common source power gain (v dd = 32 vdc, p out = 100 w pep, i dq = 750 ma, f1 = 857 mhz, f2 = 863 mhz) g ps ? 15.8 ? db drain efficiency (v dd = 32 vdc, p out = 100 w pep, i dq = 750 ma, f1 = 857 mhz, f2 = 863 mhz) ? 35 ? % intermodulation distortion (v dd = 32 vdc, p out = 100 w pep, i dq = 750 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? 34.5 ? db (1) each side of device measured separately. (2) measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf374a 5?64 motorola wireless rf product device data figure 1. mrf374a narrowband test circuit component layout 9: <i2,%* 5"
= '&- $  , =% *,&%= 7" $! :%= 3 (*,2 35""  "
= '&-
= 2=  &   %&&*# :%= #  " '

&, 2,# #   '

&, 2,# , 0 vertical balun mounting detail ) *> 1,
:%= 9: 2 '% % 5
= j%ij 2  '*
% 9: k2= j ,*2=(  :%= 2 =0*, #%02 i*( =*.*= +' '* 9: 2i2,%* 2 =0*, #%02 +'* ==g 2*,*0 #   '

&, 2,# $3456 3*. 5% 9 9 95 35 3  5  9 5: 35: 9: 9 9 96 3 3: : 96: 95 95: 9" 98 98: 3  9 3: : 9: 9 9 9: 34 ) /1 34 /1 /1  <  <     f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?65 mrf374a motorola wireless rf product device data table 1. mrf374a narrowband test circuit component layout designations and values designation description c1 0.8 pf chip capacitor, b case, atc c2 2.2 pf chip capacitor, b case, atc c3 0.5 ? 5.0 pf variable capacitor, johanson gigatrim c4a, b, c12a, b 47 pf chip capacitors, b case, atc c5 1.0 pf chip capacitor, b case, atc c6 10 pf chip capacitor, b case, atc c7a, b, c14a, b 100,000 pf chip capacitors, b case, atc c9a, b 15 pf chip capacitors, b case, atc c10 3.9 pf chip capacitor, b case, atc c11 5.1 pf chip capacitor, b case, atc c13a, b 2.2  f, 100 v chip capacitors, vishay #vj3640y225kxbat l1a, b 5.0 nh, coilcraft #a02t l2a, b 8.0 nh, coilcraft #a03t l3a, b 130.0 nh, coilcraft #132?11smj l4 8.8 nh, coilcraft #1606?8 r1a, b 51  , 1/4 w chip resistors, vishay dale (1210) r2 10  , 1/2 w chip resistor, vishay dale (2010) r3a, b 3.3 k  , 1/8 w chip resistors, vishay dale (1206) r4a, b 180  , 1/4 w chip resistors, vishay dale (1210) pcb mrf374 printed circuit board rev 03, rogers ro4350, height 30 mils, r = 3.48 balun b1a, b vertical 860 mhz narrowband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, r = 10.2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf374a 5?66 motorola wireless rf product device data figure 2. mrf374 broadband test circuit component layout 9: <i2,%* 5"
= '&- $  , =% *,&%= " $! :%= 3 (*,2 35""  "
= '&-
= 2=  &   %&&*# :%= #  " '

&, 2,# #   '

&, 2,# , 0 vertical balun mounting detail ) *> 1,
:%= 9: 2 '% % 5
= k%ij 2  '*
% 9: k2= j ,*2=(  :%= 2 =0*, #%02 i*( =*.*= +' '* 9: 2i2,%* 2 =0*, #%02 +'* ==g 2*,*0 #   '

&, 2,# $3456 9 9  95 9 9 9 96 97 98 9" 9 9 95 3 97 36 3 3 1 35 3 96 5 9  9  95: 97: 98: 9: 97: 3: 96: 5: 9 : : 9: 36: 3: 3  9  98 34 ) /1 34 /1 /1  <  <     f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?67 mrf374a motorola wireless rf product device data table 2. mrf374 broadband test circuit component designations and values designation description c1 0.8 pf chip capacitor, b case, atc c2 8.2 pf chip capacitor, b case, atc c3a, b, c14a, b 100 pf chip capacitors, b case, atc c4 7.5 pf chip capacitor, b case, atc c5 3.0 pf chip capacitor, b case, atc c6 9.1 pf chip capacitor, b case, atc c7 15 pf chip capacitor, b case, atc c8a, b 12 pf chip capacitors, b case, atc c9a, b 4.7 pf chip capacitors, b case, atc c10 10 pf chip capacitor, b case, atc c11 3.6 pf chip capacitor, b case, atc c12 3.0 pf chip capacitor, b case, atc c13 2.7 pf chip capacitor, b case, atc c15a, b 3.3  f, 100 v chip capacitors, vitramon #vj3640y335kxbat c16a, b 22  f, 35 v chip capacitors, kemet #491d226k035as c17a, b 3.9 pf chip capacitors, b case, atc c18a, b 2.2  f, 50 v chip capacitors, vitramon #vj2225y225kxaat c19 10  f, 35 v chip capacitor, kemet #t491d106k035as l1a, b, l3a, b, l4, l5 8.0 nh, coilcraft #a03t l2, l6 12.5 nh, coilcraft #a04t r1a, b 22 ? , 1/8 w chip resistor, vishay dale (1206) r2a, b, r7a, b 10 ? , 1/8 w chip resistor, vishay dale (1206) r3 390 ? , 1/8 w chip resistor, vishay dale (1206) r4 2.4 k ? , 1/8 w chip resistor, vishay dale (1206) r5t 470 ? thermistor, koa speer mot #0680149m01 r6 6.8 k ?, 1/2 w resistor (axial lead), vishay dale (2010) pcb mrf374 printed circuit board rev 03, rogers ro4350, height 30 mils, , = 3.48 balun b1, b2 vertical 660 mhz broadband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, , = 10.2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf374a 5?68 motorola wireless rf product device data mrf374a typical characteristics 8""  7 ""    5 0&   ""        6 "
4,*f*&g   $!  #2 aa 3a )a0: 6 6     7"" 6"" "" "" 7 0& figure 3. gain versus frequency in broadband circuit figure 4. intermodulation distortion versus frequency in broadband circuit figure 5. drain efficiency versus frequency in broadband circuit  43/)9@ $!  43/)9@ $!  43/)9@ $! figure 6. performance in broadband circuit figure 7. capacitance versus voltage figure 8. cofdm intermodulation, gain and efficiency versus output power in broadband circuit  <  3 )b</39 1  1< 8"" b " b "" )13$/ 1)a<131)a0:& $    7 0& 5 0& b" b b5" b5 b" b 7"" 6"" "" "" 8"" "  ""    7 0& a3 )a449)9@ah 5 0& 7"" 6"" "" "" " 5 5"  8"" " " "" " " 3  #2 ) /1a31/3)a< 4,*f*&g   $!   ""        6 "
4,*f*&g   $!    5 0&   ""        6 "
4,*f*&g   $!    5 0&       7" $!  m $ 0* 94$   $ " *%-l .( 3% f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?69 mrf374a motorola wireless rf product device data mrf374a typical characteristics figure 9. 8?vsb intermodulation, gain and efficiency versus output power in broadband circuit figure 10. power gain versus peak output power in narrowband circuit figure 11. intermodulation distortion versus peak output power in narrowband circuit figure 12. drain efficiency versus peak output power in narrowband circuit   /1 /1 3  11<    /1 /1 3  11<    /1 /1 3  11<  "" " " " b" b"  #2 $3    5 0&       7" $! a3 )a449)9@aha  #2 a 3a )a0: 5 b 5" b5"  b5 " b"  b " b " b "  5 8    " 7""
 #2 aa 3a )a0: ""
""
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7 6    "" b b"     ""
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)13$/ 1)a<131)a0:& $ b b5" b5 b" b b " " ""
7""
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  7 6 $! " 5" " " " )13$/ 1)a0:& $3 a3 )a449)9@ah  "" "    5 0&   7 6 $! 4,*f*&g   $! 4,*f*&g   $!    5 0&   7 6 $! 4,*f*&g   $!   /1 /1 3  11<  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf374a 5?70 motorola wireless rf product device data mrf374a typical characteristics figure 13. power gain versus peak output power in broadband circuit figure 14. power gain versus peak output power in broadband circuit   /1 /1 3  11<    /1 /1 3  11<   7 6" $!    7 0&    6 "
1 * <#%&(   $!  #2 aa 3a )a0: " $! 6" $! " $! 7" $! 6 6      7 6" $!    5 0&    6 "
1 * <#%&(   $!  #2 aa 3a )a0: " $! 6" $! " $! 7" $! 6 6     7" $ 6" $ figure 15. drain efficiency versus peak output power in broadband circuit figure 16. drain efficiency versus peak output power in broadband circuit figure 17. intermodulation distortion versus peak output power in broadband circuit figure 18. intermodulation distortion versus peak output power in broadband circuit   /1 /1 3  11<    /1 /1 3  11<    /1 /1 3  11<    /1 /1 3  11<   a3 )a449)9@ah 5   7" $!    7 0&    6 "
1 * <#%&(   $! " $! 6" $! " 7" $    5 0&    6 "
1 * <#%&(   $! a3 )a449)9@ah " 5" " " b " b )13$/ 1)a<131)a0:& $ b5" b5 b" b    7 0&    6 "
1 * <#%&(   $! 6" $ " $ " $ )13$/ 1)a<131)a0:& $ b " b b5" b5 b" b 7" $    5 0&    6 "
1 * <#%&(   $! 6" $ 6" $ " $ " $ v dd = 28 vdc v dd = 32 vdc "" " "" " "" " "" " "" " "" " " $! 6" $! " $! " $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?71 mrf374a motorola wireless rf product device data figure 19. series equivalent input and output impedance f mhz z source ? z load ? 845 860 875 3.33 ? j2.42 2.73 ? j3.10 3.03 ? j2.39 4.56 ? j2.86 4.22 ? j3.16 3.87 ? j3.52    5     ""
   5"      ?  2 ,&*  = %0   7 $!   76 $!   7 $!   76 $! f mhz z source ? z load ? 470 660 860 5.79 + j0.97 3.16 ? j3.73 4.52 ? j0.50 4.54 ? j2.82 4.21 ? j3.04 3.86 ? j3.44    7     ""
   ""      ?  2 ,&*  = %0   6" $!   7" $!   6" $!   7" $! z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1511t1 5?72 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfet the mrf1511t1 is designed for broadband commercial and industrial applications at frequencies to 175 mhz. the high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5 volt portable fm equipment. ? specified performance @ 175 mhz, 7.5 volts output power ? 8 watts power gain ? 11.5 db efficiency ? 55% ? capable of handling 20:1 vswr, @ 9.5 vdc, 175 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? broadband uhf/vhf demonstration amplifier information available upon request ? rf power plastic surface mount package ? available in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 40 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 4 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 62.5 0.5 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2 c/w (1) calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 175 mhz, 8 w, 7.5 v lateral n?channel broadband rf power mosfet case 466?02, style 1 (pld?1.5) plastic   < t j? t c r jc rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?73 mrf1511t1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 35 vdc, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 10 vdc, v ds = 0) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 7.5 vdc, i d = 170 a) v gs(th) 1.0 1.6 2.1 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.4 ? vdc dynamic characteristics input capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c iss ? 100 ? pf output capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c oss ? 53 ? pf reverse transfer capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c rss ? 8 ? pf functional tests (in motorola test fixture) common?source amplifier power gain (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 175 mhz) g ps 10 11.5 ? db drain efficiency (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 175 mhz) 50 55 ? % f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1511t1 5?74 motorola wireless rf product device data figure 1. 135 ? 175 mhz broadband test circuit   9 3 96 9 35 34 ) /1 34 /1 /1  5  9 95 9 /1 6 8 "    7 ) 97 : ) ; 9 b1, b2 short ferrite bead, fair rite products (2743021446) c1, c5, c18 120 pf, 100 mil chip capacitor c2, c10, c12 0 to 20 pf, trimmer capacitor c3 33 pf, 100 mil chip capacitor c4 68 pf, 100 mil chip capacitor c6, c15 10 f, 50 v electrolytic capacitor c7, c16 1,200 pf, 100 mil chip capacitor c8, c17 0.1 f, 100 mil chip capacitor c9 150 pf, 100 mil chip capacitor c11 43 pf, 100 mil chip capacitor c13 24 pf, 100 mil chip capacitor c14 300 pf, 100 mil chip capacitor l1, l3 12.5 nh, a04t, coilcraft l2 26 nh, 4 turn, coilcraft l4 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mount r1 15 ? , 0805 chip resistor r2 1.0 k ? , 1/8 w resistor r3 1.0 k ? , 0805 chip resistor r4 33 k ? , 1/8 w resistor z1 0.200 x 0.080 microstrip z2 0.755 x 0.080 microstrip z3 0.300 x 0.080 microstrip z4 0.065 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.095 x 0.080 microstrip z8 0.418 x 0.080 microstrip z9 1.057 x 0.080 microstrip z10 0.120 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9 3 9   9 ; 97 : 3 9 96 98 9" 95 9 5   typical characteristics, 135 ? 175 mhz 6 $!  $! 5 $!   /1 /1 3  11< 3a) /1a31/3)a< 5?75 mrf1511t1 motorola wireless rf product device data typical characteristics, 135 ? 175 mhz    /1 /1 3  11< " " 6" "" a3 )a449)9@ah 5" " " 5  a3 )a449)9@ah figure 4. gain versus output power   /1 /1 3  11< 7   figure 5. drain efficiency versus output power   )a0: figure 6. output power versus biasing current     : <) 9/33)1 
  figure 7. drain efficiency versus biasing current 7"    : <) 9/33)1 
 figure 8. output power versus supply voltage     7"" 6 $!  $! 5 $!    6    6 0:
" 6 $!  $! 5 $!     "
  6 0:
" 6 $!  $! 5 $!     "
  6 0:
f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1511t1 5?76 motorola wireless rf product device data figure 10. 66 ? 88 mhz broadband test circuit   9 3 96 9 35 34 ) /1 34 /1 /1  5  9 95 9 /1 6 8 "    7 ) 9 : ) ; 98  9 3 9   95 ; 97 : 3 9 9 9 9" 5  b1, b2 short ferrite bead, fair rite products (2743021446) c1, c12 330 pf, 100 mil chip capacitor c2 43 pf, 100 mil chip capacitor c3, c10 0 to 20 pf, trimmer capacitor c4 24 pf, 100 mil chip capacitor c5, c16 120 pf, 100 mil chip capacitor c6, c13 10 f, 50 v electrolytic capacitor c7, c14 1,200 pf, 100 mil chip capacitor c8, c15 0.1 f, 100 mil chip capacitor c9 380 pf, 100 mil chip capacitor c11 75 pf, 100 mil chip capacitor l1 82 nh, coilcraft l2 55.5 nh, 5 turn, coilcraft l3 39 nh, 6 turn, coilcraft n1, n2 type n flange mount r1 15 ? , 0805 chip resistor r2 51 ? , 1/2 w resistor r3 100 ? , 0805 chip resistor r4 33 k ? , 1/8 w resistor z1 0.136 x 0.080 microstrip z2 0.242 x 0.080 microstrip z3 1.032 x 0.080 microstrip z4 0.145 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.134 x 0.080 microstrip z8 0.490 x 0.080 microstrip z9 0.872 x 0.080 microstrip z10 0.206 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper typical characteristics, 66 ? 88 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?77 mrf1511t1 motorola wireless rf product device data typical characteristics, 66 ? 88 mhz   /1 /1 3  11< " " 6"  a3 )a449)9@ah 5" " " 5  a3 )a449)9@ah figure 13. gain versus output power   /1 /1 3  11< 7 "  figure 14. drain efficiency versus output power   )a0:  figure 15. output power versus biasing current     : <) 9/33)1 
  figure 16. drain efficiency versus biasing current 7"    : <) 9/33)1 
 figure 17. output power versus supply voltage       6 0:
6 8 7"  $! 66 $! 77 $! " " " 8 7 6  $! 66 $! 77 $! 7""  6 8  $! 66 $! 77 $!    6     6 0:
   6     6  7"" 6"  $! 66 $! 77 $!    6     6 0:
 $! 66 $! 77 $!  $! 66 $! 77 $!     "
   6 0:
f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1511t1 5?78 motorola wireless rf product device data note: z ol * was chosen based on tradeoffs between gain, drain ef ficiency, and device stability. figure 19. series equivalent input and output impedance   " ? z in = complex conjugate of source impedance with parallel 15 ? resistor and 24 pf capacitor in series with gate. (see figure 10). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 135 20.1 ?j0.5 2.53 ?j2.61 z in = complex conjugate of source impedance with parallel 15 ? resistor and 68 pf capacitor in series with gate. (see figure 1). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %.    6      "
   7  155 17.0 +j3.6 3.01 ?j2.48 175 15.2 +j7.9 2.52 ?j3.02 f mhz z in ? z ol * ? 66 25.3 ?j0.31 3.62 ?j0.751    6      "
   7  77 25.6 +j3.62 3.59 ?j0.129 88 26.7 +j6.79 3.37 ?j0.173      5    6 $! 5    6 $!  66     77 $!  66   77 $!    # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?79 mrf1511t1 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 7.5 vdc) i dq = 150 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 30 0.88 ?165 18.92 95 0.015 8 0.84 ?169 50 0.88 ?171 11.47 91 0.016 ?5 0.84 ?173 100 0.87 ?175 5.66 85 0.016 ?7 0.84 ?176 150 0.87 ?176 3.75 82 0.015 ?5 0.85 ?176 200 0.87 ?177 2.78 78 0.014 ?6 0.84 ?176 250 0.87 ?177 2.16 75 0.014 ?10 0.85 ?176 300 0.88 ?177 1.77 72 0.012 ?17 0.86 ?176 350 0.88 ?177 1.49 69 0.013 ?11 0.86 ?176 400 0.88 ?177 1.26 66 0.013 ?17 0.87 ?175 450 0.88 ?177 1.08 64 0.011 ?20 0.87 ?175 500 0.89 ?176 0.96 63 0.012 ?20 0.88 ?175 i dq = 800 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 30 0.89 ?166 18.89 95 0.014 10 0.85 ?170 50 0.88 ?172 11.44 91 0.015 8 0.84 ?174 100 0.87 ?175 5.65 86 0.016 ?2 0.85 ?176 150 0.87 ?177 3.74 82 0.014 ?8 0.84 ?177 200 0.87 ?177 2.78 78 0.013 ?18 0.85 ?177 250 0.88 ?177 2.16 75 0.012 ?11 0.85 ?176 300 0.88 ?177 1.77 73 0.015 ?15 0.86 ?176 350 0.88 ?177 1.50 70 0.009 ?7 0.87 ?176 400 0.88 ?177 1.26 67 0.012 ?3 0.87 ?176 450 0.88 ?177 1.09 65 0.012 ?18 0.87 ?175 500 0.89 ?177 0.97 64 0.009 ?10 0.88 ?175 i dq = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 30 0.90 ?168 17.89 95 0.013 2 0.86 ?172 50 0.89 ?173 10.76 91 0.013 3 0.86 ?175 100 0.88 ?176 5.32 86 0.014 ?19 0.86 ?177 150 0.88 ?177 3.53 83 0.013 ?6 0.86 ?177 200 0.88 ?177 2.63 80 0.011 ?4 0.86 ?177 250 0.88 ?178 2.05 77 0.012 ?14 0.86 ?177 300 0.88 ?177 1.69 75 0.013 ?2 0.87 ?177 350 0.89 ?177 1.43 72 0.010 ?9 0.87 ?176 400 0.89 ?177 1.22 70 0.014 ?3 0.88 ?176 450 0.89 ?177 1.06 68 0.011 ?8 0.88 ?176 500 0.89 ?177 0.94 67 0.011 ?15 0.88 ?176 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1511t1 5?80 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf and uhf portable power amplifier applica- tions. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?81 mrf1511t1 motorola wireless rf product device data mounting the specified maximum thermal resistance of 2 c/w as- sumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two?port stability analysis with this device?s s?parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1513t1 5?82 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfet the mrf1513t1 is designed for broadband commercial and industrial applications with frequencies to 520 mhz. the high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile fm equipment. ? specified performance @ 520 mhz, 12.5 volts output power ? 3 watts power gain ? 11 db efficiency ? 55% ? capable of handling 20:1 vswr, @ 15.5 vdc, 520 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? broadband uhf/vhf demonstration amplifier information available upon request ? in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 40 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 2 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 31.25 0.25 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 4 c/w (1) calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 520 mhz, 3 w, 12.5 v lateral n?channel broadband rf power mosfet case 466?02, style 1 pld?1.5 plastic   < t j? t c r jc rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?83 mrf1513t1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 40 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 10 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 12.5 vdc, i d = 60 a) v gs(th) 1.0 1.7 2.1 vdc drain?source on?voltage (v gs = 10 vdc, i d = 500 madc) v ds(on) ? 0.65 ? vdc dynamic characteristics input capacitance (v ds = 12.5 vdc, v gs = 0, f = 1 mhz) c iss ? 33 ? pf output capacitance (v ds = 12.5 vdc, v gs = 0, f = 1 mhz) c oss ? 16.5 ? pf reverse transfer capacitance (v ds = 12.5 vdc, v gs = 0, f = 1 mhz) c rss ? 2.2 ? pf functional tests (in motorola test fixture) common?source amplifier power gain (v dd = 12.5 vdc, p out = 3 watts, i dq = 50 ma, f = 520 mhz) g ps 10 11 ? db drain efficiency (v dd = 12.5 vdc, p out = 3 watts, i dq = 50 ma, f = 520 mhz) 50 55 ? % f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1513t1 5?84 motorola wireless rf product device data ) figure 1. 450 ? 520 mhz broadband test circuit   96 3 97 9 35 34 ) /1 34 /1 /1 5  6 9 9 95 /1 7 8 "    ) 96 : ; 9 9" b1, b2 short ferrite beads, fair rite products #2743021446 c1, c13 240 pf, 100 mil chip capacitors c2, c3, c4, c10, c11, c12 0 to 20 pf trimmer capacitors c5, c6, c17 120 pf, 100 mil chip capacitors c7, c14 10  f, 50 v electrolytic capacitors c8, c15 1,200 pf, 100 mil chip capacitors c9, c16 0.1  f, 100 mil chip capacitors l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1, r3 15 ? chip resistors (0805) r2 1 k ? , 1/8 w resistor r4 33 k ? , 1/8 w resistor z1 0.236 x 0.080 microstrip z2 0.981 x 0.080 microstrip z3 0.240 x 0.080 microstrip z4 0.098 x 0.080 microstrip z5 0.192 x 0.080 microstrip z6, z7 0.260 x 0.223 microstrip z8 0.705 x 0.080 microstrip z9 0.342 x 0.080 microstrip z10 0.347 x 0.080 microstrip z11 0.846 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  95 3 9   9 ; 98 : 3 9 9  9  9 typical characteristics, 450 ? 520 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?85 mrf1513t1 motorola wireless rf product device data typical characteristics, 450 ? 520 mhz    /1 /1 3  11< " " a3 )a449)9@ah 5" " " 5  "" $! " $! 6" $! a3 )a449)9@ah figure 4. gain versus output power   /1 /1 3  11<  "  figure 5. drain efficiency versus output power   )a0: " figure 6. output power versus biasing current     : <) 9/33)1 
  figure 7. drain efficiency versus biasing current 6"    : <) 9/33)1 
  figure 8. output power versus supply voltage 7      "5 0:
   "
    0&   "5 0:
  "5 0:
   "
    0& 5   " 6"     0& ""  "" "   5 5   5  5"" 5"" 5" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1513t1 5?86 motorola wireless rf product device data figure 10. 400 ? 470 mhz broadband test circuit   96 3 97 9 35 34 ) /1 34 /1 /1  5  6 9 95 9 /1 7 "    8 ) 9 : ) ; 9 b1, b2 short ferrite bead, fair rite products #2743021446 c1, c12 330 pf, 100 mil chip capacitors c2, c3, c4, c10, c11 1 to 20 pf trimmer capacitors c5, c6, c16 120 pf, 100 mil chip capacitors c7, c13 10 f, 50 v electrolytic capacitors c8, c14 1,200 pf, 100 mil chip capacitors c9, c15 0.1  f, 100 mil chip capacitors l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 15 ? chip resistor (0805) r2 1 k ? , 1/8 w resistor r3 15 ? chip resistor (0805) r4 33 k ? , 1/8 w resistor z1 0.253 x 0.080 microstrip z2 0.958 x 0.080 microstrip z3 0.247 x 0.080 microstrip z4 0.193 x 0.080 microstrip z5 0.132 x 0.080 microstrip z6, z7 0.260 x 0.223 microstrip z8 0.494 x 0.080 microstrip z9 0.941 x 0.080 microstrip z10 0.452 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9 9" 3 9   95 ; 98 : 3 9 9 9 typical characteristics, 400 ? 470 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?87 mrf1513t1 motorola wireless rf product device data typical characteristics, 400 ? 470 mhz " $!    /1 /1 3  11< " " 6" " a3 )a449)9@ah 5" " " 5  a3 )a449)9@ah figure 13. gain versus output power   /1 /1 3  11< 5   figure 14. drain efficiency versus output power   )a0: " figure 15. output power versus biasing current     : <) 9/33)1 
  figure 16. drain efficiency versus biasing current 6"    : <) 9/33)1 
  figure 17. output power versus supply voltage 7      76 0:
   "
    0&   76 0:
  76 0:
   "
6 " " ""  "" " "     " " "  5      0&     0&  "" 5"" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1513t1 5?88 motorola wireless rf product device data figure 19. 135 ? 175 mhz broadband test circuit   96 3 97 9 35 34 ) /1 34 /1 /1   9 95 /1 7 8 "    ) 96 : ) ; 9 9 b1, b2 short ferrite beads, fair rite products #2743021446 c1, c13 330 pf, 100 mil chip capacitors c2, c4, c10, c12 0 to 20 pf trimmer capacitors c3 12 pf, 100 mil chip capacitor c5 130 pf, 100 mil chip capacitor c6, c17 120 pf, 100 mil chip capacitors c7, c14 10 f, 50 v electrolytic capacitors c8, c15 1,000 pf, 100 mil chip capacitors c9, c16 0.1 f, 100 mil chip capacitors c11 18 pf, 100 mil chip capacitor l1 26 nh, 4 turn, coilcraft l2 8 nh, 3 turn, coilcraft l3 55.5 nh, 5 turn, coilcraft l4 33 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 15  chip resistor (0805) r2 56  , 1/8 w chip resistor r3 10  , 1/8 w chip resistor r4 33 k  , 1/8 w chip resistor z1 0.115 x 0.080 microstrip z2 0.230 x 0.080 microstrip z3 1.034 x 0.080 microstrip z4 0.202 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 1.088 x 0.080 microstrip z8 0.149 x 0.080 microstrip z9 0.171 x 0.080 microstrip z10 0.095 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper    9 ; 98 : 3 9 9 5 9  9" 3 9 5 9 95 6  typical characteristics, 135 ? 175 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?89 mrf1513t1 motorola wireless rf product device data typical characteristics, 135 ? 175 mhz  $!   /1 /1 3  11< " " " a3 )a449)9@ah 5" " " 5 a3 )a449)9@ah figure 22. gain versus output power   /1 /1 3  11< 5  6 figure 23. drain efficiency versus output power   )a0: " figure 24. output power versus biasing current     : <) 9/33)1 
 figure 25. drain efficiency versus biasing current 7"    : <) 9/33)1 
 figure 26. output power versus supply voltage 7      8 0:
   "
    0&   8 0:
  8 0:
   "
    6" "" "" "    5 "       0&     0& 5"" "" 6" 6 5" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1513t1 5?90 motorola wireless rf product device data z in = complex conjugate of source impedance with parallel 15 ? resistor and 130 pf capacitor in series with gate. (see figure 19). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. note: z ol * was chosen based on tradeoffs between gain, drain ef ficiency, and device stability. figure 28. series equivalent input and output impedance z in = complex conjugate of source impedance with parallel 15 ? resistor and 130 pf capacitor in series with gate. (see figure 10). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 450 4.64 +j5.82 13.11 +j2.15 z in = complex conjugate of source impedance with parallel 15 ? resistor and 120 pf capacitor in series with gate. (see figure 1). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %.         "
   5  470 5.42 +j6.34 12.16 +j3.26 500 5.96 +j5.45 11.03 +j5.42 520 4.28 +j4.94 10.99 +j7.18 f mhz z in ? z ol * ? 400 4.72 +j4.38 12.57 +j1.88         "
   5  440 4.88 +j6.34 11.21 +j5.87 470 3.22 +j5.24 9.82 +j8.63 f mhz z in ? z ol * ? 135 16.55 +j1.82 22.01 +j10.32         "
   5  155 15.59 +j5.38 22.03 +j8.07 175 15.55 +j9.43 22.08 +j6.85   " ?        6 $! 5 5   6 $!   "" $! 6"   "" $! 6"        " ?   " $!    "   " $!  "    # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?91 mrf1513t1 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 12.5 vdc) i dq = 50 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.93 ?94 22.09 125 0.044 33 0.77 ?81 100 0.81 ?131 12.78 101 0.052 6 0.61 ?115 200 0.76 ?153 6.31 81 0.047 ?10 0.59 ?135 300 0.76 ?160 3.92 69 0.044 ?19 0.64 ?142 400 0.77 ?164 2.74 60 0.040 ?26 0.70 ?147 500 0.79 ?167 1.99 54 0.036 ?31 0.75 ?151 600 0.80 ?169 1.55 48 0.034 ?37 0.80 ?155 700 0.81 ?171 1.25 44 0.028 ?40 0.82 ?158 800 0.82 ?172 1.02 38 0.027 ?42 0.86 ?161 900 0.83 ?173 0.85 35 0.017 ?42 0.88 ?163 1000 0.84 ?175 0.70 29 0.018 ?49 0.91 ?166 i dq = 500 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.84 ?127 32.57 112 0.025 17 0.64 ?130 100 0.80 ?152 17.23 97 0.025 13 0.64 ?153 200 0.78 ?166 8.62 85 0.025 ?9 0.65 ?163 300 0.78 ?171 5.58 79 0.023 ?9 0.67 ?166 400 0.78 ?173 4.08 72 0.022 ?9 0.69 ?166 500 0.78 ?175 3.14 68 0.020 ?10 0.71 ?167 600 0.79 ?176 2.55 63 0.022 ?15 0.74 ?168 700 0.79 ?177 2.14 60 0.019 ?20 0.76 ?168 800 0.80 ?178 1.80 54 0.018 ?31 0.79 ?170 900 0.81 ?178 1.54 51 0.015 ?25 0.80 ?170 1000 0.82 ?179 1.31 46 0.012 ?36 0.81 ?172 i dq = 1 a f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.84 ?129 32.57 111 0.023 24 0.61 ?137 100 0.80 ?153 17.04 97 0.024 13 0.64 ?156 200 0.78 ?167 8.52 85 0.023 5 0.65 ?165 300 0.77 ?172 5.53 79 0.020 ?7 0.67 ?167 400 0.77 ?174 4.06 73 0.020 ?11 0.69 ?167 500 0.78 ?175 3.13 69 0.021 ?9 0.72 ?167 600 0.78 ?177 2.54 64 0.017 ?26 0.74 ?168 700 0.78 ?177 2.13 60 0.017 ?14 0.75 ?168 800 0.79 ?178 1.81 55 0.015 ?23 0.78 ?170 900 0.80 ?178 1.54 51 0.013 ?31 0.79 ?170 1000 0.80 ?179 1.30 46 0.011 ?17 0.80 ?172 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1513t1 5?92 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf and uhf portable power amplifier applica- tions. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?93 mrf1513t1 motorola wireless rf product device data mounting the specified maximum thermal resistance of 4 c/w as- sumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two?port stability analysis with this device?s s?parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1517t1 5?94 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets the mrf1517t1 is designed for broadband commercial and industrial applications at frequencies to 520 mhz. the high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5 volt portable fm equipment. ? specified performance @ 520 mhz, 7.5 volts output power ? 8 watts power gain ? 11 db efficiency ? 55% ? characterized with series equivalent large?signal impedance parameters ? excellent thermal stability ? capable of handling 20:1 vswr, @ 9.5 vdc, 520 mhz, 2 db overdrive ? broadband uhf/vhf demonstration amplifier information available upon request ? rf power plastic surface mount package ? available in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage (1) v dss 25 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 4 adc total device dissipation @ t c = 25 c (2) derate above 25 c p d 62.5 0.50 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2 c/w (1) not designed for 12.5 volt applications. (2) calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 520 mhz, 8 w, 7.5 v lateral n?channel broadband rf power mosfet case 466?02, style 1 (pld?1.5) plastic   < t j? t c r jc rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?95 mrf1517t1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 35 vdc, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 10 vdc, v ds = 0) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 7.5 vdc, i d = 120 adc) v gs(th) 1.0 1.7 2.1 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.5 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs 0.9 ? ? s dynamic characteristics input capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c iss ? 66 ? pf output capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c oss ? 38 ? pf reverse transfer capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c rss ? 6 ? pf functional tests (in motorola test fixture) common?source amplifier power gain (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 520 mhz) g ps 10 11 ? db drain efficiency (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 520 mhz) 50 55 ? % f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1517t1 5?96 motorola wireless rf product device data figure 1. 480 ? 520 mhz broadband test circuit   96 35 97 9 3 34 ) /1 34 /1 /1  5  9 95 9 /1 6 8 "    7 ) 97 : ) ; 95 9 9 b1, b2 short ferrite bead, fair rite products (2743021446) c1 300 pf, 100 mil chip capacitor c2, c3, c4, c10, c12, c13 0 to 20 pf, trimmer capacitor c5, c11 43 pf, 100 mil chip capacitor c6, c18 120 pf, 100 mil chip capacitor c7, c15 10 f, 50 v electrolytic capacitor c8, c16 0.1 f, 100 mil chip capacitor c9, c17 1,000 pf, 100 mil chip capacitor c14 330 pf, 100 mil chip capacitor l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mount r1 15 ? , 0805 chip resistor r2 1.0 k ? , 1/8 w resistor r3 33 k ? , 1/2 w resistor z1 0.315 x 0.080 microstrip z2 1.415 x 0.080 microstrip z3 0.322 x 0.080 microstrip z4 0.022 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.050 x 0.080 microstrip z8 0.625 x 0.080 microstrip z9 0.800 x 0.080 microstrip z10 0.589 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9   9 ; 98 : 3 9 96 9 9 9" typical characteristics, 480 ? 520 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?97 mrf1517t1 motorola wireless rf product device data typical characteristics, 480 ? 520 mhz p in = 27 dbm    6 0&    /1 /1 3  11< " " 7"  a3 )a449)9@ah 5" " " 5 a3 )a449)9@ah figure 4. gain versus output power   /1 /1 3  11< 7   figure 5. drain efficiency versus output power   )a0: figure 6. output power versus biasing current     : <) 9/33)1 
 " figure 7. drain efficiency versus biasing current 7"    : <) 9/33)1 
 figure 8. output power versus supply voltage    p in = 27 dbm     "
f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1517t1 5?98 motorola wireless rf product device data figure 10. 400 ? 440 mhz broadband test circuit   9 35 96 9 3 34 ) /1 34 /1 /1  5  9 95 95 /1  7 8   6 ) 96 : ) ; 9 9 9 b1, b2 short ferrite bead, fair rite products (2743021446) c1, c13 300 pf, 100 mil chip capacitor c2, c3, c4, c10, c11, c12 0 to 20 pf, trimmer capacitor c5, c17 130 pf, 100 mil chip capacitor c6, c14 10 f, 50 v electrolytic capacitor c7, c15 0.1 f, 100 mil chip capacitor c8, c16 1,000 pf, 100 mil chip capacitor c9 33 pf, 100 mil chip capacitor l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mount r1 12 ? , 0805 chip resistor r2 1.0 k ? , 1/8 w resistor r3 33 k ? , 1/2 w resistor z1 0.617 x 0.080 microstrip z2 0.723 x 0.080 microstrip z3 0.513 x 0.080 microstrip z4, z5 0.260 x 0.223 microstrip z6 0.048 x 0.080 microstrip z7 0.577 x 0.080 microstrip z8 1.135 x 0.080 microstrip z9 0.076 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9   9 ; 97 : 3 9 9 98 9" typical characteristics, 400 ? 440 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?99 mrf1517t1 motorola wireless rf product device data typical characteristics, 400 ? 440 mhz    /1 /1 3  11< " " 6"  a3 )a449)9@ah 5" " " 5 a3 )a449)9@ah figure 13. gain versus output power   /1 /1 3  11< 6 5 figure 14. drain efficiency versus output power   )a0:  figure 15. output power versus biasing current     : <) 9/33)1 
 " figure 16. drain efficiency versus biasing current 7"    : <) 9/33)1 
 figure 17. output power versus supply voltage    p in = 25.5 dbm    6 0& p in = 25.5 dbm     "
f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1517t1 5?100 motorola wireless rf product device data figure 19. 440 ? 480 mhz broadband test circuit   9 35 96 9 3 34 ) /1 34 /1 /1  5  9 95 95 /1  7 8   6 ) 96 : ) ; 9 9 9 b1, b2 short ferrite bead, fair rite products (2743021446) c1 240 pf, 100 mil chip capacitor c2, c3, c4, c10, c11, c12 0 to 20 pf, trimmer capacitor c5, c17 130 pf, 100 mil chip capacitor c6, c14 10 mf, 50 v electrolytic capacitor c7, c15 0.1 mf, 100 mil chip capacitor c8, c16 1,000 pf, 100 mil chip capacitor c9 39 pf, 100 mil chip capacitor c13 330 pf, 100 mil chip capacitor l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mount r1 15 ? , 0805 chip resistor r2 1.0 k ? , 1/8 w resistor r3 33 k ? , 1/2 w resistor z1 0.471 x 0.080 microstrip z2 1.082 x 0.080 microstrip z3 0.372 x 0.080 microstrip z4, z5 0.260 x 0.223 microstrip z6 0.050 x 0.080 microstrip z7 0.551 x 0.080 microstrip z8 0.825 x 0.080 microstrip z9 0.489 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9   9 ; 97 : 3 9 9 98 9" typical characteristics, 440 ? 480 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?101 mrf1517t1 motorola wireless rf product device data typical characteristics, 440 ? 480 mhz    /1 /1 3  11< " " 6"  a3 )a449)9@ah 5" " " 5 a3 )a449)9@ah figure 22. gain versus output power   /1 /1 3  11< 6 5 figure 23. drain efficiency versus output power   )a0:  figure 24. output power versus biasing current     : <) 9/33)1 
 " figure 25. drain efficiency versus biasing current 7"    : <) 9/33)1 
 figure 26. output power versus supply voltage    mrf1517t1 5?102 motorola wireless rf product device data z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. note: z ol * was chosen based on tradeoffs between gain, drain ef ficiency, and device stability. figure 28. series equivalent input and output impedance z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 440 1.62 +j3.41 3.25 +j0.98 z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %.    6      "
   7  460 1.85 +j3.35 3.05 +j0.93 480 1.91 +j3.31 2.54 +j0.84 f mhz z in ? z ol * ? 480 1.06 +j1.82 3.51 +j0.99    6      "
   7  500 0.97 +j2.01 2.82 +j0.75 520 0.975 +j2.37 1.87 +j1.03 f mhz z in ? z ol * ? 400 1.96 +j3.32 2.52 +j0.39 420 2.31 +j3.56 2.61 +j0.64 440 1.60 +j3.45 2.37 +j1.04 "   " ?     7" $! ""   " ?     " $!    7"   " ?     " $!         " $! ""    6      "
   7  "   7" $!   7" $! " # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?103 mrf1517t1 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 7.5 vdc) i dq = 150 ma f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.84 ?152 17.66 97 0.016 0 0.77 ?167 100 0.84 ?164 8.86 85 0.016 5 0.78 ?172 200 0.86 ?170 4.17 72 0.015 ?5 0.79 ?173 300 0.88 ?171 2.54 62 0.014 ?8 0.80 ?172 400 0.90 ?172 1.72 55 0.013 ?25 0.83 ?172 500 0.92 ?172 1.28 50 0.013 ?10 0.84 ?172 600 0.94 ?173 0.98 46 0.014 ?22 0.86 ?171 700 0.95 ?173 0.76 41 0.010 ?30 0.86 ?172 800 0.96 ?174 0.61 38 0.011 ?14 0.86 ?171 900 0.96 ?175 0.50 33 0.011 ?31 0.85 ?172 1000 0.97 ?175 0.40 31 0.006 55 0.88 ?171 i dq = 800 ma f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.90 ?165 20.42 94 0.018 1 0.76 ?164 100 0.89 ?172 10.20 87 0.015 ?7 0.77 ?170 200 0.90 ?175 4.96 79 0.015 ?12 0.77 ?172 300 0.90 ?176 3.17 73 0.017 ?2 0.80 ?171 400 0.91 ?176 2.26 67 0.013 1 0.82 ?172 500 0.92 ?176 1.75 63 0.011 ?6 0.83 ?171 600 0.93 ?176 1.39 59 0.012 ?31 0.85 ?171 700 0.94 ?176 1.14 55 0.015 ?34 0.88 ?171 800 0.94 ?176 0.93 51 0.008 ?22 0.87 ?171 900 0.95 ?177 0.78 45 0.007 2 0.87 ?172 1000 0.96 ?177 0.65 43 0.008 ?40 0.90 ?170 i dq = 1.5 a f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.92 ?165 19.90 95 0.017 3 0.76 ?164 100 0.90 ?172 9.93 88 0.018 2 0.77 ?170 200 0.91 ?176 4.84 80 0.016 ?4 0.77 ?172 300 0.91 ?176 3.10 74 0.014 ?11 0.80 ?172 400 0.92 ?176 2.22 68 0.014 ?14 0.81 ?172 500 0.93 ?176 1.73 64 0.016 ?8 0.83 ?171 600 0.94 ?176 1.39 61 0.013 ?24 0.85 ?171 700 0.94 ?176 1.12 56 0.013 ?24 0.87 ?171 800 0.95 ?176 0.93 52 0.009 ?12 0.87 ?171 900 0.96 ?177 0.78 46 0.008 10 0.87 ?173 1000 0.97 ?177 0.64 44 0.012 4 0.89 ?169 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1517t1 5?104 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf and uhf portable power amplifier applica- tions. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?105 mrf1517t1 motorola wireless rf product device data mounting the specified maximum thermal resistance of 2 c/w as- sumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two?port stability analysis with this device?s s?parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1518t1 5?106 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfet the mrf1518t1 is designed for broadband commercial and industrial applications with frequencies to 520 mhz. the high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 12.5 volt mobile fm equipment. ? specified performance @ 520 mhz, 12.5 volts output power ? 8 watts power gain ? 11 db efficiency ? 55% ? capable of handling 20:1 vswr, @ 15.5 vdc, 520 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? rf power plastic surface mount package ? broadband uhf/vhf demonstration amplifier information available upon request ? available in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 40 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 4 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 62.5 0.50 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2 c/w (1) calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 520 mhz, 8 w, 12.5 v lateral n?channel broadband rf power mosfet case 466?02, style 1 (pld?1.5) plastic   < t j? t c r jc rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?107 mrf1518t1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 40 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 10 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 12.5 vdc, i d = 100 a) v gs(th) 1.0 1.6 2.1 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.4 ? vdc dynamic characteristics input capacitance (v ds = 12.5 vdc, v gs = 0, f = 1 mhz) c iss ? 66 ? pf output capacitance (v ds = 12.5 vdc, v gs = 0, f = 1 mhz) c oss ? 33 ? pf reverse transfer capacitance (v ds = 12.5 vdc, v gs = 0, f = 1 mhz) c rss ? 4.5 ? pf functional tests (in motorola test fixture) common?source amplifier power gain (v dd = 12.5 vdc, p out = 8 watts, i dq = 150 ma, f = 520 mhz) g ps 10 11 ? db drain efficiency (v dd = 12.5 vdc, p out = 8 watts, i dq = 150 ma, f = 520 mhz) 50 55 ? % f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1518t1 5?108 motorola wireless rf product device data figure 1. 450 ? 520 mhz broadband test circuit   9 3 96 9 35 34 ) /1 34 /1 /1  5  9 95 9 /1 6 8 "    7 ) 9 : ) ; 9 9" b1, b2 short ferrite beads, fair rite products (2743021446) c1, c12 240 pf, 100 mil chip capacitors c2, c3, c10, c11 0 to 20 pf trimmer capacitors c4 82 pf, 100 mil chip capacitor c5, c16 120 pf, 100 mil chip capacitors c6, c13 10 f, 50 v electrolytic capacitors c7, c14 1,200 pf, 100 mil chip capacitors c8, c15 0.1  f, 100 mil chip capacitors c9 30 pf, 100 mil chip capacitor l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 15 ? chip resistor (0805) r2 51 ? , 1/2 w resistor r3 10 ? chip resistor (0805) r4 33 k ? , 1/8 w resistor z1 0.451 x 0.080 microstrip z2 1.005 x 0.080 microstrip z3 0.020 x 0.080 microstrip z4 0.155 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.065 x 0.080 microstrip z8 0.266 x 0.080 microstrip z9 1.113 x 0.080 microstrip z10 0.433 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9 3 9   95 ; 97 : 3 9 9 98 typical characteristics, 450 ? 520 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?109 mrf1518t1 motorola wireless rf product device data typical characteristics, 450 ? 520 mhz    /1 /1 3  11< " " 7" " a3 )a449)9@ah 5" " " 5  "" $! " $! 6" $! a3 )a449)9@ah figure 4. gain versus output power   /1 /1 3  11< 6 5 figure 5. drain efficiency versus output power   )a0: " figure 6. output power versus biasing current     : <) 9/33)1 
 " figure 7. drain efficiency versus biasing current 6"    : <) 9/33)1 
  figure 8. output power versus supply voltage 7        "
   0:
    0&    0:
    "
   0:
    0& 6 78"  6 78" " " 6"     0& 7""  " 7"" " 5   5  7 " 8  5    6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1518t1 5?110 motorola wireless rf product device data figure 10. 400 ? 470 mhz broadband test circuit   97 3 98 96 35 34 ) /1 34 /1 /1  5  6 9 95 9 /1 7 "     8 ) 97 : ) ; 95 9 9 b1, b2 short ferrite beads, fair rite products (2743021446) c1, c14 240 pf, 100 mil chip capacitors c2, c3, c4, c11, c12, c13 0 to 20 pf trimmer capacitors c5 30 pf, 100 mil chip capacitor c6 47 pf, 100 mil chip capacitor c7, c18 120 pf, 100 mil chip capacitors c8, c15 10 f, 50 v electrolytic capacitors c9, c16 1,200 pf, 100 mil chip capacitors c10, c17 0.1 f, 100 mil chip capacitors l1 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 15 ? chip resistor (0805) r2 51 ? , 1/2 w resistor r3 10 ? chip resistor (0805) r4 33 k ? , 1/8 w resistor z1 0.476 x 0.080 microstrip z2 0.724 x 0.080 microstrip z3 0.348 x 0.080 microstrip z4 0.048 x 0.080 microstrip z5 0.175 x 0.080 microstrip z6, z7 0.260 x 0.223 microstrip z8 0.239 x 0.080 microstrip z9 0.286 x 0.080 microstrip z10 0.806 x 0.080 microstrip z11 0.553 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper  9 9 3 9   9 ; 9" : 3 9 96 9 typical characteristics, 400 ? 470 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?111 mrf1518t1 motorola wireless rf product device data typical characteristics, 400 ? 470 mhz " $!    /1 /1 3  11< " " 6" " a3 )a449)9@ah 5" " " 5  a3 )a449)9@ah figure 13. gain versus output power   /1 /1 3  11< 6 5 figure 14. drain efficiency versus output power   )a0: " figure 15. output power versus biasing current     : <) 9/33)1 
 " figure 16. drain efficiency versus biasing current 6"    : <) 9/33)1 
  figure 17. output power versus supply voltage 7        "
  7 0:
    0&   7 0:
    "
  7 0:
 7 6 "   8 " " 7" 7 6 "  8 7"" " 7 7"" " 5 "    "  8 "  " 5  5      0&     0& f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1518t1 5?112 motorola wireless rf product device data figure 19. 135 ? 175 mhz broadband test circuit   96 3 97 9 35 34 ) /1 34 /1 /1   9 95 /1 7 8 "    ) 96 : ) ; 9 9 b1, b2 short ferrite beads, fair rite products (2743021446) c1, c13 330 pf, 100 mil chip capacitors c2, c4, c11 0 to 20 pf trimmer capacitors c3 12 pf, 100 mil chip capacitor c5 43 pf, 100 mil chip capacitor c6, c17 75 pf, 100 mil chip capacitors c7, c14 10 f, 50 v electrolytic capacitors c8, c15 1,200 pf, 100 mil chip capacitors c9, c16 0.1 f, 100 mil chip capacitors c10 75 pf, 100 mil chip capacitor c12 13 pf, 100 mil chip capacitor l1 26 nh, 4 turn, coilcraft l2 5 nh, 2 turn, coilcraft l3 33 nh, 5 turn, coilcraft l4 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 15  chip resistor (0805) r2 56  , 1/4 w carbon resistor r3 100  chip resistor (0805) r4 33 k  , 1/8 w carbon resistor z1 0.115 x 0.080 microstrip z2 0.255 x 0.080 microstrip z3 1.037 x 0.080 microstrip z4 0.192 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.125 x 0.080 microstrip z8 0.962 x 0.080 microstrip z9 0.305 x 0.080 microstrip z10 0.155 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper    9 ; 98 : 3 9 9 5 9  9" 3 9 5 9 95 6  typical characteristics, 135 ? 175 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?113 mrf1518t1 motorola wireless rf product device data typical characteristics, 135 ? 175 mhz  $!    /1 /1 3  11< " " 7" " a3 )a449)9@ah 5" " " 8 5 a3 )a449)9@ah figure 22. gain versus output power   /1 /1 3  11< 8 6 6 figure 23. drain efficiency versus output power   )a0: " figure 24. output power versus biasing current     : <) 9/33)1 
 " figure 25. drain efficiency versus biasing current 6"    : <) 9/33)1 
  figure 26. output power versus supply voltage 7        "
   0:
    0&    0:
    "
   0:
7 6 "  8 5 " 6   7  6" " 7 7"" 7"" " 5 "    " 7 8 "     6     0&     0& f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1518t1 5?114 motorola wireless rf product device data z in = complex conjugate of source impedance with parallel 15 ? resistor and 43 pf capacitor in series with gate. (see figure 19). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. note: z ol * was chosen based on tradeoffs between gain, drain ef ficiency, and device stability. figure 28. series equivalent input and output impedance   " ? z in = complex conjugate of source impedance with parallel 15 ? resistor and 47 pf capacitor in series with gate. (see figure 10). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 450 4.9 +j2.85 6.42 +j3.23 z in = complex conjugate of source impedance with parallel 15 ? resistor and 82 pf capacitor in series with gate. (see figure 1). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %.          "
   7  470 4.85 +j3.71 4.59 +j3.61 500 4.63 +j3.84 4.72 +j3.12 520 3.52 +j3.92 3.81 +j3.27 f mhz z in ? z ol * ? 400 4.28 +j2.36 4.41 +j0.67          "
   7  440 6.45 +j5.13 4.14 +j2.53 470 5.91 +j3.34 3.92 +j4.02 f mhz z in ? z ol * ? 135 18.31 ?j0.76 8.97 +j2.62          "
   7  155 17.72 +j1.85 9.69 +j2.81 175 18.06 +j5.23 7.94 +j1.14   5 $! 6      5   6 $!   6" $!   ""    ""   6" $!   " ? "    " $!      "    " $! # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?115 mrf1518t1 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 12.5 vdc) i dq = 150 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.88 ?148 18.91 99 0.033 11 0.67 ?144 100 0.85 ?163 9.40 86 0.033 ?6 0.66 ?158 200 0.85 ?170 4.47 73 0.026 ?17 0.69 ?162 300 0.87 ?171 2.72 64 0.025 ?28 0.74 ?163 400 0.88 ?172 1.85 56 0.021 ?21 0.79 ?164 500 0.90 ?173 1.35 52 0.019 ?30 0.83 ?165 600 0.92 ?173 1.04 47 0.014 ?26 0.85 ?167 700 0.93 ?174 0.83 44 0.015 ?39 0.88 ?168 800 0.94 ?175 0.68 39 0.014 ?31 0.90 ?169 900 0.94 ?175 0.55 36 0.010 ?41 0.91 ?170 1000 0.96 ?176 0.46 30 0.011 ?38 0.95 ?170 i dq = 800 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.90 ?159 20.80 97 0.020 14 0.73 ?162 100 0.88 ?169 10.35 88 0.018 1 0.74 ?169 200 0.88 ?174 5.09 79 0.017 ?9 0.75 ?171 300 0.89 ?175 3.23 73 0.015 ?18 0.77 ?171 400 0.89 ?175 2.30 67 0.015 ?17 0.80 ?171 500 0.90 ?176 1.74 63 0.014 ?22 0.82 ?170 600 0.91 ?176 1.39 59 0.014 ?19 0.83 ?171 700 0.92 ?176 1.16 55 0.009 ?23 0.85 ?171 800 0.93 ?176 0.96 50 0.011 ?14 0.87 ?172 900 0.94 ?177 0.80 46 0.007 4 0.88 ?173 1000 0.94 ?177 0.67 41 0.010 ?15 0.89 ?173 i dq = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.91 ?159 20.18 97 0.015 11 0.73 ?165 100 0.89 ?169 10.05 89 0.016 ?5 0.74 ?171 200 0.88 ?174 4.93 80 0.015 ?3 0.75 ?172 300 0.89 ?175 3.14 73 0.014 ?14 0.78 ?172 400 0.89 ?176 2.24 67 0.014 ?20 0.80 ?171 500 0.90 ?176 1.70 64 0.014 ?22 0.82 ?170 600 0.92 ?176 1.36 59 0.010 ?16 0.84 ?171 700 0.92 ?176 1.13 55 0.013 ?10 0.85 ?171 800 0.93 ?177 0.94 50 0.008 ?13 0.87 ?172 900 0.94 ?177 0.78 46 0.013 ?26 0.87 ?173 1000 0.94 ?178 0.65 41 0.007 8 0.87 ?172 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1518t1 5?116 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf and uhf portable power amplifier applica- tions. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?117 mrf1518t1 motorola wireless rf product device data mounting the specified maximum thermal resistance of 2 c/w as- sumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two?port stability analysis with this device?s s?parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1535t1 mrf1535ft1 5?118 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies to 520 mhz. the high gain and broadband performance of these devices make them ideal for large?signal, common source amplifier applications in 12.5 volt mobile fm equipment. ? specified performance @ 520 mhz, 12.5 volts output power ? 35 watts power gain ? 10.0 db efficiency ? 50% ? capable of handling 20:1 vswr, @ 15.6 vdc, 520 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? broadband?full power across the band: 135?175 mhz 400?470 mhz 450?520 mhz ? broadband uhf/vhf demonstration amplifier information available upon request ? in tape and reel. t1 suffix = 500 units per 44 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 40 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 6 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 135 0.50 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.90 c/w (1) calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 520 mhz, 35 w, 12.5 v lateral n?channel broadband rf power mosfets case 1264?08, style 1 to?272 plastic mrf1535t1 case 1264a?02, style 1 to?272 straight lead plastic mrf1535ft1 t j? t c r jc rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?119 mrf1535t1 mrf1535ft1 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 60 ? ? vdc zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 10 vdc, v ds = 0 vdc) i gss ? ? 0.3 adc on characteristics gate threshold voltage (v ds = 12.5 vdc, i d = 400 a) v gs(th) 1 ? 2.6 vdc drain?source on?voltage (v gs = 5 vdc, i d = 0.6 a) r ds(on) ? ? 0.7 ? drain?source on?voltage (v gs = 10 vdc, i d = 2.0 adc) v ds(on) ? ? 1 vdc dynamic characteristics input capacitance (includes input matching capacitance) (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c iss ? ? 250 pf output capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c oss ? ? 150 pf reverse transfer capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c rss ? ? 20 pf rf characteristics (in motorola test fixture) common?source amplifier power gain (v dd = 12.5 vdc, p out = 35 watts, i dq = 500 ma) f = 520 mhz g ps 10 ? ? db drain efficiency (v dd = 12.5 vdc, p out = 35 watts, i dq = 500 ma) f = 520 mhz 50 ? ? % load mismatch (v dd = 15.6 vdc, f = 520 mhz, 2 db input overdrive, vswr 20:1 at all phase angles) no degradation in output power before and after test f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1535t1 mrf1535ft1 5?120 motorola wireless rf product device data figure 1. 135 ? 175 mhz broadband test circuit   9" 3 9 98 35 34 ) /1 34 /1 / 1  5  9 9 9" /1 6 8 "    7 ) 95 : ) ; 9 b1 ferroxcube #vk200 c1, c9, c20, c23 330 pf, 100 mil chip capacitors c2, c5 0 to 20 pf trimmer capacitors c3, c15 33 pf, 100 mil chip capacitors c4, c6, c19 18 pf, 100 mil chip capacitors c7 160 pf, 100 mil chip capacitor c8 240 pf, 100 mil chip capacitor c10, c21 10 f, 50 v electrolytic capacitors c11, c22 470 pf, 100 mil chip capacitors c12, c13 150 pf, 100 mil chip capacitors c14 110 pf, 100 mil chip capacitor c16 68 pf, 100 mil chip capacitor c17 120 pf, 100 mil chip capacitor c18 51 pf, 100 mil chip capacitor l1 17.5 nh, coilcraft #a05t l2 5 nh, coilcraft #a02t l3 1 turn, #26 awg, 0.250 id l4 1 turn, #26 awg, 0.240 id l5 4 turn, #24 awg, 0.180 id n1, n2 type n flange mounts r1 6.5 ? , 1/4 w chip resistor r2 39 ? chip resistor (0805) r3 1.2 k ? , 1/8 w chip resistor r4 33 k ? , 1/4 w chip resistor z1 0.970 x 0.080 microstrip z2 0.380 x 0.080 microstrip z3 0.190 x 0.080 microstrip z4 0.160 x 0.080 microstrip z5, z6 0.110 x 0.200 microstrip z7 0.490 x 0.080 microstrip z8 0.250 x 0.080 microstrip z9 0.320 x 0.080 microstrip z10 0.240 x 0.080 microstrip board glass teflon ? , 31 mils  95 3 97   9 ; 3 9 5   96 9 9 9 9 95 9 96 9 97 98  typical characteristics, 135 ? 175 mhz   /1 /1 3  11< 3a) /1a31/3)a< 5?121 mrf1535t1 mrf1535ft1 motorola wireless rf product device data typical characteristics, 135 ? 175 mhz   /1 /1 3  11< figure 4. gain versus output power   /1 /1 3  11< figure 5. drain efficiency versus output power  )a0: figure 6. output power versus biasing current    : <) 9/33)1 
 figure 7. drain efficiency versus biasing current    : <) 9/33)1 
 figure 8. output power versus supply voltage    6 $!  $! 5 $!     0&   5" 0:
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mrf1535t1 mrf1535ft1 5?122 motorola wireless rf product device data figure 10. 450 ? 520 mhz broadband test circuit b1 ferroxcube vk200 c1 160 pf, 100 mil chip capacitor c2 3 pf, 100 mil chip capacitor c3 3.6 pf, 100 mil chip capacitor c4 2.2 pf, 100 mil chip capacitor c5 10 pf, 100 mil chip capacitor c6, c7 16 pf, 100 mil chip capacitors c8, c15, c16 27 pf, 100 mil chip capacitors c9 43 pf, 100 mil chip capacitor c10, c14, c25 160 pf, 100 mil chip capacitors c11, c22 10 f, 50 v electrolytic capacitors c12, c24 1,200 pf, 100 mil chip capacitors c13, c23 0.1 f, 100 mil chip capacitors c17, c18 24 pf, 100 mil chip capacitors c19 160 pf, 100 mil chip capacitor c20 8.2 pf, 100 mil chip capacitor c21 1.8 pf, 100 mil chip capacitor l1 47.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 500 ? chip resistor (0805) r2 1 k ? chip resistor (0805) r3 33 k ? , 1/8 w chip resistor z1 0.480 x 0.080 microstrip z2 1.070 x 0.080 microstrip z3 0.290 x 0.080 microstrip z4 0.160 x 0.080 microstrip z5, z8 0.120 x 0.080 microstrip z6, z7 0.120 x 0.223 microstrip z9 1.380 x 0.080 microstrip z10 0.625 x 0.080 microstrip board glass teflon ? , 31 mils   9 35 9 9" 3 34 ) /1 34 /1 /1 6 9 98 7 "  8 ) )   9 ; 95 3 95 9 9 : /1   5    96 9 98 97 9 9 95 9 97 96 9 9 9 9" ; 9 typical characteristics, 450 ? 520 mhz " " " " " 5" " " 5     /1 /1 3  11< 3a) /1a31/3)a< 5?123 mrf1535t1 mrf1535ft1 motorola wireless rf product device data typical characteristics, 450 ? 520 mhz   /1 /1 3  11< figure 13. gain versus output power   /1 /1 3  11< figure 14. drain efficiency versus output power  )a0: figure 15. output power versus biasing current    : <) 9/33)1 
 figure 16. drain efficiency versus biasing current    : <) 9/33)1 
 figure 17. output power versus supply voltage     " $! 6" $! "" $! " $! "" " 7" "" 6" " " """ 7"" "" ""     0&   5 0:
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mrf1535t1 mrf1535ft1 5?124 motorola wireless rf product device data note: z ol * was chosen based on tradeoffs between gain, drain ef ficiency, and device stability. figure 19. series equivalent input and output impedance   " ? z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 135 5.0 + j0.9 1.7 + j0.2 z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %.          "
   5  155 5.0 + j0.9 1.7 + j0.2 175 3.0 + j1.0 1.3 + j0.1 f mhz z in ? z ol * ? 450 0.8 ? j1.4 1.0 ? j0.8         ""
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5?125 mrf1535t1 mrf1535ft1 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 12.5 vdc) i dq = 250 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.89 ?173 8.496 83 0.014 ?26 0.76 ?170 100 0.90 ?175 3.936 72 0.014 ?14 0.79 ?170 150 0.91 ?175 2.429 63 0.011 ?23 0.82 ?170 200 0.92 ?175 1.627 57 0.010 ?44 0.86 ?170 250 0.94 ?176 1.186 53 0.007 ?16 0.88 ?170 300 0.95 ?176 0.888 49 0.005 ?44 0.91 ?171 350 0.96 ?176 0.686 48 0.005 36 0.92 ?170 400 0.96 ?176 0.568 44 0.005 ?1 0.94 ?171 450 0.97 ?176 0.457 44 0.004 49 0.94 ?172 500 0.97 ?176 0.394 44 0.003 ?51 0.95 ?171 550 0.98 ?176 0.332 42 0.001 31 0.95 ?173 600 0.98 ?177 0.286 41 0.013 99 0.94 ?173 i dq = 1.0 a f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.90 ?173 8.49 83 0.006 ?39 0.86 ?176 100 0.90 ?175 3.92 72 0.009 ?5 0.86 ?176 150 0.91 ?175 2.44 63 0.006 7 0.87 ?176 200 0.92 ?175 1.62 57 0.008 21 0.88 ?175 250 0.94 ?176 1.19 53 0.006 8 0.89 ?174 300 0.95 ?176 0.89 48 0.008 3 0.89 ?174 350 0.96 ?176 0.69 48 0.007 48 0.91 ?174 400 0.96 ?176 0.57 44 0.004 41 0.93 ?173 450 0.97 ?176 0.46 44 0.004 43 0.93 ?173 500 0.97 ?176 0.39 44 0.003 57 0.94 ?173 550 0.98 ?176 0.33 41 0.006 62 0.94 ?174 600 0.98 ?177 0.28 41 0.009 96 0.93 ?173 i dq = 2.0 a f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.94 ?176 9.42 88 0.005 ?72 0.89 ?177 100 0.94 ?178 4.56 82 0.005 4 0.89 ?177 150 0.94 ?178 2.99 78 0.003 7 0.89 ?177 200 0.94 ?178 2.14 74 0.005 17 0.90 ?176 250 0.95 ?178 1.67 71 0.004 40 0.90 ?175 300 0.95 ?178 1.32 67 0.007 35 0.91 ?175 350 0.95 ?178 1.08 67 0.005 57 0.92 ?174 400 0.96 ?178 0.93 63 0.003 50 0.93 ?173 450 0.96 ?178 0.78 62 0.007 68 0.93 ?173 500 0.96 ?177 0.68 61 0.004 99 0.94 ?173 550 0.97 ?177 0.59 58 0.008 78 0.93 ?175 600 0.97 ?178 0.51 57 0.009 92 0.92 ?174 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1535t1 mrf1535ft1 5?126 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf a nd uhf mobile power amplifier applications. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to in- sure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?127 mrf1535t1 mrf1535ft1 motorola wireless rf product device data mounting the specified maximum thermal resistance of 0.9 c/w as- sumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two?port stability analysis with this device?s s?parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1550t1 mrf1550ft1 5?128 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies to 175 mhz. the high gain and broadband performance of these devices make them ideal for large?signal, common source amplifier applications in 12.5 volt mobile fm equipment. ? specified performance @ 175 mhz, 12.5 volts output power ? 50 watts power gain ? 12 db efficiency ? 50% ? capable of handling 20:1 vswr, @ 15.6 vdc, 175 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? broadband?full power across the band: 135?175 mhz ? broadband demonstration amplifier information available upon request ? in tape and reel. t1 suffix = 500 units per 44 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 40 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 12 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 165 0.50 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.75 c/w (1) calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 175 mhz, 50 w, 12.5 v lateral n?channel broadband rf power mosfets case 1264?08, style 1 to?272 plastic mrf1550t1 case 1264a?02, style 1 to?272 straight lead plastic mrf1550ft1 t j? t c r jc rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?129 mrf1550t1 mrf1550ft1 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 10 vdc, v ds = 0 vdc) i gss ? ? 0.5 adc on characteristics gate threshold voltage (v ds = 12.5 vdc, i d = 800 a) v gs(th) 1 ? 3 vdc drain?source on?voltage (v gs = 5 vdc, i d = 1.2 a) r ds(on) ? ? 0.5 ? drain?source on?voltage (v gs = 10 vdc, i d = 4.0 adc) v ds(on) ? ? 1 vdc dynamic characteristics input capacitance (includes input matching capacitance) (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c iss ? ? 500 pf output capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c oss ? ? 250 pf reverse transfer capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c rss ? ? 35 pf rf characteristics (in motorola test fixture) common?source amplifier power gain (v dd = 12.5 vdc, p out = 50 watts, i dq = 500 ma) f = 175 mhz g ps 10 ? ? db drain efficiency (v dd = 12.5 vdc, p out = 50 watts, i dq = 500 ma) f = 175 mhz 50 ? ? % load mismatch (v dd = 15.6 vdc, f = 175 mhz, 2 db input overdrive, vswr 20:1 at all phase angles) no degradation in output power before and after test f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1550t1 mrf1550ft1 5?130 motorola wireless rf product device data figure 1. 135 ? 175 mhz broadband test circuit b1 ferroxcube #vk200 c1 180 pf, 100 mil chip capacitor c2 10 pf, 100 mil chip capacitor c3 33 pf, 100 mil chip capacitor c4, c16 24 pf, 100 mil chip capacitors c5 160 pf, 100 mil chip capacitor c6 240 pf, 100 mil chip capacitor c7, c17 300 pf, 100 mil chip capacitors c8, c18 10 f, 50 v electrolytic capacitors c9, c19 0.1 f, 100 mil chip capacitors c10 470 pf, 100 mil chip capacitor c11, c12 200 pf, 100 mil chip capacitors c13 22 pf, 100 mil chip capacitor c14 30 pf, 100 mil chip capacitor c15 6.8 pf, 100 mil chip capacitor c20 1,000 pf, 100 mil chip capacitor l1 18.5 nh, coilcraft #a05t l2 5 nh, coilcraft #a02t l3 1 turn, #24 awg, 0.250 id l4 1 turn, #26 awg, 0.240 id l5 3 turn, #24 awg, 0.180 id n1, n2 type n flange mounts r1 5.1 ? , 1/4 w chip resistor r2 39 ? chip resistor (0805) r3 1 k ? , 1/8 w chip resistor r4 33 k ? , 1/4 w chip resistor z1 1.000 x 0.080 microstrip z2 0.400 x 0.080 microstrip z3 0.200 x 0.080 microstrip z4 0.200 x 0.080 microstrip z5, z6 0.100 x 0.223 microstrip z7 0.160 x 0.080 microstrip z8 0.260 x 0.080 microstrip z9 0.280 x 0.080 microstrip z10 0.270 x 0.080 microstrip z11 0.730 x 0.080 microstrip board glass teflon ? , 31 mils   97 3 98 96 35 34 ) /1 34 /1 /1  5  9 95 96 /1 6 "    7 ) 9 ) ;  9   97 ; 9" 3 98 9"  9 9   9 95 9 9 9 9 8 9 3 5  typical characteristics   /1 /1 3  11< 3a) /1a31/3)a< 5?131 mrf1550t1 mrf1550ft1 motorola wireless rf product device data typical characteristics " "   /1 /1 3  11< " 7" 5" " " 5" " 6 $!  $! figure 4. gain versus output power   /1 /1 3  11<  "  figure 5. drain efficiency versus output power "  )a0: figure 6. output power versus biasing current    : <) 9/33)1 
 figure 7. drain efficiency versus biasing current 6"    : <) 9/33)1 
 figure 8. output power versus supply voltage       ""
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    0& " " 6" " 7"  " " 6" " 7" 6"     0& 7"" " 6" 7"" "   5 7" 8"  5  6 $!  $! 5 $! 5 $! "" ""    ""
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 $! 6 $! 5 $! a3 )a449)9@ah  a3 )a449)9@ah  a3 )a449)9@ah  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1550t1 mrf1550ft1 5?132 motorola wireless rf product device data z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 135 4.1 + j0.5 1.0 + j0.6         ""
   "  155 4.2 + j1.7 1.2 + j.09 175 3.7 + j2.3 0.7 + j1.1   5 $!   6 $!      " ?     5 $!   6 $! figure 10. series equivalent input and output impedance # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?133 mrf1550t1 mrf1550ft1 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 12.5 vdc) i dq = 500 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.93 ?178 4.817 80 0.009 ?39 0.86 ?176 100 0.94 ?178 2.212 69 0.009 ?3 0.88 ?175 150 0.95 ?178 1.349 61 0.008 ?8 0.90 ?174 200 0.95 ?178 0.892 54 0.006 ?13 0.92 ?174 250 0.96 ?178 0.648 51 0.005 ?7 0.93 ?174 300 0.97 ?178 0.481 47 0.004 ?8 0.95 ?174 350 0.97 ?178 0.370 46 0.005 4 0.95 ?174 400 0.98 ?178 0.304 43 0.001 15 0.97 ?174 450 0.98 ?178 0.245 43 0.005 81 0.97 ?174 500 0.98 ?178 0.209 43 0.003 84 0.97 ?174 550 0.99 ?177 0.178 41 0.007 70 0.98 ?175 600 0.98 ?178 0.149 41 0.010 106 0.96 ?175 i dq = 2.0 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.93 ?177 4.81 80 0.003 ?119 0.93 ?178 100 0.94 ?178 2.20 69 0.006 4 0.93 ?178 150 0.95 ?178 1.35 61 0.003 ?1 0.93 ?177 200 0.95 ?178 0.89 54 0.004 18 0.93 ?176 250 0.96 ?178 0.65 51 0.001 28 0.94 ?176 300 0.97 ?178 0.48 47 0.004 77 0.94 ?175 350 0.97 ?178 0.37 46 0.006 85 0.95 ?175 400 0.98 ?178 0.30 43 0.007 53 0.96 ?174 450 0.98 ?178 0.25 43 0.006 74 0.97 ?174 500 0.98 ?177 0.21 44 0.006 84 0.97 ?174 550 0.99 ?177 0.18 41 0.002 106 0.97 ?175 600 0.98 ?178 0.15 41 0.004 116 0.96 ?174 i dq = 4.0 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.97 ?179 5.04 87 0.002 ?116 0.94 ?179 100 0.96 ?179 2.43 82 0.006 42 0.94 ?178 150 0.96 ?179 1.60 77 0.004 13 0.94 ?177 200 0.96 ?179 1.14 74 0.003 43 0.95 ?176 250 0.97 ?179 0.89 71 0.004 65 0.95 ?175 300 0.97 ?179 0.71 68 0.006 68 0.95 ?175 350 0.97 ?179 0.57 67 0.006 74 0.97 ?174 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1550t1 mrf1550ft1 5?134 motorola wireless rf product device data table 1. common source scattering parameters (v dd = 12.5 vdc) (continued) i dq = 4.0 ma (continued) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 400 0.97 ?179 0.49 63 0.005 58 0.97 ?173 450 0.98 ?178 0.41 63 0.005 73 0.98 ?173 500 0.98 ?178 0.36 62 0.003 128 0.98 ?173 550 0.98 ?178 0.32 58 0.004 57 0.99 ?174 600 0.98 ?178 0.27 58 0.009 83 0.98 ?174 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?135 mrf1550t1 mrf1550ft1 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf a nd uhf mobile power amplifier applications. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to in- sure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1550t1 mrf1550ft1 5?136 motorola wireless rf product device data mounting the specified maximum thermal resistance of 0.75 c/w assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two?port stability analysis with this device?s s?parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?137 mrf1570t1 mrf1570ft1 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed f or broadband commercial and industrial applications with frequen- cies up to 470 mhz. the high gain and broadband performance of these devices make them ideal for large?signal, common source amplifier applica- tions in 12.5 volt mobile fm equipment. ? specified performance @ 470 mhz, 12.5 volts output power ? 70 watts power gain ? 10 db efficiency ? 50% ? capable of handling 20:1 vswr, @ 15.6 vdc, 470 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? broadband?full power across the band: 135?175 mhz 400?470 mhz ? broadband demonstration amplifier information available upon request ? available in tape and reel. t1 suffix = 500 units per 44 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 40 vdc gate?source voltage v gs 20 vdc total device dissipation @ t c = 25 c derate above 25 c p d 165 0.5 watts w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 175 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c2 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.75 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 470 mhz, 70 w, 12.5 v lateral n?channel broadband rf power mosfets case 1366?03, style 1 to?272 split lead plastic mrf1570t1 case 1366a?02, style 1 to?272 straight lead plastic mrf1570ft1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1570t1 mrf1570ft1 5?138 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) i dss ? ? 1 a on characteristics gate threshold voltage (v ds = 12.5 vdc, i d = 0.8 madc) v gs(th) 1.0 ? 3 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2.0 adc) v ds(on) ? ? 1 vdc dynamic characteristics input capacitance (includes input matching capacitance) (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c iss ? ? 500 pf output capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c oss ? ? 250 pf reverse transfer capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c rss ? ? 35 pf rf characteristics (in motorola test fixture) common?source amplifier power gain (v dd = 12.5 vdc, p out = 70 w, i dq = 800 ma) f = 470 mhz g ps 10 ? ? db drain efficiency (v dd = 12.5 vdc, p out = 70 w, i dq = 800 ma) f = 470 mhz 50 ? ? % load mismatch (v dd = 15.6 vdc, f = 470 mhz, 2 db input overdrive, vswr 20:1 at all phase angles) no degradation in output power before and after test f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?139 mrf1570t1 mrf1570ft1 motorola wireless rf product device data figure 1. 135 ? 175 mhz broadband test circuit schematic 34 /1 /1 /1 ;   b1, b2, b3, b4, b5, b6 long ferrite beads, fair rite products c1, c32, c37, c43 270 pf, 100 mil chip capacitors c2, c20, c21 33 pf, 100 mil chip capacitors c3 18 pf, 100 mil chip capacitor c4, c5 30 pf, 100 mil chip capacitors c6, c7 180 pf, 100 mil chip capacitors c8, c9 150 pf, 100 mil chip capacitors c10, c15 300 pf, 100 mil chip capacitors c11, c16, c33, c39 10 f, 50 v electrolytic capacitors c12, c17, c34, c40 0.1 f, 100 mil chip capacitors c13, c18, c35, c41 1000 pf, 100 mil chip capacitors c14, c19, c36, c42 470 pf, 100 mil chip capacitors c22, c23 110 pf, 100 mil chip capacitors c24, c25 68 pf, 100 mil chip capacitors c26, c27 120 pf, 100 mil chip capacitors c28, c29 24 pf, 100 mil chip capacitors c30, c31 27 pf, 100 mil chip capacitors c38, c44 240 pf, 100 mil chip capacitors l1, l2 17.5 nh, 6 turn inductors, coilcraft l3, l4 5 nh, 2 turn inductors, coilcraft l5, l6, l7, l8 1 turn, #18 awg, 0.33 id inductors l9, l10 3 turn, #16 awg, 0.165 id inductors n1, n2 type n flange mounts r1, r2 25.5 ? chip resistors (1206) r3, r4 9.3 ? chip resistors (1206) z1 0.32 x 0.080 microstrip z2, z3 0.46 x 0.080 microstrip z4, z5 0.34 x 0.080 microstrip z6, z7 0.45 x 0.080 microstrip z8, z9, z10, z11 0.28 x 0.240 microstrip z12, z13 0.39 x 0.080 microstrip z14, z15 0.27 x 0.080 microstrip z16, z17 0.25 x 0.080 microstrip z18, z19 0.29 x 0.080 microstrip z20, z21 0.14 x 0.080 microstrip z22 0.32 x 0.080 microstrip board 31 mil glass teflon ?   ; 34 ) /1   ;   ; 9 95 9 9 9" : 3 35    5  7 9 9 97  9 95 9 3 5    6 8 96 98 9 3 : 98 97 96 9 9 957 956 95 95 95 955 "     6 7 8 9" 9 9 9 97 95" 9 95 9 96  5  6  7 8  "  :5 : : : 98 95 9 95 9 9 9" 958 " 95 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1570t1 mrf1570ft1 5?140 motorola wireless rf product device data figure 2. 135 ? 175 mhz broadband test circuit component layout 9 : 9 95 9 9 9 95 9 9   9 96 5  9" 9 97 98 35 3 3 3 9 : 96 97 98 9 957 8 " 956 9" 9 95 95 9 9 9 96 9   97 98 6 7 95" 95 95 955 958 : : :5 : 95 95 95 9 9" 9   )   ) mrf1570t1 typical characteristics, 135 ? 175 mhz 5 $! 6 $!  " $!  " "" "   ) /1 3  11< figure 3. output power versus input power  a/1 /1a 3a 11<     0& 7" " " " 5  7" b" " "   /1 /1 3  11< figure 4. input return loss versus output power b b" b 5 $! 6 $!  $!     0& 8" 6" " " " 5" " ) /1a31/3)a< 5?141 mrf1570t1 mrf1570ft1 motorola wireless rf product device data typical characteristics, 135 ? 175 mhz 8"  7 "   /1 /1 3  11< figure 5. gain versus output power  #2 aa  3a  )a  0:  " 5" " " " 6" 7" 5 $! 6 $!  $!     0& 6    5 8" " 6" "   /1 /1 3  11< figure 6. drain efficiency versus output power a3 )a449)9@ah " " " 5" " 5" " " " 6" 7" 5 $! 6 $!  $!     0& "" " 8" ""    : <) 9/33)1 
 figure 7. output power versus biasing current  a/1 /1a 3a 11< 5 $! 6 $!  $!     0&   5 0:
7" 6" " "" 7"" "" "" """ " ""    : <) 9/33)1 
 figure 8. drain efficiency versus biasing current a3 )a449)9@ah "" "" 5 $! 6 $!  $!     0&   5 0:
"" 7"" "" "" """ 7" " " "  " "" "       7""
7" " " "  5    " "" "       7""
  5  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1570t1 mrf1570ft1 5?142 motorola wireless rf product device data figure 11. 400 ? 470 mhz broadband test circuit schematic b1, b2, b3, b4, b5, b6 long ferrite beads, fair rite products c1, c9, c15, c32 270 pf, 100 mil chip capacitors c2, c3 7.5 pf, 100 mil chip capacitors c4 5.1 pf, 100 mil chip capacitor c5, c6 180 pf, 100 mil chip capacitors c7, c8 47 pf, 100 mil chip capacitors c10, c16, c37, c42 120 pf, 100 mil chip capacitors c11, c17, c33, c38 10 f, 50 v electrolytic capacitors c12, c18, c34, c39 470 pf, 100 mil chip capacitors c13, c19, c35, c40 1200 pf, 100 mil chip capacitors c14, c20, c36, c41 0.1 f, 100 mil chip capacitors c21, c22 33 pf, 100 mil chip capacitors c23, c24 27 pf, 100 mil chip capacitors c25, c26 15 pf, 100 mil chip capacitors c27, c28 2.2 pf, 100 mil chip capacitors c29, c30 6.2 pf, 100 mil chip capacitors c31 1.0 pf, 100 mil chip capacitor l1, l2, l3, l4 1 turn, #18 awg, 0.085 id inductors l5, l6 2 turn, #16 awg, 0.165 id inductors n1, n2 type n flange mounts r1, r2 25.5 ? chip resistors (1206) r3, r4 10 ? chip resistors (1206) z1 0.240 x 0.080 microstrip z2 0.185 x 0.080 microstrip z3, z4 1.500 x 0.080 microstrip z5, z6 0.150 x 0.240 microstrip z7, z8 0.140 x 0.240 microstrip z9, z10 0.140 x 0.240 microstrip z11, z12 0.150 x 0.240 microstrip z13, z14 0.270 x 0.080 microstrip z15, z16 0.680 x 0.080 microstrip z17, z18 0.320 x 0.080 microstrip z19 0.380 x 0.080 microstrip board 31 mil glass teflon ? 34 /1 /1 /1 ;     ; 34 ) /1   ;   ; 9 95 9 9 98 : 3 35  5  6 9 96 9  9 95 9 3   7 97 9 3 : 9" 98 97 96 9 956 9" 95 95 95 955 8  5   5 6  9 95 96 98 9 9 "      7 8 :5 : : : 97 95" 9 9 9" 958 957  95 9 95 9 9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?143 mrf1570t1 mrf1570ft1 motorola wireless rf product device data figure 12. 400 ? 470 mhz broadband test circuit component layout 9 : 9 95 9 9 9 95 9 98 9 9 9 35 3 3 3 96 : 97 98 9"   956 9 9 9 9 9 95 9   96 97 5  98 95" 95 955 957 : : :5 : 95 95 95 9" 9 958   )   ) 9" 9 96 97 95 mrf1570t1 typical characteristics, 400 ? 470 mhz " "" " "" $!   ) /1 3  11< figure 13. output power versus input power  a/1 /1a 3a 11<     0& 7" " " "   5  67 " $! 6" $! 7" b" " "   /1 /1 3  11< figure 14. input return loss versus output power ) /1a31/3)a< mrf1570t1 mrf1570ft1 5?144 motorola wireless rf product device data typical characteristics, 400 ? 470 mhz 7" 6 "   /1 /1 3  11< figure 15. gain versus output power  #2 aa 3a )a0: "" $!     0& " $! 6" $!  5  8 6 " " 5" " " " 6" 7" " 6" "   /1 /1 3  11< figure 16. drain efficiency versus output power a3 )a449)9@ah " " " 5" " " " " 5" " " " 6" "" $!     0& " $! 6" $! "" " 8" ""    : <) 9/33)1 
 figure 17. output power versus biasing current  a/1 /1a 3a 11<     0&   57 0:
"" $! " $! 6" $! 7" 6" " "" 7"" """ "" "" " "" figure 18. drain efficiency versus biasing current a3 )a449)9@ah     0&   57 0:
"" $! " $! 6" $! "" ""    : <) 9/33)1 
 "" 7"" """ "" "" 7" " " " " "" "       7""
"" $! " $! 6" $! 8" 7" 6" " "   5   figure 20. drain efficiency versus supply voltage a3 )a449)9@ah " "" "       7""
"" $! " $! 6" $! 7" " " "   5   f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?145 mrf1570t1 mrf1570ft1 motorola wireless rf product device data figure 21. 450 ? 520 mhz broadband test circuit schematic b1, b2, b3, b4, b5, b6 long ferrite beads, fair rite products c1, c8, c14, c28 270 pf, 100 mil chip capacitors c2, c3 10 pf, 100 mil chip capacitors c4, c5 180 pf, 100 mil chip capacitors c6, c7 47 pf, 100 mil chip capacitors c9, c15, c33, c38 120 pf, 100 mil chip capacitors c10, c16, c29, c34 10 f, 50 v electrolytic capacitors c11, c17, c30, c35 470 pf, 100 mil chip capacitors c12, c18, c31, c36 1200 pf, 100 mil chip capacitors c13, c19, c32, c37 0.1 f, 100 mil chip capacitors c20, c21 22 pf, 100 mil chip capacitors c22, c23 20 pf, 100 mil chip capacitors c24, c25, c26, c27 5.1 pf, 100 mil chip capacitors l1, l2 1 turn, #18 awg, 0.115 id inductors l3, l4 2 turn, #16 awg, 0.165 id inductors n1, n2 type n flange mounts r1, r2 1.0 k ? chip resistors (1206) r3, r4 10 ? chip resistors (1206) z1 0.40 x 0.080 microstrip z2, z3 0.26 x 0.080 microstrip z4, z5 1.35 x 0.080 microstrip z6, z7 0.17 x 0.240 microstrip z8, z9 0.12 x 0.240 microstrip z10, z11 0.14 x 0.240 microstrip z12, z13 0.15 x 0.240 microstrip z14, z15 0.18 x 0.172 microstrip z16, z17 1.23 x 0.080 microstrip z18, z19 0.12 x 0.080 microstrip z20 0.40 x 0.080 microstrip board 31 mil glass teflon ? 34 /1 /1 /1 ;     ; 34 ) /1   ;   ; 95 9 9 9" 97 : 3 35   7 9 9 9  3  6 8 96 9 3 : 98 97 96 9 9 955 98 95 95 95" 98 "     7 5 9" 9 9 9 95  5  6  8 " :5 : : : 96 957 956 95 95 95  97 9 9 9 9 95  5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1570t1 mrf1570ft1 5?146 motorola wireless rf product device data figure 22. 450 ? 520 mhz broadband test circuit component layout 9" : 95 9 9 9 9 95 97 9 9 9 35 3 3 3 9 : 98 97 96 5  955 9" 9 957 9 9 9 95   9 96 97 98 95 : : :5 : 95 95 95" 95 956 95   )   ) 98 9 9 96 mrf1570t1 typical characteristics, 450 ? 520 mhz " "" "   ) /1 3  11< figure 23. output power versus input power  a/1 /1a 3a 11<     0& "" $!  " $! 6" $! " $! 7" " " " 5 67 8" b " "   /1 /1 3  11< figure 24. input return loss versus output power ) /1a31/3)a< 5?147 mrf1570t1 mrf1570ft1 motorola wireless rf product device data typical characteristics, 450 ? 520 mhz 8    /1 /1 3  11< figure 25. gain versus output power  #2 aa 3a )a0: 8" "     0& "" $!  " $! 6" $! " $! " " 5" " " 6" 7" "  5   " " 6"   /1 /1 3  11< figure 26. drain efficiency versus output power a3 )a449)9@ah 8"     0& "" $! 6" $!  " $! " $! " " 5" " " 6" 7" " " " " 5" "" " 8"    : <) 9/33)1 
 figure 27. output power versus biasing current  a/1 /1a 3a 11< "" $!  " $! 6" $! " $!     0&   57 0:
7" 6" " "" 7"" "" "" " 7"    : <) 9/33)1 
 figure 28. drain efficiency versus biasing current "" $!  " $! 6" $! " $!     0&   57 0:
6" " " "" 7"" "" a3 )a449)9@ah 5" "" figure 29. output power versus supply voltage  a/1 /1a 3a 11< "       7""
 " $! 6" $!   5   8" 7" 6" " " " " $! "" $! " 7" figure 30. drain efficiency versus supply voltage a3 )a449)9@ah "       7""
6" $!   5   " $! "" $!  " $! 6" " " f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1570t1 mrf1570ft1 5?148 motorola wireless rf product device data z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. notes: impedance z in was measured with input terminated at 50  . impedance z ol was measured with output terminated at 50  . figure 31. series equivalent input and output impedance f mhz z in ? z ol * ? 450 0.94 ?j1.12 0.61 ?j1.14         "7    6"  470 1.03 ?j1.17 0.62 ?j1.12 500 0.95 ?j1.71 0.75 ?j1.03 520 0.62 ?j1.74 0.77 ?j0.97 f mhz z in ? z ol * ? 400 0.92 ?j0.71 1.05 ?j1.10         "7    6"  440 1.12 ?j1.11 0.83 ?j1.45 470 0.82 ?j0.79 0.59 ?j1.43 f mhz z in ? z ol * ? 135 2.8 +j0.05 0.65 +j0.42         "7    6"  155 3.9 +j0.34 1.01 +j0.63 175 2.4 ?j0.47 0.71 +j0.37     6 $!      6" $!   ?      # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-   6 $!   6" $!   " $!   ?         " $!   5 $!   5 $!   "" $!   "" $!    " $!   " $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?149 mrf1570t1 mrf1570ft1 motorola wireless rf product device data applications information design considerations this device is a common?source, rf power, n?channel enhancement mode, lateral m etal?o xide s emiconductor f ield?e ffect t ransistor (mosfet). motorola application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf a nd uhf mobile power amplifier applications. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to in- sure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate?to?drain (c gd ), and gate?to?source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain?to?source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheet s. the relationships be- tween the inter?terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. ,% 9 02 < ,&* %* 9 (0 9 (2 9 22  9 (0 ; 9 (2 9 22  9 (0 ; 9 02 9 ,22  9 (0 drain characteristics one critical figure of merit for a fet is its static resistance in the full?on condition. this on?resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate?source voltage and drain current. the drain?source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate?to?source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open?cir- cuited or floating should be avoided. these conditions can result in turn?on of the devices due to voltage build?up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate?to?source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate?to?source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate?drain capacitance. if the gate?to?source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate?threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 800 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf1570t1 mrf1570ft1 5?150 motorola wireless rf product device data mounting the specified maximum thermal resistance of 0.75 c/w assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to motorola application note an4005/d, ?thermal management and mounting meth- od for the pld?1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see motorola application note an721, ?impedance matching networks applied to rf power transistors.? large?signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. see motorola application note an215a, ?rf small?signal design using two?port parameters? for a discussion of two port network theory and stability. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?151 mrf6522?70 mrf6522?70r3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm 900 frequency band, the high gain and broadband performance of these devices make them ideal for large?signal, common source amplifier applications in 26 volt base station equipment. ? specified performance @ full gsm band, 921?960 mhz, 26 volts output power, p1db ? 80 watts (typ) power gain @ p1db ? 16 db (typ) efficiency @ p1db ? 58% (typ) ? available in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs 20 vdc drain current ? continuous i d 7 adc total device dissipation @ t c = 25 c derate above 25 c p d 159 0.9 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.1 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 921 ? 960 mhz, 70 w, 26 v lateral n?channel rf power mosfets case 465d?05, style 1 (ni?600) rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf6522?70 mrf6522?70r3 5?152 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 400 madc) v gs(q) 3 4 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.15 0.6 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs 2 3 ? s dynamic characteristics input capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c iss ? 130 ? pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c oss 41 47 52 pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss 2.4 3 3.4 pf functional tests (in motorola test fixture) output power (2) (v dd = 26 vdc, i dq = 400 ma, f = full gsm band 921 ? 960 mhz) p1db 73 80 ? w common?source amplifier power gain @ p1db (min) (2) (v dd = 26 vdc, i dq = 400 ma, f = full gsm band 921 ? 960 mhz) g ps 14 16 18 db drain efficiency @ p out = 50 w (v dd = 26 vdc, i dq = 400 ma, f = full gsm band 921 ? 960 mhz) 1 47 51 ? % drain efficiency @ p1db (2) (v dd = 26 vdc, i dq = 400 ma, f = full gsm band 921 ? 960 mhz) 2 ? 58 ? % input return loss @ p out = 50 w (v dd = 26 vdc, i dq = 400 ma, f = 921 mhz and 960 mhz f = 940 mhz) irl ? ? ? ? ?10 ?15 db output mismatch stress (2) (v dd = 26 vdc, i dq = 400 ma, f = full gsm band 921 ? 960 mhz, vswr = 5:1, all phase angles) no degradation in output power before and after test (1) value excludes the input matching. (2) to meet application requirements, motorola test fixtures have been designed to cover full gsm 900 band ensuring batch?to?ba tch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?153 mrf6522?70 mrf6522?70r3 motorola wireless rf product device data figure 1. mrf6522?70 test circuit schematic 3 3 3 9 9 95 9 98 97 9 9  9"  mrf6522?70 mrf6522?70r3 5?154 motorola wireless rf product device data typical characteristics   /1 /1 3  11<   /1 /1 3  11< 6  " figure 3. power gain versus output power "   " figure 4. power gain versus output power "" " 7" 6   6 "  6" ""  #2 a 3a )a0:  <   0&   8 $! figure 5. output power versus supply voltage figure 6. output power versus supply voltage figure 7. efficiency and output power versus input power ""
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5?155 mrf6522?70 mrf6522?70r3 motorola wireless rf product device data typical characteristics    ) /1 3  11< figure 8. efficiency and output power versus input power " figure 9. power gain and efficiency versus input power 6" " 5" figure 10. power gain and efficiency versus input power " " " " " 8  a449)9@ah  #2 a 3a )a0: 7 6    5  <   0&   8 $!   #2   ) /1 3  11< 7" " " " " 6" "  a449)9@ah " "  " 5" "  <   0&    ""
  8" $! " 7" 6" " " " 5" " " "  a/1 /1a 3a 11<  58   "6" "57 " " "" ""5 ""   ) /1 3  11< " 6" " 5" " " " " " 8  a449)9@ah  #2 a 3a )a0: 7 6    5  <   0&   8" $!   #2 56"   " "5 "7 "" "" ""5 "" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf6522?70 mrf6522?70r3 5?156 motorola wireless rf product device data figure 11. performance in broadband circuit (at small signal)  43/)9@ $! b" b 8" b" b 86"  <   0&    ""
8" 8 " 8" 3a) /1a31/3)a< 5?157 mrf6522?70 mrf6522?70r3 motorola wireless rf product device data figure 12. series equivalent input and output impedance f mhz z in ? z ol * ? 925 940 960 2.65 + j2.53 2.85 + j1.87 2.67 + j2.14 1.62 ? j0.2 1.56 ? j0.34 1.55 ? j0.2   9  3
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0=%  02 ,  # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9002r2 5?158 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies to 1.0 ghz. the high gain and broadband performance of this device make it ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical performance at 960 mhz, 26 volts output power ? 2 watts per transistor power gain ? 18 db efficiency ? 50% ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 960 mhz, 2 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r2 suffix = 1,500 units per 16 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total dissipation per transistor @ t c = 25 c p d 4 watts storage temperature range t stg ?65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case, single transistor r jc 12 c/w moisture sensitivity level test methodology rating per jesd 22?a113 3 note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1.0 ghz, 2 w, 26 v lateral n?channel broadband rf power mosfet case 978?03 plastic pfp?16 pin connections    5   "   5   6 7 1 # *+ 8 )9  1 )9  1 )9  15 )9 3 ) b 3 ) b 3 ) b 3 ) b )9 3 ) 5b 3 ) 5b )9 )9 note: exposed backside flag is source terminal for transistors. rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?159 mrf9002r2 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 vdc, i d = 20 adc) v gs(th) 2.4 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 25 madc) v gs(q) 3 ? 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 0.1 adc) v ds(on) ? 0.3 ? vdc functional tests (per transistor in motorola test fixture, 50 ohm system) common?source amplifier power gain @ p1db (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) g ps 15 18 ? db drain efficiency @ p1db (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) 35 50 ? % input return loss @ p1db (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) irl ? ?15 ?9 db power output, 1 db compression point (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) p 1db 34 37 ? dbm output mismatch stress (v dd = 26 vdc, p out = 2 w cw, i dq = 25 ma, f = 960.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9002r2 5?160 motorola wireless rf product device data figure 1. mrf9002r2 broadband test circuit schematic 34 /1 /1    < 95 9 /1  < 5 3   97 9 9 9   9 96 9 9 34 ) /1 34 /1 /1 345 /1 /1 34 ) /1 345 ) /1  <  <  <5  <5   5  3 35  6 7 8 " 9" 98 97 95   5   9 9 96 9 ; ; ; ; ; ; table 1. mrf9002r2 broadband test circuit component designations and values designators description c1?c6 33 pf chip capacitors (0805) c7?c12 1.0 f, 35 v tantalum capacitors, b case, kemet c13 8.2 pf chip capacitor (0805) c14, c15 10 pf chip capacitors (0805) c16, c17 2.7 pf chip capacitors (0805) c18 3.3 pf chip capacitor (0805) l1?l6 12 nh chip inductors (0805) r1?r3 0  chip resistors (0805) z1, z11 1.16 x 28.5 mm microstrip z2, z7, z12 0.65 x 5.6 mm microstrip z3, z8, z13 0.65 x 2.6 mm microstrip z4, z14 1.16 x 19.5 mm microstrip z5, z15 1.16 x 17.5 mm microstrip z6 1.16 x 12.9 mm microstrip z9 1.16 x 27.2 mm microstrip z10 1.16 x 4.3 mm microstrip pcb etched circuit board raw pcb material rogers ro4350, 0.020 , 2.5 , x 2.5 ,  r = 3.5 bedstead copper heatsink f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?161 mrf9002r2 motorola wireless rf product device data figure 2. mrf9002r2 broadband test circuit component layout pin 1 $348"" 8"a$! 34 ) /1 3*.a: 34 /1 /1 34 ) /1 34 /1 /1  <  <  <  < 9 9 97 9 96 98  9"  9   95 3 3 95 35 9 97 5 9  9 96 9 9 9 345 ) /1 345 /1 /1  <5  <5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9002r2 5?162 motorola wireless rf product device data typical characteristics   5 " 6  #2   <   0&    
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5?163 mrf9002r2 motorola wireless rf product device data 9 ,22 9 22 5"     <  3 ) </39 mrf9002r2 5?164 motorola wireless rf product device data figure 10. series equivalent input and output impedance f mhz z in ? z ol * ? 925 960 985 4.5 ? j13.3 4.1 ? j15.8 4.3 ? j15.3 23.4 ? j9.2 23.2 ? j10.4 23.0 ? j11.1 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.         
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0=%  02 ,  87 $! # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f mhz z in ? z ol * ? 925 960 985 6.0 ? j12.3 5.8 ? j16.5 5.9 ? j14.3 19.7 ? j27.8 22.0 ? j23.9 22.5 ? j25.4         
      f mhz z in ? z ol * ? 925 960 985 4.3 ? j12.2 3.9 ? j15.9 4.3 ? j14.0 23.1 ? j6.5 22.8 ? j8.4 22.6 ? j9.3         
             8 $!   " ?   8 $! 87 $! 87 $!        8 $! 87 $!   1  1  1    8 $! 87 $!    1  1 5 1 5 13 )<<13<  %0  13 )<<13 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?165 mrf9030r1 mrf9030lsr1 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed f or broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical two?tone performance at 945 mhz, 26 volts output power ? 30 watts pep power gain ? 19 db efficiency ? 41.5% imd ? ?32.5 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 30 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 68 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c mrf9030r1 derate above 25 c mrf9030lsr1 p d 92 0.53 117 0.67 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case mrf9030r1 mrf9030lsr1 r jc 1.9 1.5 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 945 mhz, 30 w, 26 v lateral n?channel broadband rf power mosfets case 360b?05, style 1 ni?360 mrf9030r1 case 360c?05, style 1 ni?360s mrf9030lsr1 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030r1 mrf9030lsr1 5?166 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) ? 3.8 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 0.7 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 49.5 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 26.5 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1 ? pf (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?167 mrf9030r1 mrf9030lsr1 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 18 19 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 41.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?32.5 ?28 dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?15.5 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 19 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 41.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?33 ? dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ?14 ? db power output, 1 db compression point (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f1 = 945.0 mhz) p 1db ? 30 ? w common?source amplifier power gain (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f1 = 945.0 mhz) g ps ? 19 ? db drain efficiency (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f1 = 945.0 mhz) ? 60 ? % output mismatch stress (v dd = 26 vdc, p out = 30 w cw, i dq = 250 ma, f = 945.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030r1 mrf9030lsr1 5?168 motorola wireless rf product device data  96 figure 1. 945 mhz broadband test circuit schematic 34 ) /1 34 /1 /1     9    b1 short ferrite bead b2 long ferrite bead c1, c8, c13, c14 47 pf chip capacitors, b case c2, c4 0.8 pf to 8.0 pf trim capacitors c3 3.9 pf chip capacitor, b case c5, c6 7.5 pf chip capacitors, b case c7, c15, c16 10 f, 35 v tantalum capacitors c9, c10 10 pf chip capacitors, b case c11 9.1 pf chip capacitor, b case c12 0.6 pf to 4.5 pf trim capacitor c17 220 f, 50 v electrolytic capacitor l1, l2 12.5 nh surface mount inductors z1 0.260 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.215 x 0.270 microstrip z5 0.315 x 0.270 microstrip z6 0.160 x 0.270 x 0.520 , taper z7 0.285 x 0.520 microstrip z8 0.140 x 0.270 microstrip z9 0.450 x 0.270 microstrip z10 0.250 x 0.060 microstrip z11 0.720 x 0.060 microstrip z12 0.490 x 0.060 microstrip z13 0.290 x 0.060 microstrip pcb taconic rf?35?0300, 30 mil, r = 3.55 5 7 8 6    :  " 9 figure 2. 945 mhz broadband test circuit component layout : 9 9 95 9 96 97 98 9" 9 9 9 95 9 9 9 96   3*.b" 900 mhz mrf9030 96 9 9 9 98  5 9 95 cut out area ; ;;; /1 97 9 95 9 9 9" 9 9     34 ) /1 34 /1 /1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?169 mrf9030r1 mrf9030lsr1 motorola wireless rf product device data typical characteristics 8"  " 85" b57 " 3  #2 $     0&   5"         "
1+ b1 * "" -! 1 * <#%&(  43/)9@ $! figure 3. class ab broadband circuit performance  #2 aa 3a )a0: )13$/ 1)a<131)a0:& $ a3 )a449)9@ah 8  7 " 6 5  b5"  b5  b5 5 b5 8 8 " 8 8" 85 b7 b" b b b ) /1a31/3)a< 5""
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  8 $!   /1 /1 3  11<  figure 7. power gain and efficiency versus output power  #2 aa 3a )a0: a3 )a449)9@ah " " 7 "  5"  "  " "  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030r1 mrf9030lsr1 5?170 motorola wireless rf product device data "" 7 "  b" "  #2 $   /1 /1 3  11<  figure 8. power gain, efficiency and imd versus output power  #2 aa 3a )a0: a3 )a449)9@ah 7 "  "  "  b" " b" " )13$/ 1)a<131)a0:& $     0&     "
  8 $!   8  $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?171 mrf9030r1 mrf9030lsr1 motorola wireless rf product device data f mhz z source ? z load ? 930 945 960 1.34 ? j0.1 1.4 ? j0.14 1.36 ? j0.2 3.175 + j0.09 3.1 + j0.08 3.0 + j0.05          "
   5"   figure 9. series equivalent input and output impedance   8" $!   ?   85" $!   85" $!   8" $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030mr1 mrf9030mbr1 5?172 motorola wireless rf product device data the rf sub?micron mosfet line   
   n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical performance at 945 mhz, 26 volts output power ? 30 watts pep power gain ? 20 db efficiency ? 41% (two tones) imd ? ?31 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 30 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? moisture sensitivity level 3 ? dual?lead boltdown plastic package can also be used as surface mount. ? to?272 available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. ? to?270 available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 139 0.93 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model mrf9030mr1 mrf9030mbr1 c7 (minimum) c6 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r  jc 1.08 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed.  semiconductor technical data %"" %""& 945 mhz, 30 w, 26 v lateral n?channel broadband rf power mosfets case 1337?0 2 , style 1 (to?272 dual lead) plastic (mrf9030mbr1) case 1265?07, style 1 (to?270) plastic (mrf9030mr1) rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?173 mrf9030mr1 mrf9030mbr1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) 3 3.8 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 0.7 adc) v ds(on) ? 0.23 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 2.7 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 49 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 27 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.2 ? pf functional tests (in motorola test fixture) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 18 20 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 41 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?13 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 20 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 40.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ?12 ? db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030mr1 mrf9030mbr1 5?174 motorola wireless rf product device data figure 1. 930?960 mhz broadband test circuit schematic z1 0.260 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.200 x 0.270 microstrip z5 0.330 x 0.270 microstrip z6 0.140 x 0.270 x 0.520 , taper z7 0.040 x 0.520 microstrip z8 0.090 x 0.520 microstrip z9 0.370 x 0.520 microstrip (mrf9030mr1) 0.290 x 0.520 microstrip (mrf9030mbr1) z10 0.130 x 0.520 microstrip (mrf9030mr1) 0.210 x 0.520 microstrip (mrf9030mbr1) z11 0.360 x 0.270 microstrip z12 0.050 x 0.270 microstrip z13 0.110 x 0.060 microstrip z14 0.220 x 0.060 microstrip z15 0.100 x 0.060 microstrip z16 0.870 x 0.060 microstrip z17 0.240 x 0.060 microstrip z18 0.340 x 0.060 microstrip board taconic rf?35?0300, r = 3.5  97 34 ) /1 34 /1 /1     9    5 "  8  :  5 9 : 97 9 9 96 98  7 9 ; ;;; /1 96 9 95 9 9 9" 9 9  6 7 95   6  table 1. 930 ? 960 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead, surface mount 95f786 newark b2 long ferrite bead, surface mount 95f787 newark c1, c7, c14, c15 47 pf chip capacitors, b case 100b470jp 500x atc c2 0.6?4.5 variable capacitor, gigatrim 44f3360 newark c3, c11 3.9 pf chip capacitors, b case 100b3r6bp 500x atc c4, c12 0.8?8.0 variable capacitors, gigatrim 44f3360 newark c5, c6 6.8 pf chip capacitors, b case 100b7r5jp 500x atc c8, c16, c17 10 f, 35 v tantulum chip capacitors 93f2975 newark c9, c10 10 pf chip capacitors, b case 100b100jp 500x atc c13 1.8 pf chip capacitor, b case (mrf9030mr1) 0.6?4.5 variable capacitor, gigatrim (mrf9030mbr1) 100b1r8bp 44f3360 atc newark c18 220 f electrolytic chip capacitor 14f185 newark l1, l2 12.5 nh coilcraft inductors a04t?5 coilcraft wb1, wb2 20 mil brass shim (0.250 x 0.250) rf?design lab rf?design lab pcb etched circuit board 900 mhz 250/viper rev 02 dselectronics f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?175 mrf9030mr1 mrf9030mbr1 motorola wireless rf product device data figure 2. 930?960 mhz broadband test circuit component layout (mrf9030mr1) 9 9 95 9 96 97 9" 98 9 9 9 9 9 9 96 97   mrf9030m 9 cut out area : : 95 : :     figure 3. 930?960 mhz broadband test circuit component layout (mrf9030mbr1) 900 mhz cut out area rev 02     : : 9 9 95 9 9 9 96 97 98 9" 9 9 95 9 9 9 96 97 : :   f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030mr1 mrf9030mbr1 5?176 motorola wireless rf product device data typical characteristics  #2 8"   85" b57 " 3 $     0&   5"         "
1+ b1 * "" -! 1 * <#%&(  43/)9@ $! figure 4. class ab broadband circuit performance  #2 aa 3a )a0: b" b7 b a3 )  449)9@ah $a)13$/ 1) <131)a0:& 3a) /1a31/3) < 5""
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  8 $!   /1 /1 3  11<  figure 8. power gain and efficiency versus output power  #2 aa 3a )a0: a3 )a449)9@ah " " 7 "  5"  "  " "  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?177 mrf9030mr1 mrf9030mbr1 motorola wireless rf product device data "" "  " b" "  #2 $   /1 /1 3  11<  figure 9. power gain, efficiency and imd versus output power  #2 aa 3a )a0: )13$/ 1)a<131)a0:& $ a3 )a449)9@ah     0&     "
  8 $!   8  $! " " 7 "  "  b"  b" "  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9030mr1 mrf9030mbr1 5?178 motorola wireless rf product device data f mhz z in ? z ol * ? 930 945 960 1.07 ? j0.160 1.17 ? j0.170 1.14 ? j0.385 3.53 + j0.20 3.41 + j0.24 3.60 + j0.17 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.          "
   5" %2    ) *>    +%2 &' 2* i%2*0  ,%0* 2 i*+** (% # # +*, 0,% *&*&g %0 *,
0=%  02 ,  figure 10. series equivalent input and output impedance (mrf9030mr1) # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-        85" $!   85" $!   8" $!   ?   8" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?179 mrf9030mr1 mrf9030mbr1 motorola wireless rf product device data f mhz z in ? z ol * ? 930 945 960 1.0 + j0.18 1.0 + j0.03 1.0 + j0.10 3.05 + j0.09 3.00 + j0.07 2.95 + j0.03 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.          "
   5" %2    ) *>    +%2 &' 2* i%2*0  ,%0* 2 i*+** (% # # +*, 0,% *&*&g %0 *,
0=%  02 ,  figure 11. series equivalent input and output impedance (mrf9030mbr1) # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-      85" $!   ?   8" $!   85" $!     8" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9045r1 mrf9045lsr1 5?180 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 28 volt base station equipment. ? typical two?tone performance at 945 mhz, 28 volts output power ? 45 watts pep power gain ? 18.8 db efficiency ? 42% imd ? ?32 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 945 mhz, 45 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c mrf9045r1 derate above 25 c mrf9045lsr1 p d 125 0.71 175 1 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case mrf9045r1 mrf9045lsr1 r jc 1.4 1.0 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 945 mhz, 45 w, 28 v lateral n?channel broadband rf power mosfets case 360b?05, style 1 ni?360 mrf9045r1 case 360c?05, style 1 ni?360s mrf9045lsr1 rev 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?181 mrf9045r1 mrf9045lsr1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 350 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 4 ? s dynamic characteristics input capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 69 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 37 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9045r1 mrf9045lsr1 5?182 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18.8 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 38 42 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?32 ?28 dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?14 ?9 db two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 18.5 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 41 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?33 ? dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? 13 ? db power output, 1 db compression point (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) p 1db ? 55 ? w common?source amplifier power gain (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) g ps ? 18 ? db drain efficiency (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) ? 60 ? % output mismatch stress (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f = 945.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?183 mrf9045r1 mrf9045lsr1 motorola wireless rf product device data figure 1. 930 ? 960 mhz broadband test circuit schematic z4 0.360 x 0.320 microstrip z5 0.240 x 0.320 x 0.620 , taper z6 0.140 x 0.620 microstrip z7 0.510 x 0.620 microstrip z8 0.330 x 0.320 microstrip z9 0.140 x 0.320 microstrip z10 0.070 x 0.080 microstrip z11 0.240 x 0.080 microstrip z12 0.140 x 0.080 microstrip z13 0.930 x 0.080 microstrip z14 0.180 x 0.080 microstrip z15 0.350 x 0.080 microstrip pcb arlon gx?0300?55?22, 0.03 , r = 2.55 b1 short ferrite bead surface mount b2 long ferrite bead surface mount c1, c7, c13, c14 47 pf chip capacitors, b case c2, c3, c11 0.8?8.0 pf gigatrim variable trim capacitors c4, c5, c8, c9 10 pf chip capacitors, b case c6, c15, c16 10 f, 35 v tantalum surface mount chip capacitors c10 2.2 pf chip capacitor, b case c12 0.7 pf chip capacitor, b case ? mrf9045ls 1.3 pf chip capacitor, b case ? mrf9045 c17 220 f, 50 v electrolytic capacitor l1, l2 12.5 nh surface mount inductors, coilcraft z1 0.260 x 0.080 microstrip z2 0.610 x 0.120 microstrip z3 0.260 x 0.320 microstrip : 9 34 ) /1 34 /1 /1     9    5 9   6 97 98 7 8 " 95   9 : 9 9 96 9 9  ; ; 96 ; ;  9 9" 95 9   5 figure 2. 930 ? 960 mhz broadband test circuit component layout cut out area : : 9 9 95 9 9 96 97 98 9" 9 9 9 95 9 9 9 96   : : 3*.b"a 900 mhz     mrf9045 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9045r1 mrf9045lsr1 5?184 motorola wireless rf product device data typical characteristics  " "" 5    6 7 8 " " " " " 5" " " " 6"   /1 /1 3  11<   43/)9@ $!  #2 a 3a )a0: 85" " figure 3. class ab broadband circuit performance  5    /1 /1 3  11<  figure 4. power gain versus output power figure 5. intermodulation distortion versus output power 6   8 7 85 8" 8 8 " 8 8"   /1 /1 3  11<    /1 /1 3  11<  figure 6. intermodulation distortion products versus output power figure 7. power gain, efficiency versus output power  #2 a 3a )a0: $a)13$/ 1)a<131)a0:& a3 )a449)9@ah  b57 b5 b5 b5 b5" "  " b b b a3 )  449)9@ah $a)13$/ 1) <131)a0:& 3a) /1a31/3) <   8 $!  #2 a 3a )a0:    7 0&           5 "
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5?185 mrf9045r1 mrf9045lsr1 motorola wireless rf product device data figure 8. series equivalent input and output impedance f mhz z source ? z load ? 930 945 960 1.02 + j0.06 1.15 + j0.25 1.10 + j0.11 2.6 + j0.20 2.6 + j0.16 2.6 + j0.10    7     5 "
        85" $!   ?   8" $!   85" $!   8" $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9045mr1 mrf9045mbr1 5?186 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 28 volt base station equipment. ? typical performance at 945 mhz, 28 volts output power ? 45 watts pep power gain ? 19 db efficiency ? 41% (two tones) imd ? ?31 dbc ? integrated esd protection ? guaranteed ruggedness @ load vswr = 5:1, @ 28 vdc, 945 mhz, 45 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? moisture sensitivity level 3 ? dual?lead boltdown plastic package can also be used as surface mount. ? to?272 available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. ? to?270 available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 177 1.18 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.85 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 945 mhz, 45 w, 28 v lateral n?channel broadband rf power mosfets case 1265?07, style 1 to?270 plastic mrf9045mr1 case 1337?02, style 1 to?272 dual lead plastic mrf9045mbr1 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?187 mrf9045mr1 mrf9045mbr1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 adc) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 350 madc) v gs(q) 3 3.7 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.22 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 4 ? s dynamic characteristics input capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 70 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 38 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.7 ? pf functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 19 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 38 41 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?14 ?9 db two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 19 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 41 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ?13 ? db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9045mr1 mrf9045mbr1 5?188 motorola wireless rf product device data figure 1. mrf9045mr1 930?960 mhz broadband test circuit schematic z3 0.14 x 0.32 microstrip z4 0.47 x 0.32 microstrip z5 0.16 x 0.32 x 0.62 taper z6 0.18 x 0.62 microstrip z7 0.56 x 0.62 microstrip z8 0.33 x 0.32 microstrip z9 0.14 x 0.32 microstrip z10 0.36 x 0.08 microstrip z11 1.01 x 0.08 microstrip z12 0.15 x 0.08 microstrip z13 0.29 x 0.08 microstrip b1, b2 short ferrite beads, surface mount c1, c7, c13, c14 47 pf chip capacitors, b case c2, c8 2.7 pf chip capacitors, b case c3 3.9 pf chip capacitor, b case c4, c5, c8, c9 10 pf chip capacitors, b case c6, c15, c16 10 f, 35 v tantalum surface mount capacitors c10 2.2 pf chip capacitor, b case c11 4.7 pf chip capacitor, b case c12 1.2 pf chip capacitor, b case c17 220 f, 50 v electrolytic capacitor l1, l2 12.5 nh inductors z1 0.20 x 0.08 microstrip z2 0.57 x 0.12 microstrip : 9 34 ) /1 34 /1 /1     9    5 9   6 97 98 7 8 " 95 9 : 9 9 96 9 9  ; ; 96 ; ; 9 95   5  /1 9" 9 figure 2. mrf9045mr1 930?960 mhz broadband test circuit component layout cut out area mrf9045mr1 , 0 9 9 95 9 9 9 96 97 98 9" 9 9 95 9 9 9     : : : : , 0  i%2  2##=g 96 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?189 mrf9045mr1 mrf9045mbr1 motorola wireless rf product device data figure 3. mrf9045mbr1 930?960 mhz broadband test circuit schematic z1 0.260 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.215 x 0.270 microstrip z5 0.315 x 0.270 microstrip z6 0.160 x 0.270 x 0.520 taper z7 0.285 x 0.520 microstrip z8 0.140 x 0.270 microstrip z9 0.450 x 0.270 microstrip z10 0.250 x 0.060 microstrip z11 0.720 x 0.060 microstrip z12 0.490 x 0.060 microstrip z13 0.290 x 0.060 microstrip board taconic rf?35?0300, r = 3.5 b1 short ferrite bead b2 long ferrite bead c1, c8, c13, c14 47 pf chip capacitors, b case c2 0.4?2.5 pf variable capacitor, johanson gigatrim c3 3.6 pf chip capacitor, b case c4 0.8?8.0 pf variable capacitor, johanson gigatrim c5, c6, c9, c10 10 pf chip capacitors, b case c7, c15, c16 10 f, 35 v tantalum chip capacitors c11 7.5 pf chip capacitor, b case c12 0.6?4.5 pf variable capacitor, johanson gigatrim c17 220 f electrolytic chip capacitor l1, l2 12.5 nh surface mount inductors wb1, wb2 10 mil brass wear blocks : 9 34 ) /1 34 /1 /1     96    5 9   6 9" 98 7 8 " 95  9 : 9 9 96 9 9  ; ; 97 ; ; 9 9 9   5 95 figure 4. mrf9045mbr1 930?960 mhz broadband test circuit component layout cut out area : : 9 9 95 9 9 96 97 98 9" 9 9 9 95 9 9 9 96   3*.b" 900 mhz mrf9045mb /1 /1 ) /1     /1 : : f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9045mr1 mrf9045mbr1 5?190 motorola wireless rf product device data typical characteristics 8"  " b57 " 3 $  4,*f*&g $! figure 5. class ab broadband circuit performance  #2 aa 3a )a0: 7 " 6 5  b5" 8   b5  b5 5 b5 8 8 " 8 8" 85 85"    7 0&           5 "
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5?191 mrf9045mr1 mrf9045mbr1 motorola wireless rf product device data typical characteristics " "  "  5" 5 "  " "  6"    7 5" 5    3 ) 1  1< figure 10. output voltage versus supply voltage (mrf9045mr1)  a/1 /1a 3a 11<a    "5    "         5 "
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mrf9045mr1 mrf9045mbr1 5?192 motorola wireless rf product device data figure 12. series equivalent input and output impedance (mrf9045mr1) f mhz z source ? z load ? 930 945 0.81 ? j0.25 0.85 ? j0.05 2.03 + j0.09 2.03 + j0.28    7     5 "
          8 $!   ?   85" $!   8 $!   85" $!  = %0  2 ,&* z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?193 mrf9045mr1 mrf9045mbr1 motorola wireless rf product device data figure 13. series equivalent input and output impedance (mrf9045mbr1) f mhz z source ? z load ? 930 945 960 0.75 ? j0.6 0.70 ? j0.5 0.72 ? j0.6 2.65 ? j0.05 2.60 ? j0.05 2.55 ? j0.02    7     5 "
          ?   85" $!   8" $!   85" $!   8" $! z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  = %0  2 ,&* f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060r1 mrf9060lsr1 5?194 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical two?tone performance at 945 mhz, 26 volts output power ? 60 watts pep power gain ? 17 db efficiency ? 40% imd ? ?31 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c mrf9060r1 derate above 25 c mrf9060lsr1 p d 159 0.91 219 1.25 watts w/ c watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case mrf9060r1 mrf9060lsr1 r jc 1.1 0.8 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 945 mhz, 60 w, 26 v lateral n?channel broadband rf power mosfets case 360b?05, style 1 ni?360 mrf9060r1 case 360c?05, style 1 ni?360s mrf9060lsr1 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?195 mrf9060r1 mrf9060lsr1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.17 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 98 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 50 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2 ? pf (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060r1 mrf9060lsr1 5?196 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 16 17 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 36 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?16 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 17 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 39 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ?16 ? db power output, 1 db compression point (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f1 = 945.0 mhz) p 1db ? 70 ? w common?source amplifier power gain (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f1 = 945.0 mhz) g ps ? 17 ? db drain efficiency (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f1 = 945.0 mhz) ? 51 ? % output mismatch stress (v dd = 26 vdc, p out = 60 w cw, i dq = 450 ma, f = 945.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?197 mrf9060r1 mrf9060lsr1 motorola wireless rf product device data 34 ) /1 figure 1. 945 mhz broadband test circuit schematic 34 /1 /1 9 9    6 z10 0.360 x 0.270 microstrip z11 0.060 x 0.270 microstrip z12 0.110 x 0.060 microstrip z13 0.330 x 0.060 microstrip z14 0.230 x 0.060 microstrip z15 0.740 x 0.060 microstrip z16 0.130 x 0.060 microstrip z17 0.340 x 0.060 microstrip pcb taconic rf?35?0300, 30 mil, r = 3.55 z1 0.240 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.180 x 0.270 microstrip z5 0.350 x 0.270 microstrip z6 0.270 x 0.520 x 0.140 taper z7 0.170 x 0.520 microstrip z8 0.410 x 0.520 microstrip z9 0.060 x 0.520 microstrip ;    5    9 : : 96 ;   96 9  95 9 ; 9 ; 5  " 9" 9 9  95 98 9 9 97 6 7 /1  8  table 1. 945 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead 95f786 newark b2 long ferrite bead 95f787 newark c1, c7, c13, c14 47 pf chip capacitors, b case 100b470jp 500x atc c2, c3, c11 0.8?8.0 gigatrim variable capacitors 44f3360 newark c4, c5, c8, c9 10 pf chip capacitors, b case 100b100jp 500x atc c6, c15, c16 10  f, 35 v tantalum chip capacitor 93f2975 newark c10 3.0 pf chip capacitor, b case 100b3r0jp 500x atc c12 0.5 pf chip capacitor, b case (mrf9060) 0.7 pf chip capacitor, b case (mrf9060s) 100b0r5bp 500x 100b0r7bp 500x atc atc c17 220  f electrolytic chip capacitor 14f185 newark l1, l2 12.5 nh inductors a04t?5 coilcraft n1, n2 n?type panel mount, stripline 3052?1648?10 avnet wb1, wb2 10 mil brass wear blocks f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060r1 mrf9060lsr1 5?198 motorola wireless rf product device data figure 2. 930 ? 960 mhz broadband test circuit component layout cut out area : 9 9 95 9 9 96 98 97 9" 9 9 9 9 95 9 9 96   : : 3*.b" 900 mhz     mrf9060 : ) /1 /1 /1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?199 mrf9060r1 mrf9060lsr1 motorola wireless rf product device data typical characteristics "" b6" " " )13$/ 1)a<131)a0:& $ "  b" b" b5" b" b " b" " "" 7 "    7 " " " " 5" " " "   /1 /1 3  11<   43/)9@ $!  #2 a 3a )a0: 85" 7 figure 3. class ab broadband circuit performance   "   /1 /1 3  11<  figure 4. power gain versus output power figure 5. intermodulation distortion versus output power  5  6  85 8" 8 8 " 8 8"   /1 /1 3  11<    /1 /1 3  11<  figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power  #2 a 3a )a0: $a)13$/ 1)a<131)a0:& a3 )a449)9@ah  b57 b5 b5 b5 b5" 5 "  " b" b7 b a3 )  449)9@ah $a)13$/ 1) <131)a0:& 3a) /1a31/3) <   8 $!  #2 a 3a )a0:     0&   "         "
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  8 $!   8  $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060r1 mrf9060lsr1 5?200 motorola wireless rf product device data typical characteristics " ""  7 "    7 b" b" b" " " " "   /1 /1 3  11<  figure 8. power gain, efficiency, and imd versus output power a3 )a449)9@ah   #2      0&     "
  8 $!   8  $!  #2 a 3a )a0: $  $a)13$/ 1)a<131)a0:& f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?201 mrf9060r1 mrf9060lsr1 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z source ? z load ? 930 945 960 0.80 ? j0.10 0.81 ? j0.10 0.80 ? j0.05 2.08 ? j0.65 2.07 ? j0.38 2.04 ? j0.37          "
   "     8" $!   ?   85" $!   85" $!   8" $!  = %0  2 ,&* z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060mr1 mrf9060mbr1 5?202 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical performance at 945 mhz, 26 volts output power ? 60 watts pep power gain ? 18.0 db efficiency ? 40% (two tones) imd ? ?31.5 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? to?270 dual lead available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. ? to?272 dual lead available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 223 1.79 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.56 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 945 mhz, 60 w, 26 v lateral n?channel broadband rf power mosfets case 1337?02, style 1 to?272 dual lead plastic mrf9060mbr1 case 1265?08, style 1 to?270 dual lead plastic mrf9060mr1 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?203 mrf9060mr1 mrf9060mbr1 motorola wireless rf product device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model mrf9060mr1 mrf9060mbr1 c6 (minimum) c5 (minimum) moisture sensitivity level test methodology rating per jesd 22?a113 mrf9060mr1 mrf9060mbr1 1 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) 3 3.7 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.21 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 101 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 53 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.5 ? pf (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060mr1 mrf9060mbr1 5?204 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ?31.5 ?28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ?14.5 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 18 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ?12.5 ? db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?205 mrf9060mr1 mrf9060mbr1 motorola wireless rf product device data figure 1. 930?960 mhz broadband test circuit schematic z10 0.060 x 0.520 microstrip z11 0.360 x 0.270 microstrip z12 0.060 x 0.270 microstrip z13 0.130 x 0.060 microstrip z14 0.300 x 0.060 microstrip z15 0.210 x 0.060 microstrip z16 0.600 x 0.060 microstrip z17 0.290 x 0.060 microstrip z18 0.340 x 0.060 microstrip z1 0.240 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.100 x 0.270 x 0.080 , taper z5 0.330 x 0.270 microstrip z6 0.120 x 0.270 microstrip z7 0.270 x 0.520 x 0.140 , taper z8 0.240 x 0.520 microstrip z9 0.340 x 0.520 microstrip 34 ) /1 34 /1 /1 9 9    7 ;    5 6  6 95 : : 96 ;   96 9  9 9 ; 9 ;  5  9" 9 9  95 98 9 9 97 7 8 /1 "    table 1. 930?960 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead 95f786 newark b2 long ferrite bead 95f787 newark c1, c7, c13, c14 47 pf chip capacitors, b case 100b470jp 500x atc c2, c3, c11 0.8?8.0 gigatrim variable capacitors 44f3360 newark c4, c5 11 pf chip capacitors, b case (mrf9060mr1) 10 pf chip capacitors, b case (mrf9060mbr1) 100b110jp 500x 100b100jp 500x atc c6, c15, c16 10  f, 35 v tantalum chip capacitors 93f2975 newark c8, c9 10 pf chip capacitors, b case 100b100jp 500x newark c10 3.9 pf chip capacitor, b case 100b3r9cp 500x atc c12 1.7 pf chip capacitor, b case 100b1r7bp 500x atc c17 220  f electrolytic chip capacitor 14f185 newark l1, l2 12.5 nh inductors a04t?5 coilcraft n1, n2 n?type panel mount, stripline 3052?1648?10 avnet wb1, wb2 15 mil brass wear blocks board material 30 mil glass teflon ? , r = 2.55 copper clad, 2 oz cu rf?35?0300 taconic pcb etched circuit board to?270/to?272 surface/bolt dselectronics f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060mr1 mrf9060mbr1 5?206 motorola wireless rf product device data cut out area : 9 9 95 9 9 96 98 97 9" 9 9 9 95 9 9 9 96   : :     mrf9060mb : ) /1 /1 /1 figure 2. 930?960 mhz broadband test circuit component layout mrf9060m f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?207 mrf9060mr1 mrf9060mbr1 motorola wireless rf product device data typical characteristics  #2 8"  8 b5 " 3     0&   "         "
1+ b1 * "" -! 1 * <#%&(  4,*f*&g $! figure 3. class ab broadband circuit performance  #2 aa 3a )a0: b" b7 b $a)13$/ 1) <131)a0:& 3a) /1a31/3) <   8 $!   /1 /1 3  11<  figure 7. power gain and efficiency versus output power  #2 aa 3a )a0: a3 )a449)9@ah 7 "  "  5"  " " " "  #2 "" 8    
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  8 $!   8  $!   /1 /1 3  11<  )13$/ 1)a<131)a0:& $ ' ,0*, 5,0 ,0*, b" b5" b" b " b" b6" " $ f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9060mr1 mrf9060mbr1 5?208 motorola wireless rf product device data typical characteristics figure 8. power gain, efficiency, and imd versus output power )13$/ 1)a<131)a0:& $ "" 7 " b" "   /1 /1 3  11<   #2 aa 3a )a0: a3 )a449)9@ah 7 "  "  "  b" " b" " $     0&     "
  8 $!   8  $!  #2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?209 mrf9060mr1 mrf9060mbr1 motorola wireless rf product device data f mhz z source ? z load ? 930 945 960 0.63 + j0.57 0.57 + j0.45 0.60 + j0.41 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36          "
   "   figure 9. series equivalent input and output impedance   8" $!    ?   85" $!   85" $!   8" $!  = %0  z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  2 ,&* f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 5?210 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for gsm 900 mhz frequency band, the high gain and broadband performance of these devices make them ideal for large?signal, common? source amplifier applications in 26 volt base station equipment. ? typical performance for gsm frequencies, 921 to 960 mhz, 26 volts output power @ p1db: 75 watts power gain @ p1db: 18.5 db efficiency @ p1db: 55% ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 921 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.7 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm 900 mhz frequency band, 75 w, 26 v lateral n?channel broadband rf power mosfets case 465?06, style 1 ni?780 mrf9080 case 465a?06, style 1 ni?780s mrf9080sr3, mrf9080lsr3 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?211 mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vds, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 ) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2.0 ? 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 700 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 6 adc) g fs ? 8.0 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c oss ? 73 ? pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 2.9 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) power output, 1 db compression point (v dd = 26 vdc, i dq = 600 ma, f = 921 and 960 mhz) p 1db 68 75 ? w common?source amplifier power gain @ 70 w (min) (v dd = 26 vdc, i dq = 600 ma, f = 921 and 960 mhz) g ps 17 18.5 20 db drain efficiency @ p out = 70 w (v dd = 26 vdc, i dq = 600 ma, f = 921 and 960 mhz) 1 47 52 ? % drain efficiency @ p1db (v dd = 26 vdc, i dq = 600 ma, f = 921 and 960 mhz) 2 ? 55 ? % input return loss (v dd = 26 vdc, p out = 70 w, i dq = 600 ma, f = 921 and 960 mhz) irl 9.5 12.5 ? db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 600 ma, f = 921 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally input matched. (2) to meet application requirements, motorola test fixtures are designed to cover full gsm 900 band ensuring batch to batch co nsistency f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 5?212 motorola wireless rf product device data figure 1. broadband gsm 900 test circuit schematic     9 ; 34 ) /1 3 9 3 35 9 ; 95 98 9 9 97 96 /1 9 9 34 /1 /1 9 9" 95 9 9 96 97 table 1. broadband gsm 900 test circuit component designations and values part description value, p/n or dwg manufacturer c1 4.7 pf chip capacitor, b case 100b4r7bw atc c2 2.7 pf chip capacitor, b case 100b2r7bw atc c3 1.5 pf chip capacitor, b case 100b1r5bw atc c4, c5, c9, c10, c12, c13 5.6 pf chip capacitors, b case 100b5r6cw atc c6, c16, c17 22 pf chip capacitors, b case 100b220gw atc c7, c18 10 f, 35 v tantalum chip capacitors 293d106x9035d2t sprague?vishay c8, c11 10 pf chip capacitors, b case 100b100jw atc c14 0.8 pf chip capacitor, b case 100b0r8bw atc c15 8.2 pf chip capacitor, b case 100b8r2gw atc r1, r2, r3 1.0 k ? , ??? w chip resistors (0805) wb1, wb2 beryllium copper wear blocks 0.004 x 0.210 x 0.520 raw pcb material 30 mil glass teflon ? , r = 2.55 tlx8?0300 taconic pcb etched circuit board c?gy?00?001?02 cibel f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?213 mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 motorola wireless rf product device data figure 2. broadband gsm 900 test circuit component layout mrf9080 95   34 /1 /1 34 ) /1   9 9 9 9 9 96 97 98 9" 9 9 95 9 9 9 96 97 3 3 35 : : cut out area f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 5?214 motorola wireless rf product device data figure 3. broadband gsm 900 optimized demo board schematic     9 ; 34 ) /1 / 3 9 3  35 3 1 9 ; 95 98 ; 9 9 97 96 /1 3 3 9 9 34 /1 /1 9 9" 95 9 table 2. broadband gsm 900 optimized demo board component designations and values part description value, p/n or dwg manufacturer c1 4.7 pf chip capacitor, accu?p (0805) #08051j3r9cbt avx c2 3.9 pf chip capacitor, accu?p (0805) #08051j3r9cbt avx c3, c15 22 pf chip capacitors, accu?p (0805) #08051j221 avx c4, c6 22  f, 35 v tantalum chip capacitors #t491x226k035as4394 kemet c5 1.0  f chip capacitor, accu?p (0805) #08053g105zatea avx c7, c8 5.6 pf chip capacitors, accu?p (0805) #08051j5r18cbt avx c9 220  f, 63 v electrolytic capacitor c10, c11 3.3 pf chip capacitors, accu?p (0805) #08051j8r2cbt avx c12, c13 2.2 pf chip capacitors, accu?p (0805) #08051j2r2cbt avx c14 4.7 pf chip capacitor #100b atc p1 5.0 k ? potentiometer cms cermet multi?turn #3224w bourns r1 10 ? , 1/8 w chip resistor (0805) r2 1.0 k ? , 1/8 w chip resistor (0805) r3 1.2 k ? , 1/8 w chip resistor (0805) r4 2.2 k ? , 1/8 w chip resistor (0805) r5, r6 1.0 k ? , 1/8 w chip resistors (0805) t1 bipolar npn transistor, sot?23 #bc847alt1 on semiconductor u1 voltage regulator, micro?8 #lp2951acdm?5.0r2 on semiconductor rf connectors, type sma #r125510001 radial substrate = taconic rf35, thickness 0.5 mm f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?215 mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 motorola wireless rf product device data figure 4. broadband gsm 900 optimized demo board component layout mrf9080 9 3 /  35 1 3 3 9 95 9 9 3 3 96 9 98 97 9 9 9" 95 9 9  : < , 0  mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 5?216 motorola wireless rf product device data typical characteristics (in motorola broadband gsm 900 optimized demo board) " "  "  5" 5   ) /1 3  11< figure 5. power gain versus output power  43/)9@ $! figure 6. power gain versus output power figure 7. power gain and input return loss versus frequency   ) /1 3  11<   /1 /1 3  11< figure 8. output power and efficiency versus input power figure 9. power gain versus output power  #2 a 3a )a0: a3 )a449)9@ah        0&    ""
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5?217 mrf9080 mrf9080r3 mrf9080sr3 mrf9080lsr3 motorola wireless rf product device data figure 11. series equivalent input and output impedance f mhz z in ? z ol * ? 880 920 960 0.91 + j2.11 1.6 + j2.61 0.88 + j2.65 1.22 + j0.12 1.00 + j0.16 1.22 + j0.22 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, bias current and frequency.         ""
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mrf9085 mrf9085r3 mrf9085sr3 mrf9085lsr3 5?218 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal fo r large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 700 ma is?97 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 20 watts power gain ? 17.9 db efficiency ? 28% adjacent channel power ? 750 khz: ?45.0 dbc @ 30 khz bw 1.98 mhz: ?60.0 dbc @ 30 khz bw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model mrf9085 mrf9085sr3/mrf9085lsr3 m2 (minimum) m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.7 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 880 mhz, 90 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780) mrf9085 case 465a?06, style 1 ni?780s mrf9085sr3, mrf9085lsr3 rev 8 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?219 mrf9085 mrf9085r3 mrf9085sr3 mrf9085lsr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2.0 ? 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 700 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 6 adc) g fs ? 8.0 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 73 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.9 ? pf (1) part is internally input matched. (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9085 mrf9085r3 mrf9085sr3 mrf9085lsr3 5?220 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) g ps 17 17.9 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) 36 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) irl ? ?21 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) g ps ? 17.9 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) ? 40.0 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) irl ? ?16 ? db power output, 1 db compression point, cw (v dd = 26 vdc, i dq = 700 ma, f1 = 880.0 mhz) p 1db ? 105 ? w common?source amplifier power gain (v dd = 26 vdc, p out = 90 w cw, i dq = 700 ma, f1 = 880.0 mhz) g ps ? 17.5 ? db drain efficiency (v dd = 26 vdc, p out = 90 w cw, i dq = 700 ma, f1 = 880.0 mhz) ? 51 ? % output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 700 ma, f = 880.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power power output, 1 db compression point, cw (1) (v dd = 26 vdc, i dq = 700 ma, f1 = 960 mhz) p 1db ? 105 ? w (1) these values are derived from a 960 mhz optimized test fixture. values are not applicable to figures 1 and 2. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?221 mrf9085 mrf9085r3 mrf9085sr3 mrf9085lsr3 motorola wireless rf product device data figure 1. 865?895 mhz broadband test circuit schematic 34 ) /1 34 /1 / 1     9 9 : ; 5  /1   98 :5 9 ;     b1, b2, b3 short ferrite beads, surface mount c1, c9, c15, c16 47 pf chip capacitors, b case , atc c3 5.6 pf chip capacitor, b case, atc c4, c13 0.8 ? 8.0 v ariable capacitors, gigatrim c5, c6, c12 8.2 pf chip capacitors, b case, a t c c7, c17, c18, c19 10  f, 35 v tantalum surface mount capacitors, kemet c8 20 k pf chip capacito r , b case, a t c c10, c11 16 pf chip capacitors, b case, atc c14 0.6 ? 4.5 v ariable capacito r , gigatrim l1 7.15 nh inductor, coilcraft l2 1 7 .5 nh inducto r , coilcraft n1, n2 n?type panel mount, stripline, m/a?com wb1, wb2 5 mil becu shim (0.225 x 0.525) z1 0.219  x 0.080  microstrip z2 0.150  x 0.080  microstrip z3 0.851  x 0.080  microstrip z4 0.125  x 0.220  microstrip z5 0.123  x 0.220  microstrip z6 0.076  x 0.220  microstrip z7 0.261  x 0.220  microstrip z8 0.220  x 0.630  x 0.200  taper z9 0.240  x 0.630  microstrip z10 0.060  x 0.630  microstrip z11 0.067  x 0.630  microstrip z12 0.233  x 0.630  microstrip z13 0.630  x 0.220  x 0.200  taper z14 0.200  x 0.220  microstrip z15 0.055  x 0.220  microstrip z16 0.088  x 0.220  microstrip z17 0.226  x 0.220  microstrip z18 0.868  x 0.080  microstrip z19 0.129  x 0.080  microstrip z20 0.223  x 0.080  microstrip pcb arlon gx?0300?55?22, 30 mils  , = 2.55 9 6 " 6 97 98  9 9 9" 96 95 " 96 97 : 95 9   8 7 8 9 5 7  9  ; ;;; figure 2. 865?895 mhz broadband test circuit component layout 9 9 95 9 96 98  : 97 : 9 95 9 9" 9 9     :5 96 98 97 : 9  9 : 9/1/1 mrf9085 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9085 mrf9085r3 mrf9085sr3 mrf9085lsr3 5?222 motorola wireless rf product device data typical characteristics b7" b" b" b" " " " $   /1 /1 3  11<   43/)9@ $!  #2 a 3a )a0: 7" 7 figure 3. class ab broadband circuit performance     /1 /1 3  11<  8 6 figure 4. power gain, efficiency, imd versus output power  8  b6" figure 5. intermodulation distortion products versus output power "" " b" b5" b" b " b"  5  5      0&   8"        6""
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5?223 mrf9085 mrf9085r3 mrf9085sr3 mrf9085lsr3 motorola wireless rf product device data figure 8. series equivalent input and output impedance f mhz z source ? z load ? 865 880 895 1.35 ? j1.92 1.28 ? j1.30 1.33 ? j1.66 1.26 ? j0.15 1.26 ? j0.10 1.21 ? j0.20         6""
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0=%  02 ,   2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-   78 $!   78 $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9100 mrf9100r3 mrf9100sr3 5?224 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and edge base station applications with frequencies from 921 to 960 mhz, the high ga in and broadband performance of these devices make them ideal for large?signal, common source amplifier applica- tions in 26 volt base station equipment. ? on?die integrated input match ? typical performance @ full gsm band, 921 to 960 mhz, 26 volts output power, p1db ? 110 watts (typ) power gain @ p1db ? 16.5 db (typ) efficiency @ p1db ? 53% (typ) ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 921 mhz, 100 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 175 1.0 watts w/ c storage temperature range t stg ?65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c7 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.0 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm/edge 900 mhz, 110 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 (ni?780) (mrf9100) case 465a?06, style 1 (ni?780s) (mrf9100sr3) rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?225 mrf9100 mrf9100r3 mrf9100sr3 motorola wireless rf product device data electrical characteristics (t c = 25 c, 50 ohm system unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 500 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 800 madc) v gs(q) 3 ? 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.5 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 8 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.0 ? pf functional tests (in motorola test fixture) output power, 1 db compression point, cw (v dd = 26 vdc, i dq = 800 ma, f = 960 mhz) p 1db 100 110 ? w common?source amplifier power gain (v dd = 26 vdc, p out = 100 w cw, i dq = 800 ma, f = 960 mhz) g ps 16 17 ? db drain efficiency (v dd = 26 vdc, p out = 100 w cw, i dq = 800 ma, f = 960 mhz) 47 51 ? % input return loss (v dd = 26 vdc, p out = 100 w cw, i dq = 800 ma, f1 = 921 mhz and 960 mhz, f2 = 940 mhz) irl ? ? ? ?20 ?10 ? db third order intermodulation distortion (v dd = 26 vdc, p out = 100 w pep, i dq = 800 ma, f = full gsm band 921?960 mhz, tone spacing = 100 khz) imd ? ?30 ? dbc output mismatch stress (v dd = 26 vdc, i dq = 800 ma, p out = 100 w cw, f = 921 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9100 mrf9100r3 mrf9100sr3 5?226 motorola wireless rf product device data  3 9 35 34 ) /1 34 /1 /1     /1 3 9 95 9 9 9  5    6 7 8 "   5 95 9 9 9 9 96 9" 97 98 figure 1. mrf9100 test circuit schematic ; table 1. mrf9100 test circuit component designations and values designators description c1, c13 22 pf, 100b chip capacitors, atc #100b220gw c2, c12 2.2 pf, 100b chip capacitors, atc #100b2r2bw c3 6.8 pf, 100b chip capacitor, atc #100b6r8cw c4, c5 10 pf, 100b chip capacitors, atc #100b100gw c6, c14 33 pf, 100b chip capacitors, atc #100b330jw c7, c8, c9, c10 4.7 pf, 100b chip capacitors, atc #100b4r7bw c11 2.7 pf, 100b chip capacitor, atc #100b2r7bw c15 10 f, 35 v tantalum chip capacitor, vishay?sprague #293d106x9035d r1, r2 10 k  1/8 w chip resistors (0805) r3 1 k  1/8 w chip resistor (0805) z1 0.495 x 0.087 microstrip z2 0.657 x 0.087 microstrip z3 0.324 x 0.087 microstrip z4 0.429 x 0.087 microstrip z5 0.250 x 0.790 microstrip z6 0.535 x 0.790 microstrip z7 0.312 x 0.790 microstrip z8 0.409 x 0.790 microstrip z9 0.432 x 0.087 microstrip z10 0.220 x 0.087 microstrip z11 0.828 x 0.087 microstrip z12 0.485 x 0.087 microstrip z13 1.602 x 0.087 microstrip substrate taconic tlx8, thickness 0.8 mm f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?227 mrf9100 mrf9100r3 mrf9100sr3 motorola wireless rf product device data figure 2. mrf9100 test circuit component layout 9 95 9 9 9" 97 98 96 9   9 35 9 9 95 9 9 3 3 mrf9100 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9100 mrf9100r3 mrf9100sr3 5?228 motorola wireless rf product device data figure 3. mrf9100 demo board schematic 1 9 34 ) /1   5 97  96 9"  98  6 34 /1 /1 9 9 8 "  5  7 9 9   3 3 35 3 9 3 3  9 95 / 1 95   ; ; ; 9 ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?229 mrf9100 mrf9100r3 mrf9100sr3 motorola wireless rf product device data table 2. gsm 900 optimized demo board component designations and values designators description c1 1.0 f chip capacitor, avx #08053g105zatea (0805) c2, c5 33 pf chip capacitors, avx #08051j330gbt, accu?p (0805) c3, c13, c14 22 f, 35 v tantalum chip capacitors, kemet #t491x226k035as4394 c4 220 f, 63 v electrolytic capacitor radial, philips #13668221 c6 5.6 pf chip capacitor, avx #08051j5r6cbt, accu?p (0805) c7 4.7 pf chip capacitor, avx #08051j4r7cbt, accu?p (0805) c8 22 pf chip capacitor, avx #08051j220gbt, accu?p (0805) c9, c10 3.9 pf chip capacitors, avx #08051j3r9bbt, accu?p (0805) c11 2.2 pf chip capacitor, avx #08051j2r2bbt, accu?p (0805) c12 33 pf, 100b chip capacitor, atc #100b330jw p1 5.0 k  potentiometer cms cermet multi?turn, bourns #3224w r1 10  1/8 w chip resistor (0805) r2 1.0 k  1/8 w chip resistor (0805) r3 1.2 k  1/8 w chip resistor (0805) r4 2.2 k  1/8 w chip resistor (0805) r5 100  1/8 w chip resistor (0805) r6 1.0  1/8 w chip resistor (0805) t1 npn bipolar transistor, sot?23, motorola #bc847 u1 voltage regulator, micro?8, motorola #lp2951 z1 0.916 x 0.042 microstrip z2 0.169 x 0.042 microstrip z3 0.212 x 0.042 microstrip z4 0.090 x 0.465 microstrip z5 0.465 x 0.842 microstrip z6 1.776 x 0.059 microstrip z7 1.802 x 0.059 microstrip z8 1.094 x 0.592 microstrip z9 0.085 x 0.042 microstrip z10 0.198 x 0.042 microstrip z11 0.253 x 0.191 + 0.292 x 0.061 microstrip z12 0.181 x 0.042 microstrip z13 0.282 x 0.042 microstrip substrate taconic rf35, thickness 0.5 mm, r = 3.5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9100 mrf9100r3 mrf9100sr3 5?230 motorola wireless rf product device data figure 4. mrf9100 demo board component layout 3 /  3 3 1 9 3 3 35 95 9 95 9 98 96 9 97 9" 9 9 9 <,%# <,%# mrf9100  i%2  0,% , 0 9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?231 mrf9100 mrf9100r3 mrf9100sr3 motorola wireless rf product device data typical characteristics """ " " 7"" b " 3  #2   5"   43/)9@ $! figure 5. power gain versus output power  #2 aa 3a )a0: ) /1a31/3)a< 1 9    9   5"  ""  ""  7 b  b"  b  b" 86 8 " 8 8"" 76 7 " 7  " " " "    ) /1 3  11< figure 6. output power and efficiency versus input power a3 )a449)9@ah  a/1 /1a 3a 11< " 8 "  "" 5 7" 7 "  "  " 6  5        0&    7""
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mrf9100 mrf9100r3 mrf9100sr3 5?232 motorola wireless rf product device data figure 11. series equivalent input and output impedance f mhz z in ? z ol * ? 840 880 920 2.04 + j0.57 2.00 ? j0.44 2.20 + j0.16 1.62 ? j1.65 1.88 ? j2.45 1.79 ? j2.40 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.         7""
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0=%  02 ,  # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- 960 1000 2.62 ? j0.25 2.16 ? j0.25 1.47 ? j1.82 1.58 ? j1.52   ?        """ $!   7" $!   """ $!   7" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?233 mrf9120 mrf9120s motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed f or broadband commercial and industrial applications with frequen- cies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal for large?signal, common source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 2 x 500 ma is?97 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 26 watts power gain ? 16 db efficiency ? 26% adjacent channel power ? 750 khz: ?45 dbc @ 30 khz bw 1.98 mhz: ?60 dbc @ 30 khz bw ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 120 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ? 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.45 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data case 375b?04, style 1 ni?860 mrf9120 880 mhz, 120 w, 26 v lateral n?channel rf power mosfets case 375h?03, style 1 ni?860s mrf9120s rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9120 mrf9120s 5?234 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) ? 3.8 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.17 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 50 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2 ? pf (1) each side of device measured separately. (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?235 mrf9120 mrf9120s motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) g ps 15 16.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) 36 39 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) irl ? ?16 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) g ps ? 16.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) ? 40.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) imd ? ?30 ? dbc input return loss (v dd = 26 vdc, p out = 120 w pep, i dq = 2 x 500 ma, f1 = 895.0 mhz, f2 = 895.1 mhz) irl ? ?13 ? db power output, 1 db compression point (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f1 = 880.0 mhz) p 1db ? 120 ? w common?source amplifier power gain (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f1 = 880.0 mhz) g ps ? 16 ? db drain efficiency (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f1 = 880.0 mhz) ? 51 ? % output mismatch stress (v dd = 26 vdc, p out = 120 w cw, i dq = 2 x 500 ma, f = 880.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9120 mrf9120s 5?236 motorola wireless rf product device data  8  7 /1 ; ; 34 ) /1 34 /1 /1 98 :5  :%=     7  5  6 8 5 6 "    6 :   : : : : 95" 9" 98 96 9 9 9 9 9 9" 97  :%=  9 9 96  96 98 95 9 97 9 9 9 95 9 9 95 9 3 3 9         ; ; ; ; ; ; figure 1. 880 mhz broadband test circuit schematic 97 5  "  z14, z15 0.040 x 0.630 microstrip z16, z17 0.040 x 0.630 microstrip z18, z19 0.330 x 0.630 microstrip z20, z21 0.450 x 0.630 microstrip z22, z23 0.750 x 0.220 microstrip z24, z25 0.115 x 0.420 microstrip z26 0.130 x 0.080 microstrip z27 0.350 x 0.080 microstrip z1 0.420 x 0.080 microstrip z2, z3 0.090 x 0.420 microstrip z4, z5 0.125 x 0.220 microstrip z6, z7 0.095 x 0.220 microstrip z8, z9 0.600 x 0.220 microstrip z10, z11 0.200 x 0.630 microstrip z12, z13 0.500 x 0.630 microstrip f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?237 mrf9120 mrf9120s motorola wireless rf product device data table 1. 880 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1, b3, b5, b6 long ferrite beads, surface mount 95f787 newark b2, b4 short ferrite beads, surface mount 95f786 newark c1, c2 68 pf chip capacitors, b case 100b680jp500x atc c3, c6 0.8 ? 8.0 pf variable capacitors 44f3360 newark c4 7.5 pf chip capacitor, b case 100b7r5jp150x atc c5 3.3 pf chip capacitor, b case 100b3r3cp150x atc c7, c8 11 pf chip capacitors, b case 100b110bca500x atc c9, c10, c21, c22 51 pf chip capacitors, b case 100b510jp500x atc c11, c12 6.2 pf chip capacitors, b case 100b6r2bca150x atc c13 4.7 pf chip capacitor, b case 100b4r7bca150x atc c14 5.1 pf chip capacitor, b case 100b5r1bca150x atc c15 3.0 pf chip capacitor, b case 100b2r7bca150x atc c16 2.7 pf chip capacitor, b case 100b3r0bca150x atc c17 0.6 ? 4.5 pf variable capacitor 44f3358 newark c18, c19 47 pf chip capacitors, b case 100b470jp500x atc c20 0.4 ? 2.5 pf variable capacitor 44f3367 newark c29, c30 10 f, 35 v tantalum chip capacitors 93f2975 newark c23, c24, c25, c26 22 f, 35 v tantalum chip capacitors 92f1853 newark c27, c28 220 f, 50 v electrolytic capacitors 14f185 newark balun 1, balun 2 xinger surface mount balun transformers 3a412 anaren l1, l2 12.5 nh mini spring inductors a04t?5 coilcraft r1, r2 510 ? , 1/4 w chip resistors garret wb1, wb2, wb3, wb4 10 mil brass wear blocks board material 30 mil glass teflon ? , r = 2.55 copper clad, 2 oz cu 900 mhz push?pull rev 01b cmr pcb etched circuit board 900 mhz push?pull rev 01b cmr : : : :5 :%= :%= 9/1/1a 3 95" :5 3 $348" 8""a$! /<a / 3*.a": : 9" 97 9 9 9 9 3 96 98 : : 98 96 9 9 9 9 :  95b9  9 9 : 9 95 97 9" 9 96 98 95 9 97 figure 2. 865?895 mhz broadband test circuit component layout         ) /1 /1 /1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9120 mrf9120s 5?238 motorola wireless rf product device data typical characteristics 3a) /1a31/3)a< 1 * <#%&(  "" -! 6   "  5  b5" 5 b5  b5  b5 78 78" 77 77" 76 76" 7 ""  7  ""
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5?239 mrf9120 mrf9120s motorola wireless rf product device data typical characteristics   /1 /1 3  11<    /1 /1 3  11<  figure 8. power gain, efficiency and imd versus output power figure 9. power gain, efficiency and acpr versus output power  #2 a 3a )a0: $a)13$/ 1)a<131)a0:& a3 )a449)9@ah   #2 a 3a )a0: a3 )a449)9@ah  9 3a e 9)1a9 ))a 3a3 1a0: ""  7 " b7" "  #2 6 " -!     0&     ? ""
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mrf9120 mrf9120s 5?240 motorola wireless rf product device data figure 10. series equivalent input and output impedance f mhz z source ? z load ? 865 880 895 4.89 ? j0.2 3.29 ? j1.3 4.54 + j0.07 4.9 ? j0.5 4.6 ? j0.32 4.2 ? j0.04          ""
   "     ?  2 ,&*  = %0   78 $!   7 $! z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ;   7 $!   78 $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?241 mrf9130l mrf9130lr3 mrf9130lsr3 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and edge base station applications with frequencies from 921 to 960 mhz, the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applica- tions in 28 volt base station equipment. ? typical performance for gsm frequencies, 921 to 960 mhz, 28 volts output power @ p1db ? 135 watts power gain ? 16.5 db @ 130 watts output power efficiency ? 48% @ 130 watts output power ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, all frequency band, 130 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 298 1.7 watts w/ c storage temperature range t stg ?65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c7 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.6 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm/edge 921?960 mhz, 130 w, 28 v lateral n?channel rf power mosfets case 465?06, style 1 (ni?780) (mrf9130l) case 465a?06, style 1 (ni?780s) (mrf9130lsr3) rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9130l mrf9130lr3 mrf9130lsr3 5?242 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vds, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vds, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 450 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) ? 3.6 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.2 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 9 adc) g fs ? 12 ? s dynamic characteristics (1) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 110 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.4 ? pf functional tests (in motorola test fixture) power output, 1 db compression point (v dd = 28 vdc, i dq = 1000 ma, f = 921 and 960 mhz) p 1db 120 135 ? w common?source amplifier power gain (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) g ps 15.5 16.5 ? db drain efficiency (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) 43 48 ? % input return loss (v dd = 28 vdc, p out = 130 w, i dq = 1000 ma, f = 921 and 960 mhz) irl ? ?12 ?9 db output mismatch stress (v dd = 28 vdc, p out = 130 w cw, i dq = 1000 ma, f = 921 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally input matched. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?243 mrf9130l mrf9130lr3 mrf9130lsr3 motorola wireless rf product device data figure 1. 921?960 mhz test circuit schematic 9 ;  97 3 34 ) /1 34 /1 /1 /1   9 3 95 35   9 9 9 ; 96  98 5 9 9" 95 9  96 9 9 9 97 9" 98  9 9  table 1. 921?960 mhz test circuit component designations and values designators description c1, c4 10 f, 35 v tantalum capacitors, vishay?sprague #293d106x9035d c2, c5 100 nf chip capacitors (1206), avx #1206c104katda c3, c8, c21, c22 22 pf, 100b chip capacitors, atc #100b220c c6 33 pf, 100b chip capacitor, atc #100b330jw c7 1.0 pf, 100b chip capacitor, atc #100b1r0bw c9 4.7 pf, 100b chip capacitor, atc #100b4r7bw c10 8.2 pf, 100b chip capacitor, atc #100b8r2cw c11 10 pf, 100b chip capacitor, atc #100b100gw c12, c13 12 pf, 100b chip capacitors, atc #100b120gw c14, c15 2.7 pf, 100b chip capacitors, atc #100b2r7bw c16, c17, c18 3.9 pf, 100b chip capacitors, atc #100b3r9bw c19 3.3 pf, 100b chip capacitor, atc #100b3r3bw c20 1.8 pf, 100b chip capacitor, atc #100b1r8bw r1 18 k  , 1/8 w chip resistor (1206) r2 10 k  , 1/8 w chip resistor (1206) r3 1.0 k  , 1/8 w chip resistor (1206) z1 0.117 x 0.600 microstrip z2 0.117 x 1.851 microstrip z3 1.074 x 1.068 microstrip z4 1.074 x 0.980 microstrip z5 0.117 x 1.933 microstrip z6 0.117 x 0.605 microstrip substrate taconic tlx8, thickness 0.8 mm rf connectors, type n, macom #3052?1648?10 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9130l mrf9130lr3 mrf9130lsr3 5?244 motorola wireless rf product device data figure 2. 921?960 mhz test circuit component layout mrf9130l 9 3 9 3 95 96 97 98 35 9" 9 9 95 9 9 9 96 97 98 9" 9 9 9 9 9  : < , 0  5?245 mrf9130l mrf9130lr3 mrf9130lsr3 motorola wireless rf product device data typical characteristics figure 3. power gain and input return loss versus frequency figure 4. power gain and efficiency versus output power figure 5. power gain versus output power figure 6. power gain versus output power figure 7. power gain versus output power   /1 /1 3 0:
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mrf9130l mrf9130lr3 mrf9130lsr3 5?246 motorola wireless rf product device data figure 8. evm and efficiency versus output power figure 9. spectral regrowth versus output power   /1 /1 3  11<  < 913 a331a0:& "" b6 b"    7 0&    7""
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  8" $! 7  " "   $ " " " 5" " " a3 )a449)9@ah  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?247 mrf9130l mrf9130lr3 mrf9130lsr3 motorola wireless rf product device data figure 10. series equivalent input and output impedance f mhz z in ? z ol * ? 880 920 960 0.63 + j1.66 0.82 + j2.18 0.67 + j1.88 0.82 + j0.36 0.72 + j0.30 0.74 + j0.37 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.    7 0&    """
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0=%  02 ,  # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- 1000 0.86 + j2.56 0.69 + j0.79   ?        """ $!   77" $!   """ $!   77" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9135l mrf9135lr3 mrf9135lsr3 5?248 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal fo r large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical n?cdma performance @ 880 mhz, 26 volts, i dq = 1100 ma is?95 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 25 watts avg. power gain ? 17.8 db efficiency ? 25% adjacent channel power ? 750 khz: ?47 dbc @ 30 khz bw ? internally matched, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 135 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 298 1.7 watts w/ c storage temperature range t stg ?65 to +200 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.6 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model c7 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 880 mhz, 135 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf9135l case 465a?06, style 1 ni?780s mrf9135lsr3 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?249 mrf9135l mrf9135lr3 mrf9135lsr3 motorola wireless rf product device data electrical characteristics (t c = 25 c, 50 ohm system unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 450 a) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 1100 madc) v gs(q) 3 3.7 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 9 adc) g fs ? 12 ? s dynamic characteristics output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 109 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.4 ? pf functional tests (in motorola test fixture, 50 ohm system) single?carrier n?cdma, 1.2288 mhz channel bandwidth carrier, peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf common?source amplifier power gain (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz) g ps 16 17.8 ? db drain efficiency (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz) 22 25 ? % adjacent channel power ratio (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz; acpr @ 25 w, 1.23 mhz bandwidth, 750 khz channel spacing) acpr ? ?47 ?45 dbc input return loss (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 880.0 mhz) irl ? ?13.5 ?9 db common?source amplifier power gain (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz) g ps ? 17 ? db drain efficiency (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz) ? 24 ? % adjacent channel power ratio (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz; acpr @ 25 w, 1.23 mhz bandwidth, 750 khz channel spacing) acpr ? ?46 ? dbc input return loss (v dd = 26 vdc, p out = 25 w avg. n?cdma, i dq = 1100 ma, f = 865 mhz and 895 mhz) irl ? ?12.5 ? db output mismatch stress (v dd = 26 vdc, p out = 135 w cw, i dq = 1100 ma, f = 880.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9135l mrf9135lr3 mrf9135lsr3 5?250 motorola wireless rf product device data figure 1. 880 mhz test circuit schematic z1 0.430 x 0.080 microstrip z2 0.430 x 0.080 microstrip z3 0.800 x 0.080 microstrip z4 0.200 x 0.220 microstrip z5 0.110 x 0.220 microstrip z6 0.175 x 0.220 microstrip z7 0.200 x 0.220 x 0.630 taper z8 0.250 x 0.630 microstrip z9 0.050 x 0.630 microstrip z10 0.050 x 0.630 microstrip z11 0.105 x 0.630 microstrip z12 0.145 x 0.630 microstrip z13 0.200 x 0.630 x 0.220 taper z14 0.180 x 0.220 microstrip z15 0.110 x 0.220 microstrip z16 0.200 x 0.220 microstrip z17 0.900 x 0.080 microstrip z18 0.360 x 0.080 microstrip z19 0.410 x 0.080 microstrip pcb arlon gx?0300?55?22, 30 mil, r = 2.55 34 ) /1 34 /1 /1    9 96  /1   95   9 98 95 9 ;;; 97 9" 9 9  9 9  5  6 7 8  ; 98 97 96 ; : : 95 9 9 9" 9 9   6 9 5 7 8   " table 1. 880 mhz test circuit component designations and values part description value, p/n or dwg manufacturer b1, b2 short ferrite beads, surface mount 95f786 newark c1, c7, c17, c18 47 pf chip capacitors, b case 100b470jp 500x atc c2, c16 0.6?4.5 gigatrim variable capacitors 44f3360 newark c3 8.2 pf chip capacitor, b case 100b8r2bp 500x atc c4, c15 0.8?8.0 gigatrim variable capacitors 44f3360 newark c5, c6 12 pf chip capacitors, b case 100b120jp 500x atc c8 20k pf chip capacitor, b case 200b203mp50x atc c9, c20, c21, c22 10 f, 35 v tantulum capacitors 93f2975 newark c10, c11, c12, c13 7.5 pf chip capacitors, b case 100b7r5jp 500x atc c14 11 pf chip capacitor, b case 100b110jp 500x atc c19 0.56 f, 50 v chip capacitor c1825c564k5ra7800 kemet c23 470 f electrolytic capacitor 14f185 newark l1, l2 12.5 nh coilcraft inductors a04t?5 coilcraft wb1, wb2 10 mil brass shim (0.205 x 0.530) rf?design lab rf?design lab f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?251 mrf9135l mrf9135lr3 mrf9135lsr3 motorola wireless rf product device data 9" 9 9 9 figure 2. 880 mhz test circuit component layout cut out area 900 mhz mrf9135l 3*.b" : :   9" 98 : 9 95 9 9 9 95 9 9 96 9 97 : 97 9 9 96 98 95 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9135l mrf9135lr3 mrf9135lsr3 5?252 motorola wireless rf product device data typical characteristics "" "   " " 7 "  5"  "  " " " " 8"" 7 76" 76 77" 77 78" 78  8 7" b" 5 3  #2 9 3     0&      .(    ""
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  77" $! )b9$  mrf9135l mrf9135lr3 mrf9135lsr3 5?254 motorola wireless rf product device data f mhz z source ? z load ? 865 880 895 1.15 + j0.3 1.35 + j0.75 1.25 + j0.5 1.17 ? j0.24 1.22 ? j0.1 1.32 ? j0.07        ""
     .( figure 11. series equivalent input and output impedance    ?   78 $!   7 $!   78 $!   7 $!  = %0   2 ,&* z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?255 mrf9180 mrf9180s motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal fo r large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 2  700 ma is?97 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 40 watts power gain ? 17 db efficiency ? 26% adjacent channel power ? 750 khz: ?45.0 dbc @ 30 khz bw 1.98 mhz: ?60.0 dbc @ 30 khz bw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 170 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 388 2.22 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.45 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 880 mhz, 170 w, 26 v lateral n?channel rf power mosfets case 375d?04, style 1 ni?1230 mrf9180 case 375e?03, style 1 ni?1230s mrf9180s rev 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9180 mrf9180s 5?256 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 700 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.5 vdc forward transconductance (v ds = 10 vdc, i d = 6 adc) g fs ? 6 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 77 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 3.8 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) g ps 16 17.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) 35 39 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) irl ? ?15 ?9 db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) g ps ? 17.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) ? 38.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 170 w pep, i dq = 2  700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) irl ? ?13 ? db power output, 1 db compression point (v dd = 26 vdc, cw, i dq = 2  700 ma, f1 = 880.0 mhz) p 1db ? 170 ? w (1) each side of device measured separately. (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?257 mrf9180 mrf9180s motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) (continued) common?source amplifier power gain (v dd = 26 vdc, p out = 170 w cw, i dq = 2  700 ma, f1 = 880.0 mhz) g ps ? 16.5 ? db drain efficiency (v dd = 26 vdc, p out = 170 w cw, i dq = 2  700 ma, f1 = 880.0 mhz) ? 55 ? % output mismatch stress (v dd = 26 vdc, p out = 170 w cw, i dq = 2  700 ma, f = 880 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9180 mrf9180s 5?258 motorola wireless rf product device data   figure 1. 880 mhz broadband test circuit schematic z1 0.420 x 0.080 microstrip z2 0.190 x 0.080 microstrip z3 0.097 x 0.080 microstrip z4, z5, z26, z27 2.170 x 0.080 microstrip z6, z7 0.075 x 0.080 microstrip z8, z9 0.088 x 0.220 microstrip z10, z11 0.088 x 0.220 microstrip z12, z13 0.460 x 0.220 microstrip z14, z15 0.685 x 0.625 microstrip z16, z17 0.055 x 0.625 microstrip z18, z19 0.055 x 0.632 microstrip z20, z21 0.685 x 0.632 microstrip z22, z23 0.732 x 0.080 microstrip z24, z25 0.060 x 0.080 microstrip z28 0.230 x 0.080 microstrip z29 0.460 x 0.080 microstrip board 30 mil teflon ? , r = 2.55, material copper clad, 2 oz cu b1, b2, b5, b6 long ferrite beads, surface mount b3, b4 short ferrite beads, surface mount c1 0.6?4.5 pf variable capacitor c2, c3, c5, c6, c12, c14, 47 pf chip capacitors, b case c19, c20, c21, c22 c4, c9, c10, c15, c16 12 pf chip capacitors, b case c7 0.8?9.1 pf variable capacitor c8 7.5 pf chip capacitor, b case c11, c13 10 f, 35 v tantalum surface mount chip capacitors c17 3.6 pf chip capacitor, b case c18 5.1 pf chip capacitor, b case c23, c24, c26, c27 22 f, 35 v tantalum surface mount chip capacitors c25, c28 220 f, 50 v electrolytic capacitors c29 0.4?2.5 pf variable capacitor coax1, coax2 25 ? , semi rigid coax, 70 mil od, 1.05 long coax3, coax4 50 ? , semi rigid coax, 85 mil od, 1.05 long l1, l2, l3 18.5 nh mini spring inductors, coilcraft l4 12.5 nh mini spring inductor, coilcraft r1, r2 510 ? , 1/10 w chip resistors 34 ) /1 34 /1 /1   8 95 3 7 "  "   7  9 5 9   8  5 9  6 96 97 3 9" 96     5  8 98 9 /1 : : 9   9 : :5 9 9" 9 98 9 5  95 9 6  97 9 : 95 9 9   9 : 9 96 97 98 7  9 p 5 9 p  6   9 p  9 p  ; ; ; ; ; ;;; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?259 mrf9180 mrf9180s motorola wireless rf product device data figure 2. 880 mhz broadband test circuit component layout cut out area 9 9 95 9 9 96 97 98 9" 9 9 9 95 9 9 9 96   : :         :5 : 3 3 5 9 97 : 95 9 9 98  98 9" 9 : 9 96 97 $3487" 8""$! /<a / 3*.a" resistor resistor f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf9180 mrf9180s 5?260 motorola wireless rf product device data typical characteristics b6" b" b " b" b5" b" b"  " ""    6 7 8  " "" ??? ??? ??? ??? ??? ??? ??? ??? ??? figure 3. class ab broadband circuit performance   "   /1 /1 3  11<  figure 4. power gain versus output power figure 5. intermodulation distortion versus output power  5  6  7 76" 76 77" 77 8""   /1 /1 3  11<    /1 /1 3  11<  figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power  #2 a 3a )a0: $a)13$/ 1)a<131)a0:& a3 )a449)9@ah  b57 b5 b5 b5 b5" 5 "  " b" b7 b a3 )  449)9@ah $a)13$/ 1) <131)a0:& 3a) /1a31/3)<* "" -! 1 * <#%&( $a)13$/ 1)a<131)a0:& 5,0a,0*, 'a,0*, 6'a,0*,  #2  $ 3 78" 78 b b     0&   6"         6""
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5?261 mrf9180 mrf9180s motorola wireless rf product device data typical characteristics  7 "    7 b" b" b" " " " "  " ""   /1 /1 3  11<    /1 /1 3  11<  figure 8. power gain, efficiency and imd versus output power figure 9. power gain, efficiency and acpr versus output power  #2 a 3a )a0: $a)13$/ 1)a<131)a0:&  #2  $      6""
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 mrf9180 mrf9180s 5?262 motorola wireless rf product device data figure 10. series equivalent input and output impedance f mhz z source ? z load ? 865 880 895 2.95 ? j0.00 2.44 ? j1.18 2.48 ? j0.67 3.83 ? j1.02 3.55 ? j1.38 3.34 ? j1.51          6""
   6"     ?  2 ,&*  = %0   78 $!   7 $!   78 $!   7 $! z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?263 mrf18030ar3 mrf18030asr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma, cdma and multicarrier amplifier applications. specified for gsm 1805 ? 1880 mhz. ? typical gsm performance: power gain ? 14 db (typ) @ 30 watts efficiency ? 50% (typ) @ 30 watts ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 30 w output power ? excellent thermal stability ? available in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 83.3 0.48 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.1 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm/gsm edge 1.8 ? 1.88 ghz, 30 w, 26 v lateral n?channel rf power mosfets case 465e?04, style 1 ni?400 mrf18030ar3 case 465f?04, style 1 ni?400s mrf18030asr3 rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18030ar3 mrf18030asr3 5?264 motorola wireless rf product device data electrical characteristics (t c = 25 c, 50 ohm system unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) 2 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.29 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 1 adc) g fs ? 2 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.3 ? pf functional tests (in motorola test fixture) (2) output power, 1 db compression point (v dd = 26 vdc, i dq = 250 ma, f = 1805 ? 1880 mhz) p1db 27 30 ? watts common?source amplifier power gain @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1805 ? 1880 mhz) g ps 13 14 ? db drain efficiency @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1805 ? 1880 mhz) 46.5 50 ? % input return loss @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1805 ? 1880 mhz) irl ? ?12 ?9 db output mismatch stress @ 30 w (v dd = 26 vdc, i dq = 250 ma, f1 = 1805 ? 1880 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (2) device specifications obtained on a production test fixture. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?265 mrf18030ar3 mrf18030asr3 motorola wireless rf product device data 34 ) /1 34 /1 /1    9 9 5 /1     c1 1.8 pf, 100b chip capacitor c2 0.8 pf, 100b chip capacitor c3 1.0 pf, 100b chip capacitor c4, c5 1.2 pf, 100b chip capacitors c6, c7, c8 8.2 pf, 100b chip capacitors c9 0.3 pf, 100b chip capacitor c10 220  f, 63 v electrolytic capacitor r1 1.0 k ? , 1/8 w chip resistor (0805) r2, r3 10 k ? , 1/8 w chip resistors (0805) z1 0.874 x 0.087 microstrip z2 1.094 x 0.087 microstrip z3 0.257 x 0.633 microstrip z4 0.189 x 0.394 microstrip z5 0.335 x 0.394 microstrip z6 0.484 x 0.087 microstrip z7 0.877 x 0.087 microstrip z8 0.366 x 0.087 microstrip z9 0.600 x 0.087 microstrip 9 6 3 96 3 9" 97 ;  35 8 figure 1. 1805 ? 1880 mhz test fixture schematic 7 95 9 9 98   : < , 0 , 0  mrf18030ar3 mrf18030asr3 5?266 motorola wireless rf product device data typical characteristics 8 " "  6 " b5" " 3 o       0&     "
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 figure 6. power gain versus output power  #2 a 3a )a0:  9 7  9   5   "  7 5" 5 5 5 57 "    "" 8 "     0& 5"      "
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5?267 mrf18030ar3 mrf18030asr3 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z in ? z ol * ? 1710 1785 1805 2.92 + j8.24 4.15 + j10.38 3.84 + j9.75 4.18 + j9.06 4.59 + j9.46 4.98 + j9.06 z in = complex conjugate of the source impedance. z ol * = complex conjugate of the optimum load impedance at a given power, voltage, bias current and frequency. note: z ol * was chosen based on tradeoffs between gain, output power, and drain efficiency.          "
   5"  9 # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-     " $!   6" $! 1840 1880 1960 4.04 + j10.22 6.20 + j12.29 6.12 + j12.29 6.10 + j7.63 5.83 + j6.89 5.55 + j6.33 1990 2110 15.19 + j11.85 8.61 + j12.10 5.93 + j6.66 3.82 + j5.33   6" $!      " $!    ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18030br3 mrf18030bsr3 5?268 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma, cdma and multicarrier amplifier applications. specified for gsm 1930 ? 1990 mhz. ? typical gsm performance: power gain ? 14 db (typ) @ 30 watts efficiency ? 50% (typ) @ 30 watts ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 30 w cw output power ? excellent thermal stability ? available in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 83.3 0.48 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.1 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm/gsm edge 1.93 ? 1.99 ghz, 30 w, 26 v lateral n?channel rf power mosfets case 465e?04, style 1 ni?400 mrf18030br3 case 465f?04, style 1 ni?400s mrf18030bsr3 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?269 mrf18030br3 mrf18030bsr3 motorola wireless rf product device data electrical characteristics (t c = 25 c, 50 ohm system unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) 2 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.29 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 1 adc) g fs ? 2 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.3 ? pf functional tests (in motorola test fixture) (2) output power, 1 db compression point (v dd = 26 vdc, i dq = 250 ma, f = 1930 ? 1990 mhz) p1db 27 30 ? watts common?source amplifier power gain @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1930 ? 1990 mhz) g ps 13 14 ? db drain efficiency @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1930 ? 1990 mhz) 46.5 50 ? % input return loss @ 30 w (v dd = 26 vdc, i dq = 250 ma, f = 1930 ? 1990 mhz) irl ? ?12 ?9 db output mismatch stress @ 30 w (v dd = 26 vdc, i dq = 250 ma, f1 = 1930 ? 1990 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (2) device specifications obtained on a production test fixture. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18030br3 mrf18030bsr3 5?270 motorola wireless rf product device data c1 1.8 pf, 100b chip capacitor c2 0.8 pf, 100b chip capacitor c3 0.8 pf, 100b chip capacitor c4, c5 1.2 pf, 100b chip capacitors c6, c7, c8 8.2 pf, 100b chip capacitors c9 220  f, 63 v electrolytic capacitor r1 1.0 k ? , 1/8 w chip resistor (0805) r2, r3 10 k ? , 1/8 w chip resistors (0805) z1 0.496 x 0.087 microstrip z2 1.022 x 0.087 microstrip z3 0.257 x 0.633 microstrip z4 0.189 x 0.394 microstrip z5 0.335 x 0.394 microstrip z6 0.616 x 0.087 microstrip z7 0.845 x 0.087 microstrip z8 0.366 x 0.087 microstrip z9 0.500 x 0.087 microstrip figure 1. 1930 ? 1990 mhz test fixture schematic figure 2. 1930 ? 1990 mhz test fixture component layout 34 ) /1 34 /1 /1    9 9 5 /1     9 6 3 96 3 98 97 ;  35 8 7 95 9 9   : < , 0 , 0  5?271 mrf18030br3 mrf18030bsr3 motorola wireless rf product device data typical characteristics figure 3. wideband gain and irl at 30 w and 15 w output power figure 4. output power versus frequency figure 5. power gain versus output power figure 6. power gain versus output power figure 7. power gain versus output power figure 8. power gain and efficiency versus output power ) /1a31/3)a< 1    9  43/)9@ $!  #2 aa 3a )a0:  #2 o 5"  3 o    b  b" 5 b  b"  b  " 8"" 8 " """ " "  43/)9@ $! "" " " 77"         0&     "
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  8" $! 1    9   /1 /1 3  11<  #2 aa 3a )a0:   5   " " " 5" " " " "  a3 )a449)9@a  h  ? ?? ? ? ? ? ? 1 ?  9   /1 /1 3  11<  #2 aa 3a )a0: 7  5"  5"   5   " "   f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18030br3 mrf18030bsr3 5?272 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z source ? z load ? 1710 1785 1805 2.92 ? j8.24 4.15 ? j10.38 3.84 ? j9.75 4.18 ? j9.06 4.59 ? j9.46 4.98 ? j9.06          "
   5"  9   " $!   6" $! 1840 1880 1960 4.04 ? j10.22 6.20 ? j12.29 6.12 ? j12.29 6.10 ? j7.63 5.83 ? j6.89 5.55 ? j6.33 1990 2110 15.19 ? j11.85 8.61 ? j12.10 5.93 ? j6.66 3.82 ? j5.33   6" $!   " $!    ?  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?273 mrf18060a mrf18060ar3 mrf18060alsr3 mrf18060asr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. specified for gsm1805 ? 1880 mhz. ? typical gsm performance, full frequency band (1805 ? 1880 mhz) power gain ? 13 db (typ) @ 60 watts efficiency ? 45% (typ) @ 60 watts ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 60 watts cw output power ? excellent thermal stability ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c 25 c derate above 25 c p d 180 1.03 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.97 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1.80 ? 1.88 ghz, 60 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf18060a case 465a?06, style 1 ni?780s mrf18060alsr3, mrf18060asr3 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18060a mrf18060ar3 mrf18060alsr3 mrf18060asr3 5?274 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 6 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 500 madc) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.27 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.7 ? s dynamic characteristics input capacitance (including input matching capacitor in package) (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 160 ? pf output capacitance (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 740 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.7 ? pf functional tests (in motorola test fixture, 50 ohm system) common?source amplifier power gain @ 60 w (2) (v dd = 26 vdc, i dq = 500 ma, f = 1805 ? 1880 mhz) g ps 11.5 13 ? db drain efficiency @ 60 w (2) (v dd = 26 vdc, i dq = 500 ma, f = 1805 ? 1880 mhz) 43 45 ? % input return loss (2) (v dd = 26 vdc, p out = 60 w cw, i dq = 500 ma, f = 1805 ? 1880 mhz) irl ? ? ?10 db output mismatch stress (v dd = 26 vdc, p out = 60 w cw, i dq = 500 ma vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (2) to meet application requirements, motorola test fixtures have been designed to cover the full gsm1800 band, ensuring batch? to?batch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?275 mrf18060a mrf18060ar3 mrf18060alsr3 mrf18060asr3 motorola wireless rf product device data 34 ) /1 34 /1 /1    9 96 9 5 /1     c1 100 nf chip capacitor (1203) c2, c4, c7 10 pf chip capacitors c3 10  f, 35 v electrolytic tantalum capacitor c5 1.2 pf chip capacitor c6 1.0 pf chip capacitor r1, r3 2.2 k ? chip resistors (0805) r2, r4 2.7 k ? chip resistors (0805) r5 1.1 k ? chip resistor (0805) t1 bc847 transistor sot?23 z1 0.47 x 0.09 microstrip z2 1.16 x 0.09 microstrip z3 0.57 x 0.95 microstrip z4 0.59 x 1.18 microstrip z5 1.26 x 0.15 microstrip z6 1.15 x 0.09 microstrip z7 0.37 x 0.09 microstrip 9 6 3 9 3 95 9 ;  35 3 3 1   : < , 0 , 0  mrf18060a mrf18060ar3 mrf18060alsr3 mrf18060asr3 5?276 motorola wireless rf product device data ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? 1 3 9  2##=g 95 9 3 3 3 t1 3 35 3  ??? ??? ??? t2 9 9  i%2 z4 34 ) /1 34 /1 /1  96 97 5  9 6 ;  figure 3. 1800 ? 2000 mhz demo board schematic ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? ? ? ? ??  2##=g , 0 ? ? ? ? ? ? ? r5  i%2 figure 4. 1800 ? 2000 mhz demo board component layout 95 ?? ?? ?? ?? ?? ? c1 1  f chip capacitor (0805) c2 100 nf chip capacitor (0805) c3, c5, c8 10 pf chip capacitors, accu?p (0805) c4 10  f, 35 v tantalum electrolytic capacitor c6 1.8 pf chip capacitor, accu?p (0805) c7 1 pf chip capacitor, accu?p (0805) r1 10 ? chip resistor (0805) r2, r6 1 k ? chip resistors (0805) r3 1.2 k ? chip resistor (0805) r4 2.2 k ? chip resistor (0805) r5 5 k ? , smd potentiometer t1 lp2951 micro?8 voltage regulator t2 bc847 sot?23 npn transistor z1 0.159 x 0.055 microstrip z2 0.982 x 0.055 microstrip z3 0.087 x 0.055 microstrip z4 0.512 x 0.787 microstrip z5 0.433 x 1.220 microstrip z6 1.039 x 0.118 microstrip z7 0.268 x 0.055 microstrip substrate = 0.5 mm teflon ? glass, r = 2.55 mrf18060 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?277 mrf18060a mrf18060ar3 mrf18060alsr3 mrf18060asr3 motorola wireless rf product device data typical characteristics (data taken using wideband demonstration board) 3     figure 5. power gain versus output power   /1 /1 3  11< 7 " figure 6. output power versus supply voltage "    5""
""
   6 "
 7" 5   " " " "       0&   77" $!   7 "  7" 8" a/1 /1a 3a 11<           0&    ""
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  77" $! 5 5"  #2 a 3a )a0: " b" b b7 b" b b b b b b7     0&    ""
 #2 5  "  3a) /1a31/3)a< mrf18060a mrf18060ar3 mrf18060alsr3 mrf18060asr3 5?278 motorola wireless rf product device data f mhz z in ? z ol * ? 1700 1800 1900 0.60 + j2.53 0.92 + j3.42 0.80 + j3.20 2.27 + j3.44 2.05 + j3.05 1.90 + j2.90         ""
   "  9 2000 2100 1.31 + j4.00 1.07 + j3.59 1.64 + j2.88 1.29 + j2.99 figure 10. series equivalent input and output impedance     6"" $!   "" $!   ?   6"" $!   "" $!    z in = complex conjugate of the source impedance. z ol * = complex conjugate of the optimum load at a given voltage, p1db, gain, efficiency, bias current and frequency. note: z ol * was chosen based on tradeoffs between gain, output power, and drain efficiency. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?279 mrf18060b mrf18060br3 mrf18060blsr3 mrf18060bsr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. specified for gsm1930 ? 1990 mhz. ? gsm performance, full frequency band (1930 ? 1990 mhz) power gain ? 13 db (typ) @ 60 watts cw efficiency ? 45% (typ) @ 60 watts cw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 60 watts cw output power ? excellent thermal stability ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c > = 25 c derate above 25 c p d 180 1.03 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.97 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1.90 ? 1.99 ghz, 60 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf18060b case 465a?06, style 1 ni?780s mrf18060blsr3, mrf18060bsr3 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18060b mrf18060br3 mrf18060blsr3 mrf18060bsr3 5?280 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 6 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 500 madc) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.27 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.7 ? s dynamic characteristics input capacitance (including input matching capacitor in package) (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 160 ? pf output capacitance (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 740 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.7 ? pf functional tests (in motorola test fixture, 50 ohm system) common?source amplifier power gain @ 60 w (2) (v dd = 26 vdc, i dq = 500 ma, f = 1930 ? 1990 mhz) g ps 11.5 13 ? db drain efficiency @ 60 w (2) (v dd = 26 vdc, i dq = 500 ma, f = 1930 ? 1990 mhz) 40 45 ? % input return loss (2) (v dd = 26 vdc, p out = 60 w cw, i dq = 500 ma, f = 1930 ? 1990 mhz) irl ? ? ?10 db output mismatch stress (v dd = 26 vdc, p out = 60 w cw, i dq = 500 ma vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (2) to meet application requirements, motorola test fixtures have been designed to cover the full gsm1900 band, ensuring batch? to?batch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?281 mrf18060b mrf18060br3 mrf18060blsr3 mrf18060bsr3 motorola wireless rf product device data 34 ) /1 34 /1 /1    9 98 5 /1     c1, c3 10 pf, 100b chip capacitors c2 10  f, 35 v electrolytic tantalum capacitor c4, c8 1.2 pf, 100b chip capacitors c5 1.0 pf, 100b chip capacitor c6 2.2 pf, 100b chip capacitor c7, c9 0.3 pf, 100b chip capacitors r1, r2 10 k ? chip resistors (0805) r3 1.0 k ? chip resistor (0805) z1 0.60 x 0.09 microstrip z2 1.00 x 0.09 microstrip z3 0.51 x 0.94 microstrip z4 0.59 x 0.98 microstrip z5 0.79 x 0.09 microstrip z6 1.38 x 0.09 microstrip z7 0.79 x 0.09 microstrip pcb teflon ? glass 9 6 3 9 35 9 95 ;   figure 1. 1930 ? 1990 mhz test fixture schematic figure 2. 1930 ? 1990 mhz test fixture component layout 97 96 3  : < , 0 , 0  mrf18060b mrf18060br3 mrf18060blsr3 mrf18060bsr3 5?282 motorola wireless rf product device data ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? 1 3 9  2##=g 95 9 3 3 3 t1 3 35 3  ??? ??? ??? t2 9 9  i%2 z4 34 ) /1 34 /1 /1  96 97 5  9 6 ;  figure 3. 1800 ? 2000 mhz demo board schematic ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? ? ? ? ??  2##=g , 0 ? ? ? ? ? ? ? r5  i%2 figure 4. 1800 ? 2000 mhz demo board component layout 95 ?? ?? ?? ?? ?? ? c1 1  f chip capacitor (0805) c2 100 nf chip capacitor (0805) c3, c5, c8 10 pf chip capacitors, accu?p (0805) c4 10  f, 35 v tantalum electrolytic capacitor c6 1.8 pf chip capacitor, accu?p (0805) c7 1 pf chip capacitor, accu?p (0805) r1 10 ? chip resistor (0805) r2, r6 1 k ? chip resistors (0805) r3 1.2 k ? chip resistor (0805) r4 2.2 k ? chip resistor (0805) r5 5 k ? , smd potentiometer t1 lp2951 micro?8 voltage regulator t2 bc847 sot?23 npn transistor z1 0.159 x 0.055 microstrip z2 0.982 x 0.055 microstrip z3 0.087 x 0.055 microstrip z4 0.512 x 0.787 microstrip z5 0.433 x 1.220 microstrip z6 1.039 x 0.118 microstrip z7 0.268 x 0.055 microstrip substrate = 0.5 mm teflon ? glass, r = 2.55 mrf18060 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?283 mrf18060b mrf18060br3 mrf18060blsr3 mrf18060bsr3 motorola wireless rf product device data typical characteristics (data taken using wideband demonstration board) 3     figure 5. power gain versus output power   /1 /1 3  11< 7 " figure 6. output power versus supply voltage "    5""
""
   6 "
 7" 5   " " " "       0&   77" $!   7 "  7" 8" a/1 /1a 3a 11<           0&    ""
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 #2 5  "  3a) /1a31/3)a< mrf18060b mrf18060br3 mrf18060blsr3 mrf18060bsr3 5?284 motorola wireless rf product device data f mhz z source ? z load ? 1700 1800 1900 0.60 ? j2.53 0.92 ? j3.42 0.80 ? j3.20 2.27 ? j3.44 2.05 ? j3.05 1.90 ? j2.90         ""
   "  9 2000 2100 1.31 ? j4.00 1.07 ? j3.59 1.64 ? j2.88 1.29 ? j2.99 figure 10. series equivalent input and output impedance  2 ,&*   6"" $!   "" $!   ?   6"" $!   "" $!  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?285 mrf18085a mrf18085ar3 mrf18085alsr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 1.8 to 2.0 ghz. suit able for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. specified for gsm?gsm edge 1805 ? 1880 mhz. ? gsm and gsm edge performance, full frequency band (1805?1880 mhz) power gain ? 15 db (typ) @ 85 watts cw efficiency ? 52% (typ) @ 85 watts cw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, @ p1db output power, @ f = 1805 mhz ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.79 c/w esd protection characteristics test conditions class human body model 1 (typical) machine model m3 (typical) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm/gsm edge 1.8 ? 1.88 ghz, 85 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf18085a, mrf18085ar3 case 465a?06, style 1 ni?780s mrf18085alsr3 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18085a mrf18085ar3 mrf18085alsr3 5?286 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 600 madc) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.15 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 6.0 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 3.6 ? pf functional tests (in motorola test fixture, 50 ohm system) common?source amplifier power gain @ 85 w (2) (v dd = 26 vdc, i dq = 800 ma, f = 1805 ? 1880 mhz) g ps 13.5 15 ? db drain efficiency @ 85 w (2) (v dd = 26 vdc, i dq = 800 ma, f = 1805 ? 1880 mhz) 48 52 ? % input return loss @ 85 w (2) (v dd = 26 vdc, i dq = 800 ma, f = 1805 ? 1880 mhz) irl ? ?12 ?9 db p out , 1 db compression point (v dd = 26 vdc, i dq = 800 ma, f = 1805 ? 1880 mhz) p1db 83 90 ? watts output mismatch stress @ p1db (v dd = 26 vdc, i dq = 800 ma, f = 1805 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (2) to meet application requirements, motorola test fixtures have been designed to cover the full gsm1800 band, ensuring batch? to?batch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?287 mrf18085a mrf18085ar3 mrf18085alsr3 motorola wireless rf product device data   c1, c3, c6, c7 10 pf chip capacitors, b case, atc c2 1.8 pf chip capacitor, b case, atc c4 10  f, 35 v tantalum capacitor, avx c5, c8 1 nf chip capacitors, b case, atc c9 220  f, 63 v electrolytic capacitor, radial, philips c10 0.3 pf chip capacitor, b case, atc r1, r2 10 k  , 1/4 w chip resistors (1206) r3 1.0 k  , 1/4 w chip resistor (1206) z1 0.671 x 0.087 microstrip z2 0.568 x 0.087 microstrip z3 0.500 x 0.098 microstrip shorted stub z4 0.610 x 00.118 microstrip z5 0.331 x 1.153 microstrip z6 0.063 x 1.153 microstrip z7 0.122 x 0.925 microstrip z8 0.547 x 0.925 microstrip z9 0.394 x 0.177 microstrip z10 0.180 x 0.087 microstrip z11 0.686 x 0.087 microstrip z12 0.294 x 0.087 microstrip pcb taconic tlx8, 30 mils, r = 2.55 figure 1. 1.80 ? 1.88 ghz test fixture schematic 34 ) /1 34 /1 /1  9 95 9  /1 8 "  9 35 98 ;  3 9 97   3 ; 9 7 96 5  9"  6  figure 2. 1.80 ? 1.88 ghz test fixture component layout mrf18085a c?pp?02?01?2?rev0 cut out area 98 <,%# 9 3 3 9 9 35 9 9 95 96 97 9" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18085a mrf18085ar3 mrf18085alsr3 5?288 motorola wireless rf product device data typical characteristics """ " 6 "   /1 /1 3  11< figure 3. power gain versus output power  #2 aa 3a )a0:    5    " ""   /1 /1 3  11< figure 4. power gain versus output power  #2 aa 3a )a0: """ 8 6  1 9    9 "  9   /1 /1 3  11< figure 5. power gain versus output power  #2 aa 3a )a0:     0&    7""
  7" $! "" "    5   " 7  9 8"" " " 7""   7   43/)9@ $! figure 6. output power versus frequency  a/1 /1a 3a 11<     0&    7""
1 9    9     "  "" 7" " " " 7" 7" 7" 77" 8 " " 6 6 " b7 "  #2 o 5"   43/)9@ $! figure 7. power gain versus frequency  #2 aa 3a )a0: ) /1a31/3)a< 1 9    9  #2 o 7"  3 o 7"  3 o 5"   b  b7  b 5 b  b"  b 7"" 7 " 8"" """ "  " " "  #2   /1 /1 3  11< figure 8. power gain and efficiency versus output power  #2 aa 3a )a0: a3 )a449)9@ah     0&    7""
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5?289 mrf18085a mrf18085ar3 mrf18085alsr3 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z source ? z load ? 1710 1785 1.13 ? j3.62 1.69 ? j4.34 1.61 ? j4.23 1.79 ? j2.88 1.82 ? j3.15 1.90 ? j2.66         7""
   7  9   " ?   88" $!   88" $!   6" $!   6" $! 1805 1880 2.83 ? j5.25 2.09 ? j2.77 1930 4.39 ? j4.97 3.00 ? j5.18 2.01 ? j2.44 2.01 ? j2.57 1960 1990 6.59 ? j4.74 1.79 ? j2.37  2 ,&* z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  = %0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18085b mrf18085br3 mrf18085blsr3 5?290 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 1.9 to 2.0 ghz. suit able for tdma, cdma , and multicarrier amplifier applications. ? gsm and gsm edge performance, full frequency band (1930 ? 1990 mhz) power gain ? 12.5 db (typ) @ 85 watts cw efficiency ? 50% (typ) @ 85 watts cw ? internally matched, controlled q, for ease of use ? high gain, high efficiency, and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, @ p1db output power, @ f = 1930 mhz ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.79 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data gsm/gsm edge 1.9 ? 1.99 ghz, 85 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf18085b, mrf18085br3 case 465a?06, style 1 ni?780s mrf18085blsr3 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?291 mrf18085b mrf18085br3 mrf18085blsr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 600 madc) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.18 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 6.0 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 3.6 ? pf functional tests (in motorola test fixture, 50 ohm system) common?source amplifier power gain @ 85 w (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) g ps 11.5 12.5 ? db drain efficiency @ 85 w (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) 46 50 ? % input return loss @ 85 w (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) irl ? ?12 ?9 db p1 db output power (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) p1db 80 90 ? watts output mismatch stress @ p1db (v dd = 26 vdc, i dq = 600 ma, f = 1930 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18085b mrf18085br3 mrf18085blsr3 5?292 motorola wireless rf product device data c1, c10 1.0 nf chip capacitors, b case, atc c2 10  f, 35 v tantalum capacitor c3, c6 10 pf chip capacitors, b case, atc c4 3.3 pf chip capacitor, b case, atc c5 4.7 pf chip capacitor, b case, atc c7, c8 100 nf chip capacitors, accu?p (1206) c9 3.9 pf chip capacitor, b case, atc c11 470  f, 63 v electrolytic capacitor r1, r2 1.0 k  chip resistors (0805) r3 2 x 18 k  chip resistor (1206) z1 1.654 x 0.082 microstrip z2 0.207 x 0.082 microstrip z3 0.362 x 1.260 microstrip z4 0.583 x 0.669 microstrip z5 0.449 x 0.179 microstrip z6 0.877 x 0.082 microstrip z7 0.326 x 0.082 microstrip pcb 0.030 glass teflon ? (  r = 2.55) figure 1. 1.93 ? 1.99 ghz test fixture schematic figure 2. 1.93 ? 1.99 ghz test fixture component layout mrf18085b rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?293 mrf18085b mrf18085br3 mrf18085blsr3 motorola wireless rf product device data ??? ??? ??? t2 z4 figure 3. 1.93 ? 1.99 ghz gsm edge optimized demo board schematic figure 4. 1.93 ? 1.99 ghz gsm edge optimized demo board component layout b1 short rf ferrite bead, #27 430119447 c1, c2 1  f chip capacitors, accu?p (0805) c3, c4 1 nf chip capacitors, accu?p (0805) c5 10 pf chip capacitor, accu?p (0805) c7 1.5 pf chip capacitor, accu?p (0805) c8 8.2 pf chip capacitor, accu?p (0805) c9 1.0 pf chip capacitor, accu?p (0805) c10 100  f, 63 v electrolytic capacitor c11, c12 10 nf chip capacitors (0805) c13 10  f, 35 v tantalum capacitor c14 8.2 pf chip capacitor, accu?p (0805) r1 10 ? chip resistor (0805) r2 1 k ? chip resistor (0805) r3 1.2 k ? chip resistor (0805) r4 2.2 k ? chip resistor (0805) r5 5 k ? chip resistor (0805) r6, r7 9 ? chip resistors (1206) (18 ? x 18 ? ) t1 voltage regulator, micro?8, motorola #lp2951 t2 npn bipolar transistor, sot?23, motorola #bc847 z1 ? z9 printed transmission lines substrate 0.5 mm rogers 4350  r = 3.53) d c11 c4 c5 c8 c7 c9 c13 c14 c3 c2 r5 t2 r4 r3 r2 c1 r1 t1 r6 c10 + mrf18085 b1 c12 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18085b mrf18085br3 mrf18085blsr3 5?294 motorola wireless rf product device data typical characteristics (performed on a gsm edge optimized demo board) figure 5. power gain versus output power   /1 /1 3  11< " figure 6. error vector magnitude versus frequency "  43/)9@ !   #2 a 3a )a0: 8 $a333a913a$ )1/ah figure 7. power gain versus output power    /1 /1 3  11< 8 figure 8. evm and gain versus output power   /1 /1 3 0:
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5?295 mrf18085b mrf18085br3 mrf18085blsr3 motorola wireless rf product device data typical characteristics (performed on a gsm edge optimized demo board) figure 11. edge spectrum at 40 watts (avg.) output power b" b" b5" b" b " b" b6" b7" b8" b"" "" -! <#%  $! 9**, 8 ! 3* . b" 0:
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mrf18085b mrf18085br3 mrf18085blsr3 5?296 motorola wireless rf product device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 1805 1880 1.43 ? j3.74 1.5 ? j4.13 1.27 ? j3.95 2 ? j3.60 1.98 ? j3.57 2.13 ? j3.16         7""
   7  9   ?   88" $!   88" $!   7" $!   7" $! 1930 1990 1.86 ? j4.76 2.17 ? j3.36  = %0  2 ,&* z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?297 mrf18090a mrf18090as motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma, cdma and multicarrier amplifier applications. to be used in class ab for gsm and gsm edge cellular radio applications. ? gsm and gsm edge performances, full frequency band power gain ? 13.5 db (typ) @ 90 watts cw efficiency ? 52% (typ) @ 90 watts cw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.7 c/w esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1.80 ? 1.88 ghz, 90 w, 26 v lateral n?channel rf power mosfets case 465b?03, style 1 ni?880 mrf18090a case 465c?02, style 1 ni?880s mrf18090as rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18090a mrf18090as 5?298 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate quiescent voltage (v ds = 26 vdc, i d = 750 madc) v gs(q) 2.5 3.7 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.1 ? vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s dynamic characteristics reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.2 ? pf functional tests (in motorola test fixture) common?source amplifier power gain @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1805 ? 1880 mhz) g ps 12.0 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1805 ? 1880 mhz) 47 52 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, f = 1805 ? 1880 mhz) irl ? ? ?10 db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) to meet application requirements, motorola test fixtures have been designed to cover the full gsm1800 band, ensuring batch? to?batch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?299 mrf18090a mrf18090as motorola wireless rf product device data /1 34 ) /1 34 /1 /1   : < 95 96 9  6 7 c1 10  f, 35 v tantalum capacitor, vishay?sprague #293d106x9035d c2, c3 10 pf, 100b chip capacitor , atc #100b100gw c4 3.3 pf, 100b chip capacitor, atc #100b3r3bw c5, c6 6.8 pf, 100b chip capacitors, atc #100b6r8cw c7 12 pf, 100b chip capacitors, atc #100b120gw c8 220  f, 63 v electrolytic capacitor, philips #13668221 r1, r2 10 k  , 1/8 w chip resistors (0805) r3 1.0 k  , 1/8 w chip resistor (0805) z1 0.697 x 0.087 microstrip z2 0.087 x 0.197 microstrip z3 0.819 x 0.087 microstrip z4 0.181 x 0.144 microstrip z5 0.383 x 1.148 microstrip z6 0.400 x 1.380 microstrip z7 0.351 x 0.351 microstrip z8 0.126 x 0.087 microstrip z9 1.280 x 0.087 microstrip z10 1.275 x 0.055 microstrip pcb taconic tlx8?0300, 0.030 , r = 2.55 8 9 35 97 9 ;  3 " figure 1. mrf18090a 1.80 ? 1.88 ghz test fixture schematic figure 2. mrf18090a 1.80 ? 1.88 ghz test fixture component layout 3 9  mrf18090a mrf18090as 5?300 motorola wireless rf product device data 9  5?301 mrf18090a mrf18090as motorola wireless rf product device data typical characteristics     5  figure 5. power gain versus output power   /1 /1 3  11< " figure 6. output power versus supply voltage "    5""
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   8" %2 9 figure 10. large signal input and output impedance   7" $!   88" $!   " ?   7" $!   88" $! f mhz z source ? z load ? 1805 1880 1930 1.10 ? j5.85 2.05 ? j8.00 1.56 ? j6.75 1.15 ? j2.16 1.13 ? j2.60 1.30 ? j2.23 1990 2.30 ? j7.30 0.82 ? j2.90 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  2 ,&*  = %0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?303 mrf18090b mrf18090bs motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1.9 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for gsm and edge cellular radio applications. ? gsm and edge performances, full frequency band power gain ? 13.5 db (typ) @ 90 watts (cw) efficiency ? 45% (typ) @ 90 watts (cw) ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 90 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.7 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1.90 ? 1.99 ghz, 90 w, 26 v lateral n?channel rf power mosfets case 465b?03, style 1 (ni?880) (mrf18090b) case 465c?02, style 1 (ni?880s) (mrf18090bs) rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf18090b mrf18090bs 5?304 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate quiescent voltage (v ds = 26 vdc, i d = 750 madc) v gs(q) 2.5 3.7 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.1 ? vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s dynamic characteristics reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.2 ? pf functional tests (in motorola test fixture) common?source amplifier power gain @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 ? 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 ? 1990 mhz) 40 45 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, f = 1930 ? 1990 mhz) irl ? ? ?10 db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) to meet application requirements, motorola test fixtures have been designed to cover the full gsm1900 band, ensuring batch? to?batch consistency. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?305 mrf18090b mrf18090bs motorola wireless rf product device data c1 1.0  f chip capacitor (0805) c2 1.0 nf chip capacitor (0805) c3, c4 6.8 pf, 100b chip capacitors c5 220  f, 50 v electrolytic capacitor c6, c7 12 pf, 100b chip capacitors r1 2.2 k  chip resistor (0805) r2, r3, r6 1.0 k  chip resistors (0805) r4 10 k ? chip resistor (0805) r5 6.8 k ? chip resistor (0805) t1 bc847 sot?23 z1 0.85 x 0.09 microstrip z2 printed inductance z3 printed inductance (butterfly) z4 0.70 x 0.09 microstrip z5 0.36 x 0.09 microstrip z6 0.21 x 1.25 microstrip z7 0.45 x 1.18 microstrip z8 1.37 x 0.05 microstrip z9 0.39 x 0.09 microstrip z10 1.25 x 0.09 microstrip pcb teflon ? glass figure 1. 1.93 ? 1.99 mhz test fixture schematic figure 2. 1.93 ? 1.99 ghz test fixture component layout 34 ) /1 34 /1 /1    9 96 9  /1   6 8  " 3 9 3 9 95 ;  3 1 7 9 3 35 3 5  3 , 0 1 3 3 3 9 95 96 , 0 9 9 35 9 mrf18090b 3  : <  mrf18090b mrf18090bs 5?306 motorola wireless rf product device data figure 3. 1.93 ? 1.99 ghz demo board schematic 9  , 0 9 3 3 3 3 1 35 1 97 9" 98 3 9 96 9 9 95 5?307 mrf18090b mrf18090bs motorola wireless rf product device data typical characteristics 3      figure 5. power gain versus output power   /1 /1 3  11< " figure 6. output power versus supply voltage "    ""
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   8" %2 9 figure 10. large signal input and output impedance   7" $!   88" $!   " ?   7" $!   88" $! f mhz z source ? z load ? 1805 1880 1930 1.10 ? j5.85 2.05 ? j8.00 1.56 ? j6.75 1.15 ? j2.16 1.13 ? j2.60 1.30 ? j2.23 1990 2.30 ? j7.30 0.82 ? j2.90 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  2 ,&*  = %0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?309 mrf19030r3 mrf19030sr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for class ab pcn and pcs base station applications with frequencies from 1.8 to 2.0 ghz. suitable for fm, tdma, cdma and multicarrier amplifier applications. ? cdma performance @ 1990 mhz, 26 volts is?97 cdma pilot, sync, paging, traffic codes 8 thru 13 885 khz ? ?47 dbc @ 30 khz bw 1.25 mhz ? ?55 dbc @ 12.5 khz bw 2.25 mhz ? ?55 dbc @ 1 mhz bw output power ? 4.5 watts avg. power gain ? 13.5 db efficiency ? 17% ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 1.93 ghz, 30 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 83.3 0.48 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.1 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2.0 ghz, 30 w, 26 v lateral n?channel rf power mosfets case 465e?04, style 1 ni?400 mrf19030r3 case 465f?04, style 1 ni?400s mrf19030sr3 rev 8 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19030r3 mrf19030sr3 5?310 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 20 a) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 300 ma) v gs(q) 2 3.3 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.29 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 1 adc) g fs ? 2 ? s dynamic characteristics input capacitance (including input matching capacitor in package) (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c iss ? 98.5 ? pf output capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c oss ? 37 ? pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 1.3 ? pf functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1960.0 mhz, f2 = 1960.1 mhz) g ps ? 13 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1960.0 mhz, f2 = 1960.1 mhz) ? 36 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1960.0 mhz, f2 = 1960.1 mhz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1960.0 mhz, f2 = 1960.1 mhz) irl ? ?13 ? db two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz and f1 = 1990.0 mhz, f2 = 1990.1 mhz) g ps 12 13 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz and f1 = 1990.0 mhz, f2 = 1990.1 mhz) 33 36 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz and f1 = 1990.0 mhz, f2 = 1990.1 mhz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 300 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz and f1 = 1990.0 mhz, f2 = 1990.1 mhz) irl ? ?13 ?9 db output mismatch stress (v dd = 26 vdc, p out = 30 w cw, i dq = 300 ma, f = 1930 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?311 mrf19030r3 mrf19030sr3 motorola wireless rf product device data figure 1. mrf19030 test circuit schematic b1 ? b5 short ferrite beads c1, c7 10 pf chip capacitors, b case c2, c8 470 f, 35 v electrolytic capacitors c3, c5 0.1 f chip capacitors, b case c4, c6 5.1 pf chip capacitors, b case c9 22 f tantalum chip capacitor c10 0.4 ? 2.5 pf variable capacitor, johanson gigatrim l1 ? l4 12.5 nh inductors r1 ? r7 12 ? chip resistors (0805) z1 0.080 x 0.595 microstrip z2 0.080 x 0.600 microstrip z3 0.080 x 0.480 microstrip z4 0.325 x 0.280 microstrip z5 0.510 x 0.200 microstrip z6 0.510 x 0.200 microstrip z7 0.325 x 0.280 microstrip z8 0.080 x 0.480 microstrip z9 0.080 x 0.530 microstrip z10 0.080 x 0.671 microstrip substrate 0.030 x 3.00 x 5.00 glass teflon ? , arlon figure 2. mrf19030 test circuit component layout 3 :5 9 97 9" 9   : : 3 : 36 9 96 3 9 9 98 5  3 : 35 95 3 $348"5" 3*.a" 34 ) /1 34 /1 /1     9 96 9 ;  /1   9 8 "  5 97 ; 9 6 7  95 : 3 : 3 9   98 5 :5 3 : 3 : 36  ; 35 3 9" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19030r3 mrf19030sr3 5?312 motorola wireless rf product device data typical characteristics a3 )a449)9@aha  #2 a 3a )a0: e 9)1a9 ))a 3a3 1)a0: figure 3. class ab broadband circuit performance  43/)9@ $! " 8" figure 4. cdma acpr, power gain and drain efficiency versus output power   /1 /1 3  11< .( 9$  " 8" """ 5  8"" b5 figure 5. intermodulation distortion versus output power   /1 /1 3  11<  b figure 6. intermodulation distortion products versus output power   /1 /1 3  11<  figure 7. power gain versus output power   /1 /1 3  11<  "" " " 5      0&    5""
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5?313 mrf19030r3 mrf19030sr3 motorola wireless rf product device data f mhz z source ? z load ? 1930 1960 1990 10.57 ? j7.69 10.47 ? j7.21 10.54 ? j7.43 5.81 ? j5.01 5.84 ? j4.67 5.84 ? j4.35         5""
   5"   figure 9. series equivalent input and output impedance   88" $!    ?   85" $!   88" $!   85" $! z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  2 ,&*  = %0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19045r3 mrf19045sr3 5?314 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical cdma performance @ 1960 mhz, 26 volts, i dq = 550 ma multi?carrier cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 9.5 watts avg. power gain ? 14.9 db efficiency ? 23.5% adjacent channel power ? 885 khz: ?50 dbc @ 30 khz bw im3 ? ?37 dbc ? 100% tested under 2?carrier n?cdma ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 1.93 ghz, 45 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 105 0.60 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.65 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1990 mhz, 45 w, 26 v lateral n?channel rf power mosfets case 465e?04, style 1 ni?400 mrf19045r3 case 465f?04, style 1 ni?400s mrf19045sr3 rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?315 mrf19045r3 mrf19045sr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 550 madc) v gs(q) 3 3.8 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.19 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.2 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss ? 1.8 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier n?cdma, 1.2288 mhz channel bandwidth, im3 measured in 1.2288 mhz integrated bandwidth. acpr measured in 30 khz integrated bandwidth. common?source amplifier power gain (v dd = 26 vdc, p out = 9.5 w avg, 2?carrier n?cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 =1987.5 mhz, f2 = 1990 mhz) g ps 13 14.5 ? db drain efficiency (v dd = 26 vdc, p out = 9.5 w avg, 2?carrier n?cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 =1987.5 mhz, f2 = 1990 mhz) 21 23.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 9.5 w avg, 2?carrier n?cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 =1987.5 mhz, f2 = 1990 mhz; im3 measured in a 1.2288 mhz integrated bandwidth centered at f1 ?2.5 mhz and f2 +2.5 mhz, referenced to the carrier channel power) im3 ? ?37 ?35 dbc adjacent channel power ratio (v dd = 26 vdc, p out = 9.5 w avg, 2?carrier n?cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; acpr measured in a 30 khz integrated bandwith centered at f1 ?885 khz and f2 +885 khz) acpr ? ?51 ?45 dbc input return loss (v dd = 26 vdc, p out = 9.5 w avg, 2?carrier n?cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 =1987.5 mhz, f2 = 1990 mhz) irl ? ?16 ?9 db p out , 1 db compression point (v dd = 26 vdc, i dq = 550 ma, f = 1990 mhz) p1db ? 45 ? w output mismatch stress (v dd = 26 vdc, p out = 45 w cw, i dq = 550 ma, f = 1930 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19045r3 mrf19045sr3 5?316 motorola wireless rf product device data figure 1. 1930 ? 1990 mhz 2-carrier n-cdma test circuit schematic 34 /1 /1 5  9 9 3 95 ; 96 9 97 9  6   9 9"  98 7 9 ; z8 0.216 x 0.047 microstrip z9 0.519 x 0.254 microstrip z10 0.874 x 0.081 microstrip z11 0.645 x 0.081 microstrip pcb arlon gx0300-55-22, 30 mils, r = 2.55 z1 1.336 x 0.081 microstrip z2 0.693 x 0.081 microstrip z3 1.033 x 0.047 microstrip z4 0.468 x 0.047 microstrip z5 0.271 x 0.460 microstrip z6 0.263 x 0.930 microstrip z7 1.165 x 0.047 microstrip note: z3, z4, z7, z8 lengths and component placement tolerances are 0.050 . zx lengths are microstrip lengths between components, center-line to center-line. all component and z-length tolerances are 0.015 , except as noted. ;;   34 ) /1     3 ; 8 " 95 : 3 :  35 : 3 9 table 1. 1930 ? 1990 mhz 2-carrier n-cdma test circuit component designations and values designators description b1, b2 0.120 x 0.333 x 0.100 , surface mount ferrite beads, fair rite #2743019446 c1, c2 10  f, 35 v tantalum surface mount chip capacitors, kemet #t495x106k035as4394 c3, c11 0.1  f chip capacitors, kemet #cdr33bx104akws c4, c8 24 pf chip capacitors, b case, atc #100b240jp500x c5 470 pf chip capacitor, b case, atc #100b471jp200x c6, c7 11 pf chip capacitors, b case, atc #100b110jp500x c9, c10, c12 22  f, 35 v tantalum surface mount chip capacitors, kemet #t491x226k035as4394 c13 8.2 pf chip capacitor, b case, atc #100b8r2cp500x r1 560 k ? , 1/4 w chip resistor (0.08 x 0.13 ) r2, r3, r4, r5 8.2 ? , 1/4 w chip resistors (0.08 x 0.13 ), garrett instruments #rm73b2b110jt w1, w2 solid copper buss wire, 16 awg ws1, ws2 beryllium copper wear blocks (0.005 x 0.150 x 0.350 ) nominal f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?317 mrf19045r3 mrf19045sr3 motorola wireless rf product device data figure 2. 1930 ? 1990 mhz 2-carrier n-cdma test circuit component layout 9 95 9  <  : 3 3 35 3 3 : 9 95 9 9 c6 96 97 98 9" mrf19045/s rev?0 9 < f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19045r3 mrf19045sr3 5?318 motorola wireless rf product device data typical characteristics "  "  5" 5 8"" 85" 8" 88" "" b" b " b" b5" b" b" " figure 3. 2-carrier n?cdma acpr, im3, power gain and drain efficiency versus output power figure 4. 2-carrier n-cdma acpr, im3, power gain, irl and drain efficiency versus output power figure 5. 2-carrier n-cdma im3 versus output power   /1 /1 3  11<  .( q9%,,*, )q9$  figure 6. 2-carrier n-cdma acpr versus output power 5 9 3a e 9)1a9 ))a 3a3 1a0:&  #2 a 3a )a0: $5a13a33 )13$/ 1)a<131)a0:& a3 )a449)9@aha  #2 a 3a )a0:   /1 /1 3  11<  .( q9%,,*, )q9$  $5a0:& 9 3a0:& " "  "  5" 5 " 5 678" b6" b b" b b " b b" b5 b5"  #2 9 3 $5  #2 9 3 $5 3  43/)9@ $! $5a0:& 9 3a0:& 3a0: a3 )a449)9@aha  #2 a 3a )a0: b b " b b" b5 b5" " 8" 5 "
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  8" $!   8 $! 77 $! < ,&* 9'%*= :%0+0' 8 9 4 9%,,*, 87 0: *%-l .( 3% o ""h , i%i=g 994 figure 8. cw output power, power gain and drain efficiency versus input power " " " 5" " " " 6" "" " "  "  5" 5 "  "   5    6  #2  0: 50:   ) /1 3  11< 9 a3 )a449)9@ah a/1 /1a 3a 11   8" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?319 mrf19045r3 mrf19045sr3 motorola wireless rf product device data typical characteristics figure 9. cw two-tone power gain, imd and drain efficiency versus output power figure 10. cw two-tone power gain, input return loss, imd and drain efficiency versus frequency figure 11. cw two-tone intermodulation distortion versus output power  43/)9@ $! figure 12. cw two-tone power gain versus output power   /1 /1 3  11<   figure 13. cw two-tone intermodulation distortion products versus output power   /1 /1 3  11<    #2 a 3a )a0: a3 )a449)9@aha  #2 a 3a )a0: " "  "  5" 5 " " " " "" b b" b b " b b" b5 b5" b "  "  5" 5 " 8"" 85" 8" 88" "" b5 b5" b b" b b" b "  #2 3 $ b6" b b" b b " b b" b5 b5" b " " " "" 5" 5 "   "   " " " " "" b8" b7" b6" b" b " b" b5" b" " " " ""   /1 /1 3  11<     /1 /1 3  11<   a3 )a449)9@ah  #2 a 3a )a0: $a)13$/ 1)a<131)aa0:&a3a0: $a)13$/ 1)a<131)a0:&  #2 $ 5 "
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mrf19045r3 mrf19045sr3 5?320 motorola wireless rf product device data figure 15. series equivalent input and output impedance f mhz z source ? z load ? 1930 1960 1990 15.52 ? j16.5 11.11 ? j13.01 14.24 ? j14.44 4.52 ? j1.86 3.85 ? j1.04 3.44 ? j0.69         "
   8  .( q9%,,*, )b9$    ?   85" $!   85" $!   88" $!   88" $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?321 mrf19060 mrf19060r3 mrf19060sr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.9 to 2.0 ghz. suitable for cdma, td ma, gsm and multicarrier amplifier applications. ? typical cdma performance: 1960 mhz, 26 volts is?97 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 7.5 watts power gain ? 12.5 db adjacent channel power ? 885 khz: ?47 dbc @ 30 khz bw 1.25 mhz: ?55 dbc @ 12.5 khz bw 2.25 mhz: ?55 dbc @ 1 mhz bw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 1.93 ghz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 180 1.03 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.97 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1990 mhz, 60 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf19060r3 case 465a?06, style 1 ni?780s mrf19060sr3 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19060 mrf19060r3 mrf19060sr3 5?322 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 6 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.7 ? s gate threshold voltage (v ds = 10 vdc, i d = 300 adc) vgs (th) 2 ? 4 v gate quiescent voltage (v ds = 26 vdc, i d = 500 madc) v gs(q) 2.5 3.9 4.5 v drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.27 ? v dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 2.7 ? pf functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 500 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) g ps 11 12.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 500 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) 33 36 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 500 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) imd ? ?31 ?28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 500 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) irl ? ?12 ? db p out , 1 db compression point (v dd = 26 vdc, p out = 60 w cw, f = 1990 mhz) p1db ? 60 ? w output mismatch stress (v dd = 26 vdc, p out = 60 w cw, i dq = 500 ma, f = 1930 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?323 mrf19060 mrf19060r3 mrf19060sr3 motorola wireless rf product device data figure 1. mrf19060 test circuit schematic 34 ) /1 34 /1 /1     9" 9 9 ; 3 ; 5  /1   97 9 ; 8 6 7 95 9 98 9 3 35   6 7 " 9 : 96 3 :5  5     9 b2 ? b3 ferrite beads, fair rite, 2743019447 c1 10 f, 50 v electrolytic capacitor, panasonic #ecev1hv100r c2, c7 1000 pf chip capacitors, b case, atc #100b102jca500x c3, c8 0.10 f chip capacitors, b case, kemet #cdr33bx104akws c4 5.1 pf chip capacitor, b case, atc #100b5r1jca500x c5 6.2 pf chip capacitor, b case, atc #100b6r2jca500x c6 22 f, 35 v tantalum capacitor, smt, sprague c9 0.8 pf ? 8.0 pf variable capacitor, johanson gigatrim c10, c11 10 pf chip capacitors, b case, atc #100b100jca500x c12 0.4 pf ? 2.5 pf variable capacitor, johanson gigatrim r1 1 k ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r2 560 k ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r3 15 ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r4 10 ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 z1 0.580 x 0.074 microstrip z2 0.100 x 0.074 microstrip z3 0.384 x 0.074 microstrip z4 0.152 x 0.140 microstrip z5 0.090 x 0.102 microstrip z6 0.245 x 0.217 microstrip z7 0.090 x 0.737 microstrip z8 0.530 x 0.941 microstrip z9 1.010 x 0.050 microstrip z10 1.060 x 0.050 microstrip z11 0.446 x 1.137 microstrip z12 0.152 x 0.567 microstrip z13 0.183 x 0.220 microstrip z14 0.100 x 0.338 microstrip z15 0.480 x 0.142 microstrip z16 0.140 x 0.080 microstrip z17 0.173 x 0.080 microstrip z18 0.420 x 0.080 microstrip board 0.030 glass teflon ? arlon gx?0300?55?22, 2 oz cu ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19060 mrf19060r3 mrf19060sr3 5?324 motorola wireless rf product device data figure 2. mrf19060 test circuit component layout 1  1 : < 413/ 1 3 ) : < 413/ 9 3 3 35 95 9 9" 98 9 9 96 97 :5 3 : 9 9 9 mrf19060 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?325 mrf19060 mrf19060r3 mrf19060sr3 motorola wireless rf product device data typical characteristics a3 )a449)9@aha  #2 a 3a )a0: e 9)1a9 ))a 3a3 1a0: figure 3. class ab broadband circuit performance  43/)9@ $! " 8"  figure 4. cdma acpr, power gain and drain efficiency versus output power    /1 /1 3  11< .( 9$  " 8" """ 5  8"" b" figure 5. intermodulation distortion versus output power   /1 /1 3  11<  b figure 6. intermodulation products versus output power   /1 /1 3  11<  figure 7. power gain versus output power   /1 /1 3  11<  "" " " "       0&   "        ""
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mrf19060 mrf19060r3 mrf19060sr3 5?326 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z in ? z ol * ? 1930 1960 1990 1.65 + j0.67 1.60 + j0.20 1.64 + j0.45 1.85 ? j0.50 1.89 ? j0.74 1.96 ? j0.94 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.         ""
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0=%  02 ,     ?        85" $! 88" $! 88" $!   85" $! # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?327 mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2?carrier n?cdma performance for v dd = 26 volts, i dq = 850 ma, p out = 18 watts avg., f1 = 1960 mhz, f2 = 1962.5 mhz is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 ?885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 ?2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power ? 18 watts avg. power gain ? 13.0 db efficiency ? 23% acpr ? ?51 db im3 ? ?36.5 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 1.93 ghz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.79 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1990 mhz, 90 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf19085 case 465a?06, style 1 ni?780s mrf19085sr3, mrf19085lsr3 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 5?328 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 850 madc) v gs(q) 2.5 3.5 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.18 0.210 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 6 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss ? 3.6 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier n?cdma, 1.2288 mhz channel bandwidth carriers. peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12 13 ? db drain efficiency (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) 21 23 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); im3 measured over 1.2288 mhz bandwidth @ f1 ?2.5 mhz and f2 = +2.5 mhz) imd ? ?36.5 ?35 dbc adjacent channel power ratio (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); acpr measured over 30 khz bandwidth @ f1 ?885 mhz and f2 =+885 mhz) acpr ? ?51 ?48 dbc input return loss (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) irl ? ?12 ?9 db output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 850 ma, f = 1930 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?329 mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic unit max typ min symbol functional tests (in motorola test fixture) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) g ps ? 13 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) ? 36 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) imd ? ?31 ? dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 850 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) irl ? ?12 ? db p out , 1 db compression point (v dd = 26 vdc, i dq = 850 ma, f = 1990 mhz) p1db ? 90 ? w f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 5?330 motorola wireless rf product device data figure 1. 1930 ? 1990 mhz 2?carrier n?cdma test circuit schematic 34 ) /1 34 /1 /1     9 9  /1   5 97 7 6 9 96   35 9  ; 98 95 9 8 9" 9 9 ;; ; : 3 3 table 1. 1930 ? 1990 mhz 2?carrier n?cdma test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead 2743019447 fair rite c1 51 pf chip capacitor 100b510jca500x atc c2, c7 5.1 pf chip capacitors 100b5r1jca500x atc c3, c9 1000 pf chip capacitors 100b102jca500x atc c4, c10 0.1 f chip capacitors cdr33bx104akws kemet c5 0.1 f tantalum surface mount capacitor t491c105m050 kemet c6 10 pf chip capacitor 100b100jca500x atc c8 10 f tantalum surface mount capacitor t495x106k035as4394 kemet c11, c12 22 f tantalum surface mount capacitors t491x226k035as4394 kemet l1 1 turn, 20 awg, 0.100 id motorola n1, n2 type n flange mounts 3052-1648-10 omni spectra r1 1.0 k ? , 1/8 w chip resistor r2 220 k ? , 1/8 w chip resistor r3 10 ? , 1/8 w chip resistor z1 microstrip 0.750 x 0.0840 z2 microstrip 1.090 x 0.0840 z3 microstrip 0.400 x 1.400 z4 microstrip 0.520 x 0.050 z5 microstrip 0.540 x 1.133 z6 microstrip 0.400 x 0.140 z7 microstrip 0.555 x 0.0840 z8 microstrip 0.720 x 0.0840 z9 microstrip 0.560 x 0.070 board 0.030 glass teflon ? gx-0300-55-22, r = 2.55 keene pcb etched circuit boards mrf19085 rev. 4 cmr f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?331 mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 motorola wireless rf product device data figure 2. 1930 ? 1990 mhz 2?carrier n?cdma test circuit component layout : 9 9 9 95 9 96 97 98 9" 9 9 9 3 3 35  cut out area 3*. mrf19085 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 5?332 motorola wireless rf product device data typical characteristics b b " b b" b5 b5" b b" " ""  b6" b" b " b" b5" b" b" " b "" b56 b " b """   " 56 "" figure 3. 2-carrier n-cdma spectrum  43/)9@ $! figure 4. 2-carrier n?cdma acpr, im3, power gain and drain efficiency versus output power figure 5. intermodulation distortion products versus output power   /1 /1 3  11<  figure 6. third order intermodulation distortion versus output power and i dq 0:& $5a13a33 )13$/ 1)a<131)a0:& a3 )a449)9@aha  #2 a 3a )a0:   /1 /1 3  11< .( )q9$ $5a0:& 9 3a0:&  43/)9@ $! ) /1a31/3)a<   8 76 $!   8 $! 77 $! 9'%*= :%0+0' *%-l .(  87 o ""h , i%i=g 994 b6" b" b " b" b5" b" " " " 5" " " " "" 5,0 ,0*,  ' ,0*, 6' ,0*, )13$/ 1)a<131)a0:& $   /1 /1 3  11<  a3 )a449)9@aha  #2 a 3a )a0: $5a0:& 9 3a0:& 3  "
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5?333 mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 motorola wireless rf product device data typical characteristics 55 5 5 5 56 57 58 b5 b5 b5" b8 b7 b6 b "   "   "  6" 6 7"    3 )   8" $! "" -! 1 * <#%&( $   /1 /1 3  11<  #2 aa 3a )a0:  "  5" 5 " " ""  figure 10. two-tone power gain versus output power figure 11. two-tone broadband performance "  "  5" 5 " b5 b5" b b" b b" b 8" 85" 8" 8 " 8" 86" 87" 88" """     0&   8" $! "" -! 1 * <#%&(     "
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mrf19085 mrf19085r3 mrf19085sr3 mrf19085lsr3 5?334 motorola wireless rf product device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 1930 1960 0.75 ? j2.50 0.70 ? j2.40 1.05 ? j1.95 1.10 ? j1.85         7 "
   7  .( 1990 0.65 ? j2.35 1.05 ? j1.75   ?   85" $!   88" $!   85" $! z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  2 ,&*  = %0   88" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?335 mrf19090 mrf19090s mrf19090sr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for class ab pcn and pcs base station applications with frequencies from 1.9 to 2.0 ghz. su itable for cdma, tdma, gsm, and multicarrier amplifier applications. ? typical cdma performance: 1990 mhz, 26 volts is?97 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 9 watts power gain ? 10 db adjacent channel power ? 885 khz: ?47 dbc @ 30 khz bw 1.25 mhz: ?55 dbc @ 12.5 khz bw 2.25 mhz: ?55 dbc @ 1 mhz bw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 1.93 ghz, 90 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 270 1.54 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.65 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1990 mhz, 90 w, 26 v lateral n?channel rf power mosfets case 465b?03, style 1 (ni?880) (mrf19090) case 465c?02, style 1 (ni?880s) (mrf19090s) rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19090 mrf19090s mrf19090sr3 5?336 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 a) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s gate threshold voltage (v ds = 10 vdc, i d = 300 adc) vgs (th) 2.0 ? 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 750 madc) v gs(q) 2.5 3.8 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.10 ? vdc dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 4.2 ? pf functional tests (in motorola test fixture) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 750 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) g ps 10 11.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 750 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) 33 35 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 750 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) imd ? ?30 ?28 dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 750 ma, f = 1930 mhz and 1990 mhz, tone spacing = 100 khz) irl ? ?12 ? db p out , 1 db compression point (v dd = 26 vdc, p out = 90 w cw, f = 1990 mhz) p1db ? 90 ? w output mismatch stress (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, f = 1930 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?337 mrf19090 mrf19090s mrf19090sr3 motorola wireless rf product device data figure 1. mrf19090 test circuit schematic 34 ) /1 34 /1 /1     9 95 3 ; 5  /1   ; 8 9  6 7  95 :  9 :5 98 98 9" 97 96 3  9 97 : 9 9 9 9 96 : 9 9 b1, b2 2 ferrite beads, round, ferroxcube #56?590?65?3b b3, b34 ferrite beads, surface mount, ferroxcube c1, c18 0.4 ? 2.5 pf v ariable capacitors, johanson gigatrim #27285 c2, c5, c8 10 pf chip capacitors, b case, atc #100b100cca500x c3 12 pf chip capacitor, b case, atc #100b120cca500x c4 0.3 pf chip capacitor, b case, atc #100b0r3cca500x c6, c7 120 pf chip capacitors, b case, a tc #100b12r1cca500x c9, c12 0.1 f chip capacitors, kemet #cdr33bx104akws c10, c11 1000 pf chip capacitors, b case, atc #100b102jca50x c13, c17 22 f, 35 v tantalum chip capacitors, kemet #t491x226k035as4394 c14, c16 10 f, 35 v tantalum chip capacitors, kemet #t495x106k035as4394 c15, c19 1 f, 35 v tantalum chip capacitors, kemet #t495x105k035as4394 l1, l2 8 turns, #26 awg, 0.085 od, 0.330 long, copper wire r1, r2 270 ? , 1/4 w chip resistors, garrett instruments #rm73b2b271jt z1 zo = 50 ohms z2 zo = 50 ohms, lambda = 0.123 z3 zo = 15.24 ohms, lambda = 0.0762 z4 zo = 10.11 ohms, lambda = 0.0392 z5 zo = 6.34 ohms, lambda = 0.0711 z6 zo = 5.02 ohms, lambda = 0.0476 z7 zo = 5.54 ohms, lambda = 0.0972 z8 zo = 50.0 ohms, lambda = 0.194 z9 zo = 50.0 ohms raw pcb material 0.030 glass t eflon ? , r = 2.55, 2 oz copper, 3 x 5 dimensions ;; ; ; ; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19090 mrf19090s mrf19090sr3 5?338 motorola wireless rf product device data figure 2. mrf19090 test circuit component layout 34:  95 9 98 98 9" 34: 96 97 3 9 9 " " 3 95 9 97 9 96 34: 9 9 9 34:5 9 9  9/1/1 mrf19090 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?339 mrf19090 mrf19090s mrf19090sr3 motorola wireless rf product device data typical characteristics a3 )a449)9@aha  #2 a 3a )a0: e 9)1a9 ))a 3a3 1a0: figure 3. class ab performance versus frequency  43/)9@ $!  " 8"  figure 4. cdma performance acpr, gain and drain efficiency versus output power "    /1 /1 3  11<  .( 5 " 8" """ 8"" b5 figure 5. third order intermodulation distortion versus output power   /1 /1 3  11<  b figure 6. intermodulation products versus output power   /1 /1 3  11<  figure 7. power gain versus output power   /1 /1 3  11<  ""    5 " b " b" b5" b b " 5" " " 8" 87"  5" "" "  " "" "" 5 b" b" b5" 5" b" b b5 b b6" b" b " b" b" b5"  3a) /1a31/3)a< 77 -! 5" -!  $!  -!  $!  $! 8 9'%*= 4 ,+%,0 = >" %((> 1,%&>7b5 5 $a)13$/ 1)a<131)a0:& " 8 "
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    0&   8" $! "" -! 1 * <#%&( 5,0 ,0*, ' ,0*, 6' ,0*, f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19090 mrf19090s mrf19090sr3 5?340 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z in ? z ol * ? 1930 1960 1990 4.5 + j6.1 4.3 + j6.1 4.4 + j6.0 1.1 + j4.5 1.1 + j4.4 1.1 + j4.3         6 "
   8" %2      " ?        85" $! 88" $!   85" $! 88" $! # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ) *>    +%2 &' 2* i%2*0  ,%0* 2 i*+** (% # # +*, 0,% *&*&g %0 *,
0=%  02 ,  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?341 mrf19120 mrf19120s motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for cdma base station applications with frequencies from 1930 to 1990 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? cdma performance @ 1990 mhz, 26 volts is?97 cdma pilot, sync, paging, traffic codes 8 thru 13 885 khz ? ?47 dbc @ 30 khz bw 1.25 mhz ? ?55 dbc @ 12.5 khz bw 2.25 mhz ? ?55 dbc @ 1 mhz bw output power ? 15 watts (avg.) power gain ? 11.7 db efficiency ? 16% ? internally matched, controlled q, for ease of use ? high gain, high efficiency, high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 1990 mhz, 120 watts (cw) output power ? s?parameter characterization at high bias levels ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 389 2.22 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.45 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1990 mhz, 120 w, 26 v lateral n?channel rf power mosfets case 375d?04, style 1 ni?1230 mrf19120 case 375e?03, style 1 ni?1230s mrf19120s rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19120 mrf19120s 5?342 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain?source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 65 ? ? vdc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics (1) forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.8 ? s gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2.5 3 3.8 vdc gate quiescent voltage (v ds = 26 v, i d = 500 ma) v gs(q) 3 3.9 5 vdc drain?source on?voltage (v gs = 10 v, i d = 2 a) v ds(on) ? 0.38 0.5 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 2.8 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) common?source amplifier power gain (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, mrf19120 f1 = 1990.0 mhz, f2 = 1990.1 mhz) mrf19120s g ps 10.7 10.5 11.7 11.7 ? ? db drain efficiency (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 1990.0 mhz, f2 = 1990.1 mhz) 30 34 ? % intermodulation distortion (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, mrf19120 f1 = 1990.0 mhz, f2 = 1990.1 mhz) mrf19120s imd ? ? ?31 ?31 ?28 ?27 db input return loss (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 1990.0 mhz, f2 = 1990.1 mhz) irl ? ?12 ?9 db common?source amplifier power gain (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) g ps ? 11.7 ? db drain efficiency (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) ? 34 ? % intermodulation distortion (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) imd ? ?31 ? db input return loss (v dd = 26 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 1930.0 mhz, f2 = 1930.1 mhz) irl ? ?14 ? db power output, 1 db compression point (v dd = 26 vdc, cw, i dq = 2  500 ma, f1 = 1990.0 mhz) p1db ? 120 ? watts common?source amplifier power gain (v dd = 26 vdc, p out = 120 w cw, i dq = 2  500 ma, f1 = 1990.0 mhz) g ps ? 11 ? db (1) each side of device measured separately. (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?343 mrf19120 mrf19120s motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) (continued) drain efficiency (v dd = 26 vdc, p out = 120 w cw, i dq = 2  500 ma, f1 = 1990.0 mhz) ? 45 ? % output mismatch stress (v dd = 26 vdc, p out = 120 w cw, i dq = 2  500 ma, f = 1990 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19120 mrf19120s 5?344 motorola wireless rf product device data   98 96 : 9 9 ;   955 ; 95 35 95 95 ;  "   7 " /1 9  34 ) /1 95 9 p 34 /1 /1  98 7 5" 5 96 5  97 9 p   9 9 95 9 ; 9 p5 9   9 9 9" ; 95 9 ; 9 p b1, b2 ferrite beads, fair rite c1, c2 0.6 ? 4.5 pf variable capacitors, johanson gigatrim c3, c4, c9, c10 10 pf chip capacitors, b case, atc c5, c12 0.4 ? 2.5 pf variable capacitors, johanson gigatrim c6, c7 2.0 pf chip capacitors, b case, atc c8 1.1 pf chip capacitor, b case, atc c11 0.1 pf chip capacitor, b case, atc c13, c20, c29, c37 5.1 pf chip capacitors, b case, atc c14, c21, c28, c38 91 pf chip capacitors, b case, atc c15, c22, c31, c40 100 f, 50 v electrolytic capacitors, sprague c16, c23, c33, c43 0.039 f chip capacitors, b case, atc c17, c24, c32, c41 1000 pf chip capacitors, b case, atc c19, c25 0.020 f chip capacitors, b case, atc c27, c34, c36, c42 22 f, 35 v tantalum surface mount chip capacitors, kemet c30, c39 1.0 f, 35 v tantalum surface mount chip capacitors, kemet c35, c44 470 f, 63 v electrolytic capacitors, sprague coax1, coax2 25 ? , semi rigid coax, 70 mil od, 1.05 long coax3, coax4 50 ? , semi rigid coax, 85 mil od, 1.05 long l1 5.0 nh, minispring inductor, coilcraft l2 8.0 nh, minispring inductor, coilcraft l3, l4 5.60 nh, microspring inductors, coilcraft r1, r2 1 k ? , 1/2 w fixed metal film resistors, dale r3, r4 270 ? , 1/8 w fixed film chip resistors, dale r5, r6 1.0 k ? , 1/8 w fixed film chip resistors, dale z1 0.150 x 0.080 microstrip z2 0.320 x 0.080 microstrip z4, z5 1.050 x 0.080 microstrip z6, z7 0.120 x 0.080 microstrip z8, z9 0.140 x 0.080 microstrip z10, z11 0.610 x 0.080 microstrip z12, z13 0.135 x 0.080 microstrip z14, z15 0.130 x 0.080 microstrip z16, z17 0.300 x 0.350 microstrip z18, z19 0.150 x 0.500 microstrip z20, z21 0.075 x 0.500 microstrip z22, z23 0.330 x 0.500 microstrip z24, z25 0.100 x 0.550 microstrip z26, z27 0.175 x 0.550 microstrip z28, z29 0.045 x 0.550 microstrip z30, z31 0.190 x 0.325 microstrip z32, z33 0.080 x 0.325 microstrip z34, z35 0.515 x 0.080 microstrip z36, z37 0.020 x 0.080 microstrip z38, z39 0.565 x 0.080 microstrip z40 0.100 x 0.080 microstrip z41 0.470 x 0.080 microstrip z42 0.100 x 0.080 microstrip board material 0.03 teflon ? , r = 2.55 copper clad, 2 oz. cu connectors n?type panel mount, stripline 95 9 3  7 9        5  8  5 9 8 6 6 3 9" 9 : 3 95 96 98 97 95" 5 9 57 58  6 9" 8 5 5 56  55 95 956 957 958   9 " ; ; 5 3 3 9 figure 1. 1.93 ? 1.99 ghz broadband test circuit schematic ; ; ; ; ; ; ; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?345 mrf19120 mrf19120s motorola wireless rf product device data ; 3 3 ; ; ; ; ; : 96 9 9 98 95 9 35 3 9 95 9 9 9  3 3 : 9 95 9 9" 9 9    98 96 5   95" 96 97 95 955 95 95 95 98 9" 9 97 9  9 958 9 9 9" 9 95 95 957 956 $348"     figure 2. mrf19120 test circuit component layout f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19120 mrf19120s 5?346 motorola wireless rf product device data typical characteristics figure 3. power gain versus output power   /1 /1 3  11<  7 "   /1 /1 3  11<  " " "  b"   /1 /1 3  11<    /1 /1 3  11<  " "  5 5 b" " "" " 7 " ""  $a)13$/ 1)a<131)a0:& b6" b" b " b5" b" b5" b" " 8 a 3a )a0:  #2 " " ""     0&   88"" $!   88" $! b " b6"  a449)9@ah " 7" " b" b7" b" $a)13$/ 1)a<131)a0:& " "" a 3a )a0:  #2 ""
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1+ b1 * "" -! 1 * <#%&( 5  43/)9@ $!  85" " 8" 86  7 8 8  6  88" a 3a )a0: #2  #2 $     0&     ? ""
1+ b1 * "" -! 1 * <#%&( # +*,  "    <3 a449)9@ah "  " 5 b b b7 b5" b5 $a)13$/ 1) <131)a0:& <3    figure 4. class ab broadband circuit performance figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain, efficiency, and imd versus output power figure 8. power gain, efficiency, and acpr versus output power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?347 mrf19120 mrf19120s motorola wireless rf product device data f mhz z source ? z load ? 1930 1960 1990 1.64 ? j2.6 2.10 ? j1.4 2.10 ? j2.8 3.9 ? j1.7 4.8 ? j0.8 4.9 ? j0.3           ""
   "     88" $!   ?  2 ,&*  = %0   88" $! figure 9. series equivalent input and output impedance z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ;   85" $!   85" $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19125 mrf19125s mrf19125sr3 5?348 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2?carrier n?cdma performance for v dd = 26 volts, i dq = 1300 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 ?885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 ?2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power ? 24 watts avg. power gain ? 13.6 db efficiency ? 22% acpr ? ?51 db im3 ? ?37.0 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, 1990 mhz, 125 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 330 1.89 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.53 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 1990 mhz, 125 w, 26 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s mrf19125s case 465b?03, style 1 ni?880 mrf19125 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?349 mrf19125 mrf19125s mrf19125sr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 9 ? s gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 1300 madc) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.185 0.21 vdc dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 5.4 ? pf functional tests (in motorola test fixture) 2?carrier n?cdma, 1.2288 mhz channel bandwidth carriers. peak/avg = 9.8 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 26 vdc, p out = 24 w avg, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 12 13.5 ? db drain efficiency (v dd = 26 vdc, p out = 24 w avg, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) 19 22 ? % intermodulation distortion (v dd = 26 vdc, p out = 24 w avg, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; im3 measured over 1.2288 mhz bandwidth at f1 ?2.5 mhz and f2 +2.5 mhz) imd ? ?37 ?35 dbc adjacent channel power ratio (v dd = 26 vdc, p out = 24 w avg, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; acpr measured over 30 khz bandwidth at f1 ?885 mhz and f2 +885 mhz) acpr ? ?51 ?47 dbc input return loss (v dd = 26 vdc, p out = 24 w avg, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) irl ? ?13 ?9 db output mismatch stress (v dd = 26 vdc, p out = 125 w cw, i dq = 1300 ma, f = 1930 mhz, vswr = 5:1, all phase angles at frequency of test) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19125 mrf19125s mrf19125sr3 5?350 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic unit max typ min symbol functional tests (in motorola test fixture) two?tone common?source amplifier power gain (v dd = 26 vdc, p out = 125 w pep, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1990 mhz, tone spacing = 100 khz) g ps ? 13.5 ? db two?tone drain efficiency (v dd = 26 vdc, p out = 125 w pep, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1990 mhz, tone spacing = 100 khz) ? 35 ? % third order intermodulation distortion (v dd = 26 vdc, p out = 125 w pep, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1990 mhz, tone spacing = 100 khz) imd ? ?30 ? dbc input return loss (v dd = 26 vdc, p out = 125 w pep, i dq = 1300 ma, f1 = 1930 mhz, f2 = 1990 mhz, tone spacing = 100 khz) irl ? ?13 ? db p out , 1 db compression point (v dd = 26 vdc, i dq = 1300 ma, f = 1990 mhz) p1db ? 130 ? w f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?351 mrf19125 mrf19125s mrf19125sr3 motorola wireless rf product device data figure 1. mrf19125 test circuit schematic 34 ) /1 34 /1 /1     9 9  /1   5 97 6 9 96   35 9  ; 9" 95 9 7 9 9 95 ;; ; : 3 3 9 ; board 0.030 glass teflon ? , keene gx?0300?55?22, r = 2.55 pcb etched circuit boards mrf19125 rev. 5, cmr z1, z7 0.500 x 0.084 microstrip z2 1.105 x 0.084 microstrip z3 0.360 x 0.895 microstrip z4 0.920 x 0.048 microstrip z5 0.605 x 1.195 microstrip z6 0.800 x 0.084 microstrip z8 0.660 x 0.095 microstrip 98 ; table 1. mrf19125 test circuit component designations and values designators description b1 short ferrite bead, fair rite #2743019447 c1 51 pf chip capacitor, atc #100b510jca500x c2, c7 5.1 pf chip capacitors, atc #100b5r1jca500x c3, c10 1000 pf chip capacitors, atc #100b102jca500x c4, c11 0.1  f chip capacitors, kemet #cdr33bx104akws c5 0.1  f tantalum chip capacitor, kemet #t491c105m050 c6 10 pf chip capacitor, atc #100b100jca500x c8 10  f tantalum chip capacitor, kemet #t491x106k035as4394 c9, c12, c13, c14 22  f tantalum chip capacitors, kemet #t491x226k035as4394 l1 1 turn, #20 awg, 0.100 id, motorola n1, n2 type n flange mounts, omni spectra #3052?1648?10 r1 1.0 k ? , 1/8 w chip resistor r2 220 k ? , 1/8 w chip resistor r3 10 ? , 1/8 w chip resistor f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf19125 mrf19125s mrf19125sr3 5?352 motorola wireless rf product device data figure 2. mrf19125 test circuit component layout mrf19125 rev 5 3 3 35 9 9 95 9 9 9 95 97 96 9 9 9  : cut out 9" 98 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?353 mrf19125 mrf19125s mrf19125sr3 motorola wireless rf product device data typical characteristics b b " b b" b5 b5" b b" "  "  figure 3. 2-carrier cdma acpr, im3, power gain and drain efficiency versus output power figure 4. intermodulation distortion products versus output power   /1 /1 3  11<  figure 5. third order intermodulation distortion versus output power $5a13a33 )13$/ 1)a<131)a0:& a3 )a449)9@aha  #2 a 3a )a0:   /1 /1 3  11< .( )q9$ $5a0:& 9 3a0:&  43/)9@ $! ) /1a31/3)a<   8 76 $!   8 $! 77 $! 9'%*= :%0+0' *%-l .(  87 0: o ""h , i%i=g 994 b6" b" b " b" b5" b"  5 8 5  "  "  )13$/ 1)a<131)a0:& $   /1 /1 3  11<      0&    5""
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mrf19125 mrf19125s mrf19125sr3 5?354 motorola wireless rf product device data typical characteristics   /1 /1 3  11<   #2 aa 3a )a0:   5 5  "  "  figure 9. two-tone power gain versus output power figure 10. two-tone broadband performance "  "  5" 5 " b5 b5" b b" b b" b 8" 85" 8" 8 " 8" 86" 87" 88" """    6""
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5?355 mrf19125 mrf19125s mrf19125sr3 motorola wireless rf product device data figure 13. series equivalent input and output impedance f mhz z source ? z load ? 1930 1960 1990 1.43 ? j5.01 1.56 ? j4.93 1.51 ? j4.88 0.75 ? j0.93 0.71 ? j0.89 0.68 ? j1.02         5""
      .(   " ?   85" $!   88" $!   85" $!   88" $! z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,-  2 ,&*  = %0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21010r1 mrf21010lsr1 5?356 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? typical w?cdma performance: ?45 dbc acpr, 2140 mhz, 28 volts, 5 mhz offset/4.096 mhz bw, 15 dtch output power ? 2.1 watts power gain ? 13.5 db efficiency ? 21% ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr @ 28 vdc, 2170 mhz, 10 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ? 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 43.75 0.25 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 5.5 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 10 w, 28 v lateral n?channel broadband rf power mosfets case 360b?05, style 1 ni?360 mrf21010r1 case 360c?05, style 1 ni?360s mrf21010lsr1 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?357 mrf21010r1 mrf21010lsr1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 v, i d = 50 a) v gs(th) 2.5 3 4 vdc gate quiescent voltage (v ds = 28 v, i d = 100 ma) v gs(q) 2.5 4 4.5 vdc drain?source on?voltage (v gs = 10 v, i d = 0.5 a) v ds(on) ? 0.4 0.5 vdc forward transconductance (v ds = 10 v, i d = 1 a) g fs ? 0.95 ? s dynamic characteristics reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 1 ? pf functional tests (in motorola test fixture, 50 ohm system) two?tone common source amplifier power gain (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) g ps 12 13.5 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) 31 35 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) imd ? ?35 ?30 dbc input return loss (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) irl ? ?12 ?10 db output power, 1 db compression point, cw (v dd = 28 vdc, i dq = 100 ma, f = 2170 mhz) p1db ? 11 ? w common?source amplifier power gain (v dd = 28 vdc, p out = 10 w cw, i dq = 100 ma, f = 2170 mhz) g ps ? 12 ? db drain efficiency (v dd = 28 vdc, p out = 10 w cw, i dq = 100 ma, f = 2170 mhz) ? 42 ? % output mismatch stress (v dd = 28 vdc, p out = 10 w cw, i dq = 100 ma, f = 2170 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21010r1 mrf21010lsr1 5?358 motorola wireless rf product device data figure 1. mrf21010 test circuit schematic 34 ) /1 34 /1 /1    9 9" 95 ; /1   z6 0.453 x 1.118 microstrip z7 0.921 x 0.154 microstrip z8 0.925 x 0.087 microstrip pcb taconic tlx8?0300, 0.030 , r = 2.55  97 96  6 9  3 9 9 5 7 ; 98 ; 3 9  z1 0.964 x 0.087 microstrip z2 0.905 x 0.087 microstrip z3 0.433 x 0.512 microstrip z4 1.068 x 0.087 microstrip z5 0.752 x 0.087 microstrip table 1. mrf21010 test circuit component designations and values part description value, p/n or dwg manufacturer c1 * (eared) 2.2 pf chip capacitor, b case 100b2r2bw atc (earless) 1.8 pf chip capacitor, b case 100b1r8bw atc c2 0.5 pf chip capacitor, b case 100b0r5bw atc c3, c9 10 f, 35 v tantalum chip capacitors 293d106x9035d2t sprague?vishay c4, c7 1 nf chip capacitors, b case 100b102jw atc c5, c6 5.6 pf chip capacitors, b case 100b5r6bw atc c8 470 f, 63 v electrolytic capacitor c10 10 pf chip capacitor, b case 100b100gw atc n1, n2 type n connector flange mounts 3052?1648?10 macom r1 1.0 k  chip resistor (0805) r2 12  chip resistor (0805) * piece part depending on eared / earless version of the device. figure 2. mrf21010 test circuit component layout rf output 9 9 95 9 9 3 3 9 96 97 98 9" cutout area     rf input 9bp$b""b""b" $34"" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?359 mrf21010r1 mrf21010lsr1 motorola wireless rf product device data     9bp$b88b""b" 9 3 1 3 35  1 97 98 3 9 95 3 9 9   5  96  3 9" , 0 9 $34"" figure 3. mrf21010 demonstration board component layout table 2. mrf21010 demonstration board component designations and values designators description c1 1  f chip capacitor (0805), avx #08053g105zatea c2, c6 10  f, 35 v tantalum capacitors, vishay?sprague #293d106x9035d c3, c4 6.8 pf chip capacitors, accu?p (0805), avx #08051j6r8cbt c5 10 nf chip capacitor (0805), avx #08055c103katda c7 1.5 pf chip capacitor, accu?p (0805), avx #08051j2r2bbt c8, c10 0.5 pf chip capacitors, accu?p (0805), avx #08051j0r5bbt c9 10 pf chip capacitor, accu?p (0805), avx #08055j100gbt l1 19 mm 1.07 mm l2 7.7 mm 13.8 mm l3 9.3 mm 22 mm l4 17.7 mm 3.5 mm l5 3.4 mm 1.5 mm r1, r6 10  , 1/8 w chip resistors (0805) r2, r3 1 k  , 1/8 w chip resistors (0805) r4 2.2 k  , 1/8 w chip resistor (0805) r5 0  , 1/8 w chip resistor (0805) p1 5 k  potentiometer cms cermet multi?turn, bourns #3224w t1 voltage regulator, micro?8, motorola #lp2951 t2 bipolar npn transistor, sot?23, motorola #bc847 pcb rogers ro4350, 0.5 mm, r = 3.53 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21010r1 mrf21010lsr1 5?360 motorola wireless rf product device data typical characteristics figure 4. class ab broadband circuit performance  43/)9@ $! figure 5. w?cdma acpr, power gain and drain efficiency versus output power figure 6. intermodulation distortion versus output power    3 ) 1  1<  figure 7. intermodulation distortion products versus output power figure 8. power gain versus output power   /1 /1 3  11<  ""  """ b b 5 " b 5 "  b" 7"  " " "  " b5 figure 9. intermodulation and gain versus supply voltage   /1 /1 3  11<  5  " 5" " " $    7 0&   "        ""
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5?361 mrf21010r1 mrf21010lsr1 motorola wireless rf product device data f mhz z source ? z load ? 1990 2110 2230 2.85 ? j4.38 2.73 ? j6.19 2.89 ? j5.04 2.93 ? j1.71 2.76 ? j2.28 2.83 ? j2.59    7     ""
   0: 9 figure 10. series equivalent input and output impedance   " ?   88" $!   5" $!   88" $!   5" $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21030r3 mrf21030sr3 5?362 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 2.0 to 2.2 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? wideband cdma performance: ?45 db acpr @ 4.096 mhz, 28 volts output power ? 3.5 watts power gain ? 14 db efficiency ? 15% ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2.11 ghz, 30 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 83.3 0.48 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.1 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2.2 ghz, 30 w, 28 v lateral n?channel rf power mosfets case 465e?04, style 1 ni?400 mrf21030r3 case 465f?04, style 1 ni?400s mrf21030sr3 rev 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?363 mrf21030r3 mrf21030sr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 20 a) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 250 ma) v gs(q) 2 3.3 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.29 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 1 adc) g fs ? 2 ? s dynamic characteristics input capacitance (including input matching capacitor in package) (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c iss ? 98.5 ? pf output capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c oss ? 37 ? pf reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 1.3 ? pf functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) g ps ? 13 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) ? 33 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) imd ? ?30 ? dbc input return loss (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) irl ? ?13 ? db two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 12 13 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) 31 33 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) imd ? ?30 ?27.5 dbc input return loss (v dd = 28 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) irl ? ?13 ?9 db output mismatch stress (v dd = 28 vdc, p out = 30 w cw, i dq = 250 ma, f = 2110 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21030r3 mrf21030sr3 5?364 motorola wireless rf product device data figure 1. mrf21030 test circuit schematic 34 ) /1 34 /1 /1     9 98 9 ;  /1   b1, b2 short ferrite beads c1 1 pf chip capacitor c2 4.7 pf chip capacitor c3 0.5 pf chip capacitor c4 3.9 pf chip capacitor c5, c12 0.1 f chip capacitors c6, c13 470 f, 63 v electrolytic chip capacitors c7, c8 0.3 pf chip capacitors c9 3.6 pf chip capacitor c10 22 f tantalum chip capacitor c11 5.1 pf chip capacitor l1, l2 12.5 nh inductors r1, r2 12 ? chip resistors (1206) z1 0.153 x 0.087 microstrip z2 0.509 x 0.156 microstrip z3 0.572 x 0.087 microstrip z4 0.509 x 0.232 microstrip z5 0.277 x 0.143 microstrip z6 0.200 x 0.305 microstrip z7 0.200 x 0.511 microstrip z8 0.510 x 0.328 microstrip z9 0.608 x 0.081 microstrip pcb taconic tlx8, 30 mils, r = 2.55 5 95 9 7 8 6 9 9"    : 3 9 9  " 95 97 ; 9 ; figure 2. mrf21030 test circuit component layout 96 : 3 mrf 21030 rev 1 + + 9 9 95  9 97 96  98 9 9" : 3 9 95 9 9 3 :   , 0 , 0 : : cut out area : < 5?365 mrf21030r3 mrf21030sr3 motorola wireless rf product device data typical characteristics    7 0&   5"         "
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mrf21030r3 mrf21030sr3 5?366 motorola wireless rf product device data f mhz z source ? z load ? 2110 2140 2170 15.3 ? j9.4 14.3 ? j8.8 14.6 ? j9.4 3.7 ? j0.78 3.4 ? j0.37 3.0 + j0.13    7      "
   5"   figure 9. series equivalent input and output impedance    ?   " $!   6" $!   " $!   6" $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?367 mrf21045r3 mrf21045sr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 500 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bandwidth at f1 ?5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bandwidth at f1 ?10 mhz and f2 +10 mhz, peak/avg. = 8.3 db @ 0.01% probability on ccdf. output power ? 10 watts avg. efficiency ? 23.5% gain ? 15 db im3 ? ?37.5 dbc acpr ? ?41 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, 2170 mhz, 45 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 105 0.60 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.65 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 45 w, 28 v lateral n?channel rf power mosfets case 465e?04, style 1 ni?400 mrf21045r3 case 465f?04, style 1 ni?400s mrf21045sr3 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21045r3 mrf21045sr3 5?368 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 500 madc) v gs(q) 3 3.9 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.19 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 1 adc) g fs ? 3 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 1.8 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma. peak/avg. ratio = 8.3 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 10 w avg., i dq = 500 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 13.5 15 ? db drain efficiency (v dd = 28 vdc, p out = 10 w avg., i dq = 500 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 21 23.5 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 10 w avg., i dq = 500 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bandwidth at f1 ?10 mhz and f2 +10 mhz.) im3 ? ?37.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 10 w avg., i dq = 500 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz bandwidth at f1 ?5 mhz and f2 +5 mhz.) acpr ? ?41 ?38 dbc input return loss (v dd = 28 vdc, p out = 10 w avg., i dq = 500 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9 db output mismatch stress (v dd = 28 vdc, p out = 45 w cw, i dq = 500 ma, f = 2170 mhz vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?369 mrf21045r3 mrf21045sr3 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic unit max typ min symbol functional tests (in motorola test fixture, 50 ohm system) ? continued two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 500 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps ? 14.9 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 500 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) ? 36 ? % intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 500 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) imd ? ?30 ? dbc two?tone input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 500 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) irl ? ?12 ? db p out , 1 db compression point (v dd = 28 vdc, i dq = 500 ma, f = 2170 mhz) p1db ? 50 ? w f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21045r3 mrf21045sr3 5?370 motorola wireless rf product device data figure 1. mrf21045 test circuit schematic 34 ) /1 34 /1 /1     9 9  /1    97 8 9 96  6 3 9  ; 98 95 9 " 9" 9 ; ; : 3 3 35 board 0.030 glass teflon ? , keene gx?0300?55?22, r = 2.55 pcb etched circuit boards mrf21045 rev. 3, cmr z1, z9 0.750 x 0.084 transmission line z2 0.160 x 0.084 transmission line z3 1.195 x 0.176 transmission line z4 0.125 x 0.320 transmission line z5 1.100 x 0.045 transmission line z6 0.442 x 0.650 transmission line z7 0.490 x 0.140 transmission line z8 0.540 x 0.084 transmission line z10 0.825 x 0.055 transmission line 5 7 table 1. mrf21045 component designations and values designators description b1 short ferrite bead, fair rite, #2743019447 c1, c2, c6 43 pf chip capacitors, atc #100b430jca500x c7 5.6 pf chip capacitor, atc #100b5r6jca500x c3, c9 1000 pf chip capacitors, atc #100b102jca500x c4, c10 0.1  f chip capacitors, kemet #cdr33bx104akws c5 1.0  f tantalum chip capacitor, kemet #t491c105m050 c8 10  f tantalum chip capacitor, kemet #t495x106k035as4394 c11 22  f tantalum chip capacitor, kemet #t491x226k035as4394 l1 1 turn, #20 awg, 0.100 id, motorola n1, n2 type n flange mounts, omni spectra #3052?1648?10 r1 1.0 k ? , 1/8 w chip resistor r2 180 k ? , 1/8 w chip resistor r3, r4 10 ? , 1/8 w chip resistors f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?371 mrf21045r3 mrf21045sr3 motorola wireless rf product device data figure 2. mrf21045 test circuit component layout mrf21045 9 : : 95 9 9 3 3 35 : 9 9 97 96 9  98 3 9" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21045r3 mrf21045sr3 5?372 motorola wireless rf product device data typical characteristics 8 5   b5 b $    ""
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5?375 mrf21060 mrf21060r3 mrf21060sr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 2.1 to 2.2 ghz. suitable for w?cdma, cdma, tdma, gsm and multicarrier amplifier applications. ? typical w?cdma performance: 2140 mhz, 28 volts 5 mhz offset @ 4.096 mhz bw, 15 dtch output power ? 6.0 watts power gain ? 12.5 db drain efficiency ? 15% ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2.11 ghz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 180 0.98 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.02 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 60 w, 28 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf21060 case 465a?06, style 1 ni?780s mrf21060sr3 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21060 mrf21060r3 mrf21060sr3 5?376 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 6 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 500 madc) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.27 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.7 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 2.7 ? pf functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) g ps 11 12.5 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) 31 34 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) imd ? ?30 ?28 dbc input return loss (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) irl ? ?12 ? db p out , 1 db compression point (v dd = 28 vdc, p out = 60 w cw, f = 2170 mhz) p1db ? 60 ? w output mismatch stress (v dd = 28 vdc, p out = 60 w cw, i dq = 500 ma, f = 2110 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?377 mrf21060 mrf21060r3 mrf21060sr3 motorola wireless rf product device data figure 1. mrf21060 test circuit schematic 34 ) /1 34 /1 /1     98 9 9 ; 3 ; 5 /1   97 9 ; 7   95 9 9" 9 3 35    6 8 9 : 96 3 :5   5 " 9 b2 ? b3 ferrite beads, fair rite #2743019447 c1 10 f, 50 v electrolytic chip capacitor, panasonic #ecev1hv100r c2, c7 1000 pf chip capacitors, atc #100b102jca500x c3, c8 0.10 f chip capacitors, kemet #cdr33bx104akws c4, c5 4.7 pf chip capacitors, atc #100b4r7jca500x c6 22 f, 35 v tantalum surface mount chip capacitor, sprague c9, c11 9.1 pf chip capacitors, atc #100b9r1jca500x c10 0.8 pf ? 8.0 pf variable capacitor, johanson gigatrim c12 0.4 pf ? 4.5 pf variable capacitor, johanson gigatrim r1 1 k ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r2 560 k ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r3 10 ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r4 10 ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 z1 0.743 x 0.080 microstrip z2 0.070 x 0.100 microstrip z3 0.180 x 0.100 microstrip z4 0.152 x 0.293 microstrip z5 0.216 x 0.100 microstrip z6 0.114 x 0.410 microstrip z7 0.626 x 0.872 microstrip z8 1.050 x 0.050 microstrip z9 0.830 x 0.050 microstrip z10 0.596 x 1.040 microstrip z11 0.186 x 0.315 microstrip z12 0.097 x 0.525 microstrip z13 0.353 x 0.138 microstrip z14 0.112 x 0.080 microstrip z15 0.722 x 0.080 microstrip board 0.030 glass teflon ? , arlon gx?0300?55?22, 2 oz cu ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21060 mrf21060r3 mrf21060sr3 5?378 motorola wireless rf product device data figure 2. mrf21060 test circuit component layout 9 3 3 35 95 9 9" 98 9 1 3 ) : < 413/ 9 9 96 97 :5 3 : 9 9 1  1 : < 413/ mrf21060 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?379 mrf21060 mrf21060r3 mrf21060sr3 motorola wireless rf product device data typical characteristics a3 )a449)9@aha  #2 a 3a )a0: e 9)1a9 ))a 3a3 1a0: figure 3. class ab broadband circuit performance  43/)9@ $! " "  figure 4. w?cdma acpr, power gain and drain efficiency versus output power "   /1 /1 3  11< .( b9$  " "" 7" 5  "7" b" figure 5. intermodulation distortion versus output power   /1 /1 3  11<  b figure 6. intermodulation distortion products versus output power   /1 /1 3  11<  figure 7. power gain versus output power   /1 /1 3  11<  "" " " "      7 0&   "        ""
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mrf21060 mrf21060r3 mrf21060sr3 5?380 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z in ? z ol * ? 2110 2140 2170 2.40 + j0.55 2.08 + j1.23 2.26 + j0.87 3.07 + j2.05 2.89 + j2.38 2.66 + j2.71 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency.    7     ""
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5?381 mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 1000 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz, peak/avg. = 8.3 db @ 0.01% probability on ccdf. output power ? 19 watts avg. power gain ? 13.6 db efficiency ? 23% im3 ? ?37.5 dbc acpr ? ?41 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, 2170 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 224 1.28 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.78 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 90 w, 28 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf21085 case 465a?06, style 1 ni?780s mrf21085sr3, mrf21085lsr3 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 5?382 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) 3 3.9 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.18 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 6 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c rss ? 3.6 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.3 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12 13.6 ? db drain efficiency (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 20 23 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? ?37.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 ?5 mhz and f2 +5 mhz.) acpr ? ?41 ?38 dbc input return loss (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9 db output mismatch stress (v dd = 28 vdc, p out = 90 w cw, i dq = 1000 ma, f = 2170 mhz vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?383 mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (continued) two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps ? 13.6 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) ? 36 ? % two?tone intermodulation distortion (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) imd ? ?31 ? dbc input return loss (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) irl ? ?12 ? db p out , 1 db compression point (v dd = 28 vdc, i dq = 1000 ma, f = 2170 mhz) p1db ? 100 ? w f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 5?384 motorola wireless rf product device data figure 1. mrf21085 test circuit schematic 34 ) /1 34 /1 /1     9 9  /1   5 97 6 9 96   3 9  ; 98 95 9 7 9" 9 9 ;; ; : 3 3 35 board 0.030 glass teflon ? , keene gx?0300?55?22, r = 2.55 pcb etched circuit boards mrf21085 rev. 3, cmr z1 0.750 x 0.084 microstrip z2 1.015 x 0.084 microstrip z3 0.480 x 0.800 microstrip z4 0.750 x 0.050 microstrip z5 0.610 x 0.800 microstrip z6 0.885 x 0.084 microstrip z7 0.720 x 0.084 microstrip z8 0.800 x 0.070 microstrip table 1. mrf21085 test circuit component designations and values designators description b1 short ferrite bead, fair rite, #2743019447 c1, c6 43 pf chip capacitors, atc #100b430jca500x c2 10 pf chip capacitor, atc #100b100jca500x c3, c9 1000 pf chip capacitors, atc #100b102jca500x c4, c10 0.1  f chip capacitors, kemet #cdr33bx104akws c5 1.0  f tantalum chip capacitor, kemet #t491c105m050 c7 2.7 pf chip capacitor, atc #100b2r7jca500x c8 10  f tantalum chip capacitor, kemet #t495x106k035as4394 c11, c12 22  f tantalum chip capacitors, kemet #t491x226k035as4394 l1 1 turn, #20 awg, 0.100 id, motorola n1, n2 type n flange mounts, omni spectra #3052?1648?10 r1 1.0 k ? , 1/8 w chip resistor r2 180 k ? , 1/8 w chip resistor r3, r4 10 ? , 1/8 w chip resistors f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?385 mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 motorola wireless rf product device data figure 2. mrf21085 test circuit component layout mrf21085 3 3 35 9 9 95 9 9 9 97 96 9 9  : cut out 9" 98 3 : : rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 5?386 motorola wireless rf product device data typical characteristics b b " b b" b5 b5" b "  figure 3. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power figure 4. intermodulation distortion products versus output power   /1 /1 3  11<  figure 5. third order intermodulation distortion versus output power $5a13a33 )13$/ 1)a<131)a0:& a3 )a449)9@aha  #2 a 3a )a0:   /1 /1 3  11< .( )q9$ $5a0:& 9 3a0:&  43/)9@ $! ) /1a31/3)a<   5 $!    $! 57 $! 9'%*= :%0+0' b b" b " b" b5" b "  5" 5  "  )13$/ 1)a<131)a0:& $   /1 /1 3  11<     7 0&    """
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5?387 mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 motorola wireless rf product device data typical characteristics   /1 /1 3  11<   #2 aa 3a )a0:   5 5  "  figure 9. two-tone power gain versus output power figure 10. two-tone broadband performance "  "  5" 5 " b" b5 b5" b b" b b" "8 "  "  6" 7    5""
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mrf21085 mrf21085r3 mrf21085sr3 mrf21085lsr3 5?388 motorola wireless rf product device data figure 13. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 1.10 ? j3.71 1.12 ? j3.40 1.11 ? j3.57 1.23 ? j2.10 1.26 ? j1.92 1.25 ? j1.76    7     """
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5?389 mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 850 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 19 watts avg. power gain ? 14.5 db efficiency ? 26% im3 ? ?37.5 dbc acpr ? ?40.5 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 224 1.28 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 90 w cw case temperature 80 c, 19 w cw r jc 0.78 0.80 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 19 w avg., 2 x w?cdma, 28 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf5s21090l case 465a?06, style 1 ni?780s mrf5s21090lsr3 rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 5?390 motorola wireless rf product device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.9 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 850 madc) v gs(q) ? 3.9 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.25 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.7 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 19 w avg., i dq = 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14.5 ? db drain efficiency (v dd = 28 vdc, p out = 19 w avg., i dq = 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 24 26 ? % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 19 w avg., i dq = 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? ?37.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 19 w avg., i dq = 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 ?5 mhz and f2 +5 mhz.) acpr ? ?40.5 ?38 dbc input return loss (v dd = 28 vdc, p out = 19 w avg., i dq = 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?15 ?9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?391 mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 motorola wireless rf product device data figure 1. mrf5s21090 test circuit schematic z12 0.609 x 0.220 microstrip z13 0.290 x 0.106 microstrip z14 0.290 x 0.106 microstrip z15 0.080 x 0.025 microstrip z16 1.080 x 0.160 microstrip z17 0.180 x 0.080 microstrip z18 0.260 x 0.147 microstrip z19 0.500 x 0.080 microstrip z20 0.199 x 0.147 microstrip z21 0.365 x 0.080 microstrip pcb arlon gx0300?55?22, 0.03 , r = 2.55 z1 1.0856 x 0.080 microstrip z2 0.130 x 0.080 microstrip z3 0.230 x 0.080 microstrip z4 0.347 x 0.208 microstrip z5 0.090 x 0.208 microstrip z6 0.650 x 0.176 taper z7 0.623 x 0.610 microstrip z8 0.044 x 0.881 microstrip z9 0.044 x 0.869 microstrip z10 1.076 x 0.446 microstrip z11 0.320 x 0.393 microstrip 9 3     95 97 96 9 9 98 9 9" 9 34 /1 /1 34 ) /1 3   5  6 7 8    6 8  ; /1 35 95 9   9 9  3 9 " 5  7 "  table 1. mrf5s21090 test circuit component designations and values part description value, p/n or dwg manufacturer c1 9.1 pf chip capacitor, b case 100b9r1cp 500x atc c2 8.2 pf chip capacitor, b case 100b8r2cp 500x atc c3 2.0 pf chip capacitor, b case 100b2r0bp 500x atc c4, c12 0.1 f chip capacitors, b case cdr33bx104akws kemet c5 5.6 pf chip capacitor, b case 100b5r6cp 500x atc c6 5.1 pf chip capacitor, b case 100b5r1cp 500x atc c7 7.5 pf chip capacitor, b case 100b7r5jp 500x atc c8 1.2 pf chip capacitor, b case 100b1r2bp 500x atc c9, c10 0.56 f chip capacitors, b case 700a561mp 150x atc c11 1000 pf chip capacitor, b case 100b102jp 500x atc c13 470 f, 35 v electrolytic capacitor 95f4579 newark c14, c15 0.4 ? 2.5 variable capacitors, gigatrim 44f3367 newark r1 1 k  chip resistor d5534m07b1k00r newark r2 560 k  chip resistor cr1206 564jt newark r3, r4 12  chip resistors rm73b2b120jt garrett electronics w1 wire strap f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 5?392 motorola wireless rf product device data figure 2. mrf5s21090 test circuit component layout 9 3 3 9 95 9 9 9 96 97 98 9" 9 9 95 9 9 mrf5s21090 rev 5 35     3  cut out area f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?393 mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 motorola wireless rf product device data typical characteristics   6 5" 5  8 6 5 5 5 57 " figure 3. 2?carrier w?cdma broadband performance figure 4. two?tone power gain versus output power figure 5. 3rd order intermodulation distortion versus output power figure 6. intermodulation distortion products versus tone spacing figure 7. pulse cw output power versus input power ""  6  """
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mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 5?394 motorola wireless rf product device data typical characteristics figure 8. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power figure 9. 2-carrier w-cdma spectrum " """" "" "  mb1b 3  0: figure 10. ccdf w?cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal 3: :1@ah "  " "" """  7 " " 8 "" 1 e  e/)91) 1$ 3 1/3  9 figure 11. mtbf factor versus junction temperature $1:4a4 913a/3#*,*  0,% &,,* * *22 % *=*.%*0 *
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5?395 mrf5s21090l mrf5s21090lr3 mrf5s21090lsr3 motorola wireless rf product device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2100 2120 2160 2.4 ? j2.0 2.1 ? j1.9 2.2 ? j2.1 3.4 ? j5.1 3.2 ? j5.4 3.0 ? j4.4    7 0&    7 "
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mrf21090 mrf21090s 5?396 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applications. ? typical w?cdma performance for 2140 mhz, 28 volts 4.096 mhz bw @ 5 mhz offset, 1 perch 15 dtch: output power ? 11.5 watts efficiency ? 16% gain ? 12.2 db acpr ? ?45 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2110 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 270 1.54 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model mrf21090 mrf21090s 2 (minimum) 1 (minimum) machine model mrf21090 mrf21090s m3 (minimum) m4 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.65 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 90 w, 28 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s mrf21090s case 465b?03, style 1 ni?880 mrf21090 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?397 mrf21090 mrf21090s motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s gate threshold voltage (v ds = 10 v, i d = 300 a) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 v, i d = 750 ma) v gs(q) 3 3.8 5 vdc drain?source on?voltage (v gs = 10 v, i d = 1 a) v ds(on) ? 0.1 0.6 vdc dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 4.2 ? pf functional tests (in motorola test fixture) common?source amplifier power gain (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 10 11.7 ? db drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) 30 33 ? % intermodulation distortion (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) imd ? ?30 ?27.5 dbc input return loss (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) irl ? ?12 ?9.0 db common?source amplifier power gain (v dd = 28 vdc, p out = 75 w cw, i dq = 750 ma, f = 2170 mhz) g ps ? 11.7 ? db drain efficiency (v dd = 28 vdc, p out = 75 w cw, i dq = 750 ma, f = 2170 mhz) ? 41 ? % output mismatch stress (v dd = 28 vdc, p out = 90 w cw, i dq = 750 ma, f = 2110 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21090 mrf21090s 5?398 motorola wireless rf product device data figure 1. mrf21090 test circuit schematic b1 ferrite bead, fair rite #2743019447 c1, c13 470 f, 50 v electrolytic capacitors c2, c10 22 f, 35 v tantalum surface mount chip capacitors, kemet c3, c9 20 nf chip capacitors, atc #100b203mca500x c4, c8 5.1 pf chip capacitors, atc #100b5r1cca500x c5, c12 0.4 ? 2.5 pf variable capacitors, johanson gigatrim c6 10 pf chip capacitor, atc #100b100jca500x c7 1  f, 35 v tantalum surface mount chip capacitor, kemet c11 1 nf chip capacitor, atc #100b102jca500x c14 8.2 pf chip capacitor, atc #100b8r2cca500x r1 13 ? , 1/4 w chip resistor, garret instrument #rm73b2b130jt, r2 12 ? , 1/4 w chip resistor, garret instrument #rm73b2b120jt z1 30.7 x 2.09 mm microstrip z2 5.99 x 2.09 mm microstrip z3 7.55 x 9.89 mm microstrip z4 3.77 x 15.71 mm microstrip z5 6.89 x 26.17 mm microstrip z6 14.93 x 32.05 mm microstrip   34a) /1 34a/1 /1 3   5    6 7 8 "  96 97 98 9" 9 9 9 95 9 3 : /1 9 9 9 95 9   z7 10.23 x 2.09 mm microstrip z8 6.03 x 2.09 mm microstrip z9 23.98 x 2.09 mm microstrip z10 29.82 x 1.15 mm microstrip z11 17.08 x 1.15 mm microstrip ws1, ws2 beryllium copper wear blocks 5 mils thick brass banana jack and nut red banana jack and nut green banana jack and nut type n jack connectors, 3052?1648?10, omni specra 4?40 head screws 0.125 long 4?40 head screws 0.188 long 4?40 head screws 0.312 long 4?40 head screws 0.438 long endplates brass endplates for copper bedstead bedstead copper bedstead/heatsink insert copper bedstead insert raw pcb 0.030 glass teflon ? , 2 oz copper clad 3 x 5 arion rf circuit 3 x 5 copper clad pcb teflon ? , mrf21090, cmr ; ; ; ;; figure 2. mrf21090 test circuit component layout 9 / 1  / 1 ,% aaa4**0 9 9 95 9 9 9 96 97 98 9" 9 9 9 : 3 3 95 :%2 %* aaa4**0 :%2 mrf21090 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?399 mrf21090 mrf21090s motorola wireless rf product device data typical performance (in motorola test fixture)   /1 /1 3  11<   43/)9@ $! " " figure 3. class ab broadband circuit performance "7" " figure 4. cdma acpr, power gain and drain efficiency versus output power " " 5" "  " 5" "    7 0&   8"        6 "
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mrf21090 mrf21090s 5?400 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z in ? z ol * ? 2110 2140 2170 3.03 + j3.40 2.60 + j3.50 3.02 + j3.46 0.92 + j1.67 0.97 + j1.80 0.90 + j1.52 z in = complex conjugate of the source impedance. z ol * = complex conjugate of the optimum load impedance at a given power, voltage, imd, bias current and frequency.    7     6 "
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5?401 mrf21120 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfet designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? w?cdma performance @ ?45 dbc, 5 mhz offset, 15 dtch, 1 perch output power ? 14 watts (avg.) power gain ? 11.5 db efficiency ? 16% ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2170 mhz, 120 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 389 2.22 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.45 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 120 w, 28 v lateral n?channel rf power mosfet case 375d?04, style 1 ni?1230 rev 8 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21120 5?402 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain?source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc ) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics (1) forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.8 ? s gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2.5 3 3.8 vdc gate quiescent voltage (v ds = 28 v, i d = 500 ma) v gs(q) 3 3.9 5 vdc drain?source on?voltage (v gs = 10 v, i d = 2 a) v ds(on) ? 0.38 0.5 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 2.8 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) common?source amplifier power gain (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 10.5 11.4 ? db drain efficiency (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) 30 34.5 ? % intermodulation distortion (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) imd ? ?31 ?28 db input return loss (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) irl ? ?12 ?9 db common?source amplifier power gain (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) g ps ? 11.5 ? db common?source amplifier power gain (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) g ps ? 11.5 ? db drain efficiency (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) ? 34.5 ? % intermodulation distortion (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) imd ? ?31 ? db input return loss (v dd = 28 vdc, p out = 120 w pep, i dq = 2  500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) irl ? ?12 ? db power output, 1 db compression point (v dd = 28 vdc, cw, i dq = 2  500 ma, f1 = 2170.0 mhz) p1db ? 120 ? watts (1) each side of device measured separately. (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?403 mrf21120 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) (continued) common?source amplifier power gain (v dd = 28 vdc, p out = 120 w cw, i dq = 2  500 ma, f1 = 2170.0 mhz) g ps ? 10.5 ? db drain efficiency (v dd = 28 vdc, p out = 120 w cw, i dq = 2  500 ma, f1 = 2170.0 mhz) ? 42 ? % output mismatch stress (v dd = 28 vdc, p out = 120 w cw, i dq = 2  500 ma, f = 2.17 ghz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (2) device measured in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21120 5?404 motorola wireless rf product device data figure 1. 2.1 ? 2.2 ghz broadband test circuit schematic   98 96 : 9 9 ;   955 ; 95 35 95 95 ;  "   7 " /1 9  34 ) /1 95 9 p 34 /1 /1  98 7 5" 5 96 5  97 9 p   9 9 95 9 ; 9 p5 9   9 9 9" ; 95 9 ; 9 p b1, b2 ferrite beads, fair rite c1, c2, c12 0.6 ? 4.5 pf variable capacitors, johanson gigatrim c3, c4, c9, c10 10 pf chip capacitors, b case, atc c5 0.4 ? 2.5 pf variable capacitor, johanson gigatrim c6, c7 2.0 pf chip capacitors, b case, atc c8 0.5 pf chip capacitor, b case, atc c11 0.2 pf chip capacitor, b case, atc c13, c20, c29, c37 5.1 pf chip capacitors, b case, atc c14, c21, c28, c38 91 pf chip capacitors, b case, atc c15, c22, c27, c34, c36, c42 22 f, 35 v tantalum surface mount chip capacitors, kemet c16, c23, c33, c43 0.039 f chip capacitors, b case, atc c17, c24, c32, c41 1000 pf chip capacitors, b case, atc c19, c25 0.022 f chip capacitors, b case, atc c30, c39 1.0 f, 35 v tantalum surface mount chip capacitors, kemet c31, c40 100 f, 50 v electrolytic capacitors, sprague c35, c44 470 f, 63 v electrolytic capacitors, sprague coax1, coax2 25 ? semi rigid coax, 70 mil od, 1.05 long coax3, coax4 50 ? semi rigid coax, 85 mil od, 1.05 long l1, l5 5.0 nh minispring inductors, coilcraft l2 8.0 nh minispring inductor, coilcraft l3, l4 7.15 nh microspring inductors, coilcraft r1, r2 1 k ? , 1/4 w fixed metal film resistors, dale r3, r4 270 ? , 1/8 w fixed film chip resistors, dale r5, r6 1.2 k ? , 1/8 w fixed film chip resistors, dale z1 0.150 x 0.080 microstrip z2 0.320 x 0.080 microstrip z4, z5 1.050 x 0.080 microstrip z6, z7 0.120 x 0.080 microstrip z8, z9 0.140 x 0.080 microstrip z10, z11 0.610 x 0.080 microstrip z12, z13 0.135 x 0.080 microstrip z14, z15 0.130 x 0.080 microstrip z16, z17 0.300 x 0.350 microstrip z18, z19 0.150 x 0.500 microstrip z20, z21 0.075 x 0.500 microstrip z22, z23 0.330 x 0.500 microstrip z24, z25 0.100 x 0.550 microstrip z26, z27 0.175 x 0.550 microstrip z28, z29 0.045 x 0.550 microstrip z30, z31 0.190 x 0.325 microstrip z32, z33 0.080 x 0.325 microstrip z34, z35 0.515 x 0.080 microstrip z36, z37 0.020 x 0.080 microstrip z38, z39 0.565 x 0.080 microstrip z40 0.100 x 0.080 microstrip z41 0.470 x 0.080 microstrip z42 0.100 x 0.080 microstrip board material 0.03 teflon ? , r = 2.55 copper clad, 2 oz. cu connectors n?type panel mount, stripline 95 9 3  7 9        5  8  5 9 8 6 6 3 9" 9 : 3 95 96 98 97 95" 5 9 57 58  6 9" 8 5 5 56  55 95 956 957 958    9 " ; ; 5 3 3 9 ; ; ; ; ; ; ; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?405 mrf21120 motorola wireless rf product device data figure 2. 2.1 ? 2.2 ghz broadband test circuit component layout  3 98 : 35 3 9 9 3  95 9 3 3 : 9   9 95 9 9 9" 96 9 9 9 95 95" 98 96 5  97 9 956 958 957 95 9" 9 9   9 95 98 9" 9 9 9  96 95 955     95 95 95  5 m 8  5 m 8  5 m 8  5 m 8  5 m 8 " "m "  5 m 8 97 " "m " f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21120 5?406 motorola wireless rf product device data typical characteristics figure 3. power gain versus output power   /1 /1 3  11<  8 " figure 4. intermodulation distortion versus output power   /1 /1 3  11<  " "" "" 5 figure 5. class ab broadband circuit performance 5  43/)9@ $! figure 6. 2.17 ghz w?cdma mask at 14 watts (avg.), 5 mhz offset, 15 dtch, 1 perch 9**, 6 ! figure 7. power gain, efficiency, acpr versus output power (w?cdma)   /1 /1 3  11<  " ""    6  "  "" " 7 "  ""  $a)13$/ 1)a<131)a0:& b" b" b " b5" b" b5 " b b5" "  5  8 7" " "  #2 b"" b" b5" b7" b" b" b" " figure 8. power gain, efficiency, imd versus output power   /1 /1 3  11<  "  5 6 "" " 8  a 3a )a0:  #2 7""
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5?407 mrf21120 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 3.7 ? j2.0 3.1 ? j2.5 3.5 ? j2.4 4.9 ? j2.8 5.1 ? j2.7 5.2 ? j2.5    7       ""
   "     6" $!   " ?  2 ,&*  = %0   6" $! z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ;   " $!   " $! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21125 mrf21125s mrf21125sr3 5?408 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 1600 ma, f1 = 2.1125 ghz, f2 = 2.1225 ghz, channel bandwidth = 3.84 mhz, adjacent channels at 5 mhz , acpr and im3 measured in 3.84 mhz bandwidth. peak/avg = 8.5 db @ 0.01% probability on ccdf. output power ? 20 watts efficiency ? 18% gain ? 13 db im3 ? ?43 dbc acpr ? ?45 dbc ? 100% tested under 2?carrier w?cdma ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, 2170 mhz, 125 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 330 1.89 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.53 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 125 w, 28 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s mrf21125s case 465b?03, style 1 ni?880 mrf21125 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?409 mrf21125 mrf21125s mrf21125sr3 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 10.8 ? s gate threshold voltage (v ds = 10 v, i d = 300 a) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 v, i d = 1300 ma) v gs(q) 2.5 3.9 4.5 vdc drain?source on?voltage (v gs = 10 v, i d = 1 a) v ds(on) ? 0.12 ? vdc dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 5.4 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma, 3.84 mhz channel bandwidth, im3 measured in 3.84 mhz bandwidth. peak/avg = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 20 w avg, 2?carrier w?cdma, i dq = 1600 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12 13 ? db drain efficiency (v dd = 28 vdc, p out = 20 w avg, 2?carrier w?cdma, i dq = 1600 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 17 18 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 20 w avg, 2?carrier w?cdma, i dq = 1600 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured at f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? ?43 ?40 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 20 w avg, 2?carrier w?cdma, i dq = 1600 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured at f1 ?5 mhz and f2 +5 mhz referenced to carrier channel power.) acpr ? ?45 ?40 dbc input return loss (v dd = 28 vdc, p out = 20 w avg, 2?carrier w?cdma, i dq = 1600 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9.0 db output mismatch stress (v dd = 28 vdc, p out = 125 w cw, i dq = 1600 ma, f = 2170 mhz, vswr = 5:1, all phase angles at frequency of test) no degradation in output power before and after test (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21125 mrf21125s mrf21125sr3 5?410 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic unit max typ min symbol typical two?tone performance (in motorola test fixture) common?source amplifier power gain (v dd = 28 vdc, p out = 125 w pep, i dq = 1600 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps ? 12 ? db drain efficiency (v dd = 28 vdc, p out = 125 w pep, i dq = 1600 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) ? 34 ? % intermodulation distortion (v dd = 28 vdc, p out = 125 w pep, i dq = 1600 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) imd ? ?30 ? dbc typical cw performance common?source amplifier power gain (v dd = 28 vdc, p out = 125 w cw, i dq = 1600 ma, f1 = 2170.0 mhz) g ps ? 11.5 ? db drain efficiency (v dd = 28 vdc, p out = 125 w cw, i dq = 1600 ma, f = 2170.0 mhz) ? 46 ? % f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?411 mrf21125 mrf21125s mrf21125sr3 motorola wireless rf product device data figure 1. mrf21125 test circuit schematic 34 ) /1 34 /1 /1     9 ; 5  /1   ; 5  8 " 7 9 9 9 97 98 9" 9 9 9 96 ; ; 9 95   9 3  95 9 3 3 z8 0.600 x 1.056 microstrip z9 0.179 x 0.219 microstrip z10 0.100 x 0.336 microstrip z11 0.534 x 0.142 microstrip z12 0.089 x 0.080 microstrip z13 0.620 x 0.080 microstrip pcb arlon gx0300?55?22, 0.030 , r = 2.55 z1 1.212 x 0.082 microstrip z2 0.236 x 0.082 microstrip z3 0.086 x 0.254 microstrip z4 0.357 x 0.082 microstrip z5 0.274 x 1.030 microstrip z6 0.466 x 0.050 microstrip z7 0.501 x 0.050 microstrip  6 ; 35 : ; table 1. mrf21125 test circuit component designations and values designators description b1 ferrite bead (square), fair rite #2743019447 c1 9.1 pf chip capacitor, b case, atc #100b9r1cca500x c2, c4, c11, c12 22 f, 35 v tantalum surface mount chip capacitors, kemet #t491x226k035as4394 c3, c7 20000 pf chip capacitors, b case, atc #100b203jca50x c5, c14 5.1 pf chip capacitors, b case, atc #100b5r1cca500x c6 100000 pf chip capacitor, b case, atc #100b104jca50x c8 10000 pf chip capacitor, b case, atc #100b103jca50x c9 7.5 pf chip capacitor, b case, atc #100b7r5cca500x c10 1.2 pf chip capacitor, b case, atc #100b1r2cca500x c13 0.1 f chip capacitor, kemet #cdr33bx104akws c15 16 pf chip capacitor, b case, atc #100b160kp500x c16 0.6 ? 4.5 pf variable capacitor, johanson gigatrim #27271sl r1 1.0 k ? , 1/8 w chip resistor r2 560 k ? , 1/8 w chip resistor r3 4.7 ? , 1/8 w chip resistor r4 12 ? , 1/8 w chip resistor w1 solid copper buss wire, 16 awg f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21125 mrf21125s mrf21125sr3 5?412 motorola wireless rf product device data figure 2. mrf21125 test circuit component layout 9 3 3 95 : 35 9 $34 aa3*.a 9 9 9 9 96 3 97 95  9 98 9" 9     9 9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?413 mrf21125 mrf21125s mrf21125sr3 motorola wireless rf product device data typical characteristics figure 3. 2?carrier (10 mhz spacing) w?cdma spectrum  43/)9@ $! b" b" b6" figure 4. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power figure 5. cw performance   ) /1 3  11< " figure 6. broadband linearity performance  43/)9@ $! figure 7. intermodulation distortion versus output power   /1 /1 3  11<  "" " "7" b b b"  5  b7" b" " b  "  b" "" b " 6 7  " " "  " b5 0: figure 8. power gain versus output power   /1 /1 3  11<      " 5      7 0&    ""
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mrf21125 mrf21125s mrf21125sr3 5?414 motorola wireless rf product device data figure 9. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 3.81 ? j6.86 4.84 ? j8.46 4.33 ? j7.90 1.56 ? j1.58 1.53 ? j1.90 1.48 ? j2.26    7     ""
   "   .( b9%,,*, b9$   " ? 6" $!   " $! 6" $!   " $!  2 ,&*  = %0 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?415 mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications at frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 1200 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 28 watts avg. power gain ? 13.5 db efficiency ? 26% im3 ? ?37 dbc acpr ? ?39 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 92 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 315 2 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c cw operation cw 92 watts thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 92 w cw case temperature 80 c, 28 w cw r jc 0.54 0.56 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 28 w avg., 2 x w?cdma, 28 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s mrf5s21130s case 465b?03, style 1 ni?880 mrf5s21130 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 5?416 motorola wireless rf product device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m4 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2.5 2.7 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1200 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.5 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.6 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12 13.5 ? db drain efficiency (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 24 26 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ?37 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 ?5 mhz and f2 +5 mhz.) acpr ? ?39 ?37 dbc input return loss (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?417 mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 motorola wireless rf product device data 3  i%2 6 34 ) /1 8 9 ; 9" 9 ; 95 ;  2##=g 34 /1 /1 /1 9 95 3 98 9 9" 9  " 97 96   5       5  7 96 97 98 9 ; 9 ; 9 9 ; 9 ; figure 1. mrf5s21130 test circuit schematic z9, z10 0.709 x 0.083 microstrip z11 0.415 x 1.000 microstrip z12 0.531 x 0.083 microstrip z13 0.994 x 0.083 microstrip z14, z15 0.070 x 0.220 microstrip z16 0.430 x 0.083 microstrip pcb taconic tlx8, 0.030 , r = 2.55 z1 0.500 x 0.083 microstrip z2 0.995 x 0.083 microstrip z3 0.905 x 0.083 microstrip z4 0.159 x 1.024 microstrip z5 0.117 x 1.024 microstrip z6, z7 0.749 x 0.083 microstrip z8 0.117 x 1.000 microstrip table 1. mrf5s21130 test circuit component designations and values part description value, p/n or dwg manufacturer c1, c2, c13, c14, c15, c16 10 f, 35 v tantalum capacitors 293d1106x9035d vishay?sprague c3, c4, c11, c12 220 nf chip capacitors (1812) 1812y224kxa vishay?vitramon c5, c6, c7, c9, c10, c18, c19 6.8 pf 100b chip capacitors 100b6r8cw atc c8 0.1 pf 100b chip capacitor 100b0r1bw atc c17 0.5 pf 100b chip capacitor 100b0r5bw atc c20 220 f, 63 v electrolytic capacitor, radial 13668221 philips r1, r2 1 k  , 1/4 w chip resistors f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 5?418 motorola wireless rf product device data figure 2. mrf5s21130 test circuit component layout mrf5s21130 9 3 3 96 97 95 9 9 9 98 9 95 9 9" 9 9 9 96 98 97 9" 9 cut out area rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?419 mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 motorola wireless rf product device data typical characteristics " "" 3  #2 9 3 $5  43/)9@ $! figure 3. 2?carrier w?cdma broadband performance $5a0:& 9 3a0:&  #2 aa 3a )a0: a3 ) b5" b" b b" b ) /1a31/3)a< b9%,,*, b9$  " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' *%-l .(  7 0: o ""h , i%i=g 994 "" 7" " " " "" "7"   5   " 8 7 6 b 5 5"  " b7 b5 b5 b" 449)9@ah """       ""
""
  /1 /1 3  11<  figure 4. two?tone power gain versus output power  #2 aa 3a )a0:    7 0&   5 $!    $! 1+ b1 * $*%2,*
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" ""   5 5    """ b b    /1 /1 3  11<  figure 5. third order intermodulation distortion versus output power $5a13a33 )13$/ 1)a<131)a0:& "" " b5" b5 b" b b " b b" """
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67  &%=   ) /1 3 0:
 figure 7. pulse cw output power versus input power  a/1 /1a 3a0:
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=2*0 9 2*&  
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*2 9**, 4,*f*&g  " $! 5,0 ,0*, ' ,0*, 6' ,0*, f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 5?420 motorola wireless rf product device data typical characteristics "  " " b b" b b" b  " 5 b b"  #2 9 3   /1 /1 3  11<  b9$  figure 8. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power $5a0:& 9 3a0:& a3 )a449)9@aha  #2 a 3a )a0: "  "  5" 5 "  5" b  b5" " b5  b" " b b " $5 figure 9. 2-carrier w-cdma spectrum  43/)9@ $! b" b" b6" b" b7" b" b " 0: b8" b"" b" b5" 57 $! 9'%*= : b$5 o 57 $! : ;$5 o 57 $! : b 9 3 o 57 $! : ; 9 3 o 57 $! : " """" "" "  mb1b 3  0: figure 10. ccdf w?cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal 3: :1@ah "  " "" """ 7    7 0&    ""
   5 $!    $!  ? b9$  " $! o 57 $! :%0+0' *%-l .(  7 0: o ""h , i%i=g 994 " " 8 "" 1 e  e/)91) 1$ 3 1/3  9 figure 11. mtbf factor versus junction temperature $1:4a4 913a/3#*,*  0,% &,,* * *22 % *=*.%*0 *
#*,%,*2 '%.* & ,,*=%*0  i**, '% "h  '* '* ,*&%= #,*0&   ,
*%= %=,* .0* $1:4 %& , ig     , $1:4  % #%,&=%, %##=&%  " 7 " 6 "  " " " 7" "" f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?421 mrf5s21130 mrf5s21130r3 mrf5s21130s mrf5s21130sr3 motorola wireless rf product device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2080 2110 2140 1.51 ? j2.97 1.59 ? j2.68 1.52 ? j2.54 2.87 ? j9.49 3.13 ? j9.86 4.05 ? j10.90    7 0&    ""
   7  .(    ?  = %0    "7" $!   "" $!  2 ,&*   "7" $!   "" $! 2170 2200 1.54 ? j3.13 1.62 ? j2.70 4.80 ? j11.75 5.55 ? j11.87 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 5?422 motorola wireless rf product device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 1300 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 33 watts avg. power gain ? 12.5 db efficiency ? 25% im3 ? ?37 dbc acpr ? ?39 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 125 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 367 2.1 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c cw operation cw 125 watts thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 125 w cw case temperature 80 c, 33 w cw r jc 0.47 0.53 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 33 w avg., 2 x w?cdma, 28 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s mrf5s21150s case 465b?03, style 1 ni?880 mrf5s21150 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?423 mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 motorola wireless rf product device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 360 adc) v gs(th) 2.5 ? 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1300 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 3.6 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 3.6 adc) g fs ? 9 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 3.2 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 11 12.5 ? db drain efficiency (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ?37 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 ?5 mhz and f2 +5 mhz.) acpr ? ?39 ?37 dbc input return loss (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 5?424 motorola wireless rf product device data figure 1. mrf5s21150 test circuit schematic 9 9 3  i%2  2##=g 9" 9 9 9" 9 95 96 98 9 97 95 9 34 /1 /1 34 ) /1 3 96 9 9 9 97 98   5   7  6 8 "   5    6 ; ;; ; ;; z10, z11 0.709 x 0.083 microstrip z12 0.415 x 1.100 microstrip z13 0.874 x 0.083 microstrip z14 1.182 x 0.083 microstrip z15, z16 0.070 x 0.220 microstrip z17 0.430 x 0.083 microstrip pcb taconic tlx8, 0.030 , r = 2.55 z1 0.500 x 0.083 microstrip z2 0.505 x 0.083 microstrip z3 0.536 x 0.083 microstrip z4 0.776 x 0.083 microstrip z5 0.119 x 1.024 microstrip z6, z7 0.749 x 0.083 microstrip z8 0.117 x 1.024 microstrip z9 0.117 x 1.100 microstrip /1 table 1. mrf5s21150 test circuit component designations and values part description value, p/n or dwg manufacturer c1 22 f, 35 v tantalum capacitor taje226m035r avx c2, c6, c8, c9, c13, c18, c19 6.8 pf 100b chip capacitors 100b6r8cw atc c3,c4 1.8 pf 100b chip capacitors 100b1r8bw atc c5, c7, c10, c14 220 nf chip capacitors (1812) 1812y224kxa vishay?vitramon c11, c12, c15, c16 10 f, 35 v tantalum capacitors 293d1106x9035d vishay?sprague c17 0.3 pf chip capacitor 100b0r3bw atc c20 470 f, 63 v electrolytic capacitor, radial 13661471 philips r1, r2 10 k  , 1/4 w chip resistors f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?425 mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 motorola wireless rf product device data figure 2. mrf5s21150 test circuit component layout mrf5s21150 9 3 3 9 95 9 9 9 96 97 98 9" 9 9 95 9 9 9 96 97 98 9" rev 0 cut out area f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 5?426 motorola wireless rf product device data typical characteristics " "" 3  #2 9 3 $5  43/)9@ $! figure 3. 2?carrier w?cdma broadband performance $5a0:& 9 3a0:&  #2 aa 3a )a0: a3 ) b5" b" b b" b ) /1a31/3)a< b9%,,*, b9$  " $! 9%,,*, <#%&( 57 $! 9'%*= :%0+0' *%-l .(  7 0: o ""h , i%i=g 994 "" 7" " " " "" "7" 5   " 8 7 6  b 5 5"  " b7 b5 b5 b" figure 4. two?tone power gain versus output power figure 5. third order intermodulation distortion versus output power figure 6. intermodulation distortion products versus tone spacing figure 7. pulse cw output power versus input power 449)9@ah "" "      8""
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86  6  5 8 5   5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?427 mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 motorola wireless rf product device data typical characteristics figure 8. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power figure 9. 2-carrier w-cdma spectrum " """" "" "  mb1b 3  0: figure 10. ccdf w?cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal 3: :1@ah "  " "" """  7 " " 8 "" 1 e  e/)91) 1$ 3 1/3  9 figure 11. mtbf factor versus junction temperature $1:4a4 913a/3#*,*  0,% &,,* * *22 % *=*.%*0 *
#*,%,*2 '%.* & ,,*=%*0  i**, '% "h  '* '* ,*&%= #,*0&   ,
*%= %=,* .0* $1:4 %& , ig     , $1:4  % #%,&=%, %##=&%  " 7 " 6 "  " " " 7" ""  43/)9@ $! b" b" b6" b" b7" b" b " 0: b8" b"" b" b5" 57 $! 9'%*= : b$5 o 57 $! : ;$5 o 57 $! : b 9 3 o 57 $! : ; 9 3 o 57 $! : "  " " b b" b b" b  " b   /1 /1 3  11<  b9$  $5a0:& 9 3a0:& a3 )a449)9@aha  #2 a 3a )a0:  5" b  b5" " b5  b" b "  " ""  #2 9 3 $5 b "    7 0&    5""
   5 $!    $!  ? b9$  " $! o 57 $! :%0+0' *%-l .(  7 0: o ""h , i%i=g 994 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5s21150 mrf5s21150r3 mrf5s21150s mrf5s21150sr3 5?428 motorola wireless rf product device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2080 2110 2140 1.02 ? j2.94 1.16 ? j2.46 1.09 ? j2.51 3.05 ? j9.66 3.97 ? j10.31 4.70 ? j11.03    7 0&    5""
   55  .(    ?  = %0    "7" $!   "" $!  2 ,&*   "7" $!   "" $! 2170 2200 1.02 ? j2.55 1.16 ? j2.58 5.45 ? j12.41 6.18 ? j13.04 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?429 mrf5p21180 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfet designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 2 x 800 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 + 5 mhz. distortion products measured over a 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz, each carrier peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 38 watts avg. power gain ? 14 db efficiency ? 25.5% im3 ? 37.5 dbc acpr ? ?41 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 180 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 437.5 2.5 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 180 w cw case temperature 80 c, 38 w cw r jc 0.40 0.40 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 38 w avg., 2 x w?cdma, 28 v lateral n?channel rf power mosfet case 375d?04, style 1 ni?1230 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5p21180 5?430 motorola wireless rf product device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 800 madc) v gs(q) ? 3.6 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.7 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ? ?37.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz.) acpr ? ?41 ?38 dbc input return loss (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?14 ?9 db (1) each side of device measured separately. part is internally matched both on input and output. (2) measurements made with device in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?431 mrf5p21180 motorola wireless rf product device data figure 1. mrf5p21180 test circuit schematic z1, z22 1.000 x 0.066 microstrip z2, z21 0.760 x 0.113 microstrip z3, z20 0.068 x 0.066 microstrip z4, z19 1.672 x 0.066 microstrip z5, z6 0.318 x 0.066 microstrip z7, z8 0.284 x 0.180 microstrip 3 3 95 ; 95 9 9    34 ) /1 9 5  6 8 9   7 "  35 9 ; 9 9 9 3   3   97 ; 98 98 ; 9" 9 ; 97 ;   96 ; 9" 9 ; 9 9 ; 96 ;   9 5 6 8 95  7 "   34 /1 /1 /1 z9, z10 0.256 x 0.650 microstrip z11, z12 1.030 x 0.035 microstrip z13, z14 0.500 x 0.650 microstrip z15, z16 0.550 x 0.058 microstrip z17, z18 0.353 x 0.066 microstrip pcb taconic rf?35, 0.030 , r = 3.5   table 1. mrf5p21180 test circuit component designations and values part description value, p/n or dwg manufacturer c1, c2, c3, c4 30 pf chip capacitors 100b300jca500x atc c5, c6, c7, c8 5.6 pf chip capacitors 100b5r6jca500x atc c9, c10 10 f tantalum capacitors t495x106k035as4394 kemet c11, c12 1000 pf chip capacitors 100b102jca500x atc c13, c14, c15, c16 0.1 f chip capacitors cdr33bx104akws kemet c17, c18, c19, c20, c21, c22 22 f tantalum capacitors t491x226k035as4394 kemet c23, c24 1.0 f tantalum capacitors t491c105m050 kemet r1, r2, r3, r4 10  , 1/8 w chip resistors r5 1.0 k  , 1/8 w chip resistor wb1, wb2, wb3, wb4 wear blocks 5 x 180 x 500 mil brass shim motorola f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf5p21180 5?432 motorola wireless rf product device data figure 2. mrf5p21180 test circuit component layout 9 3 3 9 95 9 9 9 96 97 98 9" 9 9 95 9 9 9 96 97 98 9" cut out area 9 9 9 95 35 3 3     : :5 : : mrf5p21180 rev 5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?433 mrf5p21180 motorola wireless rf product device data typical characteristics ""  "7" b " 3  #2 9 3 $5  43/)9@ $! figure 3. 2?carrier w?cdma broadband performance  #2 aa 3a )a0:    7 0&   57   .(    ""
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  /1 /1 3  11<  figure 5. third order intermodulation distortion versus output power $5a13a33 )13$/ 1)a<131)a0:&    7 0&   5 $!    $! 1+ b1 * $*%2,*
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 figure 7. pulse cw output power versus input power  a/1 /1a 3a0:
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mrf5p21180 5?434 motorola wireless rf product device data " "  b b  #2 9 3 $5   /1 /1 3  11< b9$ figure 8. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power a3 )a449)9@aha  #2 a 3a )a0: $5a0:&a 9 3a0:&    7 0&    ""
  5 $!    $!  ? b9$  " $! o 57 $! :%0+0' *%-l .(  7 0: o ""h , i%i=g 994 5 b" 5" b  b5" " b5  b" " b b "  7 " 5" " figure 9. 2-carrier w-cdma spectrum  43/)9@ $! b" b" b6" b" b7" b" b " 0: b8" b"" b" b5" 57 $! 9'%*= : b$5 o 57 $! : ;$5 o 57 $! : b 9 3 o 57 $! : ; 9 3 o 57 $! : "  " " b b" b b" b  " """" "" "  mb1b 3  0: figure 10. ccdf w?cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal 3: :1@ah "  " "" """  7 1 e  e/)91) 1$ 3 1/3  9 figure 11. mtbf factor versus junction temperature 1'2 %i .* (,%#' 02#=%g2 &%=&=%*0 $1:4  ' ,2 ? %
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#*,%,*2 '%.* & ,,*=%*0  i**, '% "h  '* '* ,*&%= #,*0&   ,
*%= %=,* .0* $1:4 %& , ig     , $1:4  % #%,&=%, %##=&%  " "" " " " 7" "" " 6 " " " 8 " 7 $1:4a4 913a/3 5?435 mrf5p21180 motorola wireless rf product device data    ?  = %0    6" $!   " $!  2 ,&*   6" $!   " $! figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 5.39 ? j13.89 5.53 ? j14.51 5.66 ? j13.99 3.69 ? j10.51 3.81 ? j10.66 3.79 ? j11.05 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.    7      ? 7""
   57  .( # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21180 mrf21180s 5?436 motorola wireless rf product device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn?pcs/cellular radio and wll applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 2 x 850 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 + 5 mhz. distortion products measured over a 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz, each carrier peak/avg. = 8.3 db @ 0.01% probability on ccdf. output power ? 38 watts (avg.) power gain ? 12.1 db efficiency ? 22% im3 ? 37.5 dbc acpr ? ?41 dbc ? internally input and output matched, for ease of use ? high gain, high efficiency, and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, 2110 mhz, 170 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 380 2.17 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.46 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. semiconductor technical data 2170 mhz, 170 w, 28 v lateral n?channel rf power mosfets case 375d?04, style 1 ni?1230 mrf21180 case 375e?03, style 1 ni?1230s mrf21180s rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?437 mrf21180 mrf21180s motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain?source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 850 madc) v gs(q) 3 3.9 5 vdc drain?source on?voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.18 0.22 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 6 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 3.6 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers. each carrier has peak/avg. ratio = 8.3 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 11 12.1 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 19 22 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz) im3 ? ?37.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz.) acpr ? ?41 ?39 dbc input return loss (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9 db output mismatch stress (v dd = 28 vdc, p out = 170 w cw, i dq = 2 x 850 ma, f = 2170 mhz vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) each side of device measured separately. part is internally matched both on input and output. (2) measurements made with device in push?pull configuration. (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21180 mrf21180s 5?438 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) (continued) two?tone common?source amplifier power gain (v dd = 28 vdc, p out = 170 w, i dq = 2 x 850 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps ? 12 ? db two?tone drain efficiency (v dd = 28 vdc, p out = 170 w, i dq = 2 x 850 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) ? 33 ? % two?tone intermodulation distortion (v dd = 28 vdc, p out = 170 w, i dq = 2 x 850 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) imd ? ?30 ? dbc two?tone input return loss (v dd = 28 vdc, p out = 170 w, i dq = 2 x 850 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) irl ? ?12 ? db p out , 1 db compression point (v dd = 28 vdc, i dq = 2 x 850 ma, f = 2170 mhz) p1db ? 180 ? w (2) measurements made with device in push?pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?439 mrf21180 mrf21180s motorola wireless rf product device data figure 1. mrf21180 test circuit schematic 34 ) /1 34 /1 /1 8   3 3 : 35 9 9 9 95 ; 9 9 6  5 7     "   3 : 3 9 9 9 9 ; /1   9 6   5 " 8 98 97 97 9 98 ; 9 ; ; 95 7      9" 96 96 95 9" ; 9 ; ; table 1. mrf21180 test circuit component designations and values part description value, p/n or dwg manufacturer b1, b2 short ferrite beads 2743019447 fair rite c1, c2, c3, c4 30 pf chip capacitors 100b300jca500x atc c5, c6, c7, c8 5.6 pf chip capacitors 100b5r6jca500x atc c9, c10 10 f tantalum capacitors t495x106k035as4394 kemet c11, c12, c13, c14 1000 pf chip capacitors 100b102jca500x atc c15, c16, c17, c18 0.1 f chip capacitors cdr33bx104akws kemet c19, c20 1.0 f tantalum capacitors t491c105m050 kemet c21, c22, c23, c24 22 f tantalum capacitors t491x226k035as4394 kemet n1, n2 type n flange mounts 3052-1648-10 omni spectra r1, r2, r3, r4 10 ? , 1/8 w chip resistors r5 1.0 k ? , 1/8 w chip resistor z1, z20 microstrip 0.790 x 0.065 z2, z19 microstrip 0.830 x 0.112 z3, z18 microstrip 0.145 x 0.065 z4, z17 microstrip 1.700 x 0.065 z5, z6 microstrip 0.340 x 0.065 z7, z8 microstrip 0.455 x 0.600 z9, z10 microstrip 0.980 x 0.035 z11, z12 microstrip 0.510 x 0.645 z13, z14 microstrip 0.770 x 0.058 z15, z16 microstrip 0.280 x 0.065 wb1, wb2, wb3, wb4 wear blocks board 0.030 glass teflon ? rf-35, r = 3.50 taconic pcb etched circuit boards mrf21180 rev. 4 cmr f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21180 mrf21180s 5?440 motorola wireless rf product device data figure 2. mrf21180 test circuit component layout mrf21180 rev. 4 9 : :5 95 9 9 3 3 3 : 9 97 9 9 98 : : 97 9 9" 9 3 35 9 9 : 9" 9 9 9 96 95 95 96 98 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?441 mrf21180 mrf21180s motorola wireless rf product device data typical characteristics figure 3. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power   /1 /1 3  11<  figure 4. intermodulation distortion products versus output power a3 )a449)9@aha  #2 a 3a )a0: $5a0:& 9 3a0:&  43/)9@ $! ) /1a31/3)a<   5 $!    $! 57 $! 9'%*= :%0+0' *%-l .(  75 0: o ""h , i%i=g 994  b5 " b"  b " b " b " " b b "  5,0 ,0*,    7 0&    6""
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f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrf21180 mrf21180s 5?442 motorola wireless rf product device data typical characteristics " b6" " b" b" b" b5" b" b " b"  " " b b" b   /1 /1 3  11<   #2 aa 3a )a0: figure 9. two-tone power gain versus output power figure 10. two-tone broadband performance  #2 aa 3a )a0: a3 )a449)9@ah )13$/ 1)a<131)a0:& $  43/)9@ $! ) /1a31/3)a< 6""
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  " $! b  l   " $! ;  l b5" b5 b" b b " "  ' ,0*, 6' ,0*, f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?443 mrf21180 mrf21180s motorola wireless rf product device data figure 13. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 2.65 + j1.52 2.64 + j2.04 2.71 + j1.80 2.45 + j2.08 2.39 + j2.51 2.16 + j3.14    7 0&     p 7 "
   57  .(   ?  = %0   " $!   6" $!  2 ,&*   " $!   6" $! z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- b b; ; f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
this document contains information on a new product. specifications and information herein are subject to change without notice. mrfg35003m6t1 5?444 motorola wireless rf product device data the rf gaas line rf power field effect transistor designed for 3.5 ghz wll/mmds/bwa or umts applications. character- ized from 0.5 to 5.0 ghz. device is unmatched and is characterized for use in class ab customer premise equipment (cpe) applications. ? typical w?cdma performance: ?42 dbc acpr, 3.55 ghz, 6 volts, i dq = 180 ma output power ? 450 mwatts power gain ? 9 db efficiency ? 24% ? 3 watts p1db @ 3.55 ghz ? excellent phase linearity and group delay characteristics ? high gain, high efficiency and high linearity ? in tape and reel. t1 suffix = 1000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 8 vdc total device dissipation @ t c = 25 c derate above 25 c p d 22.7 (2) 0.15 (2) watts w/ c gate?source voltage v gs ?5 vdc rf input power p in 24 dbm storage temperature range t stg ? 65 to +150 c channel temperature (1) t ch 175 c operating case temperature range t c ? 40 to +85 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 6.6 (2) c/w moisture sensitivity level test methodology rating per jesd 22?a113 msl1 (1) for reliable operation, the operating channel temperature should not exceed 150 c. (2) simulated. semiconductor technical data 3.5 ghz, 3 w, 6 v power fet gaas phemt case 466?02, style 1 pld?1.5 plastic rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?445 mrfg35003m6t1 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit saturated drain current (v ds = 3.5 vdc, v gs = 0 vdc) i dss ? 2.9 ? adc off state leakage current (v gs = ?0.4 vdc, v ds = 0 vdc) i gss ? < 1.0 100 adc off state drain current (v ds = 6 vdc, v gs = ?1.9 vdc) i dso ? 0.02 1.0 madc off state current (v ds = 20 vdc, v gs = ?2.5 vdc) i dsx ? 1.0 15 madc gate?source cut?off voltage (v ds = 3.5 vdc, i ds = 15 ma) v gs(th) ?1.2 ?1.0 ?0.7 vdc quiescent gate voltage (v ds = 6 vdc, i dq = 180 ma) v gs(q) ?1.1 ?0.9 ?0.7 vdc power gain (v dd = 6 vdc, i dq = 180 ma, f = 3.55 ghz) g ps 8 9 ? db output power, 1 db compression point (v dd = 6 vdc, i dq = 180 ma, f = 3.55 ghz) p1db ? 3 ? w drain efficiency (v dd = 6 vdc, i dq = 180 ma, p out = 450 mw, f = 3.55 ghz. tune for maximum p out )  d 22 24 ? % adjacent channel power ratio (v dd = 6 vdc, p out = 450 mw avg., i dq = 180 ma, f = 3.55 ghz, w?cdma, 8.5 p/a @ 0.01% probability, 64 ch, 3.84 mcps) acpr ? ?42 ?38 dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35003m6t1 5?446 motorola wireless rf product device data z8 0.439 x 0.136 microstrip z9 0.062 x 0.280 microstrip z11 0.349 x 0.302 microstrip z12 0.055 x 0.130 microstrip z13 0.044 x 0.502 microstrip pcb rogers 4350, 0.020 , r = 3.50 figure 1. 3.5 ghz test circuit schematic z1, z14 0.044 x 0.125 microstrip z2 0.440 x 0.105 microstrip z3 0.340 x 0.357 microstrip z4 0.380 x 0.426 microstrip z5, z10 0.527 x 0.015 microstrip z6 0.027 x 0.347 microstrip z7 0.538 x 0.115 microstrip 9 34 ) /1 34 /1 /1 3 9" 98 97 96 9 9 9 96 97 98 9" 9 9 95 9 9 9  " 9 9 95 95 9 9 96 97 9 9   5   6 7 8   5    "  < table 1. 3.5 ghz test circuit component designations and values designation description c1 12 pf chip capacitor, b case, atc c2 0.1 pf chip capacitor (0805), avx c3, c4, c14, c15 3.9 pf chip capacitors (0805), avx c5, c16 10 pf chip capacitors, a case, atc c6, c17 100 pf chip capacitors, a case, atc c7, c18 100 pf chip capacitors, b case, atc c8, c19 1000 pf chip capacitors, b case, atc c9, c20 3.9 f chip capacitors, b case, atc c10, c21 0.1 f chip capacitors, b case, atc c11, c22 22 f, 35 v tantalum surface mount capacitor, newark c12, c13, c26, c27 0.3 pf chip capacitors (0805), avx c23, c25, c28 1.0 pf chip capacitors (0805), avx c24 7.5 pf chip capacitor, b case, atc r1 50  chip resistor, newark f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?447 mrfg35003m6t1 motorola wireless rf product device data figure 2. 3.5 ghz test circuit component layout 3*.a mrfg35003m6 3 + + 9 9 97 9 95 9 9 9 96 97 98 9" 9 96 95 9 9 95 9 9 9 9" 98 97 96 9 9 9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35003m6t1 5?448 motorola wireless rf product device data typical characteristics  b" " " b" " 3 9 3   /1 /1 3  11< figure 3. w?cdma acpr and input return loss versus output power 9 3a0:&  <   0&    7"
  5 ! 7 l 5 b9$ <  "787  b57     "775  b56"  ) /1a31/3)a<   5 ! 7 l 5 b9$ <  "787  b57     "775  b56"   5  5" "  " " 8  8" 7 note: all data is referenced to package lead interface. s and l are the impedances presented to the dut. all data is generated from load pull, not from the test circuit shown. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?449 mrfg35003m6t1 motorola wireless rf product device data table 2. class ab common source s?parameters at v ds = 6 vdc, i dq = 180 ma f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 0.5 0.954 ?176.79 3.859 84.89 0.016 9.07 0.847 178.96 0.55 0.953 ?177.98 3.527 83.61 0.016 8.90 0.846 178.38 0.6 0.952 ?179.13 3.250 82.29 0.016 8.49 0.846 177.74 0.65 0.952 179.80 3.019 80.95 0.016 8.44 0.845 177.07 0.7 0.952 178.89 2.818 79.74 0.016 8.51 0.844 176.28 0.75 0.951 177.96 2.643 78.49 0.016 8.53 0.844 175.55 0.8 0.952 177.03 2.491 77.11 0.017 8.75 0.843 174.77 0.85 0.952 176.22 2.354 75.85 0.017 8.61 0.842 173.93 0.9 0.951 175.46 2.234 74.67 0.017 8.62 0.842 173.12 0.95 0.951 174.66 2.124 73.38 0.017 8.56 0.841 172.27 1 0.952 173.92 2.025 72.17 0.017 8.48 0.841 171.37 1.05 0.951 173.18 1.934 70.97 0.017 8.47 0.841 170.50 1.1 0.951 172.40 1.851 69.68 0.017 8.93 0.841 169.75 1.15 0.951 171.63 1.774 68.46 0.017 8.90 0.840 168.89 1.2 0.951 170.90 1.704 67.25 0.018 8.79 0.841 168.10 1.25 0.950 170.06 1.638 65.98 0.018 8.80 0.841 167.34 1.3 0.951 169.23 1.576 64.74 0.018 8.44 0.840 166.61 1.35 0.946 168.58 1.518 63.62 0.018 8.76 0.838 166.13 1.4 0.952 167.47 1.463 62.45 0.018 9.00 0.845 165.24 1.45 0.949 166.77 1.411 61.29 0.018 8.57 0.841 164.98 1.5 0.949 163.72 1.360 60.14 0.018 8.15 0.842 166.78 1.55 0.948 162.94 1.317 59.12 0.018 8.28 0.843 166.27 1.6 0.947 162.21 1.276 58.03 0.018 8.51 0.843 165.71 1.65 0.950 161.60 1.237 56.92 0.018 8.31 0.843 165.16 1.7 0.951 160.97 1.201 55.93 0.018 8.40 0.844 164.60 1.75 0.950 160.44 1.167 54.89 0.018 8.35 0.844 164.10 1.8 0.950 159.95 1.135 53.83 0.019 8.44 0.844 163.47 1.85 0.952 159.46 1.105 52.85 0.019 8.61 0.843 162.87 1.9 0.951 159.01 1.076 51.92 0.019 8.34 0.844 162.37 1.95 0.950 158.58 1.049 50.84 0.019 7.93 0.843 161.77 2 0.952 158.25 1.024 49.95 0.019 8.02 0.843 161.24 2.05 0.951 157.84 1.000 49.06 0.019 7.86 0.844 160.75 2.1 0.951 157.48 0.979 48.17 0.019 7.67 0.845 160.26 2.15 0.952 157.17 0.959 47.22 0.019 7.24 0.843 159.69 2.2 0.952 156.89 0.939 46.34 0.020 6.89 0.843 159.08 2.25 0.952 156.63 0.921 45.44 0.020 6.73 0.844 158.58 2.3 0.952 156.35 0.904 44.48 0.020 6.86 0.843 158.07 2.35 0.953 155.98 0.888 43.57 0.020 6.83 0.842 157.42 2.4 0.951 155.66 0.873 42.68 0.020 6.80 0.842 156.97 2.45 0.952 155.28 0.860 41.72 0.020 6.74 0.842 156.47 2.5 0.952 154.86 0.848 40.82 0.020 6.73 0.840 155.83 2.55 0.950 154.44 0.836 39.90 0.021 6.72 0.841 155.29 2.6 0.949 153.93 0.826 38.89 0.021 6.86 0.840 154.74 2.65 0.950 153.36 0.815 37.85 0.021 6.74 0.838 154.18 2.7 0.949 152.82 0.806 36.81 0.022 6.24 0.838 153.62 2.75 0.946 152.08 0.797 35.75 0.022 5.69 0.839 153.16 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35003m6t1 5?450 motorola wireless rf product device data table 2. class ab common source s?parameters at v ds = 6 vdc, i dq = 180 ma (continued) f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2.8 0.946 151.55 0.787 34.63 0.022 4.64 0.836 152.55 2.85 0.946 150.81 0.778 33.54 0.023 3.61 0.836 152.02 2.9 0.945 150.11 0.770 32.46 0.023 2.16 0.837 151.54 2.95 0.945 149.30 0.762 31.37 0.023 1.54 0.835 150.98 3 0.945 148.44 0.754 30.25 0.023 1.03 0.835 150.40 3.05 0.944 147.58 0.747 29.09 0.023 0.48 0.837 149.89 3.1 0.943 146.55 0.739 27.89 0.023 0.15 0.835 149.35 3.15 0.943 145.54 0.732 26.69 0.023 ?0.33 0.834 148.72 3.2 0.944 144.52 0.725 25.53 0.023 ?0.41 0.836 148.13 3.25 0.941 143.47 0.718 24.33 0.023 ?0.52 0.835 147.62 3.3 0.941 142.43 0.711 23.09 0.023 ?1.22 0.834 147.01 3.35 0.941 141.33 0.704 21.89 0.023 ?1.40 0.834 146.44 3.4 0.940 140.22 0.697 20.67 0.024 ?1.31 0.834 145.89 3.45 0.939 139.25 0.689 19.44 0.024 ?1.58 0.832 145.40 3.5 0.940 138.09 0.682 18.26 0.024 ?1.85 0.833 144.66 3.55 0.940 137.05 0.675 17.08 0.024 ?2.29 0.834 144.11 3.6 0.939 136.07 0.668 15.88 0.025 ?2.75 0.832 143.59 3.65 0.941 135.06 0.661 14.68 0.025 ?3.55 0.831 142.91 3.7 0.939 134.20 0.653 13.50 0.025 ?4.69 0.832 142.34 3.75 0.939 133.35 0.646 12.39 0.025 ?5.45 0.831 141.92 3.8 0.939 132.47 0.639 11.29 0.025 ?6.34 0.830 141.27 3.85 0.940 131.67 0.632 10.20 0.025 ?6.85 0.831 140.64 3.9 0.939 130.89 0.625 9.15 0.025 ?6.90 0.831 140.02 3.95 0.940 130.26 0.619 8.10 0.025 ?6.60 0.830 139.40 4 0.941 129.57 0.613 7.10 0.025 ?6.63 0.830 138.76 4.05 0.941 128.98 0.608 6.11 0.026 ?6.67 0.831 138.17 4.1 0.942 128.44 0.602 5.10 0.026 ?7.00 0.830 137.56 4.15 0.942 128.03 0.598 4.14 0.026 ?7.30 0.828 136.87 4.2 0.941 127.57 0.593 3.17 0.027 ?7.73 0.828 136.20 4.25 0.940 127.14 0.589 2.15 0.027 ?8.12 0.827 135.56 4.3 0.941 126.75 0.585 1.21 0.027 ?8.11 0.826 134.85 4.35 0.941 126.39 0.581 0.25 0.027 ?8.33 0.826 134.13 4.4 0.939 125.97 0.578 ?0.74 0.028 ?8.73 0.825 133.44 4.45 0.939 125.64 0.575 ?1.67 0.028 ?8.92 0.823 132.68 4.5 0.939 125.36 0.573 ?2.59 0.029 ?9.42 0.823 131.92 4.55 0.938 124.98 0.571 ?3.50 0.029 ?9.66 0.823 131.23 4.6 0.938 124.55 0.570 ?4.53 0.030 ?10.28 0.822 130.45 4.65 0.938 124.20 0.571 ?5.52 0.030 ?10.87 0.821 129.60 4.7 0.937 123.76 0.570 ?6.60 0.031 ?11.91 0.821 128.79 4.75 0.935 123.17 0.569 ?7.76 0.031 ?13.22 0.819 127.98 4.8 0.935 122.58 0.569 ?8.89 0.031 ?14.16 0.817 127.09 4.85 0.934 121.93 0.570 ?9.98 0.031 ?14.45 0.817 126.23 4.9 0.932 121.14 0.570 ?11.17 0.032 ?14.82 0.816 125.41 4.95 0.932 120.43 0.571 ?12.37 0.032 ?14.82 0.815 124.46 5 0.929 119.55 0.573 ?13.61 0.032 ?14.83 0.815 123.55 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?451 mrfg35010 motorola wireless rf product device data the rf gaas line rf power field effect transistor designed for wll/mmds or umts driver applications with frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab or class a linear base station applications. ? typical w?cdma performance: ?42 dbc acpr, 3.55 ghz, 12 volts, i dq = 180 ma, 5 mhz offset/3.84 mhz bw, 64 dpch (8.5 db p/a @ 0.01% probability) output power ? 1 watt power gain ? 10 db efficiency ? 30% ? 10 watts p1db @ 3.55 ghz ? excellent phase linearity and group delay characteristics ? high gain, high efficiency and high linearity maximum ratings rating symbol value unit drain?source voltage v dss 15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 28.3 0.19 watts w/ c gate?source voltage v gs ?5 vdc rf input power p in 33 dbm storage temperature range t stg ? 65 to +175 c channel temperature (1) t ch 175 c operating case temperature range t c ? 45 to +90 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case class a class ab r jc 5.3 4.8 c/w (1) for reliable operation, the operating channel temperature should not exceed 150 c. semiconductor technical data 3.5 ghz, 10 w, 12 v power fet gaas phemt case 360d?02, style 1 ni?360hf rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010 5?452 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit saturated drain current (v ds = 3.5 vdc, v gs = 0 vdc) i dss ? 2.9 ? adc off state leakage current (v gs = ?0.4 vdc, v ds = 0 vdc) i gss ? < 1.0 100 adc off state drain current (v ds = 12 vdc, v gs = ?1.9 vdc) i dso ? 0.09 1.0 madc off state current (v ds = 28.5 vdc, v gs = ?2.5 vdc) i dsx ? 5.0 15 madc gate?source cut?off voltage (v ds = 3.5 vdc, i ds = 15 ma) v gs(th) ?1.2 ?0.8 ?0.7 vdc quiescent gate voltage (v ds = 12 vdc, i d = 180 ma) v gs(q) ?1.0 ?0.8 ?0.5 vdc power gain (v dd = 12 vdc, i dq = 180 ma, f = 3.55 ghz) g ps 9.0 10 ? db output power, 1 db compression point (v dd = 12 vdc, i dq = 180 ma, f = 3.55 ghz) p1db ? 10 ? w drain efficiency (v dd = 12 vdc, i dq = 180 ma, p out = 1.0 w avg., f = 3.55 ghz)  d 23 30 ? % adjacent channel power ratio (v dd = 12 vdc, p out = 1.0 w avg., i dq = 180 ma, f = 3.55 ghz, w?cdma, 8.5 p/a @ 0.01% probability, 64 ch, 3.84 mcps) acpr ? ?42 ?40 dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?453 mrfg35010 motorola wireless rf product device data figure 1. 3.4 ? 3.6 ghz single supply bias sequencing test circuit schematic  9 35 3 3 9 36 9" 98 95 9 97 9 9 98 3 3 37 9 1 1 9 1 15  96 9 95 97 9 9 9 / )9 34 ) /1 34 /1 /1   96 38 9"   5  7 6  c1, c21 6.8 pf chip capacitors, a case, atc c2, c20 10 pf chip capacitors, a case, atc c3, c19 100 pf chip capacitors, a case, atc c4, c18 100 pf chip capacitors, b case, atc c5, c10, c16, c17 1000 pf chip capacitors, b case, atc c6, c11, c12, c15 0.1 f chip capacitors, b case, atc c7, c14 39k chip capacitors, b case, atc c8, c13 22 f tantalum chip capacitors c9 6.8 f tantalum chip capacitor d1 5.1 v zener diode, ma8051ct?nd r1 22.1 k ?, 1/4 w 1%, chip resistor r2 5k trim pot, #3224w?1?502e r3 12 k ?, 1/4 w 1%, chip resistor r4 100 k ?, 1/4 w 1%, chip resistor r5 39 k ?, 1/4 w 1%, chip resistor r6 10 ?, 1/4 w 1%, chip resistor r7 2.2 k ?, 1/4 w 1%, chip resistor r8, r9 50 ?, 1/4 w 1%, chip resistors u1 voltage converter, ltc 1261 q1 switch, mtp23p06v pcb rogers ro4350, 0.020 , r = 3.50 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010 5?454 motorola wireless rf product device data figure 2. 3.4 ? 3.6 ghz test circuit component layout 3*.b" mrfg35010      ) cut out area /1 /1 ) /1  9 9 95 9 9 9 96 97 98 9" 9 9  95 9 9 9 96 97 98 9" 9 3 3 35 3 3 3 36 38 37   < / f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?455 mrfg35010 motorola wireless rf product device data typical characteristics note: all data is referenced to package lead interface. s and l are the impedances presented to the dut. all data is generated from load pull, not from the test circuit shown.  8 5 5     " " " " " 7"  #2   /1 /1 3  11< figure 3. power gain and drain efficiency versus output power  #2 aa 3a )a0: a3 )a449)9@ah   6" " " " 5" " "  <   0&    7"
  5 ! 7 0: l 5 b9$ <  "7 6  b     "687  b5"  " b6" " " b6" " 3 9 3   /1 /1 3  11< figure 4. w?cdma acpr and input return loss versus output power 9 3a0:& ) /1a31/3)a<   5 ! 7 0: l 5 b9$ <  "7 6  b     "687  b5"   5 " "   <   0&    7"
  5 ! 7 0: l 5 b9$ <  "7 6  b     "687  b5"    ) /1 3 0:
 figure 5. w?cdma output power and drain efficiency versus input power 5 5  5" 7 5"     " "  "  a/1 /1a 3a0:
 a3 )a449)9@ah   f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010 5?456 motorola wireless rf product device data f mhz z source ? z load ? 3500 3550 3600 4.3 ? j16.3 4.1 ? j15.8 4.2 ? j16.0 5.7 ? j7.0 5.7 ? j6.8 5.7 ? j6.6        7"
     figure 6. series equivalent input and output impedance    ?  = %0    5 "" $!   5"" $!   5 "" $!   5"" $!  2 ,&* z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. # $%&'( )*+ ,- *.&* /0*, 1*2 # $%&'( )*+ ,- f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?457 mrfg35010 motorola wireless rf product device data table 1. class a common source s?parameters at v ds = 12 vdc, i dq = 1000 ma f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 0.50 0.956 ?177.95 5.591 79.60 0.007 15.64 0.741 179.71 0.60 0.957 ?179.86 4.668 76.30 0.007 23.81 0.739 179.15 0.70 0.956 178.44 4.007 73.21 0.008 23.84 0.736 178.75 0.80 0.956 177.05 3.520 70.18 0.008 26.09 0.736 178.29 0.90 0.954 175.83 3.138 67.20 0.009 30.55 0.735 177.85 1.00 0.955 174.61 2.842 64.30 0.010 28.91 0.735 177.42 1.10 0.954 173.42 2.604 61.65 0.009 31.64 0.734 176.95 1.20 0.952 172.29 2.402 58.87 0.011 31.90 0.735 176.52 1.30 0.952 171.25 2.236 56.13 0.011 36.06 0.735 175.97 1.40 0.950 170.02 2.098 53.34 0.011 33.99 0.736 175.52 1.50 0.950 168.36 2.054 50.41 0.011 32.65 0.725 174.86 1.60 0.948 167.24 1.944 47.63 0.012 32.47 0.725 174.31 1.70 0.946 166.01 1.850 44.77 0.013 37.07 0.725 173.70 1.80 0.944 164.67 1.769 42.06 0.014 34.40 0.725 172.90 1.90 0.943 163.59 1.698 39.29 0.015 35.71 0.725 172.32 2.00 0.942 162.31 1.638 36.53 0.015 37.47 0.724 171.58 2.10 0.940 161.09 1.580 33.69 0.016 35.82 0.724 170.75 2.20 0.938 159.66 1.532 30.84 0.017 35.69 0.722 169.89 2.30 0.937 158.30 1.491 28.03 0.017 35.43 0.721 169.04 2.40 0.935 156.86 1.454 25.19 0.019 34.19 0.720 168.15 2.50 0.934 155.35 1.422 22.38 0.020 34.10 0.718 167.32 2.60 0.932 153.83 1.396 19.54 0.021 35.51 0.718 166.38 2.70 0.928 152.26 1.375 16.68 0.022 33.15 0.716 165.61 2.80 0.926 150.58 1.356 13.80 0.023 30.84 0.714 164.67 2.90 0.923 148.97 1.342 10.91 0.025 31.00 0.711 163.77 3.00 0.920 147.18 1.332 7.87 0.027 29.11 0.708 162.89 3.10 0.917 145.27 1.328 4.88 0.028 28.98 0.704 161.96 3.20 0.913 143.23 1.326 1.73 0.030 27.36 0.699 161.08 3.30 0.908 141.12 1.329 ?1.48 0.032 25.93 0.694 160.09 3.40 0.903 138.91 1.335 ?4.80 0.034 24.33 0.687 159.09 3.50 0.897 136.46 1.346 ?8.26 0.036 22.30 0.679 158.02 3.60 0.893 133.77 1.360 ?11.89 0.039 19.80 0.670 156.93 3.70 0.884 130.86 1.375 ?15.61 0.042 17.46 0.659 155.90 3.80 0.875 127.58 1.393 ?19.50 0.045 15.22 0.648 154.96 3.90 0.866 124.06 1.417 ?23.55 0.048 13.31 0.636 154.06 4.00 0.851 120.13 1.443 ?27.75 0.052 10.27 0.626 153.16 4.10 0.833 115.98 1.472 ?32.06 0.056 7.36 0.618 152.14 4.20 0.814 111.48 1.505 ?36.63 0.060 4.18 0.609 151.13 4.30 0.793 106.69 1.541 ?41.44 0.065 1.13 0.602 149.84 4.40 0.771 101.44 1.581 ?46.57 0.071 ?3.19 0.592 148.47 4.50 0.748 95.69 1.622 ?51.82 0.076 ?7.50 0.582 147.06 4.60 0.723 89.38 1.668 ?57.33 0.082 ?11.79 0.575 145.72 4.70 0.697 82.41 1.721 ?63.32 0.089 ?16.57 0.568 144.03 4.80 0.672 74.51 1.771 ?69.70 0.096 ?22.28 0.559 142.02 4.90 0.647 65.82 1.818 ?76.56 0.103 ?28.04 0.549 139.82 5.00 0.622 56.14 1.860 ?83.67 0.110 ?33.91 0.539 137.39 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010 5?458 motorola wireless rf product device data table 2. class ab common source s?parameters at v ds = 12 vdc, i dq = 180 ma f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 0.50 0.936 ?175.05 5.292 80.70 0.014 3.73 0.735 ?178.66 0.60 0.936 ?177.28 4.422 77.20 0.014 3.63 0.735 ?179.61 0.70 0.935 ?179.21 3.803 74.02 0.015 3.78 0.735 179.80 0.80 0.935 179.21 3.341 70.87 0.014 7.22 0.736 179.20 0.90 0.935 177.77 2.983 67.85 0.014 5.83 0.738 178.58 1.00 0.934 176.46 2.701 64.80 0.015 7.03 0.738 178.09 1.10 0.934 175.26 2.473 62.00 0.015 7.15 0.738 177.54 1.20 0.933 174.05 2.284 59.24 0.014 6.85 0.739 177.01 1.30 0.933 172.86 2.124 56.47 0.015 6.90 0.740 176.42 1.40 0.933 171.71 1.991 53.70 0.015 8.93 0.739 175.92 1.50 0.929 170.06 1.948 50.73 0.016 7.81 0.730 175.22 1.60 0.930 168.89 1.845 47.88 0.016 8.58 0.731 174.51 1.70 0.927 167.73 1.757 44.99 0.016 8.16 0.731 173.88 1.80 0.926 166.37 1.678 42.32 0.016 10.00 0.730 173.09 1.90 0.925 165.33 1.610 39.48 0.017 9.25 0.732 172.45 2.00 0.923 164.05 1.551 36.70 0.018 11.89 0.731 171.71 2.10 0.921 162.82 1.498 33.90 0.018 10.06 0.731 170.85 2.20 0.920 161.49 1.451 31.07 0.018 10.11 0.730 170.01 2.30 0.918 160.17 1.411 28.22 0.019 10.86 0.729 169.14 2.40 0.916 158.74 1.376 25.43 0.020 9.05 0.728 168.25 2.50 0.916 157.35 1.347 22.58 0.020 8.57 0.727 167.43 2.60 0.913 155.97 1.321 19.80 0.021 9.64 0.727 166.51 2.70 0.912 154.45 1.300 16.98 0.022 10.23 0.725 165.61 2.80 0.909 152.83 1.280 14.05 0.023 9.68 0.723 164.76 2.90 0.907 151.25 1.268 11.14 0.024 10.24 0.719 163.70 3.00 0.904 149.54 1.257 8.18 0.026 7.35 0.717 162.83 3.10 0.901 147.76 1.253 5.20 0.026 9.11 0.714 161.86 3.20 0.896 145.88 1.253 2.11 0.028 6.33 0.709 160.85 3.30 0.893 143.83 1.255 ?1.10 0.030 7.09 0.704 159.82 3.40 0.887 141.78 1.260 ?4.43 0.031 5.16 0.697 158.76 3.50 0.882 139.43 1.268 ?7.81 0.033 4.74 0.690 157.60 3.60 0.876 136.99 1.281 ?11.29 0.035 4.34 0.682 156.46 3.70 0.870 134.24 1.295 ?14.96 0.038 1.64 0.672 155.26 3.80 0.863 131.29 1.311 ?18.72 0.040 0.43 0.660 154.16 3.90 0.853 127.96 1.334 ?22.68 0.042 ?2.33 0.650 153.12 4.00 0.840 124.33 1.354 ?26.85 0.046 ?4.01 0.639 152.16 4.10 0.825 120.40 1.386 ?31.01 0.049 ?6.67 0.632 150.97 4.20 0.807 116.26 1.414 ?35.40 0.053 ?9.06 0.624 149.72 4.30 0.787 111.78 1.453 ?40.01 0.057 ?11.29 0.617 148.33 4.40 0.767 106.97 1.492 ?44.83 0.061 ?14.79 0.608 146.78 4.50 0.745 101.74 1.537 ?49.99 0.066 ?18.66 0.599 145.00 4.60 0.721 95.90 1.579 ?55.50 0.071 ?22.20 0.589 143.33 4.70 0.697 89.39 1.633 ?61.25 0.077 ?26.02 0.580 141.41 4.80 0.674 82.09 1.685 ?67.46 0.084 ?30.63 0.569 139.21 4.90 0.647 73.93 1.740 ?74.01 0.090 ?35.78 0.557 136.94 5.00 0.622 64.84 1.790 ?81.02 0.097 ?41.70 0.545 134.20 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
this document contains information on a new product. specifications and information herein are subject to change without notice. 5?459 mrfg35010mt1 motorola wireless rf product device data the rf gaas line rf power field effect transistor designed fo r wll/mmds/bwa or umts driver applications with frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab linear base station applications. ? typical w?cdma performance: ?42 dbc acpr, 3.55 ghz, 12 volts, i dq = 180 ma, 5 mhz offset/3.84 mhz bw, 64 dpch (8.5 db p/a @ 0.01% probability) output power ? 900 mw power gain ? 10 db efficiency ? 28% ? 9 watts p1db @ 3.55 ghz ? excellent phase linearity and group delay characteristics ? high gain, high efficiency and high linearity ? in tape and reel. t1 suffix = 1000 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 22.7 (2) 0.15 (2) watts w/ c gate?source voltage v gs ?5 vdc rf input power p in 33 dbm storage temperature range t stg ? 65 to +150 c channel temperature (1) t ch 175 c operating case temperature range t c ? 40 to +85 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 6.6 (2) c/w moisture sensitivity level test methodology rating per jesd 22?a113 msl1 (1) for reliable operation, the operating channel temperature should not exceed 150 c. (2) simulated. semiconductor technical data 3.5 ghz, 9 w, 12 v power fet gaas phemt case 466?02, style 1 pld?1.5 plastic rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010mt1 5?460 motorola wireless rf product device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit saturated drain current (v ds = 3.5 vdc, v gs = 0 vdc) i dss ? 2.9 ? adc off state leakage current (v gs = ?0.4 vdc, v ds = 0 vdc) i gss ? < 1.0 100 adc off state drain current (v ds = 12 vdc, v gs = ?1.9 vdc) i dso ? 0.1 1.0 madc off state current (v ds = 28.5 vdc, v gs = ?2.5 vdc) i dsx ? 2.0 15 madc gate?source cut?off voltage (v ds = 3.5 vdc, i ds = 15 ma) v gs(th) ?1.2 ?1.0 ?0.7 vdc quiescent gate voltage (v ds = 12 vdc, i dq = 180 ma) v gs(q) ?1.2 ?0.95 ?0.7 vdc power gain (v dd = 12 vdc, i dq = 180 ma, f = 3.55 ghz) g ps 9.0 10 ? db output power, 1 db compression point (v dd = 12 vdc, i dq = 180 ma, f = 3.55 ghz) p1db ? 9 ? w drain efficiency (v dd = 12 vdc, i dq = 180 ma, p out = 900 mw avg., f = 3.55 ghz)  d 23 28 ? % adjacent channel power ratio (v dd = 12 vdc, p out = 900 mw avg., i dq = 180 ma, f = 3.55 ghz, w?cdma, 8.5 p/a @ 0.01% probability, 64 ch, 3.84 mcps) acpr ? ?43 ?40 dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?461 mrfg35010mt1 motorola wireless rf product device data z8 0.439 x 0.136 microstrip z9 0.150 x 0.280 microstrip z11 0.349 x 0.302 microstrip z12 0.055 x 0.130 microstrip z13 0.044 x 0.502 microstrip pcb rogers 4350, 0.020 , r = 3.50 figure 1. 3.5 ghz test circuit schematic z1, z14 0.044 x 0.125 microstrip z2 0.044 x 0.105 microstrip z3 0.340 x 0.357 microstrip z4 0.380 x 0.426 microstrip z5, z10 0.527 x 0.015 microstrip z6 0.027 x 0.347 microstrip z7 0.538 x 0.115 microstrip 9 34 ) /1 34 /1 /1 3 9 9" 98 97 96 9 96 97 98 9" 9 9 95 9 9 9 9  " 95 95 9 9 96 98 95" 95 9 9   5   6 7 8   5    "  < 9 95 table 1. 3.5 ghz test circuit component designations and values designation description c1, c26 7.5 pf chip capacitors, b case, atc c2, c14 0.4 pf chip capacitors (0805), avx c3, c13, c30 0.2 pf chip capacitors (0805), avx c4, c5, c15, c16 3.9 pf chip capacitors, avx c6, c17 10 pf chip capacitors, a case, atc c7, c18 100 pf chip capacitors, a case, atc c8, c19 100 pf chip capacitors, b case, atc c9, c20 1000 pf chip capacitors, b case, atc c10, c21 0.1 f chip capacitors, b case, atc c11, c22 3.9 f chip capacitors, b case, atc c12, c23 22 f, 35 v tantalum surface mount capacitors, newark c25, c27 1.0 pf chip capacitors (0805), avx c29 0.7 pf chip capacitor (0805), avx r1 50  chip resistor, newark f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010mt1 5?462 motorola wireless rf product device data figure 2. 3.5 ghz test circuit component layout 3*.a mrfg35010m 3 + + 9 9 9 95 95 95 9 9 9 96 97 98 9" 9 95 95" 9 98 96 9 9 95 9 9 9" 98 97 96 9 9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?463 mrfg35010mt1 motorola wireless rf product device data typical characteristics   /1 /1 3  11< figure 3. w?cdma acpr and input return loss versus output power " b" " " b" " 3 9 3  <   0&    7"
  5 ! 7 l 5 b9$ <  "787  b5"5     "77  b"6  b" b" b" b" b5" b5" b" b" b " b "  9 3a0:& ) /1a31/3)a<   5 ! 7 l 5 b9$ <  "787  b5"5     "77  b"6    "  " " 5" " "  " note: all data is referenced to package lead interface. s and l are the impedances presented to the dut. all data is generated from load pull, not from the test circuit shown. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mrfg35010mt1 5?464 motorola wireless rf product device data table 2. class ab common source s?parameters at v ds = 12 vdc, i dq = 180 ma f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 0.5 0.946 ?177.11 4.710 82.28 0.016 8.19 0.759 ?179.39 0.55 0.945 ?178.28 4.303 80.79 0.016 7.57 0.758 ?179.99 0.6 0.944 ?179.44 3.963 79.23 0.016 7.60 0.758 179.39 0.65 0.945 179.50 3.674 77.69 0.016 7.44 0.758 178.74 0.7 0.945 178.60 3.427 76.28 0.016 7.44 0.757 177.98 0.75 0.944 177.66 3.211 74.83 0.016 7.21 0.757 177.28 0.8 0.945 176.74 3.023 73.24 0.017 7.65 0.756 176.57 0.85 0.945 175.95 2.853 71.74 0.017 7.16 0.756 175.75 0.9 0.944 175.17 2.705 70.36 0.017 7.34 0.756 174.99 0.95 0.945 174.36 2.570 68.88 0.017 7.31 0.755 174.18 1 0.945 173.63 2.447 67.47 0.017 7.08 0.755 173.33 1.05 0.944 172.90 2.337 66.06 0.017 7.29 0.756 172.51 1.1 0.944 172.09 2.234 64.52 0.017 7.56 0.756 171.82 1.15 0.944 171.29 2.139 63.11 0.017 7.46 0.756 171.01 1.2 0.944 170.57 2.052 61.73 0.017 7.43 0.757 170.22 1.25 0.943 169.71 1.971 60.26 0.017 7.47 0.757 169.52 1.3 0.944 168.85 1.894 58.81 0.017 7.28 0.757 168.83 1.35 0.940 168.20 1.823 57.49 0.017 7.56 0.755 168.39 1.4 0.946 167.07 1.754 56.13 0.017 7.92 0.762 167.55 1.45 0.943 166.35 1.691 54.75 0.018 7.59 0.759 167.32 1.5 0.944 163.30 1.626 53.36 0.017 7.06 0.762 169.20 1.55 0.943 162.54 1.573 52.16 0.017 7.24 0.763 168.75 1.6 0.942 161.81 1.523 50.87 0.017 7.48 0.764 168.22 1.65 0.945 161.17 1.474 49.56 0.018 7.46 0.765 167.71 1.7 0.946 160.55 1.429 48.35 0.017 7.46 0.766 167.18 1.75 0.945 160.01 1.387 47.14 0.018 7.84 0.767 166.73 1.8 0.945 159.48 1.348 45.88 0.018 7.89 0.767 166.15 1.85 0.947 159.00 1.310 44.70 0.018 7.97 0.768 165.58 1.9 0.946 158.52 1.274 43.55 0.018 7.87 0.770 165.10 1.95 0.945 158.06 1.240 42.30 0.018 7.89 0.769 164.54 2 0.948 157.71 1.209 41.23 0.018 7.61 0.771 164.05 2.05 0.947 157.30 1.179 40.16 0.018 7.78 0.772 163.59 2.1 0.947 156.92 1.152 39.09 0.018 7.65 0.773 163.12 2.15 0.948 156.58 1.127 37.97 0.018 7.40 0.773 162.56 2.2 0.948 156.32 1.102 36.90 0.019 7.22 0.773 162.01 2.25 0.948 156.04 1.079 35.82 0.019 6.98 0.775 161.53 2.3 0.949 155.73 1.058 34.70 0.019 7.24 0.775 161.05 2.35 0.949 155.33 1.037 33.62 0.019 7.52 0.775 160.43 2.4 0.948 154.99 1.019 32.54 0.019 7.60 0.776 159.99 2.45 0.948 154.57 1.002 31.44 0.019 7.49 0.777 159.53 2.5 0.948 154.13 0.986 30.35 0.019 7.69 0.776 158.91 2.55 0.946 153.68 0.971 29.28 0.019 8.05 0.777 158.40 2.6 0.946 153.15 0.957 28.12 0.020 8.01 0.777 157.88 2.65 0.946 152.54 0.943 26.91 0.020 8.01 0.776 157.34 2.7 0.945 151.98 0.930 25.73 0.020 7.82 0.777 156.80 2.75 0.943 151.22 0.918 24.52 0.021 7.27 0.778 156.36 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?465 mrfg35010mt1 motorola wireless rf product device data table 2. class ab common source s?parameters at v ds = 12 vdc, i dq = 180 ma (continued) f s 11 s 21 s 12 s 22 f ghz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2.8 0.943 150.66 0.906 23.27 0.021 6.42 0.776 155.80 2.85 0.943 149.88 0.894 22.02 0.022 5.21 0.777 155.28 2.9 0.942 149.16 0.883 20.80 0.021 4.17 0.778 154.81 2.95 0.942 148.32 0.872 19.56 0.021 4.03 0.778 154.25 3 0.943 147.41 0.862 18.28 0.021 3.53 0.778 153.67 3.05 0.942 146.51 0.853 16.96 0.022 3.11 0.780 153.18 3.1 0.940 145.45 0.842 15.64 0.022 2.65 0.780 152.64 3.15 0.940 144.41 0.833 14.29 0.022 2.43 0.779 152.04 3.2 0.941 143.33 0.823 13.00 0.022 2.48 0.782 151.43 3.25 0.938 142.25 0.814 11.67 0.022 2.48 0.781 150.92 3.3 0.939 141.15 0.804 10.32 0.022 2.08 0.781 150.33 3.35 0.939 140.02 0.795 8.97 0.022 1.99 0.782 149.74 3.4 0.938 138.89 0.785 7.61 0.022 2.11 0.783 149.19 3.45 0.938 137.88 0.776 6.26 0.023 2.05 0.782 148.72 3.5 0.939 136.68 0.767 4.96 0.023 1.79 0.783 147.97 3.55 0.938 135.63 0.757 3.67 0.023 1.56 0.785 147.40 3.6 0.938 134.63 0.748 2.34 0.024 1.02 0.783 146.88 3.65 0.939 133.60 0.739 1.04 0.024 0.44 0.783 146.20 3.7 0.938 132.68 0.729 ?0.25 0.024 ?0.54 0.785 145.61 3.75 0.937 131.84 0.720 ?1.47 0.024 ?1.30 0.785 145.17 3.8 0.937 130.92 0.711 ?2.69 0.024 ?1.98 0.785 144.52 3.85 0.938 130.07 0.702 ?3.89 0.024 ?2.38 0.786 143.87 3.9 0.938 129.29 0.694 ?5.07 0.024 ?2.22 0.787 143.24 3.95 0.939 128.60 0.686 ?6.23 0.024 ?2.00 0.787 142.61 4 0.939 127.88 0.678 ?7.34 0.025 ?1.80 0.788 141.94 4.05 0.939 127.23 0.671 ?8.46 0.025 ?2.04 0.789 141.34 4.1 0.941 126.66 0.664 ?9.57 0.025 ?2.17 0.789 140.69 4.15 0.941 126.23 0.658 ?10.65 0.025 ?2.15 0.788 140.01 4.2 0.940 125.73 0.651 ?11.72 0.026 ?2.48 0.789 139.31 4.25 0.939 125.28 0.645 ?12.82 0.026 ?2.81 0.789 138.65 4.3 0.940 124.85 0.640 ?13.86 0.026 ?2.79 0.788 137.91 4.35 0.940 124.45 0.635 ?14.92 0.027 ?2.73 0.789 137.16 4.4 0.939 124.01 0.630 ?16.00 0.027 ?3.22 0.789 136.45 4.45 0.939 123.63 0.627 ?17.01 0.028 ?3.26 0.788 135.67 4.5 0.939 123.27 0.623 ?18.03 0.028 ?3.64 0.788 134.88 4.55 0.937 122.84 0.620 ?19.03 0.029 ?3.74 0.789 134.16 4.6 0.937 122.32 0.619 ?20.17 0.029 ?4.57 0.788 133.36 4.65 0.937 121.88 0.618 ?21.26 0.030 ?5.02 0.788 132.50 4.7 0.936 121.36 0.617 ?22.45 0.030 ?6.01 0.788 131.67 4.75 0.935 120.72 0.615 ?23.68 0.031 ?7.22 0.787 130.83 4.8 0.935 120.04 0.614 ?24.90 0.031 ?7.64 0.786 129.91 4.85 0.934 119.35 0.613 ?26.12 0.031 ?8.05 0.786 129.03 4.9 0.932 118.49 0.613 ?27.41 0.031 ?8.39 0.786 128.20 4.95 0.931 117.69 0.614 ?28.72 0.032 ?8.32 0.785 127.24 5 0.929 116.74 0.614 ?30.05 0.033 ?8.48 0.786 126.32 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5?466 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?1 motorola wireless rf product device data motorola rf amplifier ics and modules ? data sheets chapter six page device number number amplifier ics and modules mhl9236 6?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9236m 6?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9318 6?6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl9838 6?9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl18336 6?12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl18926 6?13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl19338 6?14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl19926 6?15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl19936 6?16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhl21336 6?19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhpa19010 6?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhpa21010 6?25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhvic910hr2 6?28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhvic915r2 6?35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mw4ic915mbr1 6?43 . . . . . . . . . . . . . . . . . . . . . . . . . . . . mw4ic915gmbr1 6?43 . . . . . . . . . . . . . . . . . . . . . . . . . . . mwic930r1 6?53 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mwic930gr1 6?53 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . general purpose linear amplifier modules mhw1345 6?61 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?2 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?3 mhl9236 mhl9236m motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the cellular frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as tdma, cdma or qpsk. ? third order intercept: 47 dbm typ ? power gain: 30.5 db typ (@ f = 880 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? for use in tdma, cdma, qpsk or analog systems absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +10 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 26 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 550 620 ma power gain (f = 880 mhz) g p 29.5 30.5 31.5 db gain flatness (f = 800?960 mhz) g f ? 0.1 0.3 db power output @ 1 db comp. (f = 880 mhz) p out 1 db 33.0 34.0 ? dbm input vswr (f = 800?960 mhz) vswr in ? 1.2:1 1.5:1 output vswr (f = 800?960 mhz) vswr out ? 1.2:1 1.5:1 third order intercept (f1 = 879 mhz, f2 = 884 mhz) ito 46.0 47.0 ? dbm noise figure (f = 800?960 mhz) nf ? 3.5 4.5 db 
  semiconductor technical data     800?960 mhz 2.5 w, 30.5 db rf linear ldmos amplifiers case 301ap?02, styles 1, 2 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhl9236 mhl9236m 6?4 motorola wireless rf product device data typical characteristics  
 figure 1. power gain, input return loss, output return loss versus frequency  
   figure 2. p1db, ito versus frequency    
      figure 3. power gain, i dd versus temperature !
 "# figure 4. ito, p1db versus temperature figure 5. phase (1) , group delay (1) versus temperature   "  "$  " " "  "   "  " %  "  "   "     &'!(% ))
 figure 6. gain flatness, phase linearity versus temperature * *  *"   "  &'!
 
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6?5 mhl9236 mhl9236m motorola wireless rf product device data typical characteristics  
 figure 7. power gain, i dd versus voltage , %!'
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mhl9318 6?6 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the cellular frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as tdma and cdma. ? third order intercept: 49 dbm typ ? power gain: 17.5 db typ (@ f = 880 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? for use in tdma and cdma multi?carrier applications absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +20 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 28 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 500 560 ma power gain (f = 880 mhz) g p 17 17.5 18.5 db gain flatness (f = 860?900 mhz) g f ? 0.1 0.2 db power output @ 1 db comp. (f = 880 mhz) p out 1 db ? 35.5 ? dbm input vswr (f = 860?900 mhz) vswr in ? 1.2:1 1.5:1 output vswr (f = 860?900 mhz) vswr out ? 1.2:1 1.5:1 third order intercept (f1 = 879 mhz, f2 = 884 mhz) ito 47 49 ? dbm noise figure (f = 960 mhz) nf ? 3 4.5 db 
  semiconductor technical data   3.0 w, 17.5 db 860?900 mhz rf linear ldmos amplifier case 301as?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?7 mhl9318 motorola wireless rf product device data  
 figure 1. power gain, input return loss, output return loss versus frequency  
   figure 2. p1db, ito versus frequency  $  
 "     figure 3. power gain, i dd versus temperature !
  figure 4. ito, p1db versus temperature figure 5. phase (1) , group delay (1) versus temperature  "# "    " " "  " #  " " " % " # $  " "   "  &'!(% ))
 figure 6. gain flatness, phase linearity versus temperature * *  *"   "  &'!
 
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mhl9318 6?8 motorola wireless rf product device data typical characteristics  
 figure 7. power gain, i dd versus voltage , %!'
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6?9 mhl9838 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the cellular frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as tdma and cdma. ? third order intercept: 50 dbm typ ? power gain: 31 db typ (@ f = 880 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? for use in tdma and cdma multi?carrier applications absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +6 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 28 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 770 800 ma power gain (f = 880 mhz) g p 30 31 32 db gain flatness (f = 800?925 mhz) g f ? 0.1 0.3 db power output @ 1 db comp. (f = 880 mhz) p out 1 db ? 39 ? dbm input vswr (f = 800?925 mhz) vswr in ? 1.2:1 1.5:1 output vswr (f = 800?925 mhz) vswr out ? 1.2:1 1.5:1 third order intercept (f1 = 879 mhz, f2 = 884 mhz) ito 49 50 ? dbm noise figure (f = 925 mhz) nf ? 3.7 4.5 db 
  semiconductor technical data   800?925 mhz 8.0 w, 31 db rf linear ldmos amplifier case 301ap?02, style 1 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhl9838 6?10 motorola wireless rf product device data typical characteristics  
 figure 1. power gain, input return loss, output return loss versus frequency  
   figure 2. p1db, ito versus frequency  $  
      figure 3. power gain, i dd versus temperature !
 " figure 4. ito, p1db versus temperature figure 5. phase (1) , group delay (1) versus temperature   "  "$  " " "  " #  "  " %   "  " "     &'!(% ))
 figure 6. gain flatness, phase linearity versus temperature * *  *"   "  &'!
 
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6?11 mhl9838 motorola wireless rf product device data typical characteristics  
 figure 7. power gain, i dd versus voltage , %!'
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mhl18336 6?12 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the pcs frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as tdma and cdma. ? third order intercept: 46 dbm typ ? power gain: 30 db typ (@ f =1850 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +10 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 26 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 500 525 ma power gain (f =1850 mhz) g p 29 30 31 db gain flatness (f = 1800?1900 mhz) g f ? 0.2 0.4 db power output @ 1 db comp. (f = 1850 mhz) p out 1 db 35 36 ? dbm input vswr (f = 1800?1900 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 = 1847 mhz, f2 = 1852 mhz) ito 45 46 ? dbm noise figure (f = 1850 mhz) nf ? 4.2 4.5 db 
  semiconductor technical data   1800?1900 mhz 4 w, 30 db rf linear ldmos amplifier case 301ap?02, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?13 mhl18926 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm systems operating in the pcs frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as tdma, edge and cdma. ? third order intercept point: 50 dbm typ ? power gain: 28.6 db typ (@ f = 1842 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station application absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +7 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (t c = +25 c; v dd = 26 vdc; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 1.1 1.15 a power gain (f = 1842 mhz) g p 27.6 28.6 29.6 db gain flatness (f = 1805?1880 mhz) g f ? 0.3 0.5 db power output @ 1 db compression (f = 1842 mhz) p1 db 39 40 ? dbm input vswr (f = 1805?1880 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 =1839 mhz, f2=1844 mhz) ito 49.5 50 ? dbm noise figure (f = 1880 mhz) nf ? 4.2 5 db note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. 
  semiconductor technical data   1805?1880 mhz, 10 w, 28.6 db rf linear ldmos amplifier case 301ay?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhl19338 6?14 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the pcs frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as tdma and cdma. ? third order intercept: 46 dbm typ ? power gain: 30 db typ (@ f = 1960 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +10 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 28 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 500 525 ma power gain (f = 1960 mhz) g p 29 30 31 db gain flatness (f = 1900?2000 mhz) g f ? 0.1 0.4 db power output @ 1 db comp. (f = 1950 mhz) p out 1 db 35 36 ? dbm input vswr (f = 1900?2000 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 = 1950 mhz, f2 = 1955 mhz) ito 45 46 ? dbm noise figure (f = 2000 mhz) nf ? 4.2 4.5 db 
  semiconductor technical data   1900?2000 mhz 4.0 w, 30 db rf linear ldmos amplifier case 301ap?02, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?15 mhl19926 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm systems operating in the pcs frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as tdma, edge and cdma. ? third order intercept point: 50 dbm typ ? power gain: 29.4 db typ (@ f = 1960 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station application absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +7 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (t c = +25 c; v dd = 26 vdc; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 1 1.05 a power gain (f = 1960 mhz) g p 28.4 29.4 30.4 db gain flatness (f = 1930?1990 mhz) g f ? 0.3 0.5 db power output @ 1 db compression (f = 1960 mhz) p1 db 39 40 ? dbm input vswr (f = 1930?1990 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 =1957 mhz, f2=1962 mhz) ito 49.5 50 ? dbm noise figure (f = 1990 mhz) nf ? 4.2 5 db note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. 
  semiconductor technical data   1930?1990 mhz, 10 w, 29.4 db rf linear ldmos amplifier case 301ay?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhl19936 6?16 motorola wireless rf product device data the rf line  
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the pcs frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as tdma and cdma. ? third order intercept: 49.5 dbm typ ? power gain: 29 db typ (@ f = 1960 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +10 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 26 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 1.4 1.45 a power gain (f = 1960 mhz) g p 28 29 30 db gain flatness (f = 1900?2000 mhz) g f ? 0.2 0.4 db power output @ 1 db comp. (f = 1950 mhz) p1db 40 41 ? dbm input vswr (f = 1900?2000 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 = 1950 mhz, f2 = 1955 mhz) ito 49 49.5 ? dbm noise figure (f = 2000 mhz) nf ? 4.2 4.5 db 
  semiconductor technical data   1900?2000 mhz 12 w, 29 db rf linear ldmos amplifier case 301ay?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?17 mhl19936 motorola wireless rf product device data typical characteristics , -- . " ,/ . $  "    % ' + % , -- . " ,/   . "    
 figure 11. power gain, input return loss, output return loss versus frequency ' +  &'!(% ))
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mhl19936 6?18 motorola wireless rf product device data . $    . "     ""   , %!'
, %) figure 17. power gain, i dd versus voltage ' + . $    . "    -- ' +  &'!
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6?19 mhl21336 motorola wireless rf product device data the rf line ! 
     designed for ultra?linear amplifier applications in 50 ohm system s operating in the 3g frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital cdma modulation systems. ? third order intercept: 45 dbm typ ? power gain: 31 db typ (@ f = 2140 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +5 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c electrical characteristics (v dd = 26 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 500 525 ma power gain (f = 2140 mhz) g p 30 31 32 db gain flatness (f = 2110?2170 mhz) g f ? 0.15 0.4 db power output @ 1 db comp. (f = 2140 mhz) p out 1 db 34 35 ? dbm input vswr (f = 2110?2170 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 = 2137 mhz, f2 = 2142 mhz) ito 44 45 ? dbm noise figure (f = 2170 mhz) nf ? 4.5 5 db 
  semiconductor technical data 2110?2170 mhz 3.0 w, 31 db rf linear ldmos amplifier case 301ap?02, style 1   rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhl21336 6?20 motorola wireless rf product device data typical characteristics "    % ' +  
 figure 21. power gain, input return loss, output return loss versus frequency ' +  &'!(% ))
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 figure 22. p1db, ito versus frequency  
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 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?21 mhl21336 motorola wireless rf product device data  "" " " " " "# " "$ * * " # ' + , %!'
, %) figure 27. power gain, i dd versus voltage ' +  &'!
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 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhpa19010 6?22 motorola wireless rf product device data the rf line  
     designed for class ab amplifier applications in 50 ohm system s operating in the pcs frequency band. a silicon fet design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteris- tics are ideal for digital modulation systems, such as tdma and cdma. ? typical cdma performance: 1960 mhz, 28 volts is?95 cdma pilot, sync, paging, traffic codes 8 through 13 ? adjacent channel power: ?51 dbc @ 30 dbm, 885 khz channel spacing ? power gain: 24.5 db min (@ f = 1960 mhz) ? excellent phase linearity and group delay characteristics ? 0.2 db typical gain flatness ? ideal for feedforward base station applications maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power (single carrier cw) p in +20 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c quiescent bias current i dq 750 ma electrical characteristics (v dd = 28 vdc, v bias ? 8 v set for supply current of 600 ma, t c = 25 c, 50 ? system) characteristic symbol min typ max unit supply current i dd ? 600 ? ma power gain (f = 1960 mhz) g p 24.5 25 ? db gain flatness (f = 1930?1990 mhz) g f ? 0.2 0.5 db power output @ 1 db comp. (f = 1960 mhz) p1db ? 41.5 ? dbm input vswr (f = 1930?1990 mhz) vswr in ? 1.5:1 2:1 noise figure (f = 1960 mhz) nf ? 8 10 db adjacent channel power rejection @ 30 dbm, 1.23 mhz bw, 885 khz channel spacing acpr ? ?58 ?51 dbc 
  semiconductor technical data "" 1930?1990 mhz 10 w, 24.5 db rf high power ldmos amplifier case 301ap?02, style 3 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?23 mhpa19010 motorola wireless rf product device data typical characteristics $$   $ " " % ' +1 %  
 figure 31. two?tone power gain, input return loss and output return loss versus frequency %( %( % ))
 , -- . " ,/  234 .  &  - .  !  5 206 )+7/809 "# "  "  "  " " "" " " $ $ $ $# $ ' +1  &'!
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 figure 32. 2?carrier cdma power gain and efficiency versus frequency ' +1  &'!
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 figure 33. 2?carrier cdma im3 and acpr versus frequency !!-?!!% &! 
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  figure 34. two?tone cdma imd versus output power  -%! -)  
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  figure 35. third order intermodulation distortion versus output power - - -%! -)  
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 figure 36. cw output power, efficiency and gain versus input power -!
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/ f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhpa19010 6?24 motorola wireless rf product device data        !  234    &
 figure 37. 2?carrier cdma acpr, im3 and efficiency versus output power 
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: , -- . " ,/  - .  !  . $  " . $"*   $    #         # " #   " "   note: v dd (pin 3) should always be applied before v bias (pin 2). f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?25 mhpa21010 motorola wireless rf product device data the rf line # 
     designed for class ab amplifier applications in 50 ohm system s operating in the umts frequency band. a silicon fet design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteris- tics are ideal for digital modulation systems. ? typical w?cdma performance for v dd = 28 volts, v bias = 8 volts, i dq = 550 ma, channel bandwidth = 3.84 mhz, adjacent channels at 5 mhz, acpr measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf, 3gpp test model 1, 64 dtch. ? adjacent channel power: ? 50 dbc @ 30 dbm, 5 mhz channel spacing ? power gain: 23.7 db min (@ f = 2140 mhz) ? excellent phase linearity and group delay characteristics ? 0.2 db typical gain flatness ? ideal for feedforward base station applications maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power (single carrier cw) p in +20 dbm storage temperature range t stg ?40 to +100 c operating case temperature range t c ?20 to +100 c quiescent bias current i dq 750 ma electrical characteristics (v dd = 28 vdc, v bias ? 8 v set for supply current of 550 ma, t c = 25 c, 50 ? system) characteristic symbol min typ max unit supply current i dd ? 550 ? ma power gain (f = 2140 mhz) g p 23.7 25 ? db gain flatness (f = 2110?2170 mhz) g f ? 0.2 0.6 db power output @ 1 db comp. (f = 2140 mhz) p1db ? 41.5 ? dbm input vswr (f = 2110?2170 mhz) vswr in ? 1.5:1 2:1 noise figure (f = 2140 mhz) nf ? ? 10 db adjacent channel power rejection @ 30 dbm avg., 3.84 mhz bw, 5 mhz channel spacing acpr ? ?55 ?50 dbc 
  semiconductor technical data "" 2110?2170 mhz 10 w, 23.7 db rf high power ldmos amplifier case 301ap?02, style 3 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhpa21010 6?26 motorola wireless rf product device data typical characteristics " " " " " % ' +1 %  
 figure 38. two?tone power gain, input return loss and output return loss versus frequency ' +1  &'!
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 figure 39. 2?carrier w?cdma power gain and efficiency versus frequency ' +1  &'!
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 figure 40. 2?carrier w?cdma im3 and acpr versus frequency - - -%! -)  
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 figure 43. cw output power, efficiency and gain versus input power -!
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 , -- . " ,/  - .  ! . "   " " " " "  "" " "     f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?27 mhpa21010 motorola wireless rf product device data      !  234    &
 figure 44. 2?carrier w?cdma acpr, im3 and efficiency versus output power 
/  !
/ -!
: , -- . " ,/  - .  !  . "  " . "         "   " "   note: v dd (pin 3) should always be applied before v bias (pin 2). f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhvic910hr2 6?28 motorola wireless rf product device data the rf line  $ % " $  &
'()( *+    the mhvic910hr2 integrated circuit is designed for gsm base stations, uses motorola?s newest high voltage (26 volts) ldmos ic technology, and contains a three?stage amplifier. target applications include macrocell (driver function) and microcell base stations (final stage). the device is packaged in a pfp?16 power flat pack package which gives excellent thermal performances through a solderable backside contact. ? typical gsm performance @ full frequency band (921 ? 960 mhz), 26 volts output power ? 40 dbm (cw) @ p1db power gain ? 39 db @ p1db efficiency ? 48% @ p1db ? integrated esd protection ? usable frequency range ? 921 to 960 mhz ? available in tape and reel. r2 suffix = 1,500 units per 16 mm, 13 inch reel. maximum ratings rating symbol value unit drain supply voltage v dd 28 vdc gate supply voltage v gs 6 vdc rf input power p in 5 dbm case operating temperature t c ? 30 to + 85 c storage temperature range t stg ? 65 to + 150 c operating channel temperature t ch 150 c esd protection characteristics test conditions class human body model 0 (minimum) machine model m2 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.9 c/w note: mhvic910hr2 moisture sensitivity level (msl) = 3. 
  semiconductor technical data 960 mhz, 10 w, 26 v gsm cellular rf ldmos integrated circuit case 978?03 (pfp?16) ,'"
 16 1 functional block diagram , - , -" pin connections     "    "     # 
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6?29 mhvic910hr2 motorola wireless rf product device data recommended operating ranges parameter symbol value unit drain supply voltage v dd 26 vdc 3rd stage quiescent current i dq3 150 ma 2nd stage quiescent current i dq2 50 ma 1st stage quiescent current i dq1 25 ma electrical characteristics (v dd = 26 v, v gs set for i dq3 = 150 ma, t a = 25 c matched to a 50 ? system, frequency range 921 ? 960 mhz, unless otherwise noted) characteristic symbol min typ max unit frequency range f rf 921 ? 960 mhz output power @ 1 db compression point p @ 1db 39 40 ? dbm power gain @ p1db g @ 1db 38 39 ? db power added efficiency @ 1 db compression point pae @ 1db 43 48 ? % input return loss @ p1db irl @ 1db ? ?15 ?10 db gain flatness @ 40 dbm variation (t c = ?30 to +85 c @ 40 dbm) g f g v ? ? .5 5 ? ? db db load stability (v ds = 24 v to 28 v, p out = p1db down to 0 dbm, all phase angles) vswr 10:1 ? ? ? ruggedness (v ds = 26 v, p out = 42 dbm, load vswr = 10:1, all phase angles) no damage after test f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhvic910hr2 6?30 motorola wireless rf product device data      "       )3; 7/6 2304 =8+ 7+7/842;1 c6 *# + !,b =8+ 7+7/842; !
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6?31 mhvic910hr2 motorola wireless rf product device data $#   $ "   $  # $ $ $ $ $"   .    - .  !   . f"   - .  !   . f"   - . " !   . f"   - .  !   . f   - .  !         # $      - .  ! . $    .   f  f"  $#   $ "   $  # $ $ $ $ $"   .    - .  !   . f"   - .  !   . f"   - . " !   . f   - .  !  "     .    - .  ! "   $  #      "   . f"   - .  !   . f"   - . " !   . f"   - .  !   . f   - .  ! figure 3. power gain versus output power  234    &
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mhvic910hr2 6?32 motorola wireless rf product device data figure 9. input return loss versus frequency p out = 10 w figure 10. input return loss versus frequency p out = p1db figure 11. error vector magnitude versus i dq total figure 12. adjacent channel power ratio versus i dq total figure 13. output power versus supply voltage , , !'-
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6?33 mhvic910hr2 motorola wireless rf product device data figure 15. two?tone broadband performance figure 16. two?tone broadband performance figure 17. two?tone broadband performance figure 18. cw performance @ 880 mhz  
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mhvic910hr2 6?34 motorola wireless rf product device data figure 21. intermodulation distortion versus output power  234    &
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6?35 mhvic915r2 motorola wireless rf product device data the rf line  
    !"# the mhvic915r2 wideband integrated circuit is designed for cdma and gsm/gsm edge applications. it uses motorola?s newest high voltage (26 to 28 volts) ldmos ic technology and integrates a multi?stage structure. its wideband on chip integral matching circuitry makes it usable from 746 to 960 mhz. the linearity performances cover all modulations for cellular applications: gsm, gsm edge, td ma, and cdma. the device is packaged in a pfp?16 flat pack package that provides excellent thermal performance through a solderable backside contact. ? typical cdma performance: 869?894 mhz, 27 volts, i dq1 = 80 ma, i dq2 = 120 ma, 1?carrier n?cdma, is?95 cdma 9?channel forward driver application output power ? 23 dbm power gain ? 31 db adjacent channel power ratio ? ?60 dbc @ 750 khz in a 30 khz bw ?66 dbc @ 1.98 mhz in a 30 khz bw output application output power ? 34 dbm pae = 21% adjacent channel power ratio ? ?50 dbc @ 750 khz in a 30 khz bw ? typical gsm performance: 921?960 mhz, 26 volts output power ? 15 w p1db power gain ? 30 db @ p1db drain efficiency = 56% @ p1db ? on?chip matching (50 ohm input, >9 ohm output) ? integrated temperature compensation capability ? usable for scpa and mcpa architecture ? integrated esd protection ? available in tape and reel. r2 suffix = 1,500 units per 16 mm, 13 inch reel. pin connections              
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  semiconductor technical data %&'(
) case 978?03 pfp?16 plastic cdma, gsm/gsm edge 746?960 mhz, 15 w, 27 v rf ldmos wideband integrated amplifier rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhvic915r2 6?36 motorola wireless rf product device data maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc storage temperature range t stg ?65 to +150 c operating junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case driver application stage 1, 27 vdc, i dq = 80 ma (p out = 0.2 w cw) stage 2, 27 vdc, i dq = 120 ma output application stage 1, 27 vdc, i dq = 80 ma (p out = 2.5 w cw) stage 2, 27 vdc, i dq = 120 ma gsm application stage 1, 26 vdc, i dq = 50 ma (p out = 15 w cw) stage 2, 26 vdc, i dq = 140 ma r jc 5.07 3.73 3.41 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) charge device model c4 (minimum) moisture sensitivity level test methodology rating per jesd 22?a113 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit cdma functional tests (in motorola cdma test fixture, 50 hm system) v ds = 27 v, i dq1 = 80 ma, i dq2 = 120 ma, 880 mhz, 1?carrier n?cdma, is?95 cdma 9?channel forward common?source amplifier power gain (p out = 23 dbm) g ps 29 31 ? db power added efficiency (p out = 34 dbm) ? 21 ? % input return loss (p out = 23 dbm) irl ? ?12 ?9 db adjacent channel power ratio (p out = 23 dbm) @ 750 khz offset in 30 khz bw acpr ? ?60 ?55 dbc adjacent channel power ratio (p out = 34 dbm) @ 750 khz offset in 30 khz bw acpr ? ?50 ? dbc gain flatness @ p out = 23 dbm (865 mhz to 895 mhz) g f ? 0.2 0.4 db (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?37 mhvic915r2 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit performance tests (in motorola test fixture, 50 hm system) v ds = 27 v, i dq1 = 80 ma, i dq2 = 120 ma, 865?895 mhz rating symbol min typ max unit quiescent current accuracy over temperature (?10 to 85 c) at nominal value ? iqt ? 5 ? % gain flatness @ p out = 23 dbm (800 mhz to 960 mhz) g f ? 0.20 ? db deviation from linear phase @ p out = 23 dbm ? ? 0.2 ? group delay @ p out = 23 dbm delay ? 2.2 ? ns insertion phase window @ p out = 23 dbm (part to part) ?? ? 10 ? gsm functional tests (in motorola gsm test fixture, 50 hm system) v ds = 26 v, i dq1 = 50 ma, i dq2 = 140 ma, 921?960 mhz, cw rating symbol min typ max unit output power at 1db compression point p1db ? 15 ? watts common?source amplifier power gain @ p1db gain ? 30 ? db drain efficiency @ p1db ? 56 ? % input return loss @ p1db irl ? ?16 ? db evm @ 5 w ? ? 0.9 ? % third order intermodulation distortion (15 w pep, 2 tone 100 khz spacing) imd3 ? ?30 ? dbc drain efficiency (15 w pep, 2 tone 100 khz spacing) ? 35 ? % f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhvic915r2 6?38 motorola wireless rf product device data  z7 0.0504 x 0.480 microstrip z8 0.0252 x 0.843 microstrip z9 0.0252 x 0.167 microstrip z10 0.040 x 0.850 microstrip z11 0.025 x 0.400 microstrip z12 0.020 x 0.710 microstrip pcb rogers 4350, 0.020 , r = 3.50 figure 1. mhvic915 746?960 mhz test circuit schematic z1 0.0438 x 0.400 50 ? microstrip z2 0.1709 x 0.1004 microstrip (not including ic pad length) z3 0.1222 x 0.1944 microstrip z4 0.0836 x 0.3561 microstrip z5 0.0438 x 0.2725 microstrip z6 0.0504 x 0.3378 microstrip  () *)  !*) +   + +   + + + + + +     ,!-"                            % &#&  % '#  .  +  "  ,!-"     +  "  + table 1. mhvic915 746?960 mhz test circuit component designations and values part description value, p/n or dwg manufacturer c1, c2 4.7 pf high q capacitors (0603) atc600s4r7cw atc c3, c4 47 pf npo capacitors (0805) grm40?001cog470j050bd murata c5, c8, c10, c11 1 f x7r chip capacitors (1214) grm42?2x7r105k050al murata c6 10 f, 50 v electrolytic capacitor ecev1ha100sp panasonic c7, c9, c12 0.01 f x7r chip capacitors (0805) grm40x7r103j050bd murata c13 8.2 pf npo chip capacitor (0805) grm40?001cog8r2c050bd murata r1, r2 1 k  chip resistors (0603) rm73b2at102j koa speer r3, r4 100 k  chip resistors (0603) rm73b2at104j koa speer f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?39 mhvic915r2 motorola wireless rf product device data figure 2. mhvic915 746?960 mhz test circuit component layout 6> mhvic915 , - , -" , !) , !)"   "  "   $  "  , ')" , ')      # f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhvic915r2 6?40 motorola wireless rf product device data typical characteristics (motorola test fixture, 50 ohm system) figure 3. power gain versus output power figure 4. drain efficiency versus output power figure 5. power gain versus frequency figure 6. power added efficiency versus frequency figure 7. error vector magnitude versus output power figure 8. spectral regrowth @ 400 khz versus output power  "  #  
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6?41 mhvic915r2 motorola wireless rf product device data typical characteristics (motorola test fixture, 50 ohm system) * &  " "*  , --  )% , %!'
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mhvic915r2 6?42 motorola wireless rf product device data figure 15. series equivalent input and output impedance f mhz z in ? z load ? 750 765 780 42.11 ? j2.79 40.09 + j0.06 40.86 ? j1.37 8.24 + j5.33 8.31 + j5.56 8.39 + j5.82 , -- . " ,/  - .  !  -" .  !  234 . *" & & z in = device input impedance as measured from rf input to ground. z load = test circuit impedance as measured from drain to ground.     -6>8/6 06; 614 34+34 74/=809 64<2;5 795 810 825 39.77 + j1.52 40.49 + j4.39 39.89 + j3.01 8.50 + j5.95 8.62 + j6.02 8.82 + j6.12 840 855 870 41.48 + j5.70 43.51 + j7.03 42.89 + j6.73 8.94 + j6.19 9.12 + j6.17 9.16 + j6.12 885 900 915 46.81 + j7.87 51.79 + j7.02 49.21 + j7.74 9.33 + j6.09 9.38 + j5.95 9.50 + j5.85 . $  . #  g 2 .  ? g 80 g e27 . $  . #  930 945 960 54.48 + j5.65 59.16 + j0.75 57.05 + j3.61 9.47 + j5.73 9.54 + j5.63 9.42 + j5.45 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?43 mw4ic915mbr1 mw4ic915gmbr1 motorola wireless rf product device data the rf line
 / 0 '()( *+    the mw4ic915mb/gmb wideband integrated circuit is designed for gsm and gsm edge base station applicati ons. it uses motorola?s newest high voltage (26 to 28 volts) ldmos ic technology and integrates a multi?stage structure. its wideband on chip design makes it usable from 750 to 1000 mhz. the linearity performances cover all modulations for cellular applications: gsm, gsm edge, tdma, n?cdma and w?cdma. ? typical gsm/gsm edge performances: 26 volts, i dq1 = 60 ma, i dq2 = 240 ma, 869?894 mhz and 921?960 mhz output power ? 3 watts avg. power gain ? 31 db efficiency ? 19% spectral regrowth @ 400 khz offset = ?65 dbc spectral regrowth @ 600 khz offset = ?83 dbc evm ? 1.5% ? typical performance: 860?960 mhz, 26 volts output power ? 15 watts cw power gain ? 30 db efficiency ? 44% ? on chip matching (50 ohm input, >3 ohm output) ? integrated temperature compensation capability with enable/disable function ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, f = 921 mhz, p out = 15 w cw, i dq1 = 90 ma, i dq2 = 240 ma ? can be bolted or soldered through a hole in the circuit board for maximum thermal performance ? also available in gull wing for surface mount ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. 
  semiconductor technical data gsm/gsm edge, n?cdma, w?cdma 860 ? 960 mhz, 15 w, 26 v rf ldmos wideband integrated power amplifiers case 1329?08 to?272 wide body multi?lead plastic mw4ic915mbr1 /.'1
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 case 1329a?02 to?272 wide body multi?lead gull wing plastic mw4ic915gmbr1 functional block diagram pin connections (top view) '- , -)  80 , ') '-  234 ( , -)" '-  "     #      " , ')" $  '-  6 +6;743;6 2 +60174820 , -)  80 , ')  234 (, -)" , ')"        rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mw4ic915mbr1 mw4ic915gmbr1 6?44 motorola wireless rf product device data maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5. +15 vdc storage temperature range t stg ?65 to +175 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case gsm application stage 1, 26 vdc, i dq = 60 ma (p out = 15 w cw) stage 2, 26 vdc, i dq = 240 ma gsm edge application stage 1, 26 vdc, i dq = 60 ma (p out = 7.5 w cw) stage 2, 26 vdc, i dq = 240 ma cdma application stage 1, 26 vdc, i dq = 60 ma (p out = 3.75 w cw) stage 2, 26 vdc, i dq = 240 ma r jc 1.48 1.59 1.63 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c2 (minimum) moisture sensitivity level test methodology rating per jesd 22?a113 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit two?tone functional tests (in motorola test fixture, 50 ohm system) two?tone common?source amplifier power gain (v ds = 26 vdc, p out = 15 w pep, i dq1 = 90 ma, i dq2 = 240 ma, f1 = 869 mhz, f2 = 869.1 mhz and f1 = 960 mhz and f2 = 960.1 mhz) g ps 29 31 ? db drain efficiency (v ds = 26 vdc, p out = 15 w pep, i dq1 = 90 ma, i dq2 = 240 ma, f1 = 869 mhz, f2 = 869.1 mhz and f1 = 960 mhz and f2 = 960.1 mhz) 29 31 ? % third order intermodulation distortion (v ds = 26 vdc, p out = 15 w pep, i dq1 = 90 ma, i dq2 = 240 ma, f1 = 869 mhz, f2 = 869.1 mhz and f1 = 960 mhz and f2 = 960.1 mhz) imd3 ? ?40 ?29 dbc input return loss (v ds = 26 vdc, p out = 15 w pep, i dq1 = 90 ma, i dq2 = 240 ma, f1 = 869 mhz, f2 = 869.1 mhz and f1 = 960 mhz and f2 = 960.1 mhz) irl ? ?15 ?10 db (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?45 mw4ic915mbr1 mw4ic915gmbr1 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit performance tests (in motorola reference board) v ds = 26 v, i dq1 = 60 ma, i dq2 = 240 ma quiescent current accuracy over temperature (?10 to 85 c) at nominal value ? i qt ? 5 ? % gain flatness in 40 mhz bandwidth @ p out = 3 w cw (characterize from 869?894 mhz and 920?960 mhz) g f ? 0.2 ? db deviation from linear phase in 40 mhz bandwidth @ p out = 3 w cw (characterize from 869?894 mhz and 920?960 mhz) ? 0.6 ? delay @ p out = 3 w cw delay ? 2.5 ? ns insertion phase window @ p out = 3 w cw ? ? 15 ? typical performance gsm/gsm edge (in motorola reference board) v ds = 26 v, i dq1 = 60 ma, i dq2 = 240 ma, 869?894 mhz and 921?960 mhz output power at 1db compression point p1db ? 20 ? watts common?source amplifier power gain (p out = 15 w cw) g ps ? 30 ? db drain efficiency (p out = 15 w cw) ? 44 ? % input return loss (p out = 15 w cw) irl ? ?15 ? db error vector magnitude (p out = 3 w avg. including 0.6% rms source evm) evm ? 1.5 ? % spectral regrowth at 400 khz offset (p out = 3 w avg.) sr1 ? ?65 ? dbc spectral regrowth at 600 khz offset (p out = 3 w avg.) sr2 ? ?83 ? dbc f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mw4ic915mbr1 mw4ic915gmbr1 6?46 motorola wireless rf product device data z6 0.157 x 0.283 microstrip z7 0.429 x 0.283 microstrip z8 0.394 x 0.088 microstrip z9 0.181 x 0.088 microstrip pcb taconic tlx8, 0.030 , r = 2.55 figure 1. two?tone 860?960 mhz test fixture schematic z1 0.086 , 50  microstrip z2 0.133 x 0.236 microstrip z3 0.435 x 0.283 microstrip z4 0.171 x 0.283 microstrip z5 0.429 x 0.283 microstrip  "     #  $  " g   , -) , ') , ')" g" g g g g# g g g$   %    "  f f f    f  f , -)" "  6 +6;743;6 2 +60174820  "     #    "   $          table 1. two?tone 860?960 mhz test fixture component designations and values designators description c1, c6, c9, c14 22  f, 35 v tantalum chip capacitors, avx #taje226m035r c2, c5, c8, c11 1000 pf chip capacitors, b case, atc #100b102jca500x c3, c4, c7, c10, c16 22 pf chip capacitors, b case, atc #100b220jca500x c12, c13 10 pf chip capacitors, b case, atc #100b100jca500x c15 10  f tantalum chip capacitor, kemet #t491x226k035as4394 r1, r2 10 k ? , 1/4 w chip resistor (1206) l1 12.5 nh inductor m1, m2, m3, m4 0.283 , 90  mitered microstrip bends f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?47 mw4ic915mbr1 mw4ic915gmbr1 motorola wireless rf product device data figure 2. two?tone 860?960 mhz test fixture component layout mw4ic915mb rev 0 , -)"   , -) , ') , ')" " "     #  $  %  "     f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mw4ic915mbr1 mw4ic915gmbr1 6?48 motorola wireless rf product device data  "  z5 0.566 x 0.043 microstrip z6 0.165 x 0.043 microstrip z7 0.078 x 0.043 microstrip pcb taconic rf35, 0.02 , r = 3.5 figure 3. 860?960 mhz reference board schematic z1 0.681 x 0.039 , 50  microstrip z2 0.157 x 0.228 microstrip z3 0.468 x 0.157 microstrip z4 0.220 x 0.157 microstrip 1 2 3 4 5 7 8 9 10 11 6 16 15 13 12 14 nc nc nc nc nc nc nc $  # 6 +6;743;6 2 +60174820   " g   , ') g" g g g g#    f , -)  g  "    #  " #       f f table 2. 860?960 mhz reference board component designations and values designators description c1, c15 10 pf chip capacitors (0805), accu?p avx #08051j100gbt c2 5.6 pf chip capacitor (0805), accu?p avx #08051j5r6bbt c3, c4, c9, c11, c13 33 pf chip capacitors (0805), accu?p avx #08051j330gb c5, c10, c12, c14 10 nf chip capacitors (0805), avx #08055c103kat c6, c7, c8 22  f, 35 v tantalum capacitors, avx #taje226m035r c16, c17 100 nf chip capacitors (0805), avx #08055c104kat p1, p2 5 k ? potentiometer cms cermet multi?turn, bourns #3224w r1, r2, r3, r4, r5 0 ? , 1/8 w chip resistors (0805) r6, r7 10 k ? , 1/4 w chip resistors (1206) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?49 mw4ic915mbr1 mw4ic915gmbr1 motorola wireless rf product device data figure 4. 860?960 mhz reference board component layout # "      , -- , '' ' - ' -   "    "   "    #  $  #  mw4ic915mb rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mw4ic915mbr1 mw4ic915gmbr1 6?50 motorola wireless rf product device data typical characteristics (motorola test fixture, 50 ohm system) $      % ' +1 -  
 figure 5. two?tone wideband circuit performance -!
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 %  $ $" $ "    " " " " "  ""  "     #" $    #  % ' +1 -  
 figure 6. two?tone wideband circuit performance -!
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 figure 9. power gain versus frequency ' +1  &'!
 , -- . " ,/  234 .  & &  - .  !  -" . " !   .    "        "   "$ #  $ $ $ $" $ $ $ typical characteristics (motorola reference board) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?51 mw4ic915mbr1 mw4ic915gmbr1 motorola wireless rf product device data typical characteristics (motorola reference board) ? continued  
 figure 10. power gain versus frequency $ "   , -- . " ,/  234 .   - .  !  -" . " !   .    "       "   "$ #  $ $ $ $" $ $ $ ' +1  &'!
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 figure 11. power added efficiency versus frequency ! &!---
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&!) !,'* figure 12. error vector magnitude versus output power , , !'-
:; 1   .    , -- . " ,/  - .  !  -" . " ! -' 23e74820 . $  "       *  "* " *  *    *  234    &
&!) figure 13. spectral regrowth at 400 khz versus output power )!%' &@5
/   .    , -- . " ,/  - .  !  -" . " ! -' 23e74820 . $  "         # #   234    &
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/   .    , -- . " ,/  - .  !  -" . " ! -' 23e74820 . $  "      #" # #  "  #  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mw4ic915mbr1 mw4ic915gmbr1 6?52 motorola wireless rf product device data , -- . " ,  - .  !  -" . " !  234 .  figure 15. series equivalent output impedance g 2 .  ? . $  . $  f mhz z load ? 900 910 920 3.23 ? j4.30 3.24 ? j4.36 3.25 ? j4.42 g e27 h z load = test circuit impedance as measured from drain to ground. 930 940 950 3.25 ? j4.47 3.23 ? j4.52 3.21 ? j4.56 960 970 980 3.16 ? j4.60 3.11 ? j4.65 3.04 ? j4.70     -6>8/6 06; 614 34+34 74/=809 64<2;5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?53 mwic930r1 mwic930gr1 motorola wireless rf product device data the rf line
 '()( *+    the mwic930 wideband integrated circuit is designed for cdma and gsm/gsm edge applications. it uses motorola?s newest high voltage (26 to 28 volts) ldmos ic technology and int egrates a multi?stage structure. its wideband on chip integral matching circuitry makes it usable from 746 to 960 mhz. the linearity performances cover all modulations for cellular applications: gsm, gsm edge, tdma, n?cdma and w?cdma. ? typical cdma performance: 27 volts, i dq1 = 90 ma, i dq2 = 240 ma, 2?carrier n?cdma, is ?95, 869?894 mhz, 1.2288 mhz channel bandwidth, im3 measured in 1.2288 integrated bandwidth, acpr measured in 30 khz integrated bandwidth, 2.5 mhz carrier spacing output power ? 5 watts (avg.) power gain ? 31 db efficiency ? 21% adjacent channel power ? ?52 dbc irl ? ?14 db ? typical performance @ p1db: 921?960 mhz, 26 volts output power ? 30 watts p1db power gain ? 30 db efficiency ? 45% ? on chip matching (50 ohm input, >4 ohm output) ? integrated temperature compensation capability ? integrated esd protection ? usable for scpa and mcpa architecture ? capable of handling 5:1 vswr, @ 26 vdc, f = 921 mhz, p out = 30 w cw, i dq1 = 90 ma, i dq2 = 240 ma ? can be bolted or soldered through a hole in the circuit board for maximum thermal performance ? also available in gull wing for surface mount ? available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. 
  semiconductor technical data n?cdma, w?cdma, gsm/gsm edge, 746 ? 960 mhz, 30 w, 26?28 v rf ldmos integrated power amplifiers case 1329?08 to?272 wide body multi?lead plastic mwic930r1 /'"
 /'"!
 case 1329a?02 to?272 wide body multi?lead gull wing plastic mwic930gr1 functional block diagram pin connections (top view) '- , -)  80 , ') '-  234 ( , -)" '-  "     #      " , ')" $  '-  6 +6;743;6 2 +60174820 , -)  80 , ')  234 (, -)" , ')"        rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mwic930r1 mwic930gr1 6?54 motorola wireless rf product device data maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc storage temperature range t stg ?65 to +175 c operating junction temperature t j 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case gsm application stage 1, 27 vdc, i dq = 90 ma (p out = 30 w cw) stage 2, 27 vdc, i dq = 240 ma gsm edge application stage 1, 27 vdc, i dq = 90 ma (p out = 15 w cw) stage 2, 27 vdc, i dq = 240 ma cdma application stage 1, 27 vdc, i dq = 90 ma (p out = 5 w cw) stage 2, 27 vdc, i dq = 240 ma r jc 1.22 1.39 1.50 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c2 (minimum) moisture sensitivity level test methodology rating per jesd 22?a113 3 electrical characteristics (t c = 25 c, unless otherwise noted) characteristic symbol min typ max unit cdma functional tests (in motorola cdma test fixture, 50 ohm system) 1?carrier n?cdma, 869?894 mhz, is?95 cdma pilot, sync, paging, traffic codes 8 through 13. common?source amplifier power gain (v dd = 27 vdc, p out = 5 w avg., 1?carrier n?cdma, i dq1 = 90 ma, i dq2 = 240 ma, f = 869?894 mhz) g ps 28 31 ? db drain efficiency (v dd = 27 vdc, p out = 5 w avg., 1?carrier n?cdma, i dq1 = 90 ma, i dq2 = 240 ma, f = 869?894 mhz) 18 21 ? % adjacent channel power ratio (v dd = 27 vdc, p out = 5 w avg., 1?carrier n?cdma, i dq1 = 90 ma, i dq2 = 240 ma, f = 869?894 mhz) acpr ? ?52 ?48 dbc input return loss (v dd = 27 vdc, p out = 5 w avg., 1?carrier n?cdma, i dq1 = 90 ma, i dq2 = 240 ma, f = 880 mhz) irl ? ?12 ?9 db (continued) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?55 mwic930r1 mwic930gr1 motorola wireless rf product device data electrical characteristics ? continued (t c = 25 c, unless otherwise noted) characteristic symbol min typ max unit performance tests (in motorola test fixture) v ds = 26 v, i dq1 = 90 ma, i dq2 = 240 ma quiescent current accuracy over temperature (?10 to 85 c) at nominal value ? i qt ? 5 ? % gain flatness in 80 mhz bandwidth @ p out = 5 w cw (characterize from 840?920 mhz) g f ? 0.3 ? db deviation from linear phase in 80 mhz bandwidth @ p out = 5 w cw (characterize from 840?920 mhz) ? 0.6 ? delay @ p out = 5 w cw delay ? 3 ? ns insertion phase window @ p out = 5 w cw ? ? 15 ? gsm/gsm edge functional tests (in motorola gsm test fixture) v ds = 27 v, i dq1 = 90 ma, i dq2 = 240 ma, 921?960 mhz, cw output power at 1db compression point p1db ? 30 ? watts common?source amplifier power gain @ p1db g ps ? 30 ? db drain efficiency @ p1db ? 45 ? % input return loss @ p1db irl ? ?12 ? db third order intermodulation distortion (15 w, 2?tone 100 khz spacing) imd3 ? ?30 ? dbc third order intermodulation distortion (1 w, 2?tone 100 khz tone spacing) imd3 backoff ? ?45 ? dbc gain flatness 921?960 mhz @ p out = 5 w cw g f ? 0.3 ? db deviation from linear phase 921?960 mhz @ p out = 5 w cw ? 0.6 ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mwic930r1 mwic930gr1 6?56 motorola wireless rf product device data z5 0.0438 x 0.2009 microstrip z6 0.0504 x 0.528 microstrip z7 0.0504 x 0.150 microstrip z8 0.0254 x 0.880 microstrip z9 0.0254 x 0.250 microstrip pcb rogers 4350, 0.020 , r = 3.50 figure 1. 746?960 mhz test fixture schematic z1 0.0438 x 0.970 50 ? microstrip (not including lead pad) z2 0.234 x 0.1183 microstrip (including lead pad) z3 0.1575 x 0.0938 microstrip z4 0.08425 x 0.584 microstrip     g , -" g# g   , '     # g" g g g g g$   "  6 +6;743;6 2 +60174820 , '" "     , -  " $  "     #    "   $         table 1. 746?960 mhz test fixture component designations and values part description value, p/n or dwg manufacturer *c1 15 pf high q capacitor atc600s150jw atc *c2 6.8 pf high q capacitor ? gsm fixture 8.2 pf high q capacitor ? cdma fixture atc600s6r8cw atc600s8r2cw atc *c3 5.6 pf high q capacitor atc600s5r6cw atc *c4, c5, c7, c8, c9 47 pf high q capacitors atc600s470jw atc c6, c13, c14, c15 1 f chip capacitors grm42?2x7r105k050al murata c10, c11, c12 10 nf chip capacitors c0603c103j5r kemet r1, r2 1 k  , 1/8 w chip resistors rm73b2at102j koa speer r3, r4 1 m  , 1/4 w chip resistors rm73b2bt105j koa speer * for output matching and bypass purposes, it is strongly recommended to use these exact capacitors. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?57 mwic930r1 mwic930gr1 motorola wireless rf product device data  , -" , -  0+34  34+34 " $    "   , '" "   , '       # figure 2. 746?960 mhz test circuit component layout mwic930 rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mwic930r1 mwic930gr1 6?58 motorola wireless rf product device data typical characteristics   " * #4= ;6;   )!'
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/ "     "    " #$ , -- . "# ,/  - . $ !  -" . " ! .   $=7006e )$ -! "        .    f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?59 mwic930r1 mwic930gr1 motorola wireless rf product device data typical characteristics      234    &
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&  - . $ !  -" . " ! f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mwic930r1 mwic930gr1 6?60 motorola wireless rf product device data figure 11. series equivalent input and output impedance f mhz z in ? z load ? 740 760 780 26.61 ? j3.68 28.22 + j2.21 26.88 ? j0.53 4.28 + j2.99 4.37 + j2.91 4.39 + j2.79 , -- . "# ,/  - . $ !  -" . " !  234 .  & !>9* z in = device input impedance as measured from rf input to ground. z load = test circuit impedance as measured from drain to ground.     -6>8/6 06; 614 34+34 74/=809 64<2;5 800 820 840 30.57 + j4.31 37.83 + j5.30 33.79 + j5.53 4.34 + j2.64 4.21 + j2.54 4.06 + j2.52 860 880 900 41.92 + j3.42 47.77 ? j5.84 45.58 ? j0.40 3.90 + j2.58 3.73 + j2.70 3.59 + j2.93 920 940 960 47.83 ? j12.15 41.58 ? j22.64 45.55 ? j18.05 3.43 + j3.17 3.28 + j3.44 3.13 + j3.75 1 . $  . #  g 2 .  ? g 80 g e27 . $  . #  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
6?61 mhw1345 motorola wireless rf product device data the rf line ! *     *  features ? 34.5 db typical gain @ 100 mhz ? silicon bipolar technology ? class a operation ? typical ito = +44 dbm @ 200 mhz ? unconditionally stable under all load conditions applications ? driver amplifier in 50 ohm systems requiring high linearity ? instrumentation amplifiers ? return path amplifier on catv systems operating in the 10 to 200 mhz frequency range ? possible replacement for ca2830c description ? 24 vdc supply, 10 to 200 mhz, general purpose linear amplifier module maximum ratings rating symbol value unit dc supply voltage v cc 28 vdc rf power input p in +5 dbm operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (t c = 25 c, v cc = 24 v, 50 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 10 ? 200 mhz gain flatness (f = 10?200 mhz) g f ? 0.5 1 db power gain (f = 100 mhz) g p 33.5 34.5 35.5 db noise figure, broadband (f = 200 mhz) nf ? 3.8 4.5 db power output ? 1 db compression (f = 10?200 mhz) p 1db 630 800 ? mw power output ? 1 db compression (f = 10?200 mhz, v cc = 28 v) p 1db 1000 1260 ? mw third order intercept (see figure 2, f 1 = 200 mhz) ito 43 44 ? dbm input/output vswr (f = 10?200 mhz) vswr ? 1.5:1 2:1 ? second harmonic distortion (tone at 100 mw, f 2h = 150 mhz) d so ? ?60 ?50 db peak envelope power (two tone distortion test ? see figure 2) (f = 10?200 mhz @ ?32 db imd) pep 600 800 ? mw supply current i cc 270 310 330 ma 
  semiconductor technical data /.1 10?200 mhz 34.5 db 800 mw general purpose linear amplifier module case 1302?01, style 1 rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1345 6?62 motorola wireless rf product device data biased at 24 volts t = 25 c z o = 50 ? frequency s11 s21 s12 s22 frequency (mhz) mag ang mag ang mag ang mag ang 10 ?19.3 45.5 34.6 ?0.6 ?47.0 2.3 ?14.5 76.8 50 ?15.6 35.0 34.2 ?56.7 ?47.5 ?30.3 ?12.6 45.0 100 ?13.2 34.4 33.9 ?114 ?47.9 ?62.9 ?10.8 10.7 200 ?11.1 30.1 33.5 134 ?48.3 ?128 ?14.9 ?42.6 magnitude in db, phase angle in degrees. table 1. s?parameters figure 12. external connections figure 13. intermodulation test  " "j  "   . b  @ - . " -     - " k @k-     '!  " $ #    *   ,  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?1 motorola wireless rf product device data motorola rf catv distribution amplifier modules ? data sheets chapter seven page device number number mhw1223la 7?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1224la 7?5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1244 7?7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1253la 7?9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1254l 7?11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1254la 7?12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1303la 7?14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1304la 7?16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1353la 7?18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw1354la 7?20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw6342t 7?22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7182b 7?24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7185c 7?26 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7185cl 7?28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7205c 7?30 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7205cl 7?32 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7222b 7?34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7242a 7?36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7272a 7?38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw7292a 7?39 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8182b 7?40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8185 7?42 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page device number number mhw8185l 7?44 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8202b 7?46 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8205 7?48 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8205l 7?50 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8222b 7?52 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8242a 7?54 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw8272a 7?55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9146 7?56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9182b 7?58 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9186 7?59 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9187 7?61 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9188 7?63 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9189 7?65 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9206 7?67 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9227 7?69 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9236 7?71 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9242a 7?73 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9247 7?75 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9267 7?77 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mhw9276 7?79 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmg1001r2 7?81 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mmg2001r2 7?86 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?2 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?3 mhw1223la motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 200 mhz frequency range ? specified for use as a return path amplifier for low?, mid? and high?split 2?way cable tv systems description ? 24 vdc supply, 5 to 200 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 200 mhz power gain (f = 5 mhz) g p 22.1 22.7 23.5 db slope (5?200 mhz) s ? 0.2 ? 0.7 db gain flatness (peak to valley) (5?200 mhz) g f ? ? 0.4 db return loss ? input/output (@ f = 5?150 mhz) (@ f = 150?200 mhz) irl/orl 20 18 ? ? ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?72 ?68 ?65 dbc  semiconductor technical data  case 1302?01, style 1 5?200 mhz, 22.7 db 10?channel catv low current amplifier rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1223la 7?4 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?69 ?63 ?65 ?60 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?78 ?69 ?75 ?66 dbc noise figure (f = 5?200 mhz) nf ? 6.3 7 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?5 mhw1224la motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 65 mhz frequency range ? specified for use as a return path amplifier for low?split 2?way cable tv systems description ? 24 vdc supply, 5 to 65 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 65 mhz power gain (f = 5 mhz) g p 22.1 22.7 23.2 db slope (5?65 mhz) s ? 0.2 ? 0.5 db gain flatness (peak to valley) (5?65 mhz) g f ? ? 0.4 db return loss ? input/output (@ f = 5?65 mhz) irl/orl 20 ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?72 ?68 ?65 dbc  semiconductor technical data  case 1302?01, style 1 5?65 mhz, 22.7 db 10?channel catv low current amplifier rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1224la 7?6 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?69 ?63 ?65 ?60 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?78 ?69 ?75 ?66 dbc noise figure (f = 5?65 mhz) nf ? 6.3 7 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?7 mhw1244 motorola wireless rf product device data the rf line   

features ? specified for 12?, 22? and 26?channel loading ? excellent distortion performance ? superior gain, return loss and dc current stability over temperature ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 200 mhz frequency range ? designed for broadband applications requiring low distortion characteristics ? specified for use as a return path amplifier for low?, mid? and high?split 2?way cable tv systems description ? 24 vdc supply, 5 to 200 mhz, catv reverse amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75  system) characteristic symbol mhw1244 units power gain @ 10 mhz g p 24.0 0.5 db frequency range (response/return loss) (1) bw 5.0?200 mhz cable slope equivalent (5.0?200 mhz) s ?0.2 min/+0.8 max db gain flatness (5.0?200 mhz) g f 0.2 max db input/output return loss (5.0?200 mhz) (1) irl/orl 18.0 min db cross modulation distortion @ +50 dbmv per ch. 12?channel flat (5.0?120 mhz) 22?channel flat (5.0?175 mhz) (2) (3) 26?channel flat (5.0?200 mhz) xmd 12 xmd 22 xmd 26 ?66 typ ?61 max ?61 typ dbc dbc dbc notes: 1. response and return loss characteristics are tested and guaranteed for the full 5.0?200 mhz frequency range. 2. motorola 100% distortion and noise figure testing is performed over the 5.0?175 mhz frequency range. cross modulation and com posite triple beat testing are with 22?channel loading; video carriers used are: t7?t13 7.0?43.0 mhz 7?channels 2?6 55.25?83.25 mhz 5?channels a?7 121.25?175.25 mhz 10?channels 3. video carriers used for 12?channel typical performances are t7?6; for 26?channel typical performance, channels 8, 9, 10 and 1 1 are added to the 22?channel carriers listed above.  semiconductor technical data  5?200 mhz, 24.0 db 26?channel catv high?split reverse amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1244 7?8 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75  system) characteristic symbol mhw1244 units composite triple beat distortion @ +50 dbmv per ch. 22?channel flat (5.0?175 mhz) (2) 26?channel flat (5.0?200 mhz) (3) ctb 22 ctb 26 ?68 max ?67.5 typ dbc dbc individual triple beat distortion @ +50 dbmv per ch. mid?split (5.0?120 mhz) t11, t12 and ch2 @ 123.25 mhz high?split (5.0?175 mhz) t13, ch2 and ch5 @ 175.5 mhz tb 3 tb 3 ?87 typ ?84 typ dbc dbc second order distortion @ +50 dbmv per ch. high?split (5.0?175 mhz) ch2, cha @ 176.5 mhz imd ?72 max dbc noise figure high?split (5.0?175 mhz) (2) nf 5.0 max db dc current i dc 210 typ/240 max madc notes: 1. response and return loss characteristics are tested and guaranteed for the full 5.0?200 mhz frequency range. 2. motorola 100% distortion and noise figure testing is performed over the 5.0?175 mhz frequency range. cross modulation and com posite triple beat testing are with 22?channel loading; video carriers used are: t7?t13 7.0?43.0 mhz 7?channels 2?6 55.25?83.25 mhz 5?channels a?7 121.25?175.25 mhz 10?channels 3. video carriers used for 12?channel typical performances are t7?6; for 26?channel typical performance, channels 8, 9, 10 and 1 1 are added to the 22?channel carriers listed above. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?9 mhw1253la motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 200 mhz frequency range ? specified for use as a return path amplifier for low?, mid? and high?split 2?way cable tv systems description ? 24 vdc supply, 5 to 200 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 200 mhz power gain (f = 5 mhz) g p 25 25.5 26 db slope (5?200 mhz) s ? 0.2 ? 0.7 db gain flatness (peak to valley) (5?200 mhz) g f ? ? 0.4 db return loss ? input/output (@ f = 5?150 mhz) (@ f = 150?200 mhz) irl/orl 20 18 ? ? ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?71 ?68 ?66 dbc  semiconductor technical data  5?200 mhz, 25.5 db 10?channel catv low current amplifier case 1302?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1253la 7?10 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?69 ?64 ?65 ?61 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?78 ?69 ?75 ?66 dbc noise figure (f = 5?200 mhz) nf ? 5.8 6.5 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?11 mhw1254l motorola wireless rf product device data the rf line   

features ? specified for 4?channel loading ? superior gain, return loss and dc current stability over temperature ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 50 mhz frequency range ? specified for use as a return path amplifier for low?split 2?way cable tv systems description ? 24 vdc supply, 5 to 50 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +70 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ohm system, unless otherwise noted) characteristic symbol min max unit bandwidth bw 5.0 50 mhz power gain (f = 5.0 mhz) g p 24.3 25.8 db return loss (@ f = 5.0?50 mhz) rl 20 ? db second order distortion (v out = +50 dbmv/ch) imd ? ?70 dbc cross modulation (v out = +50 dbmv/ch) xmd 4 ? ?62 dbc triple beat distortion (v out = +50 dbmv/ch) tb 3 ? ?70 dbc noise figure (f = 50 mhz) nf ? 4.5 db dc current idc 100 135 ma  semiconductor technical data  50 mhz, 25 db 4?channel catv low current amplifier case 1302?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1254la 7?12 motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 65 mhz frequency range ? specified for use as a return path amplifier for low?split 2?way cable tv systems description ? 24 vdc supply, 5 to 65 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 65 mhz power gain (f = 5 mhz) g p 25 25.5 26 db slope (5?65 mhz) s ? 0.2 ? 0.5 db gain flatness (peak to valley) (5?65 mhz) g f ? ? 0.4 db return loss ? input/output (@ f = 5?65 mhz) irl/orl 20 ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?71 ?68 ?66 dbc  semiconductor technical data  5?65 mhz, 25.5 db 10?channel catv low current amplifier case 1302?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?13 mhw1254la motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?69 ?64 ?65 ?61 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?78 ?69 ?75 ?66 dbc noise figure (f = 5?65 mhz) nf ? 5.8 6.5 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1303la 7?14 motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 200 mhz frequency range ? specified for use as a return path amplifier for low?, mid? and high?split 2?way cable tv systems description ? 24 vdc supply, 5 to 200 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 200 mhz power gain (f = 5 mhz) g p 30 30.8 31.2 db slope (5?200 mhz) s 0 ? 1.0 db gain flatness (peak to valley) (5?200 mhz) g f ? ? 0.7 db return loss ? input/output (@ f = 5?65 mhz) (@ f = 65?200 mhz) irl/orl 20 18 ? ? ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?70 ?68 ?65 dbc  semiconductor technical data  5?200 mhz, 30.8 db 10?channel catv low current amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?15 mhw1303la motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?67 ?61 ?64 ?58 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?76 ?67 ?74 ?64 dbc noise figure (f = 5?200 mhz) nf ? 5 5.7 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1304la 7?16 motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 65 mhz frequency range ? specified for use as a return path amplifier for low?split 2?way cable tv systems description ? 24 vdc supply, 5 to 65 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 65 mhz power gain (f = 5 mhz) g p 30 30.8 31.2 db slope (5?65 mhz) s ? 0.2 ? 0.5 db gain flatness (peak to valley) (5?65 mhz) g f ? ? 0.5 db return loss ? input/output (@ f = 5?65 mhz) irl/orl 20 ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?70 ?68 ?65 dbc  semiconductor technical data  5?65 mhz, 30.8 db 10?channel catv low current amplifier case 1302?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?17 mhw1304la motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?67 ?61 ?64 ?58 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?76 ?67 ?74 ?64 dbc noise figure (f = 5?65 mhz) nf ? 5 5.7 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1353la 7?18 motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 150 mhz frequency range ? specified for use as a return path amplifier for low?, mid? and high?split 2?way cable tv systems description ? 24 vdc supply, 5 to 150 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 150 mhz power gain (f = 5 mhz) g p 34.5 35.2 35.7 db slope (5?150 mhz) s 0 ? 1 db gain flatness (peak to valley) (5?150 mhz) g f ? ? 0.7 db return loss ? input/output (@ f = 5?65 mhz) (@ f = 65?150 mhz) irl/orl 20 18 ? ? ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?69 ?68 ?65 dbc  semiconductor technical data  5?150 mhz, 35.2 db 10?channel catv low current amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?19 mhw1353la motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?66 ?60 ?63 ?57 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?75 ?65 ?73 ?62 dbc noise figure (f = 5?150 mhz) nf ? 4.4 5.4 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw1354la 7?20 motorola wireless rf product device data the rf line   

features ? specified for 6? and 10?channel loading ? excellent distortion performance ? low power consumption ? capable of handling multiple channels in the return path with good distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 5 to 65 mhz frequency range ? specified for use as a return path amplifier for low?split 2?way cable tv systems description ? 24 vdc supply, 5 to 65 mhz, catv reverse amplifier maximum ratings parameter symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +60 dbmv operating case temperature range t c ? 20 to +100 c storage temperature range t stg ? 40 to +100 c electrical characteristics (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit bandwidth all bw 5 ? 65 mhz power gain (f = 5 mhz) g p 34.5 35.2 35.7 db slope (5?65 mhz) s ? 0.2 ? 0.5 db gain flatness (peak to valley) (5?65 mhz) g f ? ? 0.5 db return loss ? input/output (@ f = 5?65 mhz) irl/orl 20 ? ? db composite second order (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat cso 6 cso 10 ? ? ?73 ?69 ?68 ?65 dbc  semiconductor technical data  5?65 mhz, 35.2 db 10?channel catv low current amplifier case 1302?01, style 1 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?21 mhw1354la motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = 30 c, 75 ? system, unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat xmd 6 xmd 10 ? ? ?66 ?60 ?63 ?57 dbc composite triple beat (v out = +50 dbmv per ch., worst case) 6?channel flat 10?channel flat ctb 6 ctb 10 ? ? ?75 ?65 ?73 ?62 dbc noise figure (f = 5?65 mhz) nf ? 4.4 5.4 db dc current i dc 85 95 110 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw6342t 7?22 motorola wireless rf product device data the rf line   

features ? specified for 77?channel loading ? excellent distortion performance ? superior gain, return loss and dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 550 mhz frequency range ? single module high gain line amplifier in cable tv distribution system description ? 24 vdc supply, 40 to 550 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 550 mhz power gain 50 mhz 550 mhz g p 33.5 34.5 34.5 35.2 35.5 ? db slope s 0 0.7 2 db gain flatness (peak to valley) g f ? 0.3 0.8 db return loss ? input/output 40?550 mhz (z o = 75 ohms) 450?550 mhz irl/orl 18 16 ? ? ? ? db second order intermodulation distortion (v out = +46 dbmv per ch., ch 2, m13, m22) (v out = +44 dbmv per ch., ch 2, m30, m39) imd ? ? ?80 ?74 ? ? dbc cross modulation distortion (v out = +46 dbmv per ch.) 60?channel flat (v out = +44 dbmv per ch.) 77?channel flat xmd 60 xmd 77 ? ? ?62 ?63 ? ?57 dbc  semiconductor technical data  550 mhz 35.2 db gain 77?channel catv amplifier case 1302?01, style 1 rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?23 mhw6342t motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +46 dbmv per ch.) 60?channel flat (v out = +44 dbmv per ch.) 77?channel flat ctb 60 ctb 77 ? ? ?64 ?63 ? ?57 dbc composite second order (v out = +46 dbmv/ch, 60?channel flat) (v out = +44 dbmv/ch, 77?channel flat) cso 60 cso 77 ? ? ?70 ?65 ? ?57 dbc noise figure 550 mhz nf ? 5.5 6.5 db dc current i dc ? 310 340 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7182b 7?24 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 750 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 18 18.2 18.5 19 19 20 db slope 40?750 mhz s 0 0.4 1 db gain flatness (40?750 mhz, peak to valley) g f ? 0.3 0.6 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.005 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat cso 110 cso 77 ? ? ?70 ?70 ?63 ?64 dbc  semiconductor technical data  750 mhz 19 db gain 110?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?25 mhw7182b motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 110?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 77?channel flat xmd 110 xmd 77 ? ? ?66 ?61 ?64 ?59 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat ctb 110 ctb 77 ? ? ?68 ?66 ?66 ?64 dbc noise figure 50 mhz 550 mhz 750 mhz nf ? ? ? 4.0 4.5 5.0 5.0 ? 6.5 db dc current (v dc = 24 v, t c = 30 c) i dc 180 220 240 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7185c 7?26 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 750 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 18.3 19 18.8 19.4 19.3 20 db slope 40?750 mhz s 0 0.4 1.0 db gain flatness (40?750 mhz, peak to valley) g f ? 0.3 0.6 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 19 ? ? ? ? 0.006 db db/mhz composite second order (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 110 cso 77 ? ? ?72 ?80 ?64 ?68 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 110 xmd 77 ? ? ?66 ?70 ?63 ?68 dbc  semiconductor technical data  750 mhz 19.4 db gain 110?channel catv amplifier case 714y?04, style 1 rev 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?27 mhw7185c motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 110 ctb 77 ? ? ?64 ?71 ?62 ?69 dbc noise figure 50 mhz 550 mhz 750 mhz nf ? ? ? 5.0 5.8 6.2 6.0 ? 7.5 db dc current (v dc = 24 v, t c = 30 c) i dc 365 400 435 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7185cl 7?28 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? lower dc current requirements ? excellent distortion performance ? excellent dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? amplifier requiring lower power dissipation while maintaining excellent output performance description ? 24 vdc supply, 40 to 750 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 18 18.7 18.5 19.2 19 19.7 db slope 40?750 mhz s 0.3 0.6 1.3 db gain flatness (40?750 mhz, peak to valley) g f ? 0.3 0.6 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 110 cso 77 ? ? ?70 ?83 ?64 ?68 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 110 xmd 77 ? ? ?66 ?69 ?63 ?67 dbc  semiconductor technical data  750 mhz 19.2 db gain 110?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?29 mhw7185cl motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 110 ctb 77 ? ? ?63.5 ?70 ?61 ?68 dbc noise figure 50 mhz 550 mhz 750 mhz nf ? ? ? 5.3 5.8 6.5 6.2 ? 7.5 db dc current (v dc = 24 v, t c = ?20 to +100 c) i dc 345 370 385 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7205c 7?30 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 750 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 19.3 20 19.8 20.2 20.3 21 db slope 40?750 mhz s 0 0.4 1.0 db gain flatness (40?750 mhz, peak to valley) g f ? 0.3 0.6 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 19 ? ? ? ? 0.006 db db/mhz composite second order (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 110 cso 77 ? ? ?70 ?80 ?63 ?68 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 110 xmd 77 ? ? ?67 ?70 ?62 ?68 dbc  semiconductor technical data  750 mhz 20.2 db gain 110?channel catv amplifier case 714y?04, style 1 rev 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?31 mhw7205c motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 110 ctb 77 ? ? ?63 ?71 ?61 ?69 dbc noise figure 50 mhz 550 mhz 750 mhz nf ? ? ? 5.0 5.8 6.2 6.0 ? 7.5 db dc current (v dc = 24 v, t c = 30 c) i dc 365 400 435 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7205cl 7?32 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? lower dc current requirements ? excellent distortion performance ? excellent dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? amplifier requiring lower power dissipation while maintaining excellent output performance description ? 24 vdc supply, 40 to 750 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 19 19.7 19.5 20 20 21.2 db slope 40?750 mhz s 0.2 0.5 1.7 db gain flatness (40?750 mhz, peak to valley) g f ? 0.3 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 110 cso 77 ? ? ?69 ?80 ?63 ?67 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 110 xmd 77 ? ? ?65 ?69 ?62 ?66 dbc  semiconductor technical data  750 mhz 20 db gain 110?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?33 mhw7205cl motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 110 ctb 77 ? ? ?63 ?70 ?61 ?68 dbc noise figure 50 mhz 550 mhz 750 mhz nf ? ? ? 5.0 5.8 6.2 6.2 ? 7.5 db dc current (v dc = 24 v, t c = ?20 to +100 c) i dc 345 365 385 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7222b 7?34 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 750 mhz, catv forward amplifier maximum ratings rating symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +70 dbmv operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain f = 50 mhz f = 750 mhz g p 21.4 22.2 21.9 22.7 22.4 23.2 db slope (f = 40?750 mhz) s 0.2 0.7 1.2 ? gain flatness (peak to valley) (f = 40?750 mhz) g f ? 0.4 0.6 ? input/output return loss @ f = 40 mhz irl/orl 20 25 ? db derate return loss @ f > 40 mhz rld ? ? 0.006 db/mhz composite second order (v out = +40 dbmv/ch; 110 channels) (v out = +44 dbmv/ch; 77 channels) cso 110 cso 77 ? ? ?67 ?67 ?60 ?60 dbc  semiconductor technical data  750 mhz 22.7 db gain 110?channel catv amplifier case 1302?01, style 1 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?35 mhw7222b motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +40 dbmv/ch, 110?channel @ fm = 55.25 mhz) (v out = +44 dbmv/ch, 77?channel @ fm = 55.25 mhz) xmd 110 xmd 77 ? ? ?63 ?59 ?60 ?56 dbc composite triple beat (v out = +40 dbmv/ch, 110?channels, worst case) (v out = +44 dbmv/ch, 77?channels, worst case) ctb 110 ctb 77 ? ? ?64 ?65 ?61 ?62 dbc noise figure f = 50 mhz f = 750 mhz nf ? ? 3.7 5 4.5 6.5 db dc current i dc 180 220 240 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7242a 7?36 motorola wireless rf product device data the rf line   

features ? specified for 77? and 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 750 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 23.2 24 24 24.7 24.8 26 db slope 40?750 mhz s 0 0.6 1.5 db gain flatness (40?750 mhz, peak to valley) g f ? 0.4 0.6 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat cso 110 cso 77 ? ? ?69 ?78 ?62 ? dbc  semiconductor technical data  750 mhz 24.7 db gain 110?channel catv amplifier case 1302?01, style 1 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?37 mhw7242a motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 110?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 77?channel flat xmd 110 xmd 77 ? ? ?63 ?58 ?61 ? dbc composite triple beat (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat ctb 110 ctb 77 ? ? ?67 ?64 ?63 ? dbc noise figure 50 mhz 750 mhz nf ? ? 4.8 5.5 5.5 7 db dc current i dc 280 318 350 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw7272a 7?38 motorola wireless rf product device data the rf line   

features ? specified for 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 750 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 750 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 750 mhz power gain 50 mhz 750 mhz g p 26.2 27 27.2 27.7 27.8 29 db slope 40 ? 750 mhz s 0 0.7 1.5 db gain flatness (40 ? 750 mhz, peak to valley) g f ? 0.4 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 110?channel flat cso 110 ? ?70 ?64 dbc cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 110?channel flat xmd 110 ? ?63 ?60 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 110?channel flat ctb 110 ? ?68 ?64 dbc noise figure 50 mhz 750 mhz nf ? ? ? 5.5 5.5 6.5 db dc current (v dc = 24 v, t c = 30 c) i dc 280 310 350 ma  semiconductor technical data  750 mhz 27.7 db gain 110?channel catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?39 mhw7292a motorola wireless rf product device data the rf line   

features ? specified for 110?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 770 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 770 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 770 mhz power gain 50 mhz 770 mhz g p 28.2 29 29 29.8 29.8 31 db slope 40 ? 770 mhz s 0 0.7 2 db gain flatness (40 ? 750 mhz, peak to valley) g f ? 0.4 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 110?channel flat cso 110 ? ?70 ?60 dbc cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 110?channel flat xmd 110 ? ?62 ?60 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 110?channel flat ctb 110 ? ?62 ?60 dbc noise figure 50 mhz 770 mhz nf ? ? ? 5.5 5.5 6.5 db dc current (v dc = 24 v, t c = 30 c) i dc 280 310 350 ma  semiconductor technical data  770 mhz, 29.8 db gain 110?channel catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8182b 7?40 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? excellent distortion performance ? superior gain, return loss and dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 860 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 860 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 860 mhz power gain 50 mhz 860 mhz g p 18 18.2 18.5 19.1 19 20.5 db slope 40?860 mhz s 0 0.7 2.5 db gain flatness (40?860 mhz, peak to valley) g f ? 0.3 0.6 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.005 db db/mhz composite second order (v out = +38 dbmv/ch., worst case) 128?channel flat (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat cso 128 cso 110 cso 77 ? ? ? ?71 ?70 ?70 ?64 ?63 ?64 dbc  semiconductor technical data  860 mhz 19.1 db gain 128?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?41 mhw8182b motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +38 dbmv/ch., fm = 55 mhz) 128?channel flat (v out = +40 dbmv/ch., fm = 55 mhz) 110?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 77?channel flat xmd 128 xmd 110 xmd 77 ? ? ? ?68 ?66 ?61 ?65 ?64 ?59 dbc composite triple beat (v out = +38 dbmv/ch., worst case) 128?channel flat (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat ctb 128 ctb 110 ctb 77 ? ? ? ?69 ?68 ?66 ?66 ?66 ?64 dbc noise figure 50 mhz 550 mhz 750 mhz 860 mhz nf ? ? ? ? 4.0 4.5 5.0 5.5 5.0 ? 6.5 7.5 db dc current (v dc = 24 v, t c = 30 c) i dc 180 220 240 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8185 7?42 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 860 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 860 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 860 mhz power gain 50 mhz 860 mhz g p 18.3 19 18.8 19.4 19.3 20.5 db slope 40?860 mhz s 0 .5 1.5 db gain flatness (40?860 mhz, peak to valley) g f ? 0.3 1.0 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 19 ? ? ? ? 0.006 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 128 cso 110 cso 77 ? ? ? ?70 ?72 ?80 ?62 ?64 ?68 dbc cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 128?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 128 xmd 110 xmd 77 ? ? ? ?72 ?67 ?70 ?64 ?63 ?68 dbc  semiconductor technical data  860 mhz 19.4 db gain 128?channel catv amplifier case 714y?04, style 1 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?43 mhw8185 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 128 ctb 110 ctb 77 ? ? ? ?67 ?64 ?71 ?64 ?62 ?69 dbc noise figure 50 mhz 550 mhz 750 mhz 860 mhz nf ? ? ? ? 5.0 5.8 6.2 7.0 6.0 ? ? 8.0 db dc current (v dc = 24 v, t c = 30 c) i dc 365 400 435 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8185l 7?44 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? lower dc current requirements ? excellent distortion performance ? excellent dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? amplifiers requiring lower power dissipation while maintaining excellent output performance description ? 24 vdc supply, 40 to 870 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 50 mhz 870 mhz g p 18 19 18.5 19.4 19 20.5 db slope 40?870 mhz s 0.4 0.9 1.4 db gain flatness (40?870 mhz, peak?to?valley) g f ? 0.3 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat cso 128 cso 110 cso 77 ? ? ? ?69 ?70 ?85 ?62 ?64 ?68 dbc  semiconductor technical data  870 mhz 19.4 db gain 128?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?45 mhw8185l motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 128?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 77?channel flat xmd 128 xmd 110 xmd 77 ? ? ? ?72 ?66 ?69 ?64 ?63 ?67 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat ctb 128 ctb 110 ctb 77 ? ? ? ?66 ?63 ?70 ?63 ?61 ?68 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 5.3 5.8 6.6 7.8 6.2 ? ? 8.5 db dc current (v dc = 24 v, t c = ?20 to +100 c) i dc 345 365 385 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8202b 7?46 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 870 mhz, catv forward amplifier maximum ratings rating symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +70 dbmv operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain f = 50 mhz f = 870 mhz g p 19.8 20.3 20.4 20.9 20.8 21.8 db slope (f = 40?870 mhz) s ? 0.5 1.2 db gain flatness (peak to valley) (f = 40?870 mhz) g f ? 0.4 0.6 db input/output return loss @ f = 40 mhz irl/orl 20 21 ? db derate return loss @ f > 40 mhz rld ? ? 0.005 db/mhz composite second order (v out = +38 dbmv/ch; 128?channels, worst case) (v out = +40 dbmv/ch; 110?channels, worst case) (v out = +44 dbmv/ch; 77?channels, worst case) cso 128 cso 110 cso 77 ? ? ? ?71 ?70 ?75 ?66 ?65 ?70 dbc  semiconductor technical data  870 mhz 20.9 db gain 128?channel catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?47 mhw8202b motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +38 dbmv/ch, 128?channels, worst case) (v out = +40 dbmv/ch, 110?channels, worst case) (v out = +44 dbmv/ch, 77?channels, worst case) xmd 128 xmd 110 xmd 77 ? ? ? ?67 ?65 ?58 ?62 ?61 ?57 dbc composite triple beat (v out = +38 dbmv/ch, 128?channels, worst case) (v out = +40 dbmv/ch, 110?channels, worst case) (v out = +44 dbmv/ch, 77?channels, worst case) ctb 128 ctb 110 ctb 77 ? ? ? ?67 ?66 ?65 ?63 ?63 ?63 dbc noise figure f = 50 mhz f = 750 mhz f = 870 mhz nf ? ? ? 3.8 5.0 5.6 5.0 6.5 7.0 db dc current i dc 180 220 240 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8205 7?48 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 860 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems description ? 24 vdc supply, 40 to 860 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 860 mhz power gain 50 mhz 860 mhz g p 19.3 20 19.8 20.2 20.3 21.5 db slope 40?860 mhz s 0 .4 1.5 db gain flatness (40?860 mhz, peak to valley) g f ? 0.3 1.0 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 19 ? ? ? ? 0.006 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 128 cso 110 cso 77 ? ? ? ?69 ?70 ?80 ?60 ?63 ?68 dbc  semiconductor technical data  860 mhz 20.2 db gain 128?channel catv amplifier case 714y?04, style 1 rev 6 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?49 mhw8205 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 128?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 128 xmd 110 xmd 77 ? ? ? ?72 ?67 ?71 ?64 ?62 ?68 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 128 ctb 110 ctb 77 ? ? ? ?66 ?63 ?71 ?63 ?61 ?69 dbc noise figure 50 mhz 550 mhz 750 mhz 860 mhz nf ? ? ? ? 5.0 5.8 6.2 7.0 6.0 ? ? 8.0 db dc current (v dc = 24 v, t c = 30 c) i dc 365 400 435 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8205l 7?50 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? lower dc current requirements ? excellent distortion performance ? excellent dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? amplifiers requiring lower power dissipation while maintaining excellent output performance description ? 24 vdc supply, 40 to 870 mhz, catv forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 50 mhz 870 mhz g p 19 19.8 19.5 20.4 20 21.3 db slope 40?870 mhz s 0.2 0.8 1.7 db gain flatness (40?870 mhz, peak to valley) g f ? 0.5 1.0 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat cso 128 cso 110 cso 77 ? ? ? ?69 ?70 ?80 ?60 ?63 ?67 dbc  semiconductor technical data  870 mhz 20.4 db gain 128?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?51 mhw8205l motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 128?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 110?channel flat 77?channel flat xmd 128 xmd 110 xmd 77 ? ? ? ?72 ?65 ?69 ?64 ?62 ?66 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 110?channel flat 77?channel flat ctb 128 ctb 110 ctb 77 ? ? ? ?66 ?63 ?70 ?63 ?61 ?68 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 5.0 5.8 6.2 7.7 6.2 ? ? 8.5 db dc current (v dc = 24 v, t c = ?20 c to +100 c) i dc 345 365 385 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8222b 7?52 motorola wireless rf product device data the rf line   

features ? specified for 77?, 110? and 128?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 860 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 860 mhz, catv forward amplifier maximum ratings rating symbol value unit dc supply voltage v cc +28 vdc rf input voltage (single tone) v in +70 dbmv operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 860 mhz power gain f = 50 mhz f = 860 mhz g p 21.4 21.8 21.9 22.7 22.4 24 db slope (f = 40?860 mhz) s 0.1 0.8 1.5 ? gain flatness (peak to valley) (f = 40?860 mhz) g f ? 0.4 0.6 ? input/output return loss @ f = 40 mhz irl/orl 20 24 ? db derate return loss @ f > 40 mhz rld ? ? 0.009 db/mhz composite second order (v out = +38 dbmv/ch; 128 channels) (v out = +40 dbmv/ch; 110 channels) (v out = +44 dbmv/ch; 77 channels) cso 128 cso 110 cso 77 ? ? ? ?68 ?64 ?65 ?60 ?61 ?62 dbc  semiconductor technical data  860 mhz 22.7 db gain 128?channel catv amplifier case 1302?01, style 1 rev 3 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?53 mhw8222b motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion (v out = +38 dbmv/ch, 128?channel @ fm = 55.25 mhz) (v out = +40 dbmv/ch, 110?channel @ fm = 55.25 mhz) (v out = +44 dbmv/ch, 77?channel @ fm = 55.25 mhz) xmd 128 xmd 110 xmd 77 ? ? ? ?65 ?63 ?59 ?63 ?60 ?56 dbc composite triple beat (v out = +38 dbmv/ch, 128?channels, worst case) (v out = +40 dbmv/ch, 110?channels, worst case) (v out = +44 dbmv/ch, 77?channels, worst case) ctb 128 ctb 110 ctb 77 ? ? ? ?66 ?64 ?65 ?64 ?61 ?62 dbc noise figure f = 50 mhz f = 750 mhz f = 860 mhz nf ? ? ? 3.7 5 5.6 4.5 6.5 7 db dc current i dc 180 220 240 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw8242a 7?54 motorola wireless rf product device data the rf line   

features ? specified for 77? and 128?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 860 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 860 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 860 mhz power gain 50 mhz 860 mhz g p 23.2 24 24 25 24.8 26 db slope 40?860 mhz s 0 0.8 1.8 db gain flatness (40?860 mhz, peak to valley) g f ? 0.4 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +38 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat cso 128 cso 77 ? ? ?69 ?78 ?62 ? dbc cross modulation distortion @ ch 2 (v out = +38 dbmv/ch., fm = 55 mhz) 128?channel flat (v out = +44 dbmv/ch., fm = 55 mhz) 77?channel flat xmd 128 xmd 77 ? ? ?65 ?58 ?62 ? dbc composite triple beat (v out = +38 dbmv/ch., worst case) 128?channel flat (v out = +44 dbmv/ch., worst case) 77?channel flat ctb 128 ctb 77 ? ? ?68 ?64 ?64 ? dbc noise figure 50 mhz 860 mhz nf ? ? 4.8 5.8 5.5 7.5 db dc current i dc 280 318 350 ma  semiconductor technical data  860 mhz 25 db gain 128?channel catv amplifier case 1302?01, style 1 rev 4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?55 mhw8272a motorola wireless rf product device data the rf line   

features ? specified for 128?channel loading ? excellent distortion performance ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 860 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 860 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 860 mhz power gain 50 mhz 860 mhz g p 26.2 27 27.2 27.7 27.8 29.5 db slope 40?860 mhz s 0 0.6 2 db gain flatness (40?860 mhz, peak to valley) g f ? 0.4 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.007 db db/mhz composite second order (v out = +38 dbmv/ch., worst case) 128?channel flat cso 128 ? ?69 ?64 dbc cross modulation distortion @ ch 2 (v out = +38 dbmv/ch., fm = 55 mhz) 128?channel flat xmd 128 ? ?65 ?62 dbc composite triple beat (v out = +38 dbmv/ch., worst case) 128?channel flat ctb 128 ? ?69 ?64 dbc noise figure 50 mhz 860 mhz nf ? ? ? 6.0 5.5 7.0 db dc current (v dc = 24 v, t c = 30 c) i dc 280 310 350 ma  semiconductor technical data  860 mhz 27.7 db gain 128?channel catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9146 7?56 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? output stage amplifier on applications requiring low power dissipation and high output performance ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward amplifier module maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 200 200 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 13.8 14.3 14.8 db slope 40?870 mhz s 0 0.4 1.0 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input (z o = 75 ohms) 40?500 mhz f > 501 mhz irl 20 18 ? ? ? ? db return loss ? output (z o = 75 ohms) 40?160 mhz f > 160 mhz orl 20 18 ? ? ? ? db  semiconductor technical data  870 mhz 14.3 db gain 132?channel gaas catv amplifier module case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?57 mhw9146 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat cso 79 cso 112 cso 132 ? ? ? ?68 ?63 ?63 ?64 ?60 ?60 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55.25 mhz ) 79?channel flat (v out = +46 dbmv/ch., fm = 55.25 mhz) 112?channel flat (v out = +44 dbmv/ch., fm = 55.25 mhz) 132?channel flat xmd 79 xmd 112 xmd 132 ? ? ? ?60 ?60 ?60 ?55 ?55 ?55 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat ctb 79 ctb 112 ctb 132 ? ? ? ?64 ?64 ?64 ?60 ?60 ?60 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 4.4 3.8 4.0 4.3 5.5 ? ? 5.5 db dc current (v dc = 24 v, t c = 45 c) i dc 230 245 260 ma note: this device requires an external 0.01 f dc blocking capacitor connected to the output pin (pin 9) as indicated in figure 1. figure 14. external connections  
              f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9182b 7?58 motorola wireless rf product device data the rf line   

features ? specified for 110? and 152?channel loading ? excellent distortion performance ? superior gain, return loss and dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 1000 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 1000 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 1000 mhz power gain 50 mhz 1000 mhz g p 18 18.7 18.5 19.4 19 20.7 db slope 40?1000 mhz s 0.4 0.9 1.4 db gain flatness (40?1000 mhz, peak to valley) g f ? 0.4 0.8 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.006 db db/mhz composite second order (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +38 dbmv/ch., worst case) 152?channel flat cso 110 cso 152 ? ? 70 ?69 ?63 ?63 dbc cross modulation distortion @ ch 2 (v out = +40 dbmv/ch., fm = 55 mhz) 110?channel flat (v out = +38 dbmv/ch., fm = 55 mhz) 152?channel flat xmd 110 xmd 152 ? ? ?66 ?65 ?64 ?61 dbc composite triple beat (v out = +40 dbmv/ch., worst case) 110?channel flat (v out = +38 dbmv/ch., worst case) 152?channel flat ctb 110 ctb 152 ? ? ?68 ?64 ?66 ?61 dbc noise figure 50 mhz 550 mhz 860 mhz 1000 mhz nf ? ? ? ? 4.0 4.5 5.5 6.0 5.0 ? ? 7.5 db dc current (v dc = 24 v, t c = 30 c) i dc 180 210 240 ma  semiconductor technical data  1000 mhz 19.4 db gain 152?channel catv amplifier case 714y?04, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?59 mhw9186 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? output stage amplifier on applications requiring low power dissipation and high output performance ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 300 300 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 50 mhz 870 mhz g p 17.5 18 18 18.5 18.5 19.5 db slope 40?870 mhz s 0.2 0.6 1.2 db gain flatness (40?870 mhz, peak?to?valley) g f ? 0.3 0.8 db return loss ? input (z o = 75 ohms) 40?200 mhz 200?600 mhz 600?870 mhz irl 20 19 18 ? ? ? ? ? ? db return loss ? output (z o = 75 ohms) 40?200 mhz 200?600 mhz 600?870 mhz orl 20 19 18 ? ? ? ? ? ? db  semiconductor technical data  870 mhz 18.5 db gain 132?channel gaas catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9186 7?60 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +44 dbmv/ch., worst case) 132?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat cso 132 cso 112 cso 79 ? ? ? ?67 ?65 ?72 ?60 ?61 ?64 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +46 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat xmd 132 xmd 112 xmd 79 ? ? ? ?58 ?58 ?58 ?52 ?52 ?52 dbc composite triple beat (v out = +44 dbmv/ch., worst case) 132?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat ctb 132 ctb 112 ctb 79 ? ? ? ?62 ?61 ?64 ?58 ?58 ?60 dbc noise figure 50 mhz 870 mhz nf ? ? 4 3.7 5.0 5.0 db dc current (v dc = 24 v, t c = ?20 to +100 c) i dc 230 250 265 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?61 mhw9187 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? higher output capability ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 200 200 v human body model per mil. std. 1686 0.7 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 19.4 20 20.6 db slope 40?870 mhz s 0 0.5 1.0 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input (z o = 75 ohms) 40?500 mhz 501?750 mhz 751?870 mhz irl 20 18 16 ? ? ? ? ? ? db return loss ? output (z o = 75 ohms) 40?160 mhz f > 160 mhz orl 20 18 ? ? ? ? db  semiconductor technical data 870 mhz 20 db gain 132?channel gaas catv amplifier case 1302?01, style 1  rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9187 7?62 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?64 ?66 ?70 ?65 ?64 ?63 ?69 ?74 ?73 ?62 ?64 ?68 ?63 ?62 ?61 ?67 ?72 ?71 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?57 ?59 ?62 ?53 ?55 ?58 ?60 ?62 ?67 ?55 ?57 ?60 ?51 ?53 ?56 ?47 ?60 ?65 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?60 ?64 ?68 ?60 ?61 ?64 ?66 ?71 ?74 ?56 ?60 ?66 ?58 ?59 ?62 ?64 ?69 ?72 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 4.0 3.5 3.5 4.0 4.5 4.5 4.5 4.5 db dc current (v dc = 24 v, t c = 45 c) i dc 410 425 440 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?63 mhw9188 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? higher output capability ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +75 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 300 300 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 19.7 20.3 20.9 db slope 40?870 mhz s 0 0.5 1.0 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input (z o = 75 ohms) 40?500 mhz 501?750 mhz 751?870 mhz irl 20 18 16 ? ? ? ? ? ? db return loss ? output (z o = 75 ohms) 40?160 mhz f > 160 mhz orl 20 18 ? ? ? ? db  semiconductor technical data 870 mhz 20.3 db gain 132?channel gaas catv amplifier case 1302?01, style 1  rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9188 7?64 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?64 ?66 ?70 ?65 ?64 ?63 ?69 ?74 ?73 ?62 ?64 ?68 ?63 ?62 ?61 ?67 ?72 ?71 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?57 ?59 ?62 ?53 ?55 ?58 ?60 ?62 ?67 ?55 ?57 ?60 ?51 ?53 ?56 ?47 ?60 ?65 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?58 ?62 ?68 ?60 ?61 ?64 ?66 ?71 ?74 ?56 ?60 ?66 ?58 ?59 ?62 ?64 ?69 ?72 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 db dc current (v dc = 24 v, t c = 45 c) i dc 410 425 440 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?65 mhw9189 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? mirror image of mhw9188 ? excellent distortion performance ? higher output capability ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward mirror power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +75 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 300 300 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 19.7 20.3 20.9 db slope 40?870 mhz s 0 0.5 1.0 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input (z o = 75 ohms) 40?500 mhz 501?750 mhz 751?870 mhz irl 20 18 16 ? ? ? ? ? ? db return loss ? output (z o = 75 ohms) 40?160 mhz f > 160 mhz orl 20 18 ? ? ? ? db  semiconductor technical data 870 mhz 20.3 db gain 132?channel gaas catv amplifier case 1302?01, style 2  rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9189 7?66 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?64 ?66 ?70 ?65 ?64 ?63 ?69 ?74 ?73 ?62 ?64 ?68 ?63 ?62 ?61 ?67 ?72 ?71 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?57 ?59 ?62 ?53 ?55 ?58 ?60 ?62 ?67 ?55 ?57 ?60 ?51 ?53 ?56 ?47 ?60 ?65 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?58 ?62 ?68 ?60 ?61 ?64 ?66 ?71 ?74 ?56 ?60 ?66 ?58 ?59 ?62 ?64 ?69 ?72 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 db dc current (v dc = 24 v, t c = 45 c) i dc 410 425 440 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?67 mhw9206 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 47 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? output stage amplifier on applications requiring low power dissipation and high output performance ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 47 to 870 mhz, catv gaas forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 300 300 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 47 ? 870 mhz power gain 870 mhz g p 19.6 20.2 20.8 db slope 47?870 mhz s 0.4 0.8 1.4 db gain flatness (47?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input/output (z o = 75 ohms) 47?500 mhz 501?750 mhz 751?870 mhz irl/orl 20 19 18 ? ? ? ? ? ? db composite second order (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat cso 79 cso 112 cso 132 ? ? ? ?66 ?62 ?63 ?63 ?59 ?59 dbc  semiconductor technical data  870 mhz 20.2 db gain 132?channel gaas catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9206 7?68 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55.25 mhz) 79?channel flat (v out = +46 dbmv/ch., fm = 55.25 mhz) 112?channel flat (v out = +44 dbmv/ch., fm = 55.25 mhz) 132?channel flat xmd 79 xmd 112 xmd 132 ? ? ? ?55 ?55 ?57 ?51 ?51 ?51 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat ctb 79 ctb 112 ctb 132 ? ? ? ?62 ?60 ?60 ?60 ?57 ?57 dbc noise figure 50 mhz 870 mhz nf ? ? 3.8 4 4.5 4.5 db dc current (v dc = 24 v, t c = 45 c) i dc 230 245 260 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?69 mhw9227 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? higher output capability ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 47 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 47 to 870 mhz, catv gaas forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 200 200 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 47 ? 870 mhz power gain 870 mhz g p 21.5 22.1 22.7 db slope 47?870 mhz s 0 0.5 1.0 db gain flatness (40?870 mhz, peak?to?valley) ? ? ? 0.7 db return loss ? input/output (z o = 75 ohms) 47?500 mhz 501?750 mhz 751?870 mhz irl 20 18 16 ? ? ? ? ? ? db  semiconductor technical data  870 mhz 22.1 db gain 132?channel gaas catv amplifier module case 1302?01, style 1 rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9227 7?70 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?64 ?66 ?70 ?65 ?64 ?63 ?69 ?74 ?73 ?62 ?64 ?68 ?63 ?62 ?61 ?67 ?72 ?71 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?57 ?59 ?62 ?53 ?55 ?58 ?60 ?62 ?67 ?55 ?57 ?60 ?51 ?53 ?56 ?47 ?60 ?65 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?58 ?62 ?66 ?57 ?58 ?60 ?63 ?65 ?69 ?56 ?60 ?64 ?55 ?56 ?58 ?61 ?63 ?67 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 db dc current (v dc = 24 v, t c = 45 c) i dc 410 425 440 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
this document contains information on a new product. specifications and information herein are subject to change without notice. 7?71 mhw9236 motorola wireless rf product device data  
 
 the rf line features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? integrated esd protection diodes ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward amplifier module maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 200 200 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 23 23.6 24.3 db slope 40?870 mhz s 0 0.4 1.0 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.8 db return loss ? input (z o = 75 ohms) 40?500 mhz f > 501 mhz irl 20 18 ? ? ? ? db semiconductor technical data 870 mhz 23.6 db gain 132?channel gaas catv amplifier module case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9236 7?72 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit return loss ? output (z o = 75 ohms) 40?300 mhz 301?750 mhz f > 750 mhz orl 20 19 16 ? ? ? ? db composite second order (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat cso 79 cso 112 cso 132 ? ? ? ?66 ?64 ?64 ?63 ?60 ?60 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55.25 mhz) 79?channel flat (v out = +46 dbmv/ch., fm = 55.25 mhz) 112?channel flat (v out = +44 dbmv/ch., fm = 55.25 mhz) 132?channel flat xmd 79 xmd 112 xmd 132 ? ? ? ?57 ?57 ?57 ?53 ?53 ?53 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat ctb 79 ctb 112 ctb 132 ? ? ? ?66 ?66 ?68 ?60 ?60 ?60 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 5.0 5.0 5.0 5.3 6.0 ? ? 6.0 db dc current (v dc = 24 v, t c = 45 c) i dc 240 255 270 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?73 mhw9242a motorola wireless rf product device data the rf line   

features ? specified for 77?, 110?, 128? and 152?channel loading ? excellent distortion performance ? superior gain, return loss and dc current stability over temperature ? silicon bipolar transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 1000 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications ? output stage amplifier on applications requiring low power dissipation description ? 24 vdc supply, 40 to 1000 mhz, catv forward amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +55 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 1000 mhz power gain 50 mhz 1000 mhz g p 23.2 24 ? ? 24.8 26 db slope 40?1000 mhz s 0 ? 2.5 db gain flatness (40?1000 mhz, peak?to?valley) g f ? ? 1.0 db return loss ? input/output (z o = 75 ohms) @ 40 mhz @ f > 40 mhz (derate) irl/orl 20 ? ? ? ? 0.01 db db/mhz composite second order (v out = +38 dbmv/ch; worst case) 152?channel flat (v out = +38 dbmv/ch; worst case) 128?channel flat (v out = +40 dbmv/ch;worst case ) 110?channel flat (v out = +44 dbmv/ch; worst case) 77?channel flat cso 152 cso 128 cso 110 cso 77 ? ? ? ? ?66 ?69 ?69 ?78 ?61 ? ? ? dbc cross modulation distortion @ ch 2 (v out = +38 dbmv/ch., fm= 55 mhz) 152?channel flat (v out = +38 dbmv/ch, fm = 55.25 mhz) 128?channel flat (v out = +40 dbmv/ch, fm = 55.25 mhz) 110?channel flat (v out = +44 dbmv/ch, fm = 55.25 mhz) 77?channel flat xmd 152 xmd 128 xmd 110 xmd 77 ? ? ? ? ?62 ?65 ?63 ?58 ?59 ? ? ? dbc  semiconductor technical data  1000 mhz 24 db gain 152?channel catv amplifier case 1302?01, style 1 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9242a 7?74 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite triple beat (v out = +38 dbmv/ch., worst case) 152?channel flat (v out = +38 dbmv/ch, worst case) 128?channel flat (v out = +40 dbmv/ch, worst case) 110?channel flat (v out = +44 dbmv/ch, worst case) 77?channel flat ctb 152 ctb 128 ctb 110 ctb 77 ? ? ? ? ?64 ?68 ?67 ?64 ?58 ? ? ? dbc noise figure f = 50 mhz f = 750 mhz f = 860 mhz f = 1000 mhz nf ? ? ? ? 4.8 5.5 5.8 ? 5.5 7.0 7.5 8.0 db dc current i dc 280 318 350 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?75 mhw9247 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? higher output capability ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward power doubler amplifier maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +28 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 300 300 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 24.4 24.9 25.4 db slope 40?870 mhz s 0 0.5 1.0 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input (z o = 75 ohms) 40?500 mhz 501?750 mhz 751?870 mhz irl 20 18 16 ? ? ? ? ? ? db return loss ? output (z o = 75 ohms) 40?160 mhz f > 160 mhz orl 20 18 ? ? ? ? db  semiconductor technical data  870 mhz 24.9 db gain 132?channel gaas catv amplifier case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9247 7?76 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?64 ?66 ?70 ?66 ?67 ?68 ?71 ?74 ?74 ?62 ?64 ?68 ?64 ?65 ?66 ?69 ?72 ?72 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?56 ?58 ?60 ?53 ?54 ?55 ?55 ?58 ?61 ?54 ?56 ?58 ?51 ?52 ?53 ?53 ?56 ?59 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?58 ?61 ?68 ?58 ?59 ?61 ?64 ?67 ?69 ?56 ?59 ?66 ?56 ?57 ?59 ?62 ?65 ?67 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 5.5 5.5 5.8 6.0 7.0 7.0 7.0 7.0 db dc current (v dc = 24 v, t c = 45 c) i dc 420 440 460 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?77 mhw9267 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? higher output capability ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 47 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 47 to 870 mhz, catv gaas forward power doubler amplifier module maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 200 200 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 27 27.6 28.2 db slope 47?870 mhz s 0 0.7 1.4 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.5 db return loss ? input (z o = 75 ohms) 47?500 mhz 501?750 mhz 751?870 mhz irl 20 18 16 ? ? ? ? ? ? db  semiconductor technical data  870 mhz 27.6 db gain 132?channel gaas catv amplifier module case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9267 7?78 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit return loss ? output (z o = 75 ohms) 47?160 mhz f > 160 mhz orl 20 18 ? ? ? ? db composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?62 ?64 ?68 ?64 ?65 ?66 ?69 ?71 ?72 ?60 ?62 ?66 ?62 ?63 ?64 ?67 ?69 ?70 dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?56 ?58 ?60 ?52 ?53 ?55 ?55 ?58 ?61 ?54 ?56 ?58 ?50 ?51 ?53 ?52 ?56 ?59 dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?58 ?61 ?66 ?58 ?59 ?61 ?62 ?64 ?67 ?56 ?59 ?64 ?56 ?57 ?59 ?60 ?62 ?65 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 5.5 5.5 5.8 6.0 7.0 7.0 7.0 7.0 db dc current (v dc = 24 v, t c = 45 c) i dc 410 440 460 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?79 mhw9276 motorola wireless rf product device data the rf line !"  #
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features ? 79?, 112? and 132?channel loading ? excellent distortion performance ? integrated esd protection diodes ? gaas fet transistor technology ? unconditionally stable under all load conditions applications ? catv systems operating in the 40 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv gaas forward amplifier module maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c esd maximum ratings rating input value output value unit surge voltage per iec 1000?4?5 200 200 v human body model per mil. std. 1686 2 2 kv electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 870 mhz g p 27 27.9 28.5 db slope 40?870 mhz s 0.4 0.95 1.4 db gain flatness (40?870 mhz, peak?to?valley) g f ? ? 0.8 db  semiconductor technical data  870 mhz 27.9 db gain 132?channel gaas catv amplifier module case 1302?01, style 1 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mhw9276 7?80 motorola wireless rf product device data electrical characteristics ? continued (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit input return loss (z o = 75 ohms) 40?200 mhz 201?600 mhz 601?870 mhz irl 20 19 18 ? ? ? ? db output return loss (z o = 75 ohms) 40?200 mhz 201?600 mhz 601?870 mhz orl 20 18 18 ? ? ? ? db composite second order (v out = +44 dbmv/ch., worst case) 79?channel flat (v out = +44 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat cso 79 cso 112 cso 132 ? ? ? ?70 ?66 ?66 ?64 ?62 ?60 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55.25 mhz) 79?channel flat (v out = +44 dbmv/ch., fm = 55.25 mhz) 112?channel flat (v out = +44 dbmv/ch., fm = 55.25 mhz) 132?channel flat xmd 79 xmd 112 xmd 132 ? ? ? ?60 ?60 ?60 ?53 ?53 ?53 dbc composite triple beat (v out = +44 dbmv/ch., worst case) 79?channel flat (v out = +44 dbmv/ch., worst case) 112?channel flat (v out = +44 dbmv/ch., worst case) 132?channel flat ctb 79 ctb 112 ctb 132 ? ? ? ?71 ?68 ?66 ?65 ?61 ?60 dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 5.0 5.0 5.0 5.0 5.5 ? ? 6.5 db dc current (v dc = 24 v, t c = 45 c) i dc 235 250 265 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?81 mmg1001r2 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions ? in tape and reel. r2 suffix = 1,500 units per 16 mm, 13 inch reel. applications ? catv systems operating in the 40 to 870 mhz frequency range ? input stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? output stage amplifier on applications requiring low power dissipation and high output performance ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv integrated forward amplifier module maximum ratings rating symbol value unit rf voltage input (single tone) v in +65 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c note: mmg1001r2 moisture sensitivity level (msl) = 3.  semiconductor technical data ! case 978?03 pfp?16 870 mhz 18.5 db gain 132?channel catv integrated amplifier module 16 1 functional diagram  pin connections                     !    !      "      "    ! !       #  #  # #  #  #  #  #  rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmg1001r2 7?82 motorola wireless rf product device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) charge device model c5 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 6.6 c/w electrical characteristics (v cc = 24 vdc, t c = +30 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 50 mhz 870 mhz g p ? ? 18 19 ? ? db slope 40?870 mhz s ? 0.6 ? db gain flatness (40?870 mhz, peak to valley) g f ? 0.5 ? db input return loss (z o = 75 ohms) f = 40?160 mhz f = 161?450 mhz f = 451?870 mhz irl ? ? 21 19 22 ? ? ? db output return loss (z o = 75 ohms) f = 40?400 mhz f = 401?870 mhz orl ? ? 22 17 ? ? db composite second order (v out = +44 dbmv/ch., worst case) 132?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat cso 132 cso 112 cso 79 ? ? ? ?65 ?65 ?71 ?58 ?59 ?62 dbc cross modulation distortion @ ch 2 (v out = +44 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +46 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat xmd 132 xmd 112 xmd 79 ? ? ? ?64 ?63 ?62 ?52 ?52 ?52 dbc composite triple beat (v out = +44 dbmv/ch., worst case) 132?channel flat (v out = +46 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat ctb 132 ctb 112 ctb 79 ? ? ? ?63 ?64 ?65 ?56 ?56 ?58 dbc noise figure 50 mhz 870 mhz nf ? ? 4 4 5.0 5.0 db dc current (v dc = 24 v, t c = ?20 to +100 c) i dc 230 250 265 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?83 mmg1001r2 motorola wireless rf product device data    " #   #  #    figure 1. mmg1001r2 50?870 mhz test circuit schematic              #  #  #  #  #     " $ $               " table 1. mmg1001r2 50?870 mhz test circuit component designations and values designation description c1, c7, c8, c11 220 pf chip capacitors (0603) c2, c3, c4, c9, c10 0.01  f chip capacitors (0603) c5, c6 1.8 pf chip capacitors (0603) c12 5.6 pf chip capacitor (0603) d1 5.1 v zener diode, on/mm3z5v1t1 d2 27 v zener diode, on/mm3z27vt1 d3 transient voltage suppressor, on/1.5k27a/1.5smc27at3 l1, l2 22 nh chip inductors (0603) q1, q2 dual transistors package, on/mbt3904dw1t1 r1 2.2 k  , 1/4 w chip resistor (1206) r2 560  chip resistor (0603) r3 82  chip resistor (0603) r4, r5 820  chip resistors (0603) r6 120  chip resistor (0603) r7 1.5 k  chip resistor (0603) r8 12  , 1 w chip resistor (2512) r9, r10, r15 470  chip resistors (0603) r11, r12 18  chip resistors (0603) r13, r14 910  chip resistors (0603) r16 2 k  chip resistor (0603) r17 6.2 k  chip resistor (0603) r18 5.6  chip resistor (0603) r19 0  chip resistor (0603) t1 input transformer, mot/77pc016e068 t2 output transformer, mot/77pc016e061 pcb fr4, 62 mil, r = 4.81 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmg1001r2 7?84 motorola wireless rf product device data figure 2. mmg1001r2 50?870 mhz test circuit component layout " %
&%' (   " mmg1001r2 rev 0   "               "     $ $           f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?85 mmg1001r2 motorola wireless rf product device data typical characteristics  ) )   *+, -.  //0 123 figure 3. composite triple beat versus frequency  +.41! /4 $/4+/
4*+& )56##7 $6*#8. 76% ) )    *+,  *+,  *+,  *+,  ) )  -.  //0 123 figure 4. composite second order versus frequency !.41! /4!/"4 "/ 4*+& ) ) )    *+, )56##7 $6*#8. 76%  *+,  *+,  *+,  *+,  ) )  -.  //0 123 figure 5. cross modulation distortion versus frequency 91".4 !!41"$
4"!  4*+& ) ) )    *+, )56##7 $6*#8. 76%  *+,  *+,  *+,  *+, f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmg2001r2 7?86 motorola wireless rf product device data the rf line !"  #
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features ? specified for 79?, 112? and 132?channel loading ? excellent distortion performance ? higher output capability ? built?in input diode protection ? gaas fet transistor technology ? unconditionally stable under all load conditions ? in tape and reel. r2 suffix = 1,500 units per 16 mm, 13 inch reel. applications ? catv systems operating in the 40 to 870 mhz frequency range ? output stage amplifier in optical nodes, line extenders and trunk distribution amplifiers for catv systems ? driver amplifier in linear general purpose applications description ? 24 vdc supply, 40 to 870 mhz, catv integrated forward power doubler amplifier module maximum ratings rating symbol value unit rf voltage input (single tone) v in +70 dbmv dc supply voltage v cc +26 vdc operating case temperature range t c ?20 to +100 c storage temperature range t stg ?40 to +100 c note: mmg2001r2 moisture sensitivity level (msl) = 3.  semiconductor technical data ! case 978?03 pfp?16 870 mhz 19.5 db gain 132?channel catv integrated amplifier module 16 1 pin connections                     !    !      "      "     ! !       #  #  # #  #  #  #  #  functional diagram rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?87 mmg2001r2 motorola wireless rf product device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) charge device model c5 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 4.7 c/w electrical characteristics (v cc = 24 vdc, t c = +45 c, 75 ? system unless otherwise noted) characteristic symbol min typ max unit frequency range bw 40 ? 870 mhz power gain 40 mhz 870 mhz g p ? ? 19 21 ? ? db slope 40?870 mhz s ? 0.8 ? db gain flatness (40?870 mhz, peak to valley) g f ? 0.5 ? db input return loss (z o = 75 ohms) f = 40?160 mhz f = 161?450 mhz f = 451?870 mhz irl ? ? 21 19 22 ? ? ? db output return loss (z o = 75 ohms) f = 40?400 mhz f = 401?870 mhz orl ? ? 22 17 ? ? db composite second order (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt cso 132 cso 112 cso 79 cso 112 cso 112 cso 112 cso 79 cso 79 cso 79 ? ? ? ? ? ? ? ? ? ?68 ?70 ?74 ?63 ?62 ?61 ?67 ?72 ?71 ?60 ?62 ?66 ? ? ? ? ? ? dbc cross modulation distortion @ ch 2 (v out = +48 dbmv/ch., fm = 55 mhz) 132?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 112?channel flat (v out = +48 dbmv/ch., fm = 55 mhz) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt xmd 132 xmd 112 xmd 79 xmd 112 xmd 112 xmd 112 xmd 79 xmd 79 xmd 79 ? ? ? ? ? ? ? ? ? ?55 ?57 ?60 ?51 ?53 ?56 ?58 ?60 ?65 ?53 ?55 ?58 ? ? ? ? ? ? dbc composite triple beat (v out = +48 dbmv/ch., worst case) 132?channel flat (v out = +48 dbmv/ch., worst case) 112?channel flat (v out = +48 dbmv/ch., worst case) 79?channel flat (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 12 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 13.5 db tilt (v out = +56 dbmv @ 870 mhz equiv) 112?channel, 17 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 12 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 13.5 db tilt (v out = +58 dbmv @ 870 mhz equiv) 79?channel, 17 db tilt ctb 132 ctb 112 ctb 79 ctb 112 ctb 112 ctb 112 ctb 79 ctb 79 ctb 79 ? ? ? ? ? ? ? ? ? ?56 ?60 ?66 ?58 ?59 ?62 ?64 ?69 ?72 ?54 ?58 ?64 ? ? ? ? ? ? dbc noise figure 50 mhz 550 mhz 750 mhz 870 mhz nf ? ? ? ? 4.0 4.0 4.0 4.0 4.5 4.5 4.5 4.5 db dc current (v dc = 24 v, t c = 45 c) i dc 410 425 440 ma f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
mmg2001r2 7?88 motorola wireless rf product device data   figure 1. mmg2001r2 50?870 mhz test circuit schematic    " #   #  #             #  #  #  #  #     "               "  table 1. mmg2001r2 50?870 mhz test circuit component designations and values designation description c1, c7, c8, c11 220 pf chip capacitors (0603) c2, c3, c4, c9, c10 0.01  f chip capacitors (0603) c5, c6 1.8 pf chip capacitors (0603) d1 5.1 v zener diode, on/mm3z5v1t1 d2 27 v zener diode, on/mm3z27vt1 d3 transient voltage suppressor, on/1.5k27a/1.5smc27at3 q1, q2 dual transistors package, on/mbt3904dw1t1 r1 2.2 k  , 1/4 w chip resistor (1206) r2 680  chip resistor (0603) r3 180  chip resistor (0603) r4 1600  chip resistor (0603) r5 820  chip resistor (0603) r6 120  chip resistor (0603) r7 1.5 k  chip resistor (0603) r8 8  , 1 w chip resistor (2512) r9, r10, r15 470  chip resistors (0603) r11, r12 18  chip resistors (0603) r13, r14 680  chip resistors (0603) r16 2.4 k  chip resistor (0603) r17 6.2 k  chip resistor (0603) r18 0  chip resistor (0603) t1 input transformer, mot/77pc016e080 t2 output transformer, mot/77pc016e071 t3 output transformer, mot/77pc016e072 pcb fr4, 62 mil, r = 4.81 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7?89 mmg2001r2 motorola wireless rf product device data  figure 2. mmg2001r2 50?870 mhz test circuit component layout b c mmg2001r2 rev 0 " %
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mmg2001r2 7?90 motorola wireless rf product device data typical characteristics  ) )  -.  //0 123 figure 3. composite triple beat versus frequency  +.41! /4 $/4+/
4*+&  56##7:.  *+ 7% ;  123 ) ) ) )    *+,  *+,  *+,  *+,  *+,  *+,  *+,  *+,  *+,  ) )  -.  //0 123 figure 4. composite second order versus frequency !.41! /4!/"4 "/ 4*+& ) ) )    56##7:.  *+ 7% ;  123  *+,  *+,  *+,  *+,  *+,  ) )  -.  //0 123 figure 5. cross modulation distortion versus frequency 91".4 !!41"$
4"!  4*+& ) ) ) ) ) )    *+,  *+,  56##7:.  *+ 7% ;  123  *+,  *+,  *+,  *+,  *+, f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
8?1 tape and reel specifications motorola wireless rf product device data tape and reel specifications chapter eight table of contents page tape and reel specifications 8?2 . . . . . . . . . . . . . . . . . . . embossed tape and reel ordering information 8?4 . . embossed tape and reel data for discretes 8?5 . . . . motorola offers the convenience of tape and reel packaging for our growing family of standard integrated circuit products. reels are available to support the requirements of both first and second generation pick?and?place equipment. the packaging fully conforms to the latest eia?481a specification. the antistatic embossed tape provides a secure cavity, sealed with a peel?back cover tape. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
tape and reel specifications 8?2 motorola wireless rf product device data rf and if tape and reel specifications embossed t ape and reel is used to facilitate automatic pick and place equipment feed requirements. the tape is used as the shipping container for various products and requires a minimum of handling. the antistatic/conductive tape provides a secure cavity for the product when sealed with the ?peel?back? cover tape. ? two reel sizes available (7 and 13 ) ? used for automatic pick and place feed systems ? minimizes product handling ? eia 481, ?1, ?2 ? sot?363 in 8 mm tape ? micro?8, qfn?32, pld?1, pld?1.5, ni?200s, ni?200z in 12 mm tape ? so?16/16l, tssop?16 in 16 mm tape ? so?20l, so?28l, to?270 in 24 mm tape ? ni?360, ni?360s, ni?400, ni?400s, ni?600 in 32 mm tape ? to?272, to?272 dual lead, to?272 split lead, to?272 split lead?straight lead version, to?272 straight lead, to?272 wide body multi lead and to?272 wide body multi lead gull wing in 44 mm tape ? ni?780, ni?780s, ni?880, ni?880s in 56 mm tape use the standard device title and add the required suffix as listed in the option table on the following page. note that the in dividual reels have a finite number of devices depending on the type of product contained in the tape. also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. micro?8 so?16/16l pfp?16 pld?1 pld?1.5 so?20l, so?28l ni?200s, ni?200z (12 mm) (24 mm) (12 mm) (12 mm) (12 mm) (16 mm) (16 mm) of feed direction tssop?16 (16 mm) drain lead pin 1 drain lead to?270 (24 mm) drain lead f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
8?3 tape and reel specifications motorola wireless rf product device data of feed direction ni?600 (32 mm) ni?360, ni?360s (32 mm) to?272, to?272 dual lead, to?272 split lead, to?272 split lead?straight lead version,to?272 straight lead (44 mm) ni?400, ni?400s (32 mm) ni?780, ni?780s (56 mm) ni?880, ni?880s (56 mm) drain lead drain lead drain lead drain lead drain lead drain lead to?272 wide body multi lead (44 mm) to?272 wide body multi lead gull wing (44 mm) drain lead drain lead f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
tape and reel specifications 8?4 motorola wireless rf product device data rf and if embossed tape and reel ordering information package tape width (mm) pitch mm (inch) reel size mm (inch) devices per reel and minimum order quantity device suffix micro?8 12 8.0 0.1 (.315 .003) 330 (13) 2,500 r2 ni?200s (458b) 12 12.0 0.1 (.471 .004) 178 (7) 500 r1 ni?200z (458c) 12 12.0 0.1 (.471 .004) 178 (7) 500 r1 ni?360 (360b) 32 24.0 0.1 (.945 .004) 330 (13) 500 r1 ni?360s (360c) 32 24.0 0.1 (.945 .004) 330 (13) 500 r1 ni?400 (465e) 32 32.0 0.1 (1.26 .004) 330 (13) 250 r3 ni?400s (465f) 32 32.0 0.1 (1.26 .004) 330 (13) 250 r3 ni?600 (465d) 32 32.0 0.1 (1.26 .004) 330 (13) 250 r3 ni?780 (465) 56 32.0 0.1 (1.26 .004) 330 (13) 250 r3 ni?780s (465a) 56 32.0 0.1 (1.26 .004) 330 (13) 250 r3 ni?880 (465b) 56 32.0 0.1 (1.26 .004) 330 (13) 250 r3 ni?880s (465c) 56 32.0 0.1 (1.26 .004) 330 (13) 250 r3 pld?1 12 8.0 0.1 (.315 .004) 178 (7) 1,000 t1 pld?1.5 12 8.0 0.1 (.315 .004) 178 (7) 1,000 t1 pfp?16 16 12.0 0.1 (.472 .004) 330 (13) 1,500 r2 qfn?24 12 8.0 0.1 (.315 .004) 178 (7) 2,500 r2 qfn?32 (5x5 mm) 12 8.0 0.1 (.315 .004) 178 (7) 2,500 r2 so?16/16l 16 8.0 0.1 (.315 .004) 330 (13) 2,500 r2 so?20l 24 12.0 0.1 (.472 .004) 330 (13) 1,000 r2 so?28l 24 12.0 0.1 (.472 .004) 330 (13) 1,000 r2 sot?363 8 4.0 0.1 (.157 .004) 178 (7) 3,000 t1 to?270 (1265) 24 16.0 0.1 (.631 .004) 330 (13) 500 r1 to?272 (1264), to?272 straight lead (1264a) 44 16.0 0.1 (.631 .004) 330 (13) 500 t1 to?272 split lead (1366), to?272 split lead?straight lead version (1366a) 44 20.0 0.1 (.787 .004) 330 (13) 500 t1 to?272 dual lead (1337) 44 16.0 0.1 (.631 .004) 330 (13) 500 r1 to?272 wide body multi lead (1329) 44 20.0 0.1 (.788 .004) 330 (13) 500 r1 to?272 wide body multi lead gull wing (1329a) 44 16.0 0.1 (.631 .004) 330 (13) 500 r1 tssop?16 16 8.0 0.1 (.315 .004) 330 (13) 2,500 r2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
8?5 tape and reel specifications motorola wireless rf product device data embossed tape and reel data for discretes carrier tape specifications         
         
   
       
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tape and reel specifications 8?6 motorola wireless rf product device data dimensions tape size b 1 max d d 1 e 1 f k p 0 p 2 r min t max w max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a!! &) /"  #"@ % @" ="< #"@/= =", % "/,/  #"/ % 2@< /,"1  #"/@@ % @" = ="2< #"/= ="@ % ,"2< #"11 % ;7?1$:3 ,"= ="< #"21= =", % "@< #", % 2@= ="/< #"2= =" % 2"/< #"@ % ;7?$$:3 metric dimensions govern ? english are in parentheses for reference only. note 1: a 0 , b 0 , and k 0 are determined by component size. the clearance between the components and the cavity must be within .05 mm min. to .50 mm max ., note 1: the component cannot rotate more than 10 within the determined cavity. note 3: pitch information is contained in the embossed tape and reel ordering information on pg. 8?4. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
8?7 tape and reel specifications motorola wireless rf product device data embossed tape and reel data for discretes ' !! .  -( a "  - #"102 % "2  - #"@ % /"  "2  #"2 " % 2  - #"0@0 % 6   -    ) 7   -   ;  b size a max g t max 12 mm 330 mm (12.992 ) 12.4 mm + 2.0 mm, ?0.0 (.49 + .079 , ?0.00) 18.4 mm (.72 ) 16 mm 360 mm (14.173 ) 16.4 mm + 2.0 mm, ?0.0 (.646 + .078 , ?0.00) 22.4 mm (.882 ) 24 mm 360 mm (14.173 ) 24.4 mm + 2.0 mm, ?0.0 (.961 + .070 , ?0.00) 30.4 mm (1.197 ) 32 mm 360 mm (14.163 ) 32.4 mm + 2.0 mm, ?0.0 (1.276 + 0.79 , ?0.00) 38.4 mm (1.512 ) 44 mm 330 mm (12.992 ) 44.4 mm + 2.0 mm, ?0.0 (1.748 + 0.79 , ?0.00) 50.4 mm (1.984 ) 44 mm to?272 wide body multi lead 330 mm (12.992 ) 45.3 mm + 0.5 mm, ?0.0 (1.785 + 0.02 , ?0.00) 50.4 mm (1.984 ) 44 mm to?272 wide body multi lead gull wing 330 mm (12.992 ) 45.3 mm + 0.5 mm, ?0.0 (1.785 + 0.02 , ?0.00) 50.4 mm (1.984 ) 56 mm 330 mm (12.992 ) 56.4 mm + 2.0 mm, ?0.0 (2.220 + 0.79 , ?0.00) 62 mm (2.441 ) reel dimensions metric dimensions govern ? english are in parentheses for reference only f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
tape and reel specifications 8?8 motorola wireless rf product device data     c ! 7  /" #
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  c & 7  /" #' % 7  /"" -( 6 '!)   7  /"/"2  3  "2 7  /"/" "/ 7  /"/"2   ' 6 !!<a 7   figure 3. reel dimensions b f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9?1 case dimensions motorola wireless rf product device data packaging information chapter nine table of contents page case dimensions 9?2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . the packaging availability for each device type is indicated on the individual data sheets and in the selector guide. all of the outline dimensions for the packages are given in this section. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?2 motorola wireless rf product device data case dimensions   

    
 
      
          
      
         
    
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9?3 case dimensions motorola wireless rf product device data case dimensions (continued) case 301aw?02 issue b       
  
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case dimensions 9?4 motorola wireless rf product device data case dimensions (continued) case 301ay?01 issue o   
     
  

    
 
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9?5 case dimensions motorola wireless rf product device data case dimensions (continued) case 318m?01 issue o ??? ??? )&   a     
   
  

    
 
             

  
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case dimensions 9?6 motorola wireless rf product device data case dimensions (continued) case 360b?05 issue f ni?360 g e c 

    
 
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# $ #   #  ##  f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9?7 case dimensions motorola wireless rf product device data case dimensions (continued) case 360d?02 issue b g e n (lid) c 

    
 
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case dimensions 9?8 motorola wireless rf product device data case dimensions (continued) case 375d?04 issue c ni?1230   

    
 
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 n c e m  ,,, &  b b (flange) h f  ... &  r (lid) s (insulator)  --- &  4x a t  --- &  (insulator)  ... &  (lid) pin 5  --- &  4 case 375e?03 issue c ni?1230s d    l z 4x k 4x    
  
       
   
 
  
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9?9 case dimensions motorola wireless rf product device data case dimensions (continued) case 375f?04 issue d ni?650       
  
     
          
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case dimensions 9?10 motorola wireless rf product device data case dimensions (continued) case 375h?03 issue b ni?860s   

    
 
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9?11 case dimensions motorola wireless rf product device data case dimensions (continued) case 458b?03 issue d c f e h k 2x      
      

    
 
         
  
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case dimensions 9?12 motorola wireless rf product device data case dimensions (continued) case 458c?03 issue d c e k 2x      
      

    
 
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9?13 case dimensions motorola wireless rf product device data case dimensions (continued) case 465a?06 issue f ni?780s       
  
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case dimensions 9?14 motorola wireless rf product device data case dimensions (continued) case 465c?02 issue a       
  
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9?15 case dimensions motorola wireless rf product device data case dimensions (continued) case 465e?04 issue e ni?400   
      

    
 
          
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case dimensions 9?16 motorola wireless rf product device data case dimensions (continued) case 466?02 issue b pld?1.5       
  
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9?17 case dimensions motorola wireless rf product device data case dimensions (continued) ,  ( b a   
 
  
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case dimensions 9?18 motorola wireless rf product device data case dimensions (continued)      
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9?19 case dimensions motorola wireless rf product device data case dimensions (continued) case 714y?04 issue e    

    
 
      
        
    
  
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case dimensions 9?20 motorola wireless rf product device data case dimensions (continued) case 751b?05 issue j so?16       
  
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9?21 case dimensions motorola wireless rf product device data case dimensions (continued) a1 case 751f?05 issue f    ( b    &    & 

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case dimensions 9?22 motorola wireless rf product device data case dimensions (continued) case 978?03 issue b pfp?16   
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9?23 case dimensions motorola wireless rf product device data case dimensions (continued) case 1264?08 issue h to?272 ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ????   
       

    
 
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case dimensions 9?24 motorola wireless rf product device data case dimensions (continued) case 1264a?02 issue a to?272 straight lead ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ????   
      

    
 
              

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9?25 case dimensions motorola wireless rf product device data case dimensions (continued) case 1265?07 issue f  
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 to?270 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?26 motorola wireless rf product device data case dimensions (continued) case 1302?01 issue b     
    
  
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9?27 case dimensions motorola wireless rf product device data case dimensions (continued) case 1307?01 issue b n pin 1 index area exposed die attach pad 2.25 ) #   2.25 24x 0.30 g 1.0 1.00 0.05 4 b   2x 2x   a 4 (   , 0.5 0.25      & 24x 0.5    &    & m m view m?m     c 
 
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     (0.5) (0.24) detail m pin 1 identifier (1.227) 4 preferred corner configuration detail n (45 ) (0.25) 0.065 24x 4 5 (0.4) 0.24 detail n corner configuration option (0.18) 0.60 detail m preferred pin 1 backside identifier detail t detail t preferred pin 1 backside identifier (90 ) 2x 2x detail m pin 1 backside identifier option detail s detail s pin 1 backside identifier option (90 ) 0.1 min 1.95 0.18 0.3 1.95 0.8 0.75 0.00 0.015 (45 ) 0.24 0.60 0.39 0.31 0.1 0.0 2x 0.39 0.31 20x qfn?24 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?28 motorola wireless rf product device data case dimensions (continued) case 1308?02 issue c g m m      
   
      
  
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     n pin 1 index area exposed die attach pad 2.25 #   & 2.25 20x 0.30 4 b   2x 2x   a 4   & # 0.5      & 20x 0.75    &    & view m?m detail m pin 1 index 1.95 0.18 0.50 1.95 16x 1.0 1.00 0.05     c 
 
 5 detail g view rotated 90 clockwise (0.5) (0.24) 0.8 0.75 0.00 (1.19) 4 preferred corner configuration detail n (0.27) 4 detail n corner configuration option 0.60 0.60 detail m preferred backside pin 1 index detail t detail t preferred backside pin 1 index (90 ) 2x detail m backside pin 1 index option 0.065 20x (45 ) 0.015 2x 0.39 0.31 0.24 0.24 0.1 0.0 1.1 0.475 0.425 1.0 backside pin 1 index 0.25 0.15 r qfn?20 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9?29 case dimensions motorola wireless rf product device data case dimensions (continued) case 1311?02 issue d qfn?32, 5x5 mm n pin 1 index area exposed die attach pad 2.95  (   3.25 32x 0.18 g 5 b   2x 2x   a 5  , # ) 0.5      & 32x 0.5    &    & m m view m?m      
   
      
  
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 6 detail g view rotated 90 clockwise (0.5) (0.25) 0.8 0.75 0.00 2.95 3.25 0.30 0.3 (1.73) 4 preferred corner configuration detail n (0.25) 4 detail n corner configuration option 0.60 detail m preferred pin 1 backside index detail t detail t preferred pin 1 backside index (90 ) 2x detail m backside pin 1 index option 0.065 32x (45 ) 0.015 2x 0.39 0.31 0.24 0.1 0.0 1.6 0.475 0.425 1.5 backside pin 1 index 0.25 0.15 r 0.60 0.24 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?30 motorola wireless rf product device data case dimensions (continued) & case 1329?08 issue h   
      

    
 
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// a2 7  & $& f to?272 wide body multi lead f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9?31 case dimensions motorola wireless rf product device data case dimensions (continued) & case 1329a?02 issue a   
      

    
 
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# ))) $%$ )))  $   #    #      %    # %   #     #     #  % % . $ $% $ # !!! &  #&   & &  $&    # %# b b3 a e1 e d 4x b1 d1 e 10x b pin one index 6x e1 4x e2 b2 ,,,  ,,,  ,,,  ,,,  ,,,  m n view y?y &  %& 2x e3      l1 l a1 gage plane t detail y 1  %  % %   $      # & & a2 c h c1 a detail y seating plane %& #& note 6 2x r1 & to?272 wide body multi lead gull wing f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?32 motorola wireless rf product device data case dimensions (continued)   
      

    
 
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// 7 & ,,,  ,,,  2x   $&  c1 2 drain id gate lead to?272 dual lead f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9?33 case dimensions motorola wireless rf product device data case dimensions (continued) case 1345?01 issue a qfn?12 laser mark for pin 1 identification in this area g 1.0 1.00 0.05 3 b   2x 2x   a 3 m m     c 
 
 5 detail g view rotated 90 clockwise     
   
  

    
 
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       (0.5) (0.24) pin 1 backside identifier detail m detail s detail s pin 1 backside identifier (90 ) 2x 2x 4 corner configuration detail n (0.18) n exposed die attach pad &    0.95 8x 0.5 ) , #      & 12x 0.75    & view m?m detail m pin 1 identifier 1.25 0.95 1.25    & 0.5 12x 0.3 0.18 (1.177) (45 ) 0.065 0.015 (r0.09) 3x 4x 8x 4x 12x 0.8 0.75 0.00 0.39 0.31 0.1 0.0 8x (0.777) 4x (0.25) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?34 motorola wireless rf product device data case dimensions (continued) case 1366?03 issue b   
       

    
 
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       % $  $  $   #   $  # ##  $  $ $ $ #  #%  %%     $$ # $% %  #  #% #   $  $ !!! 1 2 3 5 6 7 &    $&   4x b1  $# # # % %& #&  %  & & $     $%& &  #& & h  
 ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? 4 2 1 6 5 7 view y?y 3 8 ---  e2 d2  drain id & 4 8 & 2x e1 4x 2x b3 (b1)     
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9?35 case dimensions motorola wireless rf product device data case dimensions (continued) case 1366a?02 issue a to?272 split lead ? straight lead version   
      

    
 
                

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// 6 f a2     #  & $& b4 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?36 motorola wireless rf product device data case dimensions (continued) case 1383?02 issue a 7 b  a 7   
     
  

    
 
              a 0  1.01 0.1 0.5 0.05 0 3 0.05 bottom view &     0.7 0.05 2.37 0.05 0.5 0.05 0.5 0.05 0.8 0.05 1.2 0.05 2.9 0.97 2.4 3.15 2.4 1.65 1.03 2.8 2.4 2.55 0.07 1.02 1.77 2.52 3.15 2.2 0.3 0.7 2.24 3.15 2.215 0.5 0.05 sq 0.8 0.05 9x pin one ident 1 0.05 0.5 0.05 2.45 0.05 2.95 0.05 7x7 mm module f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9?37 case dimensions motorola wireless rf product device data case dimensions (continued) case 1404?01 issue o plastic sot?343r ??? ???   &  a     
   
  

    
 
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       1.15 0.15 1.3 view c b b 0.35 0.08 0.40 0.25 section b?b (see note 6) base metal with plating 3x 4x 2x 2 tips 0.35 b pin 1 identifier in this zone     1.0 0.1 1.1 max 4x 
 
 10 (0.425) c 
 
 0.46/0.26 view c 2.2 4 8 0 4x 10 4 0.10 0.20 0.25 0.25 0.0 0.8 0.25   &  0.65 0.5 2.0 0.65/0.55 (0.70/0.55 with plating)   &  1.35 1.15 2.1 1.9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
case dimensions 9?38 motorola wireless rf product device data case dimensions (continued) case 1440?01 issue o 9x12 mm module 12 b  c 9   
     
  

    
 
              a  1.6 0.1 0 8.23 0.05 3.962 bottom view &     1.78 2.709 1.143 1.143 2.692 3.962 1.435 5.451 4.639 3.343 2.048 0.752 0.543 1.864 3.159 5.471 4.537 3.242 0 0.111 0.66 0.05 sq 23x 12322 21 20 19 2 3 4 5 6 7 8 910 1112 13 14 15 16 17 18 1.143 0.152 2.438 3.734 2.438 3.734 2.565 0.05 2.362 0.05 2x 2x 2x 2x pin 1 index f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
10?1 applications and product literature motorola wireless rf product device data applications and product literature chapter ten table of contents page applications literature 10?2 . . . . . . . . . . . . . . . . . . . . . . . . . product literature 10?3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . motorola?s applications litera ture provides guidance to the ef fective use of its semiconductor families across a broad range of practical applications. many different topics are discussed in a way that is not possible in a device data sheet, from detailed circuit designs complete with pcb layouts, through matters to consider when embarki ng on a design, to complete overviews of product families and their design philosophies. information is presented in the form of application notes, article reprints and engineering bulletins. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications and product literature 10?2 motorola wireless rf product device data applications and product literature application notes, engineering bulletins and article reprints of special interest to designers of rf and rf/if equipment are listed below. this technical documentation is available on the motorola semiconductor product sector web site or is available through the motorola literature distribution center . phone and fax numbers for ordering literature are listed on the back cover of this book and in our accessing data on?line section. application notes an211a field effect transistors in theory and practice an419 uhf amplifier design using data sheet design curves an423 field effect transistor rf amplifier design techniques an535 phase?locked?loop design fundamentals an548a microstrip design techniques for uhf amplifiers an721 impedance matching networks applied to rf power transistors an923 800 mhz test fixture design an955 a cost effective vhf amplifier for land mobile radios an1022 mechanical and thermal considerations in using rf linear hybrid amplifiers an1024 rf linear hybrid amplifiers an1025 reliability considerations in design and use of rf integrated circuits an1026 extending the range of an intermodulation distortion test an1027 reliability/performance aspects of catv amplifier design an1032 how load vswr affects non?linear circuits an1033 match impedances in microwave amplifiers an1034 three balun designs for push?pull amplifiers an1040 mounting considerations for power semiconductors an1207 the mc145170 in basic hf and vhf oscillators an1253 an improved pll design method without ? n and an1277 offset reference plls for fine resolution or fast hopping an1526 rf power device impedances: practical considerations an1530 motorola advanced amplifier concept package an1539 an if communication circuit tutorial an1602 3.6 v and 4.8 v gsm/dcs1800 dual band pa application with dect capability using standard motorola rfic?s an1617 mounting recommendations for copper tungsten flanged transistors an1639 phase noise measurement using the phase lock technique an1643 rf ldmos power modules for gsm base station application: optimum biasing circuit an1670 60 watts, gsm 900 mhz, ldmos two?stage amplifier an1671 mc145170 pspice modeling kit an1673 solder reflow mounting method for the mrf286 and similar packages an1674 mounting method with mechanical fasteners for the mrf286 and similar packages an1696 broadband intermodulation performance development using the rohde & schwarz vector network analyzer zvr an1697 gsm900/dcs/1800 dual?band 3.6 v power amplifier solution with open loop control scheme an1907 surface mount solder attach method for the mrf9045mr1 in the to?270 plastic rf package an1908 solder mounting method for the mrf19090s and similar packages an1923 mounting method with mechanical fasteners for the mrf19090 and similar packages an1938 sensitivity of high power rf transistors to source and output loads an1941 modeling thermal effects in rf ldmos transistors an1944 generating temperature?dependent iv curves using ads an1946 interfacing motorola?s mc13190 2.4 ghz transceiver ic with hc08 family mcu?s an1949 mounting method for the mhvic910hr2 (pfp?16) and similar surface mount packages an1955 thermal measurement methodology of rf power amplifiers an4005 thermal management and mounting method for the pld 1.5 rf power surface mount package article reprints ar164 good rf construction practices and techniques ar254 phase?locked loop design articles ar510 vswr protection of solid state rf power amplifiers ar511 biasing solid state amplifiers to linear operation ar579 cad of a broadband, class?c 65 watt uhf power amplifier ar581 procedure performs thermal measurements on pulsed devices ar612 plastic packages hold power rf mosfets ar624 aluminum?based metallization enhances device reliability ar628 impedance measurements for high power rf transistors using the trl method ar629 digital predistortion techniques for rf power amplifiers with cdma applications f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
10?3 applications and product literature motorola wireless rf product device data engineering bulletins eb38 measuring the intermodulation distortion of linear amplifiers eb105 a 30 watt, 800 mhz amplifier design eb209 mounting method for rf power leadless surface mount transistors eb211 thermal management and solder mounting method for the mrf286, 60 watt power device in a cuw (copper tungsten) base package product literature DL110/d wireless rf product device data library dl209/d catv distribution amplifier module device data book sg46/d wireless rf product selector guide f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
applications and product literature 10?4 motorola wireless rf product device data f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
motorola and the stylized m logo are registered in the u.s. patent and trademark office. all other product or service names are the property of their respective owners. ? motorola, inc. 2003 how to reach us: usa/europe/locations not listed: motorola literature distribution p .o. box 5405, denver, colorado 80217 1-800-521-6274 or 480-768-2130 japan: motorola japan ltd.; sps, technical information center 3-20-1, minami-azabu. minato-ku, tokyo 106-8573, japan 81-3-3440-3569 asia/pacific: motorola semiconductors h.k. ltd. silicon harbour centre, 2 dai king street t ai po industrial estate, tai po, n.t. hong kong 852-26668334 home page: http://www.motorola.com/semiconductors DL110/d rev. 14 2/2003 information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?ypical?parameters can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?ypicals? must be validated for each customer application by customers technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .


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