? 1 ? CXG1177UR 16 pin uqfn (plastic) high power dp3t switch with logic control description this ic can be used in wireless communication systems, for example, w-cdma handsets. the ic has on-chip logic for operation with 2 cmos control inputs. the sony jphemt process is used for low insertion loss and on-chip logic circuit. features ? low insertion loss 2 cmos compatible control line small package size: 16-pin uqfn applications antenna switch for cellular handsets dual-band w-cdma structure gaas jphemt mmic absolute maximum ratings (ta = 25c) bias voltage v dd 7v control voltage vctl 5 v operating temperature topr ?35 to +85 c storage temperature tstg ?65 to +150 c gaas mmics are esd sensitive devices. special handling precautions are required. e04x43-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits.
? 2 ? CXG1177UR block diagram and recommended circuit when using this ic, the following external components should be used: c rf : this capacitor is used for rf decoupling and must be used for all applications. cbypass: this capacitor is used for dc line filtering. cbypass (100pf) f7 c rf ctlb gnd ctla v dd rf5 rf3 gnd3 gnd c rf c rf c rf rf4 rf1 gnd1 gnd2 gnd gnd rf2 gnd c rf f4 f6 f3 f5 f1 f2 5 4 3 1 2 9 10 12 11 7 6 8 16 14 15 13 truth table on state rf4 ? rf1 rf4 ? rf2 rf5 ? rf2 rf5 ? rf3 f1 on off off off f2 off on off off f3 off off on off f4 off off off on f5 off on on on f6 on off off on ctlb h l l h ctla l l h h state 1 2 3 4 f7 on on on off dc bias conditions (ta = 25c) item vctl (h) vctl (l) v dd unit v v v min. 2.0 0 2.6 ty p. 2.85 ? 2.85 max. 3.2 0.4 3.2
? 3 ? CXG1177UR electrical characteristics (ta = 25c) item insertion loss isolation vswr switching speed 1db compression input power aclr harmonics bias current control current unit db db db db db db db db db db db db db db db db db db db db ? s dbm dbc dbc dbc dbc a a ty p. 0.25 0.35 0.40 0.30 0.45 0.50 0.30 0.45 0.50 0.25 0.35 0.40 25 25 25 25 25 25 25 25 1.2 5 32 ?60 ?65 ?75 ?75 100 15 max. 0.45 0.60 0.65 0.50 0.70 0.75 0.50 0.70 0.75 0.45 0.60 0.65 10 ?50 ?55 ?60 ?60 270 25 min. 20 20 15 15 15 15 20 20 condition rf4 ? rf1, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf4 ? rf2, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf5 ? rf2, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf5 ? rf3, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf4 ? rf1, 830 to 885mhz 1920 to 2170mhz rf4 ? rf2, 830 to 885mhz 1920 to 2170mhz rf5 ? rf2, 830 to 885mhz 1920 to 2170mhz rf5 ? rf3, 830 to 885mhz 1920 to 2170mhz 50 ? v dd = 2.85v 5mhz, 3.84mhz bw ? 1 10mhz, 3.84mhz bw ? 1 ? 1 ? 1 v dd = 2.85v vctl (h) = 2.85v symbol il iso. vswr tsw p1db aclr1 aclr2 2fo 3fo i dd ictl state 1 2 3 4 ? 1 pin = 25dbm, 0/2.85v control, v dd = 2.85v, 830 to 840mhz, 1920 to 1980mhz
? 4 ? CXG1177UR sony corporation package outline unit: mm lead plating specifications item lead material copper alloy solder composition sn-bi bi:1-4wt% plating thickness 5-18 m spec. sony code eiaj code jedec code package material lead treatment lead material epoxy resin solder plating copper alloy package structure uqfn-16p-01 package mass terminal section note:cutting burr of lead are 0.05mm max. pin 1 index c 0.1 s a-b 0.18 0.05 m s c c a-b s 0.05 s max0.02 + 0.09 16pin uqfn plastic 0.25 ? 0.03 x 4 2.3 5 1 4 12 9 8 16 13 2.3 s 0.4 0.1 0.9 0.55 0.05 4-r0.2 a b solder plating 0.14 0.4 + 0.09 0.14 ? 0.03 0.26 0.07 0.25 0.01g
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