features 20dbm output power 18db gain description the P35-5127-000-200 is a high performance 22-34ghz gallium arsenide driver amplifier. this product is intended for use in fixed-point microwave systems and point to point microwave systems. the second and third stages have a common drain and gate connection the die is fabricated using moc's 0.20 m m gate length, phemt process and is fully protected using silicon nitride passivation for excellent performance and reliability. electrical performance ambient temperature 223 c, z o = 50 w , vd1/2 = 3v/5v, vg1 set for id1=38ma, vg2 set for id2=136ma u.o.s notes 1. all parameters measured on wafer hemt mmic driver amplifier, 22 - 34ghz P35-5127-000-200 marconi optical components parameter conditions min typ max units small signal gain 22 - 34ghz 15 18 - db input return loss 22 - 34ghz 7 12 - db output return loss 22 - 34ghz 7 12 - db p1db 22 - 34ghz 18 20 - dbm stage 1 drain current by adjustment of vg1 - 38 - ma stage 2 & 3 drain current by adjustment of vg2/3 - 136 - ma
typical rfow performance P35-5127-000-200
P35-5127-000-200 marconi optical components typical rfow performance typical s-parameters rfow frequency s11 s21 s12 s22 (ghz) mag angle mag angle mag angle mag angle 20 0.42 113.3 6.39 39 0.0013 113.3 0.40 -152.9 20.5 0.40 110.5 7.34 18 0.0014 126.6 0.34 -156 21 0.38 108.5 8.36 -4 0.0017 109 0.29 -157.2 21.5 0.37 106.1 9.31 -27.2 0.001 89.3 0.24 -156.7 22 0.36 102.6 10.12 -50.8 0.0008 77.1 0.20 -151.9 22.5 0.36 99.4 10.57 -74.4 0.0008 105.1 0.18 -142.3 23 0.35 95.5 10.68 -97.1 0.0008 119.1 0.18 -132.4 23.5 0.35 90.8 10.60 -119 0.0015 98.9 0.20 -128.7 24 0.35 85.2 10.37 -139.6 0.0017 114.4 0.21 -127.3 24.5 0.35 78.2 10.08 -159.4 0.0023 97 0.22 -128.8 25 0.34 71.6 9.77 -178.2 0.0025 88.6 0.22 -130.6 25.5 0.33 64.3 9.36 163.9 0.0026 78.5 0.22 -131.9 26 0.31 57.2 9.04 146.7 0.0027 71 0.22 -133.8 26.5 0.28 47.4 8.60 130.2 0.0029 53.7 0.21 -133.9 27 0.25 41.3 8.30 115.3 0.0031 37.2 0.21 -131.3 27.5 0.22 38.1 8.28 100.6 0.0022 26.1 0.22 -130.5 28 0.20 35.7 8.39 85.4 0.0015 0.6 0.25 -132.4 28.5 0.19 30.5 8.37 68.6 0.0013 3.9 0.25 -137.4 29 0.18 24.5 8.32 52.1 0.0012 28.9 0.25 -140.4 29.5 0.16 18.3 8.23 35.4 0.0012 11.4 0.26 -143.4 30 0.14 14.2 8.11 19.3 0.0009 35.7 0.26 -145.8 30.5 0.13 11.7 7.96 3.6 0.0009 0.2 0.26 -146.9 31 0.12 13.3 8.01 -11.5 0.001 26.2 0.28 -149 31.5 0.13 14 8.08 -27.4 0.0012 47.3 0.30 -151.3 32 0.12 14.9 8.22 -44.1 0.0019 38.4 0.32 -154.2 32.5 0.14 14.5 8.43 -61.3 0.0017 4.3 0.35 -159.8 33 0.16 9.5 8.57 -79.4 0.0012 3.2 0.37 -165.8 33.5 0.18 5.1 8.76 -98.1 0.0013 2.3 0.40 -171.5 34 0.21 -1.9 8.89 -117.8 0.0014 -3.5 0.42 -177.3
chip outline pad details pad function 1 rf input 2 vd1 3 vd2/3 4 n/c 5 rf output 6 n/c 7 vg2/3 8 vg1 die size: 2.36 x 0.94mm rf bond pads (1 & 5): 120 x 120 m m all other bond pads: 120 m m x 120 m m die thickness: 100 m m typical s-parameters rfow cont. frequency s11 s21 s12 s22 (ghz) mag angle mag angle mag angle mag angle 34.5 0.24 -10.9 9.10 -138.5 0.0019 -48.8 0.45 175.7 35 0.26 -19.4 9.16 -160.8 0.0003 -98.4 0.47 168.8 35.5 0.29 -26 9.12 175.6 0.0003 -137.9 0.49 162.9 36 0.34 -31.8 9.02 150.3 0.0009 90.2 0.53 156.5 P35-5127-000-200
P35-5127-000-200 marconi optical components handling and assembly information gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. dice are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. gaas products from moc's h40p foundry process are 100 m m thick and have through gaas vias to enable grounding to the circuit. windows in the surface passivation above the bond pads are provided to allow wire bonding to the die. the surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner. eutectic mounting should be used and entails the use of a gold-tin (ausn) preform, approximately 0.001? thick, placed between the die and the attachment surface. the preferred method of mounting is the use of a machine such as a mullins 8-140 die bonder. this utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure total wetting and avoid the formation of voids. dry nitrogen gas is directed across the work piece. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280c (note: gold germanium with a higher melting temperature should be avoided, in particular for mmics). the work station temperature should be 310c 10c. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. the strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing. the P35-5127-000-200 amplifier die has gold bond pads. the recommended wire bonding procedure uses 25 m m (0.001") 99.99% pure gold wire with 0.5-2% elongation. thermo-compression wedge bonding is preferred though thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. a work station temperature of 260c 10c with a wedge tip temperature of 120c 10c is recommended. the wedge force should be 45 5 grams. bonds should be made from the bond pads on the die to the package or substrate. the rf bond pads at the input and output are 120 m m x 120 m m; all other bond pads are 120 m m x 120 m m. the P35-5127-000-200 has been designed to include the inductance of two 25 m m bond wires at both the input and output, facilitating the integration of the die into a 50 w environment, these should be kept to a minimum length. operating and biasing of the P35-5127-000-200 the P35-5127-000-200 is a three-stage driver amplifier. the drain bias for the second and third stages (vd2 & vd3) are linked on chip; 3 volts should be connected to vd1 and 5v connected to vd2/3. the gate voltage (vg1) should be set to give 38ma in the first stage drain; the second and third stage gates are linked on chip and should be set to give 136ma in the second/third stage drain. dc bias supplies should be decoupled to ground using 100pf chip capacitors placed close to the chip with short bondwires to the amplifier bond pads.
the data and product specifications are subject to change without notice. these devices should not be used for device qualification and production without prior notice. ? marconi optical components ltd 2001 www.moc.marconi.com moc, caswell, towcester, northants, nn12 8eq, tel:+44 1327 356468 fax +44 1327 356698 462/sm/02708/200 issue 1 ordering information: P35-5127-000-200 absolute maximum ratings max vdd +7v max vgg -2v max channel temperature 150c storage temperature -65c to +150c typical bonding detail P35-5127-000-200
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