features over 22dbm output power @ 28ghz 10db gain from 25 to 30ghz small 2 x 1mm die size description the P35-5126-000-200 is a high performance 25-30ghz gallium arsenide driver amplifier. this product is intended for use in fixed-point microwave systems and satellite communications. the die is fabricated using moc's 0.20 m m gate length, power hemt process (h40p) and is fully protected using silicon nitride passivation for excellent performance and reliability. electrical performance ambient temperature 223 c, z o = 50 w , vdd = 4.v, vg1 set for id1=50ma, vg2 set for id2=90ma u.o.s notes 1. all parameters measured on wafer hemt mmic driver amplifier, 25 - 30ghz P35-5126-000-200 marconi optical components parameter conditions min typ max units small signal gain 25 - 30ghz 8 10 - db gain slope 25 - 30ghz - 0.5 - db input return loss 25 - 30ghz 4 10 - db output return loss 25 - 30ghz 10 12 - db output power at 1db gain compression 28ghz, vdd 5v 19 22 - dbm first stage current - - 50 - ma second stage current - - 90 - ma thermal resistance - - 130 - c/w
typical rfow performance (----- with bondwires) P35-5126-000-200
P35-5126-000-200 marconi optical components typical rfow performance
typical rfow performance P35-5126-000-200 typical s-parameters (rfow) frequency s11 s21 s12 s22 (ghz) mag angle mag angle mag angle mag angle 20.00 0.66 -49.9 2.78 162.6 0.003 76.5 0.13 -144.1 20.25 0.67 -53.3 2.87 151.5 0.003 71.8 0.14 -142.9 20.50 0.67 -56.9 2.95 140.8 0.003 67.1 0.15 -142.4 20.75 0.67 -60.5 3.02 130.3 0.003 53.2 0.15 -142.0 21.00 0.67 -64.5 3.09 119.9 0.003 48.3 0.16 -142.3 21.25 0.67 -68.6 3.14 109.7 0.003 41.1 0.17 -143.4 21.50 0.67 -72.6 3.17 99.8 0.003 30.4 0.18 -145.4 21.75 0.66 -76.6 3.21 90.2 0.003 29.1 0.19 -147.1 22.00 0.65 -80.7 3.25 80.7 0.004 20.7 0.19 -149.1 22.25 0.64 -84.8 3.28 71.2 0.003 14.7 0.20 -151.4 22.50 0.62 -88.7 3.31 61.8 0.003 6.8 0.20 -154.0 22.75 0.60 -92.8 3.33 52.4 0.003 -4.2 0.21 -156.5 23.00 0.58 -96.2 3.34 43.1 0.003 -12.2 0.21 -159.1 23.25 0.56 -99.8 3.36 33.9 0.003 -5.1 0.22 -161.6 23.50 0.54 -103.2 3.36 24.7 0.003 -18.2 0.22 -164.6 23.75 0.52 -106.4 3.37 15.6 0.003 -19.6 0.22 -167.1 24.00 0.49 -109.5 3.36 6.5 0.003 -30.2 0.22 -170.0 24.25 0.47 -112.4 3.35 -2.3 0.003 -37.5 0.22 -172.7 24.50 0.45 -114.9 3.34 -11.0 0.003 -45.2 0.22 -175.2 24.75 0.42 -117.6 3.33 -19.7 0.003 -47.9 0.22 -178.0 25.00 0.40 -119.9 3.32 -28.3 0.002 -47.7 0.22 179.2 25.25 0.37 -122.3 3.32 -37.0 0.003 -54.0 0.22 176.2 25.50 0.35 -124.3 3.31 -45.5 0.003 -73.0 0.22 173.3 25.75 0.32 -125.7 3.31 -54.0 0.003 -84.0 0.22 170.8 26.00 0.30 -127.1 3.32 -62.4 0.003 -87.6 0.22 168.3 26.25 0.28 -128.3 3.32 -70.8 0.003 -92.2 0.22 166.0 26.50 0.25 -129.2 3.34 -79.5 0.003 -104.2 0.22 163.2 26.75 0.23 -129.6 3.35 -88.2 0.004 -111.7 0.22 160.5 27.00 0.21 -129.7 3.38 -96.9 0.004 -123.0 0.21 158.1 27.25 0.19 -129.4 3.41 -105.6 0.004 -143.7 0.21 156.5
P35-5126-000-200 marconi optical components typical s-parameters (rfow) cont. chip outline frequency s11 s21 s12 s22 (ghz) mag angle mag angle mag angle mag angle 27.50 0.16 -128.4 3.45 -114.6 0.004 -151.9 0.21 154.6 27.75 0.13 -125.8 3.51 -123.9 0.004 -163.3 0.22 152.5 28.00 0.11 -119.5 3.57 -133.5 0.004 -172.5 0.22 149.8 28.25 0.08 -105.6 3.62 -143.4 0.004 -166.1 0.23 147.1 28.50 0.07 -79.5 3.69 -153.6 0.004 -177.9 0.23 144.9 28.75 0.09 -52.8 3.75 -164.5 0.005 172.6 0.24 141.6 29.00 0.12 -36.7 3.81 -175.9 0.004 153.8 0.25 137.2 29.25 0.16 -29.1 3.86 172.3 0.004 157.1 0.26 133.2 29.50 0.21 -27.2 3.89 159.8 0.005 151.4 0.27 129.4 29.75 0.27 -27.6 3.88 146.4 0.005 138.1 0.28 124.8 30.00 0.33 -30.6 3.82 132.4 0.005 121.4 0.29 119.9 30.25 0.40 -34.8 3.70 117.9 0.006 110.7 0.30 114.0 30.50 0.46 -40.0 3.51 103.2 0.006 103.9 0.32 107.5 30.75 0.52 -46.0 3.24 88.5 0.007 82.5 0.33 99.9 31.00 0.57 -52.2 2.94 74.5 0.006 74.7 0.33 92.9 31.25 0.61 -58.1 2.63 61.3 0.006 65.1 0.33 86.2 31.50 0.65 -63.6 2.33 48.9 0.005 52.4 0.33 80.0 31.75 0.67 -68.6 2.05 37.1 0.005 52.5 0.33 73.4 32.00 0.70 -73.3 1.79 26.1 0.004 39.2 0.32 67.8 die size: 2.05 x 1.14mm rf bond pads (1 & 2): 80 x 80 m m all other bond pads: 120 m m x 120 m m die thickness: 100 m m pad details pad function 1 rf input 2 rf output 3 gnd 4 vd2 5 n/c 6 vg2 7 vd1 8 n/c 9 vg1 10 gnd
P35-5126-000-200 handling and assembly information gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. dice are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. gaas products from moc's h40p foundry process are 100 m m thick and have through gaas vias to enable grounding to the circuit. windows in the surface passivation above the bond pads are provided to allow wire bonding to the die. the surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner. eutectic mounting should be used and entails the use of a gold-tin (ausn) preform, approximately 0.0012 thick, placed between the die and the attachment surface. the preferred method of mounting is the use of a machine such as a mullins 8-140 die bonder. this utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure total wetting and avoid the formation of voids. dry nitrogen gas is directed across the work piece. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280c (note: gold germanium with a higher melting temperature should be avoided, in particular for mmics). the work station temperature should be 310c 10c. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. the strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing. the P35-5126-000-200 amplifier die has gold bond pads. the recommended wire bonding procedure uses 25 m m (0.001") 99.99% pure gold wire with 0.5-2% elongation. thermo-compression wedge bonding is preferred though thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. a work station temperature of 260c 10c with a wedge tip temperature of 120c 10c is recommended. the wedge force should be 45 5 grams. bonds should be made from the bond pads on the die to the package or substrate. the rf bond pads at the input and output are 100 m m x 100 m m; all other bond pads are 120 m m x 120 m m. the P35-5126-000-200 has been designed to include the inductance of a single 0.2mm length of 25 m m bond wire at both the input and output, facilitating the integration of the die into a 50 w environment. operating and biasing of the P35-5126-000-200 the P35-5126-000-200 is a two-stage amplifier. the drain bias for both stages (vd1 & vd2) should be set to 4.0 volts. the gate voltages (vg1 & vg2) are typically set to -0.3v(50% idss) to give an id1 of 50ma and id2 of 90ma. the separate drain and gate voltage supplies for both stages can be combined into single supplies (vdd & vgg). dc bias supplies should be decoupled to ground using 100pf chip capacitors placed close to the chip with short bondwires to the amplifier bond pads.
P35-5126-000-200 marconi optical components typical bonding detail absolute maximum ratings max vdd +7v max vgg -2v max channel temperature 150c storage temperature -65c to +150c
the data and product specifications are subject to change without notice. these devices should not be used for device qualification and production without prior notice. ? marconi optical components ltd 2001 www.moc.marconi.com moc, caswell, towcester, northants, nn12 8eq, tel:+44 1327 356468 fax +44 1327 356698 462/sm/02580/200 iss 2 ordering information: P35-5126-000-200 P35-5126-000-200
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