north america: tel. (800) 366-2266, fax (800) 618-8883 asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 specifications subject to change without notice. visit www.macom.com for additional data sheets and product information. v 3.0 ordering information part number package am42-0002 ceramic bolt down package electrical specifications: t c = +25c, vdd = +9v, vgg = -5.0v, z 0 = 50 ?, ?, ?, ?, = == = frequency = 14.0-14.5 ghz parameter abbv. test conditions units min. typ. max. linear gain g l p in 0 dbm db 19 22 ? input vswr vswr in p in = 0 = dbm ? ? 2.5:1 2.7:1 output vswr vswr out ? ? ? 2.7:1 ? saturated output power p sat p in = +14 dbm dbm 30.5 31.5 ? output power @ p 1db dbm ? 29.5 ? output third order intercept ip 3 (refer to note 1) dbm ? 41 ? power added efficiency pae p in = +14 dbm % ? 22 ? bias currents i dd p in = +14 dbm ma ? 950 1400 thermal resistance jc 25c heat sink c/w ? 9.5 ? detector output voltage v det r l =10k ? = min. = v ? +3.5 ? cr-15 features ? high linear gain: 22 db typ. ? high saturated output power: +31.5 dbm typ. ? high power added efficiency: 22% typ. ? 50 ? = input/output broadband matched ? integrated output power detector ? high performance ceramic bolt down package description m/a-com?s am42-0002 is a three-stage mmic linear power amplifier in a ceramic bolt down style hermetic package. the am42-0002 employs a fully matched chip with interally decoupled gate and drain bias networks and an output power detector. the am42-0002 is designed to be operated from a constant voltage drain supply. the am42-0002 is designed for use as an output stage or a driver, in applications for vsat systems. this design is fully monolithic and requires a minimum of external components. m/a-com?s am42-0002 is fabricated using a mature 0.5 micron gaas mesfet process. the process features full passivation for increased performance and reliability. this product is 100% rf tested to ensure compliance to performance specifications. ceramic base plate 4x .06 x 45 chamfer 6 5 4 3 2 1 7 8 9 10 .010 sq. orientation tab 2x o .096 thru o.004 m a b c .090 max .33 .005 .002 .030 .318 .010 .328 .010 .050 min. 10 x .530 .70 .159 .010 .003 10 x .040 .100 4x .115 .010 .050 4x .085 - c - - b - - a - notes: (unless otherwise specified) 1. dimensions are in inches. 2. tolerance: .xxx = 0.005 .xx = 0.010 ip 3 is measured with two +21 dbm output tones @ 1 mhz spacing. am42-0002 gaas mmic vsat power amplifier 1.4w 14.0 - 14.5 ghz 1
north america: tel. (800) 366-2266, fax (800) 618-8883 asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 specifications subject to change without notice. visit www.macom.com for additional data sheets and product information. v 3.0 typical bias configuration 3,4,7,8 absolute maximum ratings 1,2,3,4 parameter absolute maximum v dd 12 volts v gg -10 volts power dissipation 13.2 w rf input power +23 dbm channel temperature 150c storage temperature -65c to +150c i ds 1900 ma 1. operation of this device outside any of these limits may cause permanent damage. 2. case temperature (t c ) = +25c. 3. nominal bias is obtained by first connecting -5 volts to pin 4 (v gg ), followed by connection +9 volts to pin 6 (v dd ). note sequence. 4. rf ground and thermal interface is the flange (case bottom). adequate heat sinking is required. 5. no dc bias voltage appears at the rf ports. 6. the dc resistance at the input port is an open circuit and at the ouput port is a short circuit. 7. for optimum ip 3 performance, the v dd bypass capacitors should be placed within 0.5 inches of pin 6. 8. resistor and capacitors surrounding the amplifier are suggestions and not included as part of the am42-0002. pin no. pin name description 1 gnd dc and rf ground 2 gnd dc and rf ground 3 in rf input 4 v gg gate supply 5 gnd dc and rf ground 6 v dd voltage drain supply 7 v det output power detector 8 out rf output 9 gnd dc and rf ground 10 gnd dc and rf ground v det f am42-0002 f 3.3 0.01 0.01 10 k ? 3 in out 8 7 6 v dd v gg gnd 1,2,5,9,10 4 f gaas mmic vsat power amplifier 1.4w, 14.0 - 14.5 ghz am42-0002 2
north america: tel. (800) 366-2266, fax (800) 618-8883 asia/pacific: tel.+81-44-844-8296, fax +81-44-844-8298 europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 specifications subject to change without notice. visit www.macom.com for additional data sheets and product information. v 3.0 typical performance @ +25c -5 12 -15 5 15 25 10 14 16 18 13 0 20 30 50 12 16 14 10 40 15 test conditions are listed in the section ?electrical specifications?. -15 12 -20 -10 -5 0 10 14 16 18 s11 s22 28 12 24 30 32 34 10 14 16 18 26 20 0 30 40 50 10 1 23 0 3 4 6 19 25 29 33 21 27 31 2 5 22 13 20 28 30 34 12 16 14 26 32 15 linear gain (db) return loss (db) output power (dbm) v det (v) pae (%) output power (dbm) frequency (ghz) frequency (ghz) input power (dbm) p out (dbm) frequency (ghz) frequency (ghz) linear gain vs. frequency input and output return loss vs. frequency output power & pae vs. input power @ 14.25 ghz detector voltage vs. output power @ 14.25 ghz output power vs. frequency @ p in = +14dbm power added efficiency vs. frequency @ p in =+14dbm gaas mmic vsat power amplifier 1.4w, 14.0 - 14.5 ghz am42-0002 3
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