central semiconductor corp. tm 164 CMFSH-3I dual isolated schottky diodes sot-143 case description the central semiconductor CMFSH-3I t ype is a silicon dual isolated schottky diode designed for surface mount fast switching applications requiring a low forward voltage drop. marking code is c 3 i . new maximum ratings (t a =25c) symbol units peak repetitive reverse voltage v rrm 30 v continuous forward current i f 100 ma peak repetitive forward current i frm 350 ma forward surge current, tp=10ms i fsm 750 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance q ja 357 c/w electrical characteristics per diode (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =25v 90 500 na i r v r =25v, t a =100c 25 100 m a b vr i r =100 m a 30 v v f i f =2.0ma 0.29 0.33 v v f i f =15ma 0.40 0.45 v v f i f =100ma 0.74 1.00 v c t v r =1.0v, f=1.0mhz 7.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 w 5.0 ns
r2 165 all dimensions in inches (mm). ? ? 0$;,080 lead code: 1) cathode 1 2) cathode 2 3) anode 2 4) anode 1 top view r1
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