application high speed power switching features ?low on?esistance low drive current high speed switching 4 v gate drive device can be driven from 5 v source suitable for dc ?dc converter, motor control table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss ?0 v drain current i d 45 a drain peak current i d * 180 a body?rain diode reverse drain current i dr 45 a channel dissipation pch** 35 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? 1 2 3 1 2 3 to?20cfm 1. gate 2. drain 3. source 2SK2206 silicon n channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 30 v i d = 10 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 250 ? v ds = 25 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.5 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) 0.011 0.015 ? i d = 25 a resistance v gs = 10 v * 0.016 0.022 ? i d = 25 a v gs = 4 v * forward transfer admittance |y fs | 2338 si d = 25 a v ds = 10 v * input capacitance ciss 3600 pf v ds = 10 v output capacitance coss 2000 pf v gs = 0 reverse transfer capacitance crss 400 pf f = 1 mhz turn?n delay time t d(on) 30 ns i d = 25 a rise time t r 230 ns v gs = 10 v turn?ff delay time t d(off) 435 ns r l = 1.2 ? fall time t f 360 ns body?rain diode forward v df 1.1 v i f = 45 a, v gs = 0 voltage body?rain diode reverse t rr 75 ns i f = 45 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test see characteristic curve of 2sk2204. 2SK2206
2SK2206 40 30 20 10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 3.57 ?/w, tc = 25 ? tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 500 200 100 20 50 10 2 5 1 0.5 0.5 1 2 5 10 20 50 1 ms pw = 10 ms (1shot) operation in this area is limited by r ds(on) dc operation (tc = 25?) 10 ? 100 ? ta = 25 ?
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