2N6661/vn88afd siliconix p-37655erev. b, 25-jul-94 1 n-channel enhancement-mode mosfet transistors product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) 2N6661 90 4 @ v gs = 10 v 0.8 to 2 0.9 vn88afd 80 4 @ v gs = 10 v 0.8 to 2.5 1.29 features benefits applications low on-resistance: 3.6 low threshold: 1.6 v low input capacitance: 35 pf fast switching speed: 6 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays 1 2 3 to-205ad (to-39) top view d g s to-220sd (tab-drain) front view sgd d g s n-channel mosfet 2N6661 vn88afd absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol 2N6661 vn88afd unit drain-source voltage v ds 90 80 v gate-source voltage v gs 20 30 v continuous drain current (t j = 150 c) t c = 25 c i d 0.9 1.29 continuous drain current (t j = 150 c) t c = 100 c i d 0.7 0.81 a pulsed drain current a i dm 3 3 power dissipation t c = 25 c p d 6.25 15 w power dissipation t c = 100 c p d 2.5 6 w maximum junction-to-ambient b r thja 170 c/w maximum junction-to-case r thjc 8.3 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. this parameter not registered with jedec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70224.
2N6661/vn88afd 2 siliconix p-37655erev. b, 25-jul-94 specifications a limits 2N6661 vn88afd parameter symbol test conditions typ b min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 125 90 80 v ds = v gs , i d = 1 ma 1.6 0.8 2 0.8 2.5 v gate-threshold voltage v gs(th) t c = 55 c 1.8 v t c = 125 c 1.3 gate body leakage i gss v ds = 0 v, v gs = 15 v 100 100 na gate - body leakage i gss t c = 125 c 500 500 na v ds = 90 v, v gs = 0 v 10 zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v 10 a zero gate voltage drain current i dss v ds = 0.8 x v (br)dss , v gs = 0 v 1 a t c = 125 c 500 500 on state drain current c i d( ) v ds = 15 v, v gs = 10 v 1.8 1.5 a on - state drain current c i d(on) v ds = 10 v, v gs = 10 v 1.8 1.5 a v gs = 5 v, i d = 0.3 a 3.8 5.3 5.6 drain-source on-resistance c r ds(on) v gs = 10 v, i d = 1 a 3.6 4 4 t c = 125 c e 6.7 9 8 forward transconductance c g fs v ds = 10 v, i d = 0.5 a 350 170 170 ms diode forward voltage v sd i s = 0.86 a, v gs = 0 v 0.9 v dynamic input capacitance c iss 35 50 50 output capacitance c oss v ds = 24 v, v gs = 0 v 15 40 40 pf reverse transfer capacitance c rss s gs f = 1 mhz 2 10 10 pf drain-source capacitance c ds 30 40 switching d turn-on time t on
25
6 10 15 ns turn-off time t off
8 10 15 ns notes a. t a = 25 c unless otherwise noted. vndq09 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature. e. this parameter not registered with jedec.
2N6661/vn88afd siliconix p-37655erev. b, 25-jul-94 3 typical characteristics (25 c unless otherwise noted) ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (a) i d drain current (ma) i d drain current (a) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) i d drain current (a) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) 1.0 0 1.0 2.0 3.0 4.0 5.0 0.8 0.6 0.4 0.2 0 6 v 5 v 4 v 3 v 2 v t j = 25 c v gs = 10 v 0.5 0.4 0.3 0 02 10 0.2 0.1 468 125 c v ds = 15 v t j = 55 c 10 8 6 0 0 0.5 2.5 4 2 1.0 1.5 2.0 v gs = 10 v t j = 25 c 100 0 0.4 0.8 1.2 1.6 2.0 80 60 40 20 0 2.8 v 2.6 v 2.4 v 2.2 v 2.0 v 1.8 v t j = 25 c v gs = 3 v 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v 7 048121620 6 5 4 0 3 2 1 i d = 0.1 a 0.5 a 1.0 a 25 c r ds(on) drain-source on-resistance (
2N6661/vn88afd 4 siliconix p-37655erev. b, 25-jul-94 typical characteristics (25 c unless otherwise noted) (cont'd) 0.1 10 k 1.0 0.01 0.1 1.0 100 10 1 k duty cycle = 0.5 0.2 0.1 single pulse threshold region capacitance normalized effective transient thermal impedance, junction-to-case (2N6661) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) i d drain current (a) v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) q g total gate charge (pc) drain current (ma) i d c capacitance (pf) gate-to-source voltage (v) v gs t switching time (ns) 1. duty cycle, d = 2. per unit base = r thjc = 20 c/w 3. t jm t c = p dm z thjc (t) t 1 t 2 t 1 notes: p dm t 2 125 100 75 0 010 50 50 25 20 30 40 c oss c iss c rss v gs = 0 v f = 1 mhz 10 1 0.01 0.5 0.1 1.0 1.5 2.0 25 c 55 c 125 c v gs = 5 v t j = 150 c 15.0 12.5 10.0 0 0 100 500 7.5 5.0 200 300 400 2.5 i d = 1.0 a v ds = 45 v 72 v 0.1 1 2 100 10 1 v dd = 25 v r l = 23 v gs = 0 to 10 v i d = 1.0 a t d(on) t d(off) t r t f 0.05 0.02 0.01
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