? 2000 ixys all rights reserved d5 - 41 v rsm v rrm type v v 440 400 dsei 2x 30-04c dsei 2x 31-04c 640 600 dsei 2x 30-06c dsei 2x 31-06c symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 70 a i favm t c = 85 i frm t p < 10 i fsm t vj = 45 i 2 t t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 50 v rrm 7ma v f i f = 30 a; t vj = 150 v t0 for power-loss calculations only 1.01 v r t t vj = t vjm 7.1 m ? r thjc 1.25 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 100 a/ i rm v r = 350 v; i f = 30 a; -di f /dt = 240 a/ dsei 2x 30 i favm = 2x 30 a dsei 2x 31 v rrm = 400/600 v t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions dsei 2x 30 dsei 2x 31 features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 42 dsei 2x 30, 400/600 v dsei 2x 31, 400/600 v fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
? 2000 ixys all rights reserved d5 - 43 v rsm v rrm type v v 1000 1000 dsei 2x 30-10b dsei 2x 31-10b symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 70 a i favm t c = 50 i frm t p < 10 i fsm t vj = 45 i 2 t t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 250 v rrm 7ma v f i f = 30 a; t vj = 150 v t0 for power-loss calculations only 1.5 v r t t vj = t vjm 12.5 m ? r thjc 1.25 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 100 a/ i rm v r = 540 v; i f = 30 a; -di f /dt = 240 a/ dsei 2x 30 i favm = 2x 30 a dsei 2x 31 v rrm = 1000 v t rr = 35 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions dsei 2x30 dsei 2x31 features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 44 dsei 2x 30, 1000 v dsei 2x 31, 1000 v fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
? 2000 ixys all rights reserved d5 - 45 v rsm v rrm type v v 1200 1200 dsei 2x 30-12b dsei 2x 31-12b symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 70 a i favm t c = 50 i frm t p < 10 i fsm t vj = 45 i 2 t t vj = 45 t vj -40...+150 t vjm 150 t stg -40...+150 p tot t c = 25 v isol 50/60 hz, rms 2500 v~ i isol m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25 v rrm 0.25 ma t vj = 125 v rrm 7ma v f i f = 30 a; t vj = 150 v t0 for power-loss calculations only 1.65 v r t t vj = t vjm 18.2 m ? r thjc 1.25 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 100 a/ i rm v r = 540 v; i f = 30 a; -di f /dt = 240 a/ dsei 2x 30 i favm = 2x 28 a dsei 2x 31 v rrm = 1200 v t rr = 40 ns i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features international standard package minibloc (isotop compatible) isolation voltage 2500 v~ 2 independent fred in 1 package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour applications antiparallel diode for high frequency switching devices anti saturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating and melting uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses operating at lower temperature or space saving by reduced cooling dsei 2x 30 dsei 2x 31 fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved d5 - 46 dsei 2x 30, 1200 v dsei 2x 31, 1200 v fig. 7 transient thermal impedance junction to case. 0 200 400 600 0 10 20 30 40 50 60 t vj =125c i f =30a di f /dt t fr v fr t fr ns 0 200 400 600 800 1000 1200 v v fr 0 200 400 600 0.0 0.2 0.4 0.6 0.8 1.0 -di f /dt t rr typ. max. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f q r i rm c t j 0 200 400 600 0 10 20 30 40 50 a max. typ. 1 10 100 1000 0 1 2 3 4 5 6 c i rm -di f /dt q r 01234 0 10 20 30 40 50 60 70 v v f i f t vj =150c t vj =100c t vj =25c a i f =15a i f =30a i f =60a i f =30a v r = 540v t vj =100c max. typ. i f =15a i f =30a i f =60a i f =30a t vj =100c v r = 540v v r =540v t vj =100c i f =15a i f =30a i f =60a i f =30a s a/s -di f /dt a/s a/s a/s fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied
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