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| geometry process details principal device types cxt3150 czt3150 gross die per 4 inch wafer 6,936 process cp315v power transistors npn - high current transistor chip process epitaxial planar die size 40 x 40 mils die thickness 7.1 mils base bonding pad area 7.9 x 8.7 mils emitter bonding pad area 9.0 x 14 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r2 (22-march 2010)
process cp315v typical electrical characteristics www.centralsemi.com r2 (22-march 2010) |
Price & Availability of CP315V10
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