ccd linear image sensors back-thinned ccd image sensors with electronic shutter function www.hamamatsu.com s11155-2048 S11156-2048 1 the s11155-2048 and S11156-2048 are back-thinned ccd linear image sensors with an internal electronic shutter for spec- trometers. these image sensors use a resistive gate structure that al lows high-speed transfer. each pixel has a lengthwise size needed by spectrometers but ensures readout with low image lag. features applications built-in electronic shutter high sensitivity from the ultraviolet region (spectral response range: 200 to 1100 nm) minimum integration time: 30 s readout speed: 10 mhz max. image lag: 0.1% typ. spectrometers image readout general ratings parameter s11155-2048 S11156-2048 pixel size 14 (h) 500 (v) m 14 (h) 1000 (v) m number of total pixels 2068 (h) 1 (v) number of active pixels 2048 (h) 1 (v) active area 28.672 (h) 0.500 (v) mm 28.672 (h) 1.000 (v) mm horizontal clock phase 2-phase output circuit two-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outline) window * 1 quartz glass * 1: temporary window type (ex. s11155-2048n) is available upon request. resistive gate structure in ordinary ccds, one pixel contains multiple electrodes and a signal charge is transferred by applying different clock pulses to those elec- trodes [figure 1]. in resistive gate structures, a single high-resistance electrode is formed in the active area, and a signal charge is trans- ferred by means of a potential slope that is created by applying different voltages across the electrode [figure 2]. compared to a ccd area image sensor which is used as a linear sensor by line binning, a one-dimensional ccd having a resistive gate structure in the active area offers higher speed transfer, allowing readout with low image lag even if the pixel height is large. [figure 1] schematic diagram and potential of ordinary 2-phase ccd [figure 2] schematic diagram and potential of resistive gate structure p1v p2v p1v p2v nn p nn - n - n - n - n n n - p + n p regl regh stg tg potential slope resistive gate kmpdc0320ea kmpdc0321eb
ccd linear image sensors s11155-2048, S11156-2048 2 absolute maximum ratings (ta=25 c) operating conditions (ta=25 c) parameter symbol min. typ. max. unit operating temperature * 2 * 3 topr -50 - +50 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v vret voltage vret -0.5 - +18 v ard voltage v ard -0.5 - +18 v ish voltage v ish -0.5 - +18 v arg voltage v arg -10 - +15 v stg voltage v stg -10 - +15 v igh vol tage v ig1h , v ig2h -10 - +15 v sg voltage v sg -10 - +15 v og voltage v og -10 - +15 v rg voltage v rg -10 - +15 v tg voltage v tg -10 - +15 v resistive gate voltage high v regh -10 - +15 v low v regl horizontal clock voltage v p1h , v p2h -10 - +15 v * 2: chip temperature * 3 : the chip temperature may increase due to heating in high-spe ed operation. we recommend taking measures to dissipate heat as needed. for more details, refer to the technical information. parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 18 v reset drain voltage v rd 14 15 16 v all reset drain voltage v ard 11 12 13 v all reset gate voltage high * 4 v argh 789 v low * 5 v argl -2 -1.5 -1 output gate voltage v og 4.5 5 5.5 v storage gate voltage v stg -0- v substrate voltage v ss -0- v resistive gate high voltage high v reghh -3.5 -3 -2.5 v low v reghl -9 -8 -7 resistive gate low voltage high v reglh - v reghh - 2.5 - v low v regll -9 -8 -7 output ampli er return voltage vret - 1 2 v test point horizontal input source v ish - v rd -v horizontal input gate v ig1h , v ig2h -9 -8 - v horizontal shift register clock voltage high v p1hh , v p2hh 567 v low v p1hl , v p2hl -6 -5 -4 summing gate voltage high v sgh 567 v low v sgl -6 -5 -4 reset gate voltage high v rgh 789 v low v rgl -6 -5 -4 transfer gate voltage high v tgh 8.5 9 9.5 v low v tgl -7.5 -7 -6.5 external load resistance r l 2.0 2.2 2.4 k * 4: all reset on * 5: all reset off
ccd linear image sensors s11155-2048, S11156-2048 3 electrical characteristics (ta=25 c) electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit signal output frequency fc - 5 10 mhz line rate lr - 2 4 khz horizontal shift register capacitance c p1h , c p2h - 200 - pf all reset gate capacitance c arg - 100 - pf resistive gate capacitance s11155-2048 c reg - 1000 - pf S11156-2048 - 2000 - summing gate capacitance c sg -10-pf reset gate capacitance c rg -10-pf transfer gate capacitance c tg - 100 - pf charge transfer ef ciency * 6 cte 0.99995 0.99999 - - dc output level vout 7 8 9 v output impedance zo - 300 - output ampli er return current iret - 0.4 - ma power consumption s11155-2048 p amp * 7 -75- mw p reg * 8 1.4 2.5 12.5 S11156-2048 p amp * 7 -75- p reg * 8 0.7 1.3 6.3 resistive gate resistance * 9 s11155-2048 r reg 0.5 2.5 4.5 k S11156-2048 1 5 9 * 6: charge transfer ef ciency per pixel of ccd shift register, measured at half of the full well capacity * 7: power consumption of the on-chip ampli er plus load resistance * 8: power consumption at reg * 9: resistance value between regh and regl parameter symbol s11155-2048 S11156-2048 unit min. typ. max. min. typ. max. saturation output voltage vsat - fw sv -- fw sv -v full well capacity fw - 200 - - 200 - ke - ccd node sensitivity sv 7 8 9 7 8 9 v/e - dark current * 10 non-mpp operation ds - 50 300 - 100 600 ke - /pixel/s mpp operation - 4 16 - 8 32 readout noise * 11 nr - 30 45 - 30 45 e - rms dynamic range * 12 dr - 6670 - - 6670 - - spectral response range - 200 to 1100 -- 200 to 1100 -nm photo response non-uniformity * 13, * 14 prnu - 3 10 - 3 10 % image lag * 13 l - 0.1 1 - 0.1 1 % * 10: dark current is reduced to half for every 5 to 7 c decrease in temperature. * 11: readout frequency is 2 mhz * 12: dynamic range (dr) = full well capacity / readout noise * 13: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 660 nm) fixed pattern noise (peak to peak) signal 100 [%] photo response non-uniformity = * 14:
ccd linear image sensors s11155-2048, S11156-2048 thinning 15 14 13 2 3 4 5 6 7 8 9 10 11 12 thinning 23 22 21 20 19 16 1 24 17 18 resistive gate storage section ccd horizontal shift register s2045 s2046 s2047 s2048 d5 d6 d7 d8 d9 d10 s1 s2 s3 s4 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 d1 d2 d3 d4 spectral response (without window) * 15 spectral transmittance characteristic of window material kmpdb0316ea kmpdb0303ea 4 * 15: spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. type no. window material s11155-2048 S11156-2048 quartz glass * 16 (option: window-less) * 16: resin sealing window material wavelength (nm) (typ. ta=25 c) quantum efficiency (%) 0 100 80 60 40 20 1200 200 400 600 800 1000 wavelength (nm) (typ. ta=25 c) transmittance (%) 0 100 80 90 70 50 30 10 60 40 20 1200 100 300 400 200 500 600 700 800 900 10001100 kmpdc0339eb device structure (conceptual drawing of top view in dimensional outline)
ccd linear image sensors s11155-2048, S11156-2048 5 timing chart kmpdc0340eb parameter symbol min. typ. max. unit arg pulse width tpwar 1 - - s rise and fall times tprar, tpfar 200 - - ns tg pulse width tpwv 30 - - s rise and fall time tprv, tpfv 20 - - ns p1h, p2h * 17 pulse width tpwh 50 100 - ns rise and fall time tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 50 100 - ns rise and fall time tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 5 15 - ns rise and fall time tprr, tpfr 5 - - ns tg - p1h overlap time tovr 1 2 - s integration time tinteg 30 - - s * 17: symmetrical clock pulses should be overlapped at 50% of maximum amplitude. 1 line output period tinteg (electronic shutter: open) tpwv tov r tpwh, tpws tpwr arg regh, regl tg p1h 1 d1 d2 d19 d20 d3..d10, s1...s2048, d11..d18 2 p2h sg rg os 3..2067 2068 tpwar (electronic shutter: closed) (regh: -3 v, regl: -5.5 v) non-mpp operation
ccd linear image sensors s11155-2048, S11156-2048 6 timing chart kmpdc0347ec parameter symbol min. typ. max. unit arg pulse width tpwar * 18 -- s rise and fall times tprar, tpfar 200 - - ns regh, regl pulse width tpwreg - tinteg - tpwv - s rise and fall times tprreg, tpfreg 100 - - ns tg pulse width tpwv 30 - - s rise and fall times tprv, tpfv 20 - - ns p1h, p2h * 19 pulse width tpwh 50 100 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 50 100 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 5 15 - ns rise and fall times tprr, tpfr 5 - - ns tg - p1h overlap time tovr 1 2 - s integration time tinteg 30 - - s * 18: the min. value of tpwar is equal to the normal readout period. * 19: symmetrical clock pulses should be overlapped at 50% of maximum amplitude. 1 line output period tinteg (electronic shutter: open) tpwv tov r tpwr arg regh, regl tg p1h 1 d1 d2 d19 d20 d3..d10, s1...s2048, d11..d18 2 p2h sg rg os 3..2067 2070... ? 2068 2069 tpwar (electronic shutter: closed) tpwreg (regh, regl=-8 v) normal readout period dummy readout period tpwh, tpws (regh=-3 v, regl=-5.5 v) mpp operation
ccd linear image sensors s11155-2048, S11156-2048 7 pin connections pin no. symbol function remark (standard operation) 1 os output transistor source r l =2.2 k 2 od output transistor drain +15 v 3 og output gate +5 v 4 sg summing gate same pulse as p2h 5 vret output ampli er return +1 v 6 rd reset drain +15 v 7 regl resistive gate (low) -5.5 v (non-mpp operation) 8 regh resistive gate (high) -3 v (non-mpp operation) 9 p2h ccd horizontal register clock-2 10 p1h ccd horizontal register clock-1 11 ig2h test point (horizontal input gate-2) -8 v 12 ig1h test point (horizontal input gate-1) -8 v 13 arg all reset gate 14 ard all reset drain +12 v 15 ish test point (horizontal input source) connect to rd 16 - 17 ss substrate gnd 18 rd reset drain +15 v 19 - 20 stg storage gate 0 v 21 - 22 - 23 tg transfer gate 24 rg reset gate kmpda0262eb dimensional outline (unit: mm) index mark active area 28.672 24 1 a 12 13 27.94 0.3 38.10 0.4 10.41 0.25 10.03 0.3 3.3 0.35 0.25 -0.03 +0.05 1.47 2.54 0.13 0.46 0.05 1.27 0.2 1.27 0.25 3.0 0.5 photosensitive surface 1.72 0.17 s11155-2048: a=0.500 S11156-2048: a=1.000 index mark
cat. no. kmpd1118e03 may 2010 dn ccd linear image sensors s11155-2048, S11156-2048 www.hamamatsu.com information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed in the specification sheets or supplied as samples may have a suffix ?(x)? which means tentativ e specifications or a suffix ?(z)? which means developmental specifications. ?2010 hamamatsu photonics k.k. hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 driver circuits for ccd linear image sensor (s11155-2048, S11156-2048) c11165 [sold separately] the c11165 is a driver circuit designed for hamamatsu ccd linear image sensors s11155-2048, S11156-2048. the c11165 can be used in spectrometer when combined with the ccd linear image sensor. features built-in 16-bit a/d converter interface of computer: usb 2.0 operates by dc+5 v 8 related information http://jp.hamamatsu.com/sp/ssd/ccd_e.html o characteristics and use of resistive gate type ccd linear image sensors with electronic shutter
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