? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?77 march 8, 2000-01 description the ild/q3 are optically coupled isolated pairs employing gaas infra- red leds and silicon npn phototransistor. signal information, including a dc level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. the ild/q3 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. also these couplers can be used to replace relays and transformers in many digi- tal interface applications such as crt modulation. the ild3 has two isolated channels in a single dip package and the ilq3 has four iso- lated channels per package. see appnote 45, ?ow to use optocoupler normalized curves . .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3 9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3 9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 emitter collector collector emitter emitter collector collector emitter anode cathode cathode anode anode cathode cathode anode 1 2 3 4 8 7 6 5 emitter collector collector emitter anode cathode cathode anode dimensions in inches (mm) dual channel quad channel features current transfer ratio at i f =1.6 ma, 300% min. high collector-emitter voltage ?v ceo =50 v field-effect stable by transparent ion shield (trios) double molded package offers isolation test voltage 5300 v rms , 1.0 sec. underwriters lab file #e52744 maximum ratings (each channel) emitter reverse voltage ...................................................6.0 v continuous forward current ............................. 60 ma surge current ...................................................... 2.5 a power dissipation............................................100 mw derate linearly from 25 c ...........................1.3 mw/ c detector collector-emitter reverse voltage.........................50 v collector current ............................................... 50 ma collector current (t<1.0 ms)............................ 400 ma total power dissipation ...................................200 mw derate linearly from 25 c ...........................2.6 mw/ c package isolation test voltage (between emitter and detector, refer to standard climate 23 c/50% rh, din50014) t=1 sec. ........ 5300 v rms creepage ...................................................... 7.0 mm clearance ...................................................... 7.0 mm isolation resistance v io =500 v, t a =25 c............................... r io =10 12 ? v io =500 v, t a =100 c............................. r io =10 11 ? power dissipation............................................250 mw derate linearly from 25 c ...........................3.3 mw/ c storage temperature range ................. 40 to +150 c operating temperature range.............. 40 to +100 c junction temperature.........................................100 c soldering temperature, 2.0 mm from case bottom...............................260 c dual channel ild3 quad channel ilq3 phototransistor optocoupler
? 2001 in neon technologies corp. optoelectronics division san jose, ca ild/q3 www.in neon.com/opto 1-888-in neon (1-888-463-4636) 2 178 march 8, 2000-01 characteristics emitter (ir gaas) symbol min. typ. max. unit test condition forward voltage v f 1.25 1.65 v i f =60 ma reverse current i r 0.01 10 a v r =6.0 v capacitance c 0 25 pf v r =0 v, f=1.0 mhz thermal resistance, junction to lead r thjl 750 k/w detector collector-emitter leakage current i ceo 5.0 70 na v ce =15 v capacitance c ce 6.8 pf v ce =5.0 v, f=1.0 mhz thermal resistance, junction to lead r thjl 500 k/w package transfer characteristics (each channel) saturated current transfer ratio, ild/q3-1 ctr sat 300 % i f =1.6 ma, v ce =0.4 v saturated current transfer ratio, ild/q3-2 ctr sat 100 % i f =1.0 ma, v ce =0.4 v common mode rejection output high cmh 5000 v/ sv cm =50 v p-p , r l =10 k ? , i f =0 ma common mode rejection output low cml 5000 v/ sv cm =50 v p-p , r l =10 k ? , i f =0 ma common mode coupling capacitance c cm 0.01 pf package capacitance c io 0.8 pf v io =0 v, f=1.0 mhz
|
