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technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage t vj = 25c v ces 1700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 150 a dc-collector current t c = 25 c i c 240 a periodischer kollektor spitzenstrom repetitive peak collctor current t p = 1 ms, t c = 80c i crm 300 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 1040 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 150 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 300 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t t.b.d k a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 3,4 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 150a, v ge = 15v, t vj = 25c v ce sat - 2,0 2,45 v collector-emitter saturation voltage i c = 150a, v ge = 15v, t vj = 125c - 2,4 - v gate-schwellenspannung gate threshold voltage i c = 6ma, v ce = v ge , t vj = 25c v ge(th) 5,2 5,8 6,4 v gateladung gate charge v ge = -15v ... +15v q g - 1,7 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -12-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,45 - nf v ce = 1700v, v ge = 0v, t vj = 25c - -5ma v ce = 1700v, v ge = 0v, t vj = 125c - - - ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: alfons wiesenthal date of publication: 2002-07-25 approved by: christoph lbke revision: 2.0 kollektor-emitter reststrom collector-emitter cut-off current i ces 1/8 db_fs150r17ke3g_2.0.xls
technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 150a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 9,1 , t vj = 25c t d,on - 0,20 - s v ge = 15v, r g = 9,1 , t vj = 125c - 0,22 - s anstiegszeit (induktive last) i c = 150a, v ce = 900v rise time (inductive load) v ge = 15v, r g = 9,1 , t vj = 25c t r - 0,10 - s v ge = 15v, r g = 9,1 , t vj = 125c - 0,10 - s abschaltverz?gerungszeit (ind. last) i c = 150a, v ce = 900v turn off delay time (inductive load) v ge = 15v, r g = 9,1 , t vj = 25c t d,off - 0,72 - s v ge = 15v, r g = 9,1 , t vj = 125c - 0,88 - s fallzeit (induktive last) i c = 150a, v ce = 900v fall time (inductive load) v ge = 15v, r g = 9,1 , t vj = 25c t f - 0,10 - s v ge = 15v, r g = 9,1 , t vj = 125c - 0,20 - s einschaltverlustenergie pro puls i c = 150a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 9,1 , t vj = 125c, l = 80nh e on -60-mj abschaltverlustenergie pro puls i c = 150a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 9,1 , t vj = 125c, l = 80nh e off -50-mj kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =1000v, v cemax =v ces -l ce di/dt i sc - 560 - a modulinduktivit?t stray inductance module l ce - 20 - nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip pro zweig / per arm, t c = 25c r cc+ee - 1,1 - m charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 150a, v ge = 0v, t vj = 25c v f - 1,8 2,2 v forward voltage i f = 150a, v ge = 0v, t vj = 125c - 1,9 t.b.d. v rckstromspitze i f = 150a, - di f /dt = 2200a/s peak reverse recovery current v r = 900v, v ge = -15v, t vj = 25c i rm - 185 - a v r = 900v, v ge = -15v, t vj = 125c - 200 - a sperrverz?gerungsladung i f = 150a, - di f /dt = 2200a/s recovered charge v r = 900v, v ge = -15v, t vj = 25c q r -40-c v r = 900v, v ge = -15v, t vj = 125c -65-c abschaltenergie pro puls i f = 150a, - di f /dt = 2200a/s reverse recovery energy v r = 900v, v ge = -15v, t vj = 25c e rec -20-mj v r = 900v, v ge = -15v, t vj = 125c -35-mj 2/8 db_fs150r17ke3g_2.0.xls technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data charakteristische werte / characteristic values ntc - widerstand / ntc - thermistor min. typ. max. nennwiderstand rated resistance t c = 25c r 25 - 5 - k abweichung von r 100 devitation of r 100 t c = 100c; r 100 = 493 r/r -5 - 5 % verlustleistung power dissipation t c = 25c p 25 - - 20 mw b - wert b - value r2= r1 exp[b(1/t2 - 1/t1)] b 25/50 - 3375 - k thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,120 k/w thermal resistance, junction to case diode/diode, dc r thjc - - 0,210 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1 w/m*k / grease = 1 w/m*k r thck - 0,005 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj max - - 150 c betriebstemperatur operation temperature t vjop -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 14 mm luftstrecke clearance 10 mm cti comperative tracking index 225 anzugsdrehmoment f. mech. befestigung mounting torque anzugsdrehmoment f. elektr. anschlsse terminal connection torque gewicht weight g 916 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3 -6nm 3 -6nm anschlsse / terminals m6 schraube / screw m5 m m 3/8 db_fs150r17ke3g_2.0.xls technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data i c [a] v ce [v] i c [a] v ce [v] 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge=9v vge=11v vge=13v vge=15v vge=19v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4/8 db_fs150r17ke3g_2.0.xls technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data i c [a] v ge [v] i f [a] v f [v] 0 50 100 150 200 250 300 567891011 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5/8 db_fs150r17ke3g_2.0.xls technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data e [mj] i c [a] e [mj] r g [ ] 0 50 100 150 200 250 300 0 50 100 150 200 250 300 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge = 15v, r gon = r goff =9,1 , v ce = 900v, t vj = 125c 0 50 100 150 200 250 300 0 102030405060708090 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge = 15v, i c = 150a , v ce = 900v , t vj = 125c 6/8 db_fs150r17ke3g_2.0.xls technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 g vorl?ufige daten preliminary data i 1234 r i [k/kw] : igbt 30,54 45,13 34,85 9,479 i [s] : igbt 0,01565 0,03977 0,07521 1,443 r i [k/kw] : diode 71,17 78,97 50,01 9,856 i [s] : diode 0,02103 0,03011 0,08672 1,1583 sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g = 9,1 ohm, t vj = 125c 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 1600 1800 v ce [v] i c [a] ic,chip transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth:diode zth:igbt 7/8 db_fs150r17ke3g_2.0.xls technische information / technical information igbt-module igbt-modules fs 150 r17 ke3 vorl?ufige daten preliminary data 8/8 |
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