absolute maximum ratings parameter units i d @ v gs = -10v, t c = 25c continuous drain current -11 i d @ v gs = -10v, t c = 100c continuous drain current -7.0 i dm pulsed drain current ? -44 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? -11 a e ar repetitive avalanche energy ? 12.5 mj dv/dt p eak diode recovery dv/dt ? -5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 s) weight 2.6(typical) g pd - 91554e o c a 01/29/02 www.irf.com 1 smd-1 product summary part number r ds(on) i d irfn9240 0.51 ? -11a for footnotes refer to the last page hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state resis- tance combined with high transconductance. hexfet tran- sistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switch- ing power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. features: simple drive requirements ease of paralleling hermetically sealed electrically isolated surface mount dynamic dv/dt rating light-weight power mosfet surface mount(smd-1) irfn9240 jantx2n7237u jantxv2n7237u JANS2N7237U ref:mil-prf-19500/595 200v, p-channel hexfet ? mosfet technology
irfn9240 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction to case ? ? 1.0 r thj-pcb junction to pc board ? 4.0 ? soldered to a copper-clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -11 i sm pulse source current (body diode) ? ? ? -44 v sd diode forward voltage ? ? -4.6 v t j = 25c, i s = -11a, v gs = 0v ? t rr reverse recovery time ? ? 440 ns t j = 25c, i f = -11a, di/dt -100a/ s q rr reverse recovery charge ? ? 7.2 c v dd -30v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -200 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.2 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.51 v gs = -10v, i d = -7.0a ? resistance ? ? 0.52 v gs = -10v, i d = -11a ? v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 4.0 ? ? s ( ) v ds > -15v, i ds = -7.0a ? i dss zero gate voltage drain current ? ? -25 v ds = -160v, v gs = 0v ? ? -250 v ds = -160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs =20v q g total gate charge ? ? 60 v gs = -10v, id = -11a q gs gate-to-source charge ? ? 15 nc v ds = -100v q gd gate-to-drain (?miller?) charge ? ? 38 t d (on) turn-on delay time ? ? 35 v dd = -100v, i d = -11a, t r rise time ? ? 85 r g =9.1 ?, v gs = -10v t d (off) turn-off delay time ? ? 85 t f fall time ? ? 65 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1200 v gs = 0v, v ds = -25v c oss output capacitance ? 570 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 81 ? na ? nh ns a ? measured from the center of drain pad to center of source pad
www.irf.com 3 irfn9240 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
irfn9240 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 13a & b
www.irf.com 5 irfn9240 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f
irfn9240 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -10v -10v
www.irf.com 7 irfn9240 foot notes: ? i sd -11a, di/dt ? 150a/ s, v dd -200v, t j 150c, rg =7.5 ? ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd =-50v, starting t j = 25c, l = 8.3mh peak i l = -11a, v gs = -10v ? pulse width 300 s; duty cycle 2% case outline and dimensions ? smd-1 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 11/02 p ad assignments 1- drain 2- gate 3- source
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