features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?specially designed for low voltage dc/dc converters ?fast switching for high efficiency ?high temperature soldering in accordance with cecc802/reflow guaranteed ?high efficiency, optimized for pwm. maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol mosfet-1 mosfet-2 unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 20 continuous drain current t j = 150? (1) i d 5.8 7.8 pulsed drain current i dm 20 30 a continuous source current (diode conduction) (1) i s 1.7 1.7 maximum power dissipation (1) t a = 25? p d 22 w t a = 70? 1.3 1.3 operating junction and storage temperature range t j , t stg ?5 to 150 ? maximum junction-to-ambient (1) thermal resistance r ja 62.5 62.5 ?/w mechanical data case: so-8 molded plastic body terminals: leads solderable per mil-std-750, method 2026 mounting position: any weight: 0.5g packaging codes/options: 5b/2.5k per reel, 12.5k per carton GF2524 asymmetric n-channel enhancement-mode mosfet mosfet 1: v ds 30v r ds(on) 37m ? i d 5.8a mosfet 2: v ds 30v r ds(on) 18m ? i d 7.8a 6/1/00 s1 1 d1 8 d1 7 d2 6 d2 5 g1 2 s2 3 g2 4 q1 q2 0.245 (6.22) min. 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) 0.165 (4.19) 0.155 (3.94) 0.05 (1.27) 0.04 (1.02) mounting pad layout 5 1 4 0.244 (6.20) 0.228 (5.79) 8 0.157 (3.99) 0.150 (3.81) 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.009 (0.23) 0.004 (0.10) 0.197 (5.00) 0.189 (4.80) 0.069 (1.75) 0.053 (1.35) 0.019 (0.48) 0.010 (0.25) x 45 0 8 0.050(1.27) 0.016 (0.41) 0.009 (0.23) 0.007 (0.18) dimensions in inches and (millimeters) new product so-8
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250a q1, q2 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a q1, q2 1.0 3.0 v gate-body leakage i gss v ds = 0v, v gs = 20v q1, q2 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v q1, q2 1 a on-state drain current (2) i d(on) v ds 5v, v gs = 10v q1 20 a q2 30 v gs = 10v, i d = 5.8a q1 23.5 37 drain-source r ds(on) v gs = 10v, i d = 7.8a q2 15.5 18 m ? on-state resistance (2) v gs = 4.5v, i d = 4.7a q1 32.5 55 v gs = 4.5v, i d = 6.3a q2 20.5 28 forward transconductance (2) g fs v ds = 15v, i d = 5.8a q1 16 s v ds = 15v, i d = 7.8a q2 27 diode forward voltage v sd i s = 1.7a, v gs = 0v q1, q2 0.75 1.2 s dynamic total gate charge q g q1 q1 8.1 11 v ds = 15v, v gs = 5v q2 20 27 gate-source charge q gs i d = 5.8a q1 2.1 nc q2 q2 5.8 gate-drain charge q gd v ds = 15v, v gs = 5v q1 2.8 i d = 10a q2 6.3 turn-on delay time t d(on) q1 714 q2 10 20 rise time t r v dd = 15v, r l = 15 ? , q1 612 i d 1a, v gen = 10v, q2 10 20 ns turn-off delay time t d(off) r g = 6 ? q1 25 40 q2 51 77 fall time t f q1 816 q2 21 35 input capacitance c iss q1 840 q2 1885 output capacitance c oss v ds = 15v, v gs = 0v q1 150 pf f = 1.0 mhz q2 325 reverse transfer capacitance c rss q1 80 q2 180 notes: (1) surface mounted on fr4 board, t 10 sec. (2) pulse test; pulse width 300 s, duty cycle 2% g d s v in v dd v gs r gen r l v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms GF2524 asymmetric n-channel enhancement-mode mosfet
GF2524 mosfet 1 asymmetric n-channel enhancement-mode mosfet 0 5 10 20 25 30 01 2 3 4 fig. 1 ?output characteristics 0.015 0.025 0.02 0.03 0.04 0.05 0.01 0.035 0.045 0 5 10 15 20 25 30 fig. 4 ?on-resistance vs. drain current 0 5 15 10 20 25 30 12345 fig. 2 ?transfer characteristics 15 2.5v 0.8 0.6 1.2 1.4 1.6 1 fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 5.8a -- 55 c 3.0v 10v fig. 3 ?threshold voltage vs. temperature i d = 250 a 0 0.04 0.08 0.06 0.02 0.12 0.1 246810 fig. 6 ?on-resistance vs. gate-to-source voltage i d = 5.8a i d -- drain-to-source current (a) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) v gs(th) -- gate-to-source threshold voltage (v) t j -- junction temperature ( c) r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) -- 50 -- 25 25 50 75 100 125 150 0 -- 50 -- 25 25 50 75 100 125 150 0 0.8 0.6 1.4 1.6 1.8 1 1.2 v gs = 10v 3.5v 4.5v v ds = 10v t j = 1 2 5 c v ds -- drain-to-source voltage (v) 4.0v 5.0v 6.0v 7.0v 25 c t j = 1 2 5 c v gs = 4.5v 5v 25 c ratings and characteristic curves (t a = 25 c unless otherwise noted)
GF2524 mosfet 1 asymmetric n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 35 36 38 39 40 41 37 fig. 10 breakdown voltage vs. junction temperature t j = 125 c i d = 250 a fig. 9 source-drain diode forward voltage v gs = 0v 0 2 4 6 8 10 024 8 6 fig. 7 gate charge 10 14 12 16 v ds = 15v i d = 5.8a 0 200 400 600 800 1000 1200 0 5 10 15 25 30 20 fig. 8 capacitance c iss c rss f = 1mh z v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) bv dss -- drain-to-source breakdown voltage (v) t j -- junction temperature ( c) q g -- total gate charge (nc) v gs -- gate-to-source voltage (v) c -- capacitance (pf) v ds -- drain-to-source voltage (v) -- 50 -- 25 25 50 75 100 125 0 150 -- 55 c c oss 25 c
GF2524 mosfet 2 asymmetric n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 5 10 20 25 30 01 2 3 4 fig. 1 output characteristics 0.012 0.014 0.016 0.02 0.01 0.018 0.022 0.024 0.026 0 5 10 15 20 25 30 fig. 4 on-resistance vs. drain current 0 5 15 10 20 25 30 12345 fig. 2 transfer characteristics 15 2.5v 0.8 0.6 1.2 1.4 1.6 1 fig. 5 on-resistance vs. junction temperature v gs = 10v i d = 7.8a -- 55 c v gs = 4.5v 3.0v 10v fig. 3 threshold voltage vs. temperature i d = 250 a 0 0.02 0.04 0.03 0.01 0.06 0.05 246810 fig. 6 on-resistance vs. gate-to-source voltage i d = 7.8a i d -- drain-to-source current (a) r ds(on) -- on-resistance ( ? ) i d -- drain current (a) i d -- drain current (a) v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) v gs(th) -- gate-to-source threshold voltage (v) t j -- junction temperature ( c) r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) t j = 1 2 5 c -- 50 -- 25 25 50 75 100 125 150 0 -- 50 -- 25 25 50 75 100 125 150 0 0.8 1.4 1.6 1.8 2 1 1.2 v gs = 10v 3.5v 4.5v v ds = 10v 25 c t j = 1 2 5 c 25 c v ds -- drain-to-source voltage (v) 4.0v 5.0v 6.0v
GF2524 mosfet 2 asymmetric n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 37 38 40 41 42 43 44 39 fig. 10 breakdown voltage vs. junction temperature t j = 125 c i d = 250 a fig. 9 source-drain diode forward voltage v gs = 0v 0 2 4 6 8 10 0 5 10 20 15 fig. 7 gate charge 25 35 30 40 v ds = 15v i d = 7.8a 0 500 1000 2000 1500 2500 0 5 10 15 25 30 20 fig. 8 capacitance c iss c rss f = 1mh z v gs = 0v i s -- source current (a) v sd -- source-to-drain voltage (v) bv dss -- drain-to-source breakdown voltage (v) t j -- junction temperature ( c) q g -- total gate charge (nc) v gs -- gate-to-source voltage (v) c -- capacitance (pf) v ds -- drain-to-source voltage (v) -- 50 -- 25 25 50 75 100 125 0 150 -- 55 c c oss 25 c
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