feb.1999 mitsubishi thyristor modules tm10t3b-m,-h medium power general use insulated type outline drawing & circuit diagram dimensions in mm application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers tm10t3b-m,-h ? i o dc output current ...................... 20a ? v rrm repetitive peak reverse voltage ........ 400/800v ? v drm repetitive peak off-state voltage ........ 400/800v ? 3 phase mix bridge ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 p r s t n 34 22 22 80 2 f 4.5 17 17 68 7.5 18.5 7 2 6 tab#110, t=0.5 tab#250, t=0.8 31 label t s r k gt gs gr n p k gr gs gt
feb.1999 unit a a a 2 s a/ m s w w v v a c c v nm kgcm g absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm10t3b-m,-h medium power general use insulated type m 400 480 320 400 480 320 h 800 960 640 800 960 640 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage conditions 3-phase fullwave rectified, tc=79 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =0.5a, t j =125 c charged part to case mounting screw m4 typical value ratings 20 200 1.7 10 2 50 5.0 0.5 10 5.0 2.0 C40~125 C40~125 2500 0.98~1.47 10~15 130 symbol i o i tsm , i fsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter dc output current surge (non-repetitive) current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm , v fm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current forward voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =i fm =20a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case (per 1/6 module) case to fin, conductive grease applied (per 1/6 module) measured with a 500v megohmmeter between main terminal and case min. 500 0.25 10 10 typ. max. 4.0 4.0 1.3 2.0 50 4.5 0.6 note: items of the above table applies to the thyristor part and the diode part as circled in the following tables.
feb.1999 current (a) 70 50 30 20 7 5 3 2 0 200 10 1 100 160 120 80 40 1 10 2 10 3 10 7 5 3 2 7 5 3 2 0.8 1.0 1.2 1.4 1.6 1.8 t j =125? mitsubishi thyristor modules tm10t3b-m,-h medium power general use insulated type maximum ratings item thyristor diode v rrm v rsm v r (dc) v drm v dsm v d (dc) i t (rms) i f (rms) i t (av) i f (av) i tsm i fsm i 2 t di/dt item thyristor diode p gm p g (av) v fgm i fgm t j t stg electrical characteristics item thyristor diode i rrm i drm dv/dt v gt v gd v tm v fm i gt r th (j-c) r th (c-f) performance curves maximum forward characteristic rated surge (non-repetitive) current surge (non-repetitive) current (a) conduction time (cycle at 60hz) forward voltage (v)
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 7 5 3 2 7 5 3 2 7 5 3 2 5.0 0 7 5 3 2 1.0 2.0 3.0 4.0 130 30 01020 5 40 15 50 60 70 80 90 100 110 120 q =30 60 90 120 80 0 01020 5 10 15 20 30 40 50 60 70 q =30 60 90 120 resistive, inductive load maximum transient thermal impedance (junction to case) (per single element) maximum power dissipation (three phase fullwave rectified) transient thermal impedance ( c/w) dc output current (a) limiting value of the dc output current (three phase fullwave rectified) dc output current (a) power dissipation (w) mitsubishi thyristor modules tm10t3b-m,-h medium power general use insulated type case temperature ( c) time (s)
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