www.siliconstandard.com 1 of 10 ss6563 versatile dc/dc converter features operates from 3v to 30v input voltage internal 2a peak current switch. continuous output current of 1.5a bootstrapped driver. high-side current sense capability. high efficiency (up to 90%). internal 2% reference. low quiescent current at 1.6ma. operating frequency from 100hz to 100khz. applications constant current source for battery chargers. saver for cellular phones. step-down dc/dc converter module. description the ss6563 is a monolithic control circuit that pr o vides the primary functions required for dc to dc converters and high-side - sensed co n stan t cu r rent source s . the device consists of an i n te r- nal te m per a ture compensated reference, co m- parator, co n trolled duty - cycle o s cillator with an a c tive cu r rent - sense circuit, bootstrapped driver, and hig h - cu r rent output switch. this device is specif i cally d e signed to construct a constant cu r- rent source for battery chargers with a min i mum nu m ber of exte r nal co m ponents. a b oo t strapped driver can drive the npn output switch to satur a- tion for higher eff i ciency an d less heat dissipation. the ss6563 can deliver 1.5a continuous cu rrent without requiring a heat sink. typical application circuit + c3 1 m f 470 m f + c 1 100 m f c2 1000pf r1 470 rb 3k r 3 2.2m rs 0.22 ra 1k r 2 390k d 1 1n5819 d3 d2 1n4148 l1 300 m h ss6563 8 7 6 5 4 3 2 1 b oo st f b g nd i s dc de cf v cc + c 4 5v/1a 8v~25v v in when v in >15v make r1=1k 1n4148 line regulation v in = 10v~20v @ i o =1a 40mv load regulation v in = 15v, @ i o =100ma~1a 20 mv short circuit current v in =15v, @ r l = 0.1 w 1.3a step-down converter re v . 2.02 4/06/2004
www.siliconstandard.com 2 of 10 ss6563 ordering information pin configuration example: ss6563cstr in so - 8 package shipped in tape and reel pdip-8, so-8 top view vcc b oo st de cf gnd is fb dc 1 3 4 2 8 6 5 7 ss6563-cxxx packing tr: tape and reel tb: tubes package type n: pdip-8 (only available in tubes) s: so-8 absolute maximum ratings supply voltage ..............................................................?????....................... ...... 30v comparator input voltage range ............................................????.......... - 0.3v~30v switch collector voltage ....................................................?????......................... 30v switch emitter voltage ......... .............................................?????......................... 30v switch collector to emitter voltage ..................................????............................. 30v driver collector voltage ........................................... .........?????.......................... 30v switch current ................................................??????......................................... 2a power dissipation and thermal characteristics dip package ta= 25 c ........................... .????................................ 1.0w thermal resistance .............????......................... 100 c/w so package ta= 25 c ......................?????............................... 625mw thermal resistance ...................???............. ......... 160 c/w operating junction temperature .....................................................???............. 125 c operating ambient temperature range .......................?????......................... 0~70 c storage temperature range ..... ..............................????.................... - 65 c ~ 150 c re v . 2.02 4/06/2004
www.siliconstandard.com 3 of 10 ss6563 test circuit b o o st ss6563 8 7 6 5 4 3 2 1 dc is de cf gnd fb vcc r 1 1 k c t 1nf 1a current source vcc 1.275v vcc 50ma current source 4.55v @vcc=5v 4.75v 2v/0v i dischg / i chg 1.225v electrical characteristics (v cc = 5v, t a =25c, unless otherwise specified.) parameter test conditions symbol min. typ. max. unit oscillat or charging current 5.0v vcc 30v i chg 10 25 40 m a discharge current 5.0v vcc 30v i dischg 100 150 200 m a voltage swing pin 3 v osc 0.6 v discharge to charge cu r- rent ratio v is =vcc i dischg / i chg 6.0 current limit sense vo l t age i chg =i dischg v cc ? v is 250 300 350 mv output switch saturation voltage, emitter follower connection i d e =1.0a; v boost =v dc = vcc v ce(sat) 1.5 1.8 v saturation voltage i dc =1.0a; i boost =50ma, (forced b@ 20) v ce (sat) 0.4 0.7 v dc current gain i sc =1.0a; v c e = 5 .0v h fe 35 120 collector off - state current v c e =30v i c(off) 10 na re v . 2.02 4 /06 /2004
www.siliconstandard.com 4 of 10 ss6563 electrical characteristics (v cc = 5v, t a =25c, unless otherwise specified.) parameter test conditions symbol min. typ. max. unit compara tor threshold voltage t a =25 c 0 c t a 70 c v fb 1.225 1.21 1.25 1.275 1.29 v v threshold voltage line regulation 3.0v vcc 30v reg line 0.1 0.3 mv/v input bias current v i n =0v i ib 0.4 1 m a supply current v is =vcc, pin 5>v fb 5.0v vcc 30v c t =1nf pin 2=gnd remaining pins open i cc 1.6 3 ma typical performance characteristics ct, oscillator timing capacitor ( nf) t o n -off , output switch on-off time ( m s) fig. 1 output switch on-off time v s . oscillator timing capacitor 0.1 1 10 100 1 10 100 1000 off-time on -time vcc=5v v is =vcc pin 5=gnd fig. 2 standby supply current v s . supply voltage vcc, supply voltage (v) i cc , supply current (ma) 0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 2 c t = 1nf v is = vcc pin 2 =gnd re v . 2.02 4 /06 /2004
www.siliconstandard.com 5 of 10 ss6563 typical performance characteristics (continued) v fb , threshold voltage (v) temperature ( c) fig. 3 v fb , threshold voltage vs . temperature 1.2 1.22 1.24 1.26 1.28 1.3 0 10 20 30 40 50 60 70 80 vcc = 5v, c t = 1nf, pin 2 = gnd v cc -v is threshold voltage ( m v) t emperature ( c) fig. 4 i s threshold voltage vs. temperature 250 260 270 280 290 300 0 10 20 30 40 50 60 70 80 vcc = 5v, c t = 1nf, pin 2 = gnd 310 320 330 340 350 fig. 5 emitter follower configuration output switch saturation voltage v s . emitter current i e , emitter current (a) 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v ce(sat) , saturation voltage (v) 0 0.5 1 1.5 vcc = 5v pin 1, 7, 8 = vcc pin 3, 5 = gnd fig. 6 common emitter configuration output switch saturation voltage vs . collector current i c , collector current (a) v ce(sat) , saturation voltage (v) 0 0.5 1 1.5 0 0.2 0.4 0.6 0.8 vcc = 5v pin 7 = vcc pin 2, 3, 5 = gnd forced beta = 20 block diagram q r s b oo st is vcc fb gnd cf dc de 8 7 6 5 4 3 2 1 q1 oscillator is ct comparator - + 1.25v reference voltage q2 80 re v . 2.02 4 /06 /2004
www.siliconstandard.com 6 of 10 ss6563 pin descriptions pin 1: dc - the collector of the switch - 2a. pin 2: de - darlington switch emitter. pin 3: cf - oscillator timing capacitor. pin 4: gnd - power ground. pin 5: fb - feedback comparator inverting i n put. pin 6: vcc - power supply input. pin 7: is - highside current sense input. vcc - v i s =300mv. pin 8: boost - bootstrapped driver collector. application information design formula table calculation step-down step-up t t on off v + v v - v - v out f in(min) sat out v + v v v - v out f in(min) in(min) sat - (t on + t off ) max 1 f min 1 f min c t 4x10 - 5 t on 4 x 10 - 5 t on i c (switch) 2 i out(max) 2 i out(max) ( ) t + t t on off off rs 0.3/i c(sw i tch) 0.3/ i c (switch) l(min) ( ) v - v - v i t in(min) sat out c(switch) on(max) ( ) v - v i t in(min) sat c(switch) on(max) co i ( t + t 8 v c ( switc h ) on off ripple ( p - p ) ) i t v out on ripple(p - p) v sat = saturation voltage of the output switch. v f = forward voltage of the ringback rectifier the following power supply charact eristics must be chosen: v in - nominal input voltage. v out - desired output voltage, v out = 1.25 (1 + rb/ra) i out - desired output current. f min - minimum desired switching frequency at s e lected values for v in and i ou t . v ripple ( p - p) - desired pea k - t o - peak output ripple vo l t age. in practice, the calculated value will need to be increased due to the c a pacitor equivalent series resistance and board l a y- out. the r i p ple voltage should be kept to a low value since it will d i rectly affect the line and loa d regulation. re v . 2.02 4 /06/2004
www.siliconstandard.com 7 of 10 ss6563 application examples peak 1 vbt 2 dis 3 vts 4 vcc 5 adj 6 sel3 7 tmr 8 mode 9 sel2 10 sel1 11 gnd 12 led1 13 led2 14 icon 15 dsw 16 u2 s s6781 r 8 30 0k r 9 91 k r10 100k + c9 4.7 m f c7 0.1 m f c10 47nf r15 680 r3 270 r2 20/5w sw1 pb sw r12 100k r 16 680 r17 680 r14 200k c8 0. 1 m f + c11 100 m f rx r11 100k ry c6 0.1 m f r13 470k q2 mmbt2222a r 6 50k led2 green led3 red led1 yellow q1 mps2222a + c4 220 m f c5 0 .1 m f + c12 1 m f + c13 10 m f r5 120/0.5w r1 1k bat1 ** battery r7 thermistor vin 11~15v l1 220 m h c2 1 m f c1 47 0p r s 0.3/1w 1 2 3 gnd 4 fb 5 vcc dc de cf 6 is 7 boost 8 u1 s s6563 + c3 220 m f r4 390k d3 in4148 d1 in4148 d2 in 5819 d4 1n5819 vin vout gnd u3 78l0 5 **3~5 nimh/nicd cells. note: charge current=0.3/rs ampere safety timer: 80min fig. 1 battery charger circuit for fluctuating charging current applications b oost is dc de cf g nd *rs v in l 220 m h d2 1n 4148 r b 33k d3 1n5819 1k c o c1 d1 1n5821 c3 1 m f ct 470pf ra 5.6k 220 m f + + ss6563 c5 10 m f + r1 *i o =300mv/rs i o r2 120 220 m f vcc fb ( % ) i o ( a ) 0 0 . 5 1 1 . 5 2 7 0 8 0 9 0 1 0 0 v i n = 16 v , v o = 8 v v i n = 16 v , v o = 12 v efficiency vs output current fig. 2 battery charge circuit re v . 2.02 4/06/2004
www.siliconstandard.com 8 of 10 ss6563 application examples (continued) 16v~25v + c 3 1 m f c 4 470 m f + c 1 100 m f c 2 4 70pf r b 1 3k r a 1 k r s 0 .22 d 1 1n5819 d 1 1 n5819 l1 300 m h ss6563 8 7 6 5 4 3 2 1 b oost f b g nd i s dc de cf v cc + 5 v 1 2v/1a v in fig. 3 step-down converter with external 5v bootstrap d 1 b oost ss6563 is 8 7 6 5 4 3 2 1 f b vcc l1 2 00 m h r b 4 7k ra 2 k2 c 1 c 0 c t 6 80pf r s 0 .22 v out v in 2 8v/ 200ma 1 n5819 100 m f 220 m f + + r 1 150 dc de gnd cf 8~16v line regulation v in = 8v~16v @ i o =200ma 100mv load regulation v in = 12v, @ i o =80ma~200ma 40m v fig. 4 step-up converter re v . 2.02 4 /06/2004
www.siliconstandard.com 9 of 10 ss6563 application examples (continued) b oost i s 8 7 6 5 4 3 2 1 f b v cc dc de cf gnd v out v in + + c 0 d 1 q 1 r 2 c t r b c 1 r s r 1 l r a fig. 5 step-up converter with external npn switch d 1 1 n5819 10 0 m h r a 8 .2k 9 53 rb c 1 c 0 c t r s 0 .26 8 7 6 5 4 3 2 1 cf g nd 10 0 m f v out - 12v/100ma v in 4.5v~6v 56 0 pf 470 m f + + l 1 dc de vcc fb boost is line regulation v in = 4.5v~6v @ i o =100ma 20mv load regulation v in = 5v, @ i o =10ma~100ma 100mv fig. 6 inverting converter ss6563 ss6563 re v . 2.02 4 /06/2004
in formation furnished by silicon standard corporation is believe d to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infri ngement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitat ion enhancement in reliability, functionality or design. no license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intelle ctual property rights of silicon standard corporation or any third parties. physical dimensions 8 lead plastic so (unit: mm) symbol min max a 1.35 1.75 a1 0.10 0.25 b 0.33 0.51 c 0.19 0.25 d 4.80 5.00 e 3.80 4.00 e 1.27(typ) h 5.80 6 .20 l 0.40 1.27 d h e a b a1 c e l 8 lead plastic dip (unit: mm) symbol min max a1 0.381 ? a2 2.92 4.96 b 0.35 0.56 c 0.20 0.36 d 9.01 10.16 e 7.62 8.26 e1 6.09 7.12 e 2.54 (typ) eb ? 10.92 b e l a2 a1 eb e c e1 d l 2.92 3.81 www.siliconstandard.com 10 of 10 ss6563 re v . 2.02 4/06/2004
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