parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -7.8 i d @ t a = 70c continuous drain current, v gs @ -4.5v -6.2 a i dm pulsed drain current ? -39 p d @t a = 25c power dissipation ? 2.0 p d @t a = 70c power dissipation ? 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c 2/5/01 www.irf.com 1 irf7325 hexfet ? power mosfet pd- 94094 absolute maximum ratings w symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 62.5 c/w thermal resistance v dss r ds(on) max (m w) w) w) w) w) i d -12v 24@v gs = -4.5v 7.8a 33@v gs = -2.5v 6.2a 49@v gs = -1.8v 3.9a so-8 d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 description l trench technology l ultra low on-resistance l dual p-channel mosfet l low profile (<1.8mm) l available in tape & reel new p-channel hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering techniques.
irf7325 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.0a, v gs = 0v ? t rr reverse recovery time CCC 36 54 ns t j = 25c, i f = -2.0a q rr reverse recovery charge CCC 28 42 nc di/dt = -100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC -39 -2.0 a electrical characteristics @ t j = 25c (unless otherwise specified) notes: ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 400s; duty cycle 2%. s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.007 CCC v/c reference to 25c, i d = -1ma CCC CCC 24 v gs = -4.5v, i d = -7.8a ? CCC CCC 33 v gs = -2.5v, i d = -6.2a ? CCC CCC 49 v gs = -1.8v, i d = -3.9a ? v gs(th) gate threshold voltage -0.40 CCC -0.90 v v ds = v gs , i d = -250a g fs forward transconductance 17 CCC CCC s v ds = -10v, i d = -7.8a CCC CCC -1.0 v ds = -9.6v, v gs = 0v CCC CCC -25 v ds = -9.6v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -8.0v gate-to-source reverse leakage CCC CCC 100 v gs = 8.0v q g total gate charge CCC 22 33 i d = -7.8a q gs gate-to-source charge CCC 5.0 7.5 nc v ds = -6.0v q gd gate-to-drain ("miller") charge CCC 4.7 7.0 v gs = -4.5v t d(on) turn-on delay time CCC 9.4 CCC v dd = -6.0v t r rise time CCC 9.8 CCC i d = -1.0a t d(off) turn-off delay time CCC 240 CCC r d = 6.0 w t f fall time CCC 180 CCC v gs = -4.5v ? c iss input capacitance CCC 2020 CCC v gs = 0v c oss output capacitance CCC 520 CCC pf v ds = -10v c rss reverse transfer capacitance CCC 330 CCC ? = 1.0mhz i gss a m w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns ? when mounted on 1 inch square copper board.
irf7325 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -7.8a 0.1 1 10 100 0.1 1 10 20 s pulse width t = 25 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -1.2v 0.1 1 10 100 0.1 1 10 20 s pulse width t = 150 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -1.2v 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 v = -10v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7325 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -7.8a v = -6v ds v = -9.6v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
irf7325 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) -i , drain current (a) c d v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
irf7325 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 2.0 4.0 6.0 8.0 10.0 -v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 0.05 r ds(on) , drain-to -source on resistance ( w ) i d = -7.8a 2.0 4.0 6.0 8.0 10.0 -i d , drain current (a) 0 0.02 0.04 0.06 0.08 r ds (on) , drain-to-source on resistance ( w) v gs = -2.5v v gs = -1.8v v gs = -4.5v
irf7325 www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature fig 16. typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.6 0.8 1.0 -v gs(th) gate threshold voltage (v) i d = -250a 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 20 40 60 80 100 power (w)
irf7325 8 www.irf.com so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millime t ers [inches ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mol d prot rus ions not t o e xce ed 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s olde ring t o a s ubst rate. mol d prot rus ions not t o e xce ed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf7101 (mosfet ) internat ional rectifier logo f7101 yww xxxx part number lot code ww = week y = las t digit of t he ye ar dat e code (yww)
irf7325 www.irf.com 9 33 0.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conform s to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 2/01
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