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1 ? fn7000 el5128 dual v com amplifier & gamma reference buffer the el5128 integrates two v com amplifiers with a single gamma reference buffer. operating on supplies ranging from 5v to 15v, while consuming only 2.0ma, the el5128 has a bandwidth of 12mhz (-3db) and provides common mode input ability beyond the supply rails, as well as rail-to-rail output capability. this enables this amplifier to offer maximum dynamic range at any supply voltage. the el5128 also features fast slewing and settling times, as well as a high output drive capability of 30ma (sink and source). the el5128 is targeted at tft-lcd applications, including notebook panels, monitors, and lcd-tvs. it is available in the 10-pin msop package and is specified for operation over the -40c to +85c temperature range. pinout el5128iy (10-pin msop) top view features dual v com amplifier single gamma reference buffer 12mhz -3db bandwidth supply voltage = 4.5v to 16.5v low supply current = 2.0ma high slew rate = 10v/s unity-gain stable beyond the rails input capability rail-to-rail output swing ultra-small package applications tft-lcd drive circuits notebook displays lcd desktop monitors lcd-tvs ? 1 2 3 4 10 9 8 7 5 6 voutb vinb- vinb+ vs- voutc vouta vina- vina+ vs+ vinc -+ - + ordering information part number package tape & reel outline # el5128iy 10-pin msop - mdp0043 EL5128IY-T7 10-pin msop 7? mdp0043 el5128iy-t13 10-pin msop 13? mdp0043 data sheet november 22, 2002 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-elantec or 408-945-1323 | intersil (and design) is a registered trademark of intersil americas inc. elantec is a registered trademark of elantec semiconductor, inc. copyright ? intersil americas inc. 2002. all rights reserved
2 important note: all parameters having min/max specifications are guaranteed. typ values are for information purposes only. unle ss otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a absolute maximum ratings thermal information supply voltage between v s + and v s - . . . . . . . . . . . . . . . . . . . .+18v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . v s - - 0.5v, v s + 0.5v maximum continuous output current . . . . . . . . . . . . . . . . . . 30ma esd voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kv operating conditions operating temperature . . . . . . . . . . . . . . . . . . . . . . -40 o c to +85 o c maximum die temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+125 o c storage temperature . . . . . . . . . . . . . . . . . . . . . . . -65 o c to +150 o c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. electrical specifications v s + = +5v, v s - = -5v, r l = 10k ? and c l = 10pf to 0v, t a = 25c unless otherwise specified. parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 0v 2 12 mv tcv os average offset voltage drift a 5v/c i b input bias current v cm = 0v 2 50 na r in input impedance 1g ? c in input capacitance 1.35 pf cmir common-mode input range (v com amps) -5.5 +5.5 v cmrr common-mode rejection ratio (v com amps) for v in from -5.5v to +5.5v 50 70 db a vol open-loop gain -4.5v v out + 4.5v (v com amps) 75 95 db av voltage gain -4.5v v out + 4.5v 0.995 1.005 v/v output characteristics v ol output swing low i l = -5ma -4.92 -4.85 v v oh output swing high i l = 5ma 4.85 4.92 v i sc short circuit current 120 ma i out output current 30 ma power supply performance psrr power supply rejection ratio v s is moved from 2.25v to 7.75v 60 80 db i s supply current (per amplifier) no load 660 1000 a dynamic performance sr slew rate b -4.0v v out + 4.0v, 20% to 80% 10 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 500 ns bw -3db bandwidth r l = 10k ? , c l = 10pf 12 mhz gbwp gain-bandwidth product r l = 10k ? , c l = 10pf (v com amps) 8 mhz pm phase margin r l = 10k ? , c l = 10pf (v com amps) 50 cs channel separation f = 5mhz 75 db a.measured over operating temperature range b.slew rate is measured on rising and falling edges el5128
3 electrical specifications v s + = 5v, v s -= 0v, r l = 10k ? and c l = 10pf to 2.5v, t a = 25 c unless otherwise specified. parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 2.5v 2 10 mv tcv os average offset voltage drift a 5v/c i b input bias current v cm = 2.5v 2 50 na r in input impedance 1g ? c in input capacitance 1.35 pf cmir common-mode input range -0.5 +5.5 v cmrr common-mode rejection ratio for v in from -0.5v to +5.5v 45 66 db a vol open-loop gain 0.5v v out + 4.5v 75 95 db a v voltage gain 0.5v v out + 4.5v 0.995 1.005 v/v output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = +5ma 4.85 4.92 v i sc short circuit current 120 ma i out output current 30 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 660 1000 a dynamic performance sr slew rate b 1v v out 4v, 20% to 80% 10 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 500 ns bw -3db bandwidth r l = 10k ? , c l = 10pf 12 mhz gbwp gain-bandwidth product r l = 10 k ? , c l = 10pf 8 mhz pm phase margin r l = 10 k ? , c l = 10 pf 50 cs channel separation f = 5mhz 75 db a.measured over operating temperature range b.slew rate is measured on rising and falling edges el5128
4 electrical specifications v s + = 15v, v s - = 0v, r l = 10k ? and c l = 10pf to 7.5v, t a = 25 c unless otherwise specified. parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 7.5v 2 14 mv tcv os average offset voltage drift a 5v/c i b input bias current v cm = 7.5v 2 50 na r in input impedance 1g ? c in input capacitance 1.35 pf cmir common-mode input range -0.5 +15.5 v cmrr common-mode rejection ratio for v in from -0.5v to +15.5v 53 72 db a vol open-loop gain 0.5v v out 14.5v 75 95 db a v voltage gain 0.5v v out 14.5v 0.995 1.005 v/v output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = +5ma 14.85 14.92 v i sc short circuit current 120 ma i out output current 30 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 660 1000 a dynamic performance sr slew rate b 1v v out 14v, 20% to 80% 10 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 500 ns bw -3db bandwidth r l = 10k ? , c l = 10pf 12 mhz gbwp gain-bandwidth product r l = 10k ? , c l = 10pf 8 mhz pm phase margin r l = 10k ? , c l = 10 pf 50 cs channel separation f = 5mhz 75 db a.measured over operating temperature range b.slew rate is measured on rising and falling edges el5128
5 typical perfor mance curves input offset voltage distribution 400 1200 quantity (amplifiers) input offset voltage (mv) 0 -12 1800 1600 800 200 1400 1000 600 -10 -8 -6 -4 -2 -0 2 4 6 8 10 12 v s =5v t a =25c typical production distribution input offset voltage drift, tcv os (v/c) 1 3 5 7 9 11 13 15 17 19 21 10 50 quantity (amplifiers) 0 70 30 60 40 20 input offset voltage drift v s =5v typical production distribution input offset voltage vs temperature 0 150 0 5 input offset voltage (mv) temperature (c) -5 50 -50 100 10 v s =5v input bias current vs temperature 0.0 input bias current (na) temperature (c) -2.0 2.0 0 150 50 -50 100 v s =5v output high voltage vs temperature 4.94 4.95 output high voltage (v) 4.93 4.97 0 150 temperature (c) 50 -50 100 4.96 v s =5v i out =5ma output low voltage vs temperature -4.95 -4.93 output low voltage (v) -4.97 -4.91 0 150 temperature (c) 50 -50 100 -4.92 -4.94 -4.96 v s =5v i out =-5ma open-loop gain vs temperature 80 90 open-loop gain (db) 100 0 150 temperature (c) 50 -50 100 v s =5v r l =10k ? slew rate vs temperature 0 150 10.30 10.35 slew rate (v/s) temperature (c) 10.25 50 -50 100 10.40 v s =5v el5128
6 typical perfor mance curves supply current per amplifier vs supply voltage 520 400 600 supply current (a) supply voltage (v) 300 10 0 700 500 15 t a =25c supply current per amplifier vs temperature 0.5 0.55 supply current (ma) 0.45 0 150 temperature (c) 50 -50 100 v s =5v frequency response for various r l 1m 100m -5 0 magnitude (normalized) (db) frequency (hz) -15 10m 100k 5 -10 10k ? 1k ? 560 ? 150 ? open loop gain and phase vs frequency 10 10k 100m 50 200 frequency (hz) -50 gain (db) phase() 20 -130 -230 100 1k 100k 1m 10m 150 0 100 -30 -80 -180 v s =5v, t a =25c r l =10k ? to gnd c l =12pf to gnd phase gain c l =10pf a v =1 v s =5v 1m 100m frequency (hz) 10m 100k 0 10 magnitude (normalized) (db) -30 20 -20 -10 frequency response for various c l r l =10k ? a v =1 v s =5v closed loop output impedance vs frequency output impedance ( ? ) frequency (hz) 10k 100 0 40 80 120 200 1m 160 10m a v =1 v s =5v t a =25c maximum output swing vs frequency maximum output swing (v p-p ) frequency (hz) 10k 100 0 2 4 12 1m 6 10m v s =5v t a =25c a v =1 r l =10k ? c l =12pf distortion <1% 8 10 cmrr vs frequency 100 0 cmrr (db) frequency (hz) 80 60 40 20 1m 10m 10k 100k v s =5v t a =25c 1k 12pf 50pf 100pf 1000pf el5128
7 typical perfor mance curves psrr vs frequency 100 0 psrr (db) frequency (hz) 80 60 40 20 1m 10m 10k 100k v s =5v t a =25c 1k psrr+ psrr- input voltage noise spectral density vs frequency 100 100k 100m 10 100 voltage noise ( nv hz) frequency (hz) 1 10m 1k 10k 1m 600 v s =5v t a =25c a v =1 r l =10k ? c l =12pf large signal transient response 1k 10k 100k 0.005 0.008 total harmonic distortion + noise vs frequency frequency (hz) thd+ n (%) channel separation vs frequency response 1k -60 x-talk (db) frequency (hz) -140 -120 -100 -80 0.010 0.001 0.003 1m 6m 10k 100k v s =5v r l =10k ? a v =1 v in =220mv rms v s =5v r l =10k ? a v =1 v in =1v rms 0.006 0.009 0.007 0.004 0.002 10 100 1000 small-signal overshoot vs load capacitance load capacitance (pf) overshoot (%) v s =5v a v =1 r l =10k ? v in =50mv t a =25c 50 90 70 30 10 settling time vs step size 800 -2 2 step size (v) settling time (ns) 600 0 4 200 400 3 1 -3 0 -1 -4 v s =5v a v =1 r l =10k ? c l =12pf t a =25c v s =5v t a =25c a v =1 r l =10k ? c l =12pf small signal transient response measured channel a to b 0.1% 0.1% 1v 1s 50mv 200ns el5128
8 pin descriptions pin number pin name pin function equivalent circuit 1 vouta amplifier a output circuit 1 2 vina- amplifier a inverting input circuit 2 3 vina+ amplifier a non-inverting input (reference circuit 2) 4 vs+ positive power supply 5 vinc amplifier c (reference circuit 2) 6 voutc amplifier c output (reference circuit 2) 7 vs- negative power supply 8 vinb+ amplifier b non-inverting input (reference circuit 2) 9 vinb- amplifier b inverting input (reference circuit 2) 10 voutb amplifier b output (reference circuit 1) v s+ gnd v s- v s+ v s- el5128
9 applications information product description the el5128 voltage feedback amplifier/buffer combination is fabricated using a high voltage cmos process. it exhibits rail-to-rail input and output capability, it is unity gain stable, and has low power consumption (500a per amplifier). these features make the el5128 ideal for a wide range of general-purpose applications. connected in voltage follower mode and driving a load of 10k ? and 12pf, the el5128 has a -3db bandwidth of 12mhz while maintaining a 10v/s slew rate. operating voltage, input, and output the el5128 is specified with a single nominal supply voltage from 5v to 15v or a split supply with its total range from 5v to 15v. correct operation is guaranteed for a supply range of 4.5v to 16.5v. most el5128 specifications are stable over both the full supply range and operating temperatures of - 40c to +85c. parameter variations with operating voltage and/or temperature are shown in the typical performance curves. the input common-mode voltage range of the amplifiers extends 500mv beyond the supply rails. the output swings of the el5128 typically extend to within 80mv of positive and negative supply rails with load currents of 5ma. decreasing load currents will extend the output voltage range even closer to the supply rails. figure 1 shows the input and output waveforms for the device in the unity-gain configuration. operation is from 5v supply with a 10k ? load connected to gnd. the input is a 10v p-p sinusoid. the output voltage is approximately 9.985v p-p . figure 1. operation with rail-to-rail input and output short circuit current limit the el5128 will limit the short circuit current to 120ma if the output is directly shorted to the positive or the negative supply. if an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. maximum reliability is maintained if the output continuous current never exceeds 30ma. this limit is set by the design of the internal metal interconnects. output phase reversal the el5128 is immune to phase reversal as long as the input voltage is limited from (v s -) -0.5v to (v s +) +0.5v. figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. although the device's output will not change phase, the input's over- voltage should be avoided. if an input voltage exceeds supply voltage by more than 0.6v, electrostatic protection diodes placed in the input stage of the device begin to conduct and over-voltage damage could occur. figure 2. operation with beyond-the-rails input power dissipation with the high-output drive capability of the el5128 amplifier, it is possible to exceed the 125c ?absolute-maximum junction temperature? under certain load current conditions. therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. the maximum power dissipation allowed in a package is determined according to: where: t jmax = maximum junction temperature t amax = maximum ambient temperature ja = thermal resistance of the package p dmax = maximum power dissipation in the package the maximum power dissipation actually produced by an ic is the total quiescent supply current times the total power supply voltage, plus the power in the ic due to the loads, or: when sourcing, and: v s =5v t a =25c a v =1 v in =10v p- output input v s =2.5v t a =25c a v =1 v in =6v p-p 1v 100s 1v p dmax t jmax - t amax ja -------------------------------------------- - = p dmax iv s i smax v s ( + - v out i ) i load i + [] = p dmax iv s i smax v out ( i - v s - ) i load i + [] = el5128
10 when sinking. where: v s = total supply voltage i smax = maximum supply current per amplifier v out i = maximum output voltage of the application i load i = load current if we set the two p dmax equations equal to each other, we can solve for r load i to avoid device overheat. figures 3 and 4 provide a convenient way to see if the device will overheat. the maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. by using the previous equation, it is a simple matter to see if p dmax exceeds the device's power derating curves. to ensure proper operation, it is important to observe the recommended derating curves in figures 3 and 4. figure 3. package power dissipation vs ambient temperature figure 4. package power dissipation vs ambient temperature driving capacitive loads the el5128 can drive a wide range of capacitive loads. as load capacitance increases, however, the -3db bandwidth of the device will decrease and the peaking increase. the amplifiers drive 10pf loads in parallel with 10k ? with just 1.5db of peaking, and 100pf with 6.4db of peaking. if less peaking is desired in these applications, a small series resistor (usually between 5 ? and 50 ? ) can be placed in series with the output. however, this will obviously reduce the gain slightly. another method of reducing peaking is to add a ?snubber? circuit at the output. a snubber is a shunt load consisting of a resistor in series with a capacitor. values of 150 ? and 10nf are typical. the advantage of a snubber is that it does not draw any dc load current or reduce the gain power supply bypassing and printed circuit board layout the el5128 can provide gain at high frequency. as with any high-frequency device, good printed circuit board layout is necessary for optimum performance. ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. for normal single supply operation, where the v s - pin is connected to ground, a 0.1f ceramic capacitor should be placed from v s + to pin to v s - pin. a 4.7f tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. one 4.7f capacitor may be used for multiple devices. this same capacitor combination should be placed at each supply pin to ground if split supplies are to be used. package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity test board 1 0.9 0.6 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 ambient temperature (c) power dissipation (w) 85 870mw j a = 1 1 5 c / w m s o p 1 0 0.8 0.5 0.7 package power dissipation vs ambient temperature jedec jesd51-3 low effective the rmal conductivity test board 0.6 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 ambient temperature (c) power dissipation (w) 85 486mw j a = 2 0 6 c / w m s o p 8 / 1 0 0.5 el5128
11 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com el5128

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