unisonic technologies co., ltd 2SC5027E npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r203-030,b high voltage and high reliability transistor . features * high speed switching * wide soa to-220 1 to-220f 1 *pb-free plating product number: 2SC5027El ordering information order number pin assignment normal lead free plating package 1 2 3 packing 2SC5027E-x-ta3-t 2SC5027El-x-ta3-t to-220 b c e tube 2SC5027E-x-tf3-t 2SC5027El-x-tf3-t to-220f b c e tube 2SC5027El-x-ta3-t (1)packing type (2)package type (3)rank (4)lead plating (1) t: tube (2) ta3: to-220, tf3: to-220f (3) x: refer to classification of h fe1 (4) l: lead free plating, blank: pb/sn
2SC5027E npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-030,b absoluate maxium ratings (tc = 25
) parameter symbol ratings unit collector-base voltage v cbo 750 v collector-emitter voltage v ceo 700 v collector-emitter voltage v ebo 7 v peak collector current i c 3 a collector current (pulse) i cp 10 a base current i b 1.5 a power dissipation p d 50 w junction temperature t j 150
storage temperature t stg -40 ~ +150
note absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (t c = 25
, unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1ma, i e =0 750 v collector-emitter breakdown voltage bv ceo i c =5ma, i b =0 700 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 7 v collector-emitter sustaining voltage v ceo(sus) i c =1.5a, i b1 = -i b2 =0.3a l=2mh, clamped 700 v collector cut-off current i cbo v cb =750v, i e =0 10 ? " emitter cut-off current i ebo v eb =5v, i c =0 10 ? " h fe1 v ce =5v, i c =0.2a 10 40 dc current gain h fe 2 v ce =5v, i c =1a 8 collector-emitter saturation voltage v ce (sat) i c =1.5a, i b =0.3a 2 v base-emitter saturation voltage v be (sat) i c =1.5a, i b =0.3a 1.5 v output capacitance cob v cb =10v, f=1mhz, i e =0 60 pf current gain bandwidth product f t v ce =10v, i c =0.2a 15 mhz turn on time t on 0.5 ? s storage time t s 3 ? s fall time t f v cc =400v i c =5i b1 = -2.5i b2 =2a r l =200 ? 0.3 ? s classification of h fe1 classification n r o range 10 ~ 20 15 ~ 30 20 ~ 40
2SC5027E npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-030,b typical characteristics 4.0 3.6 0.0 0 static characteristic 12 34 567 8910 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 i b =250 ma i b =200 ma i b =150 ma i b =100 ma i b =80ma i b =60ma i b =50ma i b =40ma i b =30ma i b =20ma i b =10ma i b =0ma 1ms 100us 1000 100 10 1 0.01 0.1 1 10 dc current gain v ce =5v base-emitter saturation voltage collector-emitter saturation voltage base-emitter on voltage dc current gain, h fe collectoer-emitter voltage, v ce (v) c o l l e c t o r c u r r e n t , i c ( a ) collector current, i c (a) base-emitter voltage, v be (v) collector current, ic (a) collector current , ic (a) s a t u r a t i o n v o l t a g e , v b e ( s a t ) , v c e ( s a t ) ( v ) 1ms 100us 10 1 0.1 0.01 0.01 0.1 1 10 4.0 3.5 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3.0 2.5 2.0 1.5 0.0 v ce =5v ic=5i b 1ms 10 1 0.1 0.01 0.1 110 1e-s 1 10 100 1000 10000 100 10 1 0.1 0.01 icm ax.( continuous ) 1 0 m s vcc =400 v 5.i b 1= - 2. 5.i b 2=ic collector-emitter voltage, v ce (v) t i m e , t o n , t s t g , t f ? s ) collector-emitter voltage, v ce (v) collector current, ic (a) 1 0 0 ? s switching time safe operating area icmax .(pulse) d c 1 m s
2SC5027E npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-030,b typical characteristics(cont.) 1ms 100us 1 100 10 10 100 1000 10000 0. 1 0.0 1 80 70 20 10 0 25 50 75 100 125 150 60 50 40 30 0 175 collector current, ic (a) collector-emitter voltage, v ce (v) power derating case temperature, t c (
) power dissipation, p d (w) reverse operating area i b2 =-0.3a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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