01/99 c-9 VCR3P p-channel silicon voltage controlled resistor jfet absolute maximum ratings at t a = 5?c. reverse gate source & reverse gate drain voltage 15 v continuous forward gate current 10 ma continuous device power dissipation 300 mw power derating 2.4 mw/c toe18 package dimensions in inches (mm) pin configuration 1 source, 2 gate & case, 3 drain at 25c free air temperature: VCR3P process pj99 static electrical characteristics min max unit test conditions gate source breakdown voltage v (br)gss 15 v i g = 1 a, v ds = ? v gate reverse current i gss 20 na v gs = 15 v, v ds = ? v gate source cutoff voltage v gs(off) 15vi d = C 1 a, v ds = C 10 v dynamic electrical characteristics drain source on resistance r ds(on) 70 200 v gs = ? v, i d = ? a f = 1 khz drain gate capacitance c dg 25 pf v dg = 10v, i s = ?a f = 1 mhz source gate capacitance c sg 15 pf v gs = 10v, i d = ?a f = 1 mhz small signal attenuators filters amplifier gain control oscillator amplitude control 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page c-9
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