? 2004 ixys all rights reserved 1 - 2 ixys reserves the right to change limits, test conditions and dimensions. vbo 36 420 symbol conditions maximum ratings i dav t c = 85c, module 23 a i davm t c = 62c, module 30 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 550 a v r = 0 t = 8.3 ms (60 hz), sine 600 a t vj = t vjm t = 10 ms (50 hz), sine 500 a v r = 0 t = 8.3 ms (60 hz), sine 550 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 1520 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 1520 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 1250 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 1250 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m5) 2 10% nm (10-32 unf) 18 10% lb.in. weight typ. 22 g i davm = 30 a v rrm = 800-1800 v features package with ?" fast-on terminals isolation voltage 3000 v~ planar passivated chips blocking voltage up to 1800 v low forward voltage drop ul registered e 72873 applications supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors advantages easy to mount with one screw space and weight savings improved temperature and power cycling data according to iec 60747 and refer to a single diode unless otherwise stated. symbol conditions characteristic values i r t vj = 25c; v r = v rrm 0.3 ma t vj = t vjm ;v r = v rrm 2.0 ma v f i f = 150 a; t vj = 25c 1.7 v v t0 for power-loss calculations only 0.8 v r t 5.8 m ? r thjc per diode; dc current 6.2 k/w per module 1.55 k/w r thjk per diode; dc current 7.4 k/w per module 1.85 k/w d s creeping distance on surface 12.7 mm d a creepage distance in air 9.4 mm a max. allowable acceleration 50 m/s 2 dimensions in mm (1 mm = 0.0394") single phase rectifier bridge + ? ~ ~ v rsm v rrm type vv 800 800 vbo 36-08no8 1200 1200 vbo 36-12no8 1400 1400 vbo 36-14no8 1600 1600 vbo 36-16no8 1800 1800 vbo 36-18no8 ~ ~ _
? 2004 ixys all rights reserved 2 - 2 ixys reserves the right to change limits, test conditions and dimensions. vbo 36 420 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig.5 maximum forward current at case temperature fig. 4 power dissipation versus direct output current and ambient temperature fig. 3 i 2 dt versus time (1-10ms) per diode or thyristor fig. 6 transient thermal impedance per diode or thyristor, calculated 0.5 1 1.5 2 2.5 0 50 100 150 200 v [v] f i f [a] 1:t = 150c vj 2:t = 25c vj 1 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 10 0 10 1 10 2 10 3 t[ms] i (a) fsm tvj=45c tvj=150c 480 500 i -- -- - - i fsm f(ov) 0 v rrm 1 / 2 v rrm 1 v rrm 2 4 6 10 tvj=45c tvj=150 c t [m s] 1 10 10 10 2 3 4 as 2 20 0 10 20 30 40 50 60 70 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 tc c dc sin.180 rec.120 rec.60 rec.30 7.14 2.86 1.43 0.71 0.36 = rthca [k/w] ifavm [a] tamb [k] 0 50 100 150 [w] pv to t psb 36 50 10 0 15 0 20 0 0 10 20 30 40 50 dc sin.180 rec.120 rec.60 rec.30 t (c) c i dav [a] 0.01 0.1 1 10 2 4 6 8 k/w z th t[s] z thjk z thjc
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