dms2220lfw document number: ds31547 rev. 8 - 2 1 of 6 www.diodes.com march 2009 ? diodes incorporated dms2220lfw new product sbr is a registered trademark of diodes incorporated. p-channel enhancemen t mode mosfet with integrated sbr features ? low on-resistance ? 95m @v gs = -4.5v ? 120m @v gs = -2.5v ? 86m (typ) @v gs = -1.8v ? low gate threshold voltage, -1.3v max ? fast switching speed ? low input/output leakage ? incorporates low v f super barrier rectifier (sbr) ? low profile, 0.5mm max height ? lead free/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn3020-8 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? nipd au over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 5 ? ordering information: see page 5 ? weight: 0.011 grams (approximate) maximum ratings ? total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 1) p d 1.5 w thermal resistance, junction to ambient r ja 85 c/w operating and storage temperature range t j , t stg -55 to +150 c maximum ratings ? p-chann el mosfet ? q1 @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 1) i d -2.9 a pulsed drain current (note 4) i dm -10 a maximum ratings ? sbr ? d1 @t a = 25c unless otherwise specified characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 35 v rms reverse voltage v r ( rms ) 25 v average rectified output current i o 1 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load i fsm 3 a notes: 1. device mounted on fr-4 pcb, on minimum recommended, 2oz copper pad layout. 2. no purposefully added lead. 3. diodes inc.?s ?green? policy can be found on ou r website at http://www.diodes .com/products/lead_free/index.php. 4. repetitive rating, pulse widt h limited by junction temperature. dfn3020-8 pin configuration top view internal schematic bottom view bottom view g a k s d a k k d d top view g ak s ak d d
dms2220lfw document number: ds31547 rev. 8 - 2 2 of 6 www.diodes.com march 2009 ? diodes incorporated dms2220lfw new product sbr is a registered trademark of diodes incorporated. electrical characteristics ? p-channel mosfet ? q1 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? ? ? 100 800 na v gs = 8v, v ds = 0v v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -0.45 ? -1.3 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? ? 60 74 86 95 120 ? m v gs = -4.5v, i d = -2.8a v gs = -2.5v, i d = -2.0a v gs = -1.8v, i d = -1.0a forward transfer admittance |y fs | ? 8 ? s v ds = -5v, i d = -2.8a diode forward voltage (note 5) v sd ? 0.7 -1.2 v v gs = 0v, i s = -1.6a dynamic characteristics input capacitance c iss ? 632 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 65 ? pf reverse transfer capacitance c rss ? 54 ? pf electrical characteris tics ? sbr ? d1 @ t a = 25oc unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage (note 5) v ( br ) r 35 40 ? v i r = 1ma forward voltage v f ? ? ? ? 0.42 0.49 v i f = 0.5a i f = 1.0a reverse current (note 5) i r ? ? 100 a v r = 20v notes: 5. short duration pulse test used to minimize self-heating effect. q1, p-channel mosfet 01 2 3 45 fig. 1 typical output characteristics -v , drain-source voltage (v) ds 0 2 4 6 8 10 -i , d r ai n c u r r e n t (a) d v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs v = -1.0v gs v = -1.2v gs 0.5 1 1.5 2 0 2 4 6 8 10 -i , d r ain c u r r en t (a) d fig. 2 typical transfer characteristics -v , gate source voltage (v) gs v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a
dms2220lfw document number: ds31547 rev. 8 - 2 3 of 6 www.diodes.com march 2009 ? diodes incorporated dms2220lfw new product sbr is a registered trademark of diodes incorporated. q1, p-channel mosfet - continued 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 012345678 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain current (a) d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 012 34 56 78 -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 0.03 0.05 0.07 0.09 0.11 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance ( ) ds(on) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 10 100 1,000 10,000 c , c a p a c i t an c e (p f ) 048121620 fig. 7 typical capacitance -v , drain-source voltage (v) ds f = 1mhz c iss c oss c rss fig. 8 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) i = -250a d i = -1ma d
dms2220lfw document number: ds31547 rev. 8 - 2 4 of 6 www.diodes.com march 2009 ? diodes incorporated dms2220lfw new product sbr is a registered trademark of diodes incorporated. q1, p-channel mosfet - continued 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current 0 2 4 6 8 10 -i , s o u r c e c u r r e n t (a) s t = 25c a d1, sbr fig. 10 forward power dissipation 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.5 1 1.5 i , average forward current (a) f(av) p , p o we r dissi p a t i o n (w) d fig. 11 typical forward characteristics 0.0001 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0.8 v , instantaneous forward voltage (v) f i , instantaneous forward current (a) f
dms2220lfw document number: ds31547 rev. 8 - 2 5 of 6 www.diodes.com march 2009 ? diodes incorporated dms2220lfw new product sbr is a registered trademark of diodes incorporated. d1, sbr - continued fig. 12 typical reverse characteristics 0.01 0.1 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v , instantaneous reverse voltage (v) r i , instantaneous reverse current(ua) r t = 25c a t = 85c a t = 150c a t = 125c a fig. 13 total capacitance vs. reverse voltage v , dc reverse voltage (v) r 1 10 100 1,000 10,000 0.1 1 10 100 c , c a p a c i t an c e (p f ) f = 1mhz fig. 14 forward current derating curve 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 175 t , ambient temperature (c) a i , average forward current (a) f(av) note 2 fig. 15 operating temperature derating 0 25 50 75 100 125 150 010203040 v , dc reverse voltage (v) r t , derated ambient temperature (c) a ordering information (note 6) part number case packaging DMS2220LFW-7 dfn3020-8 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d me = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) ym me
dms2220lfw document number: ds31547 rev. 8 - 2 6 of 6 www.diodes.com march 2009 ? diodes incorporated dms2220lfw new product sbr is a registered trademark of diodes incorporated. package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. dfn3020-8 dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d1 0.90 1.10 1.00 e - - 0.65 e 1.95 2.075 2.00 e1 0.80 1.00 0.90 l 0.30 0.40 0.35 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.600 g1 0.450 g2 0.150 r 0.150 x 0.390 x1 1.000 y 0.550 y1 0.900 b e e1 d1 l d e a z a1 a3 xc y1 y x1 r g2 x1 g1 y1 g g
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