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savantic semiconductor product specification silicon npn power transistors NS50N description with to-220c package complement to type ns50p applications for medium power linear amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 6 a i cm collector current-pulse 10 a i b base current 2 a t c =25 65 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors NS50N characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =30ma; i b =0 60 v v ce (sat) collector-emitter saturation voltage i c =6a; i b =0.6a 1.5 v v be base-emitter on voltage i c =6a ; v ce =4v 2.0 v i ces collector cut-off current v ce =60v; v eb =0 0.4 ma i ceo collector cut-off current v ce =30v; i b =0 0.7 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =0.3a ; v ce =4v 50 160 h fe-2 dc current gain i c =3a ; v ce =4v 15 f t transition frequency i c =0.5a ; v ce =10v 3 mhz h fe-1 classifications a b 50-100 80-160
savantic semiconductor product specification 3 silicon npn power transistors NS50N package outline fig.2 outline dimensions

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