ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead v illage drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 2223-9A 9 watts - 24 volts, class c microwave 2200 - 2300 mhz general description the 2223-9 is a common base transistor capable of providing 9 watts of class c, rf output power over the band 2200 - 2300 mhz. this transistor is designed for microwave broadband class c amplifier applications. it includes input and output prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. the transistor uses a fully hermetic high temperature solder sealed package. case outline 55aw, style 1 absolute maximum ratings maximum power dissipation @ 25 c 29 watts o maximum voltage and current bvces collector to emiter voltage 45 volts bvebo emitter to base voltage 3.5 volts ic collector current 1.5 amps maximum temperatures storage temperature - 65 to + 200 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test min typ max units conditions pout pin power input vcc = 24 volts 1.5 watts pg h c vswr power output f =2.2 - 2.3 ghz 9 watts power gain 8.0 db efficiency 40 % load mismatch tolerance 10:1 bvces bvebo emitter to base breakdown ie = 10 ma 3.5 volts hfe cob q jc collector to base breakdown ic = 50 ma 40 volts current gain vce = 5 v, ic= 160ma 10 100 output capacitance* vcb = 28v, 1mhz pf thermal resistance tc = 25 c 6.0 c/w oo * not measureable due to internal prematch network august 1996
2223-9A august 1996
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