ds30658 rev. 7 - 2 1 of 9 www.diodes.com lmn200b02 ? diodes incorporated lmn200b02 200 ma load switch featuring pr e-biased pnp transistor and n- mosfet with gate pull down resistor general description lmn200b02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. it features a discrete pass transistor with stable v ce(sat) which does not depend on the input voltage and can support continuous maximum current of 200 ma . it also contains a discrete n-mosfet that can be used as control. this n-mosfet also has a built-in pull down resistor at its gate. the component can be used as a part of a circuit or as a stand alone discrete device. features ? voltage controlled small signal switch ? n-mosfet with gate pull-down resistor ? surface mount package ? ideally suited for automated assembly processes ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-363 ? case material: molded plas tic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 8 ? ordering information: see page 8 ? weight: 0.006 grams (approximate) sub-component p/n reference device type r1 (nom) r2 (nom) r3 (nom) figure ddtb142ju_die q1 pnp transistor 10k 470 ? 2 dsnm6047_die (with gate pull-down resistor) q2 n-mosfet ? ? 37k 2 maximum ratings, total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 200 mw power derating factor above 125c p der 1.6 mw/c output current i out 200 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit operating and storage temperature range t j ,t stg -55 to +150 c thermal resistance, junction to ambient air (equivalent to one heated junction of pnp transistor) (note 3) r ja 625 c/w notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/produ cts/lead_free/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as show n on diodes inc. suggested pad layout docume nt ap02001, which can be found on our website at http://www.diodes.c om/datasheets/ap02001.pdf. fig. 1: sot-363 s d g c e b q2 nmos r3 37k r2 470 q1 pnp r1 10k 1 2 3 4 5 6 c_q1 e_q1 g_q2 d_q2 s_q2 b_q1 dsnm6047_die ddtb142ju_die fig. 2 schematic and pin configuration 1 2 3 4 5 6
ds30658 rev. 7 - 2 2 of 9 www.diodes.com lmn200b02 ? diodes incorporated maximum ratings: sub-component device: pre-biased pnp transistor (q1) @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v supply voltage v cc -50 v input voltage v in +5 to -6 v output current i c -200 ma sub-component device: n-mosfet with gate pull-down resistor (q2) @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 60 v drain gate voltage (r gs 1m ohm) v dgr 60 v gate-source voltage continuous pulsed (tp<50 us) v gss +/-20 v +/-40 drain current (page 1: note 3) continuous (v gs = 10v) pulsed (tp <10 us, duty cycle <1%) i d 115 ma 800 continuous source current i s 115 ma
ds30658 rev. 7 - 2 3 of 9 www.diodes.com lmn200b02 ? diodes incorporated electrical characteristics: pr e-biased pnp transistor (q1) @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base cut off current i cbo ? ? -100 na v cb = -50v, i e = 0 collector-emitter cut off current i ceo ? ? -500 na v ce = -50v, i b = 0 emitter-base cut off current i ebo ? -0.5 -1 ma v eb = -5v, i c = 0 collector-base breakdown voltage v (br)cbo -50 ? ? v i c = -10 ua, i e = 0 collector-emitter breakdown voltage v (br)ceo -50 ? ? v i c = -2 ma, i b = 0 input off voltage v i(off) ? -0.55 -0.3 v v ce = -5v, i c = -100ua output voltage v oh -4.9 ? ? v v cc = -5v, v b = -0.05v, r l = 1k ouput current (leakage current same as i ceo ) i o(off) ? ? -500 na v cc = -50v, v i = 0v on characteristics collector-emitter saturation voltage v ce(sat) ? ? -0.15 v i c = -10 ma, i b = -0.5 ma ? ? -0.2 v i c = -50ma, i b = -5ma ? ? -0.2 v i c = -20ma, i b = -1ma ? ? -0.25 v i c = -100ma, i b = -10ma ? ? -0.25 v i c = -200ma, i b = -10ma ? ? -0.3 v i c = -200ma, i b = -20ma equivalent on-resistance* r ce(sat) ? ? 1.5 i c = -200ma, i b = -10ma dc current gain h fe 60 150 ? ? v ce = -5v, i c = -20 ma 60 215 ? ? v ce = -5v, i c = -50 ma 60 245 ? ? v ce = -5v, i c = -100 ma 60 250 ? ? v ce = -5v, i c = -200 ma input on voltage v i(on) -2.45 -0.7 ? v v o = -0.3v, i c = -2 ma output voltage (equivalent to v ce(sat) or v o(on) ) v ol ? -0.065 -0.15 v v cc = -5v, v b = -2.5v, i o /i i = -50ma /-2.5ma input current i i ? -9 -28 ma v i = -5v base-emitter turn-on voltage v be(on) ? -1.13 -1.3 v v ce = -5v, i c = 200ma base-emitter saturation voltage v be(sat) ? -3.2 -3.6 v i c = -50ma, i b = -5ma ? -4.6 -5.5 i c = -80ma, i b = -8ma input resistor (base), +/- 30% r2 ? 0.47 ? k ? pull-up resistor (base to vcc supply), +/- 30% r1 ? 10 ? k ? resistor ratio (input resistor/pull-up resistor) +/- 20% r1/r2 ? 21 ? ? ? small signal characteristics transition frequency (gain bandwidth product) f t ? 200 ? mhz v ce = -10v, i e = -5ma, f = 100mhz collector capacitance, (c cbo -output capacitance) c c ? 20 ? pf v cb = -10v, i e = 0a, f = 1mhz * pulse test: pulse width, tp<300 s, duty cycle, d<=0.02
ds30658 rev. 7 - 2 4 of 9 www.diodes.com lmn200b02 ? diodes incorporated electrical characteristics: n-mosfet with gate pull-down r esistor (q2) @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage, bv dss v (br)dss 60 ? ? v v gs = 0v, i d = 10 a zero gate voltage drain current (drain leakage current) i dss ? ? 1 a v gs =0v, v ds = 60v gate-body leakage current, forward i gssf ? ? 0.95 ma v gs = 20v, v ds = 0v gate-body leakage current, reverse i gssr ? ? -0.95 ma v gs = -20v, v ds = 0v on characteristics (note 4) gate source threshold voltage (control supply voltage) v gs(th) 1 1.9 2.2 v v ds = v gs , i d = 0.25ma static drain-source on-state voltage v ds(on) ? 0.10 1.5 v v gs = 5v, i d = 50ma ? 0.15 3.75 v gs = 10v, i d = 115ma on-state drain current i d(on) 500 ? ? ma v gs = 10v, v ds 2 x v ds(on) static drain-source on-resistance r ds(on) ? 1.6 3 v gs = 5v, id = 50ma ? 1.4 2 v gs = 10v, id = 500ma forward transconductance g fs 80 240 ? ms v ds 2 x v ds(on) , i d = 115 ma 80 350 ? v ds 2 x v ds(on) , i d = 200 ma gate pull-down resistor, +/- 30% r3 ? 37 ? k ? dynamic characteristics input capacitance c iss ? ? 50 pf v ds = -25v, v gs = 0v, f = 1mhz output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 5 pf switching characteristics turn-on delay time t d(on) ? ? 20 ns v dd = 30v, v gs =10v, i d = 200ma, r g = 25 ohm, r l = 150 ohm turn-off delay time t d(off) ? ? 40 ns source-drain (body) diode characteristics and maximum ratings drain-source diode forward on-voltage v sd ? 0.90 1.5 v v gs = 0v, i s = 115 ma maximum continuous drain-source diode forward current (reverse drain current) i s ? ? 115 ma ? maximum pulsed drain-source diode forward current i sm ? ? 800 ma ? notes: 4. short duration pulse test used to minimize self-heating effect. typical characteristics 0 50 25 50 75 100 125 150 175 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 3 max power dissipation vs. ambient temperature (total device) a 100 150 200 0 (note 3) 250 300 350
ds30658 rev. 7 - 2 5 of 9 www.diodes.com lmn200b02 ? diodes incorporated typical pre-biased pnp transi stor (q1) characteristics i , collector current (a) fig. 4 v vs. i c ce(sat) c v, c o lle c t o r v o l t a g e (v) ce(sat) i , collector current (a) fig. 5 v vs. i c ce(sat) c v, c o lle c t o r v o l t a g e (v) ce(sat) i , collector current (ma) fig. 6 v vs. i c be(sat) c v , base emi t t e r v o l t a g e (v) be(sat) 1 10 100 1,000 i , collector current (ma) fig. 7 v vs. i c be(on) c v , base emi t t e r v o l t a g e (v) be(on) i , collector current (ma) fig. 8 h vs. i c fe c h, d c c u r r e n t g ai n fe
ds30658 rev. 7 - 2 6 of 9 www.diodes.com lmn200b02 ? diodes incorporated ty pical n-channel mosfet (q2) characteristics 0 0.2 0.4 0.6 0.8 1.0 01 2 345 6 7 v , drain-source voltage (v) fig. 9 output characteristics ds i, d r ai n c u r r e n t (a) d v , gate-source voltage (v) fig. 10 transfer characteristics gs i, d r ain c u r r en t (a) d t , junction temperature (c) fig. 11 gate threshold voltage vs. junction temperature j 0 1.2 1.4 1.6 1.8 2.0 2. 2 -50 -75 -25 0 255075100125150 0 1 2 3 4 5 i , drain current (a) fig. 12 static drain-source on-resistance vs. drain current d r , s t a t i c d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e ( ) d s ( o n ) 1 i , drain current (a) fig. 13 static drain-source on-resistance vs. drain current d 4 r , s t a t i c d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e ( ) d s ( o n ) 0 v gate source voltage (v) fig. 14 static drain-source on-resistance vs. gate-source voltage gs , r , s t a t i c d r a i n - s o u r c e o n - s t a t e r e s i s t a n c e ( ) d s ( o n )
ds30658 rev. 7 - 2 7 of 9 www.diodes.com lmn200b02 ? diodes incorporated t , junction temperature ( c) fig. 15 j static drain-source on-state resistance vs. junction temperature r , static drain-source on-state resistance ( ) ds(on) i , reverse drain current (a) s 0.5 11.5 2 2.5 i , reverse drain current (a) s g , forward transconductance (ms) fs
ds30658 rev. 7 - 2 8 of 9 www.diodes.com lmn200b02 ? diodes incorporated application details pnp transistor (ddtb142ju) and n-mosfet (dsnm6047) with gate pull-down resistor integrated as one in lmn200b02 can be used as a discrete entity for general purpose applications or as an integrated circuit to function as a load switch. when it is used as the latter as shown in fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. these devices are designed to deliver continuous output load current up to a maximum of 200 ma. the mosfet switch draws no current, hence loading of control circuit is prevented. care must be taken for higher levels of dissipati on while designing for higher load conditions. these devic es provide high power and also consume less space. the product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (please see fig. 20 for one example of a typica l application circuit used in conjunction with voltage regulator as a part of a power management system) typical application circuit ordering information (note 5) device packaging shipping lmn200b02-7 sot-363 3000/tape & reel notes: 5. for packaging details, go to our websit e at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 code t u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d pm2 = product type marking code, ym = date code marking y = year (ex: t = 2006) m = month (ex: 9 = september) fig. 19 circuit diagram fig. 20 vin control d e s b g c q1 pnp q2 nmos r2 470 r1 10k r3 37k load ddtb142ju dsnm6047 vout 5v supply vout gnd vin control u2 voltage regulator in out control logic circuit (pic, comparator etc) u1 vin out1 gnd diodes inc. u3 lnm200b02 1 3 2 4 5 6 e_q1 d_q2 g_q2 s_q2 b_q1 c_q1 load switch point of load pm2 ym
ds30658 rev. 7 - 2 9 of 9 www.diodes.com lmn200b02 ? diodes incorporated mechanical details suggested pad layout sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 a m j l d b c h k f x z y c1 c2 c2 g
ds30658 rev. 7 - 2 10 of 9 www.diodes.com lmn200b02 ? diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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