vishay siliconix si4386dy document number: 73109 s09-0226-rev. d, 09-feb-09 www.vishay.com 1 n-channel reduced q g , fast switching mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? gen ii power mosfets ? pwm optimized ? 100 % r g tested applications ? dc/dc conversion for pc product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 30 0.007 at v gs = 10 v 16 11 0.0095 at v gs = 4.5 v 13.5 sd s d sd g d so- 8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si4386dy-t1-e3 (lead (p b )-free) SI4386DY-T1-GE3 (lead (p b )-free and halogen-free) n -channel mosfet g d s notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d 16 11 a t a = 70 c 13 9 pulsed drain current i dm 50 continuous source current (diode conduction) a i s 2. 8 1.3 single pulse avalanche current l = 0.1 mh i as 20 avalanche energy e as 20 mj maximum power dissipation a t a = 25 c p d 3.1 1.47 w t a = 70 c 2 0.95 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (mosfet) a t 10 s r thja 34 40 c/w steady state 71 8 5 maximum junction-to-foot (drain) steady state r thjf 1 8 22
www.vishay.com 2 document number: 73109 s09-0226-rev. d, 09-feb-09 vishay siliconix si4386dy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 16 a 0.005 8 0.007 v gs = 4.5 v, i d = 13.5 a 0.007 8 0.0095 forward transconductance a g fs v ds = 15 v, i d = 16 a 51 s diode forward voltage a v sd i s = 2. 8 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 16 a 11 1 8 nc gate-source charge q gs 5. 8 gate-drain charge q gd 3.0 gate resistance r g 0. 8 1.7 2.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 12 1 8 ns rise time t r 914 turn-off delay time t d(off) 35 53 fall time t f 10 15 source-drain reverse recovery time t rr i f = 2. 8 a, di/dt = 100 a/s 25 50 output characteristics 0 10 20 30 40 50 012345 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d transfer characteristics 0 10 20 30 40 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 c t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d
document number: 73109 s09-0226-rev. d, 09-feb-09 www.vishay.com 3 vishay siliconix si4386dy typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.004 0.008 0.012 0.016 0 . 020 0 1020304050 v gs = 10 v ( ) e c n a t s i s e r - n o - r ) n o ( s d i d - drain c u rrent (a) v gs = 4.5 v 0 1 2 3 4 5 6 03691215 v ds = 15 v i d = 16 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 440 880 1320 1760 2200 0 4 8 121620 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 0.8 1.0 1.2 1.4 1.6 1 . 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 16 a t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( 0.000 0.006 0.012 0.018 0.024 0 . 030 0246810 i d = 16 a ( ) e c n a t s i s e r - n o - r ) n o ( s d v gs - gate-to-so u rce v oltage ( v )
www.vishay.com 4 document number: 73109 s09-0226-rev. d, 09-feb-09 vishay siliconix si4386dy typical characteristics 25 c, unless otherwise noted threshold voltage - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0 . 4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( v ) h t ( s g t j - temperat u re (c) single pulse power 0.01 0 1 50 20 30 10 600 0.1 time (s) 10 40 ) w ( r e w o p 100 safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 ms ) a ( t n e r r u c n i a r d - i d 0.1 t c = 25 c single p u lse 10 ms 100 ms dc 1 s 10 s v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r ds(on) * normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 67 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
vishay siliconix si4386dy document number: 73109 s09-0226-rev. d, 09-feb-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73109 . normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
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