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? freescale semiconductor, inc., 2006?2010. all rights reserved. freescale semiconductor data sheet: advance information this document contains information on a new product. specificatio ns and information herein are su bject to change without notice . document number: mc13851 rev. 2.0, 12/2010 mc13851 package information plastic package: mlpd-8 2.0 2.0 0.6 mm case: 2128-01 ordering information device device marking package MC13851EP 851 mlpd-8 1 introduction the mc13851 is a cost-effectiv e, high ip3 lna with low noise figure. this is the smal ler leadless package version of the mc13821 device. the mc13851 includes an integrated bypass switch to preserve high input intercept performance in variable signal strength environments and boosts dynamic range. on-c hip bias circuitry offers low system cost. the input a nd output match are external to allow maximum design flexibility. an external resistor is used to set device curre nt which allows balancing required linearity with low cu rrent consumption. gain is optimized for applications greater than 1000 mhz. the mc13851 is fabricated with the advanced rf bicmos process using the es ige:c module and is available in the 2 2 mm mlpd-8 leadless package, offering a small, low height, easy-to-solder solu tion for applications with tight printed circuit board placement requirements. mc13851 general purpose low noise amplifier with bypass switch contents: 1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2 electrical specifications . . . . . . . . . . . . . . . . . . .3 3 application information . . . . . . . . . . . . . . . . . . . .9 4 printed circuit and bill of materials . . . . . . . . .20 5 scattering and noise parameters . . . . . . . . . . .22 6 packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 7 product documentation . . . . . . . . . . . . . . . . . . .33 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .33
introduction mc13851 advance information, rev. 2.0 2 freescale semiconductor 1.1 features the mc13851 is intended for applications from 1000 mhz to 2500 mhz and the mc13852 is for applications less than 1000 mhz. ? gain: 18.7 db (typical) at 1960 mhz and 17.7 db (typical) at 2140 mhz ? output third order intercept point (oip3): 16 dbm at 1960 mhz and 17 dbm (typical) dbm at 2140 mhz ? noise figure (nf): 1.37 db (typica l) at 1960 mhz and 1.46 db at 2140 mhz ? output 1 db compression point (p1db): 8 dbm (typical) at 1960 mhz and 8 dbm (typical) at 2140 mhz ? ip3 boost circui try from freescale ? bypass mode has return losses comparable to ac tive mode, for use in systems with filters and duplexers ? bypass mode improves dynamic range in variable signal strength environments ? integrated logic-controlled sta ndby mode with current drain < 1ua ? total supply current variable from 2.5 ma?5 ma using an external bias resistor ? in a receiver system with 20% active mode and 80% bypass mode, the averag e current drain is < 0.6 ma ? on-chip bias sets the bias point ? bias stabilized for device and temperature variations ? mlpd-8 leadless package with low parasitics ? 1575 mhz, 1960 mhz, 2140 mhz and 2500 mhz appl ication circuit eval uation boards with characterization data are available ? available in tape and reel packaging 1.2 applications ideal for use in any rf product that operates be tween 1000 mhz and 2.5 ghz, and may be applied in: ? buffer amplifiers ?mixers ? if amplifiers ? voltage controlled oscillators (vcos) ? use with transceivers requiring external lnas ? smart metering ? mobile?cellular front end lna, gps, two-way radios ? consumer?wlan, 802.11 b/g ? auto?gps, active antenna, wireless security ? low current drain/long standby time for extended battery life applications
electrical specifications mc13851 advance information, rev. 2.0 freescale semiconductor 3 figure 1 shows a simplified block diagram of the mc 13851 with the pinouts and location of the pin 1 designator on the package. figure 1. functional block diagram 2 electrical specifications table 1 . lists the maximum ratings for the device. table 2 lists the recommended operating conditions. table 1. maximum ratings (ta=25c, unless otherwise noted) rating symbol value unit supply voltage vcc 3.3 vdc storage temperature range t stg -65?150 c operating ambient temperature range t a -30?85 c rf input power p rf 10 dbm power dissipation pdis 100 mw thermal resistance, junction to case r thetajc 24 c/w thermal resistance, junction to ambient, 4 layer board r thetaja 90 c/w note: maximum ratings 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the recommended operat ing conditions and electrical characteristics tables. 2. esd (electrostatic discharge) immu nity meets human body model (hbm) 200v. charge device model (cdm) 450v, and machine model (mm) 50v table 2. recommended operating conditions characteristic symbol min typ max unit rf frequency range f rf 1000 ? 2500 mhz supply voltage v cc 2.3 2.75 3 v pin 1 identifier
electrical specifications mc13851 advance information, rev. 2.0 4 freescale semiconductor table 3 shows the use of the gain and en able pins to select active mode (high gain), bypass mode (low gain) or standby mode (disable) operation. table 4 lists the electrical characteristics associat ed with noise performa nce measured in a 50 system. additional noise parameters are listed in table 15 and table 16 . also listed are the typical icc and rf turn on times for the device. information a nd details on the boards are shown in section 4, ?printed circuit and bill of materials .? logic voltage input high voltage input low voltage ?1.25 0 1.8 0 v cc 0.80 vdc vdc table 3. truth table pin function pin name enable disable low gain high gain low gain high gain logic circuit bias vcc vcc 1 1 1 1 toggles gain mode (active or bypass) gain 0 1 0 1 toggles lna on/off enable 1 1 0 0 notes: 1. logic state 1 equals vcc voltage. l ogic state of 0 equals ground potential. 2. vcc is inductively coupled to lna out pin and vcc pin 3. minimum logic state 1 for enable and gain pins is 1.25v 4. maximum logic state 0 for enable and gain pins is 0.8v table 4. electrical characteristics (vcc = 2.75 v, ta = 25c) characteristic symbol min typ max unit insertion gain |s21| 2 db r1=1.2 k , freq=1.575 ghz 17.4 18.9 ? r1=1.2 k , freq=2.14 ghz 14.5 16 ? r1=1.5 k , freq=1.575 ghz 16.4 17.9 ? r1=1.5 k , freq=2.14 ghz 14.9 16.4 ? maximum stable gain and/or maximum available gain [note1] msg, mag db r1=1.2 k , freq=1.575 ghz 21.1 22.6 ? r1=1.2 k , freq=2.14 ghz 19.6 21.1 ? r1=1.5 k , freq=1.575 ghz 19 20.5 ? r1=1.5 k , freq=2.14 ghz 18.1 19.6 ? minimum noise figure nfmin db r1=1.2 k , freq=1.575 ghz ? 0.97 1.3 r1=1.2 k , freq=2.14 ghz ? 1.07 1.4 r1=1.5 k , freq=1.575 ghz ? 0.98 1.3 r1=1.5 k , freq=2.14 ghz ? 1.1 1.4 table 2. recommended operating conditions (continued) characteristic symbol min typ max unit
electrical specifications mc13851 advance information, rev. 2.0 freescale semiconductor 5 table 5 lists the electrical characteristics measured on evaluation boards tuned for typical application frequencies when rbias is 1.2 k . further details on the application circuits are shown in section 3, ?application information ? associated gain at minimum noise figure gnf db r1=1.2 k , freq=1.575 ghz 20.5 22 ? r1=1.2 k , freq=2.14 ghz 17 18.6 ? r1=1.5 k , freq=1.575 ghz 20.5 22 ? r1=1.5 k , freq=2.14 ghz 17.5 19 ? icc and rf turn on time enable trigger total time of 1.8 second from 0 to 2.75 v s icc rise time from 0 to 76% of final current level ? 6.4 ? icc rise time from 0 to 87% of final current level ? 9.6 ? rf on time from leading edge of enable trigger to rf turn-on ? 1.37 ? note: maximum available gain and maximum stable gain are defined by the k factor as follows: mag = |s21/s12(k sqrt(k2-1)) |, if k>1, msg = |s21/s12|, if k<1 table 5. electrical characteristics measured in frequency specific tuned circuits (vcc = 2.75v, ta = 25c, rbias =1.2k unless otherwise noted) characteristic symbol min typ max unit 1575 mhz (refer to figure 7 ) frequency f ? 1575 ? mhz active rf gain g 18.4 19.4 ? db active noise figure nf ? 1.28 1.6 db active input third order intercept point iip3 -6.5 -5 ? dbm active input 1db compression point p1dboutput 6.3 7.4 ? dbm active current @ 2.75v, rbias=1.2k icc ? 4.8 5.8 ma active current @ 2.75v, rbias=1.5k icc ? 3.8 4.8 ma active gain s21 18 19 ? db bypass rf gain g -6.5 -5.5 ? db bypass noise figure nf ? 6 7 db bypass input third order intercept point iip3 24 25.5 ? dbm bypass current ? ? 4 20 a bypass gain s21 -7 -5.5 ? db 1960 mhz (refer to figure 8 ) frequency f ? 1960 ? mhz active rf gain g 17.7 18.7 ? db active noise figure nf ? 1.37 1.65 db active input third order intercept point iip3 -4 -2.7 ? dbm active input 1db compression point p1dboutput 6 8 ? dbm table 4. electrical characteristics (vcc = 2.75 v, ta = 25c) characteristic symbol min typ max unit
electrical specifications mc13851 advance information, rev. 2.0 6 freescale semiconductor active current @ 2.75v, rbias=1.2k icc ? 4.8 5.8 ma active current @ 2.75v, rbias=1.5k icc ? 3.8 4.8 ma active gain s21 17.4 18.4 ? db bypass rf gain g -6.5 -4.9 ? db bypass noise figure nf ? 4.8 6.2 db bypass input third order intercept point iip3 24.5 26 ? dbm bypass current ? ? 4 20 a bypass gain s21 -6.5 -5 ? db 2140 mhz (refer to figure 9 ) frequency f ? 2140 ? mhz active rf gain g 16.7 17.7 ? db active noise figure nf ? 1.46 1.75 db active input third order intercept point iip3 -3 -0.5 ? dbm active input 1db compression point p1dboutput 6.7 8 ? dbm active current @ 2.75v, rbias=1.2k icc ? 4.8 5.8 ma active current @ 2.75v, rbias=1.5k icc ? 3.8 4.8 ma active gain s21 16.5 17.6 ? db bypass rf gain g -5.8 -4.8 ? db bypass noise figure nf ? 4.9 5.9 db bypass input third order intercept point iip3 24.5 25.7 ? dbm bypass current ? ? 4 20 a bypass gain s21 -5.7 -4.7 ? db 2400 mhz (refer to figure 10 ) frequency f ? 2400 ? mhz active rf gain g 15 16 ? db active noise figure nf ? 1.52 1.8 db active input third order intercept point iip3 -0.2 2 ? dbm active input 1db compression point p1dboutput 7 8.1 ? dbm active current @ 2.75v, rbias=1.2k icc ? 4.8 5.8 ma active current @ 2.75v, rbias=1.5k icc ? 3.8 4.8 ma active gain s21 14.7 15.7 ? db bypass rf gain g -6 -5 ? db bypass noise figure nf ? 5.2 5.8 db bypass input third order intercept point iip3 24 25.3 ? dbm bypass current ? ? 4 20 a bypass gain s21 -5.4 -5 ? db table 5. electrical characteristics measured in frequency specific tuned circuits (continued) (vcc = 2.75v, ta = 25c, rbias =1.2k unless otherwise noted) characteristic symbol min typ max unit
electrical specifications mc13851 advance information, rev. 2.0 freescale semiconductor 7 figure 2 and figure 3 show maximum stable and maximum avai lable gain and forward insertion gain versus frequency for the packaged device in a 50 system using bias resistors of 1.5 k and 1.2 k . figure 2. maximum stable/available gain and forward insertion gain vs. frequency (rbias = 1.5k ) figure 3. maximum stable/available gain and forward insertion gain vs. frequency (rbias = 1.2 k ) 10 12 14 16 18 20 22 24 26 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 frequency ? (ghz) msg/mag ? (db) |s21|^2 ? (db) msg/mag msg, mag, |s21| 2 (db) |s21| 2 |s21| 2 10 12 14 16 18 20 22 24 26 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 msg/mag ? (db) |s21|^2 ? (db) msg mag msg, mag, |s21| 2 (db) |s21| 2 |s21| 2
electrical specifications mc13851 advance information, rev. 2.0 8 freescale semiconductor figure 4 and figure 5 show minimum noise figure and associated gain versus frequency for the packaged device in a 50 system using bias resistors of 1.5 k and 1.2 k . figure 4. minimum noise figure and associ ated gain vs. frequency (rbias = 1.5 k ) figure 5. minimum noise figure and associ ated gain vs. frequency (rbias = 1.2 k ) 0 5 10 15 20 25 30 0.8 0.9 1 1.1 1.2 1.3 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 frequency ? (ghz) nfmin gnf gnf nfmin minimum noise figure (db) associated gain (db) 0 5 10 15 20 25 30 0.8 0.9 1 1.1 1.2 1.3 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 frequency ? (ghz) nfmin gnf gnf nfmin minimum noise figure (db) associated gain (db)
application information mc13851 advance information, rev. 2.0 freescale semiconductor 9 figure 6 shows the icc current drain for a range of values for the external bias resistor rbias. figure 6. icc vs. bias resistor r1 value 3 application information the mc13851 lna is designed for appl ications in the 1000 mhz to 2.5 ghz range. it has three different modes: high gain, low gain (bypass) and standby. the lna is programmable through the gain and enable pins. the logic truth table is given in table 3 . the internal bypass switch is designed for broadband applications. one of the advantages of the mc13851 is the simplification of the matching network in both bypass and amplifier modes. the bypass switch is d esigned so that changes of input and output return losses between bypass mode and active mode are minimized and the matching network design is simplified. in these application examples a balance is made betw een the competing rf performance characteristics of icc, nf, gain, ip3 and return lo sses with unconditional stabil ity. conjugate matching is not used for the input or output. instead, matching wh ich achieves a trade-off in rf performance qualities is used. for a particular application or specification requirement, the matching can be changed to achieve enhanced performance of one para meter. measurements are made at a bias of vcc=2.75 v. frequency spacing for ip3 measurements is 200 khz. non-linear measure ments are made at pi n = -30 dbm. typical application circuits ar e provided for 1575 mhz, 1960 mhz, 2140 mhz and 2.4 ghz applications. typical rf performance is shown for two values of bias resistor r1: 1.2 k and 1.5 k . these two current drain levels offer variations in intercept point, gain and noise figure. included with each application are the schematics and electri cal performance. section 4, ?printed circuit and bill of materials ? provides the evaluation board layout and bill of material for the circuits. section 5, ?scattering and noise parameters ? provides smith charts with gain and noise circles fo r each application frequency. 3.1 1575 mhz application this application was designed to provide typical nf = 1.28 db, s21 ga in = 19 db, oip3 =14.5 dbm with return losses better than -10 db at 1575 mhz. typical performance that ca n be expected fr om this circuit at 2.75v is listed in table 6 . the component values can be change d to enhance the performance of a particular parameter, but usually at the expense of a nother. two values of bias resistor r1 are shown to y ? = ? 1.5497x 2 \ 7.6446x ? + ? 11.822 r2 ? = ? 0.981 2 2.5 3 3.5 4 4.5 5 1.1 1.3 1.5 1.7 1.9 2.1 rbias ? value ? (kohm) icc ? ma poly. ? (icc ? ma) icc (ma)
application information mc13851 advance information, rev. 2.0 10 freescale semiconductor demonstrate performance for different ip3 and icc re quirements. inductor l3 provides bias to the logic circuit. figure 7 is the 1575 mhz application schematic with p ackage pinouts and the circ uit component topology. figure 7. 1575 mhz application schematic table 6 shows the electrical characteristi cs for the 1575 mhz evaluation board. table 6. typical 1575 mhz evaluation board performance (vcc = 2.75v, t a = 25 c ) characteristic symbol min typ max unit r1=1.2 k frequency f ? 1575 ? mhz rf gain gdb high gain 18.4 19.4 ? bypass -6.5 -5.5 ? output third order intercept point oip3 dbm high gain 13.2 14.5 ? bypass 19 20.3 ? input third order intercept point iip3 dbm high gain -6.5 -5 ? bypass 24 25.5 ? out ref p1db p1dbout dbm high gain 6.3 7.4 ? in ref p1db p1dbin dbm high gain -13.3 -12 ? noise figure nf db high gain ? 1.28 1.6 bypass ? 6 7 current draw icc high gain ? 4.8 5.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.2 ? k rf ou t gain en able r3 15 0 l1 4.7 nh c1 22 pf c2 1 pf l2 5.1 nh c4 .0 1 uf c3 33 pf 6 1 3 2 ga in logic vcc rf in 7 5 gnd 4 8 en able rbias r1 1.2 k gnd r2 10 l3 270 nh
application information mc13851 advance information, rev. 2.0 freescale semiconductor 11 input return loss s11 db high gain ? -11 -8 bypass ? -11 -8 gain s21 db high gain 18 19 ? bypass -7 -5.5 ? reverse isolation s12 db high gain ? -27 -25 bypass ? -5.7 -4.4 output return loss s22 db high gain ? -14.9 -9 bypass ? -18 -9 r1=1.5 k frequency f ? 1575 ? mhz rf gain gdb high gain 18 19 ? bypass -6.5 -5.5 ? output third order intercept point oip3 dbm high gain 13.9 15.9 ? bypass 19 20.3 ? input third order intercept point iip3 dbm high gain -5.5 -3.2 ? bypass 24 26 ? out ref p1db p1dbout dbm high gain 6.6 7.6 ? in ref p1db p1dbin dbm high gain -13.5 -11.5 ? noise figure nf db high gain ? 1.27 1.6 bypass ? 5.9 6.9 current draw icc high gain ? 3.8 4.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.5 ? k input return loss s11 db high gain ? -10.6 -8.6 bypass ? -11.5 -10 gain s21 db high gain 17.9 18.9 ? bypass -6.5 -5.5 ? reverse isolation s12 db high gain ? -25.9 -24.5 bypass ? -5.6 -4.6 table 6. typical 1575 mhz evaluation board performance (continued) (vcc = 2.75v, t a = 25 c ) characteristic symbol min typ max unit
application information mc13851 advance information, rev. 2.0 12 freescale semiconductor 3.2 1960 mhz application these application circuits are designed to demonstr ate performance at 1960 mhz. typical results of nf = 1.4 db, s21 gain > 18 db and oip3 of 16 dbm. two values of bias resistor r1 are shown to demonstrate performance for different ip3 and icc re quirements. resistor r3 is used to de-q output inductor l2 and adjust ga in and return losses. inductor l3 provides bias to the logic circuit. reducing r3 lowers gain and improves return lo sses. typical performa nce that can be expected from this circuit at 2.75 v is listed in table 7 . figure 8 is the 1960 mhz applicat ion schematic with package pinouts and the ci rcuit component topology. figure 8. 1960 mhz application schematic table 7 shows the electrical characteristi cs for the 1960 mhz evaluation board. output return loss s22 db high gain ? -13 -9 bypass ? -18 -12 table 7. typical 1960 mhz evaluation board performance (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit r1=1.2 k frequency f ? 1960 ? mhz rf gain gdb high gain 17.7 18.7 ? bypass -6.5 -4.9 ? output third order intercept point oip3 dbm high gain 14 16 ? bypass 19.2 20.9 ? table 6. typical 1575 mhz evaluation board performance (continued) (vcc = 2.75v, t a = 25 c ) characteristic symbol min typ max unit rf ou t ga i n enable r3 620 l1 5.1 nh c1 2.4 pf c2 0.9 pf l2 3.3 nh c4 .01 uf c3 33 pf 6 1 3 2 gain lo gi c vcc rf in 7 5 gnd 4 8 enable rb ias r1 1.2 k gnd r2 10 l3 2 70 nh
application information mc13851 advance information, rev. 2.0 freescale semiconductor 13 input third order intercept point iip3 dbm high gain -4 -2.7 ? bypass 24.5 26 ? out ref p1db p1dbout dbm high gain 6 8 ? in ref p1db p1dbin dbm high gain -13 -10.5 ? noise figure nf db high gain ? 1.37 1.65 bypass ? 4.8 6.2 current draw icc high gain ? 4.8 5.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.2 ? k input return loss s11 db high gain ? -10 -7 bypass ? -11 -8 gain s21 db high gain 17.4 18.4 ? bypass -6.5 -5 ? reverse isolation s12 db high gain ? -25 -23.5 bypass ? -4.8 -3 output return loss s22 db high gain ? -14 -8 bypass ? -14.8 -10 r1=1.5 k frequency f ? 1960 ? mhz rf gain g high gain 17.5 18.5 ? db bypass -6.8 -5 ? output third order intercept point oip3 dbm high gain 16.1 17.1 ? bypass 19.1 20.9 ? input third order intercept point iip3 dbm high gain -3 -1.5 ? bypass 24.5 26 ? table 7. typical 1960 mhz evaluation board performance (continued) (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit
application information mc13851 advance information, rev. 2.0 14 freescale semiconductor 3.3 2140 mhz application these application circuits demonstrate performanc e at 2140 mhz. matching component values can be changed to enhance a particular parameter. typical performance expected from th is circuit at 2.75v vcc is listed in table 8 . two values of bias resistor r1 are shown to demonstrate performance for different ip3 and icc requirements. the same matching topology is used on each of the application circuits, with a highpass match on the output and a simple inductor-cap acitor network on the lna input. resistor r3 is used to de-q output inductor l2 and adjust gain and return losses. lowering the value of r3 lowers gain and improves return losses. out ref p1db p1dbout dbm high gain 5.6 8 ? in ref p1db p1dbin dbm high gain -13 -10.5 ? noise figure nf db high gain ? 1.35 1.65 bypass ? 4.9 6.2 current draw icc high gain ? 3.8 4.8 ma bypass ? 4 20 a rbias r1 value ??1.5?k input return loss s11 db high gain ? -9 -6.5 bypass ? -11 -8 gain s21 db high gain 17 18 ? bypass -6.5 -5 ? reverse isolation s12 db high gain ? -24.5 -22.5 bypass ? -4.5 -4 output return loss s22 db high gain ? -12.5 -7 bypass ? -15 -10 table 7. typical 1960 mhz evaluation board performance (continued) (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit
application information mc13851 advance information, rev. 2.0 freescale semiconductor 15 figure 9 is the 2140 mhz applicat ion schematic with package pinouts and the ci rcuit component topology. figure 9. 2140 mhz application schematic table 8 shows the electrical characteristi cs for the 2140 mhz evaluation board. table 8. typical 2140 mhz evaluation board performance (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit r1=1.2 k ( refer to figure 9 ) frequency f ? 2140 ? mhz rf gain g high gain 16.7 17.7 ? db bypass -5.8 -4.8 ? output third order intercept point oip3 dbm high gain 15.5 17.1 ? bypass 20 21 ? input third order intercept point iip3 dbm high gain -3 -0.5 ? bypass 24.5 25.7 ? out ref p1db p1db dbm high gain 6.7 8 ? in ref p1db p1db dbm high gain -11 -9.6 ? noise figure nf db high gain ? 1.46 1.75 bypass ? 4.9 5.9 current draw icc high gain ? 4.8 5.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.2 ? k rf out gain enabl e r3 620 l1 4.7 nh c1 2.4 pf c2 0.9 pf l2 2.7 nh c4 .01 u f c3 33 pf 6 1 3 2 gain logic vcc rf in 7 5 gnd 4 8 enable rbias r1 1.2 k gnd r2 10 l3 270 nh
application information mc13851 advance information, rev. 2.0 16 freescale semiconductor input return loss s11 db high gain ? -10.5 -7 bypass ? -13.5 -10 gain s21 db high gain 16.5 17.6 ? bypass -5.7 -4.7 ? reverse isolation s12 db high gain ? -24.7 -23.7 bypass ? -4.5 -4 output return loss s22 db high gain ? -11 -8 bypass ? -20.8 -10 r1=1.5 k (refer to figure 9 ) frequency f ? 2140 ? mhz rf gain gdb high gain 16.4 17.4 ? bypass -5.8 -4.8 ? output third order intercept point oip3 dbm high gain 16 18 ? bypass 19.5 21 ? input third order intercept point iip3 dbm high gain -2 0.9 ? bypass 24.7 25.7 ? out ref p1db p1db dbm high gain 7 8 ? in ref p1db p1db dbm high gain -10.3 -9.3 ? noise figure nf db high gain ? 1.46 1.75 bypass ? 4.7 5.3 current draw icc high gain ? 3.8 4.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.5 ? k input return loss s11 db high gain ? -9.6 -8 bypass ? -13 -9 table 8. typical 2140 mhz evaluation board performance (continued) (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit
application information mc13851 advance information, rev. 2.0 freescale semiconductor 17 3.4 2400 mhz application this application was designed to provide nf =1.5 db , s21 gain > 16 db, oip3 of 17.5 dbm with return losses better than -9 db at 2400 mhz. typical performanc e that can be expected fr om this circuit at 2.7v is listed in table 9 . two values of bias resistor r1 are shown to demonstrate performance for different ip3 and icc requirements. resistor r3 is used to de-q output inductor l2 and adjust gain and return losses. lowering the value of r3 lowers gain and improves return losses. figure 9 is the 2400 mhz application schematic with p ackage pinouts and the circ uit component topology. figure 10. 2400 mhz a pplication schematic gain s21 db high gain 16.5 17.4 ? bypass -5.4 -4.7 ? reverse isolation s12 db high gain ? -24 21.6 bypass ? -4.6 4.1 output return loss s22 db high gain ? -10.6 -8 bypass ? -21 -10 table 8. typical 2140 mhz evaluation board performance (continued) (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit
application information mc13851 advance information, rev. 2.0 18 freescale semiconductor table 9 shows the electrical characteristi cs for the 2400 mhz evaluation board. table 9. typical 2400 mhz evaluation board performance (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit r1=1.2 k (refer to figure 10 ) frequency f 2400 mhz rf gain gdb high gain 15 16 ? bypass -5.5 -5 ? output third order intercept point oip3 dbm high gain 16 17.5 ? bypass 18.5 20 ? input third order intercept point iip3 dbm high gain -0.2 1.3 ? bypass 24 25.3 ? out ref p1db p1db dbm high gain 7 8.1 ? in ref p1db p1db dbm high gain -9 -8 ? noise figure nf db high gain ? 1.51 1.8 bypass ? 5.2 5.8 current draw icc high gain ? 4.8 5.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.2 ? k input return loss s11 db high gain ? -12.5 -9 bypass ? -14 -10 gain s21 db high gain 14.7 15.7 ? bypass -5.4 -5 ? reverse isolation s12 db high gain ? -23.6 -22.6 bypass ? -5.5 -4.5 output return loss s22 db high gain ? -12 -9 bypass ? -22.5 -20
application information mc13851 advance information, rev. 2.0 freescale semiconductor 19 r1=1.5 k (refer to figure 10 ) frequency f ? 2400 ? mhz rf gain gdb high gain 14.9 15.9 ? bypass -6 -5 ? output third order intercept point oip3 dbm high gain 16 18 ? bypass 19.2 20.4 ? input third order intercept point iip3 dbm high gain -0.2 2 ? bypass 24.3 25.3 ? out ref p1db p1db dbm high gain 7 7.9 ? in ref p1db p1db dbm high gain -8.8 -7.8 ? noise figure nf db high gain ? 1.52 1.8 bypass ? 5.2 6 current draw icc high gain ? 3.8 4.8 ma bypass ? 4 20 a rbias r1 value ? ? 1.5 ? k input return loss s11 db high gain ? -10.7 -9 bypass ? -14.5 -12 gain s21 db high gain 14.4 15.4 ? bypass -6 -5.1 ? reverse isolation s12 db high gain ? -23.3 -22 bypass ? -5.5 -4.5 output return loss s22 db high gain ? -11.3 -8.5 bypass ? -21.9 -15 table 9. typical 2400 mhz evaluation board performance (continued) (vcc = 2.75v, ta = 25c) characteristic symbol min typ max unit
printed circuit and bill of materials mc13851 advance information, rev. 2.0 20 freescale semiconductor 4 printed circuit and bill of materials figure 11 is the drawing of th e printed circuit board. figure 13 is the drawing of th e evaluation board used for each of the application fr equency designs described in section 3, ?application information .? these drawings show the boards with the circuit matching components pla ced and identified. figure 11. printed circuit board figure 11 is a picture of a typical assem bled evaluation board similar to the ones in the evaluation kits. figure 12. typical assembled evaluation board with sma connectors note: dimensions are in inches and [mm]. soldering note: the center flag under the part must be soldered to board.
printed circuit and bill of materials mc13851 advance information, rev. 2.0 freescale semiconductor 21 figure 13. 1575-, 1960-, 2140-, 2400 mhz application board the bill of materials for each of the application frequency circuit boards is listed in table 10 . the value, case size, manufacturer and circuit f unction of each component are shown. table 10. bill of materials for the application circuit boards component value case manufacturer comments 1575 mhz application circuit (see figure 7 ) c1 22 pf 402 murata dc block, input match c2 1 pf 402 murata dc block, output match c3 33 pf 402 murata rf bypass c4 0.1 f 402 murata low frequency bypass l1 4.7 nh 402 murata input match l2 5.1 nh 402 murata output match, bias decouple l3 270 nh 402 murata bias couple to logic r1 1.2 k 402 koa bias set point r2 10 402 koa stability r3 150 402 koa l2 de-q, gain adjust 1900 mhz application circuit (see figure 8 ) c1 2.4pf 402 murata input match c2 0.9 pf 402 murata output match c3 33 pf 402 murata rf bypass c4 .01 f 805 murata low frequency bypass l1 5.1 nh 402 murata input match l2 3.3 nh 402 murata output match l3 270 nh 402 murata bias couple to logic r1 1.2 k 402 koa lna bias r2 15 402 koa stability r3 620 402 koa de-q l2, adjust gain, rls
scattering and noise parameters mc13851 advance information, rev. 2.0 22 freescale semiconductor 5 scattering and noise parameters table 11 through table 14 list the s parameters for the packaged part in a 50 system for each of the modes of operation and for two values of the external bias resistor. 2140 mhz application circuit (see figure 9 ) c1 2.4pf 402 murata input match c2 0.9 pf 402 murata output match c3 33 pf 402 murata rf bypass c4 .01 f 805 murata low frequency bypass l1 4.7 nh 402 murata input match l2 2.7 402 murata output match l3 270 nh 402 murata bias couple to logic r1 1.2 k 402 koa lna bias r2 10 402 koa stability r3 620 402 koa de-q l2, adjust gain, rls 2400 mhz application circuit (see figure 10 ) c1 2.4pf 402 murata input match c2 0.9 pf 402 murata output match c3 33 pf 402 murata rf bypass c4 .01 f 805 murata low frequency bypass l1 3.6 nh 402 murata input match l2 2 402 murata output match l3 270 nh 402 murata bias couple to logic r1 1.2 k 402 koa lna bias r2 10 402 koa stability r3 620 402 koa de-q l2, adjust gain, rls table 11. scattering parameters, active mode, rbias=1.2k (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 1000 0.712 -19.7 10.508 145.3 0.027 94.1 0.913 9.6 1050 0.696 -20.3 10.318 144.3 0.029 94.3 0.904 10.0 1100 0.679 -21.2 10.132 143.1 0.030 94.8 0.896 10.5 1150 0.663 -21.7 9.947 142.2 0.031 94.8 0.886 10.7 1200 0.651 -21.9 9.742 141.0 0.033 95.1 0.875 10.8 1250 0.634 -22.2 9.552 140.2 0.034 95.6 0.870 11.0 1300 0.619 -22.4 9.413 139.3 0.035 96.4 0.861 11.2 table 10. bill of materials for the application circuit boards (continued) component value case manufacturer comments
scattering and noise parameters mc13851 advance information, rev. 2.0 freescale semiconductor 23 1350 0.607 -22.9 9.242 138.3 0.036 97.3 0.854 11.5 1400 0.597 -23.3 9.069 138.0 0.038 98.5 0.851 11.6 1450 0.587 -23.6 8.977 137.0 0.040 99.3 0.847 11.4 1500 0.576 -23.9 8.813 136.2 0.042 100.3 0.845 11.1 1550 0.571 -24.4 8.806 135.9 0.044 101.5 0.846 10.2 1600 0.571 -26.2 8.693 134.7 0.049 100.1 0.840 8.2 1650 0.556 -28.2 8.583 133.0 0.050 97.4 0.802 7.2 1700 0.538 -29.7 8.420 131.8 0.051 96.5 0.779 7.4 1750 0.519 -31.3 8.284 130.8 0.052 96.4 0.764 7.2 1800 0.505 -33.5 8.129 129.5 0.054 96.1 0.751 6.8 1850 0.486 -35.7 8.009 128.3 0.057 95.2 0.737 5.6 1900 0.448 -37.5 7.735 126.4 0.058 91.7 0.700 5.2 1950 0.435 -37.8 7.564 126.2 0.058 92.2 0.688 5.5 2000 0.415 -41.7 7.421 124.4 0.061 90.4 0.662 4.1 2050 0.376 -45.4 7.155 122.5 0.063 86.6 0.618 3.7 2100 0.313 -44.8 6.708 121.6 0.059 80.1 0.569 6.2 2150 0.28 -37.0 6.321 121.8 0.052 79.7 0.541 11.7 2200 0.251 -29.5 5.956 125.2 0.044 78.1 0.561 18.1 2250 0.309 -16.2 6.073 130.1 0.037 100.5 0.648 20.3 2300 0.367 -24.7 6.554 129.3 0.050 110.1 0.694 14.8 2350 0.364 -30.5 6.756 126.9 0.058 108.1 0.678 9.3 2400 0.351 -35.0 6.542 124.4 0.062 104.0 0.648 8.3 2450 0.338 -37.9 6.459 122.8 0.065 102.4 0.627 7.8 2500 0.323 -40.5 6.304 121.6 0.066 100.3 0.613 8.1 2550 0.319 -41.4 6.168 120.6 0.067 100.7 0.608 8.1 2600 0.308 -43.6 6.047 119.6 0.068 99.4 0.606 7.1 table 12. scattering parameters, active mode, rbias=1.5k (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 1000 0.754 -17.9 9.171 150.9 0.028 94.9 0.941 10.7 1050 0.739 -18.6 9.055 149.8 0.029 95.2 0.933 11.1 1100 0.721 -19.4 8.902 148.7 0.031 95.0 0.927 11.7 1150 0.709 -19.9 8.774 147.9 0.032 95.4 0.918 11.8 1200 0.698 -20.3 8.629 146.8 0.033 95.6 0.910 12.0 1250 0.682 -20.6 8.517 146.2 0.035 96.3 0.907 12.2 table 11. scattering parameters, active mode, rbias=1.2k (continued) (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13851 advance information, rev. 2.0 24 freescale semiconductor 1300 0.667 -21.2 8.444 145.1 0.036 96.3 0.897 12.2 1350 0.654 -21.9 8.318 144.0 0.037 96.4 0.888 12.4 1400 0.640 -22.5 8.150 143.8 0.039 97.1 0.884 12.6 1450 0.625 -22.8 8.093 142.6 0.040 97.3 0.876 12.6 1500 0.611 -23.0 7.908 141.9 0.041 97.6 0.871 12.6 1550 0.595 -23.1 7.910 141.3 0.043 98.2 0.863 12.2 1600 0.591 -23.1 7.668 140.8 0.044 98.5 0.861 11.8 1650 0.586 -24.0 7.619 139.9 0.046 99.0 0.841 11.5 1700 0.577 -25.1 7.505 139.2 0.048 99.0 0.829 11.8 1750 0.560 -26.7 7.410 138.5 0.049 99.1 0.821 11.9 1800 0.548 -28.0 7.283 137.6 0.050 99.4 0.813 11.7 1850 0.528 -28.8 7.154 136.9 0.052 99.6 0.807 11.5 1900 0.513 -28.8 7.006 136.3 0.053 98.7 0.794 11.4 1950 0.509 -29.0 6.929 136.3 0.054 99.8 0.789 11.5 2000 0.500 -31.2 6.861 135.6 0.056 100.1 0.781 11.1 2050 0.489 -32.4 6.832 134.8 0.058 101.1 0.773 10.7 2100 0.475 -33.9 6.707 134.5 0.060 100.5 0.770 10.2 2150 0.467 -34.2 6.660 133.1 0.062 101.1 0.750 9.6 2200 0.454 -37.8 6.588 133.3 0.063 99.6 0.745 9.2 2250 0.436 -39.4 6.538 132.1 0.065 100.1 0.730 8.6 2300 0.409 -41.7 6.508 130.5 0.066 98.0 0.714 8.4 2350 0.390 -40.9 6.467 129.7 0.067 98.2 0.693 7.3 2400 0.378 -41.5 6.181 128.3 0.067 97.2 0.671 8.6 2450 0.369 -42.2 6.079 127.5 0.068 97.5 0.659 9.7 2500 0.359 -43.2 5.945 126.8 0.068 97.6 0.651 10.7 2550 0.356 -44.0 5.825 126.3 0.069 97.8 0.652 11.4 2600 0.348 -44.7 5.680 125.7 0.069 98.1 0.652 11.9 table 13. scattering parameters, bypass mode, rbias=1.2k and 1.5k (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 1000 0.356 -25.9 0.658 25.8 0.646 25.2 0.402 -12.4 1050 0.340 -24.6 0.663 24.9 0.651 24.3 0.387 -11.3 1100 0.327 -23.0 0.667 24.0 0.655 23.5 0.373 -9.9 1150 0.312 -21.4 0.671 23.3 0.659 22.7 0.359 -8.2 1200 0.298 -20.3 0.674 22.6 0.662 22.0 0.347 -6.5 table 12. scattering parameters, active mode, rbias=1.5k (continued) (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13851 advance information, rev. 2.0 freescale semiconductor 25 1250 0.288 -18.7 0.677 21.8 0.665 21.4 0.336 -4.7 1300 0.275 -16.7 0.678 21.2 0.667 20.7 0.326 -3.4 1350 0.263 -14.8 0.679 20.6 0.668 20.1 0.318 -1.9 1400 0.253 -12.6 0.678 20.0 0.667 19.6 0.311 -0.7 1450 0.248 -10.0 0.675 19.9 0.664 19.5 0.306 -0.3 1500 0.250 -9.6 0.680 20.0 0.669 19.6 0.289 0.9 1550 0.244 -10.4 0.687 19.5 0.676 19.1 0.279 2.1 1600 0.235 -10.0 0.689 18.9 0.678 18.5 0.272 3.7 1650 0.226 -10.2 0.690 18.5 0.680 18.0 0.267 4.9 1700 0.220 -9.5 0.690 17.8 0.680 17.3 0.260 6.3 1750 0.211 -8.5 0.689 17.4 0.679 17.0 0.253 6.9 1800 0.197 -6.2 0.685 16.9 0.675 16.4 0.245 6.8 1850 0.199 -1.7 0.682 17.3 0.673 16.9 0.235 7.3 1900 0.202 -3.2 0.688 17.0 0.679 16.6 0.229 8.5 1950 0.194 -5.0 0.688 16.5 0.678 16.1 0.223 9.4 2000 0.186 -4.4 0.687 16.1 0.677 15.8 0.213 8.4 2050 0.182 -3.6 0.682 16.2 0.673 15.8 0.204 8.1 2100 0.180 -4.2 0.686 16.3 0.676 15.9 0.198 9.5 2150 0.185 -4.3 0.689 16.2 0.680 15.9 0.192 11.2 2200 0.185 -5.5 0.695 15.7 0.685 15.4 0.186 10.4 2250 0.187 -8.3 0.695 15.2 0.685 14.9 0.185 9.3 2300 0.186 -10.1 0.697 14.6 0.688 14.3 0.178 7.5 2350 0.185 -12.0 0.694 14.2 0.685 13.8 0.173 7.0 2400 0.181 -14.1 0.696 13.7 0.686 13.4 0.168 4.1 2450 0.178 -16.8 0.695 13.1 0.681 12.5 0.159 2.0 2500 0.177 -19.8 0.694 12.5 0.680 11.9 0.155 -1.7 2550 0.174 -23.6 0.691 11.8 0.677 11.2 0.150 -5.6 2600 0.171 -27.4 0.686 11.2 0.673 10.6 0.143 -9.1 table 14. scattering parameters, standby mode, rbias=1.2k and 1.5k (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 1000 0.939 2.1 0.031 104.0 0.031 103.1 0.991 12.9 1050 0.935 2.2 0.033 104.4 0.033 103.8 0.990 13.3 1100 0.934 2.5 0.035 104.8 0.034 104.2 0.988 13.5 1150 0.931 2.7 0.037 105.2 0.036 104.4 0.986 14.0 table 13. scattering parameters, bypass mode, rbias=1.2k and 1.5k (continued) (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13851 advance information, rev. 2.0 26 freescale semiconductor table 15 provides the active mode noise paramete rs when the bias resistor is 1.2 k . 1200 0.926 2.7 0.039 105.4 0.038 104.7 0.985 14.5 1250 0.924 2.6 0.041 105.8 0.040 105.2 0.982 15.0 1300 0.920 2.8 0.043 105.8 0.042 105.3 0.978 15.0 1350 0.914 2.9 0.045 106.1 0.044 105.5 0.977 15.2 1400 0.906 2.9 0.047 106.4 0.046 105.9 0.974 15.5 1450 0.896 3.3 0.048 106.9 0.048 106.2 0.973 15.7 1500 0.901 3.7 0.051 108.4 0.050 107.8 0.969 16.0 1550 0.907 3.3 0.054 108.6 0.053 107.9 0.965 15.9 1600 0.904 2.9 0.056 108.4 0.056 108.0 0.964 15.9 1650 0.900 2.4 0.059 108.8 0.058 108.3 0.959 16.1 1700 0.896 1.7 0.061 109.2 0.061 108.6 0.957 16.2 1750 0.886 1.3 0.064 109.7 0.063 109.2 0.954 16.1 1800 0.871 1.1 0.068 111.0 0.067 110.4 0.948 15.7 1850 0.859 2.3 0.074 109.8 0.073 109.4 0.946 15.7 1900 0.871 2.1 0.075 108.1 0.074 107.5 0.941 15.4 1950 0.866 1.0 0.078 109.2 0.076 108.7 0.935 15.3 2000 0.855 0.4 0.081 109.1 0.080 108.9 0.929 15.0 2050 0.843 0.5 0.086 110.1 0.085 109.8 0.923 14.3 2100 0.844 0.3 0.093 108.8 0.092 108.4 0.920 14.2 2150 0.848 -0.2 0.100 106.5 0.099 106.0 0.916 14.0 2200 0.853 -0.9 0.103 103.2 0.101 102.8 0.911 13.2 2250 0.853 -2.1 0.105 101.6 0.104 101.0 0.907 12.4 2300 0.850 -3.1 0.106 99.8 0.105 99.4 0.901 11.6 2350 0.844 -3.9 0.110 99.2 0.109 98.7 0.891 10.8 2400 0.838 -5.1 0.113 97.0 0.111 96.4 0.887 9.9 2450 0.829 -6.5 0.116 96.2 0.114 95.2 0.877 8.9 2500 0.820 -7.9 0.119 93.5 0.117 92.6 0.867 7.6 2550 0.807 -9.4 0.122 91.3 0.120 90.6 0.858 6.1 2600 0.791 -11.2 0.125 88.1 0.122 87.4 0.840 4.9 table 15. active mode noise parameters, rbias=1.2k (vcc = 2.75v, 25 0c, 50 system, icc=4.6 ma) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle 1000 0.91 0.329 -8.8 14.0 27.42 1200 0.92 7.000 -7.3 13.5 25.09 table 14. scattering parameters, standby mode, rbias=1.2k and 1.5k (continued) (vcc = 2.75v, 25c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters mc13851 advance information, rev. 2.0 freescale semiconductor 27 table 16 provides the active mode noise paramete rs when the bias resistor is 1.5 k . 1500 0.96 0.279 -12.3 12.5 22.83 1700 0.99 0.244 -17.2 12 21.43 1900 1.02 0.206 -20.8 11.5 20.15 2000 1.04 0.186 -21.5 11.5 19.57 2100 1.06 0.167 -20.9 11.0 19.04 2400 1.13 0.114 -9.6 11.0 17.74 2500 1.15 0.100 -1.6 10.5 17.43 2600 1.18 0.087 8.8 10.5 17.18 table 16. active mode noise parameters, rbias=1.5k (vcc = 2.75v, 25c, 50 system, icc=3.3 ma) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle 1000 0.92 0.358 -8.3 14.5 26.42 1200 0.93 0.344 -8.7 14.0 24.84 1500 0.97 0.306 -12.5 13.5 22.78 1700 1.00 0.273 -15.2 13.0 21.59 1900 1.04 0.237 -16.6 12.0 20.53 2000 1.06 0.218 -16.4 12.0 20.03 2100 1.08 0.199 -15.4 12.0 19.57 2400 1.16 0.143 -5.5 11.5 18.30 2500 1.19 0.127 0.6 11.5 17.91 2600 1.23 0.111 8.3 11.5 17.53 table 15. active mode noise parameters, rbias=1.2k (continued) (vcc = 2.75v, 25 0c, 50 system, icc=4.6 ma) freq (mhz) fmin (db) gamma opt rn ga (db) mag angle
scattering and noise parameters mc13851 advance information, rev. 2.0 28 freescale semiconductor figure 14 through figure 21 are the constant noise figure and gain ci rcles with input and output stability regions shown on smith charts. gamma opt, noise resist ance and stability at the frequency are shown for two values of the external bias r esistor at 1600-, 1950-, 2150- and 2400 mhz. figure 14. constant noise figure and gain circles, 1600 mhz, rbias=1.2 k figure 15. constant noise figure and gain circles, 1600 mhz, rbias=1.5k
scattering and noise parameters mc13851 advance information, rev. 2.0 freescale semiconductor 29 figure 16. constant noise figure and gain circles, 1960 mhz, rbias=1.2 k figure 17. constant noise figure and gain circles, 1960 mhz, rbias=1.5k
scattering and noise parameters mc13851 advance information, rev. 2.0 30 freescale semiconductor figure 18. constant noise figure and gain circles, 2140 mhz, rbias=1.2 k figure 19. constant noise figure and gain circles, 2140 mhz, rbias=1.5k
scattering and noise parameters mc13851 advance information, rev. 2.0 freescale semiconductor 31 figure 20. constant noise figure and gain circles, 2400 mhz, rbias=1.2 k figure 21. constant noise figure and gain circles, 2400 mhz, rbias=1.5k
packaging mc13851 advance information, rev. 2.0 32 freescale semiconductor 6 packaging figure 22 and figure 22 are the package drawings with dimensions for the mlpd-8, 2 2 0.6 mm, package. figure 22. outline dimensions for mlpd-8 detail g (see figure 23 )
product documentation mc13851 advance information, rev. 2.0 freescale semiconductor 33 figure 23. package details 7 product documentation this data sheet is labele d as a particular type: product preview, advance information, or technical data. definitions of these types are avai lable at: http://www.freescale.com. 8 revision history table 17 summarizes revisions to this documen t since the previous release (rev. 1). table 17. revision history location revision throughout document changed package from mlf8 to mlpd-8 section 2, ?electrical specifications complete revision section 3, ?application information complete update to application information section 3.4, ?2400 mhz application new 2400 mhz content. section 4, ?printed circuit and bill of materials complete update to mlpd-8 package. section 5, ?scattering and noise parameters added section and all content.
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