document number 88351 www.vishay.com 20-may-02 1 zener diodes v z range 5.1 to 10v power dissipation 200mw .006 (0.15) max. .010 (0.25) min. .012 (0.3) .076 (1.95) .112 (2.85) .059 (1.5) .004 (0.1) max. .049 (1.25) max. cathode band to p v i ew .100 (2.55) .065 (1.65) .043 (1.1) mounting pad layout maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit power dissipation pd 200 mw junction temperature t j 150 c storage temperature range t stg 55 to + 150 c features silicon planar power zener diodes low zener impedence and low leakage current popular in asian designs compact surface mount device ideal for automated mounting complies with iec 61000-4-2 for esd protection mechanical data case: sod-323 plastic package weight: approx. 0.004g marking codes: see table on next page packaging codes/options: d5/10k per 13 reel (8mm tape) d6/3k per 7 reel (8mm tape) 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) sod-323 dimensions in inches and (millimeters) gtz series for esd protection vishay semiconductors formerly general semiconductor new product
www.vishay.com document number 88351 2 20-may-02 electrical characteristics (t a = 25 c unless otherwise noted) marking zener voltage esd- type code v z (v) (1) i zt (ma) reverse current dynamic resistance capability (2) min max i r(max) ( a) v rt (v) r d(max) ( ? )i zt (ma) (kv) (min) gtz5.1 g1 4.84 5.37 5 5 1.5 130 5 30 gtz5.6 g2 5.31 5.92 5 5 2.5 80 5 30 gtz6.2 g3 5.86 6.53 5 2 3.0 50 5 30 gtz6.8 g4 6.47 7.14 5 2 3.5 30 5 30 gtz7.5 g5 7.06 7.84 5 2 4.0 30 5 30 gtz8.2 g6 7.76 8.64 5 2 5.0 30 5 30 gtz9.1 g7 8.56 9.55 5 2 6.0 30 5 30 gtz10 g8 9.45 10.55 5 2 7.0 30 5 30 notes: (1) tested with pulse (pw = 40ms). (2) c = 150pf, r = 330 ohms, both forward and reverse direction 10 pulse (contact mode) gtz series for esd protection vishay semiconductors formerly general semiconductor
document number 88351 www.vishay.com 20-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) gtz series for esd protection vishay semiconductors formerly general semiconductor i z (ma) fig. 1 ? v z vs i z (gtz6v8) 0.1 1 10 100 6.6 6.8 7 v z (v) 7.2 7.4 r z ( ? ) fig. 3 ? r z vs i z (gtz6v8) 0.1 1 10 100 1000 02040 i z (ma) 60 80 100 i f (ma) 0.1 0.01 1 10 100 300 400 500 v f (mv) 600 700 800 900 1000 fig. 5 ? v f vs i f (gtz6v8) i z (ma) 0.1 1 10 100 8.6 8.8 9 v z (v) 9.2 9.4 9.6 9.8 10 10.2 fig. 2 ? v z vs i z (gtz9v1) 20 40 60 80 100 fig. 4 ? r z vs i z (gtz9v1) r z ( ? ) 0.1 1 0 i z (ma) 10 100 i f (ma) 0.1 0.01 1 10 100 300 400 500 v f (mv) 600 700 800 900 1000 fig. 6 ? v f vs i f (gtz9v1) t j = 25 c t j = 85 c t j = 100 c t j = 150 c t j = 150 c t j = 25 c t j = 100 c t j = 150 c t j = 25 c t j = 100 c t j = 85 c t j = 25 c t j = 150 c t j = 85 c t j = 100 c t j = 150 c t j = 25 c t j = 100 c t j = 150 c t j = 25 c t j = 100 c t j = 85 c
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