table 1: 9 m units metal pitch (width/space) 8 / 5 m m contact 8 x 8 m m gate geometry 9 m m p-well junction depth 9 m m n+ junction depth 2.4 m m p+ junction depth 2.6 m m gate oxide thickness 1050 ? 9 micron - 15 volts units conditions n channel min. typ. max. p channel min. typ. max. vt (50 x 9 m m) 1.0 1.3 1.6 1.6 1.9 2.2 v saturation ids (50 x 9 m m) 200 60 a/m vds=vgs=3v gain b (50 x 9 m m) 700 200 a/v 2 bvdss 20 28 20 30 v ids=1a field threshold 23 20 v ids=1a l effective 5.2 4.8 m l drawn = 9m mosfet electrical parameters 9 micron -15 volts min. typ. max. pwell 1500 n+ 35 45 55 p+ 40 70 100 metal i 0.038 resistances ( w / sq.) features ? metal gate process ?13 m metal pitch ?16 volts maximum operating voltage ? simple process (7 masks) ? very short cycle time ? very high yield description the 9 m m process is a cmos process with an operating voltage range from 5 to 16 volts. the gate material is metal; which is common in many mature designs. an advantage of this process is its simplicity and its short cycle time. 9micron metalgate cmos process process parameters for more information: dalsa semiconductor sales tel : (450) 534-2321 ext. 1448 18 boulevard de l?aroport (800) 718-9701 bromont, qubec, canada fax (450) 534-3201 j2l 1s7 email: dalsasales@dalsasemi.com www.dalsasemi.com
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