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| savantic semiconductor product specification silicon pnp power transistors 2N6132 2n6133 2n6134 description with to-220 package high power dissipation complement to npn type : 2n6129 2n6130 2n6131 applications power amplifier and medium speed switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2N6132 -40 2n6133 -60 v cbo collector- base voltage 2n6134 open emitter -80 v 2N6132 -40 2n6133 -60 v ceo collector- emitter voltage 2n6134 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i b base current -3 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.5 /w fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N6132 2n6133 2n6134 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6132 -40 2n6133 -60 v ceo(sus) collector-emitter sustaining voltage 2n6134 i c =-0.1a ;i b =0 -80 v 2N6132 2n6133 -1.4 v cesat collector-emitter saturation voltage 2n6134 i c =-7a;i b =-1.2a -1.8 v v be base-emitter on voltage i c =-2.5a ; v ce =-4v -1.4 v 2N6132 v ce =-40v;v be =1.5v t c =150 -0.5 -3.0 2n6133 v ce =-60v;v be =1.5v t c =150 -0.5 -3.0 ma i cev collector cut-off current 2n6134 v ce =-80v; v be =1.5v t c =150 -0.5 -3.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe dc current gain i c =-2.5a ; v ce =-4v 20 100 f t transition frequency i c =-0.2a ; v ce =-4v 2.5 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2N6132 2n6133 2n6134 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
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