2sK3767 2004-12-10 1 toshiba field effect transistor silicon n channel mos type ( -mosvi) 2sK3767 switching regulator applications ? low drain-source on resistance: r ds (on) = 3.3 (typ.) ? high forward transfer admittance: |y fs | = 1.6s (typ.) ? low leakage current: i dss = 100 a (v ds = 600 v) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v drain-gate voltage (r gs = 20 k ? ) v dgr 600 v gate-source voltage v gss 30 v dc (note 1) i d 2 drain current pulse (note 1) i dp 5 a drain power dissipation (tc = 25c) p d 25 w single pulse avalanche energy (note 2) e as 93 mj avalanche current i ar 2 a repetitive avalanche energy (note 3) e ar 4 mj channel temperature t ch 150 c storage temperature range t stg -55~150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 5.0 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: ensure that the channel temperature does not exceed 150 . note 2: v dd = 90 v, t ch = 25c initial , l = 41mh, r g = 25 ? , i ar = 2 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. please handle with caution. unit: mm 1: gate 2: drain 3: source jedec D jeita sc-67 toshiba 2-10u1b weight : 1.7 g (typ.) 1 3 2 .com .com .com 4 .com u datasheet
2sK3767 2004-12-10 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 10 a, v ds = 0 v 30 ? ? v drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 1 a ? 3.3 4.5 ? forward transfer admittance ? y fs ? v ds = 10 v, i d = 1 a 0.8 1.6 ? s input capacitance c iss ? 320 ? reverse transfer capacitance c rss ? 30 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 100 ? pf rise time t r ? 15 ? turn-on time t on ? 55 ? fall time t f ? 20 ? switching time turn-off time t off ? 80 ? ns total gate charge q g ? 9 ? gate-source charge q gs ? 5 ? gate-drain charge q gd v dd ? = 10 v, i d = 2a ? 4 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 2 a pulse drain reverse current (note 1) i drp ? ? ? 5 a forward voltage (diode) v dsf i dr = 2 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 1000 ? ns reverse recovery charge q rr i dr = 2 a, v gs = 0 v, di dr /dt = 100 a/ s ? 3.5 ? c marking 10 v i d = 1a output duty < = = 10 s r l = 0 v v gs v dd ? ? 200 ? lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. K3767 part no. (or abbreviation code) .com .com .com .com 4 .com u datasheet
2sK3767 2004-12-10 3 0 0 2 4 6 8 10 2 5 ? 55 25 tc=100 3 1 4 gate-source voltage v gs (v) i d ? v gs drain current i d (a) common source v ds = 20 v pulse test 0 12 16 20 0 i d = 2a 4 12 16 20 0.5 1 8 4 8 drain current voltage v ds (v) gate source voltage v gs (v) v ds ? v gs common source tc = 25 pulse test 4 3 2 1 0 0 8 20 4.5 4.75 5.25 10 5 16 12 4 6 5.5 drain-source voltage v ds (v) i d ? v ds drain current i d (a) common source tc = 25c pulse test 24 v gs = 4v 0.01 1 10 25 100 tc = ? 55c 1 10 drain current i d (a) ? ? = 20 v pulse test forward transfer admittance ? ? ? ) common source tc = 25c pulse test vgs=10v 0.01 1 10 1 100 10 0.1 2 1.2 0.8 0 1.6 0.4 0 4 8 12 16 v gs = 4v 4.5 5 4.75 5.25 6 10 20 5.5 drain-source voltage v ds (v) i d ? v ds drain current i d (a) 24 common source tc = 25c pulse test .com .com .com .com 4 .com u datasheet
2sK3767 2004-12-10 4 1 0.1 10 100 1000 1 10 100 c iss c oss c rss drian-source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz tc = 25c 200 -50 0 50 100 150 -100 8 6 4 2 0 1 i d =2a 0.5 case temperature (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ? ) common source v gs = 10v pulse test 10 50 0 0 40 10 20 80 120 160 30 drain power dissipation p d (w) case temperature tc (c) p d ? tc 40 0 0.01 0.1 1 10 ? 0.8 ? 1.6 v gs = 0, ? 1 v 10 1 ? 0.4 ? 1.2 drain-source voltage (v) i dr ? v ds drain reverse current i dr (a) common source tc = 25c pulse test 3 0 1 2 3 5 ? 40 0 40 80 120 150 4 gate threshold voltage v th (v) case temperature tc (c) v th ? tc common source v ds = 10 v i d = 1 ma pulse test 6 ? 80 gate-source voltage v gs (v) total gate charge q g (nc) dynamic input / output characteristics drain-source voltage v ds (v) common source i d = 7.5 a tc = 25c pulse test 800 400 200 0 600 12 8 4 0 16 0 2 10 12 4 6 8 v dd = 400v 100v 200v .com .com .com .com 4 .com u datasheet
2sK3767 2004-12-10 5 ? 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 41mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as 160 120 80 40 0 25 50 75 100 125 150 channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) 200 darin-source voltage v ds (v) safe o p eratin g area single nonrepetitive pulse tc = 2 5 curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max (continuous) * dc operation tc = 25c 100 s * 1 ms * v dss max drain current i d (a) 100 10 1 0.1 0.01 1000 100 10 1 0.01 0.1 10 0.001 10 100 1 10 100 1 10 0.2 0.1 0.01 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) duty=0.5 single pulse 0.003 0.03 1 0.02 0.05 t p dm t duty = t/t r th (ch-c) = 5 /w 3 0.3 .com .com .com .com 4 .com u datasheet
2sK3767 2004-12-10 6 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use .com .com .com 4 .com u datasheet
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