1985 data sheet silicon transistors 2sd1615, 2sd1615a document no. d10198ej4v0ds00 (4th edition) date published december 2000 n cp(k) printed in japan npn silicon epitaxial transistors power mini mold description 2sd1615, 1615a are designed for audio frequency power amplifier and switching application, especially in hybrid integrated circuits. features ? world standard miniature package ? low v ce (sat) v ce(sat) = 0.15 v ? complement to 2sb1115, 2sd1115a absolute maximum ratings maximum voltages and currents (t a = 25 c) 2sd1615 2sd1615a collector to base voltage v cbo 60 120 v collector to emitter voltage v ceo 50 60 v emitter to base voltage v ebo 6v collector current (dc) i c 1a collector current (pulse) * i c 2a maximum power dissipation total power dissipation at 25 c ambient temperature ** p t 2.0 w maximum temperatures junction temperature t j 150 c storage temperature range t stg C55 to +150 c * pw 10 ms, duty cycle 50% ** when mounted on ceramic substrate of 16 cm 2 0.7 mm electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 100 na 2sd1615 v cb = 60 v, i e = 0 100 na 2sd1615a v cb = 120 v, i e = 0 emitter cutoff current i ebo 100 na v eb = 6.0 v, i c = 0 dc current gain h fe1 *** 135 290 600 2sc1615 v ce = 2.0 v, i c = 100 ma 135 400 2sd1615a dc current gain h fe2 *** 81 270 v ce = 2.0 v, i c = 1.0 a collector saturation voltage v ce(sat) *** 0.15 0.3 v i c = 1.0 a, i b = 50 ma base saturation voltage v be(sat) *** 0.9 1.2 v i c = 1.0 a, i b = 50 ma base to emitter voltage v be *** 600 700 mv v ce = 2.0 v, i c = 50 ma gain bandwidth product f t 80 160 mhz v ce = 2.0 v, i e = C100 ma output capacitance c ob 19 pf v cb = 10 v, i e = 0, f = 1.0 mhz *** pulsed: pw 350 m s, duty cycle 2 % h fe classification marking 2sd1615 gm gl gk 2sd1615a gq gp h fe 135 to 270 200 to 400 300 to 600 package dimensions in millimeters c eb 4.5 0.1 1.6 0.2 0.42 0.06 0.42 0.06 1.5 0.1 2.5 0.1 0.8 min. 4.0 0.25 1.5 3.0 0.41 + 0.03 0.05 1. emitter 2. collector 3. base 0.47 0.06 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version.
2 2sd1615, 2sd1615a data sheet d10198ej4v0ds00 typical characteristics (t a = 25 c) when mounted on ceramic substrate of 16 cm 2 0.7 mm t a ?ambient temperature ? c 0 40 80 120 160 200 2.5 2.0 1.5 1.0 0.5 p t ?total power dissipation ?w total power dissipation vs. ambient temperature 100 80 60 40 20 0246810 300 a m 200 a m 200 a m 150 a m 100 a m i b = 50 a m collector current vs. base to emitter voltage v ce ?collector to emitter voltage ?v i c ?collector current ?ma 1000 500 200 100 50 20 10 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 i c ?collector current ?a dc current gain vs. collector current h ef ?dc current gain v ce = 2.0 v 1.0 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 3.0 ma 2.5 ma 2.0 ma 1.5 ma 1.0 ma i b = 0.5 ma collector current vs. collector to emitter voltage v ce(sat) ?collector saturation voltage ?v i c ?collector current ?a 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 i c ?collector current ?a collector and base saturation voltage vs. collector current v ce(sat) ?collector saturation voltage ?v v be(sat) ?base saturation voltage ?v 3.5 ma 4.0 ma 5.0 ma 4.5 ma i c = 20? b v ce(sat) v be(sat) safe operating area (transient thermal resistance method) 1 pulse 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 1 2 5 10 20 50 100 v ce ?collector to emitter voltage ?v i c ?collector current ?a 2sd1615a pw=1 ms 10 ms 200 ms dc 2sd1615
2sd1615, 2sd1615a 3 data sheet d10198ej4v0ds00 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 200 500 1000 gain bandwidth product vs. emitter current f t ?gain bandwidth product ?mh z i c ?collector current ?a v ec = 2.0 v 1 2 5 10 20 50 100 2 5 10 20 50 100 output capcitance vs. collector to base voltage c ob ?output capacitance ?pf v cb ?collector to base voltage ?v i e = 0 f = 1.0 mh z 0.01 0.02 0.05 0.1 0.2 0.5 1 i c ?collector current ?a 0.05 0.1 0.2 0.5 1 2 switching time vs. collector current t ?switching time ? s m v cc = 10 v i c = 10 . i bi = ?0 . i b2 v be(off) = ? to 3 v pw = 2 s duty cycle 2 % m . . t f t on t stg
2sd1615, 2sd1615a [memo] m8e 00. 4 the information in this document is current as of october, 2000. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).
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