2011. 1. 20 1/7 semiconductor technical data ku086n10p/f n-ch trench mos fet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h v dss = 100v, i d = 95a h drain-source on resistance : r ds(on) =8.6m ? (max.) @v gs = 10v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. g d s pin connection llll g llll g llll g llll g llll g llll g lllll g g llll g llll g llll g llll l g g l l l lyu l l llll g llll g llll g llll g lllll g llll g llll g llll g llll g llll g llll g llll g llll g llll g l l l characteristic symbol rating unit ku086n10p KU086N10F drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 95 50 a @t c =100 ? 60 32.5 pulsed (note1) i dp 400* single pulsed avalanche energy (note 2) e as 570 mj repetitive avalanche energy (note 1) e ar 7.1 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 167 50 w derate above 25 ? 1.33 0.4 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.75 2.5 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w ku086n10p KU086N10F
2011. 1. 20 2/7 ku086n10p/f revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 100 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.09 - v/ ? drain cut-off current i dss v ds =100v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =47.5a - 7.3 8.6 m ? dynamic total gate charge q g v ds =80v, i d =80a v gs =10v (note4,5) - 200 - nc gate-source charge q gs - 35 - gate-drain charge q gd - 60 - turn-on delay time t d(on) v dd =50v i d =80a r g =25 ? (note4,5) - 120 - ns turn-on rise time t r - 230 - turn-off delay time t d(off) - 520 - turn-off fall time t f - 200 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 8800 - pf output capacitance c oss - 630 - reverse transfer capacitance c rss - 340 - source-drain diode ratings continuous source current i s v gs 2011. 1. 20 3/7 ku086n10p/f revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -50 0.8 0.9 1.0 1.3 1.2 1.1 050 100 200 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) (m ? ) fig6. i s - v sd - reverse drain current i s (a) 3.0 1.5 1.0 0.5 0 2.5 2.0 -50 200 100 050 150 junction temperature tj ( ) c source - drain voltage v sd (v) v gs = 0v i ds = 5ma v gs =5v v gs =7v, 10v v gs =4.5v v gs =10v i d =47.5a 56 34 278 100 c 25 c v ds = 3v 10 3 10 2 10 2 10 -2 10 -1 10 0 10 1 10 1 10 0 10 3 10 2 10 1 10 0 0.0 0.4 0.6 0.8 0.2 1.0 1.2 1.4 10 3 10 2 10 1 10 0 v gs =7v, 10v v gs =4v v gs =3v v gs =2v v gs =0v fig5. i s - v sd - ? 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 2.0 reverse drain current i s (a) source - drain voltage v sd (v) 100 c 25 c 10 3 10 2 10 1 10 0
2011. 1. 20 4/7 ku086n10p/f revision no : 0 drain current i d (a) junction temperature t j ( ) drain - source voltage v ds (v) 0 100 80 60 40 20 120 75 25 125 150 175 100 200 50 0 fig8. i d - t j fig11. safe operation area drain current i d (a) 10 3 10 2 10 2 10 0 10 0 10 1 10 1 (ku086n10p) (KU086N10F) 10 -1 10 -1 t c = 25 single nonrepetitive pulse c drain current i d (a) fig7. r ds(on) - i d on - resistance r ds(on) (m ? ) 20 5 0 15 10 0100 50 125 150 175 25 75 v gs =5v v gs =10v v gs =4.5v ku086n10p KU086N10F gate - charge q g (nc) 0 12 10 6 2 4 8 120 150 200 80 240 40 0 fig10. q g - v gs gate - source voltage v gs (v) fig 9. c - v ds drain - source voltage v ds (v) 010203040 c rss c oss c iss frequency=1mhz, v gs =0v v ds =80v capacitance (pf) 10 5 10 4 10 3 10 2 dc 10ms 1ms 10us 100us operation in this area is limited by r ds(on) drain current i d (a) drain - source voltage v ds (v) fig12. safe operation area 10 3 10 2 10 2 10 0 10 0 10 1 10 1 10 -1 10 -1 t c = 25 single nonrepetitive pulse c dc 10ms 1ms 10us 100us operation in this area is limited by r ds(on)
2011. 1. 20 5/7 ku086n10p/f revision no : 0 time (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 0.02 0.2 0.01 fig13. transient thermal response curve transient thermal resistance - duty factor, d= t 1 /t 2 t 1 t 2 p dm duty=0.5 s ingle pulse 0.05 0.1 (ku086n10p) time (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 10 1 fig14. transient thermal response curve transient thermal resistance singl e pulse 0 .1 (KU086N10F) - duty factor, d= t 1 /t 2 t 1 t 2 p dm d uty=0. 5 0.2 0. 05 0. 02 0.01
2011. 1. 20 6/7 ku086n10p/f revision no : 0 fig15. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig17. resistive load switching fig16. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% v dss 0.8 z 0.8 v dss 0.5 v dss
2011. 1. 20 7/7 ku086n10p/f revision no : 0 fig18. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
|
