pre-irradiation radiation hardened power mosfet thru-hole (mo-036ab) 3/8/00 www.irf.com 1 product summary part number radiation level r ds(on) i d IRHG7110 100k rads (si) 0.6 w 1.0a irhg3110 300k rads (si) 0.6 w 1.0a irhg4110 600k rads (si) 0.6 w 1.0a irhg8110 1000k rads (si) 0.6 w 1.0a features: n single event effect (see) hardened n low r ds(on) n low total gate charge n proton tolerant n simple drive requirements n ease of paralleling n hermetically sealed n ceramic package n light weight for footnotes refer to the last page mo-036ab IRHG7110 100v, 4n-channel rad-hard ? hexfet ? mosfet technology international rectifiers rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applica- tions. these devices have been characterized for both total dose and single event effects (see). the combina- tion of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc con- verters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and tempera- ture stability of electrical parameters. pd - 90670 absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 1.0 i d @ v gs = 12v, t c = 100c continuous drain current 0.6 i dm pulsed drain current 4.0 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.011 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 56 mj i ar avalanche current 1.0 a e ar repetitive avalanche energy 0.14 mj dv/dt peak diode recovery dv/dt 2.4 a v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63in./1.6mm from case for 10s) weight 1.3 (typical) g o c a
IRHG7110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 1.0 i sm pulse source current (body diode) 4.0 v sd diode forward voltage 1.5 v t j = 25c, i s = 1.0a, v gs = 0v ? t rr reverse recovery time 110 ns t j = 25c, i f = 1.0a, di/dt 3 100a/ m s q rr reverse recovery charge 390 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.125 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.7 v gs = 12v, i d = 1.0a resistance 0.6 v gs = 12v, i d = 0.6a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 0.7 s ( )v ds > 15v, i ds = 0.6a ? i dss zero gate voltage drain current 25 v ds = 80v, v gs = 0v 250 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 16 v gs =12v, i d = 1.0a, q gs gate-to-source charge 3.0 nc v ds = 50v q gd gate-to-drain (miller) charge 4.0 t d (on) turn-on delay time 12 v dd = 50v, i d = 1.0a, t r rise time 16 r g = 24 w t d (off) turn-off delay time 65 t f fall time 45 l s + l d total inductance 10 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 300 v gs = 0v, v ds = 25v c oss output capacitance 100 pf f = 1.0mhz c rss reverse transfer capacitance 16 na w ? nh ns m a w thermal resistance parameter min typ max units test conditions r thjc junction-to-case 17 r thja junction-to-ambient 90 typical socket mount c/w
www.irf.com 3 pre-irradiation IRHG7110 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k to 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? 0.56 0.66 w v gs = 12v, i d = 0.6a on-state resistance (to-39) r ds(on) static drain-to-source ? 0.60 0.70 w v gs = 12v, i d = 0.6a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. part number IRHG7110 2. part number irhg3110, irhg4110, irhg8110 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.5 1.5 v v gs = 0v, i s =1.0a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28.0 285 43.0 100 100 100 80 60 br 36.8 305 39.0 100 90 70 50 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br radiation characteristics
IRHG7110 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5 7 9 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 1.0a
www.irf.com 5 pre-irradiation IRHG7110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 100 200 300 400 500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.0a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 0.1 1 10 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRHG7110 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHG7110 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v . 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.45a 0.63a 1.0a
IRHG7110 pre-irradiation 8 www.irf.com ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 112mh, peak i l = 1.0a, v gs = 12v a i sd 1.0a, di/dt 187a/ m s, v dd 100v, t j 150c case outline and dimensions mo-036ab footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional center: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 3/00
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