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? freescale semiconductor, inc., 2006?2010. all rights reserved. freescale semiconductor data sheet: advance information this document contains information on a new product. specificatio ns and information herein are su bject to change without notice . document number: MBC13917 rev. 1.0, 12/2010 MBC13917 package information plastic package: mlpd-6 1.5 mm x 2.0 mm case: 2129-01 ordering information device device marking or operating temperature range package MBC13917ep 917 mlpd-6 1 introduction the MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced rf bicmos process using the sige:c m odule. this is the leadless package version of the mbc13916 device. the MBC13917 is designed for a wide range of general purpose rf applications and has excellent high frequency gain and noise figure. on-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility. 1.1 features the MBC13917 has the following features: ? usable frequency range = 100 mhz to 2500 mhz ? 27 db typical gain at 434 mhz, vcc = 2.7v ?nf min (device level) = 0.95 db @ 434 mhz ?nf min (device level) = 0.95 db @ 900 mhz ? 6.5 dbm typical output po wer at -10 dbm pin at 900 mhz, vcc = 2.7v MBC13917 general purpose sige:c rf cascode low noise amplifier contents 1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2 electrical characteristics . . . . . . . . . . . . . . . . . .3 3 scattering and noise parameters . . . . . . . . . . . .6 4 application circuits . . . . . . . . . . . . . . . . . . . . . .24 5 printed circuit board and bill of materials . . .33 6 packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 7 product documentation . . . . . . . . . . . . . . . . . . .38 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .38
introduction MBC13917 advance information, rev. 1.0 2 freescale semiconductor ? 46 db typical reverse isolation (dev ice level) at 434 mhz, vcc = 2.7v ? 4.7 ma typical bias current at vcc = 2.7v ? 2.7v to 3.3v supply ? industry standard mlpd-6 leadless package ? available only in tape and reel packaging 1.2 applications ideal for use in any rf product that operates be tween 100 mhz and 2.5 ghz, and may be applied in: ? buffer amplifiers ? mixers ? if amplifiers ? voltage controlled oscillators (vcos) ? low power amplifiers ? gain block in rf end products ? smart metering ? industrial?scientific and medical (ism) ? consumer?wlan, 802.11 b/g ? auto?tpms, rke, gps, active antennas, wireless security figure 1 shows a simplified block diagram of the mb c13917 with the pinouts and location of the pin 1 designator on the package. figure 1. functional block diagram rf out gnd b rf in gnd a nc nc 1 4 6 5 2 3
electrical characteristics MBC13917 advance information, rev. 1.0 freescale semiconductor 3 2 electrical characteristics table 1 lists the recommended operating conditions of the MBC13917 device. table 2 . lists the maximum ratings for the device. table 3 lists electrical characteri stics associated with noise pe rformance measured in a 50 system. additional noise parameters are listed in table 9 . table 1. recommended operating conditions characteristic symbol min typ max unit rf frequency f rf 100 ? 2500 mhz supply voltage v cc 2.1 2.7 3.3 vdc table 2. maximum ratings (t a = 25 c, unless otherwise noted) rating symbol value unit supply voltage v cc 3.5 vdc rf input power p rf 10 dbm power dissipation p dis 100 mw supply current i cc 20 ma thermal resistance, junction to case r jc 400 c/w storage temperature range t stg -65 to 150 c operating ambient temperature range t a -40 to 85 c operating case temperature t c -40 to 100 c note: maximum ratings and esd 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the recommended operating conditions and electrical characteristics tables. 2. esd (electrostatic discharge) immu nity meets human body model (hbm) 550 v and mach ine model (mm) 50 v. additional esd data is available upon request. table 3. device level characteristics (vcc = 2.7v, t a = 25 c, measured in s-parameter test fixture, unless otherwise noted) characteristic symbol min typ max unit insertion gain |s21| see note below db f= 350 mhz 21.7 23.7 ? f= 430 mhz 21.4 23.4 ? f= 900 mhz 18.7 20.7 ? f= 1900 mhz 12.6 14.6 ?
electrical characteristics MBC13917 advance information, rev. 1.0 4 freescale semiconductor table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application frequencies. further details on the application circuits are shown in section 4, ?applic ation circuits ? and details on the boards are shown in section 5, ?printed circuit board and bill of materials .? maximum stable gain and maximum available gain (note1) msg, mag db f= 350 mhz 34 36.4 ? f= 430 mhz 33.2 35.6 ? f= 900 mhz 26.5 28.9 ? f= 1900 mhz 15 17.6 ? minimum noise figure nf min db f= 350 mhz ? 1.0 1.35 f= 430 mhz ? 0.95 1.30 f= 900 mhz ? 0.95 1.30 f= 1900 mhz ? 1.5 1.85 output third order intercept oip3 dbm f= 350 mhz 7.7 9.7 ? f= 430 mhz 8.3 10.3 ? f= 900 mhz 11.3 13.3 ? f= 1900 mhz 11.6 13.6 ? reverse isolation s12 db f= 350 mhz -49 -53 ? f= 430 mhz -48 -52 ? f= 900 mhz -42 -46 ? f= 1900 mhz -40 -44 ? note: maximum available gain and maximum stable gain are defined by the k factor as follows: if k>1, mag=|s21/s12(k sqrt(k2-1)| if k<1, msg=|s21/s12| table 4. electrical characteristics measured in frequency-specific tuned circuits (vcc = 2.7v, t a = 25c unless otherwise noted) characteristic symbol min typ max unit 350 mhz (see figure 16 ) supply current icc ? 4.7 5.6 ma rf gain g 26.6 27.7 ? db table 3. device level characteristics (continued) (vcc = 2.7v, t a = 25 c, measured in s-parameter test fixture, unless otherwise noted) characteristic symbol min typ max unit
electrical characteristics MBC13917 advance information, rev. 1.0 freescale semiconductor 5 noise figure nf ? 2.1 2.5 db output 3rd order intercept point oip3 8.0 9.5 ? dbm power output at 1 db gain compression p1 dboutput -1 1 ? dbm input return loss s11 ? -8 -7 db small signal gain s21 26 27 ? db reverse isolation s12 ? -47 -46 db output return loss s22 ? -9 -7.5 db 370 mhz (see figure 16 ) supply current icc ? 4.7 5.6 ma rf gain g 27.5 28.6 ? db noise figure nf ? 2.2 2.6 db output 3rd order intercept point oip3 9.2 10.7 ? dbm power output at 1 db gain compression p1 dboutput 0.7 2.2 ? dbm input return loss s11 ? -12 -10 db small signal gain s21 27 28.5 ? db reverse isolation s12 ? -47 -46 db output return loss s22 ? -12 -10 db 434 mhz (see figure 17 ) supply current icc ? 4.7 5.6 ma rf gain g 26 27 ? db noise figure nf ? 2.3 2.65 db output 3rd order intercept point oip3 9.5 10.9 ? dbm power output at 1 db gain compression p1 dboutput 12.2?dbm input return loss s11 ? -15 -10 db small signal gain s21 26 27 ? db reverse isolation s12 ? -46 -45 db output return loss s22 ? -19 -16 db 900 mhz (see figure 18 ) supply current icc ? 4.7 5.6 ma rf gain g 22.5 24 ? db noise figure nf ? 1.19 1.5 db table 4. electrical characteristics measured in frequency-specific tuned circuits (continued) (vcc = 2.7v, t a = 25c unless otherwise noted) characteristic symbol min typ max unit
scattering and noise parameters MBC13917 advance information, rev. 1.0 6 freescale semiconductor 3 scattering and noise parameters table 5 through table 8 lists the s parameters for the packaged part in a 50 system at four supply voltage levels. output 3rd order intercept point oip3 11 12.4 ? dbm power output at 1 db gain compression p1 dboutput 23.5?dbm input return loss s11 ? -10 -9 db small signal gain s21 23 24 ? db reverse isolation s12 ? -40 -39 db output return loss s22 ? -23 -16 db 1900 mhz (see figure 19 ) supply current icc ? 4.7 5.6 ma rf gain g 13.5 14.9 ? db noise figure nf ? 1.8 2.15 db output 3rd order intercept point oip3 7 8.5 ? dbm power output at 1 db gain compression p1 dboutput -2.5 -1.1 ? dbm input return loss s11 ? -13 -10 db small signal gain s21 13.8 14.8 ? db reverse isolation s12 ? -42.5 -41.5 db output return loss s22 ? -11.8 -10 db table 5. scattering parameters (vcc = 2.7v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 100 0.864 -8.1 12.178 169.9 0.001 24.4 0.953 -1.1 150 0.859 -12.4 12.428 165.1 0.001 36.2 0.952 -1.5 200 0.843 -16.2 12.112 160.5 0.001 39.4 0.951 -2.2 250 0.831 -20.6 12.128 156.1 0.002 52.1 0.952 -2.8 300 0.812 -24.5 11.95 151.8 0.002 52.6 0.951 -3.3 350 0.794 -28.3 11.741 147.9 0.002 59.2 0.95 -4 400 0.775 -32.1 11.556 143.8 0.002 64.2 0.947 -4.6 450 0.754 -35.7 11.353 140 0.003 66 0.947 -5.4 table 4. electrical characteristics measured in frequency-specific tuned circuits (continued) (vcc = 2.7v, t a = 25c unless otherwise noted) characteristic symbol min typ max unit
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 7 500 0.709 -39.5 10.954 135.2 0.003 65.2 0.951 -4.7 550 0.694 -42.9 10.587 131.5 0.003 64.8 0.944 -5.5 600 0.671 -46.2 10.212 128 0.003 65.5 0.941 -6.2 650 0.647 -49.5 10.029 124.5 0.004 64.4 0.937 -7.1 700 0.622 -53.1 9.866 121.3 0.004 63.2 0.934 -7.8 750 0.595 -56.1 9.671 117.7 0.004 63.5 0.927 -8.7 800 0.573 -59.2 9.299 114.5 0.004 61 0.918 -9.6 850 0.554 -62.5 9.077 111.4 0.005 61.1 0.911 -10.6 900 0.528 -65.1 8.803 108.4 0.005 57.4 0.907 -11.4 950 0.51 -68 8.535 105.5 0.005 55.2 0.897 -12.2 1000 0.488 -70.6 8.247 102.4 0.005 52.2 0.888 -13.3 1050 0.471 -73.2 7.994 99.7 0.005 50.4 0.881 -14.5 1100 0.453 -75.4 7.698 97 0.005 47 0.871 -15.7 1150 0.436 -77.9 7.443 94.5 0.006 44.3 0.861 -16.8 1200 0.422 -80.4 7.223 91.6 0.005 40.7 0.85 -17.9 1250 0.408 -82.6 6.974 89.1 0.006 36 0.838 -18.9 1300 0.393 -84.6 6.764 86.7 0.005 31.1 0.827 -20.4 1350 0.378 -86.8 6.552 84.1 0.005 27.8 0.815 -21.8 1400 0.367 -88.7 6.29 81.8 0.005 22 0.803 -23 1450 0.355 -90.1 6.094 79.7 0.005 19.9 0.793 -24.3 1500 0.35 -91.9 5.921 77.2 0.005 14.3 0.78 -25.9 1550 0.346 -93.3 5.725 75.7 0.005 10.4 0.769 -27.4 1600 0.342 -95.7 5.513 72.8 0.005 4.5 0.755 -29 1650 0.335 -97.1 5.327 70.7 0.005 -4.6 0.742 -30.5 1700 0.335 -98.9 5.136 68.4 0.005 -9.6 0.73 -32.1 1750 0.326 -100.6 4.957 66.4 0.005 -18.9 0.717 -33.8 1800 0.321 -102.2 4.776 64.2 0.005 -23.7 0.704 -35.6 1850 0.314 -103.6 4.585 62.2 0.005 -24.4 0.689 -37.4 1900 0.312 -103.4 4.432 60.5 0.006 -35.8 0.675 -39.1 1950 0.315 -104.3 4.28 58.5 0.006 -45.6 0.663 -40.7 2000 0.316 -105.1 4.142 56.5 0.007 -54.2 0.651 -42.6 table 5. scattering parameters (continued) (vcc = 2.7v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 8 freescale semiconductor 2050 0.317 -106 3.994 54.7 0.007 -60.3 0.64 -44.5 2100 0.319 -106.7 3.838 52.8 0.008 -64.9 0.627 -46.3 2150 0.318 -107.2 3.719 50.9 0.008 -70.7 0.616 -48.3 2200 0.321 -107.8 3.568 49.4 0.009 -74.6 0.605 -50.1 2250 0.326 -108.1 3.445 47.3 0.01 -79.8 0.594 -51.9 2300 0.328 -108.2 3.339 45.6 0.011 -85.1 0.584 -53.8 2350 0.333 -108.8 3.185 44.4 0.012 -88 0.577 -55.5 2400 0.339 -109.5 3.067 42.2 0.013 -91.2 0.566 -57.4 2450 0.34 -109.7 2.959 40.7 0.014 -94.1 0.56 -59 2500 0.342 -109.8 2.837 39.3 0.017 -97.7 0.552 -60.7 2550 0.346 -109.1 2.736 38 0.019 -106.2 0.55 -62.6 2600 0.355 -108.9 2.645 36.4 0.018 -112 0.543 -64.8 table 6. scattering parameters (vcc = 3v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 100 0.852 -8.1 13.693 169.6 0.001 16.9 0.952 -1.1 150 0.846 -12.3 13.955 164.7 0.001 32.4 0.951 -1.5 200 0.829 -16.1 13.599 160 0.001 43.8 0.95 -2.1 250 0.814 -20.5 13.595 155.5 0.001 51.5 0.951 -2.7 300 0.794 -24.3 13.377 151.3 0.002 57 0.95 -3.2 350 0.774 -28.1 13.128 147.3 0.002 56.4 0.949 -3.8 400 0.753 -31.8 12.903 143.1 0.002 62.7 0.947 -4.5 450 0.731 -35.3 12.649 139.3 0.002 65.9 0.947 -5.3 500 0.685 -38.9 12.176 134.6 0.003 64.3 0.951 -4.6 550 0.669 -42.2 11.763 130.9 0.003 64.2 0.945 -5.4 600 0.644 -45.3 11.34 127.4 0.003 64.6 0.942 -6.1 650 0.619 -48.5 11.117 123.9 0.003 65.3 0.938 -6.9 700 0.592 -51.8 10.898 120.7 0.004 61.4 0.935 -7.6 table 5. scattering parameters (continued) (vcc = 2.7v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 9 750 0.563 -54.5 10.651 117.2 0.004 62.4 0.928 -8.5 800 0.54 -57.4 10.237 114 0.004 60.2 0.919 -9.3 850 0.521 -60.6 9.973 111 0.004 56.5 0.913 -10.4 900 0.494 -62.8 9.657 108 0.005 55.9 0.909 -11.2 950 0.476 -65.4 9.348 105.2 0.005 52.9 0.899 -12 1000 0.454 -67.8 9.03 102.2 0.005 50.8 0.891 -13 1050 0.435 -70.2 8.743 99.6 0.005 46.9 0.883 -14.2 1100 0.418 -72.1 8.414 96.9 0.005 43.5 0.872 -15.4 1150 0.4 -74.3 8.126 94.5 0.005 41.2 0.863 -16.5 1200 0.386 -76.5 7.881 91.7 0.005 35.6 0.853 -17.6 1250 0.372 -78.5 7.606 89.3 0.005 32.7 0.842 -18.6 1300 0.356 -80.2 7.367 86.9 0.005 26 0.83 -20.1 1350 0.341 -82.1 7.13 84.5 0.005 22.9 0.817 -21.4 1400 0.33 -83.8 6.846 82.2 0.005 18.3 0.807 -22.6 1450 0.319 -85 6.631 80.3 0.004 11.5 0.797 -23.9 1500 0.314 -86.6 6.435 77.8 0.004 5.9 0.784 -25.4 1550 0.311 -87.8 6.223 76.3 0.004 2.3 0.773 -27 1600 0.305 -90.1 5.995 73.6 0.004 -6.7 0.759 -28.5 1650 0.299 -91.2 5.793 71.6 0.004 -15.4 0.747 -30 1700 0.299 -93 5.587 69.4 0.005 -19.4 0.734 -31.6 1750 0.289 -94.6 5.395 67.4 0.005 -29.9 0.722 -33.3 1800 0.285 -96.1 5.198 65.2 0.005 -36.4 0.709 -35.2 1850 0.278 -97.4 4.992 63.3 0.005 -36.9 0.695 -36.9 1900 0.276 -97.1 4.823 61.7 0.006 -46.2 0.681 -38.5 1950 0.28 -97.9 4.658 59.8 0.006 -55.1 0.668 -40.2 2000 0.281 -98.6 4.507 57.9 0.007 -62.2 0.657 -42.1 2050 0.282 -99.5 4.349 56.1 0.008 -68.8 0.646 -43.9 2100 0.285 -100.2 4.181 54.3 0.008 -74.9 0.634 -45.7 2150 0.284 -100.7 4.049 52.4 0.009 -76.8 0.621 -47.6 2200 0.287 -101.2 3.889 50.9 0.01 -81.2 0.611 -49.5 2250 0.292 -101.6 3.754 49 0.011 -84.5 0.601 -51.3 table 6. scattering parameters (continued) (vcc = 3v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 10 freescale semiconductor 2300 0.296 -101.5 3.637 47.3 0.012 -89.2 0.591 -53.1 2350 0.3 -102.3 3.476 46.1 0.013 -92.3 0.583 -54.8 2400 0.307 -103 3.346 44 0.014 -95.2 0.573 -56.7 2450 0.308 -103.1 3.229 42.6 0.015 -97.3 0.566 -58.3 2500 0.31 -103.3 3.097 41.2 0.017 -100.5 0.558 -60 2550 0.316 -102.6 2.989 40 0.019 -108.9 0.557 -61.8 2600 0.326 -102.5 2.89 38.4 0.019 -114.4 0.549 -64.1 table 7. scattering parameters (vcc = 3.3v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 100 0.84 -8.1 15.185 169.4 0.001 13.7 0.949 -1.1 150 0.832 -12.4 15.453 164.4 0.001 28.4 0.949 -1.4 200 0.814 -16.1 15.06 159.6 0.001 45.2 0.949 -2.1 250 0.798 -20.4 15.023 154.9 0.001 47.4 0.95 -2.6 300 0.776 -24.2 14.754 150.6 0.002 50.6 0.948 -3.1 350 0.755 -27.9 14.456 146.6 0.002 58.2 0.948 -3.8 400 0.732 -31.6 14.192 142.4 0.002 62.9 0.947 -4.4 450 0.708 -34.9 13.882 138.5 0.002 64.5 0.946 -5.2 500 0.662 -38.3 13.323 133.7 0.002 62.7 0.95 -4.4 550 0.645 -41.4 12.86 130.1 0.003 61.7 0.944 -5.3 600 0.619 -44.4 12.397 126.7 0.003 63.6 0.942 -5.9 650 0.591 -47.4 12.121 123.2 0.003 62.7 0.939 -6.8 700 0.564 -50.4 11.841 119.9 0.003 60.6 0.934 -7.4 750 0.535 -52.9 11.538 116.5 0.003 60.5 0.927 -8.3 800 0.511 -55.5 11.087 113.4 0.004 58.6 0.92 -9.1 850 0.491 -58.4 10.779 110.4 0.004 58.2 0.914 -10.1 900 0.465 -60.4 10.413 107.5 0.004 54.4 0.909 -10.9 950 0.446 -62.7 10.066 104.7 0.004 53 0.898 -11.8 table 6. scattering parameters (continued) (vcc = 3v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 11 1000 0.423 -64.8 9.716 101.9 0.004 48.9 0.891 -12.8 1050 0.405 -66.8 9.403 99.3 0.004 46.2 0.884 -13.9 1100 0.387 -68.5 9.042 96.7 0.005 41.3 0.873 -15.1 1150 0.37 -70.3 8.72 94.4 0.004 38.1 0.863 -16.2 1200 0.355 -72.3 8.454 91.7 0.004 33.6 0.854 -17.2 1250 0.341 -73.9 8.155 89.4 0.004 28.5 0.844 -18.2 1300 0.326 -75.3 7.89 87.1 0.004 22.8 0.831 -19.7 1350 0.311 -76.9 7.627 84.7 0.004 19 0.819 -21.1 1400 0.3 -78.3 7.325 82.6 0.004 10.8 0.809 -22.3 1450 0.29 -79.2 7.093 80.7 0.004 5.1 0.8 -23.5 1500 0.285 -80.6 6.881 78.2 0.004 0.1 0.786 -25 1550 0.282 -81.7 6.653 76.8 0.004 -5 0.775 -26.5 1600 0.276 -83.9 6.411 74.2 0.004 -14.1 0.763 -28.1 1650 0.27 -84.8 6.198 72.3 0.004 -23.3 0.751 -29.5 1700 0.27 -86.5 5.978 70.1 0.004 -28.6 0.738 -31.1 1750 0.26 -87.8 5.771 68.2 0.004 -38 0.725 -32.8 1800 0.256 -89.2 5.563 66.1 0.005 -44.4 0.713 -34.7 1850 0.25 -90.5 5.346 64.2 0.005 -46 0.7 -36.4 1900 0.248 -90 5.163 62.6 0.006 -53.4 0.685 -37.9 1950 0.252 -90.9 4.987 60.8 0.007 -62.1 0.672 -39.6 2000 0.253 -91.6 4.824 59 0.007 -69.9 0.661 -41.5 2050 0.255 -92.5 4.658 57.3 0.008 -73.5 0.651 -43.3 2100 0.258 -93.2 4.481 55.5 0.009 -79 0.639 -45 2150 0.258 -93.6 4.336 53.7 0.009 -82.5 0.625 -47 2200 0.261 -94.1 4.169 52.2 0.01 -85.3 0.616 -48.9 2250 0.267 -94.5 4.023 50.4 0.011 -88.8 0.607 -50.6 2300 0.271 -94.5 3.898 48.7 0.012 -92.8 0.596 -52.3 2350 0.275 -95.3 3.73 47.5 0.013 -96.3 0.587 -54.1 2400 0.281 -96.2 3.591 45.6 0.014 -97.7 0.577 -56 2450 0.284 -96.4 3.466 44.2 0.016 -100.2 0.572 -57.6 2500 0.287 -96.6 3.326 42.8 0.018 -102.3 0.564 -59.2 table 7. scattering parameters (continued) (vcc = 3.3v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 12 freescale semiconductor 2550 0.293 -95.9 3.21 41.6 0.02 -110 0.562 -61 2600 0.304 -96 3.105 40.1 0.02 -114.4 0.554 -63.4 table 8. scattering parameters (vcc = 3.5v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang 100 0.84 -8.1 15.185 169.4 0.001 13.7 0.949 -1.1 150 0.832 -12.4 15.453 164.4 0.001 28.4 0.949 -1.4 200 0.814 -16.1 15.06 159.6 0.001 45.2 0.949 -2.1 250 0.798 -20.4 15.023 154.9 0.001 47.4 0.95 -2.6 300 0.776 -24.2 14.754 150.6 0.002 50.6 0.948 -3.1 350 0.755 -27.9 14.456 146.6 0.002 58.2 0.948 -3.8 400 0.732 -31.6 14.192 142.4 0.002 62.9 0.947 -4.4 450 0.708 -34.9 13.882 138.5 0.002 64.5 0.946 -5.2 500 0.662 -38.3 13.323 133.7 0.002 62.7 0.95 -4.4 550 0.645 -41.4 12.86 130.1 0.003 61.7 0.944 -5.3 600 0.619 -44.4 12.397 126.7 0.003 63.6 0.942 -5.9 650 0.591 -47.4 12.121 123.2 0.003 62.7 0.939 -6.8 700 0.564 -50.4 11.841 119.9 0.003 60.6 0.934 -7.4 750 0.535 -52.9 11.538 116.5 0.003 60.5 0.927 -8.3 800 0.511 -55.5 11.087 113.4 0.004 58.6 0.92 -9.1 850 0.491 -58.4 10.779 110.4 0.004 58.2 0.914 -10.1 900 0.465 -60.4 10.413 107.5 0.004 54.4 0.909 -10.9 950 0.446 -62.7 10.066 104.7 0.004 53 0.898 -11.8 1000 0.423 -64.8 9.716 101.9 0.004 48.9 0.891 -12.8 1050 0.405 -66.8 9.403 99.3 0.004 46.2 0.884 -13.9 1100 0.387 -68.5 9.042 96.7 0.005 41.3 0.873 -15.1 1150 0.37 -70.3 8.72 94.4 0.004 38.1 0.863 -16.2 1200 0.355 -72.3 8.454 91.7 0.004 33.6 0.854 -17.2 table 7. scattering parameters (continued) (vcc = 3.3v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 13 1250 0.341 -73.9 8.155 89.4 0.004 28.5 0.844 -18.2 1300 0.326 -75.3 7.89 87.1 0.004 22.8 0.831 -19.7 1350 0.311 -76.9 7.627 84.7 0.004 19 0.819 -21.1 1400 0.3 -78.3 7.325 82.6 0.004 10.8 0.809 -22.3 1450 0.29 -79.2 7.093 80.7 0.004 5.1 0.8 -23.5 1500 0.285 -80.6 6.881 78.2 0.004 0.1 0.786 -25 1550 0.282 -81.7 6.653 76.8 0.004 -5 0.775 -26.5 1600 0.276 -83.9 6.411 74.2 0.004 -14.1 0.763 -28.1 1650 0.27 -84.8 6.198 72.3 0.004 -23.3 0.751 -29.5 1700 0.27 -86.5 5.978 70.1 0.004 -28.6 0.738 -31.1 1750 0.26 -87.8 5.771 68.2 0.004 -38 0.725 -32.8 1800 0.256 -89.2 5.563 66.1 0.005 -44.4 0.713 -34.7 1850 0.25 -90.5 5.346 64.2 0.005 -46 0.7 -36.4 1900 0.248 -90 5.163 62.6 0.006 -53.4 0.685 -37.9 1950 0.252 -90.9 4.987 60.8 0.007 -62.1 0.672 -39.6 2000 0.253 -91.6 4.824 59 0.007 -69.9 0.661 -41.5 2050 0.255 -92.5 4.658 57.3 0.008 -73.5 0.651 -43.3 2100 0.258 -93.2 4.481 55.5 0.009 -79 0.639 -45 2150 0.258 -93.6 4.336 53.7 0.009 -82.5 0.625 -47 2200 0.261 -94.1 4.169 52.2 0.01 -85.3 0.616 -48.9 2250 0.267 -94.5 4.023 50.4 0.011 -88.8 0.607 -50.6 2300 0.271 -94.5 3.898 48.7 0.012 -92.8 0.596 -52.3 2350 0.275 -95.3 3.73 47.5 0.013 -96.3 0.587 -54.1 2400 0.281 -96.2 3.591 45.6 0.014 -97.7 0.577 -56 2450 0.284 -96.4 3.466 44.2 0.016 -100.2 0.572 -57.6 2500 0.287 -96.6 3.326 42.8 0.018 -102.3 0.564 -59.2 2550 0.293 -95.9 3.21 41.6 0.02 -110 0.562 -61 2600 0.304 -96 3.105 40.1 0.02 -114.4 0.554 -63.4 table 8. scattering parameters (continued) (vcc = 3.5v, 25 c, 50 system) f (mhz) s11 s21 s12 s22 mag ang mag ang mag ang mag ang
scattering and noise parameters MBC13917 advance information, rev. 1.0 14 freescale semiconductor table 9 lists the noise parameters for the packaged part as measured in a 50 system. table 9. noise parameters (50 system) freq fmin gamma opt rn ga mhz db mag angle db vcc = 2.7 v, icc = 4.7 ma, 25 c 100 1.14 0.154 63.1 0.17 34.78 300 1.01 0.153 50.4 0.16 33.08 500 0.93 0.152 46.2 0.15 31.16 700 0.91 0.151 49.1 0.14 29.05 900 0.95 0.151 57.3 0.13 26.83 1000 0.99 0.152 63 0.13 25.69 1200 1.09 0.156 76.5 0.13 23.38 1400 1.193 0.164 91.6 0.12 21.09 1600 1.28 0.178 106.6 0.12 18.87 1900 1.515 0.21 125.6 0.12 15.78 2000 1.61 0.225 130.3 0.12 14.84 2200 1.84 0.262 135.8 0.13 13.15 2400 2.12 0.308 135.1 0.14 11.74 vcc = 3.0 v, icc = 5.3 ma, 25 c 100 1.18 0.127 83 0.16 35.42 300 1.05 0.125 65.4 0.15 33.81 500 0.96 0.124 57.8 0.14 31.93 700 0.91 0.123 58.3 0.13 29.86 900 0.95 0.125 65.2 0.13 27.63 1000 0.98 0.127 70.4 0.12 26.48 1200 1.07 0.133 83.5 0.12 24.16 1400 1.153 0.143 98.4 0.12 21.83 1600 1.24 0.159 113.3 0.11 19.57 1900 1.455 0.194 132 0.11 16.44 2000 1.54 0.209 136.2 0.12 15.49 2200 1.76 0.246 140.6 0.12 13.79 2400 2.03 0.291 137.8 0.13 12.39 vcc = 3.3 v, icc = 6.1 ma, 25 c 100 1.20 0.122 -4.7 0.2 34.43
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 15 300 1.05 0.112 171.7 0.11 33.33 500 0.95 0.105 -57.8 0.14 31.86 700 0.90 0.102 33.5 0.14 30.07 900 0.93 0.104 92.1 0.11 28.06 1000 0.96 0.106 111 0.11 26.99 1200 1.04 0.114 132.6 0.1 24.76 1400 1.12 0.127 137.5 0.1 22.48 1600 1.20 0.146 132.5 0.1 20.22 1900 1.41 0.184 120.3 0.12 17.02 2000 1.49 0.2 118.3 0.13 16.04 2200 1.71 0.236 122.1 0.14 14.27 2400 1.97 0.279 141.9 0.12 12.81 vcc = 3.5 v, icc = 6.7 ma, 25 c 100 1.20 0.126 121 0.14 36.11 300 1.05 0.108 98.2 0.14 34.63 500 0.95 0.096 86.1 0.13 32.83 700 0.90 0.091 82.9 0.12 30.79 900 0.92 0.092 86.6 0.12 28.58 1000 0.95 0.095 90.4 0.11 27.43 1200 1.02 0.104 101 0.11 25.09 1400 1.10 0.12 113.7 0.11 22.73 1600 1.18 0.141 126.7 0.11 20.44 1900 1.38 0.181 142.4 0.1 17.26 2000 1.47 0.198 145.7 0.11 16.3 2200 1.68 0.233 148 0.11 14.59 2400 1.94 0.274 142.9 0.12 13.21 table 9. noise parameters (continued) (50 system) freq fmin gamma opt rn ga mhz db mag angle db
scattering and noise parameters MBC13917 advance information, rev. 1.0 16 freescale semiconductor figure 2 through figure 5 are the constant noise figure and gain circles with input and output stability regions shown on smith charts. gamma opt, noise resist ance and stability at the frequency are shown for two values of the external bias resistor at 350 mhz, 450 mhz, 900 mhz, and 1900 mhz. figure 2. constant noise figure and gain circles: 350 mhz
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 17 figure 3. constant noise figure and gain circles: 450 mhz figure 4. constant noise figure and gain circles: 900 mhz
scattering and noise parameters MBC13917 advance information, rev. 1.0 18 freescale semiconductor figure 5. constant noise figure and gain circles: 1900 mhz figure 6 shows minimum noise figure and associated gain ve rsus frequency for the packaged device in a 50 system at four bias levels. figure 6. minimum noise figure and asso ciated gain vs. frequency at 25c 5 10 15 20 25 30 35 40 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 0.2 0.6 1 1.4 1.8 2.2 2.6 frequency ? (ghz) nfmin ? (db) ? 2.7v nfmin ? (db) ? 3v nfmin ? (db) ? 3.3v nfmin ? (db) ? 3.5v associated ? gain ? (db) ? 2.7v associated ? gain ? (db) ? 3v associated ? gain ? (db) ? 3.3v associated ? gain ? (db) ? 3.5v nfmin (db) associated gain (db)
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 19 figure 7 shows minimum noise figure versus frequency over temperature for the packaged device in a 50 system. figure 7. minimum noise figure vs. frequency and temperature figure 8 shows maximum stable and availa ble gain and forward insertion gain for the packaged device in a 50 system over frequency. figure 8. maximum stable gain/maximum available gain and forward insertion gain vs. frequency at 25 c 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 0.2 0.6 1 1.4 1.8 2.2 2.6 frequency ? (ghz) nfmin ? 25c nfmin ?\ 40c nfmin ? 85c nfmin (db) 5 10 15 20 25 30 35 40 0.1 0.6 1.1 1.6 2.1 2.6 frequency ? (ghz) msg/mag ? (db) |s21|^2 ? (db) |s21 2 | msg/mag msg, mag, |s212|(db)
scattering and noise parameters MBC13917 advance information, rev. 1.0 20 freescale semiconductor figure 9 shows power out versus power in the 350 mhz application circuit at four bias levels. figure 9. output power vs. input power for 350 mhz at 25c figure 10 shows power out versus power in the 900 mhz application circuit at four bias levels. figure 10. output power vs. input power for 900 mhz at 25c \ 4 \ 2 0 2 4 6 8 10 \ 30 \ 25 \ 20 \ 15 \ 10 \ 50 pin ? (dbm) pout ? 2.7v pout ? 3.0v pout ? 3.3v pout ? 3.5v pout (dbm) \ 6 \ 4 \ 2 0 2 4 6 8 10 \ 30 \ 25 \ 20 \ 15 \ 10 \ 50 pin ? (dbm) pout ? 2.7v pout ? 3.0v pout ? 3.3v pout ? 3.5v pout (dbm)
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 21 figure 11 shows power out versus power in the 1900 mhz application circuit at four bias levels. figure 11. output power vs. input power for 1900 mhz at 25c figure 12 shows supply current versus power in and bias in the 350 mhz application circuit at four bias levels. figure 12. supply current vs. input power for 350 mhz at 25c \ 15 \ 10 \ 5 0 5 10 15 \ 30 \ 25 \ 20 \ 15 \ 10 \ 50 pin ? (dbm) pout ? 2.7v pout ? 3.0v pout ? 3.3v pout ? 3.5v pout (dbm) 4 5 6 7 8 9 10 11 12 \ 30 \ 25 \ 20 \ 15 \ 10 \ 50 pin ? (dbm) icc ? 2.7v icc ? 3.0v icc ? 3.3v icc ? 3.5v icc (ma)
scattering and noise parameters MBC13917 advance information, rev. 1.0 22 freescale semiconductor figure 13 shows supply current versus power in and bias in the 900 mhz application circuit at four bias levels. figure 13. supply current vs. input power for 900 mhz at 25c figure 14 shows supply current versus powe r in and bias in the 1900 mhz appl ication circuit at four bias levels. figure 14. supply current vs. input power for 1900 mhz at 25c 4 5 6 7 8 9 10 11 12 \ 30 \ 25 \ 20 \ 15 \ 10 \ 50 pin ? (dbm) icc ? 2.7v icc ? 3.0v icc ? 3.3v icc ? 3.5v icc (ma) 4 5 6 7 8 9 10 11 12 13 14 \ 30 \ 25 \ 20 \ 15 \ 10 \ 50 pin ? (dbm) icc ? 2.7v icc ? 3.0v icc ? 3.3v icc ? 3.5v icc (ma)
scattering and noise parameters MBC13917 advance information, rev. 1.0 freescale semiconductor 23 figure 15 shows maximum unilateral gain versus frequency at four bias levels. figure 15. maximum unilateral gain vs. frequency and bias at 25c 5 10 15 20 25 30 35 40 45 0.1 0.6 1.1 1.6 2.1 2.6 frequency ? (ghz) gumax ? 2.7v gumax ? 3.0v gumax ? 3.3v gumax ? 3.5v maximum unilateral gain (db)
application circuits MBC13917 advance information, rev. 1.0 24 freescale semiconductor 4 application circuits the MBC13917 lna is designed for applications in the 100 mhz to 2.5 ghz range. in the application examples included in this section, a balance is made betw een competing rf perfo rmance characteristics of icc, nf, gain ip3, and return losses to demonstrate overall performance. conj ugate matching is not used for the input or output. instead, matching that achieves a tradeoff in rf performance qualities is shown. for a particular application or specification require ment, the matching can be changed to achieve enhanced performance of one parameter (generally at the expense of ot her parameters). application information for 350 mhz, 434 mhz, 900 mhz and 1900 mhz circuits is provided. ? section 3, ?scattering and noise parameters ? provides smith charts with gain and noise circles for each application frequency. ? section 5, ?printed circuit board and bill of materials ? provides the evaluation board layout and bill of material for the circuits. 4.1 350 mhz?370 mhz applications this application circuit was designed to provide nf = 2.1 db, s21 gain > 27 db for 350 mhz. return losses and gain are similar for 350 mhz?370 mhz. ? component c4 has the greatest impact on return losses, nf, and gain, by moving the input and output on the smith chart. ? component l1 can be lowered to improve nf, by trading off s11 return loss. ? gain, oip3 and p1dboutput can be increased, by decreasing the resistor value at the output (without impacting nf or return losses). this application is intended for a range of d esigns, including tetra land mobile and base station transceivers. typical performance that can be e xpected from this circuit at 2.7v is listed in table 10 . figure 16 is the 350 mhz?370 mhz application schema tic with package pinouts and the circuit component topology. figure 16. 350 mhz?370 mhz application schematic rf out l1 39 nh c1 47 pf l2 47 nh c2 100 pf nc vcc rf in . gnd 1 4 6 5 2 3 nc c3 .1uf gnd c4 2.4 pf c5 3 pf r1 24 ohm
application circuits MBC13917 advance information, rev. 1.0 freescale semiconductor 25 table 10 provides the electrical characteristics for the 350 mhz?370 mhz application. table 10. typical 350?370 mhz evaluation board performance characteristic symbol min typ max unit 350 mhz ( figure 16 ) vcc 2.7v t a = 25 c supply current i cc ?4.75.6ma rf gain g 26.6 27.7 ? db noise figure nf ? 2.1 2.5 db output 3rd order intercept point oip3 8 9.5 ? dbm power output at 1 db gain compression p1 dboutput -1 1 ? dbm input return loss s11 ? -8 -7 db small signal gain s21 26 27 ? db reverse isolation s12 ? -47 -46 db output return loss s22 ? -9 -7.5 db 370 mhz ( figure 16 ) vcc 2.7v t a = 25 c supply current i cc ?4.75.6ma rf gain g 27.5 28.6 ? db noise figure nf ? 2.2 2.6 db output 3rd order intercept point oip3 9.2 10.7 ? dbm power output at 1 db gain compression p1 dboutput 0.7 2.2 ? dbm input return loss s11 ? -12 -10 db small signal gain s21 27 28.5 ? db reverse isolation s12 ? -47 -46 db output return loss s22 ? -12 -10 db 350 mhz ( figure 16 ) vcc 2.7v t a = 85 c supply current i cc ?5.36.2ma rf gain g 25.6 26.7 ? db noise figure nf ? 2.4 2.75 db output 3rd order intercept point oip3 9.2 10.7 ? dbm power output at 1 db gain compression p1 dboutput 01.8?dbm input return loss s11 ? -8 -7 db small signal gain s21 25.5 26.6 ? db reverse isolation s12 ? -47.5 -46.5 db output return loss s22 ? -9.7 -8 db
application circuits MBC13917 advance information, rev. 1.0 26 freescale semiconductor 350 mhz ( figure 16 ) vcc 2.7v t a = -40 c supply current i cc ?4.35.2ma rf gain g 27.8 29 ? db noise figure nf ? 1.7 2 db output 3rd order intercept point oip3 7.6 9 ? dbm power output at 1 db gain compression p1 dboutput 00.9?dbm input return loss s11 ? -8.7 -7 db small signal gain s21 27.4 28.4 ? db reverse isolation s12 ? -47.8 -46.8 db output return loss s22 ? -9.6 -8.5 db table 10. typical 350?370 mhz evaluation board performance (continued) characteristic symbol min typ max unit
application circuits MBC13917 advance information, rev. 1.0 freescale semiconductor 27 4.2 434 mhz application this application circuit was designed to prov ide nf = 2.3 db, s21 gain > 27 db for 434 mhz. ? component c4 has the greatest impact on return losses, nf, and gain, by moving the input and output on the smith chart. ? component l1 can be lowered to improve nf, by trading off s11 return loss. ? gain, oip3 and p1dboutput can be increased, by decreasing the re sistor at the output (without impacting nf or return losses). this application is intended for a range of desi gns, including tpms, rke, rf metering and key fob designs using a battery. figure 17 is the 434 mhz application schematic with p ackage pinouts and the circ uit component topology. figure 17. 434 mhz application schematic typical performance that can be expected from this circuit at 2.7v is listed in table 11 . table 11. typical 434 mhz evaluation board performance characteristic symbol min typ max unit 434 mhz ( figure 17 ) vcc 2.7v t a = 25 c supply current i cc ?4.75.6ma rf gain g 26 27 ? db noise figure nf ? 2.3 2.65 db output 3rd order intercept point oip3 9.5 10.9 ? dbm power output at 1 db gain compression p1 dboutput 12.2?dbm input return loss s11 ? -15 -10 db small signal gain s21 26 27 ? db reverse isolation s12 ? -46 -45 db output return loss s22 ? -19 -16 db rf out l1 39 nh c1 47 pf l2 33 nh c2 100 pf nc vc c rf in gnd 1 4 6 5 2 3 nc c3 .1uf gnd c4 2.4 pf r1 24 ohm
application circuits MBC13917 advance information, rev. 1.0 28 freescale semiconductor 434 mhz ( figure 17 ) vcc 2.7v t a = 85 c supply current i cc ?5.36.2ma rf gain g 25.5 26.5 ? db noise figure nf ? 2.65 3.05 db output 3rd order intercept point oip3 10 11.3 ? dbm power output at 1 db gain compression p1 dboutput 12?dbm input return loss s11 ? -15.5 -12 db small signal gain s21 24.8 25.9 ? db reverse isolation s12 ? -45 -44 db output return loss s22 ? -17.8 -14 db 434 mhz ( figure 17 ) vcc 2.7v t a = -40 c supply current icc ? 4.3 5.2 ma rf gain g 27.5 28.5 ? db noise figure nf ? 1.96 2.3 db output 3rd order intercept point oip3 8.5 10.3 ? dbm power output at 1 db gain compression p1 dboutput 0.8 1.8 ? dbm input return loss s11 ? -16 -10 db small signal gain s21 26.7 27.8 ? db reverse isolation s12 ? -44 -44 db output return loss s22 ? -20 -16 db table 11. typical 434 mhz evaluation board performance (continued) characteristic symbol min typ max unit
application circuits MBC13917 advance information, rev. 1.0 freescale semiconductor 29 4.3 900 mhz application this application was designed to provide nf = 1.2 db , s21 gain > 24 db, oip3 of 12.4 dbm with return losses better than -10 db at 900 mhz. figure 18 is the 900 mhz applicat ion schematic with package pinouts and the ci rcuit component topology. figure 18. 900 mhz application schematic typical performance that can be expected from this circuit at 2.7v is listed in table 12 . table 12. typical 900 mhz evaluation board performance characteristic symbol min typ max unit 900 mhz ( figure 18 ) vcc 2.7v t a = 25 c supply current i cc ?4.75.6ma rf gain g 22.5 24 ? db noise figure nf ? 1.19 1.5 db output 3rd order intercept point oip3 11 12.4 ? dbm power output at 1 db gain compression p1 dboutput 23.5?dbm input return loss s11 ? -10 -9 db small signal gain s21 23 24 ? db reverse isolation s12 ? -40 -39 db output return loss s22 ? -23 -16 db rf out l1 6.8 nh c1 47 pf l2 10 nh c2 47 pf nc vcc rf in . gnd 1 4 6 5 2 3 nc c3 .1uf gnd c4 2 pf c5 3 pf
application circuits MBC13917 advance information, rev. 1.0 30 freescale semiconductor 900 mhz ( figure 18 ) vcc 2.7v t a = 85 c supply current i cc ?5.36.2ma rf gain g 21.5 23 ? db noise figure nf ? 1.3 1.65 db output 3rd order intercept point oip3 10 11.6 ? dbm power output at 1 db gain compression p1 dboutput 12.5?dbm input return loss s11 ? -9.5 -9 db small signal gain s21 21 22.8 ? db reverse isolation s12 ? -40.7 -39.5 db output return loss s22 ? -24.7 -18 db 900 mhz ( figure 18 ) vcc 2.7v t a = -40 c supply current i cc ?4.35.2ma rf gain g 24.1 25.6 ? db noise figure nf ? 0.95 1.3 db output 3rd order intercept point oip3 10 11.4 ? dbm power output at 1 db gain compression p1 dboutput 1.2 2.65 ? dbm input return loss s11 ? -11.5 -10 db small signal gain s21 24 25.5 ? db reverse isolation s12 ? -41 -40 db output return loss s22 ? -18.8 -10 db table 12. typical 900 mhz evaluation board performance (continued) characteristic symbol min typ max unit
application circuits MBC13917 advance information, rev. 1.0 freescale semiconductor 31 4.4 1900 mhz application this application was designed to provide nf = 2.0 db , s21 gain > 14.5 db, oip3 of 8.5 dbm with return losses better than -10 db at 1900 mhz. typical performa nce that can be expected from this circuit at 2.7v is listed in table 13 . figure 19 is the 1900 mhz application schematic with pack age pinouts and the circuit component topology. figure 19. 1900 mhz a pplication schematic table 13 provides the typical perfor mance of a 1900 mhz application. table 13. typical 1900 mhz evaluation board performance characteristic symbol min typ max unit 1900 mhz ( figure 19 ) vcc 2.7v t a = 25 c supply current i cc ?4.75.6ma rf gain g 13.5 14.9 ? db noise figure nf ? 1.8 2.15 db output 3rd order intercept point oip3 7 8.5 ? dbm power output at 1.0 db gain compression p1 dboutput -2.5 -1.1 ? dbm input return loss s11 ? -13 -10 db small signal gain s21 13.8 14.8 ? db reverse isolation s12 ? -42.5 -41.5 db output return loss s22 ? -11.8 -10 db rf out l1 3.3 nh c1 3.3 pf l2 10 nh c3 33 pf nc rf in . gnd 1 4 6 5 2 3 nc c4 .1uf gnd c2 2.7 pf l3 5. 6 nh
application circuits MBC13917 advance information, rev. 1.0 32 freescale semiconductor 1900 mhz ( figure 19 ) vcc 2.7v t a = 85 c supply current i cc ?5.36.2ma rf gain g 12.7 13.7 ? db noise figure nf ? 2.5 2.85 db output 3rd order intercept point oip3 7 8.3 ? dbm power output at 1.0 db gain compression p1 dboutput -2.5 -1 ? dbm input return loss s11 ? -10.7 -9 db small signal gain s21 12.6 13.6 ? db reverse isolation s12 ? -41.7 -40.7 db output return loss s22 ? -13 -10 db 1900 mhz ( figure 19 ) vcc 2.7v t a = -40 c supply current i cc ?4.35.2ma rf gain g 15.4 16.4 ? db noise figure nf ? 1.48 1.8 db output 3rd order intercept point oip3 7.1 8.1 ? dbm power output at 1.0 db gain compression p1 dboutput -2.5 -1.3 ? dbm input return loss s11 ? -14 -10 db small signal gain s21 15.1 16.1 ? db reverse isolation s12 ? -41.5 -40.5 db output return loss s22 ? -10 -9 db table 13. typical 1900 mhz evaluation board performance (continued) characteristic symbol min typ max unit
printed circuit board and bill of materials MBC13917 advance information, rev. 1.0 freescale semiconductor 33 5 printed circuit board and bill of materials figure 20 is the drawing of the printed circuit board. figure 21 through figure 26 are drawings of the evaluation boards used for each of the applicati on frequency designs descri bed in section 4. these drawings show the boards with the circuit matching components pla ced and identified. figure 20. printed circuit board figure 21 is a picture of a typical assem bled evaluation board similar to the ones in the evaluation kits. figure 21. typical applicatio n circuit evaluation board note: dimensions are in inches and [mm]. soldering note: the center flag under the part must be soldered down to ground on the board.
printed circuit board and bill of materials MBC13917 advance information, rev. 1.0 34 freescale semiconductor figure 22. 350 mhz application board drawing figure 23. 434 mhz application board drawing figure 24. 900 mhz application board drawing
printed circuit board and bill of materials MBC13917 advance information, rev. 1.0 freescale semiconductor 35 figure 25. 1900 mhz application board drawing the bill of materials for the applicati on frequency circuit boa rds is listed in table 14 . the value, case size, manufacturer and circuit function of each component is provided. table 14. bill of materials for the application circuit boards component value case manufacturer comments 350?370 mhz application circuit ( figure 23 ) c1 47 pf 402 murata input match, dc block c2 100 pf 402 murata 350 mhz bypass c3 0.1 uf 402 murata rf bypass c4 3.6 pf 402 murata output match, dc block c5 3 pf 402 murata output match l1 39 nh 402 murata input match l2 47 nh 402 murata output match, dc feed r1 24 402 murata lower gain, improve ip3, p1db 434 mhz application circuit ( figure 23 ) c1 47 pf 402 murata dc block, input match c2 100 pf 402 murata rf bypass c3 0.1 uf 402 murata low freq bypass to improve ip3 c4 2.4 pf 402 murata dc block, output match l1 39 nh 402 murata input match l2 33 nh 402 murata dc feed through, output match r1 24 402 koa lower gain, improve ip3, p1db
printed circuit board and bill of materials MBC13917 advance information, rev. 1.0 36 freescale semiconductor 900 mhz application circuit ( figure 24 ) c1 47 pf 402 murata input match, dc block c2 47 pf 402 murata 900 mhz bypass c3 0.1 uf 402 murata rf bypass c4 2 pf 402 murata output match, dc block c5 3 pf 402 murata output match l1 6.8 nh 402 murata input match l2 10 nh 402 murata output match, dc feed 1900 mhz application circuit ( figure 24 ) c1 3.3 pf 402 murata input match, dc block c2 2.7 pf 402 murata output match, dc block c3 33 pf 402 murata 1900 mhz bypass c4 0.1 uf 402 murata rf bypass l1 3.3 nh 402 murata input match l2 10 nh 402 murata output match, dc feed l3 5.6 nh 402 murata output match table 14. bill of materials for the application circuit boards (continued) component value case manufacturer comments
packaging MBC13917 advance information, rev. 1.0 freescale semiconductor 37 6 packaging figure 26. outline dimensions for mlpd-6
product documentation MBC13917 advance information, rev. 1.0 38 freescale semiconductor figure 27. mlpd-6 package details 7 product documentation this data sheet is labele d as a particular type: product preview, advance information, or technical data. definitions of these types are available at: ht tp://www.freescale.com on the documentation page. 8 revision history table 15. revision history revision change description 1.0 initial release
notes MBC13917 advance information, rev. 1.0 freescale semiconductor 39
how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provid ed solely to enable system and software implementers to use freescale semiconduc tor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specif ically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data s heets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applic ations intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale? and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006-2010. all rights reserved. rohs-compliant and/or pb-free versions of freescale products have the functionality and electrical characteristics as thei r non-rohs-compliant and/or non-pb-free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www.freescale.com/epp . document number: MBC13917 rev. 1.0 12/2010

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