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M28F101 1 mb (128k x 8, chip erase) flash memory april 1997 1/23 ai00666b 17 a0-a16 w dq0-dq7 v pp v cc M28F101 g e v ss 8 figure 1. logic diagram 5v 10% supply voltage 12v programming voltage fast access time: 70ns byte programing time: 10 m s typical electrical chip erase in 1s range low power consumption stand-by current: 100 m a max 10,000 erase/program cycles integrated erase/program-stop timer otp compatible packages and pinouts electronic signature manufacturer code: 20h device code: 07h description the M28F101 flash memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. it is or- ganised as 128k bytes of 8 bits. it uses a command register architecture to select the operating modes and thus provides a simple microprocessor inter- face. the M28F101 flash memory is suitable for applications where the memory has to be repro- grammed in the equipment. the access time of 70ns makes the device suitable for use in high speed microprocessor systems. a0-a16 address inputs dq0-dq7 data inputs / outputs e chip enable g output enable w write enable v pp program supply v cc supply voltage v ss ground table 1. signal names plcc32 (k) 32 1 pdip32 (p) tsop32 (n) 8 x 20 mm
ai00668 nc a13 a10 dq5 17 a1 a0 dq0 dq1 dq2 dq3 dq4 a7 a4 a3 a2 a6 a5 9 w a8 1 a16 a9 dq7 a12 a14 32 v pp v cc M28F101 a15 a11 dq6 g e 25 v ss figure 2b. lcc pin connections a1 a0 dq0 a7 a4 a3 a2 a6 a5 a13 a10 a8 a9 dq7 a14 a11 g e dq5 dq1 dq2 dq3 v ss dq4 dq6 nc w a16 a12 v pp v cc a15 ai00667 M28F101 8 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 figure 2a. dip pin connections a1 a0 dq0 a7 a4 a3 a2 a6 a5 a13 a10 a8 a9 dq7 a14 a11 g e dq5 dq1 dq2 dq3 dq4 dq6 nc w a16 a12 v pp v cc a15 ai00669b M28F101 (normal) 8 1 9 16 17 24 25 32 v ss figure 2c. tsop pin connections a1 a0 dq0 a7 a4 a3 a2 a6 a5 a13 a10 a8 a9 dq7 a14 a11 g e dq5 dq1 dq2 dq3 dq4 dq6 nc w a16 a12 v pp v cc a15 ai00670c M28F101 (reverse) 8 1 9 16 17 24 25 32 v ss figure 2d. tsop reverse pin connections warning: nc = not connected. warning: nc = not connected. warning: nc = not connected. warning: nc = not connected. 2/23 M28F101
symbol parameter value unit t a ambient operating temperature 40 to 125 c t stg storage temperature 65 to 150 c v io input or output voltages 0.6 to 7 v v cc supply voltage 0.6 to 7 v v a9 a9 voltage 0.6 to 13.5 v v pp program supply voltage, during erase or programming 0.6 to 14 v note: except for the rating ooperating temperature rangeo, stresses above those listed in the table oabsolute maximum ratingso may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. refer also to the sgs-thomson sure program and other relevant quality documents. table 2. absolute maximum ratings device operation the M28F101 flash memory employs a technol- ogy similar to a 1 megabit eprom but adds to the device functionality by providing electrical erasure and programming. these functions are managed by a command register. the functions that are addressed via the command register depend on the voltage applied to the v pp , program voltage, input. when v pp is less than or equal to 6.5v, the command register is disabled and M28F101 func- tions as a read only memory providing operating modes similar to an eprom (read, output dis- able, electronic signature read and standby). when v pp is raised to 12v the command regsiter is enabled and this provides, in addition, erase and program operations. read only modes, v pp 6.5v for all read only modes, except standby mode, the write enable input w should be high. in the standby mode this input is don't care. read mode . the M28F101 has two enable inputs, e and g, both of which must be low in order to output data from the memory. the chip enable (e) is the power control and should be used for device selection. output enable (g) is the output control and should be used to gate data on to the output, independant of the device selection. standby mode. in the standby mode the maxi- mum supply current is reduced. the device is placed in the standby mode by applying a high to the chip enable (e) input. when in the standby mode the outputs are in a high impedance state, independant of the output enable (g) input. output disable mode . when the output enable (g) is high the outputs are in a high impedance state. electronic signature mode. this mode allows the read out of two binary codes from the device which identify the manufacturer and device type. this mode is intended for use by programming equip- ment to automatically select the correct erase and programming algorithms. the electronic signature mode is active when a high voltage (11.5v to 13v) is applied to address line a9 with e and g low. with a0 low the output data is the manufacturer code, when a0 is high the output is the device type code. all other address lines should be maintained low while reading the codes. the electronic signature may also be accessed in read/write modes. read/write modes, 11.4v v pp 12.6v when v pp is high both read and write operations may be performed. these are defined by the con- tents of an internal command register. commands may be written to this register to set-up and exe- cute, erase, erase verify, program, program verify and reset modes. each of these modes needs 2 cycles. eah mode starts with a write operation to set-up the command, this is followed by either read or write operations. the device expects the first cycle to be a write operation and does not corrupt data at any location in the memory. read mode is set-up with one cycle only and may be followed by any number of read operations to output data. electronic signature read mode is set-up with one cycle and followed by a read cycle to output the manufacturer or device codes. 3/23 M28F101
command cycles 1st cycle 2nd cycle operation a0-a16 dq0-dq7 operation a0-a16 dq0-dq7 read 1 write x 00h electronic signature (2) 2 write x 90h read 00000h 20h read 00001h 07h setup erase/ 2 write x 20h erase write x 20h erase verify 2 write a0-a16 a0h read x data output setup program/ 2 write x 40h program write a0-a16 data input program verify 2 write x c0h read x data output reset 2 write x ffh write x ffh notes: 1. x = v il or v ih . 2. refer also to the electronic signature table. table 5. commands (1) identifier a0 dq7 dq6 dq5 dq4 dq3 dq2 dq1 dq0 hex data manufacturer's code v il 00100000 20h device code v ih 00000111 07h table 4. electronic signature v pp operation e g w a9 dq0 - dq7 read only v ppl read v il v il v ih a9 data output output disable v il v ih v ih x hi-z standby v ih x x x hi-z electronic signature v il v il v ih v id codes read/write (2) v pph read v il v il v ih a9 data output write v il v ih v il pulse a9 data input output disable v il v ih v ih x hi-z standby v ih x x x hi-z notes: 1. x = v il or v ih . 2. refer also to the command table. table 3. operations (1) 4/23 M28F101
ai01275 3v sram interface 0v 1.5v 2.4v eprom interface 0.45v 2.0v 0.8v figure 3. ac testing input output waveform ai01276 1.3v out c l = 30pf or 100pf c l = 30pf for sram interface c l = 100pf for eprom interface c l includes jig capacitance 3.3k w 1n914 device under test figure 4. ac testing load circuit sram interface levels eprom interface levels input rise and fall times 10ns 10ns input pulse voltages 0 to 3v 0.45v to 2.4v input and output timing ref. voltages 1.5v 0.8v and 2v table 6. ac measurement conditions symbol parameter test condition min max unit c in input capacitance v in =0v 6 pf c out output capacitance v out =0v 12 pf note: 1. sampled only, not 100% test.ed table 7. capacitance (1) (t a =25 c, f = 1 mhz ) a write to the command register is made by bringing w low while e is low. the falling edge of w latches addresses, while the rising edge latches data, which are used for those commands that require address inputs, command input or provide data output. the supply voltage v cc and the program voltage v pp can be applied in any order. when the device is powered up or when v pp is 6.5v the contents of the command register defaults to 00h, thus automatically setting-up read operations. in addi- tion a specific command may be used to set the command register to 00h for reading the memory. the system designer may chose to provide a con- stant high v pp and use the register commands for all operations, or to switch the v pp from low to high only when needing to erase or program the mem- ory. all command register access is inhibited when v cc falls below the erase/write lockout voltage (v lko ) of 2.5v. if the device is deselected during erasure, pro- gramming or verification it will draw active supply currents until the operations are terminated. the device is protected against stress caused by long erase or program times. if the end of erase or programming operations are not terminated by a verify cycle within a maximum time permitted, an internal stop timer automatically stops the opera- tion. the device remains in an inactive state, ready to start a verify or reset mode operation. read/write modes (cont'd) 5/23 M28F101
symbol parameter test condition min max unit i li input leakage current 0v v in v cc 1 m a i lo output leakage current 0v v out v cc 10 m a i cc supply current (read) e = v il , f = 6mhz 30 ma i cc1 supply current (standby) ttl e = v ih 1ma supply current (standby) cmos e = v cc 0.2v 50 m a i cc2 (1) supply current (programming) during programming 10 ma i cc3 (1) supply current (program verify) during verify 15 ma i cc4 (1) supply current (erase) during erasure 15 ma i cc5 (1) supply current (erase verify) during erase verify 15 ma i lpp program leakage current v pp v cc 10 m a i pp program current (read or standby) v pp >v cc 120 m a v pp v cc 10 m a i pp1 (1) program current (programming) v pp =v pph , during programming 30 ma i pp2 (1) program current (program verify) v pp =v pph , during verify 5 ma i pp3 (1) program current (erase) v pp =v pph , during erase 30 ma i pp4 (1) program current (erase verify) v pp =v pph , during erase verify 5 ma v il input low voltage 0.5 0.8 v v ih input high voltage ttl 2 v cc + 0.5 v input high voltage cmos 0.7 v cc v cc + 0.5 v v ol output low voltage i ol = 5.8ma (grade 1) 0.45 v i ol = 2.1ma (grade 6) 0.45 v v oh output high voltage cmos i oh = 100 m a 4.1 v i oh = 2.5ma 0.85 v cc v output high voltage ttl i oh = 2.5ma 2.4 v v ppl program voltage (read operations) 0 6.5 v v pph program voltage (read/write operations) 11.4 12.6 v v id a9 voltage (electronic signature) 11.5 13 v i id (1) a9 current (electronic signature) a9 = v id 200 m a v lko supply voltage, erase/program lock-out 2.5 v note: 1. not 100% tested. characterisation data available. table 8. dc characteristics (t a = 0 to 70 c, 40 to 85 c or 40 to 125 c; v cc =5v 10%) 6/23 M28F101
read mode. the read mode is the default at power up or may be set-up by writing 00h to the command register. subsequent read operations output data from the memory. the memory remains in the read mode until a new command is written to the command register. electronic signature mode. in order to select the correct erase and programming algorithms for on- board programming, the manufacturer and device codes may be read directly. it is not neccessary to apply a high voltage to a9 when using the com- mand register. the electronic signature mode is set-up by writing 90h to the command register. the following read cycles, with address inputs 00000h or 00001h, output the manufacturer or device type codes. the command is terminated by writing an- other valid command to the command register (for example reset). symbol alt parameter test condition M28F101 unit -70 -90 -100 v cc =5v 5% v cc =5v 10% v cc =5v 10% sram interface eprom interface eprom interface min max min max min max t whgl write enable high to output enable low 666 m s t avav t rc read cycle time e = v il ,g=v il 70 90 100 ns t avqv t acc address valid to output valid e=v il ,g=v il 70 90 100 ns t elqx (1) t lz chip enable low to output transition g=v il 000ns t elqv t ce chip enable low to output valid g=v il 70 90 100 ns t glqx (1) t olz output enable low to output transition e=v il 000ns t glqv t oe output enable low to output valid e=v il 40 40 45 ns t ehqz (1) chip enable high to output hi-z g=v il 0 30 0 45 0 45 ns t ghqz (1) t df output enable high to output hi-z e=v il 0 30 0 30 0 30 ns t axqx t oh address transition to output transition e=v il ,g=v il 000ns note: 1. sampled only, not 100% tested table 9a. read only mode ac characteristics (t a = 0 to 70 c, 40 to 85 c or 40 to 125 c; 0v v pp 6.5v) 7/23 M28F101
symbol alt parameter test condition M28F101 unit -120 -150 -200 v cc =5v 10% v cc =5v 10% v cc =5v 10% eprom interface eprom interface eprom interface min max min max min max t whgl write enable high to output enable low 666 m s t avav t rc read cycle time e = v il ,g=v il 120 150 200 ns t avqv t acc address valid to output valid e=v il ,g=v il 120 150 200 ns t elqx (1) t lz chip enable low to output transition g=v il 000ns t elqv t ce chip enable low to output valid g=v il 120 150 200 ns t glqx (1) t olz output enable low to output transition e=v il 000ns t glqv t oe output enable low to output valid e=v il 50 55 60 ns t ehqz (1) chip enable high to output hi-z g=v il 055055060ns t ghqz (1) t df output enable high to output hi-z e=v il 030035040ns t axqx t oh address transition to output transition e=v il ,g=v il 000ns note: 1. sampled only, not 100% tested table 9b. read only mode ac characteristics ((t a = 0 to 70 c, 40 to 85 c or 40 to 125 c; 0v v pp 6.5v) erase and erase verify modes. the memory is erased by first programming all bytes to 00h, the erase command then erases them to ffh. the erase verify command is then used to read the memory byte-by-byte for a content of ffh. the erase mode is set-up by writing 20h to the com- mand register. the write cycle is then repeated to start the erase operation. erasure starts on the rising edge of w during this second cycle. erase is followed by an erase verify which reads an ad- dressed byte. erase verify mode is set-up by writing a0h to the command register and at the same time supplying the address of the byte to be verified. the rising edge of w during the set-up of the first erase verify mode stops the erase operation. the following read cycle is made with an internally generated margin voltage applied; reading ffh indicates that all bits of the addressed byte are fully erased. the whole contents of the memory are verified by re- peating the erase verify operation, first writing the set-up code a0h with the address of the byte to be verified and then reading the byte contents in a second read cycle. 8/23 M28F101
ai00672 twhgl tvphel valid telqv tehqz tavqv a0-a16 e g dq0-dq7 data out command v pp w taxqx tghqz tglqv read read set-up twlwh twhdx tdvwh tghwl telwl twheh figure 6. read command waveforms ai00671 tavav tavqv taxqx telqv telqx tehqz tglqv tglqx tghqz data out a0-a16 e g dq0-dq7 figure 5. read mode ac waveforms 9/23 M28F101
ai00673 twhgl tvphel 00000h-00001h telqv tehqz tavqv a0-a16 e g dq0-dq7 data out command v pp w taxqx tghqz tglqv read manufacturer or device read electronic signature set-up twlwh twhdx tdvwh tghwl telwl twheh figure 7. electronic signature command waveforms as the erase algorithm flow chart shows, when the data read during erase verify is not ffh, another erase operation is performed and verification con- tinues from the address of the last verifiedbyte. the command is terminated by writing another valid command to the command register (for example program or reset). program and program verify modes. the pro- gram mode is set-up by writing 40h to the command register. this is followed by a second write cycle which latches the address and data of the byte to be programmed. the rising edge of w during this secind cycle starts the programming operation. programming is followed by a program verify of the data written. programverify mode is set-up by writing c0h to the command register. the rising edge of w during the set-up of the program verify mode stops the pro- gramming operation. the following read cycle, of the address already latched during programming, is made with an internally generated margin volt- age applied,reading valid data indicates that all bits have been programmed. reset mode. this command is used to safely abort erase or program modes. the reset mode is set-up and performed by writing ffh two times to the command register. the command should be followed by writing a valid command to the the command register (for example read). read/write modes (cont'd) 10/23 M28F101
symbol alt parameter M28F101 unit -70 -90 -100 v cc =5v 5% v cc =5v 10% v cc =5v 10% sram interface eprom interface eprom interface min max min max min max t vphel v pp high to chip enable low 1 1 1 m s t vphwl v pp high to write enable low 1 1 1 m s t whwh3 t wc write cycle time 70 90 100 ns t avwl t as address valid to write enable low 0 0 0 ns t avel address valid to chip enable low 0 0 0 ns t wlax t ah write enable low to address transition 40 40 40 ns t elax chip enable low to address transition 50 60 60 ns t elwl t cs chip enable low to write enable low 10 15 15 ns t wlel write enable low to chip enable low 0 0 0 ns t ghwl output enable high to write enable low 000 m s t ghel output enable high to chip enable low 0 0 0 m s t dvwh t ds input valid to write enable high 30 40 40 ns t dveh input valid to chip enable high 30 35 40 ns t wlwh t wp write enable low to write enable high (write pulse) 35 40 40 ns t eleh chip enable low to chip enable high (write pulse) 35 45 45 ns t whdx t dh write enable high to input transition 10 10 10 ns t ehdx chip enable high to input transition 10 10 10 ns t whwh1 duration of program operation 9.5 9.5 9.5 m s t eheh1 duration of program operation 9.5 9.5 9.5 m s t whwh2 duration of erase operation 9.5 9.5 9.5 ms t wheh t ch write enable high to chip enable high 0 0 0 ns t ehwh chip enable high to write enable high 0 0 0 ns t whwl t wph write enable high to write enable low 20 20 20 ns t ehel chip enable high to chip enable low 20 20 20 ns t whgl write enable high to output enable low 666 m s t ehgl chip enable high to output enable low 6 6 6 m s t avqv t acc addess valid to data output 70 90 100 ns t elqx (1) t lz chip enable low to output transition 0 0 0 ns t elqv t ce chip enable low to output valid 70 90 100 ns t glqx (1) t olz output enable low to output transition 0 0 0 ns t glqv t oe output enable low to output valid 40 40 45 ns t ehqz (1) chip enable high to output hi-z 30 40 40 ns t ghqz (1) t df output enable high to output hi-z 30 30 30 ns t axqx t oh address transition to output transition 0 0 0 ns note: 1. sampled only, not 100% tested. table 10a. read/write mode ac characteristics, w and e controlled (t a = 0 to 70 c, 40 to 85 c or 40 to 125 c) 11/23 M28F101
symbol alt parameter M28F101 unit -120 -150 -200 v cc =5v 10% v cc =5v 10% v cc =5v 10% eprom interface eprom interface eprom interface min max min max min max t vphel v pp high to chip enable low 1 1 1 m s t vphwl v pp high to write enable low 1 1 1 m s t whwh3 t wc write cycle time 120 150 200 ns t avwl t as address valid to write enable low 0 0 0 ns t avel address valid to chip enable low 0 0 0 ns t wlax t ah write enable low to address transition 60 60 75 ns t elax chip enable low to address transition 80 80 80 ns t elwl t cs chip enable low to write enable low 20 20 20 ns t wlel write enable low to chip enable low 0 0 0 ns t ghwl output enable high to write enable low 000 m s t ghel output enable high to chip enable low 0 0 0 m s t dvwh t ds input valid to write enable high 50 50 50 ns t dveh input valid to chip enable high 50 50 50 ns t wlwh t wp write enable low to write enable high (write pulse) 60 60 60 ns t eleh chip enable low to chip enable high (write pulse) 70 70 70 ns t whdx t dh write enable high to input transition 10 10 10 ns t ehdx chip enable high to input transition 10 10 10 ns t whwh1 duration of program operation 9.5 9.5 9.5 m s t eheh1 duration of program operation 9.5 9.5 9.5 m s t whwh2 duration of erase operation 9.5 9.5 9.5 ms t wheh t ch write enable high to chip enable high 0 0 0 ns t ehwh chip enable high to write enable high 0 0 0 ns t whwl t wph write enable high to write enable low 20 20 20 ns t ehel chip enable high to chip enable low 20 20 20 ns t whgl write enable high to output enable low 666 m s t ehgl chip enable high to output enable low 6 6 6 m s t avqv t acc addess valid to data output 120 150 200 ns t elqx (1) t lz chip enable low to output transition 0 0 0 ns t elqv t ce chip enable low to output valid 120 150 200 ns t glqx (1) t olz output enable low to output transition 0 0 0 ns t glqv t oe output enable low to output valid 50 55 60 ns t ehqz (1) chip enable high to output hi-z 50 55 60 ns t ghqz (1) t df output enable high to output hi-z 30 35 40 ns t axqx t oh address transition to output transition 0 0 0 ns note: 1. sampled only, not 100% tested. table 10b. read/write mode ac characteristics, w and e controlled (t a = 0 to 70 c, 40 to 85 c or 40 to 125 c) 12/23 M28F101
ai00674 twheh tvphel valid telqv tehqz tavwl a0-a16 e g dq0-dq7 command v pp w twlax tghqz twhwh2 verify read erase set-up twlwh twhdx tdvwh tghwl telwl twheh command twhgl twhwl command twhdx tdvwh data out twhwh3 erase operation twlwh tglqv erase set-up (repeat of 1st cycle) erase verify set-up telwl figure 8. erase set-up and erase verify commands waveforms, w controlled 13/23 M28F101
ai01313 tehwh tvphwl valid tglqv tehqz tavel a0-a16 w g dq0-dq7 command v pp e telax tghqz teheh2 verify read erase set-up teleh tehdx tdveh tghel twlel tehwh command tehgl tehel command tehdx tdveh data out twhwh3 erase operation teleh telqv erase set-up (repeat of 1st cycle) erase verify set-up twlel figure 9. erase set-up and erase verify commands waveforms, e controlled 14/23 M28F101
ai00675 twheh tvphel valid telqv tehqz tavwl a0-a16 e g dq0-dq7 command v pp w twlax tghqz twhwh1 verify read program set-up twlwh twhdx tdvwh tghwl telwl twheh data in twhgl twhwl command twhdx tdvwh data out twhwh3 program operation twlwh tglqv address and data latch program verify set-up telwl twhdx tdvwh telwl twlwh twheh figure 10. program set-up and program verify commands waveforms, w controlled 15/23 M28F101
ai00676 tehwh tvphel valid telqv tehqz tavel a0-a16 g dq0-dq7 command v pp w telax tghqz teheh1 verify read program set-up teleh tehdx tdveh tghel twlel tehwh data in tehgl tehel command tehdx tdveh data out twhwh3 program operation teleh tglqv address and data latch program verify set-up twlel tehdx tdveh twlel teleh tehwh e figure 11. program set-up and program verify commands waveforms, e controlled 16/23 M28F101
presto f erase algorithm the presto f erase algorithm guarantees that the device will be erased in a reliable way. the algorithm first programms all bytes to 00h in order to ensure uniform erasure. the programming fol- lows the presto f programming algorithm. erase is set-up by writing 20h to the command register, the erasure is started by repeating this write cycle. erase verify is set-up by writing a0h to the command register together with the address of the byte to be verified. the subsequent read cycle reads the data which is compared to ffh. erase verify begins at address 0000h and continues to the last address or until the comparison of the data to 0ffh fails. if this occurs, the address of the last byte checked is stored and a new erase operation performed. erase verify then continues from the address of the stored location. presto f program algorithm the presto f programming algorithm applies a series of 10 m s programming pulses to a byte until a correct verify occurs. up to 25 programming operations are allowed for one byte. program is set-up by writing 40h to the command register, the programming is started after the next write cycle which also latches the address and data to be programmed. program verify is set-up by writing c0h to the command register, followed by a read cycle and a compare of the data read to the data expected. during program and program verify op- erations a margin mode circuit is activated to guarantee that the cell is programmed with a safety margin. program all bytes to 00h ai00678 n=0, addr=00000h last addr erase set-up wait 10ms erase verify latch addr. read data output data ok wait 6 m s ++n addr++ read command v pp = 12v v pp < 6.5v fail v pp < 6.5v, pass yes no yes no yes no limit figure 12. erasing flowchart ai00677 n=0 last addr program verify wait 10 m s program set-up latch addr, data read data output data ok wait 6 m s ++n =25 addr++ read command v pp = 12v v pp < 6.5v fail v pp < 6.5v, pass yes no yes no yes no figure 13. programming flowchart limit: 1000 at grade 1; 6000 at grades 3 & 6. 17/23 M28F101
ordering information scheme operating voltage f5v speed -70 70ns -90 90ns -100 100ns -120 120ns -150 150ns -200 200ns power supplies blank v cc 10% xv cc 5% package p pdip32 k plcc32 n tsop32 8 x 20mm option r reverse pinout tr tape & reel packing temp. range 1 0 to 70 c 3 40 to 125 c 6 40 to 85 c example: M28F101 -70 x n 1 tr devices are shipped from the factory with the memory content erased (to ffh). for a list of available options (speed, package, etc...) or for further information on any aspect of this device, please contact the sgs-thomson sales office nearest to you. 18/23 M28F101
pdip32 - 32 pin plastic dip, 600 mils width pdip a2 a1 a l b1 b e1 d s e1 e n 1 c a ea symb mm inches typ min max typ min max a 4.83 0.190 a1 0.38 0.015 a2 b 0.41 0.51 0.016 0.020 b1 1.14 1.40 0.045 0.055 c 0.20 0.30 0.008 0.012 d 41.78 42.04 1.645 1.655 e 15.24 15.88 0.600 0.625 e1 13.46 13.97 0.530 0.550 e1 2.54 0.100 ea 15.24 0.600 l 3.18 3.43 0.125 0.135 s 1.78 2.03 0.070 0.080 a 0 15 0 15 n32 32 pdip32 drawing is not to scale. 19/23 M28F101
plcc d ne e1 e 1n d1 nd cp b d2/e2 e b1 a1 a symb mm inches typ min max typ min max a 2.54 3.56 0.100 0.140 a1 1.52 2.41 0.060 0.095 b 0.33 0.53 0.013 0.021 b1 0.66 0.81 0.026 0.032 d 12.32 12.57 0.485 0.495 d1 11.35 11.56 0.447 0.455 d2 9.91 10.92 0.390 0.430 e 14.86 15.11 0.585 0.595 e1 13.89 14.10 0.547 0.555 e2 12.45 13.46 0.490 0.530 e 1.27 0.050 n32 32 nd 7 7 ne 9 9 cp 0.10 0.004 plcc32 drawing is not to scale. plcc32 - 32 lead plastic leaded chip carrier, rectangular 20/23 M28F101
tsop-a d1 e 1n cp b e a2 a n/2 d die c l a1 a symb mm inches typ min max typ min max a 1.04 1.24 0.041 0.049 a1 0.05 0.20 0.002 0.008 a2 0.95 1.06 0.037 0.042 b 0.15 0.27 0.006 0.011 c 0.10 0.21 0.004 0.008 d 19.90 20.12 0.783 0.792 d1 18.24 18.49 0.718 0.728 e 7.90 8.10 0.311 0.319 e 0.50 0.020 l 0.30 0.70 0.012 0.028 a 0 5 0 5 n32 32 cp 0.10 0.004 tsop32 drawing is not to scale. tsop32 normal pinout - 32 lead plastic thin small outline, 8 x 20mm 21/23 M28F101
symb mm inches typ min max typ min max a 1.04 1.24 0.041 0.049 a1 0.05 0.20 0.002 0.008 a2 0.95 1.06 0.037 0.042 b 0.15 0.27 0.006 0.011 c 0.10 0.21 0.004 0.008 d 19.90 20.12 0.783 0.792 d1 18.24 18.49 0.718 0.728 e 7.90 8.10 0.311 0.319 e 0.50 0.020 l 0.30 0.70 0.012 0.028 a 0 5 0 5 n32 32 cp 0.10 0.004 tsop32 tsop32 reverse pinout - 32 lead plastic thin small outline, 8 x 20mm tsop-b d1 e 1n cp b e a2 a n/2 d die c l a1 a drawing is not to scale. 22/23 M28F101
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1997 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. 23/23 M28F101

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