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technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n elektrische eigenschften / electrical properties h?chstzul?ssige werte / maximum rated values periodische vorw?rts- und rckw?rts-spitzensperrspannung t vj = - 40c...t vj max v drm , v rrm 1200 1400 v repetitive peak forward off-state and reverse voltages 1600 1800 v 1) vorw?rts-sto?spitzensperrspannung t vj = - 40c...t vj max v dsm 1200 1400 v non-repetitive peak foward off-state voltage 1600 1800 v rckw?rts-sto?spitzensperrspannung t vj = + 25c...t vj max v rsm 1300 1500 v non-repetitive peak reverse voltage 1700 1900 v durchla?strom-grenzeffektivwert i trsmsm 800 a rmsm on-state current dauergrenzstrom t c = 85 c i tavm 508 a average on-state current sto?strom-grenzwert t vj = 25c, t p = 10 ms i tsm 8000 a surge current t vj = t vj max , t p = 10 ms 6900 a grenzlastintegral t vj = 25c, t p = 10ms i2t 320 a2s *10 3 i2t-value t vj = t vj max , t p = 10ms 238 a2s *10 3 kritische stromsteilheit din iec 747-6 (di t /dt) cr 120 a/s critical rate of rise of on-state current f=50 hz, v l = 10v, i gm = 1 a di g /dt = 1 a/s kritische spannungssteilheit t vj = t vj max , v d = 0,67 v drm (dv d /dt) cr 1000 v/s critical rate of rise of off-state voltage 5.kennbuchstabe / 5th letter f charakteristische werte / characteristic values durchla?spannung t vj = t vj max , i t = 1600 a v t max. 1,92 v on-state voltage schleusenspannung t vj = t vj max v t(to) 0,8 v threshold voltage ersatzwiderstand t vj = t vj max r t 0,6 m w slope resistance durchla?kennlinie t vj = t vj max a= 0,93854 on-state voltage b= 3,384e-04 v t = a + b x i t + c x ln (i t + 1) + d x ? i t c=-5,551e-02 d= 2,001e-02 zndstrom t vj = 25c, v d = 6 v i gt max. 200 ma gate trigger current zndspannung t vj = 25c, v d = 6v v gt max. 2 v gate trigger voltage nicht zndener steuerstrom t vj = t vj max , v d = 6 v i gd max. 10 ma gate non-trigger current t vj = t vj max ,v d = 0,5 v drm max. 5 ma nicht zndene steuerspannung t vj = t vj max ,v d = 0,5 v drm v gd max. 0,2 mv gate non-trigger voltage haltestrom t vj = 25c, v d = 6 v, r a = 5 w i h max. 300 ma holding current einraststrom t vj = 25c, v d = 6 v, r gk> = 10 w i l max. 1200 ma latching current i gm = 1 a, di g /dt = 1 a/s t g = 20 s vorw?rts- und rckw?rts-sperrstrom t vj = t vj max i d , i r max. 50 ma forward off-state and reverse currents v d = v drm , vr = v rrm zndverzug din iec 747-6 t gd max. 4 s gate controlled delay time t vj = 25c i gm = 1 a, di g /dt = 1 a/s 1) 1800 v auf anfrage / 1800 v on demand sz-am / 99-07-26, k.-a.rther a seite/page 1
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n elektrische eigenschften / electrical properties charakteristische werte / characteristic values freiwerdezeit t vj = t vj max , i tm =i tavm t q circuit commutatet turn-off time v rm =100v, v dm = 0,67 v drm dv d /dt = 20 v/s, -di t /dt = 10 a/s 4. kennbuchstabe / 4th letter o typ. 250 s thermische eigenschaften / thermal properties innerer w?rmewiderstand khlfl?che / cooling surface r thjc thermal resitance, junction to case beidseitig / two-sided, ?=180sin max. 0,0530 c/w beidseitig / two-sided, dc max. 0,0500 c/w anode / anode, ?=180sin max. 0,0880 c/w anode / anode, dc max. 0,0850 c/w kathode / cathode, ?=180sin max. 0,1230 c/w kathode / cathode, dc max. 0,1200 c/w bergangs- w?rmewiderstand khlfl?che / cooling surface r thck thermal resitance, case to heatsink beidseitig / two-sided max. 0,0075 c/w einseitig / single-sided max. 0,0150 c/w h?chstzul?ssige sperrschichttemperatur t vj max 125 c max. junction temperature betriebstemperatur t c op -40...125 c operating temperature lagertemperatur t stg -40...140 c storage temperature mechanische eigenschaften / mechanical properties geh?use, siehe anlage seite 3 case, see appendix page 3 si-element mit druckkontakt si-pellet with pressure contact anpre?kraft f 5 ...10 kn clamping force gewicht g typ. 100 g weight kriechstrecke 17 mm creepage distance feuchteklasse din 40040 c humidity classification schwingfestigkeit f = 50hz 50 m/s2 vibration resistance mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen./ the technical information specifies semiconductors devices but promises no characteristics. it is valid in combination with the belonging technical notes. sz-am / 99-07-26, k.-a.rther a seite/page 2
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n sz-am / 99-07-26, k.-a.rther a zn. nr.: 1 seite/page 3
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n khlung analytische elemente des transienten w?rmewiderstandes z thjc fr dc cooling analytical ementes of transient thermal impedancez thjc for dc pos.n 1 2 3 4 5 6 7 beidseitig r thn [c/w] 0,010500 0,002830 0,016700 0,018800 0,001160 two-sided t n [s] 0,001130 0,025500 0,051100 0,429000 2,490000 anodenseitig r thn [c/w] 0,009400 0,009740 0,018200 0,016100 0,031600 anode-sided t n [s] 0,000984 0,016700 0,204000 0,821000 5,000000 kathodenseitig r thn [c/w] 0,009280 0,014500 0,008680 0,040100 0,047500 cathode-sided t n [s] 0,000939 0,028500 0,156000 1,120000 9,100000 n max analytische funktion / analytical function : z thjc = s r thn ( 1 - exp ( - t / t n )) n=1 sz-am / 99-07-26, k.-a.rther seite/page 4
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n grenzdurchla?kennlinie / limiting 0n-state characteristics i t = f(v t ) t vj = t vj max sz-am / 99-07-26, k.-a.rther z. nr.: 2 seite/page 5 0 500 1.000 1.500 2.000 0,5 1 1,5 2 2,5 v t [v] i t [a]
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n durchla?verlustleistung / on-state power loss p tav = f(i tav ) parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 3 seite/page 6 0 200 400 600 800 0 100 200 300 400 500 600 i tav [a] p tav [w] q = 30 60 90 120 180
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige geh?usetemperatur / maximum allowable case temperature t c = f(i tavm ) beidseitige khlung / two-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.:4 seite/page 7 20 40 60 80 100 120 140 0 100 200 300 400 500 600 i tavm [a] t c [c] q = 30 60 90 120 180
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige khlmitteltemperatur / max. allowable cooling medium temperature t a = f (i tavm ) luftselbstkhlung / natural air-cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 5 seite/page 8 khlk?rper/heatsink. k0.36s 20 40 60 80 100 120 140 0 50 100 150 200 250 i tavm [a] t a [c] q = 30 60 90 120 180
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige khlmitteltemperatur / max. allowable cooling medium temperature t a = f (i tavm ) verst?rkte luftkhlung / forced air-cooling khlk?rper/heatsink. k0.05f, v l = 50 l/s parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 6 seite/page 9 20 40 60 80 100 120 140 0 100 200 300 400 500 i tavm [a] t a [c] q = 30 60 90 120 180
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige geh?usetemperatur / maximum allowable case temperature t c = f(i tavm ) anodenseitige khlung / anode sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 7 seite/page 10 20 40 60 80 100 120 140 0 100 200 300 400 500 600 i tavm [a] t c [c] q = 30 60 90 120 180
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n durchla?verlustleistung / on-state power loss p tav = f(i tav ) parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 8 seite/page 11 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 700 800 i tav [a] p tav [w] dc 180 120 90 60 q = 30
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige geh?usetemperatur / maximum allowable case temperature t c = f(i tavm ) beidseitige khlung / two-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 9 seite/page 12 20 40 60 80 100 120 140 0 100 200 300 400 500 600 700 800 i tavm [a] t c [c] q = 30 60 90 120 180 dc
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige khlmitteltemperatur / max. allowable cooling medium temperature t a = f (i tavm ) luftselbstkhlung / natural air-cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a / 98 z.nr.: 10 seite/page 13 khlk?rper/heatsink. k 0.36 s 20 40 60 80 100 120 140 0 50 100 150 200 250 300 i tavm [a] t a [c] q = 30 60 90 120 180 dc
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige khlmitteltemperatur / max. allowable cooling medium temperature t a = f (i tavm ) verst?rkte luftkhlung / forced air-cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 11 seite/page 14 khlk?rper/heatsink. k0.05f, v l = 50 l/s 20 40 60 80 100 120 140 0 100 200 300 400 500 600 i tavm [a] t a [c] q = 30 60 90 120 180 dc
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul?ssige geh?usetemperatur / maximum allowable case temperature t c = f(i tavm ) anodenseitige khlung / anode sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 12 seite/page 15 20 40 60 80 100 120 140 0 100 200 300 400 500 600 700 800 i tavm [a] t c [c] q = 30 60 90 120 180 dc
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n berstrom / overload on-state current i t(ov) = f(t) beidseitige luftselbstkhlung / two-sided natural cooling k 0.36 s t a = 45c parameter: vorlaststrom / pre-load current i tav(vor) sz-am / 99-07-26, k.-a.rther a z. nr.: 13 seite/page 16 100 1.000 10.000 0,01 0,1 1 10 100 1000 10000 t [s] i t (ov) [a] i tav (vor) = 0 a 40 a 80 a 120 a 140 a 160 a 500 5.000
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n berstrom / overload on-state current i t(ov) = f(t) beidseitige verst?rkte khlung / forced two-sided cooling k0.12f t a = 35c, v l = 50 l/s parameter: vorlaststrom / pre-load current i tav(vor) sz-am / 99-07-26, k.-a.rther a z. nr.: 14 seite/page 17 1.000 10.000 0,01 0,1 1 10 100 1000 t [s] i t (ov) [a] i tav (vor) = 0 a 80 a 160a 240 a 280 a 320 a 4.000 6.000 8.000 2.000
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n h?chstzul. durchla?strom bei ausetzbetrieb / max. allowable on-state current during intermittent operation i tint = f(ed) beidseitig luftselbstkhlung / two-sided natural cooling k 0.36s t a = 45 c parameter: vorlaststrom / pre-load current i tav(vor) , spieldauer / cycle duration sd h?chstzul. durchla?strom bei ausetzbetrieb / max. allowable on-state current during intermittent operation i tint = f(ed) beidseitig verst?rkte khlung / forced two-sided cooling k 0.12f t a = 35 c, v l = 50 l/s parameter: vorlaststrom / pre-load current i tav(vor) , spieldauer / cycle duration sd sz-am / 99-07-26, k.-a.rther a z. nr.: 15 seite/page 17 0 200 400 600 800 1000 1200 1400 1600 0,1 1 10 100 ed [%] i tint [a], i tav(vor) = 0 sd = 0,1 s 0,4 s 1 s 4 s 20 s 1 min 4 min 10 min 40 min 2 h 0 200 400 600 800 1000 1200 1400 1600 0 500 1000 1500 i tint [a] i tav(vor) [a]= 160 120 80 40 0 s d e d i t a v ( v o r ) i t i n t 200 400 600 800 1000 1200 1400 1600 0,1 1 10 100 ed [%] i tint [a], i tav(vor) = 0 sd = 0,1 s 0,4 s 1 s 4 s 20 s 1 min 4 min 10 min 40 min 2 h 200 400 600 800 1000 1200 1400 1600 200 400 600 800 1000 1200 1400 1600 i tint [a] i tav(vor) [a]= 320 240 160 80 0 s d e d i t a v ( v o r ) i t i n t
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n grenzstrom / max. overload on-state current i t(ov)m = f(t), v rm = 0,8 v rrm beidseitige khlung / two-sided cooling khlk?rper / heatsink: k0.36s, k 0.05f belastung aus / surge current occurs: a - leerlauf / no-load conditions b - betrieb mit dauergrenzstrom / during operation at max. average on-state current i tavm sz-am / 99-07-26, k.-a.rther a z. nr.: 16 seite/page 19 0 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 0,01 0,1 1 10 t [s] i t(ov)m [a] a b k 0.012 f, t a = 35 c v l = 50l/s k 0.36 s t a = 45 c
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n steuercharakteristik v g = f (i g ) mit zndbereichen fr v d = 6 v gate characteristic v g = f (i g ) with triggering area for v d = 6 v h?chstzul?ssige spitzensteuerverlustleistung / maximum rated peak gate power disspation p gm = f (t g ) : a - 40 w/10ms b - 80 w/1ms c - 100 w/0,5ms d - 150 w/0,1ms sz-am / 99-07-26, k.-a.rther a z.nr.: 17 seite/page 20
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n zndverzug / gate controlled delay time t gd = f(i gm ) t vj = 25c, di g /dt = i gm /1s a - maximaler verlauf / limiting characteristic b - typischer verlauf / typical characteristic sz-am / 99-07-26, k.-a.rther a z.nr.: 18 seite/page 21 0,1 1 10 100 1000 10 100 1000 10000 i gm [ma] t gd [s] a b
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n sperrverz?gerungsladung / recovered charge q r = f(di/dt) t vj = t vj max, v r = 0,5 v rrm , v rm = 0,8 v rrm parameter: durchla?strom / on-state current i tm sz-am / 99-07-26, k.-a.rther zn. nr.: 19 seite/page 22 100 1000 10000 1 10 100 -di/dt [a/s] q r [as] 20 50 100 200 500 500a 1000 i tm = [a]
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n transienter innerer w?rmewiderstand / transient thermal impedance z (th)jc = f(t) beidseitige khlung /ttwo-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 20 seite/page 23 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,001 0,01 0,1 1 10 t [s] z (th) jc [c/w] 30 60 90 120 180 q =
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n transienter innerer w?rmewiderstand / transient thermal impedance z (th)jc = f(t) anodenseitige khlung / anode-sided sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 21 seite/page 24 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,160 0,180 0,200 0,001 0,01 0,1 1 10 100 t [s] z (th) jc [c/w] 30 60 90 120 180 q =
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n transienter innerer w?rmewiderstand / transient thermal impedance z (th)jc = f(t) kathodenseitige khlung / cathde-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 22 seite/page 25 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,160 0,180 0,200 0,001 0,01 0,1 1 10 100 t [s] z (th) jc [c/w] 30 60 90 120 180 q =
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n transienter innerer w?rmewiderstand / transient thermal impedance z (th)jc = f(t) beidseitige khlung /ttwo-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 23 seite/page 26 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,160 0,001 0,01 0,1 1 10 t [s] z (th) jc [c/w] dc 180 120 90 60 30 q =
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n transienter innerer w?rmewiderstand / transient thermal impedance z (th)jc = f(t) anodenseitige khlung / anode-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 24 seite/page 27 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,160 0,180 0,200 0,001 0,01 0,1 1 10 100 t [s] z (th) jc [c/w] dc 180 120 90 60 30 q =
technische information / technical information netz-thyristor phase control thyristor t 508 n 12 ...18 n transienter innerer w?rmewiderstand / transient thermal impedance z (th)jc = f(t) kathodenseitige khlung / cathode-sided cooling parameter: stromflu?winkel q / current conduction angle q sz-am / 99-07-26, k.-a.rther a z.nr.: 25 seite/page 28 0,000 0,020 0,040 0,060 0,080 0,100 0,120 0,140 0,160 0,180 0,200 0,220 0,001 0,01 0,1 1 10 100 t [s] z (th) jc [c/w] dc 180 120 90 60 30 q =
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