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| 2SA719 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free -0.5 A, -30 V PNP Plastic Encapsulated Transistor FEATURES TO-92 For low-frequency power amplification and driver amplification. G H CLASSIFICATION OF hFE Product-Rank 2SA719-Q Range 85~170 2SA719-R 120~240 2SA719-S 170~340 K A J D B Emitter Collector Base REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating -30 -25 -5 -0.5 625 150, -55~150 Unit V V V A mW C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Min -30 -25 -5 85 40 - Typ 200 - Max -0.1 -0.1 340 -0.6 -1.5 15 Unit V V V A A Test condition IC= -10A, IE=0 IC= -10mA, IB=0 IE= -10A, IC=0 VCB= -20V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -0.15A VCE= -10V, IC= -0.5A IC= -0.3A, IB= -30mA IC= -0.3A, IB= -30mA VCE= -10V, IC= -50mA, f=200MHz VCB= -10V, IE= 0, f=1MHz V V MHz pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 1 of 3 2SA719 Elektronische Bauelemente -0.5 A, -30 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 2 of 3 2SA719 Elektronische Bauelemente -0.5 A, -30 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 3 of 3 |
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