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ON Semiconductort
NPN Silicon Power Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features:
BU323Z
AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS
* Integrated High-Voltage Active Clamp * Tight Clamping Voltage Window (350 V to 450 V) Guaranteed * Clamping Energy Capability 100% Tested in a Live * * *
Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Offered in Plastic SOT-93/TO-218 Type or TO-220 Packages Over the -40C to +125C Temperature Range
360 V CLAMP
CASE 340D-02 SOT-93/TO-218 TYPE
IIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VEBO IC ICM IB IBM PD Value 350 6.0 10 20 Unit Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Emitter Voltage Collector Current -- Continuous -- Peak Base Current -- Continuous -- Peak Total Power Dissipation Derate above 25_C 3.0 6.0 (TC = 25_C) 150 1.0 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +175
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC TL
Max 1.0
Unit
Thermal Resistance, Junction to Case
_C/W _C
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
260
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 10
Publication Order Number: BU323Z/D
III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I III I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I III I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I III I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
(1) Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) CLAMPING ENERGY (see notes) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Cross-over Time
Storage Time
Fall Time
Repetitive Non-Destructive Energy Dissipated at turn-off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 ) (see Figures 2 and 4)
Input Capacitance (VEB = 6.0 V)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc)
Diode Forward Voltage Drop (IF = 10 Adc)
Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc)
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc)
Emitter-Base Leakage Current (VEB = 6.0 Vdc, IC = 0)
Collector-Emitter Cutoff Current (VCE = 200 V, IB = 0)
Collector-Emitter Clamping Voltage (IC = 7.0 A) (TC = -40C to +125C)
(IC = 10 Adc, IB = 0.25 Adc)
(IC = 8.0 Adc, IB = 0.1 Adc)
Characteristic
(IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V VZ = 300 V) V,
(TC = -40C to +125C)
(TC = -40C to +125C)
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(TC = 125C) (TC = 125C)
BU323Z
2 WCLAMP Symbol VCLAMP VCE(sat) VBE(sat) VBE(on) ICEO IEBO Cob hFE Cib VF fT tsi tfi tc Min 200 150 500 350 1.1 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 625 1.7 10 -- 3400 Max 550 200 100 450 2.0 2.5 2.1 2.3 1.6 1.8 1.8 2.1 1.7 2.2 2.5 50 -- 30 -- -- mAdc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc mJ pF pF -- s s ns
BU323Z
IC INOM = 6.5 A Output transistor turns on: IC = 40 mA
MERCURY CONTACTS WETTED RELAY
L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE
High Voltage Circuit turns on: IC = 20 mA Avalanche diode turns on: IC = 100 A VCE VCLAMP NOMINAL = 400 V
RBE = 100 IB CURRENT SOURCE VBEoff IB2 SOURCE
IC MONITOR
0.1 NON INDUCTIVE
250 V Icer Leakage Current
300 V
340 V
Figure 1. IC = f(VCE) Curve Shape
Figure 2. Basic Energy Test Circuit
By design, the BU323Z has a built-in avalanche diode and a special high voltage driving circuit. During an auto-protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in "FBSOA." Because of the built-in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1.
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 , Vgate = 280 V, L = 8.0 mH
10 IC, COLLECTOR CURRENT (AMPS) TC = 25C 10 ms 250 ms 0.1 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 ms
300 s
1
0.01
0.001 10
100 340 V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
Figure 3. Forward Bias Safe Operating Area
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BU323Z
IC ICPEAK IC HIGH
IC LOW VCE
The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a.
(a)
IC ICPEAK
VGATE MIN
IC HIGH
IC LOW VCE
(b)
IC ICPEAK
VGATE MIN
IC HIGH
The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required.
IC LOW VCE
(c)
IC ICPEAK
VGATE MIN
IC HIGH
The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d.
IC LOW VCE
(d)
VGATE MIN
Figure 4. Energy Test Criteria for BU323Z
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BU323Z
10000 TJ = 125C 1000 -40C 100 25C 10000 TYPICAL hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 TYP - 6 TYP + 6 100 VCE = 5 V, TJ = 25C 10000 10 100 10000 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 100000
10 100
VCE = 1.5 V 1000 IC, COLLECTOR CURRENT (MILLIAMPS)
Figure 5. DC Current Gain
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 7A 5A 8A 10 A IC = 3 A TJ = 25C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 25C IC/IB = 150 TJ = 125C
1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Collector Saturation Region
Figure 8. Collector-Emitter Saturation Voltage
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.1 125C IC/IB = 150
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1
VCE = 2 VOLTS
TJ = 25C
TJ = 25C
125C
1 IC, COLLECTOR CURRENT (AMPS)
10
1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 9. Base-Emitter Saturation Voltage
Figure 10. Base-Emitter "ON" Voltages
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BU323Z
PACKAGE DIMENSIONS CASE 340D-02 SOT-93/TO-218 TYPE ISSUE B
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069
U S K L
1 2
4
A
3
D V G
J H
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
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6
BU323Z
Notes
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BU323Z
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PUBLICATION ORDERING INFORMATION
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BU323Z/D

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