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| BYS10-25 thru BYS10-45 Vishay Semiconductors Schottky Barrier Rectifiers DO-214AC (SMA) Cathode Band Reverse Voltage 25 to 45 V Forward Current 1.5 A 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) Mounting Pad Layout 0.177 (4.50) 0.157 (3.99) 0.066 MIN. (1.68 MIN.) 0.012 (0.305) 0.006 (0.152) 0.074 MAX. (1.88 MAX.) Dimensions in inches and (millimeters) 0.090 (2.29) 0.078 (1.98) 0.060 MIN. (1.52 MIN.) 0.130 (3.30) 0.106 (2.70) 0.008 (0.2) 0 (0) 0.208 (5.28) 0.194 (4.93) 0.060 (1.52) 0.030 (0.76) 0.208 (5.28) REF Features * * * * * * * * Low power loss, high efficiency Low profile surface mount package Built-in strain relief Very low switching losses Low reverse current High surge capability Guardring for overvoltage protection Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Mechanical Data Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Polarity: Color band denotes cathode end Weight: 0.002oz., 0.064g Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current single half sine-wave superimposed on rated load at 8.3ms at 10ms VRRM IF(AV) IFSM RJL RJA TJ, TSTG (TA = 25C unless otherwise noted) Symbol BYS10-25 BYS 025 25 BYS10-35 BYS 035 35 1.5 40 30 25 150 (1) 125 (2) 100 (3) -65 to +150 BYS10-45 BYS 045 45 Unit V A A C/W C/W C Maximum Thermal Resistance - Junction Lead Maximum Thermal Resistance - Junction Ambient Junction and storage temperature range Electrical Characteristics Maximum DC reverse current at VRRM(4) Notes: (1) (2) (3) (4) Maximum instantaneous forward voltage at 1A (4) TJ = 25C TJ = 100C VF IR 500 500 10 mV A mA Mounted on epoxy-glass hard tissue Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 m Cu Pulse test: 300s pulse width, 1% duty cycle Document Number 86013 08-Jun-04 www.vishay.com 1 BYS10-25 thru BYS10-45 Vishay Semiconductors Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature PR -- Max. Reverse Power Dissipation (W) Fig. 4 - Max. Average Forward Current vs. Ambient Temperature IFAV -- Average Forward Current (A) 7 BYS10-45 6 5 4 2.0 1.6 VR=0V, Half Sinewave BYS10-35 RthJA=25K/W RthJA=25K/W 1.2 0.8 0.4 0 100K/W 125K/W 150K/W 3 2 1 BYS10-25 RthJA=100K/W 0 0 40 80 120 160 200 Tj -- JunctionTemperature (C) 0 40 80 120 160 200 Tamb -- Ambient Temperature (C) Fig. 2 - Max. Reverse Current vs. Junction Temperature 1000 Fig. 5 - Max. Forward Current vs. Forward Voltage 100 IR -- Reverse Current (mA) 100 IF -- Forward Current (A) Tj=150C 10 10 1 1 VR=VRRM Tj=25C 0.1 0.1 0 40 80 120 160 Tj -- JunctionTemperature (C) 200 0.01 0 0.4 0.8 1.2 1.6 VF -- Forward Voltage (V) 2.0 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 350 IFAV -- Average Forward Current (A) Fig. 6 - Diode Capacitance vs. Reverse Voltage 300 250 200 150 100 50 0 f=1MHz 2.0 1.6 1.2 0.8 BYS10-35 BYS10-25 CD -- Diode Capacitance (pF) VR=VRRM, Half Sinewave, RthJA=25K/W 0.4 BYS10-45 0 0 40 80 120 160 Tamb -- Ambient Temperature (C) 200 0.1 1.0 10.0 100.0 VR -- Reverse Voltage (V) Document Number 86013 08-Jun-04 www.vishay.com 2 |
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