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TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix N-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY Part Number TN2404K 240 TN2404KL/BS107KL VDS Min (V) rDS(on) (W) 4 @ VGS = 10 V 4 @ VGS = 10 V VGS(th) (V) 0.8 to 2.0 0.8 to 2.0 ID (A) 0.2 0.3 FEATURES D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" TO-226AA (TO-92) S 3 D G 2 1 APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-92-18RM (TO-18 Lead Form) Device Marking Front View "S" TN 2404KL xxyy "S" = Siliconix Logo xxyy = Date Code D 1 Device Marking Front View "S" BS 107KL xxyy "S" = Siliconix Logo xxyy = Date Code TO-236 (SOT-23) G 1 S 2 G 2 D Top View TN2404K Marking Code: K1ywl K1 = Part Number Code for TN2404K y = Year Code w = Week Code l = Lot Traceability 3 S 3 Top View TN2404KL Top View BS107KL ORDERING INFORMATION TN2404K-T1 TN2404KL-TA BS107KL-TA TN2404KL-TR1 BS107KL-TR1 Spool Option With Tape and Reel Folding Option p gp ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR4 board. Document Number: 72225 S-31621--Rev. A , 11-Aug-03 www.vishay.com TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS TN2404K TN2404KL/BS107KL 240 "20 Unit V 0.2 ID IDM PD RthJA TJ, Tstg 0.16 0.8 0.36 0.23 350b -55 to 150 0.3 0.25 1.4 0.8 0.51 156 W _C/W _C A 1 TN2404K/TN2404KL/BS107KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 100 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 55_C VDS = 10 V, VGS =10 V ID( ) D(on) VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 0.3 A Drain-Source On-Resistanceb rDS(on) () VGS = 4.5 V, ID = 0.2 A VGS = 2.5 V, ID = 0.1 A Forward Transconductanceb Diode Forward Voltage gfs VSD VDS = 10 V, ID = 0.3 A IS = 0.3 A, VGS = 0 V 0.8 0.5 2.2 2.3 2.4 1.6 0.8 1.2 4 4 6 S V W A 240 0.8 257 1.65 2.0 "100 1 10 mA V nA Symbol Test Conditions Min Typa Max Unit On-State On State Drain Currentb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Turn On Time Qg Qgs Qgd td(on) tr td(off) tr Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. VDD = 60 V, RL = 200 W ID ] 0.3 A, VGEN = 10 V, RG = 25 W VDS = 192 V, VGS = 10 V, ID = 0.5 A 4.87 0.56 1.53 5 12 35 16 10 20 nS 60 25 8 nC turn-Off Time www.vishay.com 2 Document Number: 72225 S-31621--Rev. A , 11-Aug-03 TN2404K/TN2404KL/BS107KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.8 VGS = 10 thru 3 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 0 1 2 3 4 5 6 1.4 TC = -55_C 25_C Vishay Siliconix Transfer Characteristics 1.2 125_C 2.5 V 0.9 0.6 0.3 2V 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 5 r DS(on) - On-Resistance ( W ) 300 Capacitance C - Capacitance (pF) 4 250 200 3 Ciss VGS = 4.5 V VGS = 10 V 150 2 100 1 50 Crss Coss 0 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 192 V ID = 0.5 A 8 2.2 2.0 r DS(on) - On-Resistance ( W) (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.3 A 6 VGS = 4.5 V ID = 0.2 A 4 2 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72225 S-31621--Rev. A , 11-Aug-03 www.vishay.com 3 TN2404K/TN2404KL/BS107KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 8 7 I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) 6 ID = 50 mA 5 4 3 2 ID = 10 mA 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 100 mA On-Resistance vs. Gate-to-Source Voltage 0.1 TJ = -55_C TJ = 25_C 0.01 TJ = 150_C 0.001 0.0 Threshold Voltage 0.3 0.2 0.1 V GS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -50 ID = 250 mA -25 0 25 50 75 100 125 150 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =350_C/W Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72225 S-31621--Rev. A , 11-Aug-03 TN2404K/TN2404KL/BS107KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 0.1 0.1 0.05 Notes: PDM t1 0.02 0.01 Single Pulse 0.01 0.1 1 10 100 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) Document Number: 72225 S-31621--Rev. A , 11-Aug-03 www.vishay.com 5 |
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