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ASMCC0096 APPLICATION SPECIFIC MULTI CHIP CIRCUIT ASMCCTM Features * * * Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free Product SOT-363 A Dim A BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 B C D Mechanical Data * * * * * * * * Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Marking: A96 Date Code & Marking Information: See Page 2 Weight: 0.008 grams (approx.) G H K 0.65 Nominal F H M J K L M a J D F L All Dimensions in mm K1 NC E1 UDZ5V6B MMBT3904 A1 B1 C1 Maximum Ratings, Total Device @ TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 200 625 -55 to +150 Unit mW C/W C Maximum Ratings, NPN Transistor Element Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 60 60 6.0 200 Unit V V V mA Maximum Ratings, Zener Element Characteristic Forward Voltage Notes: @ TA = 25C unless otherwise specified Symbol Value 0.9 Unit V @ IF = 10mA VF 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30379 Rev. 3 - 2 1 of 5 www.diodes.com ASMCC0096 a Diodes Incorporated Electrical Characteristics, NPN Transistor Element Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 3/4 3/4 Symbol Min @ TA = 25C unless otherwise specified Max 3/4 3/4 3/4 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 Unit Test Condition V V V nA nA IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V DC Current Gain hFE 3/4 IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Cobo Cibo hie hre hfe hoe fT NF 4.0 8.0 10 8.0 400 40 3/4 5.0 pF pF kW x 10-4 3/4 mS MHz dB VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz t@ TA = 25C unless otherwise specified VCC = 3.0V, IC = 10mA, 3/4 35 ns d VBE(off) = - 0.5V, IB1 = 1.0mA tr 3/4 35 ns ts tf 3/4 3/4 200 50 ns ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Electrical Characteristics, Zener Element @ TA = 25C unless otherwise specified Zener Voltage Range (Note 2) Type Number Nom (V) UDZ5V6B Notes: 5.6 VZ @ IZT Min (V) 5.49 Max (V) 5.73 IZT mA 5 60 Maximum Zener Impedance ZZT @ IZT W 200 ZZK @ IZK = 0.5mA Maximum Reverse Leakage Current IR mA 1.0 @VR V 2.5 2. Short duration test pulse used to minimize self-heating effect. DS30379 Rev. 3 - 2 2 of 5 www.diodes.com ASMCC0096 Ordering Information Device ASMCC0096-7 ASMCC0096-13 Notes: (Note 3) Packaging SOT-363 SOT-363 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A96 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 A96 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30379 Rev. 3 - 2 3 of 5 www.diodes.com ASMCC0096 MMBT3904 Section 200 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 15 f = 1MHz PD, POWER DISSIPATION (mW) 150 10 100 5 Cibo 50 Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (Transistor Element) 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (Transistor Element) 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (Transistor Element) 10 IC IB = 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (Transistor Element) DS30379 Rev. 3 - 2 4 of 5 www.diodes.com ASMCC0096 UDZ5V6B Section IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 6 Typical Forward Characteristics DS30379 Rev. 3 - 2 5 of 5 www.diodes.com ASMCC0096 |
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