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| SFH610A/615A/617A 5.3 kV TRIOS Optocoupler High Reliability FEATURES * High Current Transfer Ratios at 10 mA: 40-320% at 1.0 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Withstand Test Voltage, 5300 VRMS * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100" (2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * V VDE 0884 Available with Option 1 * SMD Option - See SFH6106/16/56 Data Sheet DE Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) SFH610A 4 Emitter 3 Collector Anode 1 Cathode 2 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 1.00 (2.54) .110 (2.79) .130 (3.30) 3-9 .008 (.20) .012 (.30) .300 (7.62) typ. .230 (5.84) .250 (6.35) SFH615A/617A Anode 1 4 Collector 3 Emitter DESCRIPTION The SFH61XA features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Cathode 2 Maximum Ratings Emitter Reverse Voltage............................................................................6 V DC Forward Current.................................................................60 mA Surge Forward Current (tP10 s).............................................2.5 A Total Power Dissipation.........................................................100 mW Detector Collector-Emitter Voltage ............................................................70 V Emitter-Collector Voltage ..............................................................7 V Collector Current .....................................................................50 mA Collector Current (tP1 ms)....................................................100 mA Total Power Dissipation.........................................................150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ................. 5300 VRMS Creepage................................................................................ 7 mm Clearance ............................................................................... 7 mm Insulation Thickness between Emitter and Detector ........... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 ........................................ 175 Isolation Resistance VIO=500 V, TA=25C.......................................................... 1012 VIO=500 V, TA=100C........................................................ 1011 Storage Temperature Range ......................................-55 to +150C Ambient Temperature Range......................................-55 to +100C Junction Temperature .............................................................. 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm).................................... 260C Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 1 November 23, 1999-15 Characteristics (TA=25C) Description Emitter (IR GaAs) Forward Voltage Reverse Current Capacitance Thermal Resistance Detector (Si Phototransistor) Capacitance Thermal Resistance Package Collector-Emitter Saturation Voltage Coupling Capacitance VCESAT CC 0.25 (0.4) 0.4 V pF IF=10 mA, IC=2.5 mA CCE RthJA 5.2 500 pF K/W VCE=5 V, f=1 MHz VF IR C0 RthJA 1.25 (1.65) 0.01 (10) 13 750 V A Symbol Unit Condition IF=60 mA VR=6 V VR=0 V, f=1 MHz pF K/W Current Transfer Ratio (IC/IF at VCE=5 V) and Collector-Emitter Leakage Current by Dash Number Description IC/ IF (IF=10 mA) IC/ IF (IF=1 mA) Collector-Emitter Leakage Current, I CEO VCE=10 V -1 40-80 30 (>13) 2 (50) -2 63-125 45 (>22) 2 (50) -3 100-200 70 (>34) 5 (100) -4 160-320 90 (>56) 5 (100) nA % Switching Times (Typical) Linear Operation (without saturation) IF=10 mA, VCC=5 V, TA=25C Load Resistance RL tON tR tOFF tF FCO 75 3.0 2.0 2.3 2.0 250 kHz s IF RL=75 IC VCC=5 V Turn-on Time Rise Time Turn-off Time 47 Fall Time Cut-off Frequency Switching Operation (with saturation) Dash No. VCC=5 V IF 1 K Parameter Sym. -1 IF=20 mA -2 and -3 IF=10 mA -4 IF=5 mA Unit Turn-on Time 47 tON tR tOFF tF 3.0 2.0 18 11 4.2 3.0 23 14 6.0 4.6 25 15 s Rise Time Turn-off Time Fall Time Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 2 SFH610/11/15/17A November 23, 1999-15 Figure 1. Current transfer ratio (typ.) vs. temperature IF=10 mA, VCE=5 V Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25C, f=1 MHz 20 pF 15 Figure 7. Permissible diode forward current vs. ambient temp. C 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage TA=25C Figure 5. Permissible pulse handling capability. Forward current vs. pulse width Pulse cycle D=parameter, TA=25C Figure 3. Diode forward voltage (typ.) vs. forward current Figure 6. Permissible power dissipation vs. ambient temperature Infineon Technologies, Corp. * Optoelectronics Division * Cupertino, CA (formerly Siemens Microelectronics, Inc.) www.infineon.com/opto * 1-800-777-4363 3 SFH610/11/15/17A November 23, 1999-15 |
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