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| APTGF20X60RTP2 APTGF20X60BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module Application * AC Motor control VCES = 600V IC = 20A @ Tc = 80C Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring * * * APTGF20X60RTP2: Without Brake (Pin 7 & 14 not connected) 20 19 18 17 16 15 14 13 12 11 10 Benefits * * * * * * * * Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 21 22 9 8 23 24 7 1 2 3 4 5 6 All ratings @ Tj = 25C unless otherwise specified IFSM Surge Forward Current tp = 10ms Tj = 150C 230 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-4 APTGF20X60BTP2 - Rev 0 TC = 80C Tj = 25C A July, 2003 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings Symbol VRRM ID Parameter Repetitive Peak Reverse Voltage DC Forward Current Max ratings 1600 20 300 Unit V APTGF20X60RTP2 APTGF20X60BTP2 IGBT & Diode Brake (only for APTGF20X60BTP2) Absolute maximum ratings Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C Max ratings 600 20 10 25 20 80 10 Unit V A V W A Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation DC Forward Current Absolute maximum ratings IGBT & Diode Inverter Symbol VCES IC ICM VGE PD SCSOA IF IFSM Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Short circuit Safe Operating Area DC Forward Current Surge Forward Current TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C TC = 80C TC = 80C tp = 1ms Max ratings 600 35 20 70 20 125 80A @ 360V 20 40 Unit V A V W A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic IR Reverse Current VF RthJC Forward Voltage Junction to Case Test Conditions VR = 1600V Tj = 150C Tj = 25C IF = 30A Tj = 150C IF = 20A Min Typ 2 1.3 1 Max 1.5 1.05 1 Unit mA V C/W IGBT Brake & Diode (only for APTGF20X60BTP2) Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Cies VF RthJC Test Conditions Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Forward Voltage Junction to Case VGE = 0V VCE = 600V Tj = 25C Tj = 125C Min Typ 0.5 0.8 1.95 2.2 5.5 800 1.25 1.2 Max 500 2.35 6.5 300 1.75 1.5 1.5 Unit A mA V V nA July, 2003 2-4 APTGF20X60BTP2 - Rev 0 Tj = 25C VGE = 15V IC = 10A Tj = 125C VGE = VCE , IC = 0.35 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25C VGE = 0V IF = 20A Tj = 125C IGBT Diode 4.5 pF V C/W APT website - http://www.advancedpower.com APTGF20X60RTP2 APTGF20X60BTP2 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 500A VGE = 0V Tj = 25C VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 20A Tj = 125C VGE = VCE , IC = 0.5 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 20A RG = 47 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 20A RG = 47 VGE = 0V IF = 20A IF = 20A VR = 300V di/dt=700A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C IGBT Diode Min 600 Typ 0.7 1.0 1.95 2.2 5.5 1100 50 50 250 30 50 50 270 40 0.7 1.25 1.2 1.7 2.7 Max 500 2.45 6.5 300 Unit V A mA V V nA pF 4.5 ns ns mJ 1.7 V C 1 1.5 C/W Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K Min Typ 5 3375 Max Unit k K RT = R25 exp B25 / 50 11 - T25 T T: Thermistor temperature RT: Thermistor value at T M5 N.m g APT website - http://www.advancedpower.com 3-4 APTGF20X60BTP2 - Rev 0 Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight 3. Thermal and package characteristics Min 2500 -40 -40 -40 Typ Max 150 125 125 3.3 185 Unit July, 2003 V C APTGF20X60RTP2 APTGF20X60BTP2 4. Package outline PIN 1 PIN 24 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 4-4 APTGF20X60BTP2 - Rev 0 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : July, 2003 |
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