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| VISHAY 1N5417/ 1N5418 Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features * * * * * * Glass passivated junction Hermetically sealed package Soft recovery characteristics Low reverse current Low forward voltage drop High pulse current capability Applications Fast rectification diode 949588 Mechanical Data Case: Sintered solid glass body, SOD 64 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 860 mg (max. 1000 mg) Parts Table Part 1N5417 1N5418 Type differentiation VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A SOD64 SOD64 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Non repetitive reverse avalanche energy 10 ms single half sine-wave I(BR)R = 1 A Sub type 1N5417 1N5418 Symbol VR = VRRM VR = VRRM IF(AV) IFSM ER Value 200 400 3.0 100 20 Unit V V A A mJ Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Operating junction and storage temperature range Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA TJ, TSTG Value 25 70 - 55 to + 175 Unit K/W K/W C Document Number 86097 Rev. 2, 07-Jan-03 www.vishay.com 1 1N5417/ 1N5418 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage Reverse current Maximum reverse recovery time IF = 3 A IF = 9 A VR = VRRM VR = VRRM, Tj = 100 C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Test condition Sub type Symbol VF VF IR IR trr 75 Min Typ. VISHAY Max 1.10 1.50 1.0 20 100 Unit V V A A ns Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 40 3.5 Forward Current ( A ) 30 3.0 2.5 2.0 1.5 1.0 0.5 0.0 RthJA=70K/W PCB: d=25mm VR=VRRM half sineRthJA=25K/W wave l=10mm 20 l 10 l 0 0 5 10 15 TL=constant 20 25 30 l - Lead Length ( mm ) I - FAV Average 0 16388 20 40 60 80 100 120 140 160 180 94 9466 Tamb - Ambient Temperature ( C ) Figure 1. Max. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 100.000 IR - Reverse Current ( mA ) 1000 VR = VRRM I F - Forward Current ( A) 10.000 Tj=175C Tj=25C 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 100 10 1 25 16389 50 75 100 125 150 175 16387 VF - Forward Voltage ( V ) Tj - Junction Temperature ( C ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86097 Rev. 2, 07-Jan-03 VISHAY 1N5417/ 1N5418 Vishay Semiconductors 180 PR - Reverse Power Dissipation ( mW ) CD - Diode Capacitance ( pF ) 120 VR = VRRM 100 80 60 40 20 0 25 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 16391 160 140 120 100 80 60 40 20 0 PR-Limit @80%VR f=1MHz PR-Limit @100%VR 0.1 16390 1.0 10.0 VR - Reverse Voltage ( V ) 100.0 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) Figure 6. Diode Capacitance vs. Reverse Voltage 1000 VRRM=600V RthJA=70K/W 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 0.02 1 10-4 tp/T=0.01 10-3 10-2 10-1 100 101 102 100 101 IFRM - Repetitive Peak Forward Current ( A ) 102 100C 45C 70C Tamb=25C 94 9562 tp - Pulse Length ( s ) Figure 7. Thermal Response Package Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0g Cathode Identification 4.3 max. technical drawings according to DIN specifications 1.35 max. 26 min. 4.2 max. 26 min. 94 9587 Document Number 86097 Rev. 2, 07-Jan-03 www.vishay.com 3 1N5417/ 1N5418 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86097 Rev. 2, 07-Jan-03 |
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